JP6346542B2 - Portable solar power supply system - Google Patents

Description

  The present invention relates to a portable solar power feeding system, and more particularly to a portable solar power feeding system in which a power generation function and a power feeding function are combined into one portable system.

  Although photovoltaic power generation is being put into practical use as an inexhaustible and clean energy source, the current photovoltaic power generation panel has a structure with an appropriate strength on the premise of a stationary type, and thus the weight of the apparatus is heavy. In addition, since it is direct-current power that is generated by the solar panel, it is not possible to directly drive lighting or equipment that operates with commercial alternating-current power. In order to combine the power generation and supply device into a single device, in addition to the photovoltaic power generation panel, a sine wave inverter or the like that converts DC power into commercial AC power is required. Conversion of a power conversion device such as this sine wave inverter If the efficiency is low, the generated solar energy cannot be fully utilized.

  Patent Document 1 discloses a technique for reducing the loss of a power conversion device that converts DC power of a solar battery or the like into sinusoidal AC power of 50 Hz or 60 Hz by a current resonance type soft switching method. Here, as a conventional technique, there is a configuration including a boost converter, a full-bridge inverter composed of four switching elements, and a circuit that compares a sine wave reference signal with a triangular wave and supplies a PWM control signal to the four switching elements. It is stated.

  Patent Document 2 discloses a configuration including a substantially spherical silicon photoelectric conversion element and a support having a plurality of hexagonal recesses for supporting the photoelectric conversion device as a lightweight and flexible photoelectric conversion device. The diameter of the spherical silicon photoelectric conversion element is about 1 mm, the support is an aluminum thin plate, and the ratio S1 / S2 = 4 of the opening area S1 of the recess and the transverse area S2 of the spherical silicon photoelectric conversion element.

In addition, regarding the technology related to the present invention, Patent Document 3 uses two N-channel silicon carbide (SiC) MOSFETs as bidirectional AC switching, an AC switch having a high breakdown voltage and a low on-resistance, and each source is A series connection configuration is disclosed in which the gates are connected to each other to form one control terminal and each drain to two output terminals. The silicon carbide MOSFET has a planar structure in which an n ⁻ SiC epitaxial layer is formed on an n ⁺ SiC substrate, and a p-well and an n ⁺ source are formed on the surface layer portion. By setting the thickness t of the n ⁻ SiC epitaxial layer to 4 μm and the n ⁻ concentration to 1 × 10 ¹⁶ / cm ³ , the withstand voltage at off time can be 400V, and by setting t to 6 μm, the withstand voltage at off time can be 600V. It is stated that withstand voltage at off can be set to 1200 V by setting t to 10 μm and n ⁻ concentration to 5 × 10 ¹⁵ / cm ³ . In addition, since the silicon carbide MOSFET has a low on-resistance per unit area, it is stated that the on-resistance when the two silicon carbide MOSFETs of the bidirectional AC switch are both turned on can be 10 mΩ to 20 mΩ.

JP 2009-290919 A JP 2006-245134 A JP2011-244387A

  With the Great East Japan Earthquake, there has been a demand for a portable solar power supply system that can be placed in disaster areas in an emergency. Conventionally, photovoltaic power generation panels and power conversion devices such as sine wave inverters have been developed as separate technologies. For example, spherical silicon photoelectric conversion devices with excellent portability and conventional sine wave inverter power Even if the conversion device is simply combined, if the conversion efficiency of the power conversion device is low, the generated solar energy cannot be fully utilized, which is insufficient as an emergency measure.

  The object of the present invention is to improve the power conversion efficiency of the entire system while ensuring the portability of the entire system for a system that generates power by solar energy, converts this into AC power, and supplies power. It is to provide a portable solar power supply system.

A portable photovoltaic power generation system according to the present invention outputs a DC power having a maximum rated voltage of 16 V and a maximum output of 50 W, and a spherical silicon solar cell having a total mass of 3 kg including a support frame , A device independent of the solar cell, and a booster circuit that boosts the output voltage of the solar cell to a DC voltage of 100V, and two arm circuits in which two N-channel silicon carbide MOSFETs are connected in series are connected in parallel to provide 100V An orthogonal power converter that includes an inverter circuit that converts DC power into 100V50Hz or 100V60Hz sinusoidal AC power, has a rated output of 300 W, and an overall mass of 1.3 kg, and a solar cell and an orthogonal power converter are electrically connected to each other. For installing the power line connected to the solar cell, the solar cell and the orthogonal power converter electrically connected to each other at the installation destination And置具, in the configuration, and wherein the free of the secondary battery.
In the portable photovoltaic power supply system according to the present invention, four solar cells are connected in parallel, the DC power having a maximum rated voltage of 16 V and a maximum output of 200 W is output, and the total mass including the support frame is 12 kg. It is preferable that the solar cell connector and the one of the orthogonal power converters with a rated output of 300 W are connected by a power line.

  The portable solar power feeding system having the above-described configuration includes a spherical silicon solar cell supported by a thin and lightweight frame capable of outputting DC power of 15 W or more per kg of the device, and four N-channel carbonizations. And a quadrature power conversion device including a silicon MOSFET. A solar cell having a weight of 15 W or more per kg of the device has about twice the generated power per kg of the device as compared with a conventionally-installed stationary solar cell panel, so that the portability is improved. Further, the silicon carbide MOSFET can have a lower on-resistance than the silicon MOSFET. With this combination, it is possible to improve the power conversion efficiency of the entire photovoltaic power supply system while ensuring the portability of the entire photovoltaic power supply system.

  In the portable photovoltaic power supply system, the orthogonal power conversion device includes an inverter circuit configured by connecting two arm circuits in which two N-channel silicon carbide MOSFETs are connected in series. By appropriately controlling on / off of the four silicon carbide MOSFETs and extracting the output terminals from the series connection points of the two N-channel silicon carbide MOSFETs in the respective arms, the sinusoidal AC power can be efficiently extracted. It is possible to improve the power conversion efficiency of the entire photovoltaic power supply system.

  In the portable photovoltaic power generation system, the orthogonal power converter replaces only four N-channel silicon carbide MOSFETs with four N-channel silicon MOSFETs having the same gate threshold voltage with the same configuration. Compared to sometimes, it has an operating range in which the power conversion efficiency is improved by 2% or more. Since the maximum conversion efficiency of a normal orthogonal power converter is about 85%, the range in which the power conversion efficiency can be improved is about 15%. An improvement of 2% or more among them corresponds to an improvement of about 15% of the range that can be improved.

It is a block diagram of the portable photovoltaic power generation system of embodiment which concerns on this invention. 1A is an overall view, FIG. 1B is an enlarged view of a portion B in FIG. 1A, and FIG. 1C is a cross-sectional view taken along line CC in FIG. It is a specification comparison figure between the spherical silicon type solar cell used with the portable solar power generation electric power feeding system of embodiment which concerns on this invention, and a commercially available stationary solar cell. It is a specification comparison figure between silicon carbide MOSFET used with the portable photovoltaic power generation system of embodiment concerning this invention, and silicon MOSFET with the same gate threshold voltage. About the single unit of the orthogonal power conversion device having the configuration of FIG. 1, input power is supplied from the outside by a constant voltage DC power source, and the power conversion efficiency of the single unit of the orthogonal power conversion device is obtained by comparison with the AC power output to the load. FIG. In FIG. 4, a solid line is a characteristic line when using a silicon carbide MOSFET, and a broken line is a characteristic line when using a silicon MOSFET. With respect to the configuration of FIG. 1, the DC power generated by the spherical silicon solar cell is input, and the power conversion efficiency for the entire portable photovoltaic power supply system is obtained by comparison with the AC power output to the load. FIG. In FIG. 5, a solid line is a characteristic line when using a silicon carbide MOSFET, and a broken line is a characteristic line when using a silicon MOSFET.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following, solar cells, N-channel transistors, AC / DC power converters, etc., of a specific manufacturer will be described, but these are examples used for experiments and may be of other manufacturers.

  The shape, dimensions, number, current value, voltage value, power value, and the like described below are examples, and can be appropriately changed according to the specifications of the portable solar power supply system. Hereinafter, in all the drawings, corresponding elements are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 is a configuration diagram of a portable photovoltaic power supply system 10. FIG. 1A is a diagram showing the overall configuration, FIG. 1B is an enlarged view of a portion B in FIG. 1A, and FIG. 1C is a cross-sectional view taken along line CC in FIG. Hereinafter, the portable photovoltaic power supply system 10 is referred to as a system 10 unless otherwise specified.

  The portable photovoltaic power generation power supply system 10 is temporarily carried in and installed in a place where commercial power supply cannot be received, and the effective voltage value is 100 V at 50 Hz or 60 Hz equivalent to the commercial AC power alone. It is a system which can supply the sine wave alternating current power.

  By this system 10 alone, it means that no fuel, a power storage device, or the like is required unlike a private power generator. Examples of such places include stricken areas where commercial AC power could not be temporarily supplied due to an earthquake, highlands and remote areas where commercial power lines are not laid, and the like.

  The portable type means that the entire system 10 can be transported as it is loaded on a mobile device such as an automobile or a helicopter, and in some cases, it can be transported by manpower by being divided into individual components.

  The system 10 includes a plurality of spherical silicon solar cells 12, an orthogonal power converter 14, a power line 16 that electrically connects them to each other, and a plurality of elements for installing these elements at a destination (not shown). It is composed of installation tools. An example of the installation tool is a folding frame. The load 18 is a device or the like that is operated by sinusoidal AC power supplied from the system 10. In FIG. The input-side power measurement device 20 and the output-side power measurement device 22 indicated by the broken line frame are not components of the system 10, but are devices used to measure power conversion efficiency described later.

  The spherical silicon type solar cell 12 is a solar cell panel supported by a thin and light frame capable of outputting DC power of 15 W or more per kg of the device. In FIG. 1, four spherical silicon solar cells 12 are connected in parallel by power lines. FIG. 2 shows typical specifications of the spherical silicon type solar cell 12. As a comparative example, typical specifications of a commercially available stationary solar cell are also shown. As the spherical silicon type solar cell 12, the model CVFM-0540T2-WH of 21 Clean Ventures is shown, and as the stationary solar cell on the market, the type ND-142CU using the polycrystalline silicon of Sharp is used. Indicated. This solar cell of Sharp Corporation is for private power generation, and is installed and installed on the roof of a house, for example.

  As shown in FIG. 2, the spherical silicon solar cell 12 has two distinct differences from a commercially available stationary solar cell. One has a thickness of 4 mm, which is 1/12 of a commercially available stationary solar cell having a thickness of 46 mm, and can be bent by hand. This is because a commercially available stationary solar cell is made of thick glass and the light-receiving surface side is protected, whereas the spherical silicon solar cell 12 does not require glass. Another is that the generated power per unit weight is large due to the small thickness. Comparing the maximum rated output / weight, the spherical silicon solar cell 12 is 54 W / 3.0 kg, and 18 W, which is 15 W or more per kg. On the other hand, a commercially available stationary solar cell is 142 W / 14.5 kg and 9.8 W per kg. In other words, when compared per unit weight, the spherical silicon solar cell 12 has a maximum rated output that is approximately twice that of a commercially available stationary solar cell. From this difference, it can be seen that the spherical silicon solar cell 12 is more portable than a commercially available stationary solar cell. Moreover, since the weight of the spherical silicon solar cell 12 is 3.0 kg, it can be easily transported by human power. However, a commercially available stationary solar cell has a weight of 14.5 kg, Carrying is not so easy.

  Returning to FIG. 1 again, the structure of the spherical silicon type photoelectric conversion portion, which is the reason why the spherical silicon type solar cell 12 has a thin and light feature, will be described with reference to FIGS. 1B and 1C. To do. As shown in FIG. 1A, the spherical silicon solar cell 12 has a structure in which a plurality of solar cell blocks 32 are connected in series and in parallel, and the outer shape is held by a frame 30.

  FIG.1 (b) is an enlarged view by the side of the light-receiving surface about B part in (a). The solar cell block 32 of the spherical silicon type solar cell 12 has a spherical silicon 34 having a diameter of about 1 mm fixed to the bottom of a recess 36 having a hexagonal outline as one photoelectric conversion element. Many are arranged on a two-dimensional plane. The spacing between the hexagonal parallel contour lines is about 2.3 mm. The concave portion 36 has a function of stably fixing the spherical silicon 34 to the bottom portion and a function of reflecting incident sunlight and condensing it on the spherical silicon 34. The outer bottom surfaces of the plurality of recesses 36 are supported by a frame 30 made of an aluminum plate or the like via an appropriate insulating layer.

  FIG.1 (c) is sectional drawing along CC line of (b). One spherical silicon 34 has a core portion of p-type silicon 40 and a shell portion covering the outer peripheral surface of n-type silicon 42. Solar energy is converted into electric energy by a pn junction between the two. In the recess 36, the outer conductive layer 46 is electrically connected to the p-type silicon 40 through the insulating layer 44 to form one electrode, and the inner conductive layer 48 is electrically connected to the n-type silicon 42. Connect to become the other electrode. In the example of FIG. 1C, the conductive layers 46 in the plurality of spherical silicons 34 are connected to each other, and the conductive layers 48 are also connected to each other, so that the plurality of photoelectric conversion elements by the plurality of spherical silicons 34 are parallel to each other. Connected.

  Thus, in the spherical silicon solar cell 12, the plurality of recesses 36 have a function of concentrating the sunlight incident on the inner surface of the spherical silicon 34 on the spherical silicon 34. So thick protective glass is not required. Since the frame 30 only needs to support the aggregate of the plurality of recesses 36, the frame 30 can be formed of a thin aluminum plate or the like, and can be a lightweight and flexible solar cell.

  The orthogonal power conversion device 14 is an independent device having a cubic housing. The casing is provided with input terminals 50 and 52 for receiving DC power and output terminals 54 and 56 for outputting sinusoidal AC power. Although not shown in FIG. 1, there is also provided a selector switch that can switch the frequency of the sine wave AC power between 50 Hz and 60 Hz. Other terminals are not particularly required, and the circuit inside the casing operates based only on DC power input from the input terminals 50 and 52.

  The orthogonal power conversion device 14 includes a circuit that performs orthogonal power conversion therein. A circuit that performs orthogonal power conversion includes a booster circuit 58, a sine wave inverter 60, a low-pass filter 62, a PWM circuit 64, a sine wave reference signal generator 66, and a triangular wave signal generator 68.

  The booster circuit 58 is a circuit that boosts the voltage value of the DC power input to the input terminals 50 and 52 to a DC voltage of 100V. As the booster circuit 58, a reactor type circuit that includes a switching element, a reactor, and a capacitive element, and releases electromagnetic energy temporarily stored in the reactor to the capacitive element for boosting can be used. The step-up ratio can be performed by setting the ratio of the time for accumulating and releasing the electromagnetic energy according to the duty ratio of on / off of the switching element.

  Instead, the input DC power is once converted into AC power having the voltage value, and the input-side AC power is converted using the winding ratio between the primary winding and the secondary winding of the transformer. Even if a transformer type circuit is used that boosts the voltage value and converts the AC voltage to AC power on the output side, converts the boosted AC power to DC power again, and converts the boosted AC power to DC power having the boosted voltage value. Good.

  The sine wave inverter 60 is an inverter circuit that converts DC power having a voltage value of 100V into 50Hz or 60Hz sine wave AC power having an effective AC voltage value of 100V. The sine wave inverter 60 includes a first arm circuit in which two switching transistors 70 and 72 that are two N-channel silicon carbide MOSFETs are connected in series, and two switching transistors 74 and 76 that are two N-channel silicon carbide MOSFETs. A second arm circuit connected in series is connected in parallel to each other. A first output line is drawn from a connection point where the switching transistors 70 and 72 are connected to each other in the first arm circuit, and a second output line is connected from a connection point where the switching transistors 74 and 76 are connected to each other in the second arm circuit. Is pulled out. The first output line and the second output line are respectively connected to the output terminals 54 and 56 through a low-pass filter 62 that passes only a low frequency signal of 50 Hz or 60 Hz.

  The PWM circuit 64 compares the sine wave reference signal output from the 50 Hz or 60 Hz sine wave reference signal generator 66 with the triangular wave signal output from the triangular wave signal generator 68 to compare the four switching transistors of the sine wave inverter 60. This circuit generates control signals for 70, 72, 74, and 76. The PWM circuit 64 sets the period in which the sine wave reference signal has a voltage value larger than that of the triangular wave signal to H level and the PWM of rectangular wave having the period in which the sine wave reference signal has a voltage value smaller than that of the triangular wave signal (L level). (Pulse width Modulation) signal is generated. Then, four control signals are generated based on the PWM signal, and these are used as control signals supplied to the four switching transistors 70, 72, 74, 76 of the sine wave inverter 60, respectively.

  In this way, the sine wave reference signal is converted into four PWM control signals and supplied to the four switching transistors 70, 72, 74, and 76, respectively. A digital waveform formed by a set of rectangular waves is output. A digital waveform formed by a set of a plurality of rectangular waves is a simulated sine wave waveform in which one cycle of the smoothed waveform is a sine wave of 50 Hz or 60 Hz. In this way, a sinusoidal AC signal having an effective voltage value of 100 V and a period of 50 Hz or 60 Hz is output to the output terminals 54 and 56.

  As this orthogonal power converter 14, the thing which remodeled the sine wave inverter 300W (brand name) of the model SXCD-300 of Daido Kogyo Co., Ltd. can be used. Model SXCD-300 sine wave inverter 300W (trade name) has a cubic outer shape with vertical and horizontal dimensions of 147 mm x 182 mm and a height of 110 mm, weighs 1.30 kg, and uses DC power of 12V. A sinusoidal AC power having a voltage value of 100 V and a period of 50 Hz or 60 Hz can be output. The rated output is 300 W, and with this one unit, DC power output from a parallel connection of up to five spherical silicon solar cells 12 is a sinusoidal AC having an effective voltage value of 100 V and a period of 50 Hz or 60 Hz. It can be converted into electric power and output.

  However, in the sine wave inverter 300W (product name) of the model SXCD-300, the four switching transistors 70, 72, 74, and 76 constituting the sine wave inverter 60 are all N channel silicon MOSFETs, and N channel silicon carbide. It is not a MOSFET. Accordingly, a modified version in which the four N-channel silicon MOSFETs are replaced with four N-channel silicon carbide MOSFETs and the other configurations are left as they is is used as the orthogonal power conversion device 14 shown in FIG. Note that, if the silicon carbide MOSFET is a SiC MOSFET, it is confusing with CMOS, so silicon carbide is used instead of SiC.

  Specifically, the four N-channel silicon MOSFETs constituting the sine wave inverter 60 of the sine wave inverter 300W (trade name) of the model SXCD-300 are Fairchild's model FQPF16N25C. Replaced by ROHM model SCT2120AF N-channel silicon carbide MOSFET with threshold voltage.

  FIG. 3 is a comparative diagram summarizing representative characteristics of a Fairchild Model FQPF16N25C N-channel silicon MOSFET and a Rohm Model SCT2120AF N-channel silicon carbide MOSFET. The N channel silicon carbide MOSFET of the type SCT2120AF has two distinct differences from the N channel silicon MOSFET of the type FQPF16N25C. One is that the N channel silicon MOSFET has a withstand voltage of 250V, whereas the N channel silicon carbide MOSFET has a high withstand voltage of 650V at the maximum rated drain-source voltage. In the system 10 of FIG. 1, since the effective voltage value is 100V, this difference in characteristics is irrelevant. The other is the drain-source on-resistance, which is 220 mΩ to 270 mΩ for the N-channel silicon MOSFET, whereas it is considerably low, 120 mΩ to 156 mΩ for the N-channel silicon carbide MOSFET. This is because, as described in Patent Document 3, the silicon carbide MOSFET has a lower on-resistance per unit area than the silicon MOSFET because of its structure. This low drain-source on-resistance is expected to improve the conversion efficiency from DC power to AC power in the sine wave inverter 60.

  Hereinafter, a modified version in which the four switching transistors 70, 72, 74, and 76 of the sine wave inverter 300W (product name) of the model SXCD-300 are replaced with silicon carbide MOSFETs is referred to as an orthogonal power converter 14, and the model SXCD-300 The one before the remodeling in which the four switching transistors are silicon MOSFETs with the sine wave inverter 300W (trade name) remains as the orthogonal power conversion device 15.

FIG. 4 is a diagram showing experimental results comparing the power conversion efficiencies for each of the single unit of the orthogonal power conversion device 14 and the single unit of the orthogonal power conversion device 15. In this experiment, an independent constant voltage DC power source was connected to the input terminals 50 and 52 without connecting the spherical silicon solar cell 12. A variable resistor is connected to the load 18, the output voltage of the constant voltage DC power supply is fixed at 11.98 V, and the load W so that the value W _{OUT of} the output side power measuring device 22 becomes a predetermined stepped output power value. The variable resistance value of 18 was changed, the value W _IN of the input side power measuring device 20 at that time was determined, and the power conversion efficiency was determined as (W _OUT / W _IN ) × 100%.

In the experiment, model PAT60-133T manufactured by Kikusui Electronics Co., Ltd. was used as a constant voltage DC power source. A portable single-phase wattmeter of model 2041 manufactured by Yokogawa Electric Corporation was used as the output-side power measuring device 22, and the reading value was set as the output-side power value W _OUT . As the input-side power measuring device 20, the input-side power value W _IN was obtained by calculation using a shunt resistor and two voltmeters instead of a single wattmeter. That is, a DC voltmeter of Sanwa Denki Keiki Co., Ltd. model PC5000a was connected between the input terminals 50 and 52, and the read value was used as the input voltage value V _IN . Further, a shunt resistor whose resistance value is accurately known in advance is connected between the input terminal 50 and the above-mentioned model PAT60-133T plus side terminal of Kikusui Electronics Co., Ltd. It was read with a digital multimeter, and the read value was divided by the resistance value of the shunt resistor to obtain an input current value I _IN . And the input side electric power was calculated _| required from the formula of _WIN = _VIN * _IIN . The input terminal 52 was connected to the negative terminal of a model PAT60-133T manufactured by Kikusui Electronics Corporation.

The output power on the horizontal axis in FIG. 4 is the value of W _OUT acquired as described above. The power conversion efficiency on the vertical axis is a value expressed as a percentage by dividing W _OUT by W _IN obtained as described above. A solid line is a characteristic line of the orthogonal power conversion device 14, and a broken line is a characteristic line of the orthogonal power conversion device 15.

  As shown in FIG. 4, the power conversion efficiency of the orthogonal power conversion device 14 using the silicon carbide MOSFET is the power conversion of the orthogonal power conversion device 15 using the silicon MOSFET in a wide range of output power of about 50 W to about 160 W. About 1-2% improvement over efficiency.

  FIG. 5 shows a system in which four spherical silicon solar cells 12 are connected in parallel to the input terminals 50 and 52 and the orthogonal power converter 14 and the orthogonal power converter 15 are used. It is a figure which shows the experimental result which compared the power conversion efficiency of 10 whole. The horizontal axis and the vertical axis in FIG. 5 are the same as those in FIG. 4, but the measurement was performed in the range of about 30 W to about 120 W of output power, and the number of measurement points in the range was increased. In addition, when the input power source of the orthogonal power converters 14 and 15 is changed from the constant voltage power source to the spherical silicon solar cell 12, the measured values vary to some extent. This is probably because the spherical silicon solar cell 12 is not a constant voltage source. Therefore, FIG. 5 also shows the variation range in the measurement. A solid line is a characteristic line when the orthogonal power converter 14 is used, and a broken line is a characteristic line when the orthogonal power converter 15 is used.

  As shown in FIG. 5, the power conversion efficiency of the orthogonal power conversion device 14 using the silicon carbide MOSFET is higher than the power conversion efficiency of the orthogonal power conversion device 15 using the silicon MOSFET in a wide range of output power of about 30 W to about 120 W. However, even if the variation is taken into consideration, it is improved by about 1 to 3%.

  From FIG. 4 and FIG. 5, the orthogonal power conversion device 14 is compared with a case where the other configurations are the same and only four N-channel silicon carbide MOSFETs are replaced with four N-channel silicon MOSFETs having equivalent gate threshold voltages. It can be seen that the power conversion efficiency is improved over a fairly wide range of output power, and the power conversion efficiency has an operating range that improves by 2% or more.

  Thus, compared with the photovoltaic power generation system using the orthogonal power converter using the sine wave inverter incorporating the conventional silicon MOSFET, the orthogonal power converter using the sine wave inverter incorporating the silicon carbide MOSFET can be reduced in weight. It is possible to improve the power conversion efficiency of a photovoltaic power generation system using a spherical silicon solar cell having flexibility.

  10 (portable solar power supply) system, 12 spherical silicon type solar cell, 14, 15 orthogonal power converter, 16 power line, 18 load, 20 input side power measuring device, 22 output side power measuring device, 30 frame, 32 solar cell block, 34 spherical silicon, 36 recess, 40 p-type silicon, 42 n-type silicon, 44 insulating layer, 46, 48 conductive layer, 50, 52 input terminal, 54, 56 output terminal, 58 booster circuit, 60 sine Wave inverter, 62 low-pass filter, 64 PWM circuit, 66 sine wave reference signal generator, 68 triangular wave signal generator, 70, 72, 74, 76 switching transistor.

Claims (2)

A spherical silicon solar cell that outputs DC power having a maximum rated voltage of 16 V, a maximum output of 50 W, and a total mass of 3 kg including the support frame ;
The independent device from the solar cell, the booster circuit for boosting an output voltage of said solar cell into a DC voltage of 100 V, and two N-channel silicon carbide MOSFET is connected arm circuits are two parallel connections in series An orthogonal power converter including an inverter circuit that converts the DC power of 100 V into a sinusoidal AC power of 100 V 50 Hz or 100 V 60 Hz, a rated output of 300 W, and an overall mass of 1.3 kg ;
A power line that electrically connects the solar cell and the orthogonal power converter, and
An installation tool for installing the solar cell and the orthogonal power conversion device electrically connected to each other at an installation destination;
A portable solar power feeding system characterized by comprising a secondary battery . The portable solar power supply system according to claim 1,
Four solar cells are connected in parallel, the maximum rated voltage is 16V, the maximum output is 200W DC power, and the total mass including the support frame is 12kg,
A portable solar power feeding system, wherein one of the orthogonal power converters with a rated output of 300 W is connected by the power line .

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