KR101606338B1 - Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same - Google Patents

Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same Download PDF

Info

Publication number
KR101606338B1
KR101606338B1 KR1020140048206A KR20140048206A KR101606338B1 KR 101606338 B1 KR101606338 B1 KR 101606338B1 KR 1020140048206 A KR1020140048206 A KR 1020140048206A KR 20140048206 A KR20140048206 A KR 20140048206A KR 101606338 B1 KR101606338 B1 KR 101606338B1
Authority
KR
South Korea
Prior art keywords
light
nanostructure
substrate
network
shielding layer
Prior art date
Application number
KR1020140048206A
Other languages
Korean (ko)
Other versions
KR20150121943A (en
Inventor
정경호
Original Assignee
인트리 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 인트리 주식회사 filed Critical 인트리 주식회사
Priority to KR1020140048206A priority Critical patent/KR101606338B1/en
Priority to PCT/KR2014/006136 priority patent/WO2015163535A1/en
Priority to JP2016559285A priority patent/JP6342511B2/en
Publication of KR20150121943A publication Critical patent/KR20150121943A/en
Application granted granted Critical
Publication of KR101606338B1 publication Critical patent/KR101606338B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Abstract

A light-transmitting substrate comprising: a light-transmitting substrate; And a light-shielding layer on the substrate, wherein the light-shielding layer includes a light-shielding material that prevents light incident from the outside to the substrate from transmitting through the substrate, and the light- And the pattern is an amorphous photomask, and a method of manufacturing the same.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a photomask for manufacturing a light transmissive conductor having a pattern of nanostructures and a method of manufacturing the same,

The present invention relates to a photomask for producing a light-transmitting conductor and a method of manufacturing the same, and more particularly, to a photomask for manufacturing a light-transmitting conductor having a pattern of a nanostructure and a method of manufacturing the same.

The light-transmitting conductor is a thin conductive film which transmits light in a visible light region and has electrical conductivity. BACKGROUND ART [0002] Light-transmitting conductors have been widely used widely in various electronic apparatuses. For example, a light transmissive conductor is widely used as a transparent electrode in a flat panel display panel such as a flat panel TV or a liquid crystal display of a desktop PC, a touch panel of a tablet PC, a smart phone, an electroluminescent device, or the like.

Such a light-transmitting conductor can be produced by various methods. Conventionally, a light transmitting conductor has been produced using a metal oxide such as indium tin oxide in order to have high light transmittance and conductivity. However, such a metal oxide has a problem that the conductivity is lowered as the light transmittance is increased .

As another method, a method of dispersing a nanostructure such as a carbon nano-tube or a silver nano-wire in a solution and applying it to a substrate has been actively studied. However, this method has a problem that the individual nanostructure units forming the transparent electrode are connected to each other in a state of being in contact with each other, so that the resistance value is lowered and the conductivity is lowered. In addition, since this method requires a dispersion and application process of the nanostructure every time a light transmitting conductor is manufactured, the process is complicated and the nanostructure pattern is different for each individual light transmitting conductor, have.

Recently, attention has been focused on manufacturing a light-transmitting conductor by forming a mesh pattern on a metal by photo lithography. In such photolithography, a photomask having a pattern corresponding to a metal mesh pattern is used, and the pattern of the photomask is formed by using a laser. In this case, a krypton-ion laser or an Nd yag laser is usually used as the laser source. In this case, the wavelength of the laser is 413 nm or 532 nm. Therefore, when such a laser wavelength is used, there is a limit to precise pixel size of the pattern formed on the photomask. Further, in the case of patterning a sloping line, since the laser patterns the sloped lines by repeating vertical and horizontal lines, the line width becomes larger than the wavelength. As a result, it is difficult to form a metal mesh pattern with a high degree of precision by a conventional photomask, thereby causing a visibility problem depending on the viewing distance. Furthermore, when a metal mesh electrode having a regular pattern is formed by a conventional photomask, a moiré phenomenon due to the pattern structure appears.

Accordingly, there is a need to develop a light-transmissive conductor which is excellent in both light transmittance and conductivity, improves the visibility and can prevent the moire phenomenon, as well as a reliable manufacturing method capable of mass-producing such a light- Is emerging.

Patent Registration No. 8049333 of the United States Patent and Trademark Office US Patent Office Registration No. 8604332 Korean Intellectual Property Office Registration No. 10-1328483

The present invention provides a photomask for manufacturing a light transmitting conductor having a pattern of a nanostructure and a method of manufacturing the same.

According to a first aspect of the present invention, there is provided a photomask comprising: a light-transmitting substrate; And a light-shielding layer on the substrate, wherein the light-shielding layer includes a light-shielding material that prevents light incident from the outside to the substrate from transmitting through the substrate, and the light- , And the pattern is amorphous.

In the invention described in claim 2, the light-shielding layer according to claim 1 has a constant thickness.

In the invention described in claim 3, the light-shielding layer according to claim 1 is a single body integrally formed.

In the invention described in claim 4, the nanostructure according to claim 1 is one selected from the group consisting of a nanotube, a nanowire, a nano-fiber, and a mixture thereof.

delete

According to a sixth aspect of the present invention, the pattern according to the first aspect of the present invention includes a plurality of main bodies having a pattern corresponding to each of the nanostructures constituting the nanostructure network; A plurality of intersections where the body portions intersect each other; And an intervening portion between the main body portions.

According to a seventh aspect of the present invention, at least one closed system is formed in which the body portions and the intersections of the sixth aspect are connected to each other so as to include the interposing portion therein.

According to an eighth aspect of the present invention, at least one open system is formed in which the main bodies and the intersections of the sixth aspect are connected so that the inside and the outside are not distinguished from each other.

According to a ninth aspect of the present invention, an end portion of the main body portion is protruded from the intervening portion according to the sixth aspect.

The invention according to claim 10 is characterized in that the width w of the main body according to claim 6 falls within the range of 1 x 10 2 nm ≤ w ≤ 2.5 x 10 3 nm.

In the invention described in claim 11, when the width of the body part according to claim 6 is w and the length of the body part is d, it is characterized by being in the range of 1x10 2 ? D / w? 3x10 3 .

In the invention described in claim 12, wherein the body portion width w as set forth in claim 6, when the length of the body portion d, is characterized in that in the range of from 1x10 2 ≤ d / w ≤ 5x10 6.

According to a thirteenth aspect of the invention, the intersection according to claim 6 has the same thickness as the body part.

According to the invention set forth in claim 14, the body part according to claim 6 is formed such that light incident from the outside to the substrate is not transmitted through the substrate, and the intervening part is formed such that light incident from the outside to the substrate passes through the substrate do.

In the invention described in claim 15, the light emitting device according to claim 6 is formed such that light incident from the outside to the substrate is transmitted through the substrate, and the interposed part is formed so that light incident from the outside to the substrate can not transmit through the substrate .

According to a sixteenth aspect of the present invention, there is provided a method of manufacturing a photomask, comprising the steps of: (1) applying a light-blocking material on a light-transmitting substrate; (2) applying a photosensitive material on the light-blocking material; (3) arranging the nanostructure so as to form a network arranged so that the nanostructures cross the photosensitive material; (4) irradiating light through the nanostructure network to form a shape corresponding to the nanostructure network on the photosensitive material; And forming a light-shielding layer by forming a pattern corresponding to the nanostructure network on the light-blocking material according to the shape of the photosensitive material.

The invention according to claim 17 is characterized in that the nanostructure of step (3) according to claim 16 is one selected from the group consisting of a nanotube, a nanowire and a mixture thereof.

(18) A method of manufacturing a photomask, comprising the steps of: (1) applying a light-blocking material on a light-transmitting substrate; (2) arranging the nanostructure to form a network arranged so that the nanostructures cross the light blocking material; And (3) contacting the corrosive agent through the nanostructure network to form a pattern corresponding to the nanostructure network on the light-shielding material to form the light-shielding layer.

The invention according to claim 19 is characterized in that the nanostructure of step (2) according to claim 18 comprises nanofibers.

According to a twentieth aspect of the present invention, there is provided a method of manufacturing a photomask, comprising the steps of: (1) arranging a nanostructure on a light-transmitting substrate to form a network arranged so that the nanostructures cross each other; (2) coating a light blocking material on the substrate to cover the nanostructure network; And (3) separating the nanostructure network from the substrate to form a pattern having an opening corresponding to the nanostructure network to form the light-shielding layer.

In the invention according to claim 21, the nanostructure of step (2) according to claim 20 comprises a nanofiber.

The present invention can provide a photomask for manufacturing a light-transmitting conductor having a pattern of a nanostructure and a method of manufacturing the same.

1 is a perspective view schematically showing a photomask as Example 1. Fig.
2 is a plan view showing a pattern of the light-shielding layer in the photomask of FIG.
Fig. 3 is a view showing a part of the pattern of the light-shielding layer of Fig. 2. Fig.
4 is a cross-sectional view taken along the line IV-IV in Fig.
5 is a plan view showing a pattern of the light-shielding layer in the photomask as Example 2. Fig.
6 is a plan view showing a pattern of the light-shielding layer in the photomask as Example 3. Fig.
7 is a perspective view showing a state in which a second light shielding layer is provided on a photomask as Example 4;
8 is a plan view showing a pattern of the light-shielding layer in the photomask as Example 5. Fig.
9 is a view showing a part of the pattern of the light-shielding layer in Fig.
10 is a sectional view taken along line XX of Fig.
11A to 11H are diagrams showing a manufacturing method of a photomask as Example 6. Fig.
12A to 12D are diagrams showing a manufacturing method of a photomask as Example 7. Fig.
13A to 13C are diagrams showing a manufacturing method of a photomask as Example 8. Fig.

Specific details for carrying out the invention are described on the basis of practical examples. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, the invention in its broader aspects is not limited to the specific details, representative devices, And the like.

(Example 1)

In this embodiment, as illustrated in FIG. 1, the photomask 100 includes a substrate 110 and a light shielding layer 120.

The photomask 100 refers to a pattern corresponding to a microelectrode pattern to form a microelectrode pattern on a substrate by a photolithography process using an exposure system. Here, the photomask 100 is used to form a fine electrode pattern having a line width corresponding to the line width of the nanostructure.

The substrate 110 is coated or laminated with the light-shielding layer 120 on the substrate 110. The substrate 110 may be rigid or flexible. The substrate 110 has light transmittance. For example, the substrate 110 is formed of a material such as glass or quartz, but is not limited thereto. The substrate 110 has light transmittance. For example, the substrate 110 may be capable of transmitting 90% or more of the light irradiated by the exposure system.

The light shielding layer 120 is formed on the substrate 110 and shields the light incident on the substrate 110 from being transmitted through the substrate 110 from the outside. The light-shielding layer 120 may have a substantially constant thickness. As a result, light passing through the photomask 120 can be precisely controlled, and a precise fine electrode pattern can be formed. The light shielding layer 120 preferably has a substantially constant thickness, but is not limited thereto and any thickness can be used as long as it forms a layer. The light-shielding layer 120 may also be a single unitary body, but is not limited thereto and may not be a single body if it forms a light blocking layer.

The light shielding layer 120 includes a light shielding material. The light-blocking material forming the light-shielding layer 120 may include a metal. For example, the light-shielding layer 120 may be formed of a metal such as chromium, but is not limited thereto. The light blocking material may be coated on the substrate 110 in various ways. For example, the light blocking material can be coated on the substrate 110 by vapor deposition by sputtering. For example, the light shielding layer 120 may be formed of a chromium vapor deposition film having a thickness of 50 nm to 100 nm.

The light shielding layer 120 includes a pattern corresponding to a network formed by arranging the nanostructures to cross each other. The nanostructure may be a nanotube, a nanowire, a nano-fiber, or a mixture thereof. If it is a nanostructure, it includes any substance. For example, carbon nanotubes, silver nanowires, carbon nanofibers and the like can be used as nanostructures. Since the light shielding layer 120 includes a pattern corresponding to a network formed by arranging the nanostructures so as to cross each other, the width of the portion corresponding to each of the nanostructures forming the light shielding layer 120 can be narrowly formed So that a highly minute nano-sized light shielding property can be secured. Accordingly, the light shielding layer 120 can be formed of a conductive material having high conductivity, and at the same time, can form a microelectrode pattern corresponding to a nanostructure network that can ensure high light transmittance.

A pattern corresponding to a network formed by arranging the nanostructures so as to cross each other refers to a pattern formed to correspond to such a network rather than the network itself formed by arranging the nanostructures to cross each other. This pattern has, as exemplarily shown in FIG. 2, a plurality of body portions 121, a plurality of intersection portions 122, and interposing portions 123. The body portion 121 refers to a portion corresponding to the nanostructure of the nanostructure network and the intersection portions 122 refer to a portion formed by crossing the body portions 121. The interposing portion 123 includes a body portion 121, Quot; refers to the portion between the two. The main body part 121 and the intersection part 122 are elements for preventing the light incident from the outside to the substrate 110 from being transmitted through the substrate 110 from the outside, 120 is an element that allows light incident from the outside to the substrate 110 to pass through the substrate 110. The light irradiated by the exposure system can not transmit through the body portion 121 and the intersection portion 122 of the light shielding layer 120 and the interposed portion 123 of the light shielding layer 120 is transmitted. The photomask 100 having the photoresist pattern 120 has a positive photomask 100 to form a microelectrode pattern having a pattern corresponding to the main body 121 and the intersection 122.

The body portions 121a, 121b, 121c and 121d and the intersecting portions 122a, 122b, 122c and 122d can form a closed system 125 which is connected to include an intervening portion 123a therein . Accordingly, since the body portions 121 are connected to each other in a redundant manner, the reliability of the electrical connection between the portions of the fine electrode pattern corresponding to the body portion 121 is improved, thereby effectively preventing the breakage of the fine- . Also, the other body portions 121e, 121f, 121g and other intersections 122e, 122f may form an open system 126 connected so that the inside and the outside are not distinguished. The intervening part 123 can be divided into a closing system intervening part 123a formed by the closing system 125 and an open system intervening part 123b formed by the opening system 126. [ The closed system 125 and the open system 126 may be separated from each other and positioned independently or adjacent to each other. Also, an open system 126 may be located within the enclosure 125, or vice versa, the enclosure 125 may be located within the open system 126. When the nanostructure has finite aspect ratios such as nanotubes or nanowires, the main body 121 formed by using the nanostructure-based network may have the end portion 124. The end portion 124 of the main body portion 121 can protrude from the closing system interposing portion 123a or the open system interposing portion 123b.

As shown in FIG. 3, the width w 1 of the main body 121 may be variously formed depending on what the network of the nanostructure is formed. Here, the width w 1 of the body portion may mean the actual width of the body portion 121 or an average thereof. The length w 1 of the main body 121 may be differently formed depending on the case of using the nanotube as a nanostructure constituting the nanostructure network, the case of using a nanowire or the case of using a nanofiber have. Further, even when the nanostructure network is formed of a single kind of nanostructure, the width w 1 of the body 121 can be variously formed. For example, the width w 1 of the body portion 121 may be in the range of 1 × 10 2 nm <w 1 ≦ 2.5 × 10 3 nm. Further, for example, the thickness of the body portion 121 may be 50 nm to 100 nm.

As shown in FIGS. 2 and 3, the length d 1 of the main body 121 may be variously formed depending on what the network of the nanostructure is formed. Here, the length d 1 of the main body 121 may mean the actual length of the main body 121 or an average thereof. The length d 1 of the main body 121 is determined depending on the case of using the nanotube as a nanostructure constituting the nanostructure network, the case of using a nanowire or the case of using a nanofiber, The length d 1 may be formed differently. Furthermore, even when the nanostructure network is formed as a single type of nanostructure, the length d 1 of the body 121 can be variously formed. The length d 1 of the main body 121 may be related to the width w 1 of the main body depending on what the network of the nanostructure is formed. For example, when the body portion 121 is formed by constructing the nanostructure network with nanowires, when the width of the body portion 121 is w 1 and the length of the body portion 121 is d 1 , 1 × 10 2 ≤ d 1 / w 1 ? 3x10 3 . Further, for example, the time when to configure the nanostructure network to the nanofibers to form a main body 121, and the width of the body portion 121, w 1, the length of the main body 121 d 1 il, 1x10 2 &Lt; / = d 1 / w 1 5 x 10 6 .

The relationship between the width and the length of the main body 121 can be substantially determined by the aspect ratio A of the nanostructure constituting the nanostructure network (that is, the ratio of the length of the nanostructure to the average diameter of the nanostructure) have. For example, the aspect ratio A of the nanostructure when using the nanowires as the nanostructure constituting the nanostructure network may be a 1x10 2 <A <3x10 3, the aspect ratio A of the nanostructure when using the nanofibers in the nanostructure is 1x10 2 < A &lt; / RTI &gt; However, the relationship between the width and the length of the main body 121 is not limited to this.

On the other hand, the intersection portion 122 may have substantially the same thickness as the body portion 121, as exemplarily shown in Figs. 3 and 4. The pattern of the light shielding layer 120 can be formed as a single body and the pattern of the microelectrode portion corresponding to the intersection portion 122 can be formed to have the same thickness as the pattern of the microelectrode portion corresponding to the body portion 121 So that it is possible to prevent an increase in resistance in the pattern of the portion of the fine electrode corresponding to the intersection portion 122.

The size and shape of the region of the interposer 123 can be variously formed. For example, the size and shape of the region of the interposer 123 can be substantially determined by the distance between the body portions 121. The size of the region of the interposer 123 can be adjusted according to how the nanostructure network is constructed and the nanostructure network can be configured to correspond to the aperture ratio of the microelectrode pattern to be formed by the photomask 100 have.

The pattern of the light-shielding layer 120 may be amorphous. When a fine electrode pattern is formed using the light-shielding layer 120 having an amorphous pattern, an amorphous microelectrode pattern can be formed, and a moire phenomenon in which stripes are seen due to the repetition of the patterned microelectrode pattern Can be prevented. However, the pattern of the light-shielding layer is not limited to amorphous, and any structure may be used as long as it includes a pattern corresponding to the network formed by arranging the nanostructures crossing each other.

(Practical example 2)

5, the light shielding layer 220 formed on the substrate 210 of the photomask 200 is patterned so as to correspond to a network formed by arranging the nanostructures so as to cross each other The main body portion 221 continuously extends from one edge of the light shielding layer 220 to the other edge so that the main body 221 and the intersecting portion 222 are formed in the pattern, Is not present.

The reliability of the connection of the light-shielding layer 220 by the main body 221 and the intersection 222 can be further ensured and the shielding portion such as the end of the main body 221 does not exist, 220 can be reliably secured and the electrostatic phenomenon at the ends can be prevented.

The light-shielding layer 220 pattern of this embodiment can be formed very easily by using a nanofiber having a very high aspect ratio with a nanostructure.

(Example 3)

6, the shielding layer 320 formed on the substrate 310 of the photomask 300 is patterned so as to have a pattern corresponding to the network formed by arranging the nanostructures to cross each other The intersection portion 322 and the end portion 324 of the main body portion 321 but the main body portion 321 is continuously extended from one edge of the light shielding layer 320 to the other edge The main body portions 321a, 321b and 321c and the intersecting portions 322a and 322b may form an open system 326 connected so that the inside and the outside are not distinguished from each other, And the portions 322 do not form a closed system that is connected to include the interposing portion 323 therein.

This makes it possible to form a pattern that can secure the reliability of the light-shielding layer connection even when a nano structure having a small aspect ratio is used.

The light-shielding layer 320 pattern of this embodiment can be formed very easily by using nanotubes and nanotubes or nanowires whose aspect ratio is smaller than that of the nanofibers.

(Example 4)

7, the light shielding layer 420 of the photomask 400 is formed with a terminal portion for forming a terminal portion pattern connected to the fine electrode pattern formed by the photomask 400. In this embodiment, A light-shielding layer 430 is further provided. The terminal-side light-shielding layer 430 includes a light-shielding material for preventing light incident from the outside to the substrate 410 from being transmitted through the substrate 410, as in the light-blocking layer 420, and includes a pattern corresponding to the terminal portion pattern.

Accordingly, the photomask 400 can simultaneously form a fine electrode pattern formed by the light shielding layer 420 and a terminal portion pattern formed by the terminal shielding layer 430.

The pattern of the terminal portion shielding layer 430 includes a plurality of body portions 431 connected to the plurality of shielding portions 427 of the light shielding layer 420 and a second intervening portion 433 therebetween, And further includes a plurality of connection portions 432 connected to the plurality of light-shielding portions 427.

(Example 5)

8 to 10, the light shielding layer formed on the substrate 510 of the photomask 500 is patterned so that the nanostructures are arranged so as to intersect with each other to form a pattern corresponding to the network Respectively. This pattern has a plurality of body portions 521, a plurality of intersection portions 522, and intervening portions 523. The body portions 521 correspond to the nano structure of the nanostructure network and the intersections 522 are formed by intersecting the body portions 521. The interposing portions 523 are formed between the body portions 521 . The main body 521 and the intersection 522 are formed such that light incident from the outside to the substrate 510 is transmitted through the substrate 510 and the intervening portion 523 is incident on the substrate 510 from the outside So that light can not pass through the substrate 510. Therefore, the light irradiated by the exposure system transmits the main body portion 521 and the intersection 522 of the light shielding layer, and the light shielding layer interposed portion 523 is not transmitted. Therefore, the photomask 500 having such a light shielding layer forms a fine electrode pattern having a pattern corresponding to the body portion 521 and the intersection 522 as a negative photomask 500.

The body portions 521a, 521b, 521c, and 521d and the intersections 522a, 522b, 522c, and 522d may form a closed system 525 that is connected to include the interposing portion 523a therein . The other body portions 521e, 521f, and 521g and other intersections 522e and 522f may form an open system 526 that is connected so that the inside and the outside are not distinguished from each other. The intervening part 523 can be divided into a closing system intervening part 523a formed by the closing system 525 and an open system intervening part 523b formed by the opening system 526. [ The closed system 525 and the open system 526 may be separated from each other and positioned independently or adjacent to each other. Also, an open system 526 may be located within the closed system 525, or vice versa, the closed system 525 may be located within the open system 526.

The width w 2 of the main body portion 521 may be variously formed depending on what the network of the nanostructure is formed, for example, as shown in FIG. Here, the width w 2 of the main body portion may mean the actual width of the main body portion 521 or an average thereof. The length w 2 of the main body portion 521 may be differently formed depending on the case of using the nanotube as the nanostructure constituting the nanostructure network, the case of using the nanowire or the case of using the nanofiber have. Further, even when the nanostructure network is formed into a single kind of nanostructure, the width w 2 of the body portion 521 can be variously formed. For example, the width w 2 of the body portion 521 may be in the range of 1 × 10 2 nm <w 2 ≦ 2.5 × 10 3 nm. Further, for example, the thickness of the body portion 521 may be 50 nm to 100 nm.

The length d 2 of the main body portion 521 may be variously formed depending on what the network of the nanostructure is formed as shown in FIGS. 8 and 9 by way of example. Here, the length d 2 of the main body portion 521 may mean the actual length of the main body portion 521 or an average thereof. The length d 2 of the main body portion 521 may be different depending on the case of using the nanotube as the nanostructure constituting the nanostructure network, the case of using the nanowire, or the case of using the nanofiber have. Further, even when the nanostructure network is formed of a single kind of nanostructure, the length d 2 of the body portion 521 can be variously formed. The length d 2 of the main body portion 521 may be related to the width w 2 of the main body portion depending on what the network of the nanostructure is formed. For example, when the main body portion 521 is formed by constructing the nanostructure network with nanowires, when the width of the main body portion 521 is w 2 and the length of the main body portion 521 is d 2 , 1 × 10 2 ≦ d of 2 / w 2 ≤ 3x10 3 may be in the range. Further, for example, the time when to configure the nanostructure network to the nanofibers to form a body portion 521, and the width of the body part 521 w 2, the length of the body portion 521 d 2 il, 1x10 2 ≤ d 2 / w may be in the range of 2 ≤ 5x10 6.

The relationship between the width and the length of the body portion 521 can be substantially determined by the aspect ratio A of the nanostructure constituting the nanostructure network (that is, the ratio of the length of the nanostructure to the average diameter of the nanostructure) have. For example, the aspect ratio A of the nanostructure when using the nanowires as the nanostructure constituting the nanostructure network may be a 1x10 2 <A <3x10 3, the aspect ratio A of the nanostructure when using the nanofibers in the nanostructure is 1x10 2 < A &lt; / RTI &gt; However, the relationship between the width and the length of the main body portion 521 is not limited to this.

(Example 6)

In this embodiment, a method of manufacturing a positive photomask using a photosensitive material is illustrated, as exemplarily shown in Figs. 11A to 11H.

In this embodiment, the light shielding material 620 is first applied on the light transmitting substrate 610 (Fig. 11A). Here, the light shielding material 620 may be a metal having good light shielding properties such as chromium. The light shielding material 620 may be applied on the substrate 620 by various methods such as spin coating, plating, and deposition. Next, a photosensitive material 630 is coated on the light shielding material 620 (FIG. 11B). The photosensitive material 630 may include various photosensitive materials including a photosensitive polymer. The photosensitive material 630 may be applied on the light blocking material 620 by various methods such as a printing method. After the photosensitive material 630 is applied, the nanostructures are arranged to form a network 640 arranged so that the nanostructures cross the upper surface thereof (FIG. 11C). As the nanostructure, nanotubes, nanowires, nano-fibers, or a mixture thereof can be used. Next, the nanostructure network 640 is used to form a shape corresponding to the nanostructure network 640 in the photosensitive material 630 (FIG. 11D). At this time, the photosensitive material 630 may be exposed to the light source 650 through the nanostructure network 640 to form a shape corresponding to the nanostructure network 640 in the photosensitive material 630. Then, the developer is developed to form a shape corresponding to the nanostructure network 640 by spraying the developer with an apparatus such as the nozzle 660 (FIG. 11E). The light blocking material 620 may be patterned in a pattern corresponding to the nanostructure network 640 by spraying the etchant onto the developed photosensitive material 630 with a shape corresponding to the nanostructure network 640, (Fig. 11 (f)). At this time, the pattern is preferably an amorphous pattern corresponding to the nanostructure network 640. Next, the photosensitive material 630 remaining on the upper surface of the light-blocking material 620 having a pattern corresponding to the nanostructure network 640 is peeled off using a device such as a nozzle 680 (Fig. 11G). The photomask 600 having the light shielding layer 650 formed on the substrate 610 is completed through the above process (FIG. 11H).

A step of forming a terminal portion shading layer (not shown) connected to the shading layer 650 on the substrate 610, for example, on the substrate 610 corresponding to the outside of the edge of the shading layer 650 can do. The terminal portion shielding layer is a portion corresponding to the terminal portion pattern connected to the fine electrode pattern when the fine electrode pattern is formed using the photomask 600.

(Example 7)

In this embodiment, a method of manufacturing a positive photomask without using a photosensitive material is shown, as exemplarily shown in Figs. 12A to 12D.

In this embodiment, the light shielding material 720 is applied on the light transmitting substrate 710 first (12a). The light blocking material 720 uses a material that can block light from the exposure system, such as chromium. The light shielding material 720 is applied by various methods such as spin coating, printing, and evaporation. Next, the nanostructures are arranged to form a network 730 arranged so that the nanostructures cross over the light blocking material 720 (FIG. 12B). As the nanostructure, any one of a nanotube, a nanowire, a nanofiber, or a mixture thereof is used. Considering that no photosensitive material is used, it is preferable to use a nanofiber as the nanostructure. When a nanofiber is used as the nanostructure, a reflow process can be performed so that the nanofibers are stably arranged on the light-blocking material 720. Then, a corrosive agent is contacted through the nanostructure network 730 to form a pattern corresponding to the nanostructure network 730 in the light-blocking material 720 (FIG. 12C). The caustic is sprayed onto the substrate 710 on the nanostructure network 730 with an injector 770. After the pattern corresponding to the nanostructure network 730 is formed on the light shielding material 720, the light shielding layer 740 is formed by peeling the nanostructure network 730 to complete the positive photomask 700 12d).

(Example 8)

In this embodiment, as shown in Figs. 13A to 13C, a method of manufacturing a negative photomask without using a photosensitive material is shown.

In this embodiment, first, the nanostructure is arranged so as to form a network 820 arranged so that the nanostructures cross the light-transmitting substrate 810 (FIG. 13A). As the nanostructure, any one of a nanotube, a nanowire, a nanofiber, or a mixture thereof is used. Considering that no photosensitive material is used, it is preferable to use a nanofiber as the nanostructure. When a nanofiber is used as the nanostructure, a reflow process may be performed so that the nanofibers are stably arranged on the substrate 810. Next, the light shielding material 830 is coated on the substrate 810 so as to cover the nanostructure network 820 (FIG. 13B). Light blocking material 830 uses materials that can block light from the exposure system, such as chromium. The light shielding material 830 is applied by various methods such as spin coating, printing, and evaporation. Thereafter, the nanostructure network 820 is separated from the substrate 810 to form a pattern having an opening corresponding to the nanostructure network 820 to form the light-shielding layer 840 (FIG. 13C). Thereby, the negative photomask 800 is completed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Is possible. Accordingly, the scope of protection of the present invention is defined by the technical idea of the appended claims.

INDUSTRIAL APPLICABILITY The present invention can be applied to a field to which a photomask for manufacturing a light-transmitting conductor and a manufacturing method thereof are applied.

100, 200, 300, 400, 500, 600, 700, 800: Photomask
110, 210, 310, 410, 510, 610, 710, 810:
120, 220, 320, 420, 840: Shading layer
121, 221, 321, 521:
122, 222, 322, 522:
123, 323:
124, 324: end
427:
430: terminal portion shielding layer
520, 620, 720, 830: Light blocking material
630: Photosensitive material

Claims (21)

A light transmitting substrate; And
And a light shielding layer on the substrate,
Wherein the light-shielding layer includes a light-shielding material that prevents light incident on the substrate from being transmitted from the outside to the substrate,
Wherein the light-shielding layer includes a pattern corresponding to a network of nanostructures formed by arranging the nanostructures so as to cross each other,
Wherein the pattern is amorphous. The method according to claim 1,
Wherein the light-shielding layer has a constant thickness. The method according to claim 1,
Wherein the light-shielding layer is a single unitary body. The method according to claim 1,
Wherein the nanostructure is one selected from the group consisting of a nanotube, a nanowire, a nano-fiber, and a mixture thereof. delete [2] The method according to claim 1,
A plurality of body parts having a pattern corresponding to each of the nanostructures constituting the nanostructure network;
A plurality of intersections where the body portions intersect each other; And
And an intervening portion between the main body portions. The method of claim 6,
Wherein the body portions and the intersections form at least one enclosure that is internally connected to include the interposer. The method of claim 6,
Wherein the body portions and the intersections form at least one open system connected so that the inside and the outside are not distinguished. The method of claim 6,
And the end portion of the main body portion protrudes from the interposing portion. The method of claim 6,
And the width w of the body portion falls within a range of 1 x 10 2 nm? W? 2.5 x 10 3 nm. The method of claim 6,
And this width w of the main body, when the length of the body portion is d, the photomask in the range of from 1x10 2 ≤ d / w ≤ 3x10 3. The method of claim 6,
And this width w of the main body, when the length of the body portion is d, the photomask in the range of from 1x10 2 ≤ d / w ≤ 5x10 6. The method of claim 6,
Wherein the intersection has the same thickness as the body portion. The method of claim 6,
Wherein the main body is formed such that light incident from the outside to the substrate is not transmitted through the substrate, and the intervening portion is formed such that light incident from the outside to the substrate passes through the substrate. The method of claim 6,
Wherein the main body is formed such that light incident from the outside to the substrate is transmitted through the substrate, and the intervening portion is formed so that light incident from the outside to the substrate can not pass through the substrate. (1) applying a light-shielding material on a light-transmitting substrate;
(2) applying a photosensitive material on the light-blocking material;
(3) arranging the nanostructure so as to form a network arranged so that the nanostructures cross the photosensitive material;
(4) irradiating light through the nanostructure network to form a shape corresponding to the nanostructure network on the photosensitive material; And
(5) forming a light-shielding layer by forming a pattern corresponding to the nanostructure network on the light-blocking material according to the shape of the photosensitive material. 18. The method of claim 16,
Wherein the nanostructure in step (3) is one selected from the group consisting of nanotubes, nanowires, and mixtures thereof. (1) applying a light-shielding material on a light-transmitting substrate;
(2) arranging the nanostructure to form a network arranged so that the nanostructures cross the light-blocking material; And
(3) contacting a corrosive agent through the nanostructure network to form a pattern corresponding to the nanostructure network on the light-blocking material to form a light-shielding layer. 19. The method of claim 18,
Wherein the nanostructure in step (2) comprises nanofibers. (1) arranging the nanostructure to form a network arranged so that the nanostructures cross the light-transmitting substrate;
(2) coating a light blocking material on the substrate to cover the nanostructure network; And
(3) separating the nanostructure network from the substrate to form a pattern having an opening corresponding to the nanostructure network to form a light-shielding layer. The method of claim 20,
Wherein the nanostructure in step (2) comprises nanofibers.
KR1020140048206A 2014-04-22 2014-04-22 Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same KR101606338B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020140048206A KR101606338B1 (en) 2014-04-22 2014-04-22 Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same
PCT/KR2014/006136 WO2015163535A1 (en) 2014-04-22 2014-07-09 Photomask for manufacturing light-transmitting conductor having nanostructured pattern and method for manufacturing same
JP2016559285A JP6342511B2 (en) 2014-04-22 2014-07-09 PHOTOMASK FOR MANUFACTURING LIGHT TRANSMITTING CONDUCTOR WITH NANOSTRUCTURED PATTERN AND METHOD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140048206A KR101606338B1 (en) 2014-04-22 2014-04-22 Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same

Publications (2)

Publication Number Publication Date
KR20150121943A KR20150121943A (en) 2015-10-30
KR101606338B1 true KR101606338B1 (en) 2016-03-24

Family

ID=54332678

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140048206A KR101606338B1 (en) 2014-04-22 2014-04-22 Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same

Country Status (3)

Country Link
JP (1) JP6342511B2 (en)
KR (1) KR101606338B1 (en)
WO (1) WO2015163535A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108132582B (en) * 2016-12-01 2020-06-09 清华大学 Photoetching mask plate
CN108132585B (en) * 2016-12-01 2020-02-07 清华大学 Preparation method of micro-nano structure
CN108132579B (en) * 2016-12-01 2020-09-25 清华大学 Photoetching mask plate
CN108132581B (en) * 2016-12-01 2020-07-10 清华大学 Photoetching mask plate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008275934A (en) * 2007-04-27 2008-11-13 Hoya Corp Photomask blank and method for manufacturing photomask

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625241A (en) * 1985-06-29 1987-01-12 Oki Electric Ind Co Ltd Production of photomask
JPH0619118A (en) * 1992-07-03 1994-01-28 Fujitsu Ltd Exposing mask and pattern forming method
JP3164208B2 (en) * 1998-03-26 2001-05-08 日本電気株式会社 Method of manufacturing single electronic device
US6509619B1 (en) * 1999-09-10 2003-01-21 Starmega Corporation Strongly textured atomic ridge and dot Mosfets, sensors and filters
KR20060065305A (en) * 2004-12-10 2006-06-14 삼성코닝 주식회사 Photo mask and method for emi filter thereby
SG183720A1 (en) * 2005-08-12 2012-09-27 Cambrios Technologies Corp Nanowires-based transparent conductors
KR100730217B1 (en) * 2006-03-28 2007-06-19 삼성에스디아이 주식회사 Method of manufacturing plasma display panel and photomask to be used in that method
US8641912B2 (en) * 2007-05-23 2014-02-04 California Institute Of Technology Method for fabricating monolithic two-dimensional nanostructures
JP5430921B2 (en) * 2008-05-16 2014-03-05 富士フイルム株式会社 Conductive film and transparent heating element
WO2010018733A1 (en) * 2008-08-11 2010-02-18 コニカミノルタホールディングス株式会社 Transparent electrode, organic electroluminescent element, and method for producing transparent electrode
JP2012028183A (en) * 2010-07-23 2012-02-09 Fujifilm Corp Conductive material and touch panel and display device with touch panel function
KR101215299B1 (en) * 2010-12-30 2012-12-26 포항공과대학교 산학협력단 Nano imprint mold manufacturing method, light emitting diode manufacturing method and light emitting diode using the nano imprint mold manufactured by the method
JP2012185770A (en) * 2011-03-08 2012-09-27 Sony Corp Transparent electrode element, information input device, and electronic apparatus
KR101586902B1 (en) * 2014-04-09 2016-01-19 인트리 주식회사 Light transmitting conductor comprising pattern of nanostructure and method of manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008275934A (en) * 2007-04-27 2008-11-13 Hoya Corp Photomask blank and method for manufacturing photomask

Also Published As

Publication number Publication date
KR20150121943A (en) 2015-10-30
WO2015163535A1 (en) 2015-10-29
JP6342511B2 (en) 2018-06-13
JP2017514164A (en) 2017-06-01

Similar Documents

Publication Publication Date Title
KR101606338B1 (en) Photomask for manufacturing light transmitting conductor comprising nano-structured pattern and method of manufacturing the same
TWI584059B (en) Method for manufacturing transparent photomask, transparent photomask manufactured by the method and method for manufacturing conductive mesh pattern using the transparent photomask
KR102187929B1 (en) Touch window and display with the same
US10470301B2 (en) Method for manufacturing conductive pattern and conductive pattern formed substrate
TWI549047B (en) Touch panels and fabrication methods thereof
TWI503875B (en) Patterned transparent conductive film
US10932364B2 (en) Transparent conductive film
KR101586902B1 (en) Light transmitting conductor comprising pattern of nanostructure and method of manufacturing the same
KR102200954B1 (en) Cover for Touch Screen Panel, Manufacturing Method of Cover for Touch Screen Panel and Touch Screen Panel comprising the Cover Film
KR20170058895A (en) Light transmitting conductor comprising nano-fiber pattern and method of manufacturing the same
KR102306428B1 (en) Conductive pattern
KR20130033538A (en) Method for manufacturing transparent electrode film
KR101309858B1 (en) Printing Plate and Method of Manufacturing Liquid Crystal Display Device using the same
KR101739726B1 (en) Method of manufacturing light transmitting conductor comprising nano-fiber pattern
KR101323340B1 (en) Electrode fabricating method
US11163197B2 (en) Substrate
KR101632346B1 (en) Mesh type conductive film and method of fabricating the same
KR20130072922A (en) Transparent electrode and method for making the same
KR20180086586A (en) Manufacturing method of conducting pattern
KR101650393B1 (en) Transparent electrode based on metal material having low reflection rate and method for fabricating the transparent electrode
KR102303064B1 (en) Touch window
KR101687992B1 (en) Photomask for manufacturing light transmitting conductor comprising nano-fiber pattern and method of manufacturing the same
KR102175761B1 (en) Touch window
KR20130074880A (en) Transparent electrode and method for making the same
KR20150101847A (en) Touch window and display with the same

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20190213

Year of fee payment: 4