TWI336085B - Composition of polymer thick film resistor and manufacturing method thereof - Google Patents

Composition of polymer thick film resistor and manufacturing method thereof Download PDF

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TWI336085B
TWI336085B TW95149733A TW95149733A TWI336085B TW I336085 B TWI336085 B TW I336085B TW 95149733 A TW95149733 A TW 95149733A TW 95149733 A TW95149733 A TW 95149733A TW I336085 B TWI336085 B TW I336085B
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Taiwan
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thick film
epoxy resin
film resistor
polymer
conductive powder
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TW95149733A
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Chinese (zh)
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TW200828344A (en
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Man Chun Yu
Shur Fen Liu
meng hua Chen
Jinn Shing King
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Ind Tech Res Inst
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丄336085 - _ , t ---- 中抑月Θ日修(更)正替換頁 九、發明說明: 【發明所屬之技椒領域】 ‘ 本發明係關於一種電阻組成及其製作方法,特別是關於 . 一種高分子厚膜電阻組成及其製作方法。 【先前技術】 隨著通訊電子產品高功能化的需求,以及訊號傳輸的高 速高頻化,使得被動元件與主動元件需求大幅增加。為7 提高被動元件效能,減少被動元件數量,降低電路板面 _ 積’利用小型化技術的優點,係將電容、電阻及電感等獨 立式被動元件逐漸變成内埋式被動元件,崁入電路板中, 以提高裝置密度並縮小基板面積。 訊號傳輸的高速高頻化以及傳輸距離的縮短,相對的也 產生一些亟待改善的問題,如快速發展的高密度互連技術 (High Density Interconnection ; HDI ),當元件間密度提 鬲,兀件與元件間之寄生效應曰亦明顯,特別在高頻傳輸 籲 之應用上,更易造成雜訊與訊號延遲、電磁干擾 (Electromagnetic lnterference ; EMI)等問題;若改使用埋 入式電容電阻,將可降低或減少寄生效應,大幅提升產品 • 在高頻高速下作用之表現》同時也減少銲錫接合(Soldei> • Joint)穿孔(Through Hole)、及微孔(Micrvia)數目,並提 升產品之良率。 内埋式電阻的優點在於能縮小基板面積、降低成本、及 有效提升兀件功能。使用内埋式電阻時,所產生的串聯電 感退比獨立式電阻來的小。而在上升時間(Rise 很短 -5- 1336085 * 1 ' ...................... 妁%月/ί日修(更)正替換頁 的情況下,使用獨立式電阻所產生的感應阻抗隨之提升。 使用内埋式電阻,由於傳輸距離短,幾乎可以忽略此感應 - 阻抗。但當傳輸頻率超過ΙΟΟΜίίζ以上時,電阻所需的數 . 量遽增。為降低組裝成本,提高效能,減少使用面積並提 向可靠度’更是需要以内埋式電阻取代表面黏著式(smt) 電阻。其典型性之應用有:數位電阻產品之開口接收器、 LED電流控制、線路终結等等。内埋式電阻在產品上可分 成兩大類,一為薄膜電阻,一為厚膜電阻,前者可使用電 解鍍著法(Electroplate)、濺鍍法(Sputter)或化學汽相沉積 (CVD)等方法,後者則是使用傳統網印法為主。 常見的厚膜電阻在應用上,依基材的選擇與後續的熱反 應,可分為高溫燒結型及低溫烘烤型兩種。高溫燒結型係 指厚膜經500〜90(TC燒結而成的,適合整合於陶兗基板 中,而另一適合用於PCB内埋技術的厚膜電阻則是屬於低 溫烘烤型’再利用網印製程後以12〇〜2〇η:的熱風供烤或 • 使用UV照射,除使溶劑揮發之外,塗料中的熱固型樹脂 產生交聯硬化形成所要的圖形,即所謂的高分子厚膜電阻 (Polymer Thick Film Resistor),簡稱PTF電阻。pTF電阻主 • 要以向分子樹脂為基礎,填充導電性物質,其特色在於可 使用一般的厚膜印刷,筆直地將圖形印刷在介電層或是已 蝕刻好的銅線路上,且烘烤溫度符合一般的pcB製程體 積小、重量輕且價格便宜,並有較大的片電阻 Resistance)範圍,可從15Ω〜1ΜΩ ;但缺點是變異性 (T〇lerance)較大,,約10〜5〇%不等,為改善此缺點並擴大其 • 6 - 1336085 . · 吖年r月A曰修(更)正替換頁 應用性,提高電阻值的範圍與降低誤差變異性(< 5 %)是 重點所在。.丄336085 - _ , t ---- Zhongyin Yuexiu repair (more) replacement page IX, invention description: [Technology field of the invention] The invention relates to a resistor composition and a manufacturing method thereof, in particular About. A polymer thick film resistor composition and a manufacturing method thereof. [Prior Art] With the demand for high functionality of communication electronic products and the high frequency of signal transmission, the demand for passive components and active components has increased significantly. To improve the performance of passive components, reduce the number of passive components, and reduce the advantages of the board surface _ product's use of miniaturization technology, the passive components such as capacitors, resistors and inductors are gradually become embedded passive components, breaking into the circuit board. Medium to increase device density and reduce substrate area. The high-speed high-frequency transmission of signal transmission and the shortening of the transmission distance also have some problems to be improved, such as the rapid development of High Density Interconnection (HDI), when the density between components is improved, and the components are The parasitic effect between components is also obvious. Especially in the application of high-frequency transmission, it is more likely to cause problems such as noise and signal delay, electromagnetic interference (EMI); if you use buried capacitors, it will be reduced. Or reduce parasitic effects and significantly improve the performance of the product at high speeds and high speeds. It also reduces the number of solder joints (Soldei> Joint), and the number of micro-vias (Micrvia), and improves the yield of the product. The advantages of the buried resistor are that it can reduce the substrate area, reduce the cost, and effectively improve the function of the device. When a buried resistor is used, the resulting series inductance is smaller than that of the freestanding resistor. And in the rise time (Rise is very short -5 - 1336085 * 1 ' ...................... 妁% month / ί日修 (more) is replacing page In the case of using a separate resistor, the induced impedance is increased. With the built-in resistor, the inductance-impedance can be almost ignored due to the short transmission distance. However, when the transmission frequency exceeds ΙΟΟΜίίζ, the number of resistors is required. In order to reduce the assembly cost, improve the efficiency, reduce the use area and improve the reliability, it is necessary to replace the surface-adhesive (smt) resistor with a built-in resistor. The typical applications are: the opening of the digital resistance product. Receiver, LED current control, line termination, etc. Built-in resistors can be divided into two categories on the product, one is a thin film resistor and the other is a thick film resistor. The former can be electroplated (Electroplate) or sputtered ( Sputter) or chemical vapor deposition (CVD), the latter is based on traditional screen printing. Common thick film resistors in the application, depending on the choice of substrate and subsequent thermal reaction, can be divided into high temperature sintering And low temperature baking type. High temperature sintering type It refers to thick film after 500~90 (TC sintered, suitable for integration in ceramic substrate, and another thick film resistor suitable for PCB embedded technology is low temperature baking type] after recycling screen printing process Baked with hot air of 12〇~2〇η: or • Using UV irradiation, in addition to volatilizing the solvent, the thermosetting resin in the coating produces a pattern of cross-linking hardening, the so-called polymer thick film resistor ( Polymer Thick Film Resistor), referred to as PTF resistor. pTF resistor main • It is based on molecular resin, filled with conductive material, which is characterized by the use of general thick film printing, straight printing of the graphic on the dielectric layer or The etched copper line, and the baking temperature is in line with the general pcB process, small in size, light in weight and cheap, and has a large sheet resistance (Resistance) range, which can be from 15 Ω to 1 Μ Ω; but the disadvantage is variability (T〇 Lerance) is larger, about 10~5〇%, in order to improve this shortcoming and expand it • 6 - 1336085 . · 吖年r月 A曰修(more) is replacing page applicability, increasing the range of resistance values with Reduce error variability (< 5 %) is heavy Where ..

埋入式被動元件技術的開發已有多年之時間,在專利 上,大部分的揭露者多以電阻製程方面及關於低溫共燒多 層陶瓷(LTCC)的專利,材料配方僅為部分,電阻材料配方 都只是簡單描述為高分子樹脂(如環氧樹脂)與導電粉體 (如碳黑)的混成物,殊不知其中仍有相當多重要配方技術 需釐清,實非習知之高分子樹脂(如環氧樹脂)與導電粉體 的混合可任意達成。The development of embedded passive component technology has been for many years. In the patent, most of the exposers mostly use the patents on resistance process and low temperature co-fired multilayer ceramics (LTCC). The material formulation is only part of the resistance material formula. They are simply described as a mixture of a polymer resin (such as an epoxy resin) and a conductive powder (such as carbon black). It is not known that there are still quite a few important formulation techniques to be clarified, and it is not a conventional polymer resin (such as epoxy). The mixing of the resin and the conductive powder can be arbitrarily achieved.

以目前有關PTF材料專利而言,自1984年起RCA Corp. 便有PTF電阻配方的開發(美國專利US 4,479,890),不過當 時並未揭露關於内埋電阻之應用。另,Advanced Products Inc.從1991開始陸續申請有關高分子厚膜電阻材料配方之 專利(美國專利US 5,049,313、US 5,200,264),其提出以 苯氧基(phenoxy)和團聯聚異氰酸鹽樹脂(blocked polyisocyanate resin)系統為其主的樹脂,與導電粉體以適 當比例混合,並以網版印刷(screen-printing)方法,在低溫 且短時間即可固化成型,其PTF除具有材料儲存性佳、撓 曲性佳、抗溶劑性佳及良好接著性,在高溫短時間放置下 更是具有良好的穩定性,其主要是針對材料信賴性進行研 究,並未針對阻值及尺寸穩定性方面加以討論。而在過去 解決厚膜電阻尺寸穩定性問題之方法,不外乎一是改變方 法,另一是改變材料配方,經由Hui-min Huang、Chia-Tin Chung等人於2000年提出之有關材料配方之專利(US 1336085With regard to current PTF material patents, RCA Corp. has developed PTF resistor formulations since 1984 (US Patent 4,479,890), but did not disclose the application of buried resistors. In addition, Advanced Products Inc. has been applying for a patent for a polymer thick film resistor material formulation since 1991 (U.S. Patent No. 5,049,313, US Pat. No. 5,200,264), which is incorporated herein by reference. Blocked polyisocyanate resin) The system is the main resin, mixed with the conductive powder in an appropriate ratio, and screen-printing method, can be cured at low temperature and in a short time, and its PTF has good material storage. Good flexibility, good solvent resistance and good adhesion. It has good stability under high temperature and short time. It is mainly for material reliability research, and it is not for resistance and dimensional stability. discuss. In the past, the method to solve the problem of dimensional stability of thick film resistors was nothing more than a change of method, and the other was to change the material formulation, which was proposed by Hui-min Huang, Chia-Tin Chung et al. Patent (US 1336085)

利年,月Θ日修(更)正替換買I 1,11 ' .一-K 一 η --- -- --- 一 J 6’03 0,553),就是屬於後者, .曼者其強調以環狀脂肪族結構之 衣氧為主體,並為益溶齋丨糸姑 •巧一劑系統’經由網印成型後,需先使 .^及:將該電阻之外部硬化定型,再由加熱方式進行 .^及㈣㈣結構,“得収寸穩定之厚膜電阻,作 因其增加過程繁複之步驟,會造成成本的提高。另外長興 化工也在細5年提出電阻材料之專利(CN1 567485),立亦 強調為無溶劑系統,完成之厚膜電阻具有良好尺寸穩定性 及良好流變特性,但阻值穩定性仍未绩完善。 • 【發明内容】 本發明係揭露—具良好之阻值穩定性之預反應型高分 子/奈米粉體之混成材料’其令以高分子環氧樹脂為基礎 ^方、由添加奈米導體及進行預反應過程,改善阻值不 穩定之狀況,並兼顧PCB製程可行性及树料特性。 本發明之高分子厚膜t阻材料具有高麵_溫度、較 小的誤差變異性’以及優良之膜厚穩定性,可應用於埋入 • 4電阻材料之應用。所使用之原料包括⑷-環氧樹脂系 統’其包含-尚官能基之環氧樹脂,其官能基大於等於4; ㈦-導電粉體(例如碳黑),含至少一種以上粒徑分佈,且 • 其中包含-種奈米粉體;以及⑷高分子分散劑。 上述之高分子厚獏電阻組成可由下列步驟製作。首先, 混合環氧樹脂系統及至少一導電粉體,其中該環氧樹脂系 統包含一高官能基之環氧樹脂,其官能基大於等於4,且將 環氧樹脂系統及導電粉體於1〇〇_14(rc之溫度加熱3〇分鐘 至H、時以進行預反應。之後加入硬化劑及催化劑後降溫, 丄 -----—-__ 年y月K、f日修(更)正替換頁 並加入高分子分散劑,經 —·— 就製程而t’本發” 料阻浆料。 材料配方技術,即預加孰反 :却相當重要的 應的方式,強調所製出之厚膜In the year of Li, the moon is repaired (more) is replacing I 1,11 '. One-K-η --- -- --- one J 6'03 0,553), which belongs to the latter, the man emphasizes The clothing of oxygen in the ring-shaped aliphatic structure is the main body, and after the system is formed by screen printing, it is necessary to first make the ^^ and: externally harden the external resistance of the resistor, and then heat it. Carry out the structure of .^ and (4) (4), “The thick film resistors that have been stabilized in size, as the steps of increasing the complexity of the process will increase the cost. In addition, Changxing Chemical also proposed the patent of resistive materials (CN1 567485) in 5 years. Li also emphasizes that it is a solvent-free system, and the completed thick film resistor has good dimensional stability and good rheological properties, but the resistance stability is still not perfect. • SUMMARY OF THE INVENTION The present invention is disclosed as having a good resistance value stability. The premixed polymer/nano powder blending material is based on the polymer epoxy resin, and the nano conductor is added and the pre-reaction process is carried out to improve the instability of the resistance value and take into account the PCB. Process feasibility and tree material characteristics. The polymer thick film t resistance of the present invention The material has high surface temperature, small error variability, and excellent film thickness stability, which can be applied to the application of buried 4 resistance materials. The materials used include (4)-epoxy resin system. a functional group epoxy resin having a functional group of 4 or more; (7) a conductive powder (for example, carbon black) having at least one particle size distribution, and • comprising a nano-powder powder; and (4) a polymer dispersant. The above polymer thick 貘 resistance composition can be produced by the following steps. First, a mixed epoxy resin system and at least one conductive powder, wherein the epoxy resin system comprises a high-functional epoxy resin having a functional group of 4 or more. And the epoxy resin system and the conductive powder are heated at a temperature of 1 〇〇 14 (rc for 3 Torr to H, for pre-reaction. After adding the hardener and the catalyst, the temperature is lowered, 丄------- __ Year y, K, f, repair (more) is replacing the page and adding polymer dispersant, after -·- on the process and t' the hair" material resistance slurry. Material formulation technology, that is, pre-adding 孰: a very important way to emphasize the Membrane

=材料具有極佳之電性穩定性,更符合PCB製程加工相 用之手段包括⑴選擇適當之環氧樹脂組成,來 =平料燃性與接著性;⑺環氧樹脂中填充奈米型及 只i回導電性粉體以調配其電阻值;以及⑺選擇適當 7分子型分散劑’一方面可改善低分子型分散性之低耐 …、性,一方面也可大幅提升未來產品應用之可靠性,里原 理主要是藉由特殊高分子型分散劑’可輕易地附著於無機 粉體表面,與有機樹㈣具有優良相容性甚至些許反應 性’可有效解決低分子型分散劑之缺點,利用預反應的過 程,提升其材料之阻值穩定性。= The material has excellent electrical stability, and is more suitable for PCB processing. The means include: (1) selecting the appropriate epoxy resin composition, to = flat fuelability and adhesion; (7) filling the nanotype with epoxy resin and Only the conductive powder is adjusted to adjust its resistance value; and (7) the selection of the appropriate 7-molecular dispersant can improve the low-molecular-type dispersibility, and on the other hand, it can greatly improve the reliability of future product applications. The principle of the low-molecular dispersant can be effectively solved by the special polymer type dispersant, which can be easily attached to the surface of the inorganic powder and has excellent compatibility with the organic tree (4) and even some reactivity. Use the pre-reaction process to improve the resistance stability of the material.

所仔到之電阻漿料,經由網板印刷技術及低溫硬化溫度 條件,製得具有高玻璃轉移溫度(Tg>150<t)、優良之阻值 穩疋丨生及較小的誤差變異性(Tolerance g 6%)之電阻材料。 詳言之,電阻材料的應用已相當廣泛,但一般製程仍以 鬲溫燒結為主’難以應用在有機基板或傳統PCB製程上, 而若使用高分子/奈米導體混成材料,藉由高分子樹脂材 料與基板的相容特性,可使用一般基板或PCB製程來完成 埋入式電阻的製作。為了使高分子/奈米導體混成材料有 良好的特性’包括電性穩定性與熱安定性,基本上可由樹 脂系統的選擇與網印技術來決定;其中如低溫硬化、高溫 的穩定性佳’以及鋼層與介電層及基板間有良好的接著性 -9- 月叫曰修(更)正替換買j 等,必須由樹脂系統的選擇來達成,而材料所需之 性’則必須#由添加奈米導電粉體來提供,至於電性之穩 定性則須經由特殊預反應製程來達到,這樣才能製作出同 時兼具樹脂之低溫加工性與阻值穩定性融於一體的高分 子/奈米導體混成材料。 由於埋入式電阻基板之需求主要應用於高頻與高速電 子產品’對於熱性質及電性質之穩定性需求逐漸增加,因 此所揭露之預反應型高分子/奈米導體混成材料,除了重 視阻值之準確性外,也必須同時重視其熱性質以及電性之 穩定性問題。因此材料配方比例之調配,製程條件之掌 控,以及網印之技術,均為本發明之重點。 【實施方式】 本發明之南分子厚膜電阻組成所包含之原料可選擇如 下: 環氣樹脂 (a)The resistive slurry obtained has a high glass transition temperature (Tg > 150 < t), excellent resistance value stability and small error variability through screen printing technology and low temperature hardening temperature conditions ( Tolerance g 6%) of the resistance material. In particular, the application of resistive materials has been quite extensive, but the general process is still based on sinter sintering. It is difficult to apply on organic substrates or traditional PCB processes. If polymer/nanoconductor hybrid materials are used, polymers are used. The compatibility of the resin material with the substrate can be achieved by using a general substrate or PCB process to complete the fabrication of the buried resistor. In order to make the polymer/nanoconductor hybrid material have good characteristics, including electrical stability and thermal stability, it can be basically determined by the choice of resin system and screen printing technology; among them, low temperature hardening and high temperature stability are good. And the good adhesion between the steel layer and the dielectric layer and the substrate - 9 - month called repair (more) is to replace the purchase j, etc., must be achieved by the choice of resin system, and the required properties of the material 'is necessary # It is provided by the addition of nano-conductive powder, and the stability of electrical properties must be achieved through a special pre-reaction process, so that a polymer which combines both low-temperature processability and resistance stability of the resin can be produced. Nano conductor hybrid material. Since the demand for buried resistor substrates is mainly applied to high-frequency and high-speed electronic products, the demand for thermal properties and electrical properties is gradually increasing. Therefore, the disclosed pre-reactive polymer/nanoconductor hybrid materials are not only important. In addition to the accuracy of the value, it is also necessary to pay attention to both the thermal properties and the stability of the electrical properties. Therefore, the formulation of the material formulation ratio, the control of the process conditions, and the technology of screen printing are the focus of the present invention. [Embodiment] The raw material of the south molecular thick film resistor composition of the present invention may be selected as follows: 环气树脂 (a)

(b) 雙酚-A-二縮水甘油醚環氧樹脂(Diglycidyl ether 〇f bisphenol A epoxy) (c) 四邊雙酚-A-二縮水甘油醚環氧樹脂(Tetrabr〇m〇 bisphenol A diglycidyl ether epoxy) (d) 環狀脂肪族環氧樹脂(Cycl〇 aliphatic epoxy 1336085 ___^ 始年义月丨q日修(更)正替換頁;(b) Diglycidyl ether 〇f bisphenol A epoxy (c) Tetrabr 〇 bisphenol-A-diglycidyl ether epoxy (Tetrabr〇m〇bisphenol A diglycidyl ether epoxy (d) Cyclic Aliphatic Epoxy Resin (Cycl〇aliphatic epoxy 1336085 ___^ The beginning of the year of the month of the month 丨 q day repair (more) is replacing the page;

_ --------------------------- J resin)。例如.二環戊二稀環氧樹脂(diCyCi〇pentadiene epoxy resin) ° (e)含萘環環氧樹脂(Naphthalene epoxy resin)。 ⑴雙苯基環氧樹脂(Diphenylene epoxy resin)。 (g) 紛盤壤氧樹脂(Phenol Novolac epoxy resin) (h) 4 曱盼酸·ί展氧樹脂(〇-cresol Novolac epoxy resin) 硬化劑 (a)雙胺(diamine): H2N—Rj — NH2_ --------------------------- J resin). For example, diCyCi〇pentadiene epoxy resin ° (e) contains a naphthalene epoxy resin. (1) Diphenylene epoxy resin. (g) Phenol Novolac epoxy resin (h) 4 cre-cresol Novolac epoxy resin Hardener (a) Diamine: H2N-Rj — NH2

Ri可為方香基、脂肪基、環脂肪基或含silane脂肪Ri can be a square base, a fat base, a cyclo fat base or a silane containing fat

R2: X, ch2j S〇2, O, S, C(CH3)2 r3~Ri〇: h, ch3, c2h5, c3h7, C(CH3)3, ... (b)齡樹脂(phenol resin)R2: X, ch2j S〇2, O, S, C(CH3)2 r3~Ri〇: h, ch3, c2h5, c3h7, C(CH3)3, ... (b) phenol resin

紛基樹醋(Phenol based resin),例如:Phenol based resin, for example:

萘酌基樹 S旨(Naphthol based resin),例如Naphthol based resin, for example

OH • 11- 1336085 . * 1¾年&月4曰修(更)正替換頁OH • 11- 1336085 . * 13⁄4 years & 4 months repair (more) replacement page

二環戊二烯樹 S旨(Dicyclopentadiene resin)Dicyclopentadiene resin

4,4’,4”亞乙基三苯紛(4,4’,4”£1:11;711<16116 1;143卩11611〇1)4,4',4"Ethylene triphenylene (4,4',4"£1:11;711<16116 1;143卩11611〇1)

OH 四苯氧乙烧(Tetra phenylolethane)OH Tetra phenylolethane

HO OH 四二曱紛乙烧(Tetraxylenol ethane)HO OH Tetraxylenol ethane

四曱紛氧乙烧(Tetracresololethane) -12- 1336085Tetracresololethane -12- 1336085

催化劑 (a) 陽離子系觸媒 三氟化硼錯物,如rnh2.bf3、r2nh.bf3、R n.bf (b) 陰離子系觸媒 三級胺、金屬氫氧化物、單環氧化物之配位陰離子觸 媒,如 R3N,TMG,NCH2C-C(NH)-N(CH3)2 等 (c) 咪喷(Imidazole) 1- 甲基喷。坐(1-methylimidazole) l,2-:T*^0^(l,2-dimethylimidazole) 2_ 七癸味唾(2-heptadecylimidazole) 2- 乙基-4-曱基咪口坐(2-ethyl-4-methylimidazole) 分散劑 本發明中所採用的高分子型分散劑,使其與無機粉體具 有良好的接著性及分散性,且又與有機樹脂間有優良之相 谷法及为散性。可用之高分子分散劑包括有共聚酯-酿 胺 '聚酯類等。 主要為高導電之粉體,例如:金屬粉體(如金、銀、銅、 鋁銀鎂合金…等)、金屬氧化物(如氧化銀、氧化鋁…等)、 碳黑、石墨等。 -13· 1336085 · q抨竹]θΰίΐ.(更)正替換頁 以下將舉例說明本發明之技術所在,其材料含量如表一 所示,其中E.poxy 1為雙紛-Α-二縮水甘油驗(bisphenol-A diglycidyl ether),Epoxy 2為四漠雙紛-A-二縮水甘油醚 (tetrabromo disphenol-A diglcidyl ether),而 Epoxy 3 為環 狀脂肪族環氧樹脂(cyclo aliphatic epoxy)。Epoxy 4為多官 能基樹脂(Multifunctional epoxy),其化學式如下,且其官 能基大於等於4。Catalyst (a) Cationic catalyst boron trifluoride complex, such as rnh2.bf3, r2nh.bf3, R n.bf (b) anionic catalyst third-grade amine, metal hydroxide, monoepoxide An anion catalyst such as R3N, TMG, NCH2C-C(NH)-N(CH3)2, etc. (c) Imidazole 1-methyl spray. 1-methylimidazole l,2-:T*^0^(l,2-dimethylimidazole) 2_2-heptadecylimidazole 2-ethyl-4-mercaptopurine (2-ethyl- 4-methylimidazole) Dispersant The polymer type dispersant used in the present invention has good adhesion and dispersibility with an inorganic powder, and has excellent phase-to-valley method and dispersibility with an organic resin. Polymer dispersants which can be used include copolyester-branched amines and the like. It is mainly a highly conductive powder such as metal powder (such as gold, silver, copper, aluminum silver magnesium alloy, etc.), metal oxides (such as silver oxide, aluminum oxide, etc.), carbon black, graphite, and the like. -13· 1336085 · q抨竹]θΰίΐ. (More) Positive Replacement Page The following is a description of the technique of the present invention, the material content of which is shown in Table 1, wherein E.poxy 1 is a double-indole-diglycidyl (bisphenol-A diglycidyl ether), Epoxy 2 is tetrabromo disphenol-A diglcidyl ether, and Epoxy 3 is a cyclo aliphatic epoxy. Epoxy 4 is a multifunctional epoxy having the following chemical formula and having a functional group of 4 or more.

表一 組成 比較例1 實施例1 實施例2 實施例3 實施例4 預反應 無 有 Epoxy 1 (g) 7.11 7.1 7.0 6.93 6.93 Epoxy 2 (g) 4.44 4.44 4.38 4.33 4.33 Epoxy 3 (g) 1.24 1.24 1.22 1.21 1.21 Epoxy 4 (g) 1.78 1.77 1.75 1.73 1.73 硬化劑(g) 3.36 3.36 3.31 3.28 3.28 催化劑(g) 0.0626 0.0625 0.062 0.061 0.061 分散劑1 (g) 0.513 0.513 0.51 0.51 0.51 碳黑(g) 4.04 4.06 4.04 3.88 4.08 銀片(g) 0 0 0 29 30 該環氧樹脂系統總共佔總固體含量30〜80%之重量百分Table 1 Composition Comparative Example 1 Example 1 Example 2 Example 3 Example 4 Pre-reaction without Epoxy 1 (g) 7.11 7.1 7.0 6.93 6.93 Epoxy 2 (g) 4.44 4.44 4.38 4.33 4.33 Epoxy 3 (g) 1.24 1.24 1.22 1.21 1.21 Epoxy 4 (g) 1.78 1.77 1.75 1.73 1.73 Hardener (g) 3.36 3.36 3.31 3.28 3.28 Catalyst (g) 0.0626 0.0625 0.062 0.061 0.061 Dispersant 1 (g) 0.513 0.513 0.51 0.51 0.51 Carbon black (g) 4.04 4.06 4.04 3.88 4.08 Silver (g) 0 0 0 29 30 The epoxy resin system accounts for 30~80% by weight of total solids.

比,該碳黑佔總固體5〜20%之重量百分比,高分子分散劑 佔總固體0.5〜5%之重量百分比。該硬化劑佔總固體3-20% 之重量百分比。另外,實施例1到4中,該銀片佔總固體 0-60%之重量百分比。其中導電粉體佔總固體5-65%之重 量百分比。 -14- 1336085 ' 叫年彳月Θ日修(更)正替換頁 表一中實施例之製造程序如下,惟比較例係不執行下列 步驟3之預反應製;程。 1. 將環氧樹脂Epoxy 1 ~4與溶劑置於反應瓶中加熱至 90〜95°C使之混合,待冷卻。 2. 於上述溶液中添加適量高導電性粉體,而後高速攪 拌均勻成混成溶液。所添加之高導電性粉體之含量大約佔 總固體5〜65 %之重量百分比。The carbon black accounts for 5 to 20% by weight of the total solids, and the polymer dispersant accounts for 0.5 to 5% by weight of the total solids. The hardener comprises from 3 to 20% by weight of the total solids. Further, in Examples 1 to 4, the silver flakes accounted for 0-60% by weight of the total solids. The conductive powder accounts for 5-65% by weight of the total solids. -14- 1336085 'The year of the year is revised (more) is replaced. The manufacturing procedure of the example in Table 1 is as follows, but the comparative example does not perform the pre-reaction system of the following step 3. 1. Epoxy Epoxy 1 ~4 and solvent were placed in a reaction flask and heated to 90-95 ° C to be mixed and allowed to cool. 2. Add an appropriate amount of highly conductive powder to the above solution, and then mix at a high speed to form a mixed solution. The amount of the highly conductive powder to be added is about 5 to 65% by weight based on the total solids.

3 . 將上述混成溶液在高溫1 00~140°C進行預反應約30 分鐘至5小時,而後降至80°C,並加入適量硬化劑及催化 劑以充分溶解,再降至室溫。 4. 取適量環氧樹脂混成溶液,並加入適量分散劑及其 他導電粉體(視需要添加)。 5. 將得到之混合物在以三滾輪分散完全,即可得到分 散良好之混成物電阻漿料。 6. 將上述之混成物電阻漿料藉由網版印刷製程,印製 在具有圖案(pattern)之位置上形成電阻。3. The above mixed solution is pre-reacted at a high temperature of 00 to 140 ° C for about 30 minutes to 5 hours, and then lowered to 80 ° C, and an appropriate amount of a hardener and a catalyst are added to dissolve sufficiently, and then lowered to room temperature. 4. Take an appropriate amount of epoxy resin mixture solution and add appropriate amount of dispersant and other conductive powder (add as needed). 5. The obtained mixture is completely dispersed in three rolls to obtain a well-dispersed mixed resistance resin. 6. The above-mentioned mixed resistive paste is printed by a screen printing process to form a resistor at a position having a pattern.

7. 製得之電阻經電性量測後,依材料組成份之不同所 得到之阻值範圍約為35Ω〜1.5kQ。 8. 在熱性質測試上,電阻組成之Tg在150〜190°C範圍。 詳言之,首先在反應瓶中加入適量的環氧樹脂,之後加 入適量的溶劑BC(二乙二醇單丁醚,Diethylene Glycol Monobutyl ether)及二甲基甲醯胺(Dimethyl formamide ; DMF),而後加熱至90°C〜95°C使環氧樹脂完全溶解並降 溫。將上述溶液中添加適量導電性粉體,而後高速攪拌均 -15- 1336085 I柯年r月ή日ίΐ:更)王替槔頁 勻後,在高溫下進行預反應或是不反應方式,而後降溫後 加入適量硬化劑如雙胺或酚樹脂及催化劑以充分溶解,再 降至室溫。取前配製之高分子/導電粉體混成溶液,加入 適量的高分子型分散劑(分散劑丨),隨後若導電性不足可 再加入適量比例的導電粉體(如碳黑,粒徑1〇〜i〇〇nm)、 銀片(1〜10 μηι)或其他添加劑,均勻攪拌並經三滾輪分散 後,形成聚合物/導電粉體混成漿料,並用鋼絲板網印方 法印在固定的圖案上,以加熱烘烤方式去除溶劑,並使之 交聯硬化形成厚膜電阻。本發明厚膜電阻之製作流程可歸 納如圖1所示。 該厚膜電阻之測試結果列於表二,其中玻璃轉移溫度 (Tg)係以熱機械分析儀(Thermal Mechanical Analyzer ; TMA)測得之。 表二 特性 比較例1 實施例1 實施例2 實施例3 實施例 Tg(°C) 171 172 175. 177 178 電阻(Ω) 746-1041 827-898 768-832 39.17~42.69 3 8.05-41.95 變異性 (+18.08,-15.38) (+3.67, -4.53) (+3.29, -4.66) (+5.32, -3.36) (+6.03, -3.82) 比較例1為未進行預加熱反應過程,其中所含成分和實 施例1及實施例2之比例大致相同,但其網印後的電阻值變 異性(Tolerance)就差異很大,因為預加熱反應的過程可促 使奈米粉體與環氧部分結構進行反應,形成分子量較大且 較穩定的分子結構。另外實施例3及實施例4為添加2種導 電粉體之配方(其中碳黑粒徑為10〜100nm、銀片粒徑為 1〜10 μιη),都有經過預反應過程,其所做出之電阻材料, •16- 1336085 叫年k月日修(更)正替換頁, „| ~-*-~~**"**~'·***' *·*^'* * 1 '* ' —. . 除阻值較小外,電阻值變異性也較小。 由以上的結果·得知’要獲得一個具高穩定阻值之高分子 ' /導電粉體混成材料,其配方中必須包含至少一高官能基 - 之環氧樹脂、高分子型分散劑、以及至少一具奈米粒徑之 導電粉體,如此才能製得一類真正具有應用價值之埋入式 電阻材料。 .本發明之技術内谷及技術特點已揭示如上,然而熟悉本 項技術之人士仍可能基於本發明之教示及揭示而作種種 •不背離本發明精神之替換及修飾。因此,本發明之保護範 圍應不限於實施例所揭示者’而應包括各種不背離本發明 之替換及修飾,並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 圖1顯示本發明之高分子厚膜電阻組成之製作、充程 【主要元件符號說明】 無 -17-7. After the measured electrical resistance is measured by electrical quantity, the resistance range obtained by the difference of the material composition is about 35 Ω~1.5kQ. 8. In the thermal property test, the Tg of the resistance component is in the range of 150 to 190 °C. In particular, first add an appropriate amount of epoxy resin to the reaction flask, and then add an appropriate amount of solvent BC (Diethylene Glycol Monobutyl ether) and Dimethyl formamide (DMF). Then, heating to 90 ° C ~ 95 ° C allows the epoxy resin to completely dissolve and cool. Adding an appropriate amount of conductive powder to the above solution, and then stirring at a high speed of -15 - 1336085 I. The 王 槔 ή ΐ 更 更 更 更 更 更 更 更 更 更 更 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 匀 匀 匀 匀 匀 匀After cooling, an appropriate amount of a hardener such as a bisamine or a phenol resin and a catalyst are added to fully dissolve and then lowered to room temperature. The polymer/conductive powder mixture solution prepared beforehand is added, and an appropriate amount of the polymer type dispersant (dispersant 丨) is added, and then if the conductivity is insufficient, an appropriate amount of the conductive powder (such as carbon black, particle size 1 粒径) may be added. ~i〇〇nm), silver plate (1~10 μηι) or other additives, uniformly stirred and dispersed by three rollers to form a polymer/conductive powder mixed slurry, and printed on a fixed pattern by wire mesh screen printing method The solvent is removed by heat baking and cross-linked to form a thick film resistor. The manufacturing process of the thick film resistor of the present invention can be summarized as shown in Fig. 1. The test results of the thick film resistor are shown in Table 2, wherein the glass transition temperature (Tg) is measured by a Thermo Mechanical Analyzer (TMA). Table 2 Characteristics Comparative Example 1 Example 1 Example 2 Example 3 Example Tg (°C) 171 172 175. 177 178 Resistance (Ω) 746-1041 827-898 768-832 39.17~42.69 3 8.05-41.95 Variability (+18.08, -15.38) (+3.67, -4.53) (+3.29, -4.66) (+5.32, -3.36) (+6.03, -3.82) Comparative Example 1 is a preheating reaction process in which the components are contained. The ratios of the first embodiment and the second embodiment are substantially the same, but the resistance value variability (Tolerance) after screen printing differs greatly because the preheating reaction process promotes the reaction of the nano powder with the epoxy moiety structure. A molecular structure having a large molecular weight and a relatively stable structure is formed. Further, in the third embodiment and the fourth embodiment, a formulation in which two kinds of conductive powders are added (in which the carbon black has a particle diameter of 10 to 100 nm and a silver plate has a particle diameter of 1 to 10 μm), both have undergone a pre-reaction process. Resistive material, • 16- 1336085 is called the year of the month (more) is replacing the page, „| ~-*-~~**"**~'·***' *·*^'* * 1 '* ' —. . In addition to the small resistance value, the resistance value variability is also small. From the above results, it is known that 'to obtain a polymer with high stability resistance' / conductive powder mixed material, its formulation It must contain at least one high-functional epoxy resin, a polymeric dispersant, and at least one conductive powder having a nanometer particle size, so as to obtain a kind of embedded electrical resistance material with real application value. The technical and technical features of the present invention have been disclosed above, but those skilled in the art can still make various modifications and modifications based on the teachings and disclosure of the present invention without departing from the spirit and scope of the present invention. It is to be understood that the invention is not to be construed as limited It is covered by the following patent application. [Simplified description of the drawings] Fig. 1 shows the fabrication and charging of the thick film resistor composition of the present invention. [Main component symbol description] None -17-

Claims (1)

1336085 衫降捌叫日修(¾正替換薄 _ 呼 095149733號專利申請案 文申請專利範圍替換本(99年8月) 十、申請專利範圍: 1. 一種高分子厚膜電阻組成,包含: 一環氧樹脂系統,包含一環氧樹脂,其官能基大於等 於4 ; 至少一導電粉體,其平均粒徑介於10〜100 nm ; 一硬化劑;以及 一高分子分散劑; 藉由選用該環氧樹脂系統,使該高分子厚膜電阻組成 之玻璃轉移溫度至少1 50°C,其中該高分子分散劑係選 自共聚酯-醯胺及聚酯類組成之群。 2.根據請求項1之高分子厚膜電阻組成,其中該環氧樹脂 包含如下之化學結構:1336085 捌 捌 日 日 修 ( 3 3 ( 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 An oxy-resin system comprising an epoxy resin having a functional group of 4 or more; at least one conductive powder having an average particle diameter of 10 to 100 nm; a hardener; and a polymer dispersant; The oxygen resin system is characterized in that the polymer has a thick film resistance composition having a glass transition temperature of at least 150 ° C, wherein the polymer dispersant is selected from the group consisting of a copolyester-melamine and a polyester. A polymer thick film resistor composition, wherein the epoxy resin comprises the following chemical structure: 3. 根據請求項1之高分子厚膜電阻組成,其中該環氧樹脂 系統另至少包含雙酚A型環氧樹脂、環狀脂肪族環氧樹 脂、含萘環環氧樹脂、雙苯基環氧樹脂或酚醛環氧樹脂。 4. 根據請求項1之高分子厚膜電阻組成,其中該環氧樹脂 系統另包含雙酚-A-二縮水甘油醚環氧樹脂、四溴雙酚 -A-二縮水甘油醚環氧樹脂以及環狀脂肪族環氧樹脂。 5. 根據請求項1之高分子厚膜電阻組成,其中該環氧樹脂 系統佔總固體含量30〜80%之重量百分比。 6.根據請求項1之南分子厚膜電阻組成’其中該導電粉體 叫年f月叫曰修(更}正替換頁 包含兩種或兩種以上之粒徑分佈。 7. 根據請求項一之高分子厚膜電阻組成,其中該導電粉體 選自銀粉、碳黑及石墨組成之群。 8. 根據凊求項丨之高分子厚膜電阻組成’其中該導電粉體 佔總固體5-65%之重量百分比。 9. 根據明求項丨之向分子厚膜電阻組成,其中該導電粉體 係碳黑。 10. 根據叻求項9之兩分子厚膜電阻組成,其中該碳黑佔總 固體5〜20%之重量百分比。 11. 根據喷求項9之尚分子厚膜電阻組成,其中該導電粉體 另包含銀片,且其平均粒徑介於卜切㈣。 12. 根據明求項!!之高分子厚膜電阻組成,其中該銀片佔總 固體0-60%之重量百分比。 13. 根據明求項丨之高分子厚膜電阻組成,其中該高分子分 政劑佔總固體0.5〜5 %之重量百分比。 14根據明求項丨之尚分子厚膜電阻組成,其中該硬化劑佔 總固體3-20%之重量百分比。 15. 根據請求項14之高分子厚膜電阻組成,其中該硬化劑係 選自雙胺 '酴樹腊及酸無水物組成之群。 16. 根據請求項i之高分子厚膜電阻組成,其中該環氧樹脂 系統和該導電粉體係先混合,並在1〇〇〜14〇它之溫度進 行預反應30分鐘至5小時。 17. 根據請求項r高分子厚膜電阻組成,其可藉由網印製 程,應用於印刷電路板或1C基板用之内埋式電阻元件。 -2 - 日修(更)正替换頁 I3360S5 1 8.根據清求項1之古八工;. 八之回刀子厚膜電阻組成,其另包含一催化 劑。 . 19.根據請求項18之高分子厚膜電阻組成,其中該催化劑係 選自%離子系觸媒、陰離子系觸媒及味。坐組成之群。 2〇_ —種高分子厚膜電阻絚成之製作方法包含下列步驟: />=〇合一環氧樹脂系統及至少一導電粉體,其中該環氧 樹脂系統所製成之高分子厚膜電阻具有至少150它的玻 璃轉移溫度’且包含一環氧樹脂,其官能基大於等於4; 加熱該環氧樹脂系統及導電粉體以進行預反應; 加入一硬化劑後降溫;以及 加入一高分子分散劑以製成電阻漿料。 21. 根據請求項20之高分子厚膜電阻組成之製作方法,其中 該環氧樹脂系統及導電粉體係於之溫度加熱 30分鐘至5小時以進行預反應。 22. 根據請求項20之高分子厚膜電阻組成之製作方法,其另 包含將該電阻漿料利用網版印刷製作厚膜電阻之步驟。 23. 根據請求項20之高分子厚膜電阻組成之製作方法,其中 降溫後係再次添加導電粉體。 24. 根據請求項21之高分子厚膜電阻組成之製作方法,其中 該環氧樹脂系統包含如下之化學結構:3. The polymer thick film resistor composition according to claim 1, wherein the epoxy resin system further comprises at least a bisphenol A type epoxy resin, a cyclic aliphatic epoxy resin, a naphthalene ring-containing epoxy resin, and a diphenyl ring. Oxygen resin or phenolic epoxy resin. 4. The polymer thick film resistor composition according to claim 1, wherein the epoxy resin system further comprises bisphenol-A-diglycidyl ether epoxy resin, tetrabromobisphenol-A-diglycidyl ether epoxy resin, and A cyclic aliphatic epoxy resin. 5. The polymer thick film resistor composition according to claim 1, wherein the epoxy resin system accounts for 30 to 80% by weight of the total solid content. 6. According to claim 1, the south molecular thick film resistor composition 'where the conductive powder is called 曰 曰 repair (more} positive replacement page contains two or more particle size distributions. 7. According to claim one The polymer consists of a thick film resistor, wherein the conductive powder is selected from the group consisting of silver powder, carbon black and graphite. 8. According to the composition of the polymer, the thick film resistor composition is 'the conductive powder accounts for 5 - 65% by weight. 9. According to the composition of the thick-film resistance of the molecule, wherein the conductive powder system is carbon black. 10. According to the two-layer thick film resistance composition of the item 9, wherein the carbon black accounts for The solid content is 5 to 20% by weight. 11. According to the composition of the thick film resistor of the invention, wherein the conductive powder further comprises a silver sheet, and the average particle diameter is in the range of (4). The composition of the polymer thick film resistor, wherein the silver sheet accounts for 0-60% by weight of the total solids. 13. According to the composition of the thick film resistor of the polymer, the polymer component accounts for the total a solid weight of 0.5 to 5% by weight. a film resistance composition, wherein the hardener accounts for 3-20% by weight of the total solids. 15. The polymer thick film resistor composition according to claim 14, wherein the hardener is selected from the group consisting of diamines, eucalyptus waxes and acid anhydrides. The group consisting of 16. The polymer thick film resistor composition according to claim i, wherein the epoxy resin system and the conductive powder system are first mixed, and pre-reacted at a temperature of 1 〇〇 14 14 for 30 minutes to 5 17. According to the request item r polymer thick film resistor composition, which can be applied to printed circuit boards or embedded resistive components for 1C substrates by screen printing process. -2 - Japanese repair (more) replacement page I3360S5 1 8. According to the resolving item 1 of the ancient eight-worker; eight-back knife thick film resistor composition, which additionally contains a catalyst. 19. According to claim 18, the polymer thick film resistance composition, wherein the catalyst is selected From the group consisting of a ionic catalyst, an anionic catalyst, and a scent. 2 〇 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ At least one conductive powder, wherein the epoxy resin is The polymer thick film resistor has a glass transition temperature of at least 150 and comprises an epoxy resin having a functional group of 4 or more; heating the epoxy resin system and the conductive powder for pre-reaction; adding a hardening After the agent is cooled, and a polymer dispersant is added to form a resistive paste. 21. The method for fabricating a polymer thick film resistor composition according to claim 20, wherein the epoxy resin system and the conductive powder system are heated at a temperature of 30 The pre-reaction is carried out in minutes to 5 hours. 22. The method for producing a polymer thick film resistor composition according to claim 20, further comprising the step of forming a thick film resistor by screen printing the resistive paste. 23. The method according to claim 20, wherein the conductive powder is added again after the temperature is lowered. 24. The method of fabricating a polymer thick film resistor composition according to claim 21, wherein the epoxy resin system comprises the following chemical structure: 25.根據請求項20之高分子厚膜電阻組成之製作方法,其中 1336085 明年y月4日修(更)正替換頁 該環氧樹脂系統另至少包含雙酚A型環氧樹脂、環狀脂 肪族環氧樹.脂、含萘環環氧樹脂、雙苯基環氧樹脂或酚 、藤環氧樹脂。 ,26.根據請求項20之高分子厚膜電阻組成之製作方法,其中 該環氧樹脂系統佔總固體30〜80%之重量百分比。 27. 根據請求項20之高分子厚膜電阻組成之製作方法,其中 該導電粉體係選自銀粉、碳黑及石墨組成之群。 28. 根據請求項20之高分子厚膜電阻組成之製作方法,其中 > 該導電粉體係碳黑,且其平均粒徑介於1〇〜1〇〇nm。 29. 根據請求項28之高分子厚膜電阻組成之製作方法,其中 該導電粉體另包含銀片,且其平均粒徑介於卜⑺叫。 30·根據請求項29之高分子厚膜電阻組成之製作方法,其中 該銀片佔總固體0〜60%之重量百分比,且該碳黑佔總固 體5〜2〇%之重量百分比。 31.根據請求項20之高分子厚膜電阻組成之製作方法,其中 該高分子分散劑佔總固體〇.5〜5%之重量百分比。25. The method for fabricating a polymer thick film resistor composition according to claim 20, wherein 1336086 is to be replaced on the fourth day of next year, and the epoxy resin system further comprises at least a bisphenol A type epoxy resin and a cyclic fat. Family epoxy tree. Fat, naphthalene ring epoxy resin, bisphenyl epoxy resin or phenol, rattan epoxy resin. 26. The method of fabricating a polymer thick film resistor composition according to claim 20, wherein the epoxy resin system comprises 30 to 80% by weight of the total solids. 27. The method of fabricating a polymer thick film resistor composition according to claim 20, wherein the conductive powder system is selected from the group consisting of silver powder, carbon black, and graphite. 28. The method according to claim 20, wherein the conductive powder system has carbon black and an average particle diameter of 1 〇 to 1 〇〇 nm. 29. The method of fabricating a polymer thick film resistor composition according to claim 28, wherein the conductive powder further comprises a silver flake, and the average particle diameter thereof is in the range of (7). 30. The method according to claim 29, wherein the silver sheet comprises 0 to 60% by weight of the total solids, and the carbon black comprises 5 to 2% by weight of the total solid. The method for producing a polymer thick film resistor composition according to claim 20, wherein the polymer dispersant accounts for 5 to 5% by weight of the total solids.
TW95149733A 2006-12-29 2006-12-29 Composition of polymer thick film resistor and manufacturing method thereof TWI336085B (en)

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