KR20070112733A - Method of nanostructure assembly and alignment through self-assembly method and their application method - Google Patents

Abstract

A method for aligning nanostructures, such as nanowires, by using a self-assemblage process is provided to allow mass production of nanowires of which surface comprises an oxide, and to realize various surface nanostructures. A method for aligning nanowires of which surface comprises an oxide comprises the steps of: patterning a molecular membrane having the opposite charge to an oxide on the surface of a solid; dipping the patterned solid into a solution in which nanowires are dissolved; allowing the nanowires to be adsorbed onto a region where the molecular membrane is not patterned; and dissolving and removing the molecular membrane. The molecular membrane comprises at least one hydrophobic molecule selected from octadecytrichlorosilane(OTS), octadecyltrimethoxysilane(OTMS) and octadecytriethoxysilane(OTE).

Description

Method of nanostructure assembly and alignment through self-assembly method and their application method}

1 is an explanatory diagram schematically showing a method of aligning carbon nanotubes using a linker molecule according to the prior art.

Figure 2 is an explanatory view schematically showing how to align the carbon nanotubes using a semi-adsorbent molecular film pattern according to the prior art.

3 is an explanatory view showing a method of self-assembling a nanowire surface is an oxide according to the present invention.

4 is an exemplary view schematically showing the alignment of zinc oxide nanowires in a large area.

5 is an exemplary view schematically showing zinc oxide nanowires assembled on various solid surfaces.

6 is an exemplary view schematically showing an integrated circuit using zinc oxide nanowires.

FIG. 7 is an exemplary view schematically showing patterning of nanostructures using a closed cell method. FIG.

8 is an explanatory diagram showing self-assembly of various nanowires using a closed cell method.

9 is an explanatory diagram showing the self-assembly difference between nanostructures of a uniform molecular film pattern having no density gradient and a molecular film pattern having a density gradient.

10 is an explanatory diagram showing a molecular film giving a lens effect caused by a micro contact printing method;

FIG. 11 is an explanatory diagram showing self-assembly of nanowires in a molecular film having a uniform molecular film and a slope; FIG.

12 is an exemplary view schematically showing an elliptic molecular film pattern.

13 shows the aligned nanostructures. An explanatory diagram schematically showing a technique used as a mask.

14 is an explanatory diagram showing an alignment of vanadium oxide nanowires and an Au nanowire circuit.

15 is an explanatory diagram showing a real-time chemical molecular sensor using the I-V curve and nanowires of Au nanowires.

Fig. 16 is a graph showing the change in the resistance of hydrogen and the concentration of hydrogen gas in the Pd nanowires;

17 is a schematic illustration of various sensors using metal nanowires.

The present invention relates to an alignment technique of nanostructures using self-assembly and an application method thereof. More specifically, the present invention uses a nanowire alignment and circuit fabrication technique, nanostructure patterning technique using a closed cell, circuit size reduction technique using a molecular film having a gradient of density, and a nanostructure mask. A circuit fabrication technique and its application.

Adsorbing and aligning the existing nanowires according to the prior art include a method of aligning carbon nanotubes using a linker molecule, and a method of aligning carbon nanotubes using a semi-adsorbable molecular membrane pattern.

1 is an explanatory view schematically showing a method of aligning carbon nanotubes using a linker molecule according to the prior art. As shown in the figure, the linker molecule is used to pattern two different molecular membranes on a solid surface, and to adsorb carbon nanotubes at specific positions using different degrees of adsorption on each molecular membrane of the carbon nanotubes. This is how you do it.

FIG. 2 is an explanatory view schematically showing a method of aligning carbon nanotubes using a semi-adsorbable molecular film pattern according to the prior art. As shown in the figure, the method using the semi-adsorbable molecular membrane pattern utilizes the natural adsorption force of all solid surfaces. As a result, the basic process is first covered with a semi-adsorbent molecular membrane having a very low adsorption rate of carbon nanotubes on the remaining portions, except for the positions where carbon nanotubes are attached to the solid surface. When the sample subjected to molecular film patterning is placed in a carbon nanotube solution, the carbon nanotubes are adsorbed on a solid surface not covered with a semi-adsorbable molecular film and aligned in a pattern shape.

 This conventional technique is applied only to carbon nanotubes whose surface is not oxide, and is difficult to apply to nanostructures on the surface, and it is impossible to align nanostructures in a relatively large pattern, and use the aligned nanostructures as masks. Did not do it.

The present invention is to solve the above problems, an object of the present invention is to provide a circuit that can be aligned using a self-assembly with respect to the nanowire surface is an oxide.

Another object of the present invention is to pattern nanostructures on the surface, to align nanostructures with nanometer size resolution in a micrometer size pattern, and to align using a self-assembly method in which the aligned nanostructures can be used as a mask. It is to provide a method.

Also, by aligning the nanowires with oxides on the surface, the nanowires with oxides on the surface were also aligned using self-assembly to make the circuit. Then, the nanostructures on the surface are patterned onto another surface using a closed cell method. In addition, we aim to align nanostructures with nanometer resolution in micrometer size patterns using molecular films with gradients of density. By using self-assembled nanostructures as a mask directly at surface milling, they make metal wire circuits and use them to create real-time chemical molecular sensors.

TECHNICAL FIELD The present invention relates to a nanostructure alignment technology using self-assembly and its application, and to an alignment and circuit fabrication technology of nanowires having an oxide surface, a nanostructure patterning technology using a closed cell, a circuit using a molecular film having a gradient of density. Size reduction techniques, and circuit fabrication techniques and applications using nanostructured masks.

Hereinafter, the alignment technology of nanostructures using the self-assembly according to the present invention and its application will be described in detail.

First, the general alignment process of nanowires whose surface is an oxide is described.

3 is an explanatory diagram schematically showing a method of self-assembling a nanowire whose surface is an oxide. As shown in the figure, two molecular film patterning methods, such as "linker molecular film patterning" and "semi-adsorbable molecular film patterning", may be used to self-assemble nanowires having an oxide on a solid substrate.

Since the oxide has a charge, the nanowire whose surface is an oxide does not self-assemble in the hydrophobic molecular film, but self-assembles in the hydrophilic molecular film or solid surface having a charge opposite to that of the oxide.

In addition, nanowires with an oxide surface can be aligned to any solid substrate capable of molecular film patterning. Monolayers can be patterned by microcontact printing, photolithography, etc., and molecular film patterning methods using photolithography are very important because of compatibility with existing semiconductor processes.

Looking at the specific process of the molecular film patterning method using the photolithography as follows.

First, a photoresist is patterned by the photolithography method. When the molecules for patterning are put in a solution in which the molecules are dissolved, the molecules may be adsorbed only to the sites where the photoresist is not attached, thereby patterning the molecular membrane. The molecules should be dissolved in a solvent that does not dissolve the photoresist.

In order to align nanowires with oxides on the oxide surface (SiO ₂ , Glass, most metal surfaces, etc.), molecules such as Octadecytrichlorosilane (OTS), Octadecyltrimethoxysilane (OTMS), and Octadecytriethoxysilane (OTE), which are one of the hydrophobic molecules, are used. use. If the photoresist is melted and removed (e.g., AZ-based photoresist is removed with Acetone), a molecular film pattern can be obtained.

Next, the alignment of the zinc oxide nanowires will be described in detail.

The zinc oxide nanowires are themselves metal oxides and oxides on their surface. In addition, since zinc oxide nanowires are much larger than carbon nanotubes, a monolayer pattern is required for accurate alignment.

4 is an explanatory view schematically showing the alignment of zinc oxide nanowires in a large area. As shown in the figure, nanowire alignment technology can be used to align a large amount of zinc oxide nanowires in a desired unit at the same time.

In addition, the zinc oxide nanowire solution may be prepared by dispersing the zinc oxide nanowires in a solvent by placing the substrates in which the zinc oxide nanowires are grown in a solvent in which the zinc oxide nanowires are well dispersed and placing them in a ultrasonic cleaner for several minutes.

When preparing a zinc oxide nanowire solution, DI water, ethanol, methanol, etc. can be used as a solvent, the concentration can be adjusted to the area of the zinc oxide substrate to be put. The proper concentration required to align zinc oxide on a large area substrate is 10 ⁸ pieces / ml, and the dispersion time in the ultrasonic cleaner is 1 minute to 10 minutes.

After making the zinc oxide nanowire solution, the solid film patterned solid substrate is immersed in the zinc oxide nanowire solution for about 5 minutes, and the zinc oxide nanowire self-assembles to the negatively charged surface due to the positive charge caused by the lack of oxygen molecules. .

In addition, when aligning the zinc oxide nanowires on an oxide surface such as SiO ₂ , OTMS molecules are used because a monomolecular molecular film is required. In this case, anhydrous toluene is used as a solvent and normal butylamine (n-BuNH ₂ ) is used as a catalyst.

5 is an explanatory diagram schematically showing zinc oxide nanowires assembled using an alignment technique according to the present invention on various solid surfaces. As shown in the figure, solid substrates capable of aligning the currently identified zinc oxide nanowires are Au and SiO ₂ . In the case of using the linker molecular film patterning technique, since the positive charge is generated by the zinc oxide of the zinc oxide nanowires and the oxygen molecules generated in the oxygen lattice structure, the negatively charged molecule is used as the linker molecular film.

Examples of the molecules that can be used include 16-mercaptohexadecanoic acid (MHA), and if a semi-adsorbent molecular membrane patterning technique is used, the hydrophobic molecular membrane can be used to apply zinc oxide nanowires to various types of solid surfaces.

Next, a nanowire whose surface is self-assembleable is an oxide is described.

Although the material itself is not an oxide such as zinc oxide, most materials are exposed to air to form an oxide film on the surface. Since self-assembly is the interaction between the surface of the patterned substrate and the surface of the nanowire, the surface properties are important. Therefore, even if the material is not an oxide, self-assembly can be used if an oxide film is formed on the surface.

In addition, examples of nanowires having an oxide surface include germanium nanowires (Ge nanowire), indium oxide (In2O3), zinc oxide nanowires (ZnO nanowires), silicon nanowires, gallium nitride nanowires (GaN nanowires), and the like. There is this.

Next, an integrated circuit fabrication technique using a nanowire whose surface is an oxide is described.

6 is an explanatory diagram showing an integrated circuit using zinc oxide nanowires. By adding a two-step process to an existing semiconductor process, it is possible to use nanowires with oxides as part of the existing semiconductor circuits.

First, the molecular film is patterned on a desired solid surface by photolithography, and then the nanowires whose surface is an oxide are adsorbed and aligned at specific positions. At this time, since the conventional semiconductor patterning technology uses the photolithography method for molecular film patterning, it is possible to produce a nanowire integrated circuit having an oxide surface without changing the existing semiconductor lines.

In order to manufacture a complex integrated circuit, an integrated device including nanowires having an oxide surface may be manufactured by performing a conventional semiconductor process before or after assembling nanowires having an oxide surface. The semiconductor process which may be carried out before or after the process includes, for example, etching, vapor deposition, photolithography, oxide deposition, and the like.

In addition, using the above process, integrated circuit components such as interconnectors, transistor channels, oxygen sensors, and UV sensors are manufactured using nanowires having an oxide surface. Can be used. And a device made by such a technique is an integrated circuit using zinc oxide nanowires.

Hereinafter, a nanostructure patterning technique using a closed cell according to the present invention will be described.

First, the concept of nanostructure patterning by the closed cell method will be described.

7 is an explanatory diagram schematically showing patterning of nanostructures using a closed cell method. As shown in the figure, the closed cell method refers to transferring two surfaces having different affinity with the nanostructure like a sandwich to transfer the nanostructure on one surface to the other surface.

Therefore, the closed cell method can be applied to all surfaces to which nanostructures can be attached, and can be applied in various ways (eg, heat injection method, ultrasound, etc.) to suit different interaction characteristics between various surfaces and various nanostructures. Vibration Method) Nanostructures can be patterned on surfaces by transferring nanostructures from one surface to another.

In addition, since the closed cell method overlaps two surfaces like sandwiches, the nanostructure on one surface can be transferred to another without loss. In particular, patterned surfaces, which are molecular membranes, can be used to align nanostructures simultaneously with the transition of nanostructures. And because many nanostructures grow on surfaces, this technique makes it easy to pattern nanostructures created on one surface to another.

Next, the self-assembly process of a nanowire using the closed cell method is described.

8 is an explanatory diagram showing self-assembly of various nanowires using the closed cell method.

The closed cell method can be applied to the self-assembly of nanostructures on the surface where most nanostructures have grown and the surface where most nanostructures are attached, and as shown in FIG. In the case of nanostructures where zinc oxide nanowires are attached to the surface, carbon nanotubes are self-assembled onto the patterned substrate via the closed cell method.

The basic process will be described below.

First, patterning is carried out with a molecular film (hydrophilic molecular film) to which nanostructures adhere to a solid surface and a molecular film (hydrophobic molecular film) to which nanostructures do not adhere.

Then, a substrate with nanostructures is prepared. At this time, all substrates in which the nanostructures are grown and all substrates to which the nanostructures can be attached are available.

Next, create a small space between the solid substrate patterned with the molecular film and the substrate with nanostructures, inject a solution in which the nanostructures can be dispersed into an empty space, and then place the two substrates with a small space therebetween. After overlapping, fix it.

After fixing the two substrates with a small space therebetween, the nanostructures on the substrate with the nanostructures are transferred to the patterned solid substrate. At this time, the method of transferring may include the case of applying ultrasonic vibration and the case of applying high heat. The nanostructures are then aligned along the pattern on the patterned solid substrate as it transitions through the solution in a small space.

Substrates grown with nanostructures include SiO ₂ , ITO, Si, and sapphire. Substrates to which nanostructures can be attached include metal plates (Au, Cu, Al, etc.), SiO ₂ , Si, and PDMS stamps.

The closed cell method allows the alignment of nanostructures on one substrate on which the nanostructures are grown or on one solid substrate on which the nanostructures are attached so that a relatively small number of nanostructures can be aligned. It is efficient because it can pattern nanostructures in large areas.

In the case of a substrate in which nanostructures are grown, a thin plate (for example, a Teflon plate) with a hole in the center is placed in the center, and a solution in which nanostructures are dispersible is injected into an empty space, and the three plates are overlapped and fixed.

After immersing the three fixed plates in the previously used solution and leaving them for a few minutes in the ultrasonic cleaner, the nanostructures on the substrate are separated and trapped in the closed cell.

When three immobilized substrates are placed for several minutes to several hours, the nanostructures in the closed cell self-assemble to the molecular patterned substrate.

In the case of substrates with nanostructures attached, a mask is placed in the center (eg aluminum foil) before the nanostructures are attached and a material is deposited on it to give a void (eg metal evaporator, metal sputter, etc.).

Thereafter, space is formed on the slope at the edge. After attaching the nanostructures to the spaced substrate, and injecting a solution dispersable nanostructures between the patterned substrate and the two substrates are bonded.

The two fixed plates are immersed in the previously used solution and left for a few minutes in an ultrasonic cleaner to trap the nanostructures on the substrate and trap them in the closed cell.

Leaving two immobilized substrates for a few minutes to several hours, the nanostructures in the closed cell self-assemble to the molecular patterned substrate.

Hereinafter, a circuit size reduction technique using a molecular film having a gradient of density according to the present invention will be described.

First, the concept of a technique using a molecular film pattern with a slope of density will be described. FIG. 9 is an explanatory diagram showing a difference between self-assembly of nanostructures in a uniform molecular film pattern having no density gradient and a molecular film pattern having a density gradient.

The technique using the molecular film pattern having the slope of the density is to self-assemble the nanostructure by using the slope of the density to give the molecular film pattern affinity for the surface of the molecular film of the nanostructure according to the slope. In general, the smaller the slope of the molecular film density, the higher the affinity for the nanostructure, so that in the molecular film with the slope of the density, the nanostructures are arranged in the center of the molecular film pattern. The technique uses nanometer-sized molecular patterning technology to enable nanostructured circuits with nanometer-sized resolution.

Next, a description will be given of a nanowire circuit size reduction technology process using a molecular film having a slope. 10 is an explanatory view showing a molecular film giving a lens effect produced by the microcontact printing method. The molecular film having a slope of density is determined by the dispersion of the molecular film.

In addition, when using a microcontact printing method, when a coating coated with a hydrophobic molecular solution is taken for a small time (about 8 seconds), a hydrophobic molecule buried in the embossed portion of the coating is imprinted onto a substrate to produce a uniform hydrophobic molecular film. However, if the coating time is relatively long (about 16 seconds), the hydrophobic molecules deposited on the edge of the embossed portion are dispersed, and as the distance from the embossed portion is removed, the hydrophobic molecular films having a low surface density are generated.

Subsequently, when the remaining portion of the substrate is filled with hydrophilic molecules, a uniform hydrophilic molecular film is formed on the substrate where a uniform hydrophobic molecular film is formed, and a hydrophilic molecular film having a surface slope is formed on the substrate where a molecular film having a surface density difference is formed. Is generated.

When the nanowires are self-assembled on the patterned substrate in this way, the nanowires are assembled with various orientations on the part where the uniform hydrophilic molecular film is formed, but the nanowires are formed on the part where the hydrophilic molecular film with the surface slope is formed. Being centered allows self-assembly with nanometer resolution.

The lens effect allows us to align nanowires with nanometer resolution in micrometer-sized patterns, creating nanometer-level circuits.

Currently identified circuits use vanadium oxide nanowires and carbon nanotubes.

Since vanadium oxide nanowires have negative charges, Octadecanethiol (ODT) is used as a hydrophobic molecular film on Au substrate, and cystamine which has positive charge is used as hydrophilic molecular film.

In the case of carbon nanotubes, since they adhere well to all polar molecular membranes, cystamine having a positive charge or MHA having a negative charge is used as a hydrophilic molecular membrane on an Au substrate, and ODT is used as a hydrophobic molecular membrane.

FIG. 11 is an explanatory diagram showing self-assembly of nanowires in a uniform molecular film and a gradient molecular film, and FIG. 12 is an explanatory diagram showing an example of an elliptic molecular film pattern.

Hereinafter, a circuit fabrication technique and application using a nanostructure mask according to the present invention will be described.

First, the concept of a technique of aligning a nanostructure mask and using it as a mask will be described.

13 shows the aligned nanostructures. It is explanatory drawing which showed the technique used as a mask.

The technique uses nanostructures aligned with molecular films patterned on the surface as a mask for beams that scrape off the surface. The technique allows the creation of nanoscale surface structures by using nanostructures as masks. The advantage of the present technology is that the nanostructures are used as masks, so the nanostructures can be arranged in various shapes to create various types of surface structures.

Next, a process for producing metal nanowires using a vanadium oxide (V ₂ O ₅ ) mask will be described. A metal thin film is deposited on a silicon wafer coated with SiO ₂ film. The hydrophilic and hydrophobic molecules are patterned so that the density of the metal thin film is gradient. Submerged substrates patterned with molecular gradients in a nanowire solution are immersed in the nanowire solution, and the nanowires are assembled in the center of the hydrophilic molecular membrane with nanometer-sized wire width.

And when the ion beam is shot onto the substrate where the nanowires are aligned, since the single molecular film pattern and the metal are removed by the ion beam, but the nanowires are not removed, the nanowires act as a mask so that the metal under the nanowires remains. A metal nanowire with a metric width is formed.

If you remove the remaining mask nanowires after shooting the ion beam, only the metal nanowires remain. It is clear that this technique can be applied to any metal thin film capable of molecular film patterning.

Currently identified metal thin films are Au and Pd, and nanowires that can be used as masks are vanadium oxide nanowires. The hydrophilic molecular membrane used for self-assembly of vanadium oxide nanowires into Au or Pd thin film is a positively charged cystamine and the hydrophobic molecular membrane is ODT.

If Ti is used as an adhesive layer when depositing an Au thin film, the nanowire substrate is immersed in dilute hydrofluoric acid solution (1% HF) for 30 seconds to remove Ti.

To remove the thiol group molecular film patterned on the Au or Pd thin film, the nanowire substrate may be baked at 150 to 170 degrees for 12 hours. After firing the ion beam, the substrate is washed with a buffer solution (1 M NaCl in water) for 10 minutes to completely remove the vanadium oxide nanowires and leave only the metal nanowires.

14 is an explanatory diagram showing the alignment of the vanadium oxide nanowires and the Au nanowire circuit.

Next, the application (application field) to a chemical molecular sensor is described.

15 is an explanatory diagram showing a real-time chemical molecular sensor using the I-V curve and nanowires of Au nanowires. As shown in the figure, metal lines of nanometer width can be used for real-time chemical molecular sensors. The chemical molecule available for the currently identified sensor is ODT. When the metal nanowires are immersed in a solution of ODT chemical molecules with thiols under voltage, the resistance changes. This is known because the thiol groups in the ODT bind to Au and carry charge.

Hereinafter, the application to the chemical gas sensor using the nanowire alignment method according to the present invention.

FIG. 16 shows the resistance change rate of the Pd nanowires according to the hydrogen gas concentration and the resistance change rate. As shown in the figure, Pd nanowires having a line width of nanowires can be used as a real-time gas sensor. In addition, currently confirmed sensing gas is hydrogen gas. When hydrogen gas is brought into contact with the nanowire while voltage is applied to both ends of the Pd nanowire, the resistance increases. Also, the higher the concentration of hydrogen gas, the greater the change in resistance. This is because the resistance changes when the Pd nanowires react with the hydrogen gas.

17 is a schematic illustration of various sensors using metal nanowires. As shown in the figure, it can be used as a sensor of various gases or chemical molecules using a general metal nanowire.

The present invention described above is not limited to the above-described embodiment and the accompanying drawings, and it is common in the field of the present invention that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.

According to the present invention, the alignment and circuit fabrication technology of nanowires having an oxide surface may self-assemble nanowires having oxide surfaces, and use them to make a large amount of nanowire circuits, and nanostructure patterning techniques using closed cells The nanostructures can be patterned by transferring the nanostructures on the surface to other surfaces with different nanostructure affinities, and the circuit size reduction technique using molecular films with gradients of density takes advantage of micrometer size by utilizing the difference in molecular membrane density. It is possible to construct a large number of nano-level nanostructure circuits in the pattern of, circuit fabrication techniques and applications using nanostructure masks can realize a variety of surface nanostructures by using the aligned nanostructures as a mask, general metal nanowires It can be used as a sensor of various gases or chemical molecules using.

Claims (11)

Patterning the molecular film with charge opposite to the oxide on the solid surface, The patterned solid is immersed in a solution of dissolved nanowires, The nanowires are adsorbed in the region where the molecular film is not patterned, Melting and removing the molecular membrane A method of aligning nanowires whose surface is an oxide using self-assembly. The method of claim 1, The molecular membrane is made by selecting one of hydrophobic molecules including Octadecytrichlorosilane (OTS), Octadecyltrimethoxysilane (OTMS), Octadecytriethoxysilane (OTE) A method of aligning nanowires whose surface is an oxide using self-assembly. Make zinc oxide nanowire solution, Dipping a solid substrate patterned molecular film in the zinc oxide nanowire solution, The zinc oxide nanowires self-assemble to the negatively charged surface due to the positive charge caused by the lack of oxygen molecules.  Alignment method of zinc oxide nanowires using self-assembly. The method of claim 3, The zinc oxide nanowire solution is The substrate in which the zinc oxide nanowires are grown is placed in a solvent in which the zinc oxide nanowires are well dispersed. Obtained by dispersing zinc oxide nanowires in a solvent in an ultrasonic cleaner Alignment method of zinc oxide nanowires using self-assembly. According to claim 4, The solvent for dispersing the zinc oxide nanowires is made by selecting one of D.I water, echanol, methanol, The necessary concentration for aligning zinc oxide to a large area substrate is 10 ⁸ pieces / ml, Dispersion time in the ultrasonic cleaner is 1 ~ 10 minutes Alignment method of zinc oxide nanowires using self-assembly. A method for manufacturing an integrated circuit using nanowires having an oxide surface as part of a semiconductor circuit, Pattern the molecular membrane onto the desired solid surface, Adsorbing and aligning the nanowire whose surface is an oxide at a predetermined position; Integrated circuit manufacturing method using nanowires whose surface is oxide. Patterning the molecular film to which the nanostructures are attached to the surface of the solid substrate and the molecular film to which the nanostructures are not attached, Arranged to form a closed space between the solid substrate and the substrate having nanostructures, Injecting a solution into which the nanostructures can be dispersed, Fixing the solid substrate and the substrate with nanostructures, The nanostructures are transferred to the pattern of the solid substrate from the substrate having the nanostructures Self-Assembly Method of Nanowires. According to claim 7, The substrate having the nanostructures is made by selecting one of SiO ₂ , ITO, Si, sapphire, The solid substrate is made by selecting one of Au, Cu, and a metal plate containing Al, SiO ₂ , Si, PDMS stamp Self-Assembly Method of Nanowires. According to claim 7, The transition of the nanostructure Made by selecting one of sound wave vibration and heating Self-Assembly Method of Nanowires. Patterning the molecular film having a slope on the surface of the solid substrate, Align the nanostructures in the pattern, The screw structure is aligned to the center Self-Assembly Method of Nanowires. A hydrophobic molecular film was formed by applying a hydrophobic molecular solution to a predetermined portion of the solid substrate for a predetermined time to form a hydrophobic molecular film. A hydrophilic molecular film is formed in a space other than the hydrophobic molecular film of the solid substrate, Assembling nanowires on the solid substrate Self-Assembly Method of Nanowires.

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