JP6111671B2 - Power converter using drive signal isolation circuit - Google Patents
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Description
本発明は、インバータなどの電力変換装置に適用する電力用半導体スイッチ素子を駆動する信号の絶縁回路を適用した電力変換装置に関する。
The present invention relates to a power conversion apparatus using the insulating circuits of the signal for driving the semiconductor switching element for power to be applied to the power converter such as an inverter.
図１１に電力変換回路の代表回路である直流から交流に電力変換する２レベルインバータの主回路構成図を示す。１は直流電源，２は負荷としての交流電動機，３は電力用半導体素子で構成するインバータ回路で，直流電源１の直流電圧Ｅｄを交流電圧に変換し、電圧と周波数の可変出力が可能である。但し一般には直流電源１は，図示していない交流電源とダイオード整流器などを介して，大容量のコンデンサで構成される。また前記直流電圧Ｅｄが前記コンデンサ単体の電圧定格よりも高いときはコンデンサを複数個直列に接続する。 FIG. 11 shows a main circuit configuration diagram of a two-level inverter that performs power conversion from direct current to alternating current, which is a representative circuit of the power conversion circuit. Reference numeral 1 is a DC power source, 2 is an AC motor as a load, and 3 is an inverter circuit composed of a semiconductor element for power. The DC voltage Ed of the DC power source 1 is converted into an AC voltage, and variable output of voltage and frequency is possible. . However, in general, the DC power source 1 is composed of a large-capacity capacitor via an AC power source (not shown) and a diode rectifier. When the DC voltage Ed is higher than the voltage rating of the capacitor alone, a plurality of capacitors are connected in series.
ここに示すインバータ回路３は３相出力の回路であり、Ｕ相用のアーム直列回路３Ｕ、Ｖ相用のアーム直列回路３Ｖ、Ｗ相用のアーム直列回路３Ｗを直流電源１と並列接続して構成される。各アーム直列回路の直列接続点は交流出力となり、負荷としての交流電動機２に接続される。アーム各々は、Ｕ相用のアーム直列回路３Ｕの上アームの例に示すように、スイッチ素子であるＩＧＢＴ４，ＩＧＢＴ４と逆並列に接続されるダイオード５，ゲート駆動回路６で構成され、これらが６回路で３相インバータ回路となる。７は電力変換装置の制御回路で，制御回路７で各ＩＧＢＴのオンオフ指令信号（ゲート駆動信号）が生成される。ＩＧＢＴ４を駆動するためのゲート駆動回路６では，制御回路７からのオンオフ信号を絶縁してＩＧＢＴ４のゲートに供給する。通常制御回路が置かれている基準電位側と，ＩＧＢＴ及びそのゲート駆動回路間には電位差があるため，両者間で信号伝送を行う場合は絶縁器が必要となる。 The inverter circuit 3 shown here is a circuit with a three-phase output. The U-phase arm series circuit 3U, the V-phase arm series circuit 3V, and the W-phase arm series circuit 3W are connected in parallel with the DC power source 1. Composed. A series connection point of each arm series circuit is an AC output and is connected to an AC motor 2 as a load. As shown in the example of the upper arm of the U-phase arm series circuit 3U, each arm is composed of a diode 5 and a gate drive circuit 6 connected in reverse parallel to the IGBT 4 and IGBT 4 as switch elements. The circuit becomes a three-phase inverter circuit. Reference numeral 7 denotes a control circuit of the power converter, and the control circuit 7 generates an on / off command signal (gate drive signal) for each IGBT. In the gate drive circuit 6 for driving the IGBT 4, the on / off signal from the control circuit 7 is insulated and supplied to the gate of the IGBT 4. Since there is a potential difference between the reference potential side where the control circuit is normally placed and the IGBT and its gate drive circuit, an insulator is required when signal transmission is performed between the two.
上記システムにおいて従来から適用されている絶縁器を用いた回路例として，図１２に示すフォトカプラ９を用いた回路構成，図１３に示すパルストランス１０，１１を用いた回路構成，図１４に示す光ファイバケーブル１２を用いた回路構成がある。 As a circuit example using an isolator conventionally applied in the above system, a circuit configuration using a photocoupler 9 shown in FIG. 12, a circuit configuration using pulse transformers 10 and 11 shown in FIG. 13, and a circuit configuration shown in FIG. There is a circuit configuration using the optical fiber cable 12.
図１２に示すフォトカプラを用いた回路は、制御回路７からのオンオフ信号をスイッチ回路１６を介してフォトカプラ回路９のフォトダイオードを駆動し、フォトカプラの２次回路であるフォトトランジスタを用いたゲート駆動回路でゲート駆動回路用電源ＧＰＳからＩＧＢＴＱ１のゲートにオン用順バイアス電圧とオフ用逆バイアス電圧を供給する。ここで使用されている抵抗Ｒｐは、制御電源Ｖｃからフォトダイードに流れる電流を所定値に制限するための制限抵抗である。また、抵抗Ｒｇはゲート抵抗と呼ばれ、オン信号の電圧立上り時間の調整や、オフ信号の立下り時間の調整の役割を担う。 The circuit using the photocoupler shown in FIG. 12 uses a phototransistor, which is a secondary circuit of the photocoupler, by driving the photodiode of the photocoupler circuit 9 through the switch circuit 16 with the on / off signal from the control circuit 7. The gate drive circuit supplies a forward bias voltage for turning on and a reverse bias voltage for turning off to the gate of the IGBT Q1 from the gate drive circuit power supply GPS. The resistor Rp used here is a limiting resistor for limiting the current flowing from the control power supply Vc to the photodiode to a predetermined value. The resistor Rg is called a gate resistor and plays a role of adjusting the voltage rise time of the ON signal and adjusting the fall time of the OFF signal.
図１３に示す絶縁トランス（パルストランスとも呼ぶ）を用いた回路は、二つの絶縁トランス１０、１１を用いた変調−復調回路の構成である。絶縁トランスを小型化するために、制御回路７からのオンオフ信号をスイッチ回路１７内で、位相の１８０度ずれた二つの高周波信号に変調して、絶縁トランス１０の１次巻線ｎ１と１１の１次巻線ｎ１を駆動し、各絶縁トランスの２次巻線ｎ２の電圧を整流ダイオードＲＤで整流して、復調する構成である。復調された信号はスイッチ回路１３でゲート駆動回路用電源ＧＰＳからＩＧＢＴＱ１のゲートにオン用順バイアス電圧とオフ用逆バイアス電圧を供給する。抵抗Ｒｇはゲート抵抗と呼ばれ、オン信号の電圧立上り時間の調整や、オフ信号の立下り時間の調整の役割を担う。 A circuit using an insulating transformer (also called a pulse transformer) shown in FIG. 13 has a configuration of a modulation / demodulation circuit using two insulating transformers 10 and 11. In order to reduce the size of the insulation transformer, the on / off signal from the control circuit 7 is modulated into two high-frequency signals that are 180 degrees out of phase in the switch circuit 17, and the primary windings n 1 and 11 of the insulation transformer 10 are modulated. The primary winding n1 is driven, and the voltage of the secondary winding n2 of each insulating transformer is rectified by a rectifier diode RD and demodulated. The demodulated signal is supplied from the gate drive circuit power supply GPS to the gate of the IGBT Q1 by the switch circuit 13 to the ON forward bias voltage and the OFF reverse bias voltage. The resistor Rg is called a gate resistor and plays a role of adjusting the voltage rise time of the on signal and adjusting the fall time of the off signal.
図１４に示す光ファイバケーブル１２を用いた回路は、制御回路７からのオンオフの電気信号を電気−光変換器（Ｅ／Ｏ）１４で光信号に変換し、光ファイバケーブル１２で半導体スイッチ素子駆動回路まで光伝送し、この光信号を光−電気変換器（Ｏ／Ｅ）１５で電気信号に変換する。この電気信号はスイッチ回路１３でゲート駆動回路用電源ＧＰＳからＩＧＢＴＱ１のゲートにオン用順バイアス電圧とオフ用逆バイアス電圧を供給する。抵抗Ｒｇはゲート抵抗と呼ばれ、オン信号の電圧立上り時間の調整や、オフ信号の立下り時間の調整の役割を担う。 The circuit using the optical fiber cable 12 shown in FIG. 14 converts an on / off electrical signal from the control circuit 7 into an optical signal by the electrical-optical converter (E / O) 14, and the optical fiber cable 12 converts the semiconductor switch element. The optical signal is transmitted to the drive circuit, and this optical signal is converted into an electrical signal by an optical-electrical converter (O / E) 15. This electrical signal is supplied from the gate drive circuit power supply GPS to the gate of the IGBT Q1 by the switch circuit 13 to the forward bias voltage for turning on and the reverse bias voltage for turning off. The resistor Rg is called a gate resistor and plays a role of adjusting the voltage rise time of the on signal and adjusting the fall time of the off signal.
これら方式はそれぞれ一長一短の特徴がある。フォトカプラは安価で，実装面積および体積が小さいというメリットがあるが，光絶縁部の伝送効率の点で１次−２次間の距離を離すことができず，１次−２次間の絶縁耐圧を高くすることに限界があることや，ある程度の伝送時間が必要で，その伝送時間にも個体差（ばらつき）がある，といったデメリットがある。 Each of these methods has advantages and disadvantages. The photocoupler is inexpensive and has the advantages of a small mounting area and volume, but the primary-secondary insulation cannot be separated from the primary-secondary distance in terms of transmission efficiency of the optical insulation part. There is a demerit that there is a limit to increasing the withstand voltage, a certain amount of transmission time is required, and there is an individual difference (variation) in the transmission time.
絶縁トランスは，フォトカプラに比べて高価であり，実装面積，体積も大きい，さらには増幅機能を備えたスイッチ回路１３が必要といったデメリットもある。一方，大きさに制約がなければ絶縁電圧を高くすることが可能であり，また伝送時間もほぼゼロであるといったメリットがある。 The insulating transformer is expensive compared to the photocoupler, has a large mounting area and volume, and further has a demerit that a switch circuit 13 having an amplification function is necessary. On the other hand, if there is no restriction on the size, the insulation voltage can be increased and the transmission time is almost zero.
光ファイバケーブルはこれら３者の中では最も高価であり，また電気−光変換器（Ｅ/Ｏ）１４，光−電気変換器（Ｏ/Ｅ）１５が必要で，増幅機能を備えたスイッチ回路１３が必要といったデメリットがあるが，絶縁電圧を考慮する必要がなく，また長距離信号伝送も可能といったメリットがある。 An optical fiber cable is the most expensive of these three, and an electric-optical converter (E / O) 14 and an optical-electrical converter (O / E) 15 are necessary, and a switch circuit having an amplification function. 13 is necessary, but there is an advantage that it is not necessary to consider the insulation voltage and long-distance signal transmission is possible.
上記の特徴を活かして、一般に，２００Ｖ系や４００Ｖ系の低圧の装置にはフォトカプラが，装置を並列接続するような大容量のシステムには信号伝送時間ばらつきが問題とならないパルストランスが，また高絶縁耐量が必要となる数１０００Ｖ系以上の高圧装置には光ファイバケーブルが適用されることが多い。
フォトカプラを適用した例は，特許文献１に、パルストランスを適用した例は特許文献２に，光ファイバケーブルを適用した例として，特許文献３に、各々記載されている。
Taking advantage of the above features, photocouplers are generally used for 200V and 400V low-voltage devices, pulse transformers that do not cause variations in signal transmission time for large-capacity systems where devices are connected in parallel, and In many cases, an optical fiber cable is applied to a high-voltage apparatus of several thousand volts or more that requires high insulation resistance.
An example in which a photocoupler is applied is described in Patent Document 1, an example in which a pulse transformer is applied is described in Patent Document 2, and an example in which an optical fiber cable is applied is described in Patent Document 3.
上述のように、数１０００Ｖクラスの高圧の装置では，一般的に信号絶縁手段として光ファイバケーブルを適用しているため，コストアップ要因となる。
また図１１の回路方式をベースに高圧回路を構成する場合の例を図１５に示す。本回路例は非特許文献１に記載されているフライングキャパシタ形電力変換回路と呼ばれ，高耐圧の半導体スイッチ素子を適用せずに，低耐圧の半導体スイッチ素子を直列に接続（Ｑ１〜Ｑ４）し，さらに半導体スイッチ素子Ｑ１とＱ２の接続点とＱ３とＱ４の接続点との間にコンデンサ２１，２２の直列回路を接続する構成である。例えば、直流単電源１ａ〜１ｄで構成された直流電源電圧を４Ｅｄとした場合，フライングキャパシタＣ１、Ｃ２の各々の電圧をＥｄ（合計で２Ｅｄ）とすることで交流出力点Ａｕには，Ｍ電位を基準に２Ｅｄ，Ｍ，−２Ｅｄの３つのレベルの電位を出力可能となるため，本回路は３レベルのインバータとなる。本回路例のように３レベル以上のマルチレベルインバータの場合，一般にスイッチ素子数が多くなるため，その数に応じて光ファイバケーブルの数も必要となり，さらなるコストアップ要因となる。
従って、本発明の課題は、高電圧の電力変換回路を構成する半導体スイッチ素子に制御回路から駆動信号を絶縁して伝送する回路方式として、光ファイバケーブルなどの高価な絶縁手段を用いない低価格の絶縁回路方式とそれを用いた低価格の電力変換装置を提供することである。
As described above, a high-voltage device of several thousand volts class generally uses an optical fiber cable as a signal insulation means, which increases the cost.
FIG. 15 shows an example in which a high voltage circuit is configured based on the circuit system of FIG. This circuit example is called a flying capacitor type power conversion circuit described in Non-Patent Document 1, and low-voltage semiconductor switch elements are connected in series without applying a high-voltage semiconductor switch element (Q1 to Q4). In addition, a series circuit of capacitors 21 and 22 is connected between the connection point of the semiconductor switch elements Q1 and Q2 and the connection point of Q3 and Q4. For example, when the DC power supply voltage constituted by the DC single power supplies 1a to 1d is 4Ed, the voltage of each of the flying capacitors C1 and C2 is set to Ed (2Ed in total), so that the AC output point Au has an M potential. Therefore, this circuit can be a three-level inverter because potentials of three levels of 2Ed, M, and -2Ed can be output. In the case of a multi-level inverter with three or more levels as in this circuit example, the number of switch elements generally increases, so the number of optical fiber cables is also required according to the number of switch elements, which further increases the cost.
Accordingly, an object of the present invention is to provide a low cost without using expensive insulating means such as an optical fiber cable as a circuit system for insulating and transmitting a drive signal from a control circuit to a semiconductor switch element constituting a high voltage power conversion circuit. Insulation circuit system and a low-cost power converter using the same.
上述の課題を解決するために、第１の発明においては、半導体スイッチ素子直列回路と、半導体スイッチ素子をオンオフ制御する駆動信号絶縁回路と、キャパシタとからなるフライングキャパシタ形電力変換装置として、前記駆動信号絶縁回路は、駆動信号を異電位間で絶縁して伝送し、絶縁トランスを用いた信号絶縁回路とフォトカプラを用いた信号絶縁回路とを直列接続して二重絶縁した直列絶縁回路にて構成され、前記半導体スイッチ素子直列回路は、直流電源と並列に２ｎ（ｎは２以上の整数）個の半導体スイッチ素子が直列接続されており、前記半導体スイッチ素子直列回路の中間点を中心に２Ｎ（Ｎは１〜ｎ−１までの整数）個のキャパシタが半導体スイッチ素子直列回路と並列に接続されており、前記駆動信号絶縁回路は、前記半導体スイッチ素子の各々に適用されており、前記いずれかのフライングキャパシタの中間電位点に、前記半導体スイッチ素子の各々に適用された前記絶縁トランスを用いた信号絶縁回路と前記フォトカプラを用いた信号絶縁回路とを直列接続した駆動信号絶縁回路の直列接続点が接続される。
第２の発明においては、第１の半導体スイッチ素子直列回路と、第２の半導体スイッチ素子直列回路と、半導体スイッチ素子をオンオフ制御する駆動信号絶縁回路と、キャパシタとからなるフライングキャパシタ形電力変換装置として、前記駆動信号絶縁回路は、駆動信号を異電位間で絶縁して伝送し、絶縁トランスを用いた信号絶縁回路とフォトカプラを用いた信号絶縁回路とを直列接続して二重絶縁した直列絶縁回路にて構成され、前記第１の半導体スイッチ素子直列回路は、直流電源と並列に２ｎ（ｎは２以上の整数）個の半導体スイッチ素子が直列接続されており、前記第１の半導体スイッチ素子直列回路の中間点を中心に２Ｎ（Ｎは１〜ｎ−１までの整数）個のキャパシタが第１の半導体スイッチ素子直列回路と並列に接続されており、前記第２の半導体スイッチ素子直列回路は、前記Ｎの最大値で決められたキャパシタと並列に複数の半導体素子が直列接続されており、前記第２の半導体スイッチ素子直列回路の中間接続点と前記直流電源の中間電位点との間に双方向のスイッチングが可能な双方向スイッチを接続されており、前記半導体スイッチ素子の各々に前記駆動信号絶縁回路が適用されており、前記いずれかのフライングキャパシタの中間電位点に、前記半導体スイッチ素子の各々に適用された前記絶縁トランスを用いた信号絶縁回路と前記フォトカプラを用いた信号絶縁回路とを直列接続した駆動信号絶縁回路の直列接続点が接続される。
In order to solve the above-mentioned problem, in the first invention, the driving capacitor type power conversion device comprising a semiconductor switch element series circuit, a drive signal insulating circuit for controlling on / off of the semiconductor switch element, and a capacitor is provided. The signal insulation circuit is a series insulation circuit that transmits and transmits drive signals between different potentials, and double-insulates the signal insulation circuit using an insulation transformer and the signal insulation circuit using a photocoupler in series. In the semiconductor switch element series circuit, 2n (n is an integer of 2 or more) semiconductor switch elements are connected in series in parallel with a DC power source, and 2N centering on an intermediate point of the semiconductor switch element series circuit. (N is an integer from 1 to n-1) capacitors are connected in parallel with the semiconductor switch element series circuit, and the drive signal insulation circuit A signal insulating circuit that is applied to each of the semiconductor switch elements, and that uses the isolation transformer applied to each of the semiconductor switch elements at an intermediate potential point of any one of the flying capacitors, and a signal that uses the photocoupler A series connection point of the drive signal insulation circuit in which the insulation circuit is connected in series is connected.
In a second invention, a flying capacitor type power converter comprising a first semiconductor switch element series circuit, a second semiconductor switch element series circuit, a drive signal insulation circuit for controlling on / off of the semiconductor switch element, and a capacitor As described above, the drive signal isolation circuit transmits a drive signal by insulating between different potentials, and a signal isolation circuit using an isolation transformer and a signal isolation circuit using a photocoupler are connected in series and double-insulated. The first semiconductor switch element series circuit includes 2n (n is an integer of 2 or more) semiconductor switch elements connected in series with the DC power source, and the first semiconductor switch element series circuit 2N (N is an integer from 1 to n-1) capacitors are connected in parallel with the first semiconductor switch element series circuit, centering on the intermediate point of the element series circuit. In the second semiconductor switch element series circuit, a plurality of semiconductor elements are connected in series with the capacitor determined by the maximum value of N, and an intermediate connection point of the second semiconductor switch element series circuit. And a bidirectional switch capable of bidirectional switching is connected between the DC power supply and the intermediate potential point of the DC power supply, and the drive signal isolation circuit is applied to each of the semiconductor switch elements, A series connection point of a drive signal insulation circuit in which a signal insulation circuit using the insulation transformer applied to each of the semiconductor switch elements and a signal insulation circuit using the photocoupler are connected in series to an intermediate potential point of a flying capacitor. Is connected.
第３の発明においては、第１〜第２の発明における電力変換装置の駆動信号絶縁回路において、前記駆動信号の送信元となる基準電位側を絶縁トランスを用いた信号絶縁回路とし、前記半導体スイッチ素子側をフォトカプラを用いた信号絶縁回路とする。
According to a third aspect of the present invention, in the drive signal isolation circuit of the power conversion device according to the first to second aspects of the invention, the reference potential side serving as the transmission source of the drive signal is a signal isolation circuit using an isolation transformer, and the semiconductor switch The element side is a signal insulation circuit using a photocoupler.
第４の発明においては、第３の発明における電力変換装置の駆動信号絶縁回路において、前記絶縁トランスの１次巻線を前記基準電位側で駆動し、前記絶縁トランスの２次巻線から前記フォトカプラのフォトダイオードにオン信号時の電流を供給する。
According to a fourth aspect of the invention, in the drive signal isolation circuit for the power conversion device according to the third aspect of the invention, the primary winding of the isolation transformer is driven on the reference potential side, and the photovoltaic is supplied from the secondary winding of the isolation transformer. The current at the ON signal is supplied to the photodiode of the coupler.
第５の発明においては、第３〜第４の発明における電力変換装置の駆動信号絶縁回路において、前記絶縁トランスを用いた信号絶縁回路と前記フォトカプラを用いた信号絶縁回路とを直列接続する直列接続点を、前記基準電位と前記直列絶縁回路を介して駆動する半導体スイッチ素子のエミッタ電位との間の中間電位点に接続する。
According to a fifth aspect of the present invention, in the drive signal isolation circuit of the power conversion device according to the third to fourth aspects, the signal isolation circuit using the isolation transformer and the signal isolation circuit using the photocoupler are connected in series. A connection point is connected to an intermediate potential point between the reference potential and the emitter potential of the semiconductor switch element driven through the series insulating circuit.
本発明では、高電圧の電力変換装置に適用するゲート駆動信号の絶縁器として光ファイバケーブルを使用せず，絶縁トランスと低廉のフォトカプラのみを使用し、絶縁トランスによる信号絶縁回路とフォトカプラによる信号絶縁回路を直列接続構成とし、直列接続点を前記基準電位と前記直列絶縁回路を介して駆動する半導体スイッチ素子のエミッタ電位との間の中間電位点に接続するようにしている。
この結果、絶縁器として低耐圧の絶縁トランスと低耐圧のフォトカプラで、高電圧の回路に信号を絶縁伝送することが可能となり、高電圧回路に適用可能な低価格の信号絶縁回路とそれを用いた低価格の高電圧の電力変換装置を提供することが可能となる。
In the present invention, an optical fiber cable is not used as an insulator for a gate drive signal applied to a high-voltage power converter, only an insulating transformer and a low-cost photocoupler are used, and a signal insulating circuit using an insulating transformer and a photocoupler are used. The signal insulation circuit has a series connection configuration, and the series connection point is connected to an intermediate potential point between the reference potential and the emitter potential of the semiconductor switch element driven via the series insulation circuit.
As a result, a low-voltage isolation transformer and a low-voltage photocoupler can be used as an isolator to insulate and transmit a signal to a high-voltage circuit. It is possible to provide a low-cost, high-voltage power converter that is used.
本発明の要点は、電力変換装置に適用する半導体スイッチ素子をオンオフ制御する駆動信号を、異電位間で絶縁して伝送する手段として、絶縁トランスを用いた信号絶縁回路とフォトカプラを用いた信号絶縁回路とを直列接続して二重絶縁した直列絶縁回路にて構成し、前記直列絶縁回路の直列接続点を、基準電位と前記直列絶縁回路を介して駆動する半導体スイッチ素子のエミッタ電位との間の中間電位点に接続し、絶縁器として低耐圧の絶縁トランスと低耐圧のフォトカプラを適用可能としている点である。 The gist of the present invention is that a signal using an insulating transformer and a signal using a photocoupler as means for transmitting a drive signal for controlling on / off of a semiconductor switch element applied to a power conversion device between different potentials. The insulation circuit is connected in series to form a double insulation series insulation circuit, and the series connection point of the series insulation circuit is defined as a reference potential and an emitter potential of a semiconductor switch element driven through the series insulation circuit. It is connected to an intermediate potential point between them, and a low-voltage insulating transformer and a low-voltage photocoupler can be applied as an insulator.
図１に、本発明の第1の実施例を示す。絶縁トランス１０と１１を用いたトランス絶縁回路ＰＴＣとフォトカプラ回路９を用いたフォトカプラ絶縁回路ＰＣＣとを直列接続した二重絶縁回路で、制御回路からのオンオフ信号を絶縁して半導体スイッチ素子としてのＩＧＢＴのゲートに伝送する回路である。トランス絶縁回路ＰＴＣは、制御回路からのオンオフ信号を端子ＩＮからスイッチ回路１７に入力し、スイッチ回路１７では入力されたオンオフ信号を位相が１８０度ずれた二つの高周波信号に変調して、絶縁トランス１０の１次巻線ｎ１と１１の１次巻線ｎ１を駆動し、各絶縁トランスの２次巻線ｎ２の電圧を整流ダイオードＲＤで整流して、復調する構成である。トランス絶縁回路ＰＴＣの出力端子ＳＰとＳＮ間にはＩＮ端子のオンオフ信号が絶縁されたオンオフ信号として出力される。 FIG. 1 shows a first embodiment of the present invention. A double insulation circuit in which a transformer insulation circuit PTC using the insulation transformers 10 and 11 and a photocoupler insulation circuit PCC using the photocoupler circuit 9 are connected in series to isolate an on / off signal from the control circuit as a semiconductor switch element This is a circuit for transmitting to the gate of the IGBT. The transformer insulation circuit PTC inputs an on / off signal from the control circuit to the switch circuit 17 from the terminal IN, and the switch circuit 17 modulates the inputted on / off signal into two high-frequency signals whose phases are shifted by 180 degrees, and the insulation transformer The primary winding n1 of 10 and the primary winding n1 of 11 are driven, and the voltage of the secondary winding n2 of each insulating transformer is rectified by a rectifier diode RD and demodulated. An ON / OFF signal of the IN terminal is output as an insulated ON / OFF signal between the output terminals SP and SN of the transformer insulation circuit PTC.
このオンオフ信号はフォトカプラ絶縁回路ＰＣＣの入力端子ＰＡとＰＢに入力され、オン信号時はフォトカプラ回路９の１次回路であるフォトダイオードを抵抗Ｒｐを介して駆動し、フォトカプラの２次回路であるフォトトランジスタを用いたゲート駆動回路でゲート駆動回路用電源ＧＰＳからゲート抵抗Ｒｇを介してＩＧＢＴＱ１のゲートにオン用順バイアス電圧を供給する。オフ信号時は、ゲート駆動回路用電源ＧＰＳからゲート抵抗Ｒｇを介してＩＧＢＴＱ１のゲートにオフ用逆バイアス電圧を供給する。 This on / off signal is inputted to the input terminals PA and PB of the photocoupler insulation circuit PCC. When the on signal is turned on, the photodiode which is the primary circuit of the photocoupler circuit 9 is driven via the resistor Rp, and the photocoupler secondary circuit is driven. A gate drive circuit using a phototransistor as described above supplies a turn-on forward bias voltage from the gate drive circuit power supply GPS to the gate of the IGBT Q1 through the gate resistor Rg. When the signal is off, a reverse bias voltage for off is supplied from the gate drive circuit power supply GPS to the gate of the IGBT Q1 through the gate resistor Rg.
この様な構成において、前記絶縁トランスを用いたトランス絶縁回路ＰＴＣと前記フォトカプラを用いたフォトカプラ絶縁回路ＰＣＣとを直列接続する端子ＳＮとＰＢとの直列接続点８を、制御回路側の基準電位と前記直列絶縁回路を介して駆動する半導体スイッチ素子（ＩＧＢＴ）Ｑ１のエミッタ電位との間の中間電位点に接続することにより、基準電位とエミッタ電位との電位差の半分が絶縁トランス１０と１１の１次巻線と２次巻線との間、及びフォトカプラの１次フォトダイオードと２次フォトトランジスタとの間に印加されることになる。従って、絶縁器として、従来の回路構成に比べて半分の電位差に耐える絶縁トランスとフォトカプラを適用することが可能となる。また、基準電位側にフォトカプラを用いた回路を適用し、半導体スイッチ素子側に絶縁トランスを用いた構成も実現可能であるが、フォトカプラの２次側回路を駆動するための電源が必要となり、コスト的に不利となる。本実施例の構成では、絶縁トランスの２次巻線からフォトダイオードに電流を流すことができるため、絶縁トランスの２次回路（中間回路部）に電源は不要となる。 In such a configuration, the series connection point 8 of the terminals SN and PB for connecting the transformer insulation circuit PTC using the insulation transformer and the photocoupler insulation circuit PCC using the photocoupler in series is defined as a reference on the control circuit side. By connecting to an intermediate potential point between the potential and the emitter potential of the semiconductor switch element (IGBT) Q1 driven through the series insulation circuit, half of the potential difference between the reference potential and the emitter potential is reduced to the isolation transformers 10 and 11. Between the primary winding and secondary winding of the photocoupler and between the primary photodiode and secondary phototransistor of the photocoupler. Therefore, it is possible to apply an insulating transformer and a photocoupler that can withstand a half potential difference as compared with a conventional circuit configuration as an insulator. In addition, a circuit using a photocoupler on the reference potential side and an insulating transformer on the semiconductor switch element side can be realized. However, a power source for driving the secondary side circuit of the photocoupler is required. This is disadvantageous in terms of cost. In the configuration of this embodiment, since a current can flow from the secondary winding of the insulation transformer to the photodiode, a power source is not required for the secondary circuit (intermediate circuit portion) of the insulation transformer.
図２に、本発明の第２の実施例を示す。３レベル出力のフライングキャパシタ形インバータ回路に、実施例１で説明した二重絶縁した直列絶縁回路を用いたゲート駆動回路を適用した３レベル３相インバータの回路である。回路構成は同じ１相分の回路を３回路分（Ｕ相用、Ｖ相用、Ｗ相用）用いて構成しているので、Ｕ相について説明する。直流単電源１ａ〜１ｄを直列接続した直流電源と並列にダイオードを逆並列接続したＩＧＢＴを４個（Ｑ１〜Ｑ４）直列接続したＩＧＢＴ直列回路を接続し、ＩＧＢＴＱ１とＱ２の接続点とＩＧＢＴＱ３とＱ４の接続点との間にコンデンサＣ１とＣ２の直列回路を接続し、ＩＧＢＴＱ２とＱ３との接続点を交流出力とした回路が１相分の主回路構成である。ＩＧＢＴＱ１〜Ｑ４の各ゲートには実施例１で説明した二重絶縁した直列絶縁回路を用いたゲート駆動回路が接続されており、各ゲート駆動回路の入力ＩＮには制御回路７から各々オンオフ信号が供給される。
ここで、各ゲート駆動回路の入力ＩＮと制御回路７からのオンオフ信号との接続線に４ｗと記載されているのは、４個分の信号線が配線されていることを意味する。
FIG. 2 shows a second embodiment of the present invention. This is a three-level three-phase inverter circuit in which the gate drive circuit using the double-insulated series insulating circuit described in the first embodiment is applied to the three-level output flying capacitor inverter circuit. Since the circuit configuration is the same one-phase circuit using three circuits (for U phase, V phase, and W phase), the U phase will be described. An IGBT series circuit in which four (Q1 to Q4) series-connected IGBTs having anti-parallel diodes connected in parallel with a DC power source connected in series with DC single power sources 1a to 1d are connected, and a connection point between IGBTs Q1 and Q2 and IGBTs Q3 and Q4. A circuit in which a series circuit of capacitors C1 and C2 is connected between the connection points and the connection point between the IGBTs Q2 and Q3 is an AC output is the main circuit configuration for one phase. Each of the gates of the IGBTs Q1 to Q4 is connected to a gate drive circuit using the double-insulated series insulation circuit described in the first embodiment, and an ON / OFF signal is supplied from the control circuit 7 to the input IN of each gate drive circuit. Supplied.
Here, 4w is written on the connection line between the input IN of each gate drive circuit and the on / off signal from the control circuit 7, which means that four signal lines are wired.
この様な回路構成において、直流単電源の電圧を各々Ｅｄ、コンデンサＣ１とＣ２の電圧を各々Ｅｄとすると、直流電源の中間点Ｍの電圧を零として、例えば、ＩＧＢＴＱ１とＱ２をオンすると交流出力には２Ｅｄが、ＩＧＢＴＱ１とＱ３をオンすると交流出力には零が、ＩＧＢＴＱ３とＱ４をオンすると交流出力には−２Ｅｄが、各々出力され、３レベルの変換動作となる。 In such a circuit configuration, assuming that the voltage of the single DC power supply is Ed and the voltages of the capacitors C1 and C2 are Ed respectively, the voltage at the intermediate point M of the DC power supply is set to zero. For example, when IGBTs Q1 and Q2 are turned on, AC output 2Ed, when IGBTs Q1 and Q3 are turned on, zero is output to the AC output, and when IGBTs Q3 and Q4 are turned on, -2Ed is output to the AC output, respectively, and a three-level conversion operation is performed.
一般に数ｋＶクラス以上の高圧回路の場合，安全性の観点から浮遊電位となる回路は作らず，全ての回路や金属物はいずれかの電位に接続する必要がある。図１における端子ＳＮとＰＢとの直列接続点８をいずれかの電位に接続する必要がある。
図２に示すフライングキャパシタ形のインバータ回路においては，絶縁トランスの１次側（制御回路側の基準電位）をＭ点（０電位）に接続した場合，図１における絶縁トランスとフォトカプラ間の直列接続点８は，Ｑ１用はＥｄ電位のＥ１に，Ｑ２用，Ｑ３用はフライングキャパシタＣ１とＣ２の接続点Ｅ３に，Ｔ４用は−Ｅｄ電位のＥ２に、各々接続する。
In general, in the case of a high-voltage circuit of several kV class or more, a circuit having a floating potential is not made from the viewpoint of safety, and all circuits and metal objects need to be connected to any potential. It is necessary to connect the serial connection point 8 between the terminals SN and PB in FIG. 1 to any potential.
In the flying capacitor type inverter circuit shown in FIG. 2, when the primary side of the insulation transformer (reference potential on the control circuit side) is connected to point M (0 potential), the series connection between the insulation transformer and the photocoupler in FIG. The connection point 8 is connected to E1 of the Ed potential for Q1, to the connection point E3 of the flying capacitors C1 and C2 for Q2 and Q3, and to E2 of -Ed potential for T4.
本回路構成とした場合の各ゲート駆動回路の，ゲート駆動回路が動作する基準電位，絶縁トランス回路ＰＴＣの出力とフォトカプラ回路ＰＣＣの入力との接続点である中間回路の電位（絶縁トランスの１次と２次間に印加される電圧），およびフォトカプラの１次と２次間に印加される最大電圧値のまとめを図３に示す。本図から判るように，全ての絶縁トランス及びフォトカプラの１次と２次間に印加される電圧の絶対値はＥｄとなる。すなわち，Ｅｄの電圧に対して必要となる絶縁耐量を有した絶縁トランス及びフォトカプラを選定すればよいことが判る。 In the case of this circuit configuration, each gate drive circuit has a reference potential at which the gate drive circuit operates, an intermediate circuit potential (1 of the isolation transformer) that is a connection point between the output of the isolation transformer circuit PTC and the input of the photocoupler circuit PCC. FIG. 3 shows a summary of the maximum voltage value applied between the primary and secondary of the photocoupler. As can be seen from this figure, the absolute value of the voltage applied between the primary and secondary of all the insulating transformers and photocouplers is Ed. That is, it can be understood that an insulating transformer and a photocoupler having a dielectric strength required for the voltage of Ed may be selected.
図４に、本発明の第３の実施例を示す。４レベル出力のフライングキャパシタ形インバータ回路に、実施例１で説明した二重絶縁した直列絶縁回路を用いたゲート駆動回路を適用した４レベル３相インバータの回路の１相分の回路構成である。直流単電源１ａ〜１ｆを直列接続した直流電源と並列にダイオードを逆並列接続したＩＧＢＴを６個（Ｑ１〜Ｑ６）直列接続したＩＧＢＴ直列回路を接続し、ＩＧＢＴＱ２とＱ３の接続点とＩＧＢＴＱ４とＱ５の接続点との間にコンデンサＣ１とＣ２の直列回路を、ＩＧＢＴＱ１とＱ２の接続点とＩＧＢＴＱ５とＱ６の接続点との間にコンデンサＣ３とＣ４の直列回路を、各々接続し、ＩＧＢＴＱ３とＱ４との接続点を交流出力とした回路が１相分の主回路構成である。ＩＧＢＴＱ１〜Ｑ６の各ゲートには実施例１で説明した二重絶縁した直列絶縁回路を用いたゲート駆動回路が接続されており、各ゲート駆動回路の入力ＩＮには制御回路７から各々オンオフ信号が供給される。
ここで、各ゲート駆動回路の入力ＩＮと制御回路７からのオンオフ信号との接続線に６ｗと記載されているのは、６個分の信号線が配線されていることを意味する。
FIG. 4 shows a third embodiment of the present invention. This is a circuit configuration for one phase of a four-level three-phase inverter circuit in which the gate drive circuit using the double-insulated series insulating circuit described in the first embodiment is applied to a four-level output flying capacitor inverter circuit. An IGBT series circuit having six (Q1 to Q6) series-connected IGBTs having anti-parallel diodes connected in parallel to a DC power source connected in series with single DC power sources 1a to 1f is connected, and a connection point between IGBTs Q2 and Q3 and IGBTs Q4 and Q5. A series circuit of capacitors C1 and C2 is connected between the connection points of IGBTs Q1 and Q2, and a series circuit of capacitors C3 and C4 is connected between a connection point of IGBTs Q5 and Q6, and IGBTs Q3 and Q4, respectively. A circuit having an AC output at the connection point is the main circuit configuration for one phase. Each of the gates of the IGBTs Q1 to Q6 is connected to a gate drive circuit using the double-insulated series insulation circuit described in the first embodiment, and an ON / OFF signal is supplied from the control circuit 7 to the input IN of each gate drive circuit. Supplied.
Here, 6w is described as a connection line between the input IN of each gate drive circuit and the on / off signal from the control circuit 7, which means that 6 signal lines are wired.
この様な回路構成において、直流単電源１ａ〜１ｆの電圧を各々Ｅｄ、コンデンサＣ１とＣ２の電圧を各々Ｅｄ、コンデンサＣ３とＣ４の電圧を各々２Ｅｄとすると、直流電源の中間点Ｍの電圧を零として、例えば、ＩＧＢＴＱ１〜Ｑ３をオンすると交流出力には３Ｅｄが、ＩＧＢＴＱ１、Ｑ２、Ｑ４をオンすると交流出力にはＥｄが、ＩＧＢＴＱ３、Ｑ５、Ｑ６をオンすると交流出力には−Ｅｄが、ＩＧＢＴＱ４、Ｑ５、Ｑ６をオンすると−３Ｅｄが、各々出力され、４レベルの変換動作となる。 In such a circuit configuration, assuming that the voltages of the single DC power sources 1a to 1f are Ed, the voltages of the capacitors C1 and C2 are Ed, and the voltages of the capacitors C3 and C4 are 2Ed, respectively, the voltage at the intermediate point M of the DC power source is For example, when the IGBTs Q1 to Q3 are turned on, 3Ed is output to the AC output, and when the IGBTs Q1, Q2, and Q4 are turned ON, Ed is output to the AC output, and when the IGBTs Q3, Q5, and Q6 are turned on, , Q5 and Q6 are turned on, -3Ed is output, and a four-level conversion operation is performed.
この様な構成における各ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点と、絶縁トランス１次−２次間電圧と、フォトカプラ１次−２次間電圧と、の関係を図５に示す。接続点Ｅ１は直流単電源１ａと１ｂの接続点、接続点Ｅ２は直流単電源１ｂと１ｃの接続点、接続点Ｅ３は直流単電源１ｄと１ｅの接続点、接続点Ｅ４は直流単電源１ｅと１ｆの接続点、接続点Ｅ５はコンデンサＣ１とＣ２の接続点、接続点Ｅ６はコンデンサＣ３とＣ４の接続点、である。Ｑ１用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ１に、Ｑ２用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ５に、Ｑ３用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ５に、Ｑ４用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ４に、Ｑ５用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ４に、Ｑ６用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ５に、各々接続すると、絶縁トランス１０、１１の１次−２次間電圧は２Ｅｄに、フォトカプラの１次−２次間電圧はＥｄとなる。また、Ｑ１用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ２に、Ｑ２用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ２に、Ｑ３用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ３に、Ｑ４用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ６に、Ｑ５用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ３に、Ｑ６用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８をＥ６に、各々接続すると、絶縁トランス１０、１１の１次−２次間電圧はＥｄに、フォトカプラの１次−２次間電圧は２Ｅｄとなる。 In such a configuration, the relationship between the connection point of the insulation transformer of each gate drive circuit and the intermediate circuit potential 8 of the photocoupler, the insulation transformer primary-secondary voltage, and the photocoupler primary-secondary voltage is expressed as follows. As shown in FIG. Connection point E1 is a connection point between DC single power sources 1a and 1b, connection point E2 is a connection point between DC single power sources 1b and 1c, connection point E3 is a connection point between DC single power sources 1d and 1e, and connection point E4 is a DC single power source 1e. And 1f, a connection point E5 is a connection point between capacitors C1 and C2, and a connection point E6 is a connection point between capacitors C3 and C4. Q1 gate drive circuit isolation transformer and photocoupler intermediate circuit potential 8 is E1, Q2 gate drive circuit isolation transformer and photocoupler intermediate circuit potential 8 is E5, Q3 gate drive circuit isolation transformer and photocoupler The intermediate circuit potential 8 of the coupler is set to E5, the intermediate circuit potential 8 of the Q4 gate drive circuit and the photocoupler is set to E4, and the intermediate circuit potential 8 of the Q5 gate drive circuit and the photocoupler is set to E4. When the intermediate circuit potential 8 of the Q6 gate drive circuit and the photocoupler is connected to E5, the primary-secondary voltage of the isolation transformers 10 and 11 is 2 Ed, and the primary-secondary of the photocoupler The voltage is Ed. The Q1 gate drive circuit isolation transformer and photocoupler intermediate circuit potential 8 is set to E2, the Q2 gate drive circuit isolation transformer and photocoupler intermediate circuit potential 8 is set to E2, and the Q3 gate drive circuit isolation transformer is set to E2. The intermediate circuit potential 8 of the Q4 gate drive circuit and the intermediate circuit potential 8 of the photocoupler are set to E6, and the intermediate circuit potential 8 of the Q5 gate drive circuit and the photocoupler is set to E3. When the intermediate circuit potential 8 of the Q6 gate drive circuit and the photocoupler is connected to E6, the primary-secondary voltage of the isolation transformers 10 and 11 is Ed, and the primary-2 of the photocoupler is primary-2. The inter-next voltage is 2Ed.
図６に、本発明の第４の実施例を示す。実施例２で説明した３レベル出力のフライングキャパシタ形インバータ回路のコンデンサＣ１とＣ２の直列回路と並列に半導体スイッチ素子（ＩＧＢＴ）Ｑ５、Ｑ６を直列接続した第２の半導体スイッチ直列回路を接続し、前記第２の半導体スイッチ直列回路の直列接続点と直流電源の中間電位点との間に双方向の電流をオンオフ可能な逆阻止形ＩＧＢＴＱ１１とＱ１２で構成した双方向スイッチを接続し、さらにＩＧＢＴＱ１を３個のＩＧＢＴ（Ｑ１ａ、Ｑ１ｂ、Ｑ１ｃ）の直列回路に、ＩＧＢＴＱ４を３個のＩＧＢＴ（Ｑ４ａ、Ｑ４ｂ、Ｑ４ｃ）の直列回路に変更したものである。この回路は５レベル出力のフライングキャパシタ形インバータ回路と呼ばれる。詳細は特開２０１２−１８２９７４号公報に記載されているので、動作説明は省略する。 FIG. 6 shows a fourth embodiment of the present invention. A second semiconductor switch series circuit in which semiconductor switch elements (IGBTs) Q5 and Q6 are connected in series is connected in parallel with the series circuit of the capacitors C1 and C2 of the three-level output flying capacitor type inverter circuit described in the second embodiment. A bidirectional switch composed of reverse blocking IGBTs Q11 and Q12 capable of turning on and off a bidirectional current is connected between a series connection point of the second semiconductor switch series circuit and an intermediate potential point of the DC power supply. The IGBT Q4 is changed to a series circuit of three IGBTs (Q4a, Q4b, Q4c) in a series circuit of three IGBTs (Q1a, Q1b, Q1c). This circuit is called a 5-level output flying capacitor type inverter circuit. Since details are described in Japanese Patent Application Laid-Open No. 2012-182974, description of the operation is omitted.
この様な構成において、直流単電源１ａ〜１ｄの電圧を各々Ｅｄ、コンデンサＣ１とＣ２の電圧を各々Ｅｄ／２とし、直流電源の中間電位点Ｍを零、直流単電源１ａと１ｂの接続点をＥ１、直流単電源１ｃと１ｄの接続点をＥ２、コンデンサＣ１とＣ２の接続点をＥ３とした時の、各ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点と、絶縁トランス１次−２次間電圧と、フォトカプラ１次−２次間電圧と、の関係を図７に示す。Ｑ１ａ用とＱ１ｂ用のゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点をＥ１に、Ｑ１ｃ用、Ｑ２用、Ｑ３用及びＱ６用のゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点をＥ３に、Ｑ４ａ用、Ｑ４ｂ用及びＱ４ｃ用ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点をＥ２に、各々接続することにより、絶縁トランスの１次−２次間電圧とフォトカプラの１次−２次間電圧は図７に示すようになる。絶縁トランスの１次−２次間電圧とフォトカプラの１次−２次間電圧合計値は２Ｅｄであるが、ＥｄとＥｄに分割して負担、３／２ＥｄとＥｄ／２に分担して負担する何れかとなる。ここで、Ｑ７用、Ｑ８用及びＱ５用のゲート駆動回路の入出力間には電圧Ｅｄが印加されるだけであるので、二重絶縁の必要性はない。 In such a configuration, the voltages of the DC single power supplies 1a to 1d are each Ed, the voltages of the capacitors C1 and C2 are each Ed / 2, the intermediate potential point M of the DC power supply is zero, and the connection point of the DC single power supplies 1a and 1b. Is E1, the connection point of the single DC power supplies 1c and 1d is E2, and the connection point of the capacitors C1 and C2 is E3. The insulation transformer of each gate drive circuit and the connection point of the intermediate circuit potential 8 of the photocoupler are isolated from each other. The relationship between the transformer primary-secondary voltage and the photocoupler primary-secondary voltage is shown in FIG. Q1a and Q1b gate drive circuit isolation transformer and photocoupler intermediate circuit potential 8 connection point is E1, intermediate between Q1c, Q2, Q3 and Q6 gate drive circuit isolation transformer and photocoupler By connecting the connection point of the circuit potential 8 to E3 and the connection point of the intermediate transformer potential 8 of the gate drive circuit for Q4a, Q4b and Q4c and the intermediate circuit potential 8 of the photocoupler to E2, respectively, the primary of the insulation transformer The -secondary voltage and the photocoupler primary-secondary voltage are as shown in FIG. The total value of the primary-secondary voltage of the isolation transformer and the primary-secondary voltage of the photocoupler is 2Ed, but it is divided into Ed and Ed, and is divided into 3 / 2Ed and Ed / 2. It becomes either. Here, since only the voltage Ed is applied between the input and output of the gate drive circuits for Q7, Q8, and Q5, there is no need for double insulation.
図８に、本発明の第５の実施例を示す。実施例３で説明した４レベル出力のフライングキャパシタ形インバータ回路のコンデンサＣ３とＣ４の直列回路と並列に半導体スイッチ素子（ＩＧＢＴ）Ｑ７〜Ｑ１０を直列接続した第２の半導体スイッチ直列回路を接続し、前記第２の半導体スイッチ直列回路の中間接続点と直流電源の中間電位点との間に、逆阻止形ＩＧＢＴＱ１１とＱ１２で構成した双方向の電流をオンオフ可能な双方向スイッチを接続し、さらにＩＧＢＴＱ１を４個のＩＧＢＴ（Ｑ１ａ、Ｑ１ｂ、Ｑ１ｃ、Ｑ１ｄ）の直列回路に、ＩＧＢＴＱ６を４個のＩＧＢＴ（Ｑ６ａ、Ｑ６ｂ、Ｑ６ｃ、Ｑ６ｄ）の直列回路に変更したものである。また、ＩＧＢＴＱ８とＱ９の直列回路と並列にコンデンサＣ５が接続される。この回路は７レベル出力のフライングキャパシタ形インバータ回路と呼ばれる。詳細は特願２０１２−００４７２３号に記載されているので、動作説明は省略する。 FIG. 8 shows a fifth embodiment of the present invention. A second semiconductor switch series circuit in which semiconductor switch elements (IGBTs) Q7 to Q10 are connected in series is connected in parallel with the series circuit of the capacitors C3 and C4 of the four-level output flying capacitor type inverter circuit described in the third embodiment, Between the intermediate connection point of the second semiconductor switch series circuit and the intermediate potential point of the DC power supply, a bidirectional switch configured by reverse blocking IGBTs Q11 and Q12 capable of turning on and off a bidirectional current is connected, and further, IGBTQ1 Is changed to a series circuit of four IGBTs (Q1a, Q1b, Q1c, Q1d), and IGBTQ6 is changed to a series circuit of four IGBTs (Q6a, Q6b, Q6c, Q6d). A capacitor C5 is connected in parallel with the series circuit of IGBTs Q8 and Q9. This circuit is called a 7-level output flying capacitor type inverter circuit. Since details are described in Japanese Patent Application No. 2012-004723, description of the operation is omitted.
このような構成において、直流単電源１ａ〜１ｆの電圧をＥｄ，コンデンサＣ１、Ｃ３〜Ｃ５の電圧をＥｄとし、直流単電源１ｂと１ｃの接続点をＥ１、直流単電源１ｄと１ｅの接続点をＥ２、コンデンサＣ３とＣ４の接続点をＥ３とした時の各ゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点と、絶縁トランス１次−２次間電圧と、フォトカプラ１次−２次間電圧と、の関係を図９に示す。
ＩＧＢＴＱ１ａ〜Ｑ１ｄ用のゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点をＥ１に、ＩＧＢＴＱ２〜Ｑ４用のゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点をＥ３に、ＩＧＢＴＱ５、Ｑ１０、Ｑ６ａ〜Ｑ６ｄ用のゲート駆動回路の絶縁トランスとフォトカプラの中間回路電位８の接続点をＥ２に、各々接続することにより、絶縁トランスの１次−２次間電圧とフォトカプラの１次−２次間電圧は図９に示すようになる。合計値は３Ｅｄであるが、Ｅｄと２Ｅｄに分割して負担する。ここで、ＩＧＢＴＱ８用、Ｑ１１用及びＱ１２用のゲート駆動回路の入出力間には電圧Ｅｄが、ＩＧＢＴ７と９用のゲート駆動回路の入出力間には電圧２Ｅｄが、印加されるだけであるので、二重絶縁の必要性はない。上述の例の他に、コンデンサＣ１やＣ５を分割する方法があり、絶縁トランスとフォトカプラの絶縁電圧分担を変更することができる。
In such a configuration, the voltage of the DC single power supplies 1a to 1f is Ed, the voltage of the capacitors C1 and C3 to C5 is Ed, the connection point of the DC single power supplies 1b and 1c is E1, and the connection point of the DC single power supplies 1d and 1e. , E2, the connection point of the capacitors C3 and C4 is E3, the connection point of the intermediate circuit potential 8 of the isolation transformer and the photocoupler of each gate drive circuit, the isolation transformer primary-secondary voltage, and the photocoupler 1 FIG. 9 shows the relationship between the secondary and secondary voltages.
The connection point between the insulation transformer of the gate drive circuit for IGBTs Q1a to Q1d and the intermediate circuit potential 8 of the photocoupler is E1, and the connection point of the insulation transformer of the gate drive circuit for IGBTs Q2 to Q4 and the intermediate circuit potential 8 of the photocoupler is E3. In addition, by connecting the connection point of the isolation transformer of the gate drive circuit for IGBTs Q5, Q10, and Q6a to Q6d and the intermediate circuit potential 8 of the photocoupler to E2, respectively, the primary-secondary voltage of the isolation transformer and the photo The primary-secondary voltage of the coupler is as shown in FIG. The total value is 3Ed, but it is divided into Ed and 2Ed. Here, only the voltage Ed is applied between the input and output of the gate drive circuits for the IGBT Q8, Q11 and Q12, and the voltage 2Ed is applied between the input and output of the gate drive circuits for the IGBTs 7 and 9. There is no need for double insulation. In addition to the above-described example, there is a method of dividing the capacitors C1 and C5, and the insulation voltage sharing between the insulation transformer and the photocoupler can be changed.
図１０に、本発明の第６の実施例を示す。直流単電源１ａと１ｂの直列回路で構成された直流電源と並列に半導体スイッチ素子Ｑ１とＱ２の直列接続回路を接続する２レベルインバータ回路の１相分の回路に、実施例１で説明した二重絶縁した直列絶縁回路を用いたゲート駆動回路を適用した２レベルインバータの回路の１相分の回路構成である。上下アーム（Ｑ１用、Ｑ２用）ともに同じゲート駆動回路が記載されているが、制御回路の基準電位を直流電源の負極Ｎに接続すれば、下アームのＩＧＢＴＱ２は基準電位となるので、二重絶縁した直列絶縁回路を用いる必要はない。上アームのＩＧＢＴＱ１は負極Ｎと正極Ｐの電位間で動作するので、ゲート駆動回路は絶縁トランスを用いた回路ＰＴＣとフォトカプラを用いた回路ＰＣＣを直列接続した構成とし、実施例１に示した直列接続点８は直流電源の中間接続点に接続する。この結果、ＩＧＢＴＱ１用のゲート駆動回路の絶縁トランスを用いた回路ＰＴＣとフォトカプラを用いた回路ＰＣＣへの印加電圧はＥｄ／２となり、絶縁器の小型化が図れる。
尚、本実施例の説明では、インバータ回路について説明したが、ＰＷＭ整流回路、直流−変換回路、マトリクスコンバータなどの周波数変換回路などの回路についても、適用可能である。
FIG. 10 shows a sixth embodiment of the present invention. A circuit for one phase of a two-level inverter circuit in which a series connection circuit of semiconductor switch elements Q1 and Q2 is connected in parallel with a DC power source constituted by a series circuit of DC single power sources 1a and 1b is described in the first embodiment. This is a circuit configuration for one phase of a circuit of a two-level inverter to which a gate drive circuit using a series insulated circuit that is heavily insulated is applied. Although the same gate drive circuit is described for the upper and lower arms (for Q1 and Q2), if the reference potential of the control circuit is connected to the negative electrode N of the DC power supply, the IGBT Q2 of the lower arm becomes the reference potential. There is no need to use an isolated series isolation circuit. Since the IGBT Q1 of the upper arm operates between the potential of the negative electrode N and the positive electrode P, the gate drive circuit has a configuration in which a circuit PTC using an insulating transformer and a circuit PCC using a photocoupler are connected in series, as shown in the first embodiment. The series connection point 8 is connected to the intermediate connection point of the DC power source. As a result, the voltage applied to the circuit PTC using the isolation transformer of the gate drive circuit for the IGBT Q1 and the circuit PCC using the photocoupler becomes Ed / 2, and the insulator can be miniaturized.
In the description of the present embodiment, the inverter circuit has been described. However, the present invention can also be applied to a circuit such as a PWM rectifier circuit, a DC-converter circuit, a frequency converter circuit such as a matrix converter.
本発明は、高電圧の電力変換回路のゲート駆動信号の絶縁技術に関し、電力変換装置全般に適用可能である。特に、高電圧を取り扱う高圧電動機駆動装置、系統連系用変換装置、鉄道車両駆動装置などへの適用が可能である。 The present invention relates to a technology for insulating a gate drive signal of a high-voltage power conversion circuit, and can be applied to all power conversion devices. In particular, the present invention can be applied to a high-voltage motor driving device that handles high voltage, a grid interconnection conversion device, a railway vehicle driving device, and the like.
１・・・直流電源 １ａ〜１ｆ・・・直流単電源
２・・・交流電動機（負荷） ３・・・３相インバータ回路
４、Ｑ１〜Ｑ１０、Ｑ１ａ〜Ｑ１ｄ、Ｑ４ａ〜Ｑ４ｃ、Ｑ６ａ〜Ｑ６ｄ・・・ＩＧＢＴ
Ｑ１１、Ｑ１２・・・逆阻止形ＩＧＢＴ ７・・・制御回路
Ｃ１〜Ｃ５・・・コンデンサ ９・・・フォトカプラ回路
１０、１１・・・絶縁トランス １３、１６、１７・・・スイッチ回路
ＲＤ・・・整流回路 Ｒｐ、Ｒｇ・・・抵抗 ５・・・ダイオード
６・・・ゲート駆動回路 ＧＰＳ・・・駆動回路電源
１２・・・光ファイバケーブル １４・・・電気−光変換器
１５・・・光−電気変換器 ＰＴＣ・・・トランス絶縁回路
ＰＣＣ・・・フォトカプラ絶縁回路
DESCRIPTION OF SYMBOLS 1 ... DC power source 1a-1f ... DC single power source 2 ... AC motor (load) 3 ... Three-phase inverter circuit 4, Q1-Q10, Q1a-Q1d, Q4a-Q4c, Q6a-Q6d. ..IGBT
Q11, Q12 ... Reverse blocking IGBT 7 ... Control circuit C1-C5 ... Capacitor 9 ... Photocoupler circuit 10, 11 ... Insulation transformer 13, 16, 17 ... Switch circuit RD / ..Rectifier circuit Rp, Rg ... Resistance 5 ... Diode 6 ... Gate drive circuit GPS ... Drive circuit power supply 12 ... Optical fiber cable 14 ... Electric-optical converter 15 ... Photoelectric converter PTC ・ ・ ・ Transformer insulation circuit PCC ・ ・ ・ Photocoupler insulation circuit
Claims (5)
前記駆動信号絶縁回路は、駆動信号を異電位間で絶縁して伝送し、絶縁トランスを用いた信号絶縁回路とフォトカプラを用いた信号絶縁回路とを直列接続して二重絶縁した直列絶縁回路にて構成され、
前記半導体スイッチ素子直列回路は、直流電源と並列に２ｎ（ｎは２以上の整数）個の半導体スイッチ素子が直列接続されており、
前記半導体スイッチ素子直列回路の中間点を中心に２Ｎ（Ｎは１〜ｎ−１までの整数）個のキャパシタが半導体スイッチ素子直列回路と並列に接続されており、
前記駆動信号絶縁回路は、前記半導体スイッチ素子の各々に適用されており、
前記いずれかのフライングキャパシタの中間電位点に、前記半導体スイッチ素子の各々に適用された前記絶縁トランスを用いた信号絶縁回路と前記フォトカプラを用いた信号絶縁回路とを直列接続した駆動信号絶縁回路の直列接続点が接続されていることを特徴とするフライングキャパシタ形電力変換装置。 A flying capacitor type power converter comprising a semiconductor switch element series circuit, a drive signal insulation circuit for controlling on / off of the semiconductor switch element, and a capacitor,
The drive signal isolation circuit is a series isolation circuit in which a drive signal is insulated and transmitted between different potentials, and a signal isolation circuit using an isolation transformer and a signal isolation circuit using a photocoupler are connected in series to double-insulate Composed of
In the semiconductor switch element series circuit, 2n (n is an integer of 2 or more) semiconductor switch elements are connected in series with a DC power supply,
2N (N is an integer from 1 to n-1) capacitors are connected in parallel with the semiconductor switch element series circuit, centering on the midpoint of the semiconductor switch element series circuit,
The drive signal isolation circuit is applied to each of the semiconductor switch elements,
A drive signal isolation circuit in which a signal isolation circuit using the isolation transformer applied to each of the semiconductor switch elements and a signal isolation circuit using the photocoupler are connected in series to an intermediate potential point of any of the flying capacitors A flying capacitor type power conversion device characterized in that a series connection point is connected.
前記駆動信号絶縁回路は、駆動信号を異電位間で絶縁して伝送し、絶縁トランスを用いた信号絶縁回路とフォトカプラを用いた信号絶縁回路とを直列接続して二重絶縁した直列絶縁回路にて構成され、
前記第１の半導体スイッチ素子直列回路は、直流電源と並列に２ｎ（ｎは２以上の整数）個の半導体スイッチ素子が直列接続されており、
前記第１の半導体スイッチ素子直列回路の中間点を中心に２Ｎ（Ｎは１〜ｎ−１までの整数）個のキャパシタが第１の半導体スイッチ素子直列回路と並列に接続されており、
前記第２の半導体スイッチ素子直列回路は、前記Ｎの最大値で決められたキャパシタと並列に複数の半導体素子が直列接続されており、
前記第２の半導体スイッチ素子直列回路の中間接続点と前記直流電源の中間電位点との間に双方向のスイッチングが可能な双方向スイッチを接続されており、
前記半導体スイッチ素子の各々に前記駆動信号絶縁回路が適用されており、
前記いずれかのフライングキャパシタの中間電位点に、前記半導体スイッチ素子の各々に適用された前記絶縁トランスを用いた信号絶縁回路と前記フォトカプラを用いた信号絶縁回路とを直列接続した駆動信号絶縁回路の直列接続点が接続されていることを特徴とするフライングキャパシタ形電力変換装置。 A flying capacitor type power converter comprising a first semiconductor switch element series circuit, a second semiconductor switch element series circuit, a drive signal insulation circuit for controlling on / off of the semiconductor switch element, and a capacitor,
The drive signal isolation circuit is a series isolation circuit in which a drive signal is insulated and transmitted between different potentials, and a signal isolation circuit using an isolation transformer and a signal isolation circuit using a photocoupler are connected in series to double-insulate Composed of
In the first semiconductor switch element series circuit, 2n (n is an integer of 2 or more) semiconductor switch elements are connected in series with the DC power supply,
2N (N is an integer from 1 to n-1) capacitors are connected in parallel with the first semiconductor switch element series circuit, centering on an intermediate point of the first semiconductor switch element series circuit,
In the second semiconductor switch element series circuit, a plurality of semiconductor elements are connected in series with a capacitor determined by the maximum value of N,
A bidirectional switch capable of bidirectional switching is connected between an intermediate connection point of the second semiconductor switch element series circuit and an intermediate potential point of the DC power supply;
The drive signal isolation circuit is applied to each of the semiconductor switch elements,
A drive signal isolation circuit in which a signal isolation circuit using the isolation transformer applied to each of the semiconductor switch elements and a signal isolation circuit using the photocoupler are connected in series to an intermediate potential point of any of the flying capacitors A flying capacitor type power conversion device characterized in that a series connection point is connected.
5. The flying capacitor type power converter according to claim 3 , wherein the drive signal isolation circuit is a series connection point in which the signal isolation circuit using the isolation transformer and the signal isolation circuit using the photocoupler are connected in series. Is connected to an intermediate potential point between the reference potential and the emitter potential of the semiconductor switch element driven through the series insulating circuit.
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