JP6325802B2 - Backflow prevention circuit and junction box for photovoltaic power generation - Google Patents

Backflow prevention circuit and junction box for photovoltaic power generation Download PDF

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JP6325802B2
JP6325802B2 JP2013249384A JP2013249384A JP6325802B2 JP 6325802 B2 JP6325802 B2 JP 6325802B2 JP 2013249384 A JP2013249384 A JP 2013249384A JP 2013249384 A JP2013249384 A JP 2013249384A JP 6325802 B2 JP6325802 B2 JP 6325802B2
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彰訓 加藤
彰訓 加藤
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河村電器産業株式会社
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description

本発明は、直流電路において電流の逆流を防止するための逆流防止回路、及び太陽光発電用接続箱に関する。   The present invention relates to a backflow prevention circuit for preventing backflow of current in a DC circuit, and a connection box for photovoltaic power generation.

太陽光発電では、複数の太陽電池ストリングから送られて来る直流電力が統合されてインバータに送られて交流電力が生成される。その際、電路の統合に接続箱が使用されている。
この太陽光発電用接続箱は、複数の太陽電池ストリングが並列接続されるため、日陰になって太陽光が当たらない太陽電池パネルと十分な太陽光が当たっている太陽電池パネルとが混在した状態で接続される状況が発生する。そのため、発電電圧が小さい太陽電池ストリングと発電電圧が大きな太陽電池ストリングとが単純に並列接続されると、高い発電電圧の太陽電池ストリングから低い発電電圧の太陽電池ストリングへ電流が流れ込む逆流が発生して太陽電池パネルが故障してしまう。
これを防止するために、接続箱において個々の太陽電池ストリングに逆流防止ダイオードを介在させ、このダイオードを介して並列接続した(例えば、特許文献1参照)。
In solar power generation, DC power sent from a plurality of solar cell strings is integrated and sent to an inverter to generate AC power. At that time, a junction box is used for integration of electric circuits.
This connection box for photovoltaic power generation is a mixture of solar panels that are shaded and not exposed to sunlight, and solar panels that are exposed to sufficient sunlight, because multiple solar cell strings are connected in parallel. The situation where it is connected with occurs. Therefore, when a solar cell string with a small generated voltage and a solar cell string with a large generated voltage are simply connected in parallel, a backflow occurs in which a current flows from a high generated voltage solar cell string to a low generated voltage solar cell string. The solar panel will break down.
In order to prevent this, a backflow prevention diode is interposed in each solar cell string in the junction box and connected in parallel via this diode (see, for example, Patent Document 1).

特開2011−187807号公報JP 2011-187807 A

しかしながら、太陽電池が発電しているときは常に逆流防止ダイオードに電流が流れ続けることになり、そのダイオードの電圧降下によるエネルギー損失が常時発生していた。これが太陽光発電システムの発電効率低下の一因となっていた。   However, when the solar cell is generating power, current always flows through the backflow prevention diode, and energy loss due to the voltage drop of the diode always occurs. This contributed to a decrease in power generation efficiency of the solar power generation system.

そこで、本発明はこのような問題点に鑑み、ダイオードより低損失な素子を使用して逆流防止回路を構成することで、太陽光発電の発電効率を上げることを可能とした逆流防止回路及びこの逆流防止回路を備えた太陽光発電用接続箱を提供することを目的としている。   Therefore, in view of such a problem, the present invention is a backflow prevention circuit that can increase the power generation efficiency of photovoltaic power generation by configuring a backflow prevention circuit using an element having a lower loss than a diode, and the backflow prevention circuit. It aims at providing the junction box for photovoltaic power generation provided with the backflow prevention circuit.

上記課題を解決する為に、請求項1の発明に係る逆流防止回路は、直流電源から電流を送出する正極側電路と負極側電路から成る一対の電路のうち、負極側電路の電路をオン/オフ操作するFET素子と、FET素子を制御する制御ICと、正極側電路から制御ICに動作電源を供給する電源回路とを有し、制御ICは、FET素子の3電極に対応する端子を有して、FET素子のソース極、ドレイン極の電圧を監視して所定の関係を満たせばゲート極に動作電圧を出力してFET素子をオンさせ、満たしていなければオフさせる機能を具備し、電源回路は、正極側電路と負極側電路の間の電位差が所定値を下回ると、制御ICへの電源供給を停止し、FET素子がオフすることを特徴とする。

この構成によれば、電路間の電位差が所定値を下回ると電源回路から制御ICへの電源の供給が停止するため、FET素子がオフして電路は遮断状態となる。よって、電路電流に逆流が発生するような状況では電路が遮断されて逆流の発生を防止できる。
そして、FET素子のオン動作状態の順方向電圧降下は、ダイオードの順方向電圧降下に比べて小さいため、逆流防止にダイオードを使用した場合に比べて損失を改善することができるし、電路に電流が流れないような状況では制御ICにも電源が供給されないため制御ICにおいて消費される電力も僅かで済む。
In order to solve the above-described problem, the backflow prevention circuit according to the first aspect of the present invention turns on / off the negative-side electric circuit among a pair of positive-side electric circuit and negative-side electric circuit that sends current from a DC power supply. An FET element that is turned off, a control IC that controls the FET element, and a power supply circuit that supplies operation power to the control IC from the positive-side electric circuit, and the control IC has terminals corresponding to the three electrodes of the FET element. Then, the voltage of the source electrode and the drain electrode of the FET element is monitored, and if the predetermined relationship is satisfied, the operation voltage is output to the gate electrode to turn on the FET element, and if not, the function to turn off is provided. The circuit is characterized in that when the potential difference between the positive electrode circuit and the negative electrode circuit falls below a predetermined value, the power supply to the control IC is stopped and the FET element is turned off.
.
According to this configuration, when the potential difference between the electric circuits falls below a predetermined value, the supply of power from the power supply circuit to the control IC is stopped, so that the FET element is turned off and the electric circuit is cut off. Therefore, in a situation where a backflow occurs in the circuit current, the circuit is interrupted and the backflow can be prevented.
Since the forward voltage drop in the ON operation state of the FET element is smaller than the forward voltage drop of the diode, the loss can be improved compared to the case where the diode is used for preventing the reverse current, and the current in the electric circuit is reduced. In such a situation that power does not flow, power is not supplied to the control IC, so that little power is consumed in the control IC.

請求項2の発明は、太陽電池ストリングを並列接続して1回路にまとめて直流電力を出力する太陽光発電用接続箱であって、個々の太陽電池ストリングの電路に請求項1記載の逆流防止回路を接続したことを特徴とする。
この構成によれば、逆流防止にオン抵抗の小さいFET素子を使用することで、電路の電圧降下を小さくでき発電効率を挙げることができる。
The invention of claim 2 is a connection box for photovoltaic power generation in which solar cell strings are connected in parallel to output DC power in one circuit, and the backflow prevention according to claim 1 is provided in the electric circuit of each solar cell string. The circuit is connected.
According to this configuration, by using the FET element having a small on-resistance for preventing the backflow, the voltage drop of the electric circuit can be reduced and the power generation efficiency can be increased.

本発明に係る逆流防止回路によれば、電路電流に逆流が発生するような状況ではFET素子がオフするため、電路が遮断されて逆流の発生を防止できる。そしてFET素子のオン動作状態の順方向電圧降下は、ダイオードの順方向電圧降下に比べて小さいため、逆流防止にダイオードを使用した場合に比べて損失を改善することができる。
また、太陽光発電用接続箱の逆流防止手段にこの逆流防止回路を使用することで、電路の電圧降下を小さくでき、発電効率を挙げることができる。
According to the backflow prevention circuit according to the present invention, since the FET element is turned off in a situation where backflow occurs in the circuit current, the circuit is interrupted to prevent backflow. Since the forward voltage drop in the ON operation state of the FET element is smaller than the forward voltage drop of the diode, the loss can be improved as compared with the case where the diode is used for preventing the backflow.
Moreover, by using this backflow prevention circuit for the backflow prevention means of the connection box for solar power generation, the voltage drop of the electric circuit can be reduced and the power generation efficiency can be increased.

本発明に係る太陽光発電用接続箱の一例を示す回路図である。It is a circuit diagram which shows an example of the connection box for solar power generation concerning this invention. 図1の逆流防止回路の動作説明図であり、(a)は発電電力がパワーコンディショナに送出されている正常な状態、(b)は発電電圧が小さく他の太陽電池ストリングの発電電流が逆流しようとしている状態を示している。FIG. 2 is an operation explanatory diagram of the backflow prevention circuit of FIG. 1, (a) is a normal state in which generated power is sent to the power conditioner, (b) is a low generated voltage, and the generated currents of other solar cell strings are backflowed. Indicates the state that is being attempted.

以下、本発明を具体化した実施の形態を、図面を参照して詳細に説明する。図1は本発明に係る太陽光発電用接続箱の一例を示す回路図であり、1は複数の太陽電池パネル1aを直列接続した太陽電池ストリング、2は接続箱、3は直流を交流に変換するパワーコンディショナ(PCS)である。   DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments embodying the present invention will be described below in detail with reference to the drawings. FIG. 1 is a circuit diagram showing an example of a connection box for photovoltaic power generation according to the present invention, wherein 1 is a solar cell string in which a plurality of solar cell panels 1a are connected in series, 2 is a connection box, and 3 is a direct current to an alternating current. It is a power conditioner (PCS).

接続箱2には、個々の太陽電池ストリング1に接続された正極側電路4a及び負極側電路4bの2本のケーブルで構成される電路4が複数導入され、それらの電路4を接続/遮断する開閉手段5、太陽電池ストリング1毎に電流の逆流を防止するための複数の逆流防止回路6、各電路4を並列接続してパワーコンディショナ3に出力する統合電路7が設けられている。尚、8は避雷回路である。   In the connection box 2, a plurality of electric circuits 4 constituted by two cables of the positive electrode side electric circuit 4 a and the negative electrode side electric circuit 4 b connected to the individual solar cell strings 1 are introduced, and these electric circuits 4 are connected / cut off. An opening / closing means 5, a plurality of backflow prevention circuits 6 for preventing backflow of current for each solar cell string 1, and an integrated circuit 7 for connecting each circuit 4 in parallel and outputting them to the power conditioner 3 are provided. Reference numeral 8 denotes a lightning protection circuit.

逆流防止回路6は、負極側電路4bに直列に接続したパワーMOSFETから成る第1FET素子M1と、この第1FET素子M1を制御する制御IC9と、制御IC9に電源を供給する電源回路10とで構成されている。
図2は逆流防止回路6の動作説明図であり、(a)は発電電力がパワーコンディショナ3に送出されている正常な状態、(b)は発電電圧が小さく他の太陽電池ストリング1の発電電流が逆流しようとしている状態を示し、この図2を参照して以下説明する。尚、開閉手段5は通常閉路状態にある。
The backflow prevention circuit 6 includes a first FET element M1 composed of a power MOSFET connected in series to the negative electrode side circuit 4b, a control IC 9 that controls the first FET element M1, and a power supply circuit 10 that supplies power to the control IC 9. Has been.
2A and 2B are explanatory diagrams of the operation of the backflow prevention circuit 6. FIG. 2A is a normal state in which generated power is sent to the power conditioner 3, and FIG. 2B is a power generation voltage of another solar cell string 1 with a small generated voltage. The state where the current is going to flow backward is shown, and will be described below with reference to FIG. The opening / closing means 5 is normally closed.

第1FET素子M1は、ドレイン極Dが負極側電路4bの太陽電池ストリング1側に接続され、ソース極Sがパワーコンディショナ3側に接続されている。   As for the 1st FET element M1, the drain pole D is connected to the solar cell string 1 side of the negative electrode side electric circuit 4b, and the source pole S is connected to the power conditioner 3 side.

制御IC9は、第1FET素子M1の3電極に対応する端子を有し、ソース極S、ドレイン極Dの電圧を監視して所定の関係を満たしていればゲート極Gに動作電圧を出力してオン動作させ、満たしていなければ出力せずオフさせる。   The control IC 9 has terminals corresponding to the three electrodes of the first FET element M1, monitors the voltages of the source electrode S and the drain electrode D, and outputs an operating voltage to the gate electrode G if the predetermined relationship is satisfied. Turns on and turns off without output if not satisfied.

電源回路10は、MOSFETから成る第2FET素子M2と、ツェナーダイオードZDと、電流制限のための抵抗素子R1,R2とを有している。第2FET素子M2が正極側電路4aと制御IC9の間に配置され、第2FET素子M2を介して制御IC9に電源が供給される。
この第2FET素子M2は、ツェナーダイオードZDのツェナー電圧により設定され一定電圧でオン/オフが制御され、電路4の電圧(正極側電路4aと負極側電路4bの間の電位差)が所定の電圧以上となるとオン動作して第1FET素子M1にゲート電圧が供給される。逆に所定の電圧に満たなければ、電源回路10はオフして制御IC9がオフする。この結果、ゲート電圧が供給されず第1FET素子M1がオフする。
The power supply circuit 10 includes a second FET element M2 made of a MOSFET, a Zener diode ZD, and resistance elements R1 and R2 for current limiting. The second FET element M2 is disposed between the positive electrode side circuit 4a and the control IC 9, and power is supplied to the control IC 9 via the second FET element M2.
The second FET element M2 is set by the Zener voltage of the Zener diode ZD, and is controlled to be turned on / off by a constant voltage. The voltage of the electric circuit 4 (potential difference between the positive electrode circuit 4a and the negative electrode circuit 4b) is equal to or higher than a predetermined voltage. Then, the gate voltage is supplied to the first FET element M1 by turning on. Conversely, if the voltage does not reach the predetermined voltage, the power supply circuit 10 is turned off and the control IC 9 is turned off. As a result, the gate voltage is not supplied and the first FET element M1 is turned off.

具体的に、ソース極Sの電圧がドレイン極Dの電圧より高ければゲート極Gに動作電圧を出力し、ソース極S電圧がドレイン極D電圧より低ければゲート極Gに動作電圧を出力しない。従って、電路4に順方向電流が流れている間はオン状態にあるが、太陽電池ストリング1が発電していても逆方向電流が流れようとすると、第1FET素子M1はオフして電流の流れを阻止する。図2(b)はこの状態を示している。
こうして、ソース−ドレイン間電圧の状態からゲート電圧が制御されるため、太陽電池ストリング1の発電状態に関わらず、確実に逆流を防止できる。
Specifically, if the source electrode S voltage is higher than the drain electrode D voltage, the operating voltage is output to the gate electrode G, and if the source electrode S voltage is lower than the drain electrode D voltage, the operating voltage is not output to the gate electrode G. Therefore, while the forward current is flowing in the electric circuit 4, it is in the ON state, but even if the solar cell string 1 is generating power, if the backward current flows, the first FET element M1 is turned off and the current flows. To prevent. FIG. 2B shows this state.
Thus, since the gate voltage is controlled from the state of the source-drain voltage, backflow can be reliably prevented regardless of the power generation state of the solar cell string 1.

また、夜間等発電していない状態では第2FET素子M2がオフするため、制御IC9に電源が供給されない。従って、発電していない時は制御IC9に待機電力が発生せず、電力は全く消費されない。   In addition, since the second FET element M2 is turned off in a state where no power generation is performed such as at night, power is not supplied to the control IC 9. Therefore, when no power is generated, no standby power is generated in the control IC 9, and no power is consumed.

ここで、FETとダイオードの損失の差について説明する。電路4の状態が直流400ボルト,10アンペアが通電されているとした場合、例えばダイオードの損失は12ワットであるのに対してFETでは1.6ワットであり、7分の1以下に削減される。尚、この値は、例えば品番DG20AA120のダイオードデータ、SiCパワーMOSFET(SCT2160KE)のデータを使用したものである。   Here, the difference in loss between the FET and the diode will be described. If the condition of the electric circuit 4 is 400 VDC and 10 amperes are energized, for example, the diode loss is 12 watts while the FET is 1.6 watts, which is reduced to 1/7 or less. The This value uses, for example, diode data of product number DG20AA120 and data of SiC power MOSFET (SCT2160KE).

このように、正極側電路4aと負極側電路4bとの間の電位差が所定値を下回ると電源回路10から制御IC9への電源の供給が停止するため、第1FET素子M1がオフして電路4は遮断状態となる。よって、電路電流に逆流が発生するような状況では電路4が遮断されて逆流の発生を防止できる。
そして、第1FET素子M1のオン動作状態の順方向電圧降下は、ダイオードの順方向電圧降下に比べて小さいため、ダイオードを使用した場合に比べて損失を改善することができるし、電路4に電流が流れないような状況では制御IC9にも電源が供給されないため制御IC9において消費される電力も僅かで済む。よって、接続箱2内の逆流防止回路にオン抵抗の小さいFET素子を使用することで、電路の電圧降下を小さくでき発電効率を挙げることができる。
In this way, when the potential difference between the positive electrode side circuit 4a and the negative electrode side circuit 4b falls below a predetermined value, the supply of power from the power supply circuit 10 to the control IC 9 is stopped, so the first FET element M1 is turned off and the electric circuit 4 Is cut off. Therefore, in a situation where a reverse flow occurs in the electric circuit current, the electric circuit 4 is blocked and the occurrence of the reverse flow can be prevented.
Since the forward voltage drop in the on-operation state of the first FET element M1 is smaller than the forward voltage drop of the diode, the loss can be improved compared to the case where the diode is used, and the current in the electric circuit 4 is reduced. Since no power is supplied to the control IC 9 in a situation where no current flows, the power consumed by the control IC 9 is very small. Therefore, by using a FET element having a low on-resistance for the backflow prevention circuit in the junction box 2, the voltage drop in the electric circuit can be reduced and the power generation efficiency can be increased.

尚、第1FET素子M1は、SiCパワーMOSFETに限定するものではなく、シリコン系、炭化シリコン系、窒化ガリウム系の何れのパワーMOSFETであっても良く、ダイオードに比べてオン抵抗を下げることができるため、発電効率の向上に有効である。   The first FET element M1 is not limited to the SiC power MOSFET, and may be any silicon, silicon carbide, or gallium nitride power MOSFET, and can lower the on-resistance as compared with the diode. Therefore, it is effective for improving the power generation efficiency.

上記実施形態は、太陽光発電用接続箱で使用する場合を説明したが、これに限るものではなく、本発明の逆流防止回路は例えば蓄電池などの直流配線用直流開閉器においても好適である。   Although the said embodiment demonstrated the case where it uses with the connection box for photovoltaic power generation, it is not restricted to this, For example, the backflow prevention circuit of this invention is suitable also in DC switch for DC wiring, such as a storage battery.

1・・太陽電池ストリング(直流電源)、2・・接続箱(太陽光発電用接続箱)、3・・パワーコンディショナ、4・・電路、4a・・正極側電路、4b・・負極側電路、6・・逆流防止回路、9・・制御IC、10・・電源回路、M1・・第1FET素子(FET素子)。   1 .... Solar cell string (DC power supply) 2 .... Junction box (solar power generation connection box) 3 .... Power conditioner 4 .... Electric circuit 4a ... Positive electrode side electric circuit 4b ... Negative electrode side electric circuit , 6 .. Backflow prevention circuit, 9... Control IC, 10... Power supply circuit, M1.

Claims (2)

直流電源から電流を送出する正極側電路と負極側電路から成る一対の電路のうち、負極側電路の電路をオン/オフ操作するFET素子と、前記FET素子を制御する制御ICと、前記正極側電路から前記制御ICに動作電源を供給する電源回路とを有し、
前記制御ICは、前記FET素子の3電極に対応する端子を有して、前記FET素子のソース極、ドレイン極の電圧を監視して所定の関係を満たせばゲート極に動作電圧を出力して前記FET素子をオンさせ、満たしていなければオフさせる機能を具備し、
前記電源回路は、前記正極側電路と前記負極側電路の間の電位差が所定値を下回ると、前記制御ICへの電源供給を停止し、前記FET素子がオフすることを特徴とする逆流防止回路。
Of a pair of electric circuits comprising a positive electrode circuit and a negative electrode circuit for sending current from a DC power supply, an FET element for turning on / off the electric circuit of the negative electrode circuit, a control IC for controlling the FET element, and the positive electrode side A power supply circuit for supplying operating power from an electric circuit to the control IC,
The control IC has terminals corresponding to the three electrodes of the FET element, monitors the voltage of the source electrode and the drain electrode of the FET element, and outputs an operating voltage to the gate electrode if a predetermined relationship is satisfied. The FET element is turned on, and if not satisfied, the FET element is turned off,
The power supply circuit stops a power supply to the control IC and turns off the FET element when a potential difference between the positive electrode circuit and the negative electrode circuit falls below a predetermined value. .
太陽電池ストリングを並列接続して1回路にまとめて直流電力を出力する太陽光発電用接続箱であって、
個々の太陽電池ストリングの電路に請求項1記載の逆流防止回路を接続したことを特徴とする太陽光発電用接続箱。
It is a connection box for photovoltaic power generation in which solar battery strings are connected in parallel to output DC power in one circuit,
A connection box for photovoltaic power generation, wherein the backflow prevention circuit according to claim 1 is connected to an electric path of each solar cell string.
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