JPH0837317A - Solar battery, detecting method of defect in solar battery, and defect detecting and recovering apparatus - Google Patents

Abstract

PURPOSE:To provide a thin-film solar battery with highly radiative characteristics of infrared ray on the rear electrode side. CONSTITUTION:A transparent conductive film (transparent electrode) 2, a semiconductor conjunctive layer 3, and a rear-face electrode 4 are formed on a transparent insulating substrate 1 in a thin-film solar battery cell. An infrared- ray reflective film with reflectance of 5% or above (preferably, 50% or above) for infrared ray of 1mum to 20mum in wavelength (preferably 3mum to 5mum and 8mum to 13mum) is formed on the rear-face electrode 4 side in a spattering step with a target of SiO2. Then, radiation of infrared ray on the rear electrode side can be improved. When there is a defect of short circuit in the thin-film solar battery, the defect can be detected by thermal-image measurement carried out from the rear electrode side, because the in-plane distribution of temperatures formed when a forward current is applied is enough to detect the defective location. As a result, the defect can be detected easily and accurately.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film solar cell for converting sunlight directly into light, a method for detecting a defect in a thin film solar cell, and a defect detecting and removing apparatus for a thin film solar cell using the method.

[0002]

2. Description of the Related Art For example, in the process of manufacturing a thin film solar cell such as an amorphous silicon solar cell, it is necessary to detect an electrically short-circuited portion or a portion close to the electrically short-circuited portion which remarkably impairs the performance of the solar cell. It is expected that the yield of the manufacturing process will be dramatically improved and the manufacturing cost will be greatly reduced. Therefore, such a defect detection and removal technique is a very important technique.

As the above-mentioned defect detecting and repairing means,
There is a need for a device for detecting defects in thin film solar cells and a device for removing the detected defects. Conventionally, as a defect detection method for a thin film solar cell, a photocurrent generated by scanning a small spot (up to several hundreds of microns) of laser light such as a He-Ne laser on the thin film solar cell in the surface of the thin film solar cell. There is a method to detect the in-plane distribution of
7 gazette). Further, conventionally, in the field of integrated circuits, thermal image processing technology has been used for defect detection.

[0004]

However, the laser scanning method has the following problems. That is, in the conventional laser scanning method,
The size of the submodule is, for example, 30 cm square or even 40
Obviously, it takes a long time to detect a defect in a long solar cell such as cm × 120 cm. That is, for example, if it takes 10 seconds to scan 30 cm with a spot of 100 μm, it takes 10 seconds × 100 = 1000 seconds to detect an in-plane distribution of 10 mm width. Therefore, if the spot diameter is made smaller in order to further improve the detection accuracy, it will take a longer time.

Therefore, if the above-mentioned thermal image measurement is used, at least the problem concerning the detection time is solved. However,
The method using the thermal image measurement has the following problems. That is, the transparent insulating substrate side is often used as the light incident side of the thin film solar cell. On the other hand, the back surface side is usually covered with an electrode of a metal film having low infrared radiation. Therefore, when detecting the defect position of the thin-film solar cell by the thermal image measurement used in integrated circuit technology, if the detection is performed from the transparent insulating substrate side, the in-plane temperature distribution in the thermal image measurement becomes large (invention According to a person's measurement, a high temperature part having a diameter of ~ 300 microns was detected (see Fig. 6).
The detection position accuracy deteriorates. On the other hand, when it is attempted to detect from the back electrode side, the infrared radiation property is low because it is covered with the metal film, and it cannot be detected. In order to identify the defect position with high accuracy by measuring the thermal image from the back electrode side, the infrared emissivity on the back electrode side is set to a wavelength of 1 μm to
20 μm (preferably 3 μm to 5 μm wavelength band and 8 μm
The emissivity (that is, absorptance) of light in the wavelength band of up to 13 μm must be 5% or more (desirably 50% or more).

Therefore, an object of the present invention is to provide a thin film solar cell having high infrared radiation on the back electrode side, a method for detecting and removing defects in a thin film solar cell capable of accurately detecting an electrical short circuit defect by thermal image measurement, and a method therefor. An object of the present invention is to provide a defect detection and removal device for a thin film solar cell used.

[0007]

In order to achieve the above object, the invention according to claim 1 is a thin film solar cell comprising a transparent insulating substrate, a transparent conductive film, a semiconductor bonding layer, and a back electrode which are sequentially laminated. In the above, a thin film having an infrared emissivity higher than a predetermined value is formed on the back electrode.

The invention according to claim 2 is characterized in that, in the thin film solar cell of the invention according to claim 1, the thin film having an infrared emissivity higher than a predetermined value is a SiO ₂ thin film.

The invention according to claim 3 detects an electrical short-circuit defect in the thin film solar cell by applying a current in the forward direction to the thin film solar cell and measuring the in-plane temperature distribution of the thin film solar cell. A thin film solar cell defect detection method, wherein the thin film solar cell is the thin film solar cell according to claim 1 or claim 2, or a thin film solar cell in which a back electrode is coated with a substance having an infrared emissivity higher than a predetermined value. The in-plane temperature distribution of the thin film solar cell is measured from the back electrode side.

The invention according to claim 4 is the method for detecting a defect of a thin film solar cell according to the invention according to claim 3, wherein the back electrode is coated with a substance having an infrared emissivity higher than a predetermined value. The thin-film solar cell is characterized in that a film of a substance having an infrared emissivity higher than a predetermined value is attached on the back electrode of the thin-film solar cell.

According to a fifth aspect of the present invention, in the defect detecting method for a thin film solar cell according to the third aspect of the invention, the thin film solar cell in which the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value is The thin film solar cell is characterized by being coated with a fluid substance having an infrared emissivity higher than a predetermined value on the back electrode of the thin film solar cell.

The invention according to claim 6 is the thin film solar cell according to claim 1 or 2, or the thin film solar cell in which the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value. An XY stage that is placed to move the placed thin film solar cell in the X-axis or Y-axis direction, and a current supply unit that causes a current to flow forward in the thin film solar cell placed on the XY stage, Temperature measuring means for measuring the in-plane temperature distribution of the thin film solar cell mounted on the XY stage from the back electrode side, and electrical short circuit defects in the thin film solar cell from the in-plane temperature distribution measured by the temperature measuring means. Defect coordinate calculation means for calculating position coordinates, defect removal means for removing electrical short-circuit defects in the thin film solar cell mounted on the XY stage, XY stage, current supply means, temperature The measuring means and the defect coordinate calculating means are controlled to obtain the coordinates of the position of the electrical short-circuit defect of the thin-film solar cell, and the XY stage and the defect removing means are controlled based on this coordinate to control the electrical short-circuit defect of the thin-film solar cell. It is characterized in that a control means for removing is provided.

[0013]

In the invention according to claim 1 and claim 2, infrared radiation is radiated onto the back electrode of the thin film solar cell in which a transparent conductive film, a semiconductor bonding layer and a back electrode are sequentially laminated on a transparent insulating substrate. A thin film having a rate higher than a predetermined value is formed. Therefore, the in-plane temperature distribution of the thin-film solar cell can be measured from the back electrode side, and the position of the electrical short-circuit defect of the thin-film solar cell can be accurately specified based on the in-plane temperature distribution.

In the invention according to claim 3, claim 1
Alternatively, an in-plane temperature distribution of the thin film solar cell according to claim 2 is applied to the thin film solar cell in which the infrared ray emissivity is higher than a predetermined value to coat a thin film solar cell on the back electrode with a material in the forward direction. It is measured from the back electrode side. In this way, the center position of heat generation when current is applied to the thin-film solar cell is accurately detected and specified, and the electrical short-circuit defect position is accurately detected.

In the invention according to claim 4, the thin-film solar cell in which the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value has the infrared emissivity above the predetermined value on the back surface electrode of the thin-film solar cell. It is easily obtained by sticking a film of high material. In this way, the detection of the electrical short circuit defect position of the thin-film solar cell is more easily performed.

In the invention according to claim 5, the thin-film solar cell in which the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value has the infrared emissivity above the predetermined value on the back surface electrode of the thin-film solar cell. It is easily obtained by applying a high fluid substance. In this way, the detection of the electrical short circuit defect position of the thin-film solar cell is more easily performed.

Further, in the invention according to claim 6, the control means controls the XY stage, the current supply means, the temperature measuring means and the defect coordinate calculating means, and
The coordinates of the electrical short-circuit defect position in the thin film solar cell according to claim 1 or the thin film solar cell in which the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value are obtained. That is, a current is supplied in the forward direction to the thin film solar cell mounted on the XY stage by the current supply means, the XY stage is moved, and the in-plane temperature distribution of the thin film solar cell is measured by the temperature measuring means on the back electrode side. Measured from. Then, the coordinate of the electrical short circuit defect position in the thin film solar cell is calculated by the defect coordinate calculating means from the in-plane temperature distribution of the thin film solar cell. After that, by the control means, based on the calculated coordinates,
The XY stage and the defect removing means are controlled to remove the electrical short circuit defect in the thin film solar cell.
In this way, detection of an electrical short circuit defect and removal of the detected defect are performed on the thin film solar cell.

[0018]

The present invention will be described in detail below with reference to the embodiments shown in the drawings. <First Example> This example relates to a thin film solar cell having a high infrared emissivity on the back electrode side. FIG. 1 is a cross-sectional view of a thin film solar cell obtained in this example, and FIG. 2 shows a cell structure of the thin film solar cell used at that time. In this thin film solar cell, a transparent conductive film 2 as a transparent electrode is laminated on a transparent insulating substrate 1 such as glass, and a PIN junction parallel to the surface of the transparent conductive film 2 or A multi-junction semiconductor junction layer 3 having the tandem structure or the like is formed, and a back electrode (for example, Au,
(Ag, Al, Ti, etc.) 4 are laminated.

In this embodiment, the infrared emissivity on the back electrode 4 side is used in the wavelength range of 1 μm to 20 μm (desirably in the wavelength band of 3 μm to 5 μm) by using the thin film solar cell having the above-mentioned structure as follows. And the emissivity is 5% or more (desirably 5) for light in the wavelength band of 8 μm to 13 μm).
A thin film solar cell exhibiting 0% or more) is obtained. That is, the thin-film solar battery cell is installed in a sputtering apparatus, exhausted to 2 × 10 ⁻⁶ Torr by a vacuum pump, and then the substrate temperature is raised to 200 ° C. After that, 6 Ar gas
It is introduced into the chamber at 0 sccm and the pressure is 5 × 10 ^-6 Tor.
Adjust to r. Next, apply high frequency power of 1 kW to Si
An O ₂ target is sputtered for 14 minutes to form a SiO ₂ film 5 having a film thickness of 100 nm. Thus, a thin film solar cell having a structure as shown in FIG. 1 is obtained. However, the above Si
Since the O ₂ film 5 is an insulator, it is necessary to draw the terminal from the back surface electrode 4 in advance when forming the SiO ₂ film 5.

As described above, the thin-film solar cell in this embodiment has an infrared emissivity of 9 μm at the wavelength of 9 μm on the back electrode 4.
80% or more of the infrared light of the SiO ₂ film 5 is formed. Therefore, when this thin-film solar cell has an electrical short-circuit defect, when an electric current is passed through the thin-film solar cell in the forward direction and thermal image measurement is performed from the back electrode 4 side, the position of the electrical short-circuit defect is determined. It is possible to obtain an in-plane temperature distribution of a size that can be accurately specified, and it is possible to easily and accurately detect defects. Therefore, according to this embodiment, the yield of the thin film solar cell can be dramatically improved.

The electric short circuit defect portion detected as described above can be easily removed by laser evaporation. However, at that time, too much Si
If the O ₂ film 5 is too thin, the defective portion cannot be removed. Therefore, the optimum thickness of the SiO ₂ film 5 should be 1 micron or less, preferably 200 nm or less. Further, in this embodiment, the SiO ₂ film 5 is used as the film having a high infrared radiation property, but the same effect can be obtained by using the SiN film.

<Second Embodiment> This embodiment relates to a defect detecting and removing method for a thin film solar cell capable of accurately detecting an electrical short circuit defect by measuring a thermal image. In the first embodiment, a SiO ₂ film 5 having an infrared emissivity of 80% or more for infrared light having a wavelength of 9 μm is formed on the back electrode 4 of a conventional thin film solar cell such as an amorphous silicon thin film solar cell.
To obtain infrared thin film solar cells that enhance infrared radiation on the back electrode 4 side and enable detection of electrical short-circuit defects by thermal image measurement from the back electrode 4 side. This means that by coating the back electrode of a conventional amorphous silicon thin-film solar cell or the like with a substance having a high infrared emissivity, the infrared emissivity on the back electrode side is wavelength 1 μm to 20 μm (desirably 3 μm to 5 μm). The infrared detection device should be able to detect electrical short-circuit defects by setting its emissivity to 5% or more (desirably 50% or more) for light in the wavelength band of 8 μm to 8 μm to 13 μm). Suggest.

Therefore, in the present embodiment, as shown in FIG. 2, an electrical short circuit of a thin film solar cell in which a transparent insulating substrate 1, a transparent conductive film 2, a semiconductor bonding layer 3 and a back electrode 4 are laminated. When detecting defects with an infrared detector,
A film such as Kapton (polyimide) or Teflon having an infrared emissivity of 80% or more for infrared light having a wavelength of 4 μm is attached to the back electrode 4, or the infrared emissivity has a wavelength of 4
80% or more of a substance (for example, silicone resin, acrylic resin, alkyd resin) is applied to the infrared light of μm.

As described above, it is necessary to remove the film having a high infrared emission property and the substance having a high infrared emission property applied on the back electrode 4 when removing defects. Therefore, it is considered that the number of man-hours is increased, but there is no big problem because it may be performed only for the thin-film solar cell determined to have the electrical short circuit defect by the detection by the infrared detection device.

The actual detection of the electrical short circuit defect is performed as follows. As described above, a normal thin film solar cell in which a high-infrared radiation film is attached to the back electrode 4 or a high-infrared radiation substance is applied to the back electrode 4 is about 100 m in the forward direction.
At the same time when the current A is instantaneously applied, the in-plane temperature distribution of the thin film solar cell is measured from the back electrode 4 side using a thermal image measuring device. Then, a large amount of current flows in the electrically short-circuited portion, so heat is generated in the short-circuited portion, and an in-plane temperature distribution is generated around that portion. Fig. 3 shows an example of the measurement results of the in-plane temperature distribution obtained in this way. The circular temperature distribution (a)
There is an electrical short-circuit defect at the center of.

At that time, the diameter is smaller than the in-plane temperature distribution (see FIG. 6) obtained by the thermal image measurement from the light incident side having the transparent insulating substrate 1, and the position of the electrical short circuit defect is accurately determined. An in-plane temperature distribution of a size that can be well specified can be obtained. Therefore, the electrical short-circuit defect of the thin-film solar battery cell can be detected with high accuracy and easily.

In this embodiment, the back surface electrode 4 is used.
Describes a method for detecting electrical short-circuit defects in a thin film solar cell in which a film having high infrared radiation is attached or a substance having high infrared radiation is applied. However, this embodiment is also applicable to the thin film solar cell formed according to the first embodiment.

<Third Embodiment> This embodiment relates to a defect detecting and removing apparatus for a thin film solar cell capable of accurately detecting and removing an electrical short-circuit defect based on a thermal image measurement result. As a thin film solar cell to which this embodiment is applied, a thin film solar battery cell in which a film having an infrared emissivity higher than 80% for infrared light having a wavelength of 9 μm is formed on the back electrode formed according to the first embodiment. Alternatively, a film having an infrared emissivity of 80% or more with respect to infrared light having a wavelength of 4 μm or more is attached to the back electrode of the ordinary thin-film solar cell in the second embodiment, or the infrared light having a wavelength of 4 μm or more is applied. On the other hand, a material coated with a substance exhibiting an infrared emissivity of 80% or more is used.

FIG. 4 is a perspective view of a defect detecting and removing apparatus for a thin film solar cell according to this embodiment. This thin film solar cell defect detection / removal device includes an XY stage 11 on which a thin film solar cell 12 that is a target of defect detection is mounted, a thermal image measurement unit 13 that detects infrared rays from the energized thin film solar cell 12, and detection. A pulse laser 14 for removing the generated electrical short circuit defect, and a control unit 15 having a power supply, a storage unit, a defect coordinate calculation unit, a control unit and the like to control the operation of each unit are roughly configured.

The thin-film solar cell defect detection and removal device configured as described above detects and removes electrical short-circuit defects in the following manner. That is, as described above, the thin film solar cell 12 whose back electrode side is covered with the substance emitting high infrared radiation is placed on the XY stage 11 with the substance side emitting high infrared radiation facing down.
Then, the XY stage 11 is driven to move the thin film solar cell 12 to a position where the outermost end of the thin film solar cell falls within the detection range of the thermal image measuring unit 13, and under the control of the control means of the control unit 15. Start defect detection. Then, a current from the power supply of the control unit 15 is supplied to the transparent conductive film and the back surface electrode of the thin film solar cell 12. In this case, the power supply may be a DC power supply, and may have a capacity such that a current of about 100 mA can be instantaneously passed.

As described above, a current of up to 100 mA is momentarily applied to the transparent conductive film and the back electrode of the thin film solar cell 12 in the forward direction, and at the same time, the thermal image measurement unit 13 causes the in-plane surface of the thin film solar cell 12 to move. Measure the temperature distribution. At that time, since the thermal image measuring unit 13 measures the in-plane temperature distribution of the thin film solar cell 12 from the back electrode side, the electrical short circuit defect of the thin film solar cell 12 is detected with high accuracy as described in the second embodiment. You can do it. Here, when the thin film solar cell is a long product of 30 cm square or more, the thermal image measuring unit 1
Optical lens systems having different viewing angles are used as the third optical lens system. Then, a thermal image of the entire thin-film solar cell is measured with a lens having a wide viewing angle, and an electrical short-circuit defect is detected with rough positional accuracy. In the following, the viewing angle can be narrowed sequentially and finally can be detected with an accuracy of 100 microns or less (tens of mm to several hundred m
Measure the thermal image with the m-square lens system and identify the electrical short circuit defect location with sufficient positional accuracy.

For example, in the case of a thin film solar cell of about 30 cm square, the above-mentioned step of changing the viewing angle is appropriate to be performed in three steps, and it takes several seconds to measure the thermal image at each step. It is possible to improve the detection speed by an order of magnitude as compared with. However, in order to measure the thermal image of the whole thin film solar cell with the lens of the first stage viewing angle, it is necessary to set a large distance between the thin film solar cell 12 and the thermal image measurement unit 13. Therefore, the viewing angle of the first step is 10 cm ~
The XY stage 11 may be moved by narrowing it to about 15 cm square. The coordinates of the electrical short circuit defect position detected by the thermal image measurement unit 13 are calculated by the defect coordinate calculation means in the control unit 15, and the calculation result is stored in the storage unit. The defect coordinate calculation means and the control means are constituted by a computer.

Thus, when all the electrical short-circuit defect coordinates in the thin film solar cell are obtained, the defect removal by laser light is performed. Here, the pulse laser 1
Laser light emitted horizontally from the reflection means 4 is reflected by the reflection means 16
The light is reflected by the lens 17 and directed vertically downward, and is condensed on the thin film solar cell 12 by the lens 17. First, by the control means of the control unit 15, X based on the coordinates of the electrical short circuit defect stored in the storage means.
The Y stage 11 is driven to move the location of the electrical short circuit defect in the thin-film solar cell 12 to the laser beam focusing position. Then, the pulse laser 14 is driven by the control means to emit a laser beam, and the electrical short circuit defect of the thin film solar cell 12 is removed.

At this time, the removal of the electrical short circuit defect is
At least the back surface electrode 4 in the thin film solar cell is removed by laser light. In this embodiment, a trimming laser is used as the pulse laser 14. By doing so, at least one of the electrodes can be removed with a laser beam, so that whatever the cause of the electrical short circuit defect can be reliably removed. In particular, when the laser irradiation is performed for each beam, the pulse width can be shortened to several nanoseconds, and thus the peak power of the generated laser is higher than that of the YAG laser using the normal Q frequency oscillation. Therefore, there is an advantage that damage to the periphery of the portion where the defect is removed is small and the spot for each shot can be controlled with sufficient accuracy to about 10 microns. The spot beam diameter of the laser light is preferably about several microns. FIG. 5 shows current / voltage characteristics of the thin film solar cell before and after defect removal by the defect detection and removal apparatus for a thin film solar cell in this example.

As described above, according to the defect detecting and removing apparatus for a thin film solar cell in this embodiment, the location of an electrical short circuit defect in the thin film solar cell can be detected and immediately removed. In addition, the in-plane temperature distribution obtained by the thermal image measuring unit 13 at that time is not blurred, and the positional accuracy of the electrical short circuit defect is extremely high, and it can be detected as a high temperature portion having a diameter of several tens of microns. Therefore, it is possible to instantly confirm whether or not the defect removal by the laser light is surely performed. In addition, since defect detection is performed from the back surface side of the thin film solar cell 12 by thermal image measurement and defect removal is performed from the front surface side with laser light, defect removal and repair can be efficiently performed.

In the above embodiments, the case where laser light is used as the defect removing means has been described as an example. However, the present invention is not limited to this. For example, the location of the electrical short-circuit defect is marked based on the electrical short-circuit defect coordinates stored in the storage means, and the back surface electrode 4 of the defective portion is etched. You may use the method of removing etc.

The infrared emissivity values disclosed in the above embodiments are not limited to these. In short,
The infrared emissivity on the back electrode side of the thin-film solar cell is 5% of the emissivity (that is, absorptivity) for light with a wavelength of 1 μm to 20 μm (desirably a wavelength band of 3 μm to 5 μm and a wavelength band of 8 μm to 13 μm). Any value may be set to the above value (preferably 50% or more).

[0038]

As is apparent from the above, the thin film solar cell of the invention according to claim 1 is a thin film solar cell in which a transparent conductive film, a semiconductor bonding layer and a back electrode are sequentially laminated on a transparent insulating substrate. Since a thin film having an infrared emissivity higher than a predetermined value is formed on the back electrode in, the thin film solar cell having high infrared emissivity on the back electrode side can be obtained. Therefore, when there is an electrical short-circuit defect in this thin-film solar cell, by applying a current in the forward direction to the thin-film solar cell and performing a thermal image measurement from the back electrode side,
It is possible to obtain an in-plane temperature distribution having a size capable of accurately specifying the position of the electrical short circuit defect. That is, according to the present invention, it is possible to provide a thin-film solar cell capable of easily and accurately detecting defects.

In the thin-film solar cell of the invention according to claim 2, since the thin film having the infrared emissivity higher than a predetermined value is formed of SiO ₂ , a thin film having an infrared emissivity higher than the predetermined value is formed on the back electrode. The formed thin film solar cell can be easily provided.

In the thin film solar cell defect detecting method of the present invention according to claim 3, the thin film solar cell is supplied with an electric current in a forward direction to measure an in-plane temperature distribution of the thin film solar cell, and the thin film solar cell is measured. The thin film solar cell according to claim 1 or 2, which is used as the thin film solar cell for detecting the electrical short-circuit defect in, is a thin film solar cell in which an infrared emissivity is higher than a predetermined value. Since the in-plane temperature distribution of the thin-film solar cell is measured from the back electrode side, a temperature distribution of a size that can accurately identify an electrical short circuit defect location can be obtained. Therefore, according to the present invention, the electrical short-circuit defect of the thin-film solar battery cell can be detected with high accuracy and easily.

According to a fourth aspect of the present invention, there is provided a thin film solar cell defect detection method, wherein the back electrode is coated with a substance having an infrared emissivity higher than a predetermined value. Since a film made of a material having an infrared emissivity higher than a predetermined value is attached, the defect detection method for a thin film solar cell capable of detecting an electrical short circuit defect with high accuracy can be more easily carried out.

According to a fifth aspect of the present invention, there is provided a thin film solar cell defect detecting method, wherein a thin film solar cell in which the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value is provided on the back surface electrode of the thin film solar cell. Since it is obtained by applying a fluid substance having an infrared emissivity higher than a predetermined value, it is possible to more easily implement the defect detection method for a thin film solar cell capable of detecting an electrical short circuit defect with high accuracy.

A thin film solar cell defect detecting and removing apparatus according to a sixth aspect of the present invention comprises an XY stage, a current supplying means, a temperature measuring means, a defect coordinate calculating means, a defect removing means and a control means. By the control means, the XY stage,
The thin film solar cell according to claim 1 or 2, wherein the current supplying means, the temperature measuring means, and the defect coordinate calculating means are controlled to coat the back electrode with a substance having an infrared emissivity higher than a predetermined value. A current in the forward direction to measure the in-plane temperature distribution from the back electrode side to obtain the coordinates of the position of the electrical short circuit defect of the thin film solar cell, and further, based on these coordinates, the XY stage by the control means. And, by controlling the defect removing means to remove the electrical short-circuit defect of the thin-film solar cell, the electrical short-circuit defect of the thin-film solar cell is accurately detected from the back electrode side, and the detected defect is automatically detected. Can be removed. Therefore, according to the present invention, it is possible to detect and remove electrical short-circuit defects efficiently and accurately with one device.

[Brief description of drawings]

FIG. 1 is a sectional view of a thin film solar cell according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of a thin-film solar battery cell used to obtain the thin-film solar battery of FIG.

FIG. 3 is a diagram showing an example of in-plane temperature distribution measured by a thermal image measuring device from the back electrode side in the defect detection method for a thin film solar cell in the second embodiment.

FIG. 4 is a perspective view of a defect detection / removal device for a thin-film solar cell according to a third embodiment.

5 is a current / current characteristic diagram of the thin film solar cell before and after defect removal by the defect detecting and removing apparatus for a thin film solar cell of FIG.

FIG. 6 is a diagram showing an example of in-plane temperature distribution measured by a thermal image measuring device from the transparent insulating substrate side of a thin film solar cell.

[Explanation of symbols]

1 ... transparent insulating substrate, 2 ... transparent conductive film, 3 ... semiconductor junction layer, 4 ... back electrode, 5 ... SiO ₂ film, 11 ... XY stage, 12 ... thin film solar cell, 13 ...
Thermal image measurement unit, 14 ... Pulse laser,
15 ... Control unit.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hitoshi Sannomiya 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka

Claims (6)

[Claims] 1. A thin-film solar cell comprising a transparent insulating substrate, a transparent conductive film, a semiconductor bonding layer, and a back electrode, which are sequentially laminated on the back electrode, and a thin film having an infrared emissivity higher than a predetermined value. A thin film solar cell characterized by being formed. 2. The thin film solar cell according to claim 1, wherein the thin film having the infrared emissivity higher than a predetermined value is a SiO ₂ thin film. 3. A defect detecting method for a thin film solar cell, comprising detecting an electrical short circuit defect in the thin film solar cell by applying an electric current in a forward direction to the thin film solar cell and measuring an in-plane temperature distribution of the thin film solar cell. As the thin film solar cell, the thin film solar cell according to claim 1 or 2, or a thin film solar cell in which a back electrode is coated with a substance having an infrared emissivity higher than a predetermined value is used. The in-plane temperature distribution is measured from the back electrode side, which is a defect detection method for a thin film solar cell. 4. The thin film solar cell defect detection method according to claim 3, wherein the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value. A method for detecting defects in a thin-film solar cell, which is a thin-film solar cell formed by sticking a film of a substance having an infrared emissivity higher than a predetermined value. 5. The thin film solar cell defect detection method according to claim 3, wherein the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value. A method for detecting defects in a thin film solar cell, which is a thin film solar cell formed by applying a fluid substance having an infrared emissivity higher than a predetermined value. 6. The thin-film solar cell according to claim 1 or 2, or the thin-film solar cell in which the back surface electrode is coated with a substance having an infrared emissivity higher than a predetermined value is mounted and mounted. And an XY stage for moving the thin-film solar cell in the X-axis or Y-axis direction, a current supply means for supplying a current in the forward direction to the thin-film solar cell mounted on the XY stage, and the XY stage mounted on the XY stage. Temperature measuring means for measuring the in-plane temperature distribution of the thin film solar cell from the back electrode side, and a defect for calculating the coordinates of the electrical short circuit defect position in the thin film solar cell from the in-plane temperature distribution measured by the temperature measuring means. Coordinate calculating means, defect removing means for removing electrical short-circuit defects in the thin film solar cell mounted on the XY stage, the XY stage, current supplying means, temperature measuring means and defects Control for calculating the electrical short-circuit defect position of the thin-film solar cell by controlling the mark calculating means, and controlling the XY stage and the defect removing means based on this coordinate to remove the electrical short-circuit defect of the thin-film solar cell. A device for detecting and removing defects in a thin-film solar cell, comprising: