JP7331497B2

JP7331497B2 - power converter

Info

Publication number: JP7331497B2
Application number: JP2019120146A
Authority: JP
Inventors: 道雄玉手; 佑平鈴木; 航太朗山澤
Original assignee: Fuji Electric Co Ltd
Current assignee: Fuji Electric Co Ltd
Priority date: 2019-06-27
Filing date: 2019-06-27
Publication date: 2023-08-23
Anticipated expiration: 2039-06-27
Also published as: JP2021005983A

Description

本発明は、電力変換装置に関し、特に、電解コンデンサを備えた電力変換装置に適用して有効な技術に関するものである。 TECHNICAL FIELD The present invention relates to a power converter, and more particularly to a technique effectively applied to a power converter having electrolytic capacitors.

ＳｉＣ，ＧａＮと言った次世代パワー半導体（ワイドバンドギャップ半導体）の量産化のみならず、Ｓｉパワー半導体の性能向上によって、ターンオン・ターンオフにおけるスイッチング特性は高速化、低損失化し、電力変換装置やインバータ装置においては著しく小型化されている。
また、自動車の電化など、これまでインバータ装置が適用されていなかった産業にも適用されることが増えてきており、インバータ装置は優れた耐環境性能（防塵，防水）が求められるようになってきた。例えば、従来から防水仕様のインバータ装置は発売されていたが、より過酷な環境に設置されるために、密閉構造を採用する製品も増えてきている。このような密閉構造のインバータ装置の場合、筐体内に構成部品をコンパクトに収納することや、様々な部品損失に起因する発熱を装置内で如何にして冷却すること、が重要な課題となっている。 In addition to the mass production of next-generation power semiconductors (wide bandgap semiconductors) such as SiC and GaN, improvements in the performance of Si power semiconductors have resulted in faster turn-on/turn-off switching characteristics and lower loss, which has led to power converters and inverters. The device is significantly miniaturized.
In addition, the use of inverters in industries where inverters have not been applied is increasing, such as the electrification of automobiles, and inverters are now required to have excellent environmental resistance (dust and water resistance). Ta. For example, waterproof inverter devices have been on the market for some time, but the number of products adopting a sealed structure is increasing because they are installed in harsher environments. In the case of such a closed-structure inverter device, the important issues are how to compactly store the components in the housing and how to cool the heat generated by the loss of various parts inside the device. there is

特許文献１には、小さな密閉構造のユニット内に構成部品を収納するために、並列接続したコンデンサを横置きに配置することで、薄いユニット構造を実現している。そして、密閉構造のユニット内に収納することでコンデンサの冷却も必要となるため、コンデンサを冷却器に接触させることで冷やすことも提案されている。
一方、コンデンサを横置きにすると、パワー半導体までの距離が長くなること、ラミネート構造を実現し難いことから、配線インダクタンスが増加してしまう課題もある。この課題に対しては、複数のコンデンサを直列接続したコンデンサ部をラミネート構造化することで低インダクタンス化を実現する方法が特許文献２に提案されている。
そこで、本発明者らは、簡単な構成で、低インダクタンス化を実現する方法について検討し、本発明をなした。 In Patent Document 1, a thin unit structure is realized by horizontally arranging parallel-connected capacitors in order to house components in a unit with a small sealed structure. Since it is necessary to cool the condenser by housing it in a unit with a closed structure, it has been proposed to cool the condenser by bringing it into contact with a cooler.
On the other hand, placing the capacitor horizontally increases the distance to the power semiconductor and makes it difficult to realize a laminate structure, which increases the wiring inductance. To solve this problem, Patent Document 2 proposes a method of realizing low inductance by laminating a capacitor section in which a plurality of capacitors are connected in series.
Accordingly, the present inventors have studied a method for achieving low inductance with a simple configuration, and have completed the present invention.

特開２０１４－５７４００号公報Japanese Patent Application Laid-Open No. 2014-57400 特開平７－３１１６５号公報JP-A-7-31165

本発明の目的は、電力変換装置の薄型化を図りつつ、簡単な構成で、低インダクタンス化を図ることが可能な技術を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a technology capable of achieving low inductance with a simple configuration while achieving a reduction in the thickness of a power conversion device.

本発明の一態様に係る電力変換装置は、制御外部端子、正極外部端子及び負極外部端子を有し、かつ制御外部端子に入力される制御信号により正極外部端子及び負極外部端子間の電気的接続をオン・オフするスイッチング素子を有する半導体装置と、各々の長手方向を第１方向に揃えた状態で第１方向と直交する第２方向に沿って配列され、かつ中間導電部材で直列接続された複数のコンデンサを有するコンデンサユニットと、半導体装置の正極外部端子及びコンデンサユニットの一方の端子と電気的に接続された正極導電部材と、半導体装置の負極外部端子及びコンデンサユニットの他方の端子と電気的に接続された負極導電部材と、を備えている。
そして、半導体装置、正極導電部材及び負極導電部材は、第２方向において、コンデンサユニットの中間導電部材側に配置され、中間導電部材、正極導電部材及び負極導電部材は、第１方向及び第２方向と直交する第３方向において、電気的に分離された状態で積層されている。 A power converter according to an aspect of the present invention has a control external terminal, a positive electrode external terminal, and a negative electrode external terminal, and an electrical connection between the positive electrode external terminal and the negative electrode external terminal is established by a control signal input to the control external terminal. a semiconductor device having a switching element for turning on and off; and a semiconductor device arranged along a second direction orthogonal to the first direction with the longitudinal direction aligned with the first direction, and connected in series with an intermediate conductive member a capacitor unit having a plurality of capacitors; a positive conductive member electrically connected to the positive external terminal of the semiconductor device and one terminal of the capacitor unit; and electrically connected to the negative external terminal of the semiconductor device and the other terminal of the capacitor unit. and a negative electrode conductive member connected to.
The semiconductor device, the positive conductive member, and the negative conductive member are arranged on the intermediate conductive member side of the capacitor unit in the second direction, and the intermediate conductive member, the positive conductive member, and the negative conductive member are arranged in the first direction and the second direction. are laminated in an electrically isolated state in a third direction perpendicular to the .

本発明によれば、電力変換装置の薄型化を図りつつ、簡単な構成で、低インダクタンス化を図ることが可能となる。 According to the present invention, it is possible to reduce the inductance with a simple configuration while reducing the thickness of the power converter.

本発明の第１実施形態に係る電力変換装置の一例を示す等価回路図である。1 is an equivalent circuit diagram showing an example of a power conversion device according to a first embodiment of the present invention; FIG. 本発明の第１実施形態に係る電力変換装置の一例を示す斜視図である。BRIEF DESCRIPTION OF THE DRAWINGS It is a perspective view which shows an example of the power converter device which concerns on 1st Embodiment of this invention. 図２のII－II切断線の位置で切った断面構造を示す概略断面図である。FIG. 3 is a schematic cross-sectional view showing a cross-sectional structure taken along the line II-II in FIG. 2; 図２において、負極導電部材及び絶縁体を除去した状態を示す斜視図である。FIG. 3 is a perspective view showing a state in which a negative electrode conductive member and an insulator are removed in FIG. 2; 図２において、負極導電部材、絶縁体、正極導電部材及び絶縁体を除去した状態を示す斜視図である。3 is a perspective view showing a state in which the negative electrode conductive member, the insulator, the positive electrode conductive member, and the insulator are removed in FIG. 2; FIG. 本発明の第１実施形態に係る電力変換装置において、負極導電部材を流れる主回路電流の方向と中間導電部材を放電電流が流れる方向を示す平面図である。FIG. 4 is a plan view showing the direction of the main circuit current flowing through the negative conductive member and the direction of the discharge current flowing through the intermediate conductive member in the power converter according to the first embodiment of the present invention; 本発明の第１実施形態に係る電力変換装置において、正極導電部材を流れる主回路電流の方向と中間導電部材を放電電流が流れる方向を示す平面図である。FIG. 2 is a plan view showing the direction of a main circuit current flowing through a positive conductive member and the direction of a discharge current flowing through an intermediate conductive member in the power converter according to the first embodiment of the present invention; 本発明の第２実施形態に係る電力変換装置の一例を示す斜視図である。It is a perspective view which shows an example of the power converter device which concerns on 2nd Embodiment of this invention.

以下、図面を参照して本発明の一実施形態を詳細に説明する。図面の記載において、同一又は類似の部分には同一又は類似の符号を付し、重複する説明を省略する。但し、図面は模式的なものであり、厚みと平面寸法との関係、各層の厚みの比率等は実際のものとは異なる場合がある。また、図面相互間においても寸法の関係や比率が異なる部分が含まれ得る。また、以下に示す実施形態は、本発明の技術的思想を具体化するための装置や方法を例示するものであって、本発明の技術的思想は、構成部品の材質、形状、構造、配置等を下記のものに特定するものでない。
また、以下の実施形態では、空間内で互に直交する三方向において、同一平面内で互に直交する第１方向及び第２方向をそれぞれＸ方向、Ｙ方向とし、第１方向及び第２方向のそれぞれと直交する第３方向をＺ方向とする。 An embodiment of the present invention will be described in detail below with reference to the drawings. In the description of the drawings, the same or similar parts are denoted by the same or similar reference numerals, and overlapping descriptions are omitted. However, the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like may differ from the actual ones. In addition, portions having different dimensional relationships and ratios may also be included between drawings. Further, the embodiments shown below are examples of devices and methods for embodying the technical idea of the present invention. etc. are not specified below.
Further, in the following embodiments, in the three directions that are orthogonal to each other in space, the first direction and the second direction that are orthogonal to each other in the same plane are defined as the X direction and the Y direction, respectively. A third direction orthogonal to each of is defined as the Z direction.

また、本明細書において、「主電極」とは、ＩＧＢＴ（Ｉnsulated Ｇate Ｂipolar Ｔransistor）においてエミッタ電極又はコレクタ電極の何れか一方となる電極を意味する。電界効果トランジスタ（ＦＥＴ）や静電誘導トランジスタ（ＳＩＴ）においてはソース電極又はドレイン電極の何れか一方となる電極を意味する。より具体的には、上記の「一方となる電極」を「第１主電極」として定義すれば、「他方の電極」は「第２主電極」となる。即ち、「第２主電極」とは、ＩＧＢＴにおいては第１主電極とはならないエミッタ電極又はコレクタ電極の何れか一方となる電極、ＦＥＴ，ＳＩＴにおいては上記第１主電極とはならないソース電極又はドレイン電極の何れか一方となる電極を意味する。以下の実施形態では、スイッチング素子としてのＩＧＢＴに着目して説明するので、エミッタ電極を「第１主電極」、コレクタ電極を「第２主電極」と呼ぶ。 Further, in this specification, the term "main electrode" means an electrode that serves as either an emitter electrode or a collector electrode in an IGBT (Insulated Gate Bipolar Transistor). In a field effect transistor (FET) or a static induction transistor (SIT), it means an electrode which is either a source electrode or a drain electrode. More specifically, if the "one electrode" is defined as the "first main electrode", the "other electrode" is the "second main electrode". That is, the "second main electrode" is an electrode that is either an emitter electrode or a collector electrode that is not the first main electrode in an IGBT, and a source electrode that is not the first main electrode or a collector electrode in an FET or SIT. It means an electrode that becomes either one of the drain electrodes. In the following embodiments, since the IGBT as a switching element will be focused on, the emitter electrode will be called the "first main electrode" and the collector electrode will be called the "second main electrode".

（第１実施形態）
＜電力変換装置＞
図１及び図２に示すように、本発明の第１実施形態に係る電力変換装置１は、電力を直流から交流に変換するインバータユニット２と、インバータユニット２に供給される直流電圧を平滑するコンデンサユニット４とを備えている。
＜インバータユニット＞
図１から図４に示すように、インバータユニット２は、３つの半導体装置１０（１０ｕ，１０ｖ，１０ｗ）と、各半導体装置１０とコンデンサユニットとを電気的に接続する正極導電部材２０及び負極導電部材３０とを備えている。正極導電部材２０は図１の正極電源ライン８Ｐに対応し、負極導電部材３０は図１の負極電源ライン８Ｎに対応する。 (First embodiment)
<Power converter>
As shown in FIGS. 1 and 2, the power converter 1 according to the first embodiment of the present invention includes an inverter unit 2 that converts power from DC to AC, and smoothes the DC voltage supplied to the inverter unit 2. and a capacitor unit 4 .
<Inverter unit>
As shown in FIGS. 1 to 4, the inverter unit 2 includes three semiconductor devices 10 (10u, 10v, 10w), a positive conductive member 20 and a negative conductive member 20 that electrically connect each semiconductor device 10 and the capacitor unit. A member 30 is provided. The positive conductive member 20 corresponds to the positive power supply line 8P in FIG. 1, and the negative conductive member 30 corresponds to the negative power supply line 8N in FIG.

３つの半導体装置１０は、例えば三相誘導電動機９のＵ相，Ｖ相，Ｗ相に対応して設けられている。そして、３つの半導体装置１０は、図１に示すように、上アーム１１ａとしてのスイッチング素子Ｔｒ１と、下アーム１１ｂとしてのスイッチング素子Ｔｒ２とを直列接続した構成になっている。そして、スイッチング素子Ｔｒ１には整流素子Ｄｉ１が並列に逆接続され、スイッチング素子Ｔｒ２には整流素子Ｄｉ２が並列に逆接続されている。すなわち、３つの半導体装置１０の各々は、２つのスイッチング素子Ｔｒ１及びＴｒ２を直列接続した１レグで構成されている。スイッチング素子Ｔｒ１，Ｔｒ２及び整流素子Ｄｉ１，Ｄｉ２は、例えばＳｉＣ、ＧａＮと言ったワイドバンドギャップ半導体からなる基板を主体とする半導体チップで構成されている。 The three semiconductor devices 10 are provided corresponding to, for example, the U-phase, V-phase, and W-phase of the three-phase induction motor 9 . As shown in FIG. 1, the three semiconductor devices 10 have a configuration in which a switching element Tr1 as an upper arm 11a and a switching element Tr2 as a lower arm 11b are connected in series. A rectifying element Di1 is reversely connected in parallel to the switching element Tr1, and a rectifying element Di2 is reversely connected in parallel to the switching element Tr2. That is, each of the three semiconductor devices 10 is composed of one leg in which two switching elements Tr1 and Tr2 are connected in series. The switching elements Tr1, Tr2 and the rectifying elements Di1, Di2 are composed of semiconductor chips mainly composed of substrates made of wide bandgap semiconductors such as SiC and GaN.

スイッチング素子Ｔｒ１は、第２主電極（Ｃ）が正極電源ライン８Ｐと電気的に接続され、第１主電極（Ｅ）がスイッチング素子Ｔｒ２の第２主電極（Ｃ）と電気的に接続されている。スイッチング素子Ｔｒ２の第１主電極（Ｅ）は、負極電源ライン８Ｎと電気的に接続されている。整流素子Ｄｉ１は、アノード電極（Ａ）がスイッチング素子Ｔｒ１の第１主電極（Ｅ）と電気的に接続され、カソード電極（Ｋ）がスイッチング素子Ｔｒ１の第２主電極（Ｃ）と電気的に接続されている。整流素子Ｄｉ２は、アノード電極（Ａ）がスイッチング素子Ｔｒ２の第１主電極（Ｅ）と電気的に接続され、カソード電極（Ｋ）がスイッチング素子Ｔｒ２の第２主電極（Ｃ）と電気的に接続されている。 The switching element Tr1 has a second main electrode (C) electrically connected to the positive power supply line 8P and a first main electrode (E) electrically connected to the second main electrode (C) of the switching element Tr2. there is A first main electrode (E) of the switching element Tr2 is electrically connected to the negative power supply line 8N. The rectifying element Di1 has an anode electrode (A) electrically connected to the first main electrode (E) of the switching element Tr1, and a cathode electrode (K) electrically connected to the second main electrode (C) of the switching element Tr1. It is connected. The rectifying element Di2 has an anode electrode (A) electrically connected to the first main electrode (E) of the switching element Tr2, and a cathode electrode (K) electrically connected to the second main electrode (C) of the switching element Tr2. It is connected.

３つの半導体装置１０おいて、各々の一方の入力ノード部Ｎｄ１は、正極電源ライン８Ｐと電気的に接続され、各々の他方の入力ノード部Ｎｄ２は、負極電源ライン８Ｎと電気的に接続されている。すなわち、３つの半導体装置１０の各々は、正極電源ライン８Ｐと負極電源ライン８Ｎとの間において並列に接続されている。
インバータユニット２は、３つの半導体装置１０の各々のスイッチング素子Ｔｒ１，Ｔｒ２にゲート駆動回路から出力されるゲート信号（制御信号）が入力されることにより、各半導体装置１０の出力ノード部Ｎｄ３から、Ｕ相のモータ駆動電流、Ｖ相のモータ駆動電流及びＷ相のモータ駆動電流が三相誘導電動機９のモータ巻線に通電される。 In three semiconductor devices 10, one input node portion Nd1 of each is electrically connected to positive power supply line 8P, and the other input node portion Nd2 of each is electrically connected to negative power supply line 8N. there is That is, each of the three semiconductor devices 10 is connected in parallel between the positive power supply line 8P and the negative power supply line 8N.
In the inverter unit 2, a gate signal (control signal) output from a gate drive circuit is input to the switching elements Tr1 and Tr2 of each of the three semiconductor devices 10, and from the output node portion Nd3 of each semiconductor device 10, A U-phase motor drive current, a V-phase motor drive current, and a W-phase motor drive current are applied to the motor windings of the three-phase induction motor 9 .

図２に示すように、３つの半導体装置１０の各々は、２つのスイッチング素子Ｔｒ１，Ｔｒ２及び２つの整流素子Ｄｉ１，Ｄｉ２を１つの封止体１２で封止した２ｉｎ１タイプのパッケージ構造になっている。そして、３つの半導体装置１０の各々は、封止体１２の上面側に、正極外部端子１３、負極外部端子１４、出力外部端子１５及び２つの制御外部端子１６ａ，１６ｂをそれぞれ備えている。２つの制御外部端子１６ａ，１６ｂ、正極外部端子１３、負極外部端子１４及び出力外部端子１５は、この順で封止体１２の長手方向に沿って配列されている。 As shown in FIG. 2, each of the three semiconductor devices 10 has a 2-in-1 type package structure in which two switching elements Tr1 and Tr2 and two rectifying elements Di1 and Di2 are sealed with one sealing body 12. there is Each of the three semiconductor devices 10 has a positive electrode external terminal 13, a negative electrode external terminal 14, an output external terminal 15, and two control external terminals 16a and 16b on the upper surface side of the sealing body 12, respectively. The two control external terminals 16a and 16b, the positive external terminal 13, the negative external terminal 14, and the output external terminal 15 are arranged along the longitudinal direction of the sealing body 12 in this order.

正極外部端子１３は、図１の入力ノード部Ｎｄ１に対応し、スイッチング素子Ｔｒ１の第２主電極（Ｃ）と電気的に接続されている。負極外部端子１４は、図１の出力ノード部Ｎｄ２に対応し、スイッチング素子Ｔｒ２の第１主電極（Ｅ）と電気的に接続されている。出力外部端子１５は、図１の出力ノード部Ｎｄ３に対応し、スイッチング素子Ｔｒ１の第１主電極（Ｅ）及びスイッチング素子Ｔｒ２の第２主電極（Ｃ）と電気的に接続されている。２つの制御外部端子１６ａ及び１６ｂのうち、一方の制御外部端子１６ａは、図１に示すように、上アーム１１ａであるスイッチング素子Ｔｒ１の制御電極（Ｇ）と電気的に接続され（ゲート（Ｇ），エミッタ（Ｅ）間に）、ゲート駆動回路から出力されるゲート信号（制御信号）が入力される。他方の制御外部端子１６ｂは、下アーム１１ｂであるスイッチング素子Ｔｒ２の制御電極（Ｇ）と電気的に接続され、ゲート駆動回路から出力されるゲート信号（制御信号）が入力される。すなわち、３つの半導体装置１０の各々は、制御外部端子１６ａ，１６ｂに入力される制御信号により、直列接続された２つのスイッチング素子Ｔｒ１及びＴｒ２が正極外部端子１３及び負極外部端子１４間の電気的接続をオン・オフするように構成されている。 The positive external terminal 13 corresponds to the input node portion Nd1 in FIG. 1 and is electrically connected to the second main electrode (C) of the switching element Tr1. The negative external terminal 14 corresponds to the output node portion Nd2 in FIG. 1 and is electrically connected to the first main electrode (E) of the switching element Tr2. The output external terminal 15 corresponds to the output node portion Nd3 in FIG. 1 and is electrically connected to the first main electrode (E) of the switching element Tr1 and the second main electrode (C) of the switching element Tr2. One control external terminal 16a of the two control external terminals 16a and 16b is electrically connected to the control electrode (G) of the switching element Tr1, which is the upper arm 11a, as shown in FIG. ) and the emitter (E)), a gate signal (control signal) output from the gate drive circuit is input. The other control external terminal 16b is electrically connected to the control electrode (G) of the switching element Tr2, which is the lower arm 11b, and receives a gate signal (control signal) output from the gate drive circuit. That is, in each of the three semiconductor devices 10, the two switching elements Tr1 and Tr2 connected in series are electrically connected between the positive external terminal 13 and the negative external terminal 14 by control signals input to the control external terminals 16a and 16b. Configured to turn connections on and off.

＜コンデンサユニット＞
図２に示すように、コンデンサユニット４は、各々の長手方向をＸ方向に揃えた状態でＸ方向（第１方向）と直交するＹ方向（第２方向）に沿って配列され、かつ中間導電部材４５で直列接続された複数のコンデンサとして例えば２つ電解コンデンサ４１ａ及び４１ｂを有している。２つの電解コンデンサ４１ａ及び４１ｂとしては、これに限定されないが、同一容量で同一形状のものを用いている。電解コンデンサ４１ａ及び４１ｂは、円柱形状からなり、長手方向の一端面に２つの端子として正極コンデンサ端子４２Ｐ及び負極コンデンサ端子４２Ｎを有する。 <Capacitor unit>
As shown in FIG. 2, the capacitor units 4 are arranged along the Y direction (second direction) orthogonal to the X direction (first direction) with their longitudinal directions aligned with the X direction. For example, two electrolytic capacitors 41a and 41b are provided as the plurality of capacitors connected in series with the member 45. FIG. The two electrolytic capacitors 41a and 41b have the same capacity and the same shape, although not limited thereto. Each of the electrolytic capacitors 41a and 41b has a cylindrical shape, and has a positive capacitor terminal 42P and a negative capacitor terminal 42N as two terminals on one end face in the longitudinal direction.

図２に示すように、中間導電部材４５は、互いに隣り合う２つの電解コンデンサ４１ａ，４１ｂにおいて、一方の電解コンデンサ４１ａの負極コンデンサ端子４２Ｎ及び他方の電解コンデンサ４１ｂの正極コンデンサ端子４２Ｐに電気的にかつ機械的に接続され、互いに隣り合う２つの電解コンデンサ４１ａ及び４１ｂを直列接続している。そして、一方の電解コンデンサ４１ａの正極コンデンサ端子４２Ｐがコンデンサユニット４の一方の端子としての正極ユニット端子４Ｐとなり、他方の電解コンデンサ４１ｂの負極コンデンサ端子４２Ｎがコンデンサユニット４の他方の端子としての負極ユニット端子４Ｎとなる。 As shown in FIG. 2, the intermediate conductive member 45 is electrically connected to the negative capacitor terminal 42N of one electrolytic capacitor 41a and the positive capacitor terminal 42P of the other electrolytic capacitor 41b in the two electrolytic capacitors 41a and 41b adjacent to each other. Two electrolytic capacitors 41a and 41b, which are mechanically connected and adjacent to each other, are connected in series. The positive electrode capacitor terminal 42P of one electrolytic capacitor 41a serves as a positive electrode unit terminal 4P as one terminal of the capacitor unit 4, and the negative electrode capacitor terminal 42N of the other electrolytic capacitor 41b serves as a negative electrode unit as the other terminal of the capacitor unit 4. It becomes terminal 4N.

＜導電部材、配置＞
図２、図４及び図５に示すように、半導体装置１０、正極導電部材２０及び負極導電部材３０を含むインバータユニット２は、Ｘ方向において、コンデンサユニット４の中間導電部材４５側に配置されている。
図２から図５に示すように、中間導電部材４５、正極導電部材２０及び負極導電部材３０は、Ｘ方向及びＹ方向と直交するＺ方向において、電気的に絶縁分離された状態で積層されている。この実施形態において、中間導電部材４５、正極導電部材２０及び負極導電部材３０は、これに限定されないが、例えば下側から中間導電部材４５、絶縁体５１、正極導電部材２０、絶縁体５２、負極導電部材３０の順で積層されている。 <Conductive member, placement>
As shown in FIGS. 2, 4 and 5, the inverter unit 2 including the semiconductor device 10, the positive electrode conductive member 20 and the negative electrode conductive member 30 is arranged on the intermediate conductive member 45 side of the capacitor unit 4 in the X direction. there is
As shown in FIGS. 2 to 5, the intermediate conductive member 45, the positive electrode conductive member 20, and the negative electrode conductive member 30 are laminated while being electrically insulated and separated in the Z direction perpendicular to the X direction and the Y direction. there is In this embodiment, the intermediate conductive member 45, the positive electrode conductive member 20, and the negative electrode conductive member 30 are, but not limited to, the intermediate conductive member 45, the insulator 51, the positive electrode conductive member 20, the insulator 52, and the negative electrode from the bottom. The conductive members 30 are laminated in this order.

図４に示すように、正極導電部材２０は、半導体装置１０の正極外部端子１３及びコンデンサユニット４の正極ユニット端子４Ｐと電気的に接続されている。図２に示すように、負極導電部材３０は、半導体装置１０の負極外部端子１４及びコンデンサユニット４の負極ユニット端子４Ｎと電気的に接続されている。すなわち、コンデンサユニット４は、図１に示すように、正極電源ライン８Ｐと負極電源ライン８Ｎとの間に並列接続で挿入されている。 As shown in FIG. 4 , the positive electrode conductive member 20 is electrically connected to the positive electrode external terminal 13 of the semiconductor device 10 and the positive electrode unit terminal 4P of the capacitor unit 4 . As shown in FIG. 2 , the negative conductive member 30 is electrically connected to the negative external terminal 14 of the semiconductor device 10 and the negative unit terminal 4N of the capacitor unit 4 . That is, as shown in FIG. 1, the capacitor unit 4 is inserted in parallel between the positive power line 8P and the negative power line 8N.

図３及び図５に示すように、中間導電部材４５は、Ｚ方向において、正極導電部材２０及び負極導電部材３０と重なる第１導電部４６と、第１導電部４６からＺ方向に立ち上がって電解コンデンサ４１ａ，４１ｂの一端面と対向し、かつ電解コンデンサ４１ａの負極コンデンサ端子４２Ｎ及び電解コンデンサ４１ｂの正極コンデンサ端子４２Ｐにそれぞれ接続された第２導電部４７とを有するＬ字形で形成されている。第１導電部４６は、一方の電解コンデンサ４１ａの負極コンデンサ端子４２Ｎと他方の電解コンデンサ４１ｂの正極コンデンサ端子４２Ｐとの離間距離よりもＹ方向に長く延伸し、正極導電部材２０及び負極導電部材３０と重なる面積を確保している。中間導電部材４５は、第２導電部４７が一方の電解コンデンサ４１ａの負極コンデンサ端子４２Ｎ及び他方の電解コンデンサ４１ｂの正極コンデンサ端子４２Ｐに締結部材によって締結固定されている。 As shown in FIGS. 3 and 5, the intermediate conductive member 45 includes a first conductive portion 46 that overlaps the positive electrode conductive member 20 and the negative electrode conductive member 30 in the Z direction, and a first conductive portion 46 that rises from the first conductive portion 46 in the Z direction to perform electrolysis. It is formed in an L shape having a second conductive portion 47 facing one end surfaces of the capacitors 41a and 41b and connected to the negative electrode capacitor terminal 42N of the electrolytic capacitor 41a and the positive electrode capacitor terminal 42P of the electrolytic capacitor 41b, respectively. The first conductive portion 46 extends longer in the Y direction than the separation distance between the negative electrode capacitor terminal 42N of one electrolytic capacitor 41a and the positive electrode capacitor terminal 42P of the other electrolytic capacitor 41b. The area that overlaps with is secured. The second conductive portion 47 of the intermediate conductive member 45 is fastened and fixed to the negative capacitor terminal 42N of one electrolytic capacitor 41a and the positive capacitor terminal 42P of the other electrolytic capacitor 41b by fastening members.

図３及び図４に示すように、正極導電部材２０は、Ｚ方向において中間導電部材４５の第１導電部４６と重なる重畳領域２１ａを有し、かつ中間導電部材４５よりも面積が大きい板状の正極バッファ部２１と、正極バッファ部２１のＹ方向の両端及びＸ方向のコンデンサユニット４側とは反対側の端の計３つの端からそれぞれ分岐された正極第１分岐部２２と、を備えている。また、正極導電部材２０は、正極バッファ部２１のＹ方向の両端のうちの正極ユニット端子４Ｐ側の端から分岐された正極第２分岐部２３を備えている。 As shown in FIGS. 3 and 4, the positive electrode conductive member 20 has an overlapping region 21a that overlaps the first conductive portion 46 of the intermediate conductive member 45 in the Z direction, and has a plate shape with a larger area than the intermediate conductive member 45. and a positive electrode first branch portion 22 branched from each of the three ends of the positive electrode buffer portion 21 in the Y direction and the end opposite to the capacitor unit 4 side in the X direction. ing. In addition, the positive electrode conductive member 20 includes a positive electrode second branch portion 23 branched from the end of the positive electrode buffer portion 21 on the positive electrode unit terminal 4P side of both ends in the Y direction.

正極第２分岐部２３は、これに限定されないが、正極バッファ部２１から引き出された正極引出し部２４と、この正極引出し部２４に連結された正極金具２５と、外部電源として第１基準電圧（例えば４００Ｖ×√２）が印加される第１基準電圧印加部２６とを有している。この第１基準電圧印加部２６に第１基準電圧を印加することにより、正極導電部材２０及び正極ユニット端子４Ｐが第１基準電圧の電位に電位固定される。 The positive electrode second branch portion 23 includes, but is not limited to, a positive electrode lead-out portion 24 led out from the positive electrode buffer portion 21, a positive electrode metal fitting 25 connected to the positive electrode lead-out portion 24, and a first reference voltage ( For example, it has a first reference voltage applying section 26 to which 400 V×√2) is applied. By applying the first reference voltage to the first reference voltage applying section 26, the potential of the positive electrode conductive member 20 and the positive electrode unit terminal 4P is fixed at the potential of the first reference voltage.

図２及び図３に示すように、負極導電部材３０は、Ｚ方向において中間導電部材４５の第１導電部４６と重なる重畳領域３１ａを有し、Ｚ方向において正極バッファ部２１と重なり、かつ中間導電部材４５よりも面積が大きい板状の負極バッファ部３１と、正極第１分岐部２２に対応して負極バッファ部３１の端からそれぞれ分岐された負極第１分岐部３２と、を備えている。また、負極導電部材３０は、負極バッファ部３１のＹ方向の両端のうちの負極ユニット端子４Ｎ側の端から分岐された負極第２分岐部３３を備えている。 As shown in FIGS. 2 and 3, the negative electrode conductive member 30 has an overlap region 31a that overlaps the first conductive portion 46 of the intermediate conductive member 45 in the Z direction, overlaps the positive electrode buffer portion 21 in the Z direction, and has an intermediate region 31a. A plate-shaped negative electrode buffer portion 31 having an area larger than that of the conductive member 45 , and negative electrode first branch portions 32 branched from ends of the negative electrode buffer portion 31 corresponding to the positive electrode first branch portions 22 . . Further, the negative electrode conductive member 30 includes a negative electrode second branch portion 33 branched from one of both ends of the negative electrode buffer portion 31 in the Y direction, which is located on the side of the negative electrode unit terminal 4N.

負極第２分岐部３３は、これに限定されないが、負極バッファ部３１から引き出された負極引出し部３４と、この負極引出し部３４に連結された負極金具３５と、外部電源として第１基準電圧よりも低い第２基準電圧（例えば０Ｖ）が印加される第２基準電圧印加部３６とを有している。この第２基準電圧印加部３６に第２基準電圧を印加することにより、負極導電部材３０及び負極ユニット端子４Ｎが第２基準電圧の電位に電位固定される。 The negative electrode second branch portion 33 includes, but is not limited to, a negative electrode lead-out portion 34 led out from the negative electrode buffer portion 31, a negative electrode metal fitting 35 connected to the negative electrode lead-out portion 34, and an external power supply from a first reference voltage. and a second reference voltage application section 36 to which a second reference voltage (for example, 0 V) is applied. By applying the second reference voltage to the second reference voltage applying section 36, the negative electrode conductive member 30 and the negative electrode unit terminal 4N are fixed at the potential of the second reference voltage.

図２及び図４に示すように、第１基準電圧印加部２６及び第２基準電圧印加部３６は、正極バッファ部２１及び負極バッファ部３１のコンデンサユニット４側に配置されている。そして、第１基準電圧印加部２６及び第２基準電圧印加部３６は、図５に示すように、中間導電部材４５のＹ方向の延長線上に配置されている。
図２及び図４に示すように、正極第１分岐部２２及び負極第１分岐部３２の個数は半導体装置１０の個数に対応しており、この実施形態では３つの半導体装置１０を備えているので、正極第１分岐部２２及び負極第１分岐部３２をそれぞれ３つ備えている。 As shown in FIGS. 2 and 4 , the first reference voltage application section 26 and the second reference voltage application section 36 are arranged on the capacitor unit 4 side of the positive electrode buffer section 21 and the negative electrode buffer section 31 . As shown in FIG. 5, the first reference voltage applying section 26 and the second reference voltage applying section 36 are arranged on an extension line of the intermediate conductive member 45 in the Y direction.
As shown in FIGS. 2 and 4, the number of positive electrode first branch portions 22 and negative electrode first branch portions 32 corresponds to the number of semiconductor devices 10, and three semiconductor devices 10 are provided in this embodiment. Therefore, three positive electrode first branch portions 22 and three negative electrode first branch portions 32 are provided.

図２及び図４に示すように、半導体装置１０は、正極バッファ部２１及び負極バッファ部３１の周囲に正極第１分岐部２２及び負極第１分岐部３２に対応して配置されている。すなわち、半導体装置１０は、正極バッファ部２１及び負極バッファ部３１のＹ方向の両端側及びＸ方向のコンデンサユニット４側とは反対側にそれぞれ配置されている。そして、半導体装置１０は、正極外部端子１３が正極第１分岐部２２に電気的にかつ機械的に接続され、負極外部端子１４が負極第１分岐部３２に電気的にかつ機械的に接続されている。正極外部端子１３と正極第１分岐部２２との接続、及び負極外部端子１４と負極第１分岐部３２との接続は、例えば締結部材の締結力によって行われている。 As shown in FIGS. 2 and 4 , the semiconductor device 10 is arranged around the positive electrode buffer portion 21 and the negative electrode buffer portion 31 so as to correspond to the positive electrode first branch portion 22 and the negative electrode first branch portion 32 . That is, the semiconductor device 10 is arranged on both ends of the positive electrode buffer portion 21 and the negative electrode buffer portion 31 in the Y direction and on the side opposite to the capacitor unit 4 side in the X direction. In the semiconductor device 10 , the positive electrode external terminal 13 is electrically and mechanically connected to the positive electrode first branch portion 22 , and the negative electrode external terminal 14 is electrically and mechanically connected to the negative electrode first branch portion 32 . ing. The connection between the positive electrode external terminal 13 and the positive electrode first branch portion 22 and the connection between the negative electrode external terminal 14 and the negative electrode first branch portion 32 are performed by, for example, the fastening force of a fastening member.

３つの半導体装置１０（１０ｕ，１０ｖ，１０ｗ）のうちの２つの半導体装置１０ｕ及び１０ｗは、封止体１２の長手方向がＸ方向に沿うようにして正極バッファ部２１及び負極バッファ部３１のＹ方向の両側に配置されている。そして、残りの半導体装置１０ｖは、封止体１２の長手方向がＹ方向に沿うようにしてＸ方向のコンデンサユニット４側とは反対側に配置されている。 Of the three semiconductor devices 10 (10u, 10v, 10w), two semiconductor devices 10u and 10w are arranged such that the longitudinal direction of the sealing body 12 is aligned with the X direction, and the Y direction of the positive electrode buffer portion 21 and the negative electrode buffer portion 31 is aligned. located on both sides of the direction. The remaining semiconductor device 10v is arranged on the side opposite to the capacitor unit 4 side in the X direction so that the longitudinal direction of the sealing body 12 is along the Y direction.

図４に示すように、正極導電部材２０の正極第２分岐部２３は、コンデンサユニット４の正極ユニット端子４Ｐと電気的にかつ機械的に接続されている。正極第２分岐部２３の正極引出し部２４は、正極金具２５の一端側に例えば締結部材によって締結固定され、正極金具２５の他端側はコンデンサユニット４の正極ユニット端子４Ｐに例えば締結部材によって締結固定されている。
また、図２に示すように、負極導電部材３０の負極第２分岐部３３は、コンデンサユニット４の負極ユニット端子４Ｎと電気的にかつ機械的に接続されている。負極第２分岐部３３の負極引出し部３４は負極金具３５の一端側に例えば締結部材の締結力によって固定され、負極金具３５の他端側はコンデンサユニット４の負極ユニット端子４Ｎに例えば締結部材によって締結固定されている。 As shown in FIG. 4 , the positive electrode second branch portion 23 of the positive electrode conductive member 20 is electrically and mechanically connected to the positive electrode unit terminal 4</b>P of the capacitor unit 4 . The positive electrode lead-out portion 24 of the positive electrode second branch portion 23 is fastened and fixed to one end side of the positive electrode metal fitting 25 by, for example, a fastening member, and the other end of the positive electrode metal fitting 25 is fastened to the positive electrode unit terminal 4P of the capacitor unit 4 by, for example, a fastening member. Fixed.
Further, as shown in FIG. 2 , the negative electrode second branch portion 33 of the negative electrode conductive member 30 is electrically and mechanically connected to the negative electrode unit terminal 4N of the capacitor unit 4 . The negative electrode lead-out portion 34 of the negative electrode second branch portion 33 is fixed to one end side of the negative electrode metal fitting 35 by, for example, a fastening force of a fastening member, and the other end side of the negative electrode metal fitting 35 is fixed to the negative electrode unit terminal 4N of the capacitor unit 4 by, for example, a fastening member. fastening is fixed.

＜第１実施形態の効果＞
次に、この第１実施形態の主要な効果について説明する。
図６に、スイッチング素子Ｔｒ１，Ｔｒ２のオン・オフ動作時に負極導電部材３０の負極バッファ部３１を流れる主回路電流の方向（矢印Ｎ１）と、コンデンサユニット４の放電時に中間導電部材４５の第１導電部４６を流れる電流の方向（矢印Ｓ１）を示す。また、図７に、スイッチング素子Ｔｒ１，Ｔｒ２のオン・オフ動作時に正極導電部材２０の正極バッファ部２１を流れる主回路電流の方向（矢印Ｐ１）と、コンデンサユニット４の放電時に中間導電部材４５の第１導電部４６を流れる電流の方向（矢印Ｓ１）を示す。また、図３に矢印Ｐ１及び矢印Ｎ１を示す。 <Effects of the first embodiment>
Next, main effects of this first embodiment will be described.
6 shows the direction (arrow N1) of the main circuit current flowing through the negative electrode buffer portion 31 of the negative electrode conductive member 30 when the switching elements Tr1 and Tr2 are turned on and off, and the direction of the main circuit current flowing through the negative electrode buffer portion 31 of the negative electrode conductive member 30 when the capacitor unit 4 is discharged. The direction of current flowing through the conductive portion 46 (arrow S1) is shown. 7 shows the direction (arrow P1) of the main circuit current flowing through the positive electrode buffer portion 21 of the positive electrode conductive member 20 when the switching elements Tr1 and Tr2 are turned on and off, and the direction of the intermediate conductive member 45 when the capacitor unit 4 is discharged. The direction (arrow S1) of current flowing through the first conductive portion 46 is shown. Also, FIG. 3 shows an arrow P1 and an arrow N1.

この第１実施形態に係る電力変換装置１は、第１基準電圧印加部２６及び第２基準電圧印加部３６に、外部電源の正極及び負極が接続（第１及び第２基準電圧が印加）される。そして、半導体装置１０の制御外部端子１６ａ及び１６ｂに制御信号が印加されてスイッチング素子Ｔｒ１及びＴｒ２がオン・オフ動作することにより、正極外部端子１３と負極外部端子１４との間がオン・オフ状態（導通状態／非導通状態）となる。そして、第１基準電圧印加部２６から正極導電部材２０、半導体装置１０及び負極導電部材３０を通して第２基準電圧印加部３６までの電流経路に主回路電流が流れる。 In the power conversion device 1 according to the first embodiment, the positive and negative electrodes of an external power supply are connected to the first reference voltage application section 26 and the second reference voltage application section 36 (the first and second reference voltages are applied). be. A control signal is applied to the control external terminals 16a and 16b of the semiconductor device 10 to turn on/off the switching elements Tr1 and Tr2, whereby the positive external terminal 13 and the negative external terminal 14 are turned on/off. (conducting state/non-conducting state). Then, the main circuit current flows from the first reference voltage applying section 26 to the second reference voltage applying section 36 through the positive conductive member 20 , the semiconductor device 10 and the negative conductive member 30 .

このとき、第１基準電圧印加部２６と、第２基準電圧印加部３６とが、正極バッファ部２１及び負極バッファ部３１のコンデンサユニット４側に配置されているため、Ｚ方向に互いに近接配置された正極バッファ部２１及び負極バッファ部３１では、主回路電流の流れが相対的に逆になる。すなわち、図３及び図７に示すように、正極バッファ部２１での主回路電流は矢印Ｐ１の方向に流れ、図３及び図６に示すように、負極バッファ部３１での主回路電流は矢印Ｎ１の方向に流れる。したがって、正極導電部材２０及び負極導電部材３０では発生する磁束が相殺されるため、コンデンサユニット４、正極導電部材２０、半導体装置１０及び負極導電部材３０を含む一巡の電流経路における配線インダクタンスを低減することができる。 At this time, since the first reference voltage application section 26 and the second reference voltage application section 36 are arranged on the capacitor unit 4 side of the positive electrode buffer section 21 and the negative electrode buffer section 31, they are arranged close to each other in the Z direction. In the positive electrode buffer section 21 and the negative electrode buffer section 31, the flow of the main circuit current is relatively reversed. That is, as shown in FIGS. 3 and 7, the main circuit current in the positive buffer section 21 flows in the direction of arrow P1, and as shown in FIGS. It flows in the direction of N1. Therefore, since the magnetic flux generated in the positive electrode conductive member 20 and the negative electrode conductive member 30 cancel each other out, the wiring inductance in a circuit current path including the capacitor unit 4, the positive electrode conductive member 20, the semiconductor device 10, and the negative electrode conductive member 30 is reduced. be able to.

また、図６及び図７に示すように、中間導電部材４５の第１導電部４６では、コンデンサユニット４の放電時に放電電流が矢印Ｓ１の方向に流れる。このとき、図７に示すように、第１基準電圧印加部２６が中間導電部材４５の第１導電部４６のＹ方向の延長線上に配置されているため、正極バッファ部２１の重畳領域２１ａでの主回路電流の流れ方向（矢印Ｐ１）と、中間導電部材４５の第１導電部４６での放電電流の流れ方向（矢印Ｓ１）とが相対的に逆になる。また、図６に示すように、第２基準電圧印加部３６が中間導電部材４５の第１導電部４６のＹ方向の延長線上に配置されているため、負極バッファ部３１の重畳領域３１ａでの主回路電流の流れ方向（矢印Ｎ１）と、中間導電部材４５の第１導電部４６での放電電流の流れ方向（矢印Ｓ１）とが相対的に逆になる。したがって、中間導電部材４５では発生する磁束が相殺されるため、コンデンサユニット４、正極導電部材２０、半導体装置１０及び負極導電部材３０を含む一巡の電流経路における配線インダクタンスを更に低減することができる。 Further, as shown in FIGS. 6 and 7, in the first conductive portion 46 of the intermediate conductive member 45, the discharge current flows in the direction of the arrow S1 when the capacitor unit 4 is discharged. At this time, as shown in FIG. 7, since the first reference voltage applying portion 26 is arranged on the Y-direction extension of the first conductive portion 46 of the intermediate conductive member 45, the overlapping region 21a of the positive electrode buffer portion 21 The flow direction of the main circuit current (arrow P1) is relatively opposite to the flow direction of the discharge current (arrow S1) in the first conductive portion 46 of the intermediate conductive member 45 . Further, as shown in FIG. 6, since the second reference voltage application portion 36 is arranged on the extension line in the Y direction of the first conductive portion 46 of the intermediate conductive member 45, The flow direction of the main circuit current (arrow N1) and the flow direction of the discharge current in the first conductive portion 46 of the intermediate conductive member 45 (arrow S1) are relatively opposite. Therefore, since the magnetic fluxes generated in the intermediate conductive member 45 are canceled out, the wiring inductance in a circuit current path including the capacitor unit 4, the positive electrode conductive member 20, the semiconductor device 10, and the negative electrode conductive member 30 can be further reduced.

また、この第１実施形態に係る電力変換装置１では、半導体装置１０、正極導電部材２０及び負極導電部材３０が、電解コンデンサ４１ａ，４１ｂの長手方向（Ｘ方向）において、コンデンサユニット４の中間導電部材４５側に平面的に配置されている。したがって、電力変換装置１は、電解コンデンサ４１ａ，４１ｂの長手方向をＺ方向に揃えた場合（Ｚ方向に立てた場合）や、インバータユニット２とコンデンサユニット４とをＺ方向に積層配置した場合と比較して、薄型化を図ことができる。
以上のことから、この第１実施形態の電力変換装置１によれば、薄型化を図りつつ、簡単な構成で、低インダクタンス化を図ることができる。 Further, in the power conversion device 1 according to the first embodiment, the semiconductor device 10, the positive electrode conductive member 20 and the negative electrode conductive member 30 are arranged in the intermediate conductive region of the capacitor unit 4 in the longitudinal direction (X direction) of the electrolytic capacitors 41a and 41b. It is arranged planarly on the member 45 side. Therefore, the electric power conversion device 1 can be used in the case where the longitudinal directions of the electrolytic capacitors 41a and 41b are aligned in the Z direction (when the inverter unit 2 and the capacitor unit 4 are stacked in the Z direction). By comparison, thinning can be achieved.
As described above, according to the power conversion device 1 of the first embodiment, it is possible to reduce the inductance with a simple configuration while achieving a reduction in thickness.

この第１実施形態に係る電力変換装置１では、互いに隣り合う２つの電解コンデンサ４１ａ及び４１ｂを直列接続する中間導電部材４５がＬ字形状になっている。このため、一方の電解コンデンサ４１ａの負極コンデンサ端子４２Ｎ及び他方の電解コンデンサ４１ｂの正極コンデンサ端子４２Ｐに中間導電部材４５の第２導電部４７を締結部材で締結固定してコンデンサユニット４を組み立てた後でも、中間導電部材４５の第１導電部４６に正極導電部材２０及び負極導電部材３０を容易に重ね合わせることができるため、電力変換装置１の製造における作業効率を向上させることができる。 In the power converter 1 according to the first embodiment, the intermediate conductive member 45 that connects the two adjacent electrolytic capacitors 41a and 41b in series has an L shape. Therefore, after the second conductive portion 47 of the intermediate conductive member 45 is fastened and fixed to the negative capacitor terminal 42N of one electrolytic capacitor 41a and the positive capacitor terminal 42P of the other electrolytic capacitor 41b with a fastening member, the capacitor unit 4 is assembled. However, since the positive electrode conductive member 20 and the negative electrode conductive member 30 can be easily superimposed on the first conductive portion 46 of the intermediate conductive member 45, the work efficiency in manufacturing the power converter 1 can be improved.

この第１実施形態に係る電力変換装置１では、コンデンサユニット４のユニット端子４Ｐ，４Ｎから各半導体装置１０までの電流経路の途中に、中間導電部材４５の第１導電部４６、正極導電部材２０の正極バッファ部２１及び負極導電部材３０の負極バッファ部３１を積層した積層体が挿入されている。この積層体は、正極バッファ部２１及び負極バッファ部３１で主回路電流の流れが相対的に逆になるラミネート構造になっている。また、正極バッファ部２１の重畳領域２１ａでの主回路電流の流れ方向（矢印Ｐ１）と、中間導電部材４５の第１導電部４６での放電電流の流れ方向（矢印Ｓ１）とが相対的に逆になるラミネート構造になっている。また、負極バッファ部３１の重畳領域３１ａでの主回路電流の流れ方向（矢印Ｎ１）と、中間導電部材４５の第１導電部４６での放電電流の流れ方向（矢印Ｓ１）とが相対的に逆になるラミネート構造になっている。このため、この実施形態に係る半導体装置１０では、コンデンサユニット４から各半導体装置１０までの配線インダクタンスのアンバランスを低減することができる。 In the power conversion device 1 according to the first embodiment, the first conductive portion 46 of the intermediate conductive member 45 and the positive electrode conductive member 20 are arranged in the middle of the current path from the unit terminals 4P and 4N of the capacitor unit 4 to each semiconductor device 10. A laminate obtained by laminating the positive electrode buffer portion 21 and the negative electrode buffer portion 31 of the negative electrode conductive member 30 is inserted. This laminate has a laminate structure in which the main circuit current flows in the positive electrode buffer portion 21 and the negative electrode buffer portion 31 in relatively opposite directions. Also, the flow direction of the main circuit current in the overlapping region 21a of the positive electrode buffer portion 21 (arrow P1) is relative to the flow direction of the discharge current in the first conductive portion 46 of the intermediate conductive member 45 (arrow S1). It has an inverted laminate structure. Also, the flow direction of the main circuit current in the overlapping region 31a of the negative electrode buffer portion 31 (arrow N1) and the flow direction of the discharge current in the first conductive portion 46 of the intermediate conductive member 45 (arrow S1) are relative to each other. It has an inverted laminate structure. Therefore, in the semiconductor device 10 according to this embodiment, the imbalance of wiring inductance from the capacitor unit 4 to each semiconductor device 10 can be reduced.

この第１実施形態に係る電力変換装置１では、積層された正極バッファ部２１及び負極バッファ部３１の周囲に３つの半導体装置１０が配置されている。このため、この第１実施形態に係る電力変換装置１では、ラミネート構造になっていない正極第１分岐部２２及び負極第１分岐部３２の配線長を半導体装置１０毎に均一にでき、コンデンサユニット４から各半導体装置１０までの配線インダクタンスをバランスさせることができる。 In the power conversion device 1 according to the first embodiment, three semiconductor devices 10 are arranged around the stacked positive electrode buffer section 21 and negative electrode buffer section 31 . Therefore, in the power conversion device 1 according to the first embodiment, the wiring lengths of the positive electrode first branch portion 22 and the negative electrode first branch portion 32, which do not have a laminated structure, can be made uniform for each semiconductor device 10, and the capacitor unit 4 to each semiconductor device 10 can be balanced.

近年、ＳｉＣ、ＧａＮと言ったワイドバンドギャップ半導体からなるスイッチング素子では、従来以上にスイッチング特性の高速化、低損失化が進むほど、コンデンサユニット４から各半導体装置１０までの配線インダクタンスのバラツキが損失のアンバランスの原因となり、過剰な冷却性能が必要となる場合があるため、装置の大型化が懸念される。これに対し、この第１実施形態に係る電力変換装置１では、コンデンサユニット４から各半導体装置１０までの配線インダクタンスのアンバランスを低減することができると共に、配線インダクタンスをバランスさせることができるので、ＳｉＣ、ＧａＮと言ったワイドバンドギャップ半導体からなるスイッチング素子Ｔｒ１，Ｔｒ２を内蔵した半導体装置１０を用いても、過剰な冷却性能が不要であり、装置の小型化を図ることもできる。 In recent years, in switching elements made of wide bandgap semiconductors such as SiC and GaN, as the switching characteristics have become faster and the loss has been reduced more than before, variations in the wiring inductance from the capacitor unit 4 to each semiconductor device 10 have caused losses. This may cause an imbalance in the temperature, and may require excessive cooling performance, so there is a concern that the size of the apparatus may increase. On the other hand, in the power conversion device 1 according to the first embodiment, it is possible to reduce the imbalance of the wiring inductance from the capacitor unit 4 to each semiconductor device 10, and to balance the wiring inductance. Even if the semiconductor device 10 containing the switching elements Tr1 and Tr2 made of wide bandgap semiconductors such as SiC and GaN is used, excessive cooling performance is not required and the size of the device can be reduced.

（第２実施形態）
この第２実施形態に係る電力変換装置１Ａは、前述の実施形態１に係る電力変換装置１と同様に、インバータユニット２及びコンデンサユニット４を備えている。そして、この第２実施形態に係る電力変換装置１Ａは、インバータユニット２及びコンデンサユニット４が取り付けられた取付け面６１を有する放熱器６０を更に備えている。そして、放熱器６０は、その取付け面６１とは反対側に、Ｘ方向に延伸し、かつＹ方向に所定の間隔をおいて配置された複数の放熱フィン６２を有する。 (Second embodiment)
A power converter 1A according to the second embodiment includes an inverter unit 2 and a capacitor unit 4, like the power converter 1 according to the first embodiment. The power converter 1A according to the second embodiment further includes a radiator 60 having a mounting surface 61 on which the inverter unit 2 and the capacitor unit 4 are mounted. The radiator 60 has a plurality of radiation fins 62 extending in the X direction and arranged at predetermined intervals in the Y direction on the side opposite to the mounting surface 61 .

この第２実施形態に係る電力変換装置１Ａにおいて、３つの半導体装置１０（１０ｕ，１０ｖ，１０ｗ）は、放熱フィン６２が延伸するＸ方向に並列されておらず、物理的配置が三角状になっている。したがって、この第２実施形態に係る電力変換装置１Ａでは、隣接する２つの放熱フィン６２の間の通路に冷却媒体を流すことにより、３つの半導体装置１０の各々を均等に冷却することができる。 In the power converter 1A according to the second embodiment, the three semiconductor devices 10 (10u, 10v, 10w) are not arranged in parallel in the X direction in which the radiation fins 62 extend, and are physically arranged in a triangular shape. ing. Therefore, in the power converter 1A according to the second embodiment, each of the three semiconductor devices 10 can be evenly cooled by flowing a cooling medium through the passage between the two adjacent heat radiating fins 62.

なお、上述の第１及び第２実施形態に係る電力変換装置では、三相誘導電動機９のＵ相，Ｖ相，Ｗ相に対応して３つの半導体装置１０（１０ｕ，１０ｖ，１０ｗ）を備えた場合について説明した。しかしながら、本発明は、３つの半導体装置１０に限定されるものではなく、本発明は少なくとも１つ以上の半導体装置１０を備えた電力変換装置に適用することができるが、２つ及び３つの半導体装置１０を備えた場合に特に有用である。 The power converters according to the first and second embodiments described above are provided with three semiconductor devices 10 (10u, 10v, 10w) corresponding to the U-phase, V-phase, and W-phase of the three-phase induction motor 9. I explained the case. However, the present invention is not limited to three semiconductor devices 10, and two and three semiconductor devices, although the present invention can be applied to power converters comprising at least one or more semiconductor devices 10. It is particularly useful with device 10 .

また、上述の第１及び第２実施形態に係る電力変換装置では、導電部材として、中間導電部材４５、正極導電部材２０及び負極導電部材３０をこの順で積層した場合について説明した。しかしながら、本発明は、この積層順に限定されるものではなく、中間導電部材４５、正極導電部材２０及び負極導電部材３０の積層順は特に問わない。
また、上述の第１及び第２実施形態に係る電力変換装置では、コンデンサとして電解コンデンサを備えた場合について説明した。しかしながら、本発明は、電解コンデンサに限定されるものではなく、他のコンデンサを備えた電力変換装置にも適用することができる。 Further, in the power converters according to the first and second embodiments described above, the cases where the intermediate conductive member 45, the positive electrode conductive member 20, and the negative electrode conductive member 30 are laminated in this order as the conductive members have been described. However, the present invention is not limited to this stacking order, and the stacking order of the intermediate conductive member 45, the positive electrode conductive member 20, and the negative electrode conductive member 30 does not matter.
Further, in the power converters according to the above-described first and second embodiments, a case where an electrolytic capacitor is provided as a capacitor has been described. However, the present invention is not limited to electrolytic capacitors, and can also be applied to power converters with other capacitors.

また、上述の第１及び第２の実施形態に係る電力変換装置では、半導体装置に搭載されるスイッチング素子としてＩＧＢＴに着目して説明した。しかしながら、本発明はこれに限定されるものではなく、例えばスイッチング素子としてＭＩＳ型電界効果トランジスタが搭載された半導体装置を有する電力変換装置にも適用することができる。
以上、本発明を上記実施形態に基づき具体的に説明したが、本発明は上記実施形態に限定されるものではなく、その要旨を逸脱しない範囲において種々変更可能であることは勿論である。 Further, in the power converters according to the above-described first and second embodiments, the IGBTs have been described as the switching elements mounted on the semiconductor devices. However, the present invention is not limited to this, and can be applied to, for example, a power converter having a semiconductor device equipped with a MIS field effect transistor as a switching element.
Although the present invention has been specifically described above based on the above embodiments, the present invention is not limited to the above embodiments, and can of course be modified in various ways without departing from the scope of the invention.

１電力変換装置
２インバータユニット
４コンデンサユニット
４Ｐ正極ユニット端子
４Ｎ負極ユニット端子
８Ｐ正極電源ライン
８Ｎ負極電源ライン
９三相誘導電動機
１０（１０ｕ，１０ｖ，１０ｗ）半導体装置
１１ａ上アーム
１１ｂ下アーム
１２封止体
１３正極外部端子
１４負極外部端子
１５出力外部端子
１６ａ，１６ｂ制御外部端子
２０正極導電部材
２１正極バッファ部
２１ａ重畳領域
２２正極第１分岐部
２３正極第２分岐部
２４正極引出し部
２５正極金具
２６第１基準電圧印加部
３０負極導電部材
３１負極バッファ部
３１ａ重畳領域
３２負極第１分岐部
３３負極第２分岐部
３４負極引出し部
３５負極金具
３６第２基準電圧印加部
４１ａ，４１ｂ電解コンデンサ
４２Ｐ正極コンデンサ端子
４２Ｎ負極コンデンサ端子
４５中間導電部材
４６第１導電部
４７第２導電部
５１，５２絶縁体
６０放熱器
６１取付け面
６２放熱フィン
Ｔｒ１，Ｔｒ２スイッチング素子
Ｄｉ１，Ｄｉ２整流素子
REFERENCE SIGNS LIST 1 power converter 2 inverter unit 4 capacitor unit 4P positive unit terminal 4N negative unit terminal 8P positive power supply line 8N negative power supply line 9 three-phase induction motor 10 (10u, 10v, 10w) semiconductor device 11a upper arm 11b lower arm 12 sealing Body 13 Positive electrode external terminal 14 Negative electrode external terminal 15 Output external terminals 16a, 16b Control external terminal 20 Positive electrode conductive member 21 Positive electrode buffer portion 21a Overlapping region 22 Positive electrode first branch portion 23 Positive electrode second branch portion 24 Positive electrode extraction portion 25 Positive electrode metal fitting 26 First reference voltage applying section 30 Negative conductive member 31 Negative buffer section 31a Overlapping area 32 Negative first branch section 33 Negative second branch section 34 Negative electrode extraction section 35 Negative metal fitting 36 Second reference voltage applying section 41a, 41b Electrolytic capacitor 42P Positive electrode Capacitor terminal 42N Negative capacitor terminal 45 Intermediate conductive member 46 First conductive part 47 Second conductive part 51, 52 Insulator 60 Radiator 61 Mounting surface 62 Radiation fin Tr1, Tr2 Switching element Di1, Di2 Rectifying element

Claims

It has a control external terminal, a positive external terminal, and a negative external terminal, and a switching element that turns on/off electrical connection between the positive external terminal and the negative external terminal according to a control signal input to the control external terminal. a semiconductor device;
a capacitor unit having a plurality of capacitors arranged in a second direction orthogonal to the first direction with their longitudinal directions aligned with the first direction and connected in series by an intermediate conductive member;
a positive conductive member electrically connected to the positive external terminal of the semiconductor device and one terminal of the capacitor unit;
a negative electrode conductive member electrically connected to the negative electrode external terminal of the semiconductor device and the other terminal of the capacitor unit;
the semiconductor device, the positive electrode conductive member, and the negative electrode conductive member are arranged planarly on the intermediate conductive member side of the capacitor unit in the first direction;
The intermediate conductive member, the positive electrode conductive member, and the negative electrode conductive member are laminated while being electrically separated in a third direction orthogonal to the first direction and the second direction. conversion device.

The plurality of capacitors have terminals on one end surface in the longitudinal direction,
the intermediate conductive member includes a first conductive portion overlapping the positive electrode conductive member and the negative electrode conductive member in the third direction, and rising from the first conductive portion in the third direction to face one end surface of the capacitor, and a second conductive portion connected to terminals of the capacitor.

The positive electrode conductive member includes a plate-shaped positive buffer portion overlapping the first conductive portion of the intermediate conductive member in the third direction and having a larger area than the intermediate conductive member, and a positive electrode buffer portion on the capacitor unit side. is a positive electrode first branch portion branched from at least two ends of a total of three ends, ie, the opposite end and both ends in the second direction; a positive electrode second branch branched from one terminal side end of the capacitor unit,
The negative electrode conductive member includes a plate-shaped negative electrode buffer portion overlapping the positive electrode buffer portion in the third direction and having a larger area than the intermediate conductive member, and a plate-shaped negative electrode buffer portion corresponding to the positive electrode first branch portion. a negative electrode first branched portion branched from each end; and a negative electrode second branched portion branched from one of both ends of the negative electrode buffer portion in the second direction on the other terminal side of the capacitor unit. death,
The semiconductor device is arranged around the positive electrode buffer portion and the negative electrode buffer portion corresponding to the positive electrode first branch portion and the negative electrode first branch portion, and the positive electrode external terminal is connected to the positive electrode first branch portion. 3. The power converter according to claim 2, wherein the negative external terminal is connected to the negative first branch.

The positive electrode conductive member further has a first reference voltage applying section to which a first reference voltage is applied,
The negative electrode conductive member further has a second reference voltage applying section to which a second reference voltage lower than the first reference voltage is applied,
4. The power conversion device according to claim 3, wherein the first reference voltage application section and the second reference voltage application section are arranged on the capacitor unit side of the positive electrode buffer section and the negative electrode buffer section. .

5. The power converter according to claim 4, wherein the first reference voltage application section and the second reference voltage application section are arranged on an extension line of the intermediate conductive member in the second direction.

The semiconductor device has two switching elements,
the two switching elements are connected in series with a second main electrode of one switching element and a first main electrode of the other switching element;
a first main electrode of one of the switching elements is electrically connected to the positive external terminal;
6. The power converter according to claim 1, wherein the second main electrode of the other switching element is electrically connected to the negative external terminal.

7. The power converter according to claim 1, further comprising a radiator having a mounting surface on which said semiconductor device and said capacitor unit are mounted.

8. The radiator has a plurality of heat radiating fins extending in the first direction and arranged at predetermined intervals in the second direction on the side opposite to the mounting surface. The power conversion device according to .