JPS61140182A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPS61140182A JPS61140182A JP26356584A JP26356584A JPS61140182A JP S61140182 A JPS61140182 A JP S61140182A JP 26356584 A JP26356584 A JP 26356584A JP 26356584 A JP26356584 A JP 26356584A JP S61140182 A JPS61140182 A JP S61140182A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- gate electrode
- pressure sensor
- area
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- 230000005669 field effect Effects 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000000741 silica gel Substances 0.000 abstract description 3
- 229910002027 silica gel Inorganic materials 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えばＭＯ５型電界効果型トランジスタ（
以下ＦＥＴと記す）を用いた圧力センサに関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] This invention is applicable to, for example, an MO5 field effect transistor (
The present invention relates to a pressure sensor using a FET (hereinafter referred to as FET).
一般に、圧力センサは液体、あるいは気体の圧力を測定
するためのものであるが、この圧力センサとして、従来
、差動トランス等を用いた電気式のもの、あるいはダイ
ヤフラム等を用いた機械式のものがあった。Generally, pressure sensors are used to measure the pressure of liquids or gases, and conventional pressure sensors are electrical types using differential transformers, etc., or mechanical types using diaphragms etc. was there.
上記従来の圧力センサは、いずれも構造が複雑で、しか
も検出精度は低いものであった。All of the conventional pressure sensors described above have complicated structures and have low detection accuracy.
本発明は、係る従来の状況に鑑みてなされたもので、簡
単な構造でしかも高感度であり、上記従来の圧力センサ
とは全く異なる構造の圧力センサを提供することを目的
としている。The present invention has been made in view of the conventional situation, and an object of the present invention is to provide a pressure sensor having a simple structure, high sensitivity, and a structure completely different from the above-mentioned conventional pressure sensor.
本発明に係る圧力センサは、圧力伝達部をＦＥＴのゲー
ト電極に接して配設したものである。The pressure sensor according to the present invention has a pressure transmitting section disposed in contact with a gate electrode of an FET.
本発明に係る圧力センサでは、ソース、ドレイン間を流
れる電流は、ゲート電極に圧力が作用した場合の方が作
用していない場合より大きくなり、従って上記電流を検
出することにより圧力を検出できることとなる。In the pressure sensor according to the present invention, the current flowing between the source and the drain is larger when pressure is applied to the gate electrode than when no pressure is applied, and therefore pressure can be detected by detecting the current. Become.
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
この発明は、ｎチャネルのＭＯ３型ＦＥＴに最もよく通
用できるので、これによって説明する。Since this invention is most applicable to an n-channel MO3 type FET, it will be explained using this.
第１図は本発明の一実施例によるＭＯ３型ＦＥＴを用い
た圧力センサの断面図である。図において、１はｐ型の
シリコン半導体基板、２はｎ十拡散屡からなるソース、
３はｎ十拡散層からなるドレイン、４は半導体基板１の
上記ソース２．ドレイン３間上に形成されたゲート絶縁
膜、５は該ゲート絶縁膜４の上に形成されたゲート電極
である。FIG. 1 is a sectional view of a pressure sensor using an MO3 type FET according to an embodiment of the present invention. In the figure, 1 is a p-type silicon semiconductor substrate, 2 is a source made of n10 diffusion,
Reference numeral 3 denotes a drain made of an n10 diffusion layer, and reference numeral 4 denotes the source 2 of the semiconductor substrate 1. A gate insulating film 5 is formed between the drains 3 and a gate electrode 5 is formed on the gate insulating film 4.
６は上記ソース２に接続されたソース端子で、これには
電圧Ｖｓｓ（＝ＯＶ）が印加されている。７は上記ドレ
イン３に接続されたドレイン端子で、これにはドレイン
電圧ＶＤＳが印加されている。８はゲート電極５に接続
されたゲート端子で、これにはゲート電圧ＶＧＳが印加
されている。6 is a source terminal connected to the source 2, to which a voltage Vss (=OV) is applied. Reference numeral 7 denotes a drain terminal connected to the drain 3, to which a drain voltage VDS is applied. 8 is a gate terminal connected to the gate electrode 5, to which a gate voltage VGS is applied.
９は上記ゲート電極５上に接して形成された圧力伝達部
で、これは例えばシリカゲルを用いて円錐台状に形成さ
れている。該圧力伝達部９の面積の小さい下面１０はゲ
ート電極５に接しており、また面積の大きい上面１１に
は外からの圧力Ｐが印加される。Reference numeral 9 denotes a pressure transmitting portion formed in contact with the gate electrode 5, and this is formed in the shape of a truncated cone using, for example, silica gel. A lower surface 10 having a small area of the pressure transmitting portion 9 is in contact with the gate electrode 5, and an external pressure P is applied to an upper surface 11 having a large area.
次に本実施例の作用効果を説明する。Next, the effects of this embodiment will be explained.
第２図（ａ）、 （ｂ）は、横軸にドレイン端子７に印
加されるドレイン電圧ＶＤＳをとり、縦軸にソース端子
６とドレイン端子７の間を流れるドレイン電流ＩＤをと
ってゲート端子８に印加されるゲート電圧ＶＧＳをパラ
メータとした時のＩｎ−ＶＤＳ特性を示す、そして第２
図（ａ）は圧力伝達部９の上面１１に印加される圧力Ｐ
がゼロの時のＩＤ−１７ＤＳ特性を示し、第２図山）は
圧力Ｐが加わっている時のＩＤ−ＶＯ５特性を示し、ま
た両図において特性曲線Ａ〜Ｆは各々上記ゲート電圧Ｖ
ＧＳが０．０．５．１．０．１．５゜２．０，２゜５■
の場合のＩＤ−ＶＤＳ特性を示している。In FIGS. 2(a) and (b), the horizontal axis represents the drain voltage VDS applied to the drain terminal 7, and the vertical axis represents the drain current ID flowing between the source terminal 6 and the drain terminal 7, and the gate terminal 8 shows the In-VDS characteristics when the gate voltage VGS applied to the second
Figure (a) shows the pressure P applied to the upper surface 11 of the pressure transmitting section 9.
Figure 2 shows the ID-17DS characteristics when P is zero, and the curves A to F in both figures show the ID-VO5 characteristics when the pressure P is applied.
GS is 0.0.5.1.0.1.5゜2.0, 2゜5■
It shows the ID-VDS characteristics in the case of .
第２図（ａｌと（ｂ）とを比較すれば明らかなように、
圧力Ｐの有無によってドレイン電流１０は〜Ｏ０５ｍＡ
のオーダで大きくなっていることがわかる。As is clear from comparing Figure 2 (al and (b)),
Depending on the presence or absence of pressure P, the drain current 10 is ~O05mA
It can be seen that the size is on the order of .
従って、第１図に示す本実施例の圧力センサによれば、
機械的パラメータである圧力Ｐが電気的パラメータであ
るドレイン電流ＩＤに変換されるので、ドレイン電流１
０の変化を検出することによって圧力を検出することが
できる。そしてこの場合、本実施例では圧力が印加され
る上面１１の面積より下面１０の面積が小さくなってい
るので、外部圧力Ｐはゲート電極５上に拡大されて伝達
されることとなり、圧力Ｐが小さい場合でも高い感度で
もって圧力を検出できる。Therefore, according to the pressure sensor of this embodiment shown in FIG.
Since the pressure P, which is a mechanical parameter, is converted to the drain current ID, which is an electrical parameter, the drain current 1
Pressure can be detected by detecting a change in zero. In this case, in this embodiment, since the area of the lower surface 10 is smaller than the area of the upper surface 11 to which pressure is applied, the external pressure P is expanded and transmitted onto the gate electrode 5, and the pressure P is Pressure can be detected with high sensitivity even when it is small.
また、本実施例では、圧力伝達部９をパシベーションと
略同じ材質のシリカゲルでもって形成したので、圧力伝
達部９と該ＦＥＴとのマツチングがよく、この点からも
圧力検出の感度を向上できる。Further, in this embodiment, since the pressure transmitting section 9 is formed of silica gel, which is substantially the same material as the passivation material, the pressure transmitting section 9 and the FET are well matched, and from this point as well, the sensitivity of pressure detection can be improved.
さらにまた、第１図に示すシリコン半導体基板１の上に
ＭＯＳトランジスタをもとにした半導体集積回路を同時
形成することは容易であるから、本実施例は例えば圧力
Ｐの変化をデータ処理する論理機能を圧力センサと同一
チップに構成することができるという利点をもっている
。Furthermore, since it is easy to simultaneously form a semiconductor integrated circuit based on MOS transistors on the silicon semiconductor substrate 1 shown in FIG. It has the advantage that the functions can be configured on the same chip as the pressure sensor.
なお、上記実施例では圧力伝達部９の上面１１を下面１
０より大きくしたが、これとは逆に下面を上面より大き
くすることもでき、このようにすれば、圧力は縮小して
ゲート電極に伝達されるので、大きな圧力の場合でもＦ
ＥＴが破損することはなく、大きな圧力を検出できる。In the above embodiment, the upper surface 11 of the pressure transmitting section 9 is replaced by the lower surface 1.
Although it is made larger than 0, it is also possible to make the bottom surface larger than the top surface. In this way, the pressure is reduced and transmitted to the gate electrode, so even in the case of large pressure, F
The ET will not be damaged and can detect large pressures.
また上記実施例では、ＦＥＴがｎチャネルのＭＯ３Ｉ−
ランジスタである場合について述べたが、本発明はＦＥ
ＴがｐチャネルのＭｏＳトランジスタ、さらには他の構
成から成るＦＥＴの場合にも適用できることはいうまで
もない。Furthermore, in the above embodiment, the FET is an n-channel MO3I-
Although the case where it is a transistor has been described, the present invention
It goes without saying that the present invention can also be applied to a MoS transistor where T is a p-channel, or to an FET having other configurations.
以上のように、この発明に係る圧力センサによれば、圧
力伝達部をＦＥＴのゲート電極の上に接して形成したの
で、簡単な構成により、圧力をドレイン電流の変化量に
変換して高感度に検出できる効果がある。As described above, according to the pressure sensor according to the present invention, since the pressure transmitting part is formed in contact with the gate electrode of the FET, the pressure can be converted into the amount of change in the drain current with a simple configuration, resulting in high sensitivity. has a detectable effect.
第１図は本発明の一実施例による圧力センサの断面図、
第２図（ａ）、 （ｂ）はそれぞれ上記実施例の効果を
説明するためのｒＤ−ＶＤＳ特性図である。
図において、１はｐ型のシリコン半導体基板、２はソー
ス、３はドレイン、４はゲート絶縁膜、５はゲート電極
、９は圧力伝達部である。FIG. 1 is a sectional view of a pressure sensor according to an embodiment of the present invention;
FIGS. 2(a) and 2(b) are rD-VDS characteristic diagrams for explaining the effects of the above embodiment, respectively. In the figure, 1 is a p-type silicon semiconductor substrate, 2 is a source, 3 is a drain, 4 is a gate insulating film, 5 is a gate electrode, and 9 is a pressure transmission section.
Claims (4)
絶縁膜を介してゲート電極が形成されてなる電界効果ト
ランジスタと、上記ゲート電極に接して配設された圧力
伝達部とを備えたことを特徴とする圧力センサ。(1) A field effect transistor comprising a gate electrode formed between the source and drain regions of a semiconductor substrate with a gate insulating film interposed therebetween, and a pressure transmission section disposed in contact with the gate electrode. Features of pressure sensor.
が印加される上面の面積がゲート電極に接する下面の面
積より大きくなる向きに配設されていることを特徴とす
る特許請求の範囲第１項記載の圧力センサ。(2) The pressure transmission section is shaped like a truncated cone, and is arranged in such a direction that the area of the upper surface to which pressure is applied is larger than the area of the lower surface in contact with the gate electrode. The pressure sensor according to item 1.
が印加される上面の面積がゲート電極に接する下面の面
積より小さくなる向きに配設されていることを特徴とす
る特許請求の範囲第１項記載の圧力センサ。(3) A patent claim characterized in that the pressure transmitting section is shaped like a truncated cone and is arranged in such a direction that the area of the upper surface to which pressure is applied is smaller than the area of the lower surface in contact with the gate electrode. The pressure sensor according to item 1.
ていることを特徴とする特許請求の範囲第１項ないし第
３項のいずれかに記載の圧力センサ。(4) The pressure sensor according to any one of claims 1 to 3, wherein the pressure transmitting portion is formed using silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26356584A JPS61140182A (en) | 1984-12-12 | 1984-12-12 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26356584A JPS61140182A (en) | 1984-12-12 | 1984-12-12 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61140182A true JPS61140182A (en) | 1986-06-27 |
Family
ID=17391310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26356584A Pending JPS61140182A (en) | 1984-12-12 | 1984-12-12 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61140182A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007530957A (en) * | 2004-04-01 | 2007-11-01 | キモンダ アクチエンゲゼルシャフト | Force sensor including organic field effect transistor, and pressure sensor, position sensor, and fingerprint sensor using the force sensor |
| JP2009031045A (en) * | 2007-07-25 | 2009-02-12 | Seiko Epson Corp | Pressure sensor |
| JP2010266441A (en) * | 2009-05-13 | 2010-11-25 | Lsi Corp | Electronic pressure sensing device |
| JP2013016778A (en) * | 2011-06-30 | 2013-01-24 | Qinghua Univ | Thin-film transistor and pressure sensor using the same |
-
1984
- 1984-12-12 JP JP26356584A patent/JPS61140182A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007530957A (en) * | 2004-04-01 | 2007-11-01 | キモンダ アクチエンゲゼルシャフト | Force sensor including organic field effect transistor, and pressure sensor, position sensor, and fingerprint sensor using the force sensor |
| JP2009031045A (en) * | 2007-07-25 | 2009-02-12 | Seiko Epson Corp | Pressure sensor |
| JP2010266441A (en) * | 2009-05-13 | 2010-11-25 | Lsi Corp | Electronic pressure sensing device |
| JP2013016778A (en) * | 2011-06-30 | 2013-01-24 | Qinghua Univ | Thin-film transistor and pressure sensor using the same |
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