KR101836404B1 - Method for transferring graphene, graphene transferring apparatus and graphene structure - Google Patents

Method for transferring graphene, graphene transferring apparatus and graphene structure Download PDF

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KR101836404B1
KR101836404B1 KR1020150169267A KR20150169267A KR101836404B1 KR 101836404 B1 KR101836404 B1 KR 101836404B1 KR 1020150169267 A KR1020150169267 A KR 1020150169267A KR 20150169267 A KR20150169267 A KR 20150169267A KR 101836404 B1 KR101836404 B1 KR 101836404B1
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South Korea
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graphene
temperature
metal layer
carrier
target substrate
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KR1020150169267A
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Korean (ko)
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KR20170063190A (en
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원동관
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해성디에스 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C53/00—Shaping by bending, folding, twisting, straightening or flattening; Apparatus therefor
    • B29C53/56—Winding and joining, e.g. winding spirally
    • B29C53/564—Winding and joining, e.g. winding spirally for making non-tubular articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0036—Heat treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation

Abstract

The present invention provides a method for producing a catalyst layer, comprising the steps of: providing a catalyst metal layer; composing graphene on at least one side of the catalyst metal layer; forming a first structure by attaching a carrier to the graphene; Forming a second structure by attaching the target substrate to the graphene while applying pressure to the graphene of the second structure and the target substrate facing each other, And removing the carrier included in the third structure by passing the third structure through a heat applying section.

Description

TECHNICAL FIELD The present invention relates to a graphene transferring method, a graphene transferring apparatus and a graphene structure,

Embodiments of the present invention relate to a graphene transfer method, a graphene transfer apparatus and a graphene structure produced thereby, and more particularly to a graphene transfer method in which degradation of graphene characteristics occurring when transferring graphene is reduced, To a graphen transferring apparatus and a graphen structure manufactured thereby.

Currently, carbon based materials such as carbon nanotubes, diamond, graphite, and graphene are being studied in a wide variety of nanotechnologies. These materials can be used or used in field effect transistors (FETs), biosensors, nanocomposites or quantum devices.

Graphene is a semiconductor material with a bandgap of zero gap as a two-dimensional material, and is very thin, transparent, and has very high electrical conductivity. Attempts have been made to apply graphene to a transparent display, a display that can be bent or a transparent electrode of a touch panel using such a property of graphene, and studies for synthesis of large area graphene have been actively conducted recently .

Since graphene is synthesized on a large area on a wafer or a metal substrate, in order to use graphene in an electronic device, a process of transferring graphene synthesized on a substrate included in an electronic device is essentially required. However, there arises a problem that graphene characteristics are deteriorated in such transfer process.

The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a graphene transfer method, a graphene transfer apparatus, and a graphene structure manufactured by the method, . However, these problems are exemplary and do not limit the scope of the present invention.

According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor device comprising the steps of providing a catalytic metal layer, synthesizing graphene on at least one side of the catalyst metal layer, attaching a carrier to the graphene to form a first structure, Removing the catalyst metal layer to form a second structure; placing the target substrate on the graphene while applying pressure to the graphene of the second structure facing the target substrate; And removing the carrier contained in the third structure by passing the third structure through a heat application section.

In one embodiment, the carrier may be a heat peeling tape having a predetermined peeling temperature.

In one embodiment, the exfoliating temperature may be between 80 and 180 degrees.

In one embodiment, removing the carrier may include separating the carrier by applying heat to the carrier contained in the third structure above the peeling temperature.

In one embodiment, removing the carrier may include separating the carrier by passing the third structure through a chamber having an internal temperature above the peel temperature.

In one embodiment, the forming of the third structure includes forming the third structure by applying pressure to the second structure and the target substrate through at least a pair of rollers can do.

In one embodiment, forming the third structure may include applying heat to the substrate at a temperature below the peeling temperature while applying pressure.

In one embodiment, the step of applying heat at a temperature below the exfoliation temperature may comprise the step of applying heat at a temperature between 30 degrees and 50 degrees.

In one embodiment, at least one of the at least one pair of rollers may comprise a hot line.

In one embodiment, each of the steps may be performed according to a reel-to-reel scheme.

According to another aspect of the present invention, there is provided a method of manufacturing a catalyst, comprising: forming a graphene on at least one surface of a catalyst metal layer; forming a carrier on the graphene to form a first structure; Removing the metal layer to form a second structure; placing the target substrate on the graphene while applying pressure to the graphene of the second structure facing the target substrate, And a heating unit for removing the carrier contained in the third structure by applying heat to the third structure.

In one embodiment, the carrier may be a thermal peel tape having a peel temperature between 80 and 180 degrees.

In one embodiment, the heating unit may apply heat to the carrier included in the third structure at a temperature equal to or higher than the peeling temperature.

In one embodiment, the heating section may include a chamber having an internal temperature equal to or higher than the peeling temperature.

In one embodiment, the pressing portion may include at least a pair of rollers.

In one embodiment, at least one of the at least one pair of rollers includes a hot line, and the pressing portion applies heat to the third structure at a temperature lower than the pressure and the peeling temperature.

According to still another aspect of the present invention, there is provided a graphene structure produced by the graphene transfer method of at least one of the first to the tenth aspects.

Other aspects, features, and advantages other than those described above will be apparent from the following detailed description, claims, and drawings.

According to an embodiment of the present invention as described above, a graphene transfer method capable of improving the characteristics of transferred graphene by reducing degradation of graphene characteristics occurring when transferring graphene, A graphene structure can be provided. Of course, the scope of the present invention is not limited by these effects.

1 is a flowchart illustrating a method of transferring graphene according to an embodiment of the present invention.
2 is a process diagram schematically showing the graphene transfer method of FIG.
FIG. 3 is a schematic cross-sectional view of the catalyst metal layer provided in accordance with step S100 of FIG. 1, corresponding to FIG.
4 is a cross-sectional side view corresponding to IV of Fig. 2, schematically showing a state in which graphene is synthesized in the catalyst metal layer according to step S110 of Fig.
5 is a side cross-sectional view corresponding to V of Fig. 2, schematically showing a state in which a carrier is attached to the graphene according to step S120 of Fig.
6 is a cross-sectional side view corresponding to Fig. 2 VI, schematically illustrating a state in which the catalyst metal layer is removed according to step S130 of Fig.
7 is a cross-sectional side view schematically showing a state of applying pressure according to step S140 of Fig.
8 is a side cross-sectional view corresponding to VIII of FIG. 2, schematically illustrating a state in which a target substrate contacts graphene in accordance with step S140 of FIG.
9 is a side cross-sectional view schematically showing a state of applying heat according to step S150 of FIG.
10 is a side cross-sectional view corresponding to X in Fig. 2, schematically showing a state in which carriers are removed according to step S150 in Fig.
11 is a partial process state diagram schematically showing one embodiment of steps S140 and S150 of FIG.
12 is a partial process state diagram schematically showing another embodiment of steps S140 and S150 in Fig.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods of achieving them will be apparent with reference to the embodiments described in detail below with reference to the drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding components throughout the drawings, and a duplicate description thereof will be omitted .

It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used in the specification, "comprises" and / or "comprising" do not exclude the presence or addition of the stated components, steps, operations, and / or elements. The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by terms. Terms are used only for the purpose of distinguishing one component from another.

In the present specification, when various components such as layers, films, regions, plates, and the like are referred to as being "on" another component, it is to be understood that not only is there a " . Also, for convenience of explanation, the components may be exaggerated or reduced in size. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings.

FIG. 1 is a flowchart showing a method of transferring graphene according to an embodiment of the present invention, and FIG. 2 is a process diagram schematically showing a graphene transferring method of FIG. Hereinafter, reference numerals for the layers formed or removed in each step will be described with reference to FIGS. 3 to 10. FIG.

Referring to FIGS. 1 and 2, a graphene transfer method according to an embodiment includes the steps of providing a catalyst metal layer 10 (S100), synthesizing graphene 20 on at least one surface of the catalyst metal layer 10 A step S110 of forming the first structure 1 by attaching the carrier 30 to the graphen 20 and a step S120 of removing the catalyst metal layer 10 from the first structure 1, The target substrate 40 is graphened while the pressure P is applied after the graphene 20 of the second structure 2 and the target substrate 40 are opposed to each other at step S130, Forming the third structure 3 by attaching the third structure 3 to the second structure 20 and removing the carrier 30 by passing the third structure 3 through the heat application section 150 . According to one embodiment, the graphene transferring method comprises the steps of reel 101, 102, 103 and rollers 111, 112, 113, 114, 131, 132, 141, 142, 161, 162, And a graphen transferring apparatus 100 driven by a reel to reel method in which the following steps are successively performed by the graphen transferring apparatus 100.

≪ Step S100 &

The catalyst metal layer 10 is transported using the reel 101 in step S100 and the transported catalyst metal layer 10 may be provided in the graphen forming part 110. [ 3 schematically shows the catalytic metal layer 10 provided in accordance with step S100, which is a cross-sectional side view corresponding to III in Fig.

The catalytic metal layer 10 may be formed of at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, (Mn), Rh, Rh, Ta, Ti, W, U, V, and Zr. .

In FIG. 3, the case where the catalytic metal layer 10 is a single layer is exemplified, but the present invention is not limited thereto. The catalyst metal layer 10 is included not only in the case of a single layer but also in the case where a catalyst metal layer is formed in one layer, for example, the outermost layer in a structure composed of a plurality of layers. That is, the catalyst metal layer 10 may be a single layer or at least one layer formed at the outermost of the plurality of layers.

≪ Step S110 &

When the catalyst metal layer 10 is provided in the graphene formation part 110 in step S110, the graphene 20 is synthesized by heat-treating the catalyst metal layer 10 while supplying a gaseous carbon source thereto.

The graphene 20 has a plurality of carbon atoms connected to each other through a covalent bond to form a two-dimensional flat sheet. The carbon atoms connected by a covalent bond form a 6-membered ring as a basic repeating unit, It is also possible to further include a 7-membered ring. Thus, graphene 20 forms a single layer of covalently bonded carbon atoms (usually sp2 bonds). The graphene 20 may have a variety of structures, and such a structure may vary depending on the content of the 5-membered ring and / or the 7-membered ring which may be contained in the graphene 20.

A carbon source in the gaseous methane (CH 4), carbon monoxide (CO), ethane (C 2 H 6), ethylene (CH 2), ethanol (C 2 H 5), acetylene (C 2 H 2), propane (CH 3 CH 2 CH 3), propylene (C 3 H 6), butane (C 4 H 10), pentane (CH 3 (CH 2) 3 CH 3), pentene (C 5 H 10), dicyclopentadiene (C 5 H 6), hexane (C 6 H 14), cyclohexane (C 6 H 12), benzene (C 6 H 6), toluene (C 7 H 8), etc. there are one or more selected from the included carbon atoms the group may be used . Such a gaseous carbon source is separated into carbon atoms and hydrogen atoms at high temperatures.

The separated carbon atoms are deposited on the heated catalyst metal layer 10 and synthesized into the graphene 20 while the catalyst metal layer 10 is cooled. In order to synthesize the graphene 20, a chemical vapor deposition (CVD) method, a thermal chemical vapor deposition (TCVD) method, a rapid thermal chemical vapor deposition (RTCVD) method, Various processes such as ICP-PECVE (Inductive Coupled Plasma Enhanced Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) may be used.

Although not shown, the process of forming the graphenes 20 may be performed in a chamber (not shown) included in the graphen forming unit 110 and may be carried out by the rollers (not shown) The catalyst metal layer 10 is drawn into the chamber (not shown) using the catalyst metal layer 10 and the graphene 20 is formed on the catalyst metal layer 10 using the catalyst layers 111, 112, 113 and 114 .

4 is a side cross-sectional view corresponding to IV in Fig. 2, schematically showing a state in which the graphene 20 is synthesized on the catalyst metal layer 10 according to step S110. Although the graphenes 20 are shown as one layer in FIG. 4, the present invention is not limited thereto, and the graphenes 20 may be formed of a plurality of layers. 4, the graphene 20 is formed on only one side of the catalytic metal layer 10, but the present invention is not limited thereto. The graphene 20 may be formed on both sides of the catalytic metal layer 10 have.

≪ Step S120 &

In step S120, the first structure 1 can be formed by attaching the carrier 30 on the graphen 20. [ 2, when the catalytic metal layer 10 formed with the graphenes 20 is drawn into the carrier forming portion 120, the carrier 30 wound around the reel 102 is also wound on the carrier forming portion 120 So that it can be pulled in.

The carrier 30 may be a thermal release tape (TRT) having a predetermined peeling temperature. The thermal peeling tape includes an adhesive member (not shown) disposed on a base film (not shown) and a base film (not shown). The adhesive member (not shown) has an adhesive force below the peeling temperature, When applied, the chemical bond may change and lose its adhesion.

The peeling temperature may vary depending on the material constituting the adhesive member (not shown). According to one embodiment, the peeling temperature may be about 80 degrees to about 150 degrees.

The carrier 30 may be attached to the graphene 20 by a carrier forming portion 120 and the carrier forming portion 120 may be attached to the carrier 30 by applying a minimum pressure The carrier 30 can be attached to the graphene 20. The intaglio carrier 30 may function as an intermediary for transporting the graphene 20 while maintaining the shape of the graphene 20. 5 is a side cross-sectional view corresponding to V in Fig. 2, schematically showing a state in which the carrier 30 is attached to the graphen 20 according to step S120.

≪ Step S130 &

The first structure 1 transported by the rollers 131 and 132 may be provided to the catalyst metal layer removing unit 130 and the catalyst metal layer 10 included in the first structure 1 may be provided The second structure 2 including the graphene 20 and the carrier 30 can be formed by removing the catalyst metal layer by the catalytic metal layer removing unit 130. [

The catalytic metal layer removing unit 130 may remove the catalytic metal layer 10 by a method such as etching and may include an injector (not shown) for spraying the etching solution onto the catalytic metal layer 10, (Not shown) containing a liquid. FIG. 6 is a side sectional view corresponding to FIG. 2 VI, schematically showing a state in which the catalyst metal layer 10 is removed according to step S130. Referring to FIG. 2, the process after step S130 is performed such that the structure including the graphenes 20 is inverted. However, for convenience of explanation, FIGS. 6 to 10 show the structure including the graphenes 20 And are shown in an inverted state.

≪ Step S140 &

The target substrate 40 wound around the second structure 2 and the reel 103 manufactured in step S130 may be provided in the pressing unit 140 in step S140. FIG. 7 is a side cross-sectional view schematically showing a state of applying pressure in accordance with step S140, FIG. 8 is a schematic view of a state in which the target substrate 40 is in contact with the graphene 20, Fig.

Referring to FIGS. 2, 7 and 8, the graphene 20 and the target substrate 40 are provided on the pressing portion 140 so as to face each other, and the pressure P is applied using the pressing portion 140 The third substrate 3 can be formed by attaching the target substrate 40 to the graphene 20.

According to one embodiment, the target substrate 40 may include polyethylene terephthalate (PET), polycarbonate (PC), or glass.

The pressing unit 140 may include at least one pair of rollers 131 and 132 and may be provided between the second structure 2 and the target substrate 40 between at least a pair of rollers 131 and 132. [ Pressure can be applied by passing. According to one embodiment, heat is not applied or heat below the peeling temperature is applied during the pressing by the pressing part 140, so that even after passing through the pressing part 140, 20).

If a high-temperature heat is applied to the graphene 20 together with the pressing, the graphene 20 may be deformed and the characteristics may be deteriorated. However, according to the embodiment, the heat of the separation temperature is not applied during the pressing process of attaching the target substrate 40 to the graphene 20, can do.

≪ Step S150 &

 In step S150, the third structure 3 is provided to the heating part 150 and the carrier 30 included in the third structure 3 can be separated by passing through the heat applying part of the heating part 150 . 9 is a side cross-sectional view schematically showing a state of applying heat according to step S150, and Fig. 10 is a side cross-sectional view corresponding to X of Fig. 2, schematically showing a state in which the carrier 30 is removed according to step S150 .

The heating unit 150 may apply heat to the carrier 30 included in the third structure 3 at a temperature higher than the peeling temperature, and the temperature may be about 80 degrees to about 150 degrees. The adhesive force of the adhesive member (not shown) contained in the carrier 30 is lost when heat is applied at a temperature higher than the peeling temperature, so that the carrier 30 can naturally be separated from the graphen 20. 10 shows a graphen structure 4 from which the carrier 30 has been removed from the third structure 3 and the graphen structure 4 can be a laminate of the target substrate 40 and the graphen 20. FIG. The manufactured graphene structure 4 can be taken out of the graphene transfer apparatus 100 by the rollers 161 and 162 and the produced graphene structure 4 can be transferred to a transparent display, And a touch panel.

As described above, the step of attaching the target substrate 40 to the graphene 20 by applying pressure and the step of separating the carrier 30 by applying heat above the peeling temperature are performed at the same time without being performed simultaneously, The characteristics of the transferred graphene 20 included in the pin structure 4 can be improved.

11 is a partial process state diagram schematically showing another embodiment of steps S140 and S150 of FIG.

Referring to FIG. 11, in step S140, the target substrate 40 wound around the second structure 2 and the reel 103 manufactured by step S130 may be provided on the pressing part 140. FIG.

The pressing unit 140 may include at least one pair of rollers 141 and 142 and a second structure 2 and a target substrate 40 may be disposed between at least a pair of rollers 141 and 142. [ Pressure can be applied by passing. According to one embodiment, in step S140, degradation of the characteristics of the graphene 20 can be minimized by applying only pressure without heating.

The third structure 3 formed by step S140 may be provided to the heating unit 150. The heating unit 150 may include a roller 156 for supporting and conveying the third structure 3, And a heating means 155 for applying heat equal to or higher than the peeling temperature of the carrier 30 to the third structure 3.

12 is a partial process state diagram schematically showing one embodiment of steps S140 and S150 of FIG.

Referring to FIG. 12, the graphene transfer method according to an embodiment of the present invention is a method in which graphene 20 of a second structure 2 (FIG. 6) and a target substrate 40 are opposed to each other, (S140) forming the third structure 3 by attaching the first structure 40 to the graphen 20 and passing the region where the third structure 3 is subjected to heat, And removing the carrier 30 (S150).

The target substrate 40 wound around the second structure 2 and the reel 103 manufactured in step S130 may be provided to the pressing part 140 in step S140.

The pressing unit 140 may include at least one pair of rollers 141 and 142 and a second structure 2 and a target substrate 40 may be disposed between at least a pair of rollers 141 and 142. [ Pressure can be applied by passing. According to one embodiment, at least one roller 141 of at least one pair of rollers 141, 142 may include a heat line 143. The heating wire 143 is connected to the power supply 145 and can heat the roller 141 when the power is supplied by the power supply 145.

Heat can be applied at a temperature lower than the peeling temperature while applying pressure to the second structure 2 and the target substrate 40 by the heated roller 141. [ According to one embodiment, the temperature may be from about 30 degrees to about 50 degrees. With this configuration, the target substrate 40 can be efficiently attached to the graphene 20. The temperature is much lower than the peeling temperature of the carrier 30 from about 80 to about 150. Even if the heat of this temperature is applied, the characteristics of the graphene 20 are not degraded, ). ≪ / RTI >

The third structure 3 formed by step S140 may be provided to the heating unit 150 and the heating unit 150 may include the chamber 151 having an internal temperature equal to or higher than the peeling temperature. Rollers 153 and 154 are disposed at the inlet of the chamber 151 to allow the third structure 3 to be drawn into the chamber 151. A heating means 152 may be disposed inside the chamber 151. The third structure 3 passes through the chamber 151 and the carrier 30 can be separated from the graphen 20 by heat above the peeling temperature.

The target substrate 40 can be efficiently attached to the graphene 20 without lowering the characteristics of the graphene 20 by simultaneously applying heat at a temperature lower than the pressure and the peeling temperature, The carrier 30 is separated from the graphene 20 by applying heat at a temperature equal to or higher than the peeling temperature in the process to form the graphene structure 4 as the lamination of the target substrate 40 and the improved graphene 20 can do.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

1: first structure 2: second structure
3: Third structure 4: Graphene structure
10: catalyst metal layer 20: graphene
30: Carrier 40: Target substrate
100: graphen transfer device 110: graphen forming part
120: Carrier forming part 130: Catalytic metal layer removal
140: pressing part 150: heating part

Claims (17)

Providing a catalytic metal layer;
Synthesizing graphene on at least one side of the catalytic metal layer;
Attaching a carrier provided with a heat peeling tape having a predetermined peeling temperature to the graphene to form a first structure;
Removing the catalyst metal layer from the first structure to form a second structure;
Attaching the target substrate to the graphene while applying pressure and simultaneously applying heat to the graphene of the second structure opposite to the target substrate and forming a third structure; And
And removing the carrier contained in the third structure by passing the third structure through an interval of applying a pressure equal to or lower than the atmospheric pressure and a heat equal to or higher than the separation temperature. delete The method according to claim 1,
Wherein the peeling temperature is 80 to 180 degrees. delete The method according to claim 1,
Wherein removing the carrier comprises separating the carrier by passing the third structure through a chamber having an internal temperature equal to or greater than the peel temperature. The method according to claim 1,
Wherein forming the third structure comprises applying pressure to form the third structure by passing the second structure and the target substrate between at least a pair of rollers, . delete The method according to claim 1,
Wherein the forming of the third structure is performed while applying heat at a temperature of 30 to 50 degrees, The method according to claim 6,
Wherein at least one of said at least one pair of rollers comprises a hot line. The method according to claim 1,
Wherein each of the steps is performed according to a reel-to-reel method. A graphene synthesis section for synthesizing graphene on at least one surface of the catalyst metal layer;
A carrier forming portion for attaching a carrier provided with a heat peeling tape having a predetermined peeling temperature to the graphene to form a first structure;
A catalyst metal layer removal step of removing the catalyst metal layer from the first structure to form a second structure;
A pressing portion that forms a third structure by applying pressure to the graphene of the second structure facing the target substrate and attaching the target substrate to the graphene while applying a temperature lower than the peeling temperature; And
And a heater for removing the carrier contained in the third structure by applying a pressure of atmospheric pressure or less and a heat of the peeling temperature or more to the third structure. 12. The method of claim 11,
Wherein the peeling temperature is 80 to 180 degrees. delete 12. The method of claim 11,
Wherein the heating section includes a chamber having an internal temperature equal to or higher than the peeling temperature. 12. The method of claim 11,
Wherein the pressing portion includes at least a pair of rollers. 16. The method of claim 15,
Wherein at least one of said at least one pair of rollers comprises a hot line. delete
KR1020150169267A 2015-11-30 2015-11-30 Method for transferring graphene, graphene transferring apparatus and graphene structure KR101836404B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130220530A1 (en) 2012-02-24 2013-08-29 Kuanping Gong Method of transferring graphene
KR101829095B1 (en) 2011-09-21 2018-02-13 내셔널 유니버시티 오브 싱가포르 Methods of nondestructively delaminating graphene from a metal substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101829095B1 (en) 2011-09-21 2018-02-13 내셔널 유니버시티 오브 싱가포르 Methods of nondestructively delaminating graphene from a metal substrate
US20130220530A1 (en) 2012-02-24 2013-08-29 Kuanping Gong Method of transferring graphene

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