JP2015198212A - glass interposer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a glass interposer 1 improved in a heat dissipation effect in order to solve such a problem that a glass interposer is deteriorated in thermal conductivity while a base material itself is an insulation layer material and an interposer excellent in electrical characteristics is expected.SOLUTION: A glass interposer 1 includes a glass base material 4 including a plurality of through electrodes 5 provided therein and a plurality of insulation layers 2 and wiring layers 3 laminated on an upper part 6 and a lower part 7 of the glass base material 4. A through electrode diameter of the through electrodes 5 on a chip connection side is made larger than a through electrode diameter on a substrate connection side.

Description

  The present invention relates to a glass interposer with a through electrode, and more particularly to a glass interposer that improves heat dissipation performance.

  As an interposer for mounting a semiconductor element, in addition to a conventional organic interposer, an interposer using silicon as a base material has appeared in the world for the high end.

  A silicon interposer using silicon as a base material can form fine wiring. Silicon is an interposer with high thermal conductivity and excellent heat dissipation performance.

  However, silicon is expensive compared to resin and glass, and silicon is a semiconductor and conductive, so an insulating layer must be interposed between the through electrode and the silicon substrate. Will happen.

JP2013-207006A

  On the other hand, in a glass interposer using glass as a base material, the base material itself is an insulating layer material, and the above-described problems do not occur, and an interposer having excellent electrical characteristics is expected. However, there is a problem that the thermal conductivity of the substrate is inferior to that of silicon.

  An object of the present invention is to provide a glass interposer with an improved heat dissipation effect in order to solve the above problems.

This invention is made | formed in view of this subject, The invention of Claim 1 is
A glass interposer comprising a glass substrate provided with a plurality of through electrodes, and a plurality of insulating layers and wiring layers laminated on the top and bottom of the glass substrate,
The glass interposer is characterized in that the through electrode diameter on the chip connection side of the through electrode is larger than the through electrode diameter on the substrate connection side.

  The first through electrode may be formed of any one of Cu, Ag, Au, Ni, Pt, Pd, Ru, Fe, and a compound containing at least one of these metals.

  According to the glass interposer with an inclined through electrode of the present invention, the heat dissipation performance can be improved by increasing the diameter of the through electrode on the chip connection side.

  Generally, the thermal conductivity of the through electrode is higher than that of the glass substrate (for example, the thermal conductivity of Cu is 398 (W / mK), and the thermal conductivity of glass is 1 (W / mK)). By taking a large through-electrode diameter on the chip connection side, a region with high thermal conductivity is expanded and the thermal conductivity is increased. Since the heat generated by the chip is the main heat source, if the thermal conductivity of the layer on the chip connection side is high, the heat of the chip is easily diffused, and the heat dissipation performance can be improved.

It is explanatory drawing which showed the structure of one Embodiment of the glass interposer of this invention in the cross section. It is explanatory drawing which showed the structure of other embodiment of the glass interposer of this invention in the cross section. It is explanatory drawing which showed the structure of the Example of the glass interposer of this invention by the perspective view. It is explanatory drawing which expanded and showed a part of structure of the Example of the glass interposer of this invention in the cross section.

An embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is an explanatory view showing the structure of an embodiment of the glass interposer 1 of the present invention in cross section. The insulating layer 2 and the conductor layer 3 are laminated on the upper and lower sides of the glass substrate 4.

  In FIG. 1, the insulating layers 2 and the conductor layers 3 are alternately laminated in three layers on both the upper and lower sides. However, the total number and the upper and lower layers are not necessarily symmetrical, and this is an embodiment.

The through electrode 5 is formed by filling an electrode layer made of a conductive substance into a through hole formed so as to penetrate the glass substrate 4 in the thickness direction.
As a main material of the electrode layer, it is preferable to use any one of Cu, Ag, Au, Ni, Pt, Pd, Ru, Fe, or a compound containing at least one of these metals. Of these, Cu is particularly excellent in terms of both electrical characteristics and cost.

  The diameter of the through electrode 5 is designed so that the side on which the memory, logic chip and the like are stacked is larger than the side on which the PCB is in contact with the PCB side. The 6 side is preferably 1.5 to 2.5 times as large as the 7 side.

  FIG. 2 is an explanatory view showing in cross section the configuration of another embodiment of the glass interposer of the present invention. In FIG. 1, the through electrode 5 has a truncated cone shape, but may have a shape in which cylinders having different diameters are combined as shown in FIG. 2. However, the diameter of the chip side 6 needs to be larger than the diameter of the substrate side 7.

  As a method for creating a through hole of the through electrode 5, there are a method using dielectric breakdown due to electric discharge and a hole drilling with a laser, and the like is not limited to a specific method.

  As a method for creating an electrode layer in a through hole, a generation method by plating is a powerful method, but the method is not limited to that method.

  The insulating layer 2 above and below the glass substrate 4 includes a plating method, a thermal oxidation method, a CVD method, a sol-gel method, and the like, and the method is not particularly limited.

  The lamination method of the conductor layer 3 includes a semi-ad method, a gas phase method, a dipping method, a coating method, and the like, and the method is not particularly limited.

Examples of the present invention are shown below.
FIG. 3 is an explanatory view showing a configuration of an embodiment of the glass interposer of the present invention in a perspective view. In order to verify the effect of the present invention, an example of a glass interposer according to the present invention is shown as a printed wiring board (PCB 8 in the figure), which is simulated to confirm heat dissipation. A glass interposer 1 is connected on a JEDEC standard PCB 8, and a memory 9 and a logic chip 10 are mounted on the glass interposer 1. The dimensions of each component are as shown in Table 1 below. In addition, the memory 9 / logic chip 10 and the glass interposer 1 are connected by solder, have the dimensions of the upper connection, and the space is filled with resin. The PCB 8 and the glass interposer 1 are also connected by soldering and have the dimensions of the bottom connection. This space is not filled.

FIG. 4 is an explanatory view showing a part of the configuration of the embodiment of the glass interposer of the present invention in an enlarged cross-sectional view. The glass substrate 4 has a thickness of 300 μm, and the insulating layer 2 and the conductor layer 3 each have a thickness of 8 μm.

  The thermophysical properties of each component are as shown in Table 2 below. Thermal conductivity and specific heat are physical properties considering temperature dependence. The thermal conductivity of PCB 8 has anisotropy in the plane and in the thickness direction, and has the values shown in Table 3.

As a heat source, the memory 9 and the logic chip 10 were set as shown in Table 4.

Under the above conditions, using commercially available thermal fluid analysis software (FloEFD), the temperatures of the memory and the logic chip were obtained, and the heat dissipation was evaluated.

  As an example, 3 × 3 penetration electrodes 5 were set at equal intervals, the diameter on the chip side 6 was 4 mm, and the diameter on the substrate side 7 was 3 mm.

Under these conditions, the average temperature of the memory was 33.79 ° C., and the average temperature of the logic chip was 34.02 ° C.
<Comparative Example 1>
As Comparative Example 1, first, a configuration without the through electrode 5 was examined.

Under these conditions, the average temperature of the memory was 33.84 ° C., and the average temperature of the logic chip was 34.08 ° C. In the example, since the temperature is lowered, the heat dissipation is improved. <Comparative Example 2>
As Comparative Example 2, the configuration of only through holes was examined.

Under these conditions, the average temperature of the memory was 34.00 ° C., and the average temperature of the logic chip was 34.24 ° C. In the example, since the temperature is lowered, the heat dissipation is improved. <Comparative Example 3>
As Comparative Example 3, the configuration of a cylindrical through electrode 5 having a diameter of 3 mm was examined.

Under these conditions, the average temperature of the memory was 33.80 ° C., and the average temperature of the logic chip was 34.03 ° C. In the example, since the temperature is lowered, the heat dissipation is improved. <Comparative Example 4>
As Comparative Example 4, the configuration of the through electrode 5 having a diameter of 7 mm on the 7 side and a diameter of 3 mm on the 6 side was examined.

Under this condition, the average temperature of the memory is 33.82 ° C. and the average temperature of the logic chip is 34
. It became 05 degreeC. In the example, since the temperature is lowered, the heat dissipation is improved.

  Table 5 summarizes the memory temperature and logic chip temperature under all study conditions. As a result, it can be seen that the heat dissipation is improved by the present invention inclined so that the diameter on the 6 side increases.

  The above-described invention can be used for an interposer for high-functional electronic devices such as three-dimensional mounting.

DESCRIPTION OF SYMBOLS 1 ... Glass interposer 2 ... Insulating layer 3 ... Conductor layer 4 ... Glass substrate 5 ... Through electrode 6 ... Chip side 7 ... (PCB) Substrate side 8 ... PCB
9 ... Memory 10 ... Logic chip

Claims (1)

A glass interposer comprising a glass substrate provided with a plurality of through electrodes, and a plurality of insulating layers and wiring layers laminated on the top and bottom of the glass substrate,
A glass interposer characterized in that the through electrode diameter on the chip connection side of the through electrode is larger than the through electrode diameter on the substrate connection side.