KR20100065678A - Addressable implantable functional brain electrode based on rf stimulation and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A brain stimulation electrode of the RF base selective functional transplantation type is provided, which can overcome the brain dysfunction by generating the metergasis of brain nerves about the innate disorders and acquired disorders from various reasons. CONSTITUTION: A brain stimulation electrode of the RF base selective functional transplantation type includes: a step(S10) of forming a supporting part with the wire; a step(S20) of forming an electrode tip by raising the nanostructures from the supporting part; a step(S30) of coating the electrode tip and supporting part with the transparent conductive film; a step(S40) of forming the insulating protection layer on the supporting part; and a step(S50) of interlinking the power supply unit and the supporting part transmitting and receiving each frequency using the wireless telecommunication.

Description

Addressable Implantable Functional Brain Electrode based on RF Stimulation and Method for manufacturing the same

The present invention relates to an RF-based selective functional implantable brain stimulation electrode and a method for manufacturing the same, in particular, the present invention is inserted into the space between the skull and cerebral cortex for stimulation of the cerebral cortex The present invention relates to an RF-based selective functional bio-implantable brain stimulation electrode capable of inducing a change in neural function and a method of manufacturing the same.

In general, research has been underway for a long time on a technique for performing electrical stimulation of the central nervous system in the brain to recover the function of the brain in congenital / acquired brain nerve injury patients. Most of these early studies of electrical stimulation have been about mapping brain functions to specific parts of the brain function, such as motor target areas, spatial processing capabilities, and language domains. Early research led to functional maps based on brain function mapping.

Recently, functional maps based on brain function mapping have been used to treat diseases such as depression, Parkinson's disease, stroke, epilepsy, and chronic neuropathic pain. This treatment method is applied directly to the treatment of the disease by introducing transcranial magnetic stimulation and transcranial DC electric stimulation. It can be seen that electrical stimulation affects symptom improvement by activating or inhibiting the connections between nerves. As such, the devices for stimulating the cerebral cortex in order to treat conventional brain diseases are mainly using a transcranial stimulation device.

However, the stimulation through the conventional transcranial stimulation device has the disadvantage that the stimulus is transmitted to the cortex unnecessarily wider than the target site of the cerebral cortex, and due to the stimulation through the cranial cradle, the stimulus through the transcranial stimulus is strong in order to substantially stimulate the cerebral cortex. There is a problem that should be stimulated.

Thus, in order to overcome the shortcomings of the conventional transcranial stimulation apparatus, an electrode inserted to the outside of the epidural is used, but this also requires a wide range of scalp and skull incision to insert the electrode in advance. To this end, general anesthesia is inevitable and only results in patient discomfort.

As described above, in order to remove the electrode after the electric stimulation according to the related art, the procedure of incision of the scalp and the skull under the general anesthesia must be repeated once again, thereby causing inconvenience to the patient, and the existing electrode is manufactured according to the size control in the manufacturing process. There was a problem in that the time required for the manufacturing process increases according to manufacturing and process changes.

On the other hand, although the conventional electrode material uses a high elastic metal material, these high elastic metal materials are not excellent in characteristics as a bio-friendly material. Thus, when such highly elastic metal materials are used as electrodes, corrosion occurs due to reaction with the sap in the human body. In addition, when the electrode made of a high elastic metal material is implanted in a living body there is a limit of the use period, which causes a problem causing pain and inflammation in the patient. In addition, the electrode made of a high elastic metal material is relatively large in size and has the disadvantage of transmitting a stimulus to a wider area than the target site of the cerebral cortex, and there is a problem in that a strong strength electrode has to be given to give a desired strength of the stimulus.

An object of the present invention devised to solve the above-described problem is inserted into the space between the skull and the cerebral cortex, and selectively using the radio frequency (RF) to selectively By providing electrical stimulation to the cerebral cortex, causing changes in the function of the brain nerves for congenital / acquired disorders caused by various causes, thereby providing a living implantable electrode and a method of manufacturing the electrode that can overcome brain dysfunction There is.

RF-based selective functional bio-implantable brain stimulation electrode according to a preferred embodiment of the present invention for achieving the above object is an electrode tip (tip) consisting of nanostructures; A support for supporting the nanostructure of the electrode tip and transmitting power; A coating part including at least one of a transparent conductive film coated on the electrode tip and the support part and an insulating protective film coated to insulate the support part from the external environment so as to transfer power to the electrode tip; And a power supply unit for selectively classifying and transmitting magnetic poles according to the frequency of the power and the wireless signal supplied wirelessly from the outside to the electrode tip through the support unit.

In addition, the frequency of the wireless signal received from the power supply unit includes a range of 1 kHz to 9999 GHz, it is preferable to operate according to the frequency of the wireless signal to deliver an electrical stimulus to the cerebral cortex through the electrode tip.

In addition, the power supply unit, it is preferable to receive the external power wirelessly via Bluetooth or Zigbee communication.

The electrode tip may be formed of at least one of nanorods, nanowires, nanotubes, and nanobelts having a length of 1 nm to 1000 um and a thickness of 1 nm to 1000 um. It is preferable to include.

In addition, the electrode tip is a transition metal-based, Si, Ge, As, including one or more combinations of carbon nanotubes (CNTs), Ti, V, Cr, Zn, Y, Zr, Nb, and W. Semimetals based on one or more combinations, Platinum based on one or more combinations of Ru, Rd, Pd, Os, Ir, Pt, Precious metals containing one or more combinations of Ag, Au, Pt, Metal oxide based (MxOy M = Ti, V, Cr, Zn, Y, Zr, Nb, Transmetals containing one or more combinations of, Si, Ge, As-metals including one or more combinations of, Ru, Rd, Pd, Os A combination of one or more of a platinum group system including a combination of one or more of Ir, Pt, and a precious metal group including one or more combinations of Ag, Au, and Pt, O = Oxygen, x and y are quantitative ratios of metal and oxygen) It is preferable that it is a nanostructure containing the above.

In addition, the support part is a transition metal type including at least one of Ti, V, Cr, Zn, Y, Zr, Nb, and W made of 1 to 100 mm in length and 1 to 1000 um in thickness, Ru, Rd, Pd, Os It is preferable to include a wire formed of at least one of a platinum group system including a combination of at least one of Ir, Pt, and a noble metal group system including at least one combination of Ag, Au, and Pt.

In addition, the insulating protective film of the coating part is polystyrene resin, acrylonitrile / butadiene / styrene resin, acrylic resin, polycarbonate, polyphenylene oxide, vinyl chloride, soft polypropylene, glass reinforced fiber, polybutylene terephthalate, phenol It is preferable that it is comprised from the organic substance containing one or more of parylene resin, and formed in thickness of 1-1000 um.

On the other hand, RF-based selective functional bio implantable brain stimulation electrode manufacturing method according to an embodiment of the present invention is inserted into the space between the skull (Ckull) and the cerebral cortex (Cerebral Cortex) using a radio frequency (RF) CLAIMS 1. A method for fabricating a living implantable electrode that selectively delivers electrical stimulation, the method comprising: forming a support in a wire; Growing an nanostructure from the support to form an electrode tip; Covering the electrode tip and the support with a transparent conductive film; Forming an insulating protective film on the support portion; And connecting a power supply unit capable of transmitting and receiving power to the support unit and each frequency using wireless communication.

In addition, the step of forming the electrode tip, physical growth method comprising at least one of a sputtering method, ALD (Atomic Layered Deposition), PLD (Pulsed Laser Deposition), IBAD (Ion Beam Assisted Deposition) method from the support, Sol- It is preferable to grow the nanostructures directly by using a chemical growth method including at least one of a gel method, a chemical vapor deposition (CVD), a metal-organic chemical vapor deposition (MOCVD), and a vapor liquid solid epitaxial (VSLE) method. .

In addition, coating the electrode tip and the support with a transparent conductive film may include doping the electrode tip and the support with indium tin oxide (ITO), ZnO, and SnO 2, which are transparent conducting oxides. And Sputtering, ALD (Atomic Layered Deposition), PLD (Pulsed Laser Deposition) and IBAD (Ion Beam Assisted Deposition) methods for materials doped and co-doped with one or more combinations of Al, Ga, Zn, and F as substitution elements. It is preferable to form a thin film grown to a thickness of 1 to 1000 nm by using a physical growth method including at least one.

In addition, the step of forming an insulating protective film on the support portion, polystyrene resin, acrylonitrile / butadiene / styrene resin, acrylic resin, polycarbonate, polyphenylene oxide, vinyl chloride, soft polypropylene, glass reinforced fiber, poly It is preferably composed of an organic substance containing at least one of butylene terephthalate, phenol, and parylene resin, and applied at room temperature with a thickness of 1 to 1000 um to form an insulating protective film.

In addition, in order to improve the stability, it is preferable to perform the annealing process in each step at 50 to 500 ° C. for 1 second to 24 hours in one or more environments of vacuum, inert gas, oxidizing gas, and reducing gas.

According to the present invention, it is possible to induce a change in the function of the innately generated cerebral nerve to exhibit an excellent effect on improving brain nerve function.

In addition, the present invention has the advantage that can be inserted into the cerebral cortex by a minimal partial incision after local anesthesia by achieving a miniaturization than conventional brain stimulation electrodes.

Through this, the electrode according to the present invention can minimize the physical damage that can occur after surgery, by placing the electrode on the precise target site of the cerebral cortex has the advantage of giving the electrical stimulation according to each frequency at the minimum site It can minimize body damage.

In addition, the conventional brain stimulation electrode has a disadvantage that the area of the stimulus portion is increased by using a rod shape using a high elastic metal, but in the present invention, by replacing the electrode tip with a nano structure, it gives a stimulus at the correct location at the minimum area. It can be downsized.

In addition, the conventional brain stimulation electrode to transmit power using a wire, but the electrode according to the present invention can transmit power and frequency by wireless transmission and reception has the advantage of ease of action and portability excellent.

In addition, it is easy to remove the inserted electrode after the electrical stimulation treatment, there is an advantage that can be stimulated in a large area through the increase and decrease of the number of electrodes according to the frequency.

In addition, by producing a living implantable electrode according to each frequency there is an effect that can produce a living implantable electrode that can overcome the disorder of the brain function.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Repeated descriptions, well-known functions and configurations that may unnecessarily obscure the subject matter of the present invention, and detailed description of the configuration will be omitted. Embodiments of the present invention are provided to more completely describe the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity.

1 is an exemplary view showing the configuration of the RF-based selective functional bio-implantable brain stimulation electrode according to an embodiment of the present invention, Figure 2 is an exemplary view showing a practical use example of the electrode of FIG.

1 and 2, the RF-based selective functional implantable brain stimulation electrode 100 according to a preferred embodiment of the present invention is an electrode tip (10) of the nanostructures, the tip of the electrode tip (10) A support 20 for supporting the nanostructure and transmitting power to the electrode tip 10 (Tip), a transparent coating on the electrode tip 10 and the support 20 to transfer power to the electrode tip 10 (Tip) The coating part 30 and the support part 20 including at least one of the insulating protective film 32 coated to insulate the conductive film 31 and the support part 20 against the external environment from the outside with the electrode tip 10 through the support part 20. And a power supply unit 40 for selectively classifying and supplying magnetic poles according to the power supplied to the radio and the frequency of the radio signal.

The power supply device 200 that provides external power to the power supply unit 40 outputs power and radio frequency signals in a non-contact manner. The power supply device 200 is to drive the power supply unit 40 by transmitting power wirelessly. Since the external power supply device 200 is well known, a detailed description thereof will be omitted.

The power supply unit 40 substantially drives the electrode 100 according to the present invention and performs wireless communication with the external power supply device 200 to receive a power and frequency signal. For example, the power supply unit 40 is to receive a radio signal, such as a microwave from the external power supply device 200 to convert to power. This allows power to be supplied without a separate electrical connection.

In addition, the power supply unit 40 preferably receives external power wirelessly through Bluetooth or Zigbee communication. Thus, the power supply unit 40 is operated by a power source transmitted in a non-contact manner from the external power supply device 200, the electrode tip 10 is electrically stimulated to the cerebral cortex selectively according to the radio frequency signal transmitted together (RF: Radio frequency).

In addition, the power supply unit 40 preferably includes a recording medium that is programmed in a frequency division multiple communication scheme so that the effective band of the transmission medium is divided into frequency domains at regular intervals, and each region is allocated and used for each channel. Thus, the power supply unit 40 has an optional function of adjusting the intensity of the stimulus according to the divided frequency, and has the advantage of accommodating hundreds of lines in one electrode, thereby minimizing the living body by implanting one electrode at the exact stimulus point. It has the effect of giving selective, functional stimulation to the site.

Here, the frequency of the signal transmitted to the power supply unit 40 through an external power source preferably has a range of 1 kHz to 9999 GHz. Thus, the power supply unit 40 transmits electrical stimulation to the electrode tip 10 through the support 20 according to the frequency of the radio signal, thereby applying electrical stimulation to the cerebral cortex where the electrode tip 10 is located. .

The electrode tip 10 (Tip) is configured to apply a stimulus directly in accordance with the radio frequency selected in the cerebral cortex. At this time, the electrode tip 10 is applied directly to the cerebral cortex according to the function. The electrode tip 10 is composed of at least one of nanorod, nanowire, nanotube and nanobelt having a length of 1 nm to 1000 um and a thickness of 1 nm to 1000 um. It is preferable. The nanostructure constituting the electrode tip 10 may be fully understood by those skilled in the art, and thus detailed description thereof will be omitted.

Here, the electrode tip 10 (Tip) is composed of a biocompatible material, the electrode tip 10 is a carbon nanotube (CNT: Carbon Nanotub), Ti, V, Cr, Zn, Y, Zr, Nb, W Transition metals based on one or more combinations thereof, semimetals based on one or more combinations of Si, Ge, As, platinum group based on one or more combinations of Ru, Rd, Pd, Os, Ir, Pt, Ag, Au, Of precious metal group, metal oxide based on one or more combinations of Pt (MxOy, M = Ti, V, Cr, Zn, Y, Zr, Nb, W of transition metal containing one or more combinations of, Si, Ge, As Semimetals containing one or more combinations, platinum groups based on one or more combinations of Ru, Rd, Pd, Os, Ir, Pt, precious metals containing one or more combinations of Ag, Au, Pt, O = Oxygen, x And y is a quantitative ratio of metal and oxygen).

The support 20 supports the nanostructure of the electrode tip 10 and delivers power to the electrode tip 10 (Tip). The support 20 is a transition metal system including a combination of any one of Ti, V, Cr, Zn, Y, Zr, Nb, W made of 1 to 100 mm in length and 1 to 1000 um in thickness, Ru, Rd It is preferable to include a wire formed of at least one of a platinum group system including a combination of one or more of Pd, Os, Ir, and Pt, and a precious metal group system including one or more combinations of Ag, Au, and Pt.

The insulating protective film 32 of the coating part 30 insulates the support part 20 from electrical contact with the living body. The insulating protective film 32 is made of polystyrene resin, acrylonitrile / butadiene / styrene resin, acrylic resin, polycarbonate, polyphenylene oxide, vinyl chloride, soft polypropylene, glass reinforced fiber, polybutylene terephthalate, phenol, paryl It is composed of an organic material containing at least one of the lene resin, it is applied to the support portion 20 at room temperature with a thickness of 1 ~ 1000um to form an insulating coating.

The transparent conductive film 31 of the coating part 30 facilitates the transfer of electrical strength according to frequency between the electrode tip 10 and the support part 20. The transparent conductive film 31 is doped and co-coated with a combination of at least one of Al, Ga, Zn, and F as a doping and substitution element for ITO (ZnO, SnO2), which is a transparent conducting oxide (ITO), ZnO, and SnO2. Thin films of 1 to 1000 nm thickness were formed by physical growth methods including one or more of sputtering, atomic layered deposition (ALD), pulsed laser deposition (PLD), and ion beam assisted deposition (IBAD). It is formed by growing on the electrode tip 10 and the support 20. Since the contents of the transparent conductive film 31 can be fully understood by those skilled in the art, detailed descriptions thereof will be omitted.

As described above, the electrode 200 according to the present invention, as shown in FIG. 2, selectively provides electrical stimulation adjusted according to frequency to the local cerebral cortex, thereby causing cranial nerve function defects after brain injury due to various causes. Can promote recovery. In addition, the electrode 200 can be inserted into the space between the skull and the cerebral cortex with only a minimal partial incision due to the miniaturized size, and after placing the electrode in the cerebral cortex of the area of the nerve injury, according to the frequency An electric field can be formed to selectively stimulate electrical stimulation. In addition, it is easy to remove the inserted electrode after the electrical stimulation treatment.

Hereinafter, a method of fabricating the RF-based selective functional bio implantable brain stimulation electrode having the above-described configuration will be described.

Figure 3 is a flow chart illustrating a method for manufacturing a RF-based selective functional bio implantable brain stimulation electrode according to the present invention, Figures 4 to 8 is an exemplary diagram of each step according to an embodiment of the present invention.

First, referring to FIG. 3, the support 20 of the electrode tip 10 is manufactured (S10). As shown in FIG. 4, the support 20 is one of transition metals including at least one of Ti, V, Cr, Zn, Y, Zr, Nb, and W, Ru, Rd, Pd, Os, Ir, and Pt. Wire drawing made of platinum group containing the above and precious metal group containing at least one of Ag, Au, and Pt is drawn to produce 1 to 100 mm in length and 1 to 1000 um in thickness.

Next, the electrode tip 10 is formed of a nanostructure (S20). As shown in FIG. 5, the electrode tip 10 includes at least one of a sputtering method, an atomic layered deposition (ALD), a pulsed laser deposition (PLD), and an ion beam assisted deposition (IBAD) method in the support 20. Directly using the chemical growth method including at least one of physical growth method, Sol-Gel method, Chemical Vapor Deposition (CVD), Metal-Organic Chemical Vapor Deposition (MOCVD), and Vapor Liquid Solid Epitaxial (VSLE) method Grow your structure. How to grow such a nanostructure is a matter that can be fully understood by those of ordinary skill in the art will not be described in detail.

Here, the electrode tip 10 formed is a transition metal-based, Si, Ge, As containing at least one combination of carbon nanotubes (CNT: Carbon Nanotub), Ti, V, Cr, Zn, Y, Zr, Nb, W Semi-metal based, including a combination of one or more of, Platinum group, including a combination of one or more of Ru, Rd, Pd, Os, Ir, Pt, Precious metal, including a combination of one or more of Ag, Au, Pt, Metal oxide-based ( MxOy, M = Ti, V, Cr, Zn, Y, Zr, Nb, Transition metals containing a combination of one or more of them, Si, Ge, As semimetals containing a combination of one or more of, Ru, Rd, Pd, Platinum group containing at least one combination of Os, Ir, Pt, precious metal group containing at least one combination of Ag, Au, Pt, O = Oxygen, x and y is a quantitative ratio of metal and oxygen) Biomaterials with ingredients are grown as materials. The electrode tip 10 includes at least one of nanorods, nanowires, nanotubes, and nanobelts having a length of 1 nm to 1000 um and a thickness of 1 nm to 1000 um. It will be formed into a nanostructure.

In addition, the electrode tip 10 stabilizes the electrode tip 10 to the support part 20 by annealing at 50 to 1000 ° C. for 1 second to 24 hours in one or more environments of vacuum, inert gas, oxidizing gas, and reducing gas. It is desirable to have a constant composition ratio.

Proceeding the process of forming the electrode tip 10 as described above it is possible to easily produce the electrode tip 10 having a nanostructure having a uniform size and shape on the support portion 20 than the existing manufacturing method, and reproducibility and uniformity This is guaranteed and has the advantage of being capable of mass production.

Next, the electrode tip 10 (Tip) and the support 20 is coated with a transparent conductive film 31 (S30). As shown in FIG. 6, the electrode tip 10 and the support 20 are made of indium tin oxide (ITO), which is a transparent electrode (transparent conducting oxide) in order to smoothly transfer electrical strength according to frequency. Sputtering of ZnO, SnO2 and materials doped and co-doped with one or more combinations of Al, Ga, Zn, and F as doping and substitution elements, ALD (Atomic Layered Deposition), PLD (Pulsed Laser Deposition), IBAD The thin film is grown to a thickness of 1 to 1000 nm by using a physical growth method including at least one of (Ion Beam Assisted Deposition). Since a method of growing such a thin film is well known, a detailed description thereof will be omitted.

Here, to stabilize the grown thin film, it is desirable to have a stable and constant composition ratio by performing an annealing process of 50 to 1000 ° C. for 1 second to 24 hours in one or more environments of vacuum, inert gas, oxidizing gas and reducing gas. Do.

By proceeding such a process, a transparent electrode film having a uniform size and shape is formed on the support part 20 and the electrode tip 10, so that the selective stimulation according to the frequency can be quickly and easily transmitted in the existing electrode manufacturing method, and the reproducibility and Uniformity is guaranteed and mass production is possible.

Subsequently, an insulating protective film 32 is coated to insulate the support 20 of the electrode tip 10 from electrical contact with the living body (S40). As shown in FIG. 7, the insulating protective film 32 is made of polystyrene resin, acrylonitrile / butadiene / styrene resin, acrylic resin, polycarbonate, polyphenylene oxide, vinyl chloride, soft polypropylene, glass reinforced fiber, poly It consists of an organic substance containing at least one of butylene terephthalate, phenol, and parylene resin, and is applied in a room temperature column with a thickness of 1 to 1000 um to form an insulating protective film (32).

In addition, the insulating protective film 32 is preferably annealed at 50 to 500 ° C. for 1 second to 24 hours in an environment containing at least one of an inert gas, an oxidizing gas, and a reducing gas in order to obtain stability and smooth surface characteristics. Do.

Finally, the support unit 20 is connected to a power supply unit 40 capable of transmitting and receiving power and frequency using wireless communication (S50). As shown in FIG. 8, the power supply unit 40 divides the frequency bands of the effective band of the transmission medium at regular intervals, and allocates the recording medium programmed in the frequency division multiplexing scheme to allocate and use each area for each channel. Include.

This process provides an optional function to adjust the intensity of the stimulus according to the divided frequency, and has the advantage of accommodating hundreds of lines on one electrode. It has the effect of giving selective and functional stimulus.

In addition, the embodiment of the present invention described above has the same reproducibility, excellent electrical characteristics by a continuous manufacturing process consisting of steps S10 ~ S50 step, and a living body that selectively transmits electrical stimulation using a radio frequency (RF) The implantable electrode 100 can be easily produced.

In addition, as a step for forming the coating unit 30 described above, steps S30 to S40 may be selectively changed or deleted depending on the situation.

As mentioned above, although one preferred embodiment of the present invention has been illustrated and described, the present invention is not limited to the specific embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications may be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.

1 is an exemplary view showing the configuration of an RF-based selective functional bio-implantable brain stimulation electrode according to an embodiment of the present invention.

2 is an exemplary view showing a practical use example of the electrode of FIG.

Figure 3 is a flow chart illustrating a method of manufacturing a RF-based selective functional bio implantable brain stimulation electrode according to the present invention.

4 to 8 are diagrams illustrating each step according to an embodiment of the present invention.

* Description of the main parts of the drawings *

10: electrode tip 20: support

30 coating part 31 transparent conductive film

32: insulating protective film 40: power supply

100 electrode 200 power device

Claims (12)

In a living implantable electrode, An electrode tip made of a nano structure; A support for supporting the nanostructure of the electrode tip and transmitting power; A coating part including at least one of a transparent conductive film coated on the electrode tip and the support part to transmit power to the electrode tip and an insulating protective film coated to insulate the support part from an external environment; And RF-based selective functional bio-implantable brain stimulation electrode, characterized in that it comprises a power supply for selectively classifying and transmitting the stimulation according to the frequency of the power and the wireless signal supplied from the outside to the electrode tip through the support. The method according to claim 1, The frequency of the radio signal received by the power supply unit includes a range of 1 kHz to 9999 GHz, and operates according to the corresponding frequency of the radio signal to deliver an electrical stimulus to the cerebral cortex through an electrode tip. Functional living implantable brain stimulation electrode. The method according to claim 1, The power supply unit, RF-based selective functional bio-implantable brain stimulation electrode, characterized in that receiving external power wirelessly via Bluetooth or ZigBee communication. The method according to claim 1, The electrode tip (Tip), RF-based selective characterized in that it comprises at least one of nanorod, nanowire, nanotube and nanobelt having a length of 1 nm to 1000 um, thickness of 1 nm to 1000 um Functional living implantable brain stimulation electrode. The method according to claim 1, The electrode tip (Tip), Carbon nanotubes (CNT: Carbon Nanotub), transition metals including one or more combinations of Ti, V, Cr, Zn, Y, Zr, Nb, W, semi-metal based, including one or more combinations of Si, Ge, As, Platinum group based on one or more combinations of Ru, Rd, Pd, Os, Ir, Pt, precious metal group and metal oxide based on one or more combinations of Ag, Au, Pt (MxOy, M = Ti, V, Cr, A combination of one or more of transition metals including one or more combinations of Zn, Y, Zr, Nb, W, semimetals including one or more combinations of Si, Ge, As, Ru, Rd, Pd, Os, Ir, Pt One or more combinations of precious metal groups including one or more combinations of platinum group, Ag, Au, and Pt, O = Oxygen, x and y are nanostructures comprising one or more of RF-based selective functional living implantable brain stimulation electrode. The method according to claim 1, The support portion, Of transition metals including Ti, V, Cr, Zn, Y, Zr, Nb, W made of 1 to 100 mm in length and 1 to 1000 um in thickness, among Ru, Rd, Pd, Os, Ir, Pt An RF-based selective functional bio-implantable brain stimulation electrode comprising a wire formed of at least one of a platinum group, including one or more combinations, and a precious metal group, including one or more combinations of Ag, Au, and Pt. The method according to claim 1, The insulating protective film of the coating portion, At least one of polystyrene resin, acrylonitrile / butadiene / styrene resin, acrylic resin, polycarbonate, polyphenylene oxide, vinyl chloride, soft polypropylene, glass reinforced fiber, polybutylene terephthalate, phenol, parylene resin RF-based selective functional bio-implantable brain stimulation electrode, characterized in that consisting of an organic material, comprising a thickness of 1 ~ 1000 um. As a method of manufacturing a living implantable electrode that is inserted into the space between the skull and the cerebral cortex to selectively transmit electrical stimulation using radio frequency (RF), Forming a support from a wire; Growing an nanostructure from the support to form an electrode tip; Covering the electrode tip and the support with a transparent conductive film; Forming an insulating protective film on the support portion; And RF-based selective functional bio-implantable brain stimulation electrode manufacturing method comprising the step of connecting the power source and the power unit capable of transmitting and receiving each of the frequencies using the wireless communication to the support. The method according to claim 8, Forming the electrode tip, Physical growth method including at least one of the sputtering method, atomic layered deposition (ALD), pulsed laser deposition (PLD), ion beam assisted deposition (IBAD) method, the Sol-Gel method, the chemical vapor deposition (CVD) from the support portion RF-based selective functional bio-implantable brains, characterized in that the nanostructures are grown directly using a chemical growth method including one or more of metal-organic chemical vapor deposition (MOCVD) and vapor liquid solid epitaxial (VSLE) methods. Method of making a stimulation electrode. The method according to claim 8, Covering the electrode tip and the support with a transparent conductive film, The electrode tip and the support part are doped with at least one of Al, Ga, Zn, and F as a doping and substitution element in ITO (Indium Tin Oxide), ZnO, SnO 2, which are transparent conducting oxides, and the system. Co-doping material is 1 ~ 1000 nm thick using physical growth method including one or more of Sputtering method, Atomic Layered Deposition (ALD), Pulsed Laser Deposition (PLD), and Ion Beam Assisted Deposition (IBAD) method. RF-based selective functional bio-implantable brain stimulation electrode manufacturing method characterized in that formed into a grown thin film. The method according to claim 8, Forming an insulating protective film on the support portion, In the support portion, polystyrene resin, acrylonitrile / butadiene / styrene resin, acrylic resin, polycarbonate, polyphenylene oxide, vinyl chloride, soft polypropylene, glass reinforced fiber, polybutylene terephthalate, phenol, parylene resin RF-based selective functional bio-implantable brain stimulation electrode manufacturing method comprising an organic material comprising at least one, and the insulating protective film is formed by applying in a 1 ~ 1000 um thickness at room temperature. The method according to any one of claims 8 to 11, RF-based selective functional implantation, characterized in that the step of annealing at 50 to 500 ℃ for 1 second to 24 hours in one or more environments of vacuum, inert gas, oxidizing gas, reducing gas to further improve stability Method for manufacturing type brain stimulation electrode.

Images