KR102518216B1 - Power module, manufacture method of power module and Vehicle having the same - Google Patents

Abstract

The power module of the present invention includes a first substrate on which a first semiconductor module for converting power is disposed and connected to a first DC terminal, a second substrate on which a second semiconductor module for converting power is disposed and connected to an AC terminal, and a third substrate to which the second DC terminal is connected, wherein the first to third substrates each include an upper conductive layer, an insulating layer, and a lower conductive layer, and the upper conductive layer of the second substrate is connected to the first substrate. is connected to the first semiconductor module, and the upper conductive layer of the third substrate is connected to the second semiconductor module of the second substrate.

Description

Power module, manufacture method of power module and vehicle having the same {Power module, manufacture method of power module and Vehicle having the same}

The present invention relates to a power module for converting power, a manufacturing method thereof, and a vehicle having the same.

In general, an electronic device may include a low power device that controls a small current by applying a low voltage and a power device that controls a large current by applying a high voltage.

A voltage of several volts is applied to the low-power device, and a current of micro-Ampere (uA) or milli-Ampere may flow.

For example, a voltage of about 5.0 [V] or about 3.3 [V] may be applied to the microprocessor, and a current of micro-Ampere (uA) or milli-Ampere may flow.

On the other hand, a voltage of tens to hundreds of volts is applied to an inverter as a power device, and a current of several to tens of amperes may flow. For example, a voltage of 220 [V] is applied to home appliances used at home, and a current of several amperes may flow. As another example, in the case of a vehicle, a vehicle battery outputs a voltage of approximately 12 [V], and a voltage of 12 [V] may be applied to an electronic device inside the vehicle.

As such, since a higher voltage is applied to the power device and a larger current flows to the power device than the low power device, the power device has a structure different from that of the low power device. For example, the power device may have a larger size than the low power device, and may include a heat dissipation device such as a special heat sink for heat dissipation.

One aspect of this, one aspect of the disclosed invention is to provide a power module that can reduce the size and unit cost of the power module.

A power module according to one aspect includes a first substrate on which a first semiconductor module for converting power is disposed and to which a first DC terminal is connected; a second substrate on which a second semiconductor module for converting power is disposed and an AC terminal is connected; and a third substrate to which the second DC terminal is connected, wherein the first to third substrates each include an upper conductive layer, an insulating layer, and a lower conductive layer, and the upper conductive layer of the second substrate is connected to the first substrate. is connected to the first semiconductor module, and the upper conductive layer of the third substrate is connected to the second semiconductor module of the second substrate.

The upper conductive layer of the second substrate may extend toward the first substrate to form an extension portion, and a lower portion of the extension portion may be attached to an upper portion of the first semiconductor module of the first substrate.

The first semiconductor module may include an upper bonding layer and a lower bonding layer, and a lower portion of the extension portion of the second substrate may be bonded to an upper portion of the upper bonding layer of the first semiconductor module.

The first substrate and the second substrate may be disposed side by side on the same plane, and an extension portion of the second substrate may extend upward by a height of the first semiconductor module and may extend toward the first semiconductor module to be connected to the first semiconductor module. .

The upper conductive layer of the third substrate may extend toward the second substrate to form an extension portion, and a lower portion of the extension portion may be attached to an upper portion of the second semiconductor module of the second substrate.

The second semiconductor module may include an upper bonding layer and a lower bonding layer, and a lower portion of the extension portion of the third substrate may be bonded to an upper portion of the upper bonding layer of the second semiconductor module.

The second substrate and the third substrate are disposed side by side on the same plane, and an extension portion of the third substrate extends upward as much as the height of the second semiconductor module and extends toward the second semiconductor module to be connected to the second semiconductor module. .

The first semiconductor module may include a first transistor and a first diode, and the second semiconductor module may include a second transistor and a second diode.

The upper conductive layers of the first to third substrates may be made of metal.

The insulating layer may be made of a ceramic material.

The upper conductive layer of the first substrate, the upper conductive layer of the second substrate, and the upper conductive layer of the third substrate may be spaced apart from each other with a gap therebetween.

An insulating member may be disposed in the gap.

The insulating layer of the first substrate, the insulating layer of the second substrate, and the insulating layer of the third substrate may form one layer.

The lower conductive layer of the first substrate, the lower conductive layer of the second substrate, and the lower conductive layer of the third substrate may form one layer.

A vehicle according to another aspect includes a rechargeable battery; A motor that rotates using battery power; A power module for converting power supplied from a battery to a motor, wherein the power module includes a first substrate on which a first semiconductor module for converting power is disposed and a first DC terminal is connected, and a second substrate for converting power. A second substrate on which the semiconductor module is disposed and connected to an AC terminal and a third substrate to which the second DC terminal is connected, wherein the first to third substrates each include an upper conductive layer, an insulating layer, and a lower conductive layer. The upper conductive layer of the second substrate is connected to the first semiconductor module of the first substrate, and the upper conductive layer of the third substrate is connected to the second semiconductor module of the second substrate.

The upper conductive layer of the second substrate may extend toward the first substrate to form an extension portion, and a lower portion of the extension portion may be attached to an upper portion of the first semiconductor module of the first substrate.

The upper conductive layer of the third substrate may extend toward the second substrate to form an extension portion, and a lower portion of the extension portion may be attached to an upper portion of the second semiconductor module of the second substrate.

The first semiconductor module may include a first transistor and a first diode, and the second semiconductor module may include a second transistor and a second diode.

The upper conductive layer of the first substrate, the upper conductive layer of the second substrate, and the upper conductive layer of the third substrate may be spaced apart from each other with a gap therebetween.

The vehicle may further include a generator generating power by rotation of wheels, and the power module may include converting the generated power into power for charging the battery.

According to one aspect of the disclosed invention, it is possible to reduce the size and cost of a power module.

1 is an exemplary exterior view of a body of a vehicle having a power module according to an embodiment.
FIG. 2 is an exemplary view of a chassis of the vehicle shown in FIG. 1 .
3 is an external view of a power module according to an embodiment.
FIG. 4 is an exemplary configuration diagram of an element unit shown in FIG. 3 .
5 is an exemplary layout view of an element unit of a power module.
6A and 6B are perspective views of a power module according to one embodiment.
FIG. 7 is a view showing an AA′ section of the power module shown in FIG. 6A.
FIG. 8 is a view showing a BB′ section of the power module shown in FIG. 6A.
FIG. 9 is a view showing a CC′ section of the power module shown in FIG. 6A.

Like reference numbers designate like elements throughout the specification. This specification does not describe all elements of the embodiments, and general content or overlapping content between the embodiments in the technical field to which the present invention belongs is omitted. The term 'unit, module, member, or block' used in the specification may be implemented as software or hardware, and according to embodiments, a plurality of 'units, modules, members, or blocks' may be implemented as one component, It is also possible that one 'part, module, member, block' includes a plurality of components.

Throughout the specification, when a part is said to be "connected" to another part, this includes not only the case of being directly connected but also the case of being indirectly connected, and indirect connection includes being connected through a wireless communication network. do.

In addition, when a certain component is said to "include", this means that it may further include other components without excluding other components unless otherwise stated.

Throughout the specification, when a member is said to be located “on” another member, this includes not only a case where a member is in contact with another member, but also a case where another member exists between the two members.

Terms such as first and second are used to distinguish one component from another, and the components are not limited by the aforementioned terms.

Expressions in the singular number include plural expressions unless the context clearly dictates otherwise.

Hereinafter, the working principle and embodiments of the present invention will be described with reference to the accompanying drawings.

1 is an exemplary view of the exterior of a vehicle body having a power module according to an embodiment, and FIG. 2 is an exemplary view of the chassis of the vehicle shown in FIG. 1 .

Here, an electric vehicle including a battery and a motor, which are chargeable power sources, rotates the motor with electricity accumulated in the battery, and drives wheels using the rotation of the motor, and includes an engine, battery, and motor, and includes mechanical power and motor of the engine. A hybrid vehicle that drives by controlling the electrical power of the vehicle, and a hydrogen fuel cell vehicle that reacts hydrogen and oxygen in the air, charges the battery using the electricity generated at this time, and rotates the motor using the power of the charged battery. It may be any one of the vehicles.

In this embodiment, a hybrid vehicle will be described as an example.

The vehicle 100 includes a body 110 and a chassis 120 on which mechanical devices necessary for driving are installed except for the body.

As shown in FIG. 1, the vehicle body 110 includes a front panel 111, a bonnet 112, a roof panel 113, a rear panel 114, front and rear doors 115, and front and rear doors 115. It includes a window glass 116 provided to be opened and closed.

In addition, the exterior of the vehicle body includes a pillar provided at the boundary between the window glasses of the front, rear, left and right doors, a side mirror that provides the driver with a view of the rear of the vehicle 100, and surrounding information while observing the front view, and other It includes a lamp 117 that performs signals and communication functions for vehicles and pedestrians.

The lamps may be provided on the front and rear surfaces of the exterior of the vehicle, and perform not only a lighting function, but also a signal and communication function for other vehicles and pedestrians.

As shown in FIG. 2, the chassis 120 of the vehicle is a frame supporting the body 110, and the driving force is applied to the front, rear, left, and right wheels 121 and the front, rear, left, and right wheels 121 respectively. Devices 122 to 129, a steering device, a braking device and a suspension device for applying braking force to the front, rear, left and right wheels 121 may be provided.

The power unit is a device that generates a driving force required for driving of a vehicle and adjusts the generated driving force, and may include a power generating device and a power transmission device.

The power generating device includes an engine 122, a fuel device (not shown), a cooling device (not shown), a fueling device (not shown), a battery 123, a motor 124, a generator 125, and a power converter 126 can include

The power transmission device may include at least one of a clutch 127, a transmission 128, a final reduction device, a differential device 129, and an axle.

The engine 122 generates mechanical power by burning petroleum fuel such as gasoline and diesel.

The battery 123 generates high-voltage current power and supplies the generated power to the motor 144 .

The battery 123 receives power supplied from the generator 125 and performs charging.

The motor 124 converts the electrical energy of the battery 123 into mechanical energy for operating various devices provided in the vehicle.

The generator 125 is a starter generator, connected to the crankshaft 122a of the engine by a belt 122b, and operates as a motor when starting the engine 122 by interlocking with the crankshaft 122a of the engine. Battery 123 is charged when 122 is not being used to drive wheels.

That is, the generator 125 operates as a generator by the power of the engine 122 or operates as a generator by the power transmitted through the engine 122 under energy regeneration conditions such as braking, deceleration, or low-speed driving, and the battery 123 ) is charged.

In addition, the vehicle may receive power from a charger disposed in a parking lot or charging station and charge the battery using the supplied power.

The power converter 126 converts the power of the battery 123 into driving power of the motor 124 or converts the power generated by the generator 125 into rechargeable power of the battery.

Also, the power converter 126 converts the power of the battery 123 into driving power of the generator 125 .

This power converter 126 may include an inverter and a converter and may include at least one power module 200 . This power module 200 will be described later.

The power converter 126 can also change the direction and output of current between the motor 124 and the battery 123 .

The clutch 127 may be closed when driving force is generated using only the engine 122 and may be opened when driving force is generated using power of the battery 123 .

For example, the clutch 127 may be opened when driving at a reduced speed or at a low speed using a motor, may be opened when braking is performed, and may perform acceleration driving and constant speed driving at or above a certain speed. It can be closed when

The transmission 128 transfers rotational motion of the engine 122 and the motor 124 to the wheels 121 .

The differential device 129 is provided between the transmission 128 and the wheels 121 and adjusts the transmission ratio of the transmission 128 to generate driving force of the left and right wheels, respectively, and transmits the generated driving force to the left and right wheels.

The vehicle 100 may further include an auxiliary battery (not shown) that generates low-voltage current and is electrically connected to audio devices, interior lamps, and other electronic devices to supply the generated low-voltage current as driving power. . This auxiliary battery may be charged by the battery 123 .

The vehicle 100 may include a steering wheel of a steering device for adjusting a driving direction, a brake pedal pressed by the user according to the user's will to brake, and an accelerator pedal pressed by the user according to the user's will to accelerate. there is.

3 is an external view of a power module according to an embodiment.

Although this embodiment describes a power module provided in a vehicle as an example, this power module may be provided in various electronic devices as well as a vehicle.

Here, the electronic device may be a device having components in which input power and power used for driving are different.

Also, the electronic device may be a device including a motor, a device including a rechargeable battery, or a device including both a motor and a battery.

For example, an electronic device including a motor may be a refrigerator, an air conditioner, a washing machine, a vacuum cleaner, and personal mobility, a device including a battery may be a mobile device, and an electronic device including both a battery and a motor may be a robot. , personal mobility, and remotely controlled devices such as drones.

Such an electronic device may include a low power device that controls a small current by applying a low voltage and a power device that controls a large current by applying a high voltage.

The power module includes a power element to which a high voltage is applied or a large current can flow.

Representative examples of power devices include a Power Metal-Oxide-Semiconductor Field Effect Transistor (Power MOSFET), a Junction Field Effect Transistor (JFET), and an Insulated Gate Bipolar Transistor (Insulated Gate Transistor). Bipolar Transistor (IGBT), Bipolar Junction Transistor (BJT), Thyristor, and the like.

The power device may be implemented as a power module in which one or several power transistors are integrated due to size, heat dissipation, and the like.

For example, the power module may include one power transistor and one power diode, or may include a power module in which two power transistors and two power diodes are integrated.

This embodiment describes a power module having two semiconductor modules in which one diode is connected in parallel to one transistor.

As shown in FIG. 3 , the power module 200 includes a terminal unit 210 , a frame unit 220 , an element unit 230 and a substrate 240 .

The terminal unit 210 is connected to the first and second external devices, receives power from the first external device, and outputs the power converted by the element unit 230 to the second external device.

The first external device may be a power supply source such as a commercial power source, and the second external device may be a battery or a motor.

The terminal unit 210 may include a first DC terminal 211 and a second DC terminal 212 through which DC power is input or output, and an AC terminal 213 through which AC power is output or input.

The frame unit 220 includes a plurality of frame terminals, is connected to an external controller (not shown) and the element unit 230 through at least one frame terminal, and transmits a control signal of the external controller to the element unit 230. do.

That is, the frame unit 220 includes a first frame terminal 221 for transmitting a first control signal for controlling the first transistor S1 and a second control signal for controlling the second transistor S2. A second frame terminal 226 may be included.

The device unit 230 may include a plurality of semiconductor devices for converting power.

A plurality of semiconductor devices may be disposed on the substrate 240 , electrically connected to the frame unit 220 , and electrically connected to the terminal unit 210 through the substrate 240 . The configuration of the element unit 230 will be described later.

The substrate 240 emits heat generated when power is input and output, emits heat generated by driving the device unit, and transmits power input through the terminal unit 210 to the device unit 230. and transfers the converted power to the terminal unit 210.

That is, the substrate 240 is a passage through which heat and electricity move, and allows heat to be discharged to the outside, and transfers power to other conductive objects (eg, terminal parts and element parts).

The substrate 240 may include a conductive portion including a conductive material. For example, the conductive portion of the substrate 240 may be a metal object such as copper, silver, gold, or the like. The configuration of the substrate 240 will be described later.

FIG. 4 is an exemplary configuration diagram of the element unit 230 shown in FIG. 3 .

As shown in FIG. 4 , the device unit 230 of the power module 200 may include a plurality of semiconductor devices 231 , 232 , 233 , and 234 .

The device unit 230 of the power module 200 includes a first semiconductor device 231 in which the first transistor S1 is implemented and a second semiconductor device 232 in which the first diode D1 is implemented. A second semiconductor module including a semiconductor module, a third semiconductor element 233 in which the second transistor S2 is implemented, and a fourth semiconductor element 234 in which the second diode D2 is implemented.

The first semiconductor element 231 may be electrically connected to the first DC terminal 211 and the AC terminal 213 through the substrate 240, and the third semiconductor element 233 may be connected to the second terminal through the substrate 240. It may be electrically connected to the DC terminal 212 and the AC terminal 213.

Also, the first semiconductor element 231 and the third semiconductor element 233 may be electrically connected to each other.

Also, the first semiconductor element 231 and the third semiconductor element 233 may be electrically connected to the frame part 220 .

Also, the first semiconductor element 231 may be electrically connected to the second semiconductor element 232 , and the third semiconductor element 233 may be electrically connected to the fourth semiconductor element 234 .

More specifically, the first transistor S1 of the device unit 230 of the power module 200 may be connected in parallel with the first diode D1 and connected in series with the second transistor S2. Also, the second transistor S2 may be connected in parallel with the second diode D2.

Here, the first transistor S1 and the second transistor S2 may be IGBTs, MOSFETs, or BJTs.

In this embodiment, an IGBT is described as an example of the first transistor S1 and the second transistor S2.

Here, in the case of an N-channel IGBT, the current from the collector to the emitter is conducted or blocked according to the voltage applied to the gate, and in the case of the P-channel IGBT, the current from the emitter to the collector is conducted according to the voltage applied to the gate. be blocked or blocked. Of these, a P-channel IGBT will be described as an example.

The first transistor S1 includes a first gate G1, a first emitter E1 and a first collector C1, and the second transistor S2 has a second gate G2, a second emitter ( E2) and a second collector C2.

The first emitter E1 of the first transistor S1 may be connected to the first DC terminal 211, and the first collector C1 of the first transistor S1 may be connected to the second collector C1 of the second transistor S2. It can be connected to emitter E2.

An AC terminal 213 may be connected between the first collector C1 of the first transistor S1 and the second emitter E2 of the second transistor S2.

A first diode D1 may be connected between the first emitter E1 and the first collector C1 of the first transistor S1.

The first collector C2 of the second transistor S2 may be connected to the second DC terminal 212 .

A second diode D2 may be connected between the second emitter E2 and the second collector C2 of the second transistor S2.

Operations of the first transistor S1 and the second transistor S2 will be briefly described.

The first emitter E1 of the first transistor S1 may be connected to the first DC terminal 211 of the power module 200, and the first collector C1 may be connected to the AC terminal 213 of the power module 200. ) can be associated with

As a result, the first transistor S1 controls the current between the first emitter E1 and the first collector C1 according to the voltage applied between the first gate G1 and the first collector C1. A current output from the first DC terminal 211 to the AC terminal 213 may be controlled.

More specifically, when the voltage applied between the first gate G1 and the first collector C1 is less than a predetermined threshold voltage, the first transistor S1 outputs the first collector from the first emitter E1. Cut off the current to (C1).

In addition, when the voltage applied between the first gate G1 and the first collector C1 is greater than a predetermined threshold voltage, the first transistor S1 transmits power from the first emitter E1 to the first collector C1. pass current

The second emitter E2 of the second transistor S2 may be connected to the AC terminal 213 of the power module 200, and the second collector C2 may be connected to the second DC terminal 212 of the power module 200. ) can be associated with

As a result, the second transistor S2 controls the current between the second emitter E2 and the second collector C2 according to the voltage applied between the second gate G2 and the second collector C2. A current output from the AC terminal 213 to the second DC terminal 212 may be controlled.

The first gate G1 of the first transistor S1 may be connected to the first frame terminal 221 of the frame part, and the second gate G2 of the second transistor S2 may be connected to the second frame terminal 226 of the frame part. ) can be associated with

The first diode D1 and the second diode D2 conduct current from the anode to the cathode and block current from the cathode to the anode.

A PN diode, a PIN diode, a Schottky diode, or the like may be employed as the first diode D1 and the second diode D2.

More specifically, the anode of the first diode D1 may be connected to the first collector C1 of the first transistor S1, and the cathode may be connected to the first emitter E1.

As a result, the first diode D1 can block the current from the first DC terminal 211 to the AC terminal 213 and pass the current from the AC terminal 213 to the first DC terminal 211 .

An anode of the second diode D2 may be connected to the second collector C2 of the second transistor S2, and a cathode may be connected to the second emitter E2.

As a result, the second diode D2 can block the current from the AC terminal 213 to the second DC terminal 212 and pass the current from the second DC terminal 212 to the AC terminal 213 .

5 is an exemplary layout view of an element unit of a power module.

In this embodiment, as shown in FIG. 3 , in order to implement a power module, a plurality of semiconductor elements of the element unit connected as shown in FIG. 4 are disposed as shown in FIG. 5 .

The first semiconductor element 231 and the second semiconductor element 232 may be disposed in the first region, and the third semiconductor element 233 and the fourth semiconductor element 234 may be disposed in the second region.

In addition, the first semiconductor element 231 may be disposed in a different region from the third semiconductor element 233 but disposed on one side of the third semiconductor element 233, and the second semiconductor element 232 may be disposed in a fourth semiconductor element. 234 and may be disposed on one side of the fourth semiconductor element 234.

The first emitter E1 of the first transistor S1 and the cathode of the first diode may be connected to the first region of the substrate 240, and may be connected to the second emitter E2 of the second transistor S2 and the second emitter E2 of the second transistor S2. A cathode of the two diodes may be connected to the second region of the substrate 240 .

A plurality of semiconductor devices may be connected through separate lines.

That is, the first collector C1 of the first transistor S1 and the second emitter E of the second transistor S2 may be connected through a separate first line, and the first collector C1 of the first transistor S1 may be connected to the second emitter E of the second transistor S2. The collector C1 and the anode of the first diode D1 may be connected through a separate second line.

Also, the second collector C2 of the second transistor S2 and the anode of the second diode D2 may be connected through a separate third line.

Here, the third line may be connected to the third region of the substrate 240 .

The first area of the substrate 240 is the first substrate 240a, the second area is the second substrate 240b, and the third area is the third substrate 240c.

In order to help understand the connection relationship between the substrate and the element unit, it will be described with reference to FIG. 5 .

In the power module of FIG. 5, the line P1 connected to the first DC terminal 211 may be the first substrate, and the line P2 connected to the AC terminal 213 may be the second substrate, A line P3 connected to the second DC terminal 212 may serve as a third substrate.

The substrate 240 of the power module includes a first substrate 240a on which the first and second semiconductor elements 231 and 232 are disposed and the first DC terminal 211 is connected, and the third and fourth semiconductor elements 233 and 234 It includes a second substrate 240b on which the AC terminal 213 is connected and a third substrate 240c to which the second DC terminal 212 is connected.

The configuration of such a substrate will be described with reference to FIGS. 6 to 9 .

6A and 6B are perspective views of a power module according to an embodiment, FIG. 7 is a view showing an AA′ section of the power module shown in FIG. 6A, and FIG. 8 is a BB′ section of the power module shown in FIG. 6A , and FIG. 9 is a view showing a CC′ section of the power module shown in FIG. 6A.

The first substrate 240a, the second substrate 240b, and the third substrate 240c may be disposed side by side on the same plane.

The first substrate 240a, the second substrate 240b, and the third substrate 240c may employ a printed circuit board, and may include upper conductive layers 241a, 241b, and 241c, and insulating layers 242a, 242b, and 242c, respectively. ), and lower conductive layers 243a, 243b, and 243c.

The first and second semiconductor elements 231 and 232 are disposed on the upper conductive layer 241a of the first substrate 240a. Here, the first transistor S1 described above with reference to FIG. 4 may be implemented in the first semiconductor element 231 , and the first diode D1 may be implemented in the second semiconductor element 232 .

The first semiconductor element 231 and the second semiconductor element 232 may be electrically connected to each other through the upper conductive layer 241a of the first substrate 240a.

The first semiconductor element 231 and the second semiconductor element 232 include upper and lower bonding layers 231-1 and 232-1 and lower bonding layers 231-2 and 232-2, respectively. , The upper junction layers 231-1 and 232-1 of the first semiconductor element 231 and the second semiconductor element 232 are respectively extended portions 241b- of the upper conductive layer 241b of the second substrate 240b. 1) Can be bonded to the lower part, and the lower bonding layers 231-2 and 232-2 of the first semiconductor element 231 and the second semiconductor element 232 are respectively the upper conductive layer of the first substrate 240a ( 241a).

The upper conductive layer 241a of the first substrate 240a has high electrical conductivity and may be made of a material with high thermal conductivity to dissipate heat. For example, the upper conductive layer 241a of the first substrate 240a may be made of a metal such as copper (Cu) or aluminum (Al).

The upper conductive layer 241a of the first substrate 240a may be spaced apart from the upper conductive layer 241b of the second substrate 240b and the upper conductive layer 241c of the third substrate 240c by a predetermined gap. . An insulating member may be disposed in the gap between the upper conductive layer 241a of the first substrate 240a and the upper conductive layer 241b of the second substrate 240b, and the upper conductive layer of the first substrate 240a ( An insulating member may also be disposed in the gap between 241a) and the upper conductive layer 241c of the third substrate 240c.

One side of the upper conductive layer 241a of the first substrate 240a may be electrically connected to the first DC terminal 211 by directly contacting the first DC terminal 211 .

In addition, the other side of the upper conductive layer 241a of the first substrate 240a may be electrically connected to the first frame terminal 221 through, for example, a wire.

The insulating layer 242a of the first substrate 240a may insulate the lower conductive layer 243a from the upper conductive layer 241a and the outside, and heat generated by the first and second semiconductor elements 231 and 232 can be released to the outside.

The insulating layer 242a of the first substrate 240a may be made of a material having low electrical conductivity and high thermal conductivity. For example, the insulating layer 242a may be made of a ceramic material such as aluminum nitride (AlN).

The lower conductive layer 243a of the first substrate 240a may be electrically grounded and may emit heat generated by the first and second semiconductor devices 231 and 232 to the outside.

The lower conductive layer 243a of the first substrate 240a may be made of a material having high electrical conductivity and high thermal conductivity. For example, the lower conductive layer 243a may be made of a metal such as copper (Cu) or aluminum (Al).

The third and fourth semiconductor devices 233 and 234 are disposed on the upper conductive layer 241b of the second substrate 240b. Here, the second transistor S2 described above with reference to FIG. 4 may be implemented in the third semiconductor element 233 , and the second diode D2 may be implemented in the fourth semiconductor element 234 .

The third semiconductor element 233 and the fourth semiconductor element 234 may be electrically connected to each other through the upper conductive layer 241b of the second substrate 240b.

The third semiconductor element 233 and the fourth semiconductor element 234 include upper junction layers 233-1 and 234-1 and lower junction layers 233-2 and 234-2, respectively. 233 and the upper bonding layers 233-1 and 234-1 of the fourth semiconductor element 234 are bonded to the lower portion 241c-1 of the upper conductive layer 241c of the third substrate 240c, respectively. The lower bonding layers 233-2 and 234-2 of the third semiconductor element 233 and the fourth semiconductor element 234 may be bonded to the upper conductive layer 241c of the third substrate 240c, respectively. can

The upper conductive layer 241b of the second substrate 240b has high electrical conductivity and may be made of a material with high thermal conductivity to dissipate heat. For example, the upper conductive layer 241b of the second substrate 240b may be made of a metal such as copper (Cu) or aluminum (Al).

The upper conductive layer 241b of the second substrate 240b may be spaced apart from the upper conductive layer 241a of the first substrate 240a and the upper conductive layer 241c of the third substrate 240c by a predetermined gap. . An insulating member may be disposed in the gap between the upper conductive layer 241b of the second substrate 240b and the upper conductive layer 241a of the first substrate 240a, and the upper conductive layer of the second substrate 240b ( An insulating member may also be disposed in the gap between 241b) and the upper conductive layer 241c of the third substrate 240c.

The upper conductive layer 241b of the second substrate 240b may extend toward the first substrate 240a to form an extension 241b-1. In this case, the lower portion of the extension 241b-1 may be attached to the upper portions of the upper bonding layers 231-1 and 232-1 of the first and second semiconductor elements 231 and 232 of the first substrate 240a. there is.

Since the height of the first substrate 240a and the height of the second substrate 240b may be the same, the extension portion 241b-1 of the second substrate 240b is the height of the first and second semiconductor elements 231 and 232. To be attached to the top, the extension 241b-1 extends upward by the height of the first and second semiconductor elements 231 and 232, extends to the left to be connected to the first semiconductor element 231, and It may extend forward to be connected to the semiconductor element 232 as well.

Meanwhile, unlike those shown in FIGS. 6A and 6B , the extension 241b-1 of the second substrate 240b may be preferentially connected to the second semiconductor element 232. In this case, the extension 241b-1 1) extends upward by the height of the first and second semiconductor elements 231 and 232, extends to the left to be connected to the second semiconductor element 232, and extends to the rear to be connected to the first semiconductor element 231 as well. It could be.

One side of the upper conductive layer 241b of the second substrate 240b may be electrically connected to the second DC terminal 212 through direct contact, for example.

In addition, the other side of the upper conductive layer 241b of the second substrate 240b may be electrically connected to the second frame terminal 222 through, for example, a wire.

The insulating layer 242b of the second substrate 240b may insulate the lower conductive layer 243b from the upper conductive layer 241b and the outside, and heat generated by the third and fourth semiconductor devices 233 and 234 can be released to the outside.

The insulating layer 242b of the second substrate 240b may be made of a material having low electrical conductivity and high thermal conductivity. For example, the insulating layer 242b may be made of a ceramic material such as aluminum nitride (AlN).

The lower conductive layer 243b of the second substrate 240b may be electrically grounded and may emit heat generated by the third and fourth semiconductor devices 233 and 234 to the outside.

The lower conductive layer 243b of the second substrate 240b may be made of a material having high electrical conductivity and high thermal conductivity. For example, the lower conductive layer 243b may be made of a metal such as copper (Cu) or aluminum (Al).

The upper conductive layer 241c of the third substrate 240c has high electrical conductivity and may be made of a material with high thermal conductivity to dissipate heat. For example, the upper conductive layer 241c of the third substrate 240c may be made of a metal such as copper (Cu) or aluminum (Al).

The upper conductive layer 241c of the third substrate 240c may be spaced apart from the upper conductive layer 241a of the first substrate 240a and the upper conductive layer 241b of the second substrate 240b at regular intervals. . An insulating member may be disposed in the gap between the upper conductive layer 241c of the third substrate 240c and the upper conductive layer 241a of the first substrate 240a, and the upper conductive layer of the third substrate 240c ( An insulating member may also be disposed in the gap between 241c) and the upper conductive layer 241b of the second substrate 240b.

The upper conductive layer 241c of the third substrate 240c may extend toward the second substrate 240b to form an extension portion 241c-1. In this case, the lower portion of the extension 241c-1 may be attached to the upper portions of the upper bonding layers 233-1 and 234-1 of the third and fourth semiconductor devices 233 and 234 of the second substrate 240b. there is.

Since the height of the third substrate 240c and the height of the second substrate 240b may be the same, the extension 241c-1 of the third substrate 240c is the height of the third and fourth semiconductor devices 233 and 234. To be attached to the top, the extension 241c-1 extends upward by the height of the third and fourth semiconductor elements 233 and 234 and extends to the right so as to be connected to the fourth semiconductor element 234. It may extend backward to be connected to the semiconductor element 233 as well.

6A and 6B, the extension 241c-1 of the third substrate 240c may be preferentially connected to the third semiconductor element 233. In this case, the extension 241c-1 1) extends upward by the height of the third and fourth semiconductor elements 233 and 234, extends to the right to be connected to the third semiconductor element 233, and extends forward to be connected to the fourth semiconductor element 234 as well. It could be.

The upper conductive layer 241c of the third substrate 240c may be electrically connected to the AC terminal 213 through direct contact, for example.

The insulating layer 242c of the third substrate 240c may insulate the lower conductive layer 243c from the upper conductive layer 241c and the outside, and may emit heat to the outside.

The insulating layer 242c of the third substrate 240c may be made of a material having low electrical conductivity and high thermal conductivity. For example, the insulating layer 242c may be made of a ceramic material such as aluminum nitride (AlN).

The lower conductive layer 243c of the third substrate 240c may be electrically grounded and may emit heat to the outside.

The lower conductive layer 243c of the third substrate 240c may be made of a material having high electrical conductivity and high thermal conductivity. For example, the lower conductive layer 243c may be made of a metal such as copper (Cu) or aluminum (Al).

Meanwhile, unlike the separately provided upper conductive layers 241a, 241b, and 241c, the insulating layers of the first substrate 240a, the second substrate 240b, and the third substrate 240c may be provided as one layer, The lower conductive layers of the first substrate 240a, the second substrate 240b, and the third substrate 240c may also be provided as a single layer. However, it is not limited to this example, and the insulating layers 242a, 242b, and 242c of the first substrate 240a, the second substrate 240b, and the third substrate 240c are separately provided, respectively, and the lower conductive layer (243a, 243b, 243c) It is also possible to provide each separately.

As above, the disclosed embodiments have been described with reference to the accompanying drawings. Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in a form different from the disclosed embodiments without changing the technical spirit or essential features of the present invention. The disclosed embodiments are illustrative and should not be construed as limiting.

100: vehicle 200: power module
210: terminal part 220: frame part
230: element unit 240: substrate

Claims (20)

a first substrate on which a first semiconductor module for converting power is disposed and to which a first DC terminal is connected;
a second substrate on which a second semiconductor module for converting the power is disposed and an AC terminal is connected; and
A third substrate to which the second DC terminal is connected,
The first substrate includes a first upper conductive layer, a first insulating layer and a first lower conductive layer,
The second substrate includes a second upper conductive layer, a second insulating layer and a second lower conductive layer,
The third substrate includes a third upper conductive layer, a third insulating layer and a third lower conductive layer,
The second upper conductive layer of the second substrate is connected to the first semiconductor module of the first substrate;
The third upper conductive layer of the third substrate is connected to the second semiconductor module of the second substrate. According to claim 1,
An upper conductive layer of the second substrate extends toward the first substrate to form an extension portion, and a lower portion of the extension portion is attached to an upper portion of the first semiconductor module of the first substrate. According to claim 2,
The first semiconductor module includes an upper bonding layer and a lower bonding layer,
A lower portion of the extension portion of the second substrate is bonded to an upper portion of the upper bonding layer of the first semiconductor module. According to claim 2,
The first substrate and the second substrate are disposed side by side on the same plane,
The extension part of the second substrate extends upward by a height of the first semiconductor module, extends toward the first semiconductor module, and is connected to the first semiconductor module. According to claim 1,
The third upper conductive layer extends toward the second substrate to form an extension portion, and a lower portion of the extension portion is attached to an upper portion of the second semiconductor module of the second substrate. According to claim 5,
The second semiconductor module includes an upper bonding layer and a lower bonding layer,
A lower portion of the extension of the third upper conductive layer is bonded to an upper portion of the upper bonding layer of the second semiconductor module. According to claim 5,
The extension part of the third upper conductive layer extends upward by a height of the second semiconductor module, extends toward the second semiconductor module, and is connected to the second semiconductor module. According to claim 1,
The first semiconductor module includes a first transistor and a first diode,
The second semiconductor module includes a second transistor and a second diode. According to claim 1,
The first to third upper conductive layers are made of metal. According to claim 1,
The power module according to claim 1 , wherein the insulating layer is made of a ceramic material. According to claim 1,
The first upper conductive layer of the first substrate, the second upper conductive layer of the second substrate, and the third upper conductive layer of the third substrate are spaced apart from each other with a gap therebetween. According to claim 11,
An insulating member is disposed in the gap. According to claim 11,
The insulating layer of the first substrate and the insulating layer of the second substrate form one layer. According to claim 11,
The lower conductive layer of the first substrate and the lower conductive layer of the second substrate form one layer. rechargeable battery;
a motor that rotates using power from the battery;
A power module converting power supplied from the battery to the motor;
The power module,
A first substrate on which a first semiconductor module for converting power is disposed and to which a first DC terminal is connected;
a second substrate on which a second semiconductor module for converting the power is disposed and to which an AC terminal is connected;
Including a third substrate to which the second DC terminal is connected,
The first substrate includes a first upper conductive layer, a first insulating layer and a first lower conductive layer,
The second substrate includes a second upper conductive layer, a second insulating layer and a second lower conductive layer,
The third substrate includes a third upper conductive layer, a third insulating layer and a third lower conductive layer,
The second upper conductive layer of the second substrate is connected to the first semiconductor module of the first substrate;
The third upper conductive layer of the third substrate is connected to the second semiconductor module of the second substrate. According to claim 15,
An upper conductive layer of the second substrate extends toward the first substrate to form an extension portion, and a lower portion of the extension portion is attached to an upper portion of the first semiconductor module of the first substrate. According to claim 15,
The third upper conductive layer extends toward the second substrate to form an extension portion, and a lower portion of the extension portion is attached to an upper portion of the second semiconductor module of the second substrate. According to claim 15,
The first semiconductor module includes a first transistor and a first diode,
The second semiconductor module includes a second transistor and a second diode. According to claim 15,
The upper conductive layer of the first substrate and the upper conductive layer of the second substrate are spaced apart from each other with a gap therebetween. 18. The method of claim 17,
Further comprising a generator for generating electric power by rotation of the wheel,
and the power module converts the generated power into power for charging the battery.

Images