JP2006174566A - Current control element, booster and inverter device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a current control element easy in assembling a power control circuit, such as a booster circuit and an inverter circuit, and to provide a booster equipped with the current control element and an inverter device. <P>SOLUTION: The control element 100 includes an electrode P that applies a positive-side voltage; an electrode N that applies a negative-side voltage; control electrodes G1, G2 that input current controlling control signals; a substrate B, on which a diode element D1 and an IGBT element T1 are mounted on one main surface, and a diode element D2 and an IGBT element T2 are mounted on the other main surface; and an output electrode M. The current control element 100 is formed, by winding in the IGBT elements T1, T2 and the diode elements D1, D2 into a film capacitor, and the diode elements D1, D2 and the IGBT elements T1, T2 are coated so as to be non-contactable with the outside as one body integrated with the capacitor. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a current control element, a booster device, and an inverter device, and more particularly to a current control element integrated with a capacitor, a booster device including the current control element, and an inverter device.

  In recent years, vehicles such as electric vehicles, hybrid vehicles, and fuel cell vehicles that employ an AC motor as a drive source for vehicle propulsion and are equipped with an inverter device that drives the AC motor have appeared.

  In such automobiles, downsizing of a driving device that drives an AC motor with an inverter device is required. Such an inverter device is generally composed of a switching element such as an IGBT (insulated gate bipolar transistor) and a rectifying diode element.

Japanese Patent Laid-Open No. 11-18429 (Patent Document 1) discloses a control module mounted on one cooling heat sink in order to directly cool the IGBT chip and the electrolytic capacitor chip.
Japanese Patent Laid-Open No. 11-18429 Japanese Patent Laid-Open No. 11-103577 JP 2003-33044 A Japanese Utility Model Publication No. 6-38228

  For example, in a hybrid vehicle, cost and space restrictions are large, and if a single IGBT element or capacitor element is used in combination, there are difficulties in cost and space.

  In the technique disclosed in Japanese Patent Laid-Open No. 11-18429 (Patent Document 1), a capacitor is retrofitted to a power element such as an IGBT, or a capacitor element is built in a power module. That is, conventionally, a power element and a single capacitor are used in combination, or a capacitor element is merely incorporated in a power module. For this reason, there is a problem that the number of parts is large, assembly costs are high, and the size of the power module is large.

  Further, for example, in a hybrid vehicle, further improvement in fuel efficiency is required, and it is essential to reduce switching loss. However, in order to reduce switching loss, it is necessary to perform switching at a higher speed than in the past. However, if high-speed switching is performed, the surge voltage generated at both ends of the IGBT element increases, and it is necessary to additionally incorporate a snubber circuit. was there.

  The snubber circuit is a circuit for preventing a high spike voltage generated in a switching transient state in a switching circuit for turning on / off a current flow. The spike voltage is generated by the inductance of the wiring in the current flow path, and is particularly large when the switch is turned off.

  An object of the present invention is to provide a current control element in which a power control circuit such as a booster circuit and an inverter circuit can be easily assembled, and a booster and an inverter device including the current control element.

  In summary, the present invention is a current control element, which is a first electrode that can be contacted from the outside, a second electrode that can be contacted from the outside, a first control electrode that can be contacted from the outside, A capacitor portion connected between the second electrodes, and a path through which a current flows from the first electrode to the second electrode; And a first semiconductor element that performs current control according to a signal given from the electrode.

  Preferably, the current control element is connected in parallel with the first semiconductor element with a direction in which a current flows from the second electrode to the first electrode as a forward direction, and is integrated with the capacitor unit and the first semiconductor element from the outside. It further includes a first diode element that is coated so as not to be contacted.

  Preferably, the current control element is provided in series with the first semiconductor element on a path through which a current flows from the first electrode to the second electrode, the second control electrode accessible from the outside, and the capacitor unit and A second semiconductor element which is integrally coated with the first semiconductor element so as to be inaccessible from the outside and performs current control in accordance with a signal applied from the second control electrode; and the first semiconductor element and the second semiconductor And an output electrode provided at a connection node with the element.

  More preferably, the current control element is connected in parallel to each of the first and second semiconductor elements, with the direction in which the current flows from the second electrode to the first electrode as a forward direction, and the capacitor unit and the first and second The semiconductor device further includes first and second diode elements which are integrally covered with the semiconductor element and are coated so as not to be contacted from the outside.

  More preferably, in the current control element, the first semiconductor element and the first diode element are arranged on the first main surface, and the second semiconductor element and the second diode element are arranged on the second main surface. And a substrate to be processed.

  More preferably, the capacitor portion is laminated on the first insulating film, the first conductive layer formed on the first insulating film and electrically connected to the first electrode, and the first insulating film. A second insulating film, and a second conductive layer formed on the second insulating film and electrically connected to the second electrode. The substrate is disposed between the first and second insulating films.

  Preferably, the capacitor portion is laminated on the first insulating film, the first conductive layer formed on the first insulating film and electrically connected to the first electrode, and the first insulating film. A second insulating film; and a second conductive layer formed on the second insulating film and electrically connected to the second electrode.

  More preferably, the first semiconductor element is disposed between the laminated first and second insulating films.

  More preferably, the first and second insulating films are laminated and wound, and the first semiconductor element is wound and disposed between the first and second insulating films.

  More preferably, the capacitor portion is formed on a surface opposite to the surface on which the first conductive layer on the first insulating film is formed, and is electrically connected to the first electrode. A conductive layer is further included. The first semiconductor element includes a control terminal electrically connected to the first control electrode, and first and second main electrodes through which a main current flows. The first main electrode is in contact with the third conductive layer.

  A booster according to another aspect of the present invention includes any one of the current control elements described above.

  An inverter device according to still another aspect of the present invention includes any one of the current control elements described above and performs motor control.

  According to the present invention, a power control circuit such as a booster circuit and an inverter can be configured in a compact manner, and the power control circuit can be easily assembled and space can be saved.

  Further, it becomes possible to realize a boost converter and an inverter that can be switched at high speed and have a high rated voltage.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

  FIG. 1 is a perspective view showing the shape of a current control element 100 of the present invention.

  Referring to FIG. 1, current control element 100 includes an electrode P for applying a positive voltage, an electrode N for applying a negative voltage, and control electrodes G1 and G2 for inputting a control signal for current control. In addition, a substrate B on which the diode element D1 and the IGBT element T1 are mounted on one main surface and the diode element D2 and the IGBT element T2 are mounted on the other main surface, and an output electrode M are included.

  The current control element 100 is formed by winding IGBT elements T1 and T2 and diode elements D1 and D2 in a film capacitor, and the diode elements D1 and D2 and the IGBT elements T1 and T2 are in contact with the capacitor unit from the outside. Covered impossible. In addition, in order to improve moisture resistance, you may give a resin mold etc. further.

  FIG. 2 is an equivalent circuit diagram of the current control element 100 shown in FIG.

  Referring to FIG. 2, IGBT element T1 has a collector connected to electrode P to which a positive power supply potential is coupled, an emitter connected to output electrode M, and a gate connected to control electrode G1. IGBT element T2 has a collector connected to output electrode M, an emitter connected to electrode N to which a negative power supply potential is coupled, and a gate connected to control electrode G2.

  The diode element D1 is connected in parallel with the IGBT element T1 on a path through which a current flows from the electrode P to the electrode N, and is arranged so that the direction from the electrode N to the electrode P is the forward direction. The diode element D2 is connected in parallel with the IGBT element T2 on the path through which a current flows from the electrode P to the electrode N, and is arranged so that the direction from the electrode N to the electrode P is the forward direction. The capacitor C1 is connected between the electrode P and the electrode N.

  FIG. 3 is a front view of the current control element 100 shown in FIG.

  4 is a cross-sectional view taken along line IV-IV in FIG.

  Referring to FIGS. 3 and 4, an insulating film FN such as polyethylene terephthalate (PET) or polypropylene (PP) having a vapor deposited metal layer EN such as aluminum formed on one side and a vapor deposited metal layer EP such as aluminum on one side. The formed insulating film FP such as polyPET or PP is overlapped and wound, and the cross section appears to be alternately stacked with the insulating films FP and the insulating films FN.

  The deposited metal layer EN is provided on the insulating film FN, and the deposited metal layer EP is provided on the insulating film FP.

  After the insulating film is wound, a metal called metallicon is sprayed on both end faces to form electrode terminals TN and TP. As can be seen from FIG. 4, on the insulating film FN, on the right side of the drawing, a margin portion where the vapor deposition metal layer EN is not provided is provided, and the vapor deposition metal layer EN is insulated from the electrode terminal TP. Further, on the insulating film FP, a margin portion where the vapor deposition metal layer EP is not provided is provided on the left side of the drawing, and the vapor deposition metal layer EP is insulated from the electrode terminal TP.

  A substrate B on which both the diode element and the IGBT element are mounted is sandwiched between the insulating film FN and the insulating film FP at the outer peripheral portion of the winding of the insulating film (lower part in FIG. 4). As will be described later, a vapor-deposited metal layer EP is provided on one surface and a vapor-deposited metal layer EP2 is provided on the opposite surface of a predetermined portion of the outer periphery of the insulating film FP. In addition, metal layers E1 are formed on both surfaces of the substrate B. In addition, you may change the board | substrate B and the metal layer E1 into a conductive metal plate.

  On the upper surface of the substrate B, the diode element D1 and the IGBT element T1 are disposed on the metal layer E1. On the other hand, a diode element D2 and an IGBT element T2 are disposed on the lower surface of the substrate B below the metal layer E1. Insulating layers K1 and K2 are provided so that portions of the metal layer E1 protruding from the diode elements D1, D2 and IGBT elements T1 and T2 do not contact the metal layer EN and the metal layer EP2. The insulating layers K1 and K2 may be insulating films or insulating coatings.

  FIG. 5 is a diagram for explaining in more detail the substrate B on which the diode element and the IGBT element are mounted.

  In FIG. 5, for the convenience of explanation, the substrate B and the insulating films FP and FN disposed above and below the substrate B are disposed apart from each other, but actually, as shown in FIG. 4, the diode elements D1 and IGBT are disposed. The element T1 is in contact with the vapor deposition metal layer EP2, and the diode element D2 and the IGBT element T2 are in contact with the vapor deposition metal layer EN.

  The correspondence between the equivalent circuit diagram of FIG. 2 and the cross-sectional view of FIG. 4 will be described with reference to FIG. The deposited metal layer EP2 formed on the insulating film FP corresponds to the electrode P in FIG. The deposited metal layer EN formed on the insulating film FN corresponds to the electrode N in FIG. The metal layers E1 formed on both surfaces of the substrate B correspond to the electrodes M in FIG.

  The anode surface of the diode element D1 is in contact with the metal layer E1. The cathode surface of the diode element D1 is in contact with the vapor deposition metal layer EP2. The emitter surface of the chip of the IGBT element T1 is in contact with the metal layer E1. The collector surface of the IGBT element T1 is in contact with the vapor deposition metal layer EP2.

  The anode surface of the diode element D2 is in contact with the deposited metal layer EN. The cathode surface of the diode element D1 is in contact with the metal layer E1. The emitter surface of the chip of the IGBT element T2 is in contact with the deposited metal layer EN. The collector surface of the IGBT element T2 is in contact with the metal layer E1.

  With such an arrangement, a switching element and a rectifying element are incorporated between both electrodes of the capacitor C1 in FIG. Since the capacitor is arranged in the immediate vicinity of the switching element and the rectifying element, the capacitor can be used as a snubber circuit.

  FIG. 6 is a diagram for explaining a method of manufacturing the current control element of the present invention.

  Referring to FIG. 6, insulating films FN and FP are wound and substrate B is disposed on the outer periphery. The insulating film FP has a vapor-deposited metal layer EP deposited on one surface, and a vapor-deposited metal layer EP2 provided on the other surface in contact with the cathode electrode portion of the diode element D2 and the emitter electrode portion of the IGBT element T2. It has been. Although not shown, the deposited metal layer EP2 has a shape cut out so as not to contact the gate electrode portion of the IGBT element T2.

  An insulating coated electric wire L2 is soldered to the gate of the IGBT element T2. This L2 corresponds to the control electrode G2. On the opposite surface of the substrate B, diode elements D1 and IGBT elements T1 (not shown) are arranged and similarly connected to the vapor deposition metal layer EN. Further, the insulated wire L1 is soldered to the gate of the IGBT element T1. The electric wire L1 corresponds to the control electrode G1.

  In this manner, the insulating film is overlapped and wound, and then the metallicon is sprayed on both end faces, and the electrodes N and P are soldered as shown in FIG. Thereafter, in order to improve moisture resistance and earthquake resistance, molding or dipping may be performed with a water resistant resin or the like. If the current control element 100 is molded, it is possible to cool the current control element 100 by directly immersing it in the cooling water when cooling is necessary.

  Although FIG. 6 shows a case where the substrate B is sandwiched in the last part of the film winding of the film capacitor, the film may be wound with the substrate B sandwiched in the first part of the winding.

  Moreover, although the example of the wound film capacitor was shown, you may pinch | interpose the board | substrate B in a laminated | stacked film capacitor.

[Modification]
FIG. 7 is a diagram for explaining a modification of the current control element.

  As shown in FIG. 7, the current control element 300 is provided with a cavity serving as a cooling water passage at the center.

  When the insulating film is wound, the current control element including the IGBT element, the diode element, and the capacitor may be cooled by molding the inside as a cavity and flowing cooling water through the cavity. Even if not molded, if the inside is a cavity, a metal tube through which cooling water has passed can be passed through the cavity and cooled from the inside.

  In the case shown in FIG. 6, the IGBT element and the diode element are provided in the portion near the outer peripheral portion. However, in the case shown in FIG. 7, it is more effective to arrange the IGBT element or the like in the inner portion near the cooling water passage. is there.

[Application example]
FIG. 8 is a diagram showing an example of a motor drive circuit to which the current control element of the present invention is applied.

  Referring to FIG. 8, motor drive circuit 200 drives battery MATT, boost converter 202 that boosts the voltage of battery BATT, and the voltage boosted by boost converter 202 into a three-phase alternating current. Inverter 204.

  Boost converter 202 has a reactor L connected to the positive electrode of battery BATT, output electrode M shown in FIG. 2 connected to reactor L, electrode P in FIG. 2 connected to power line LP, and a negative electrode of battery BATT. 2 includes a current control element 206 having the electrode N of FIG. 2 connected to the power supply line LN.

  The inverter 204 includes a current control element 208 in which the electrode P in FIG. 2 is connected to the power line LP, the electrode N in FIG. 2 is connected to the power line LN, and the output electrode M in FIG. 2 is connected to the line LP, the electrode N of FIG. 2 is connected to the power supply line LN, the output electrode M of FIG. 2 is connected to the wiring LV, and the power supply line LP is connected to FIG. 2 is connected, the electrode N of FIG. 2 is connected to the power supply line LN, and the current control element 212 to which the output electrode M of FIG. 2 is connected to the wiring LW. Wiring LU is connected to the U-phase coil of motor M1, wiring LV is connected to the V-phase coil, and wiring LW is connected to the W-phase coil.

  According to the present invention, the boost converter 202 can be composed of two elements, a reactor L and a current control element 206. Further, the inverter 204 can be constituted by three elements of current control elements 208, 210 and 212.

  In each current control element, since a film capacitor is disposed in the immediate vicinity of the IGBT element, this capacitor can be used as a snubber circuit for absorbing a surge voltage during high-speed switching.

  Conventionally, in a motor drive system of a hybrid vehicle, an aluminum electrolytic capacitor has been used as a smoothing capacitor. However, it is necessary to increase the rated voltage, and studies are underway to change the smoothing capacitor to a film capacitor. This film capacitor can also be used as a snubber circuit. Therefore, when a smoothing capacitor is realized by using the current control element of the present invention, a smoothing capacitor having a high withstand voltage can be realized, and a snubber circuit capacitor can also be used.

  Therefore, it is possible to realize a boost converter or an inverter that can be switched at high speed by reducing switching loss and that has a large rated voltage by using a film capacitor.

  Further, according to the present invention, the configuration of the booster circuit and the inverter can be made compact and space saving can be achieved as compared with the conventional retrofitting of a capacitor or the incorporation of a capacitor in a power module. In particular, it is effective when the in-vehicle space becomes a problem like a car.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is the perspective view which showed the shape of the current control element 100 of this invention. FIG. 2 is an equivalent circuit diagram of the current control element 100 shown in FIG. 1. It is a front view of the current control element 100 shown in FIG. It is sectional drawing in IV-IV in FIG. It is a figure for demonstrating in detail about the board | substrate B with which a diode element and an IGBT element are mounted. It is a figure for demonstrating the manufacturing method of the current control element of this invention. It is a figure for demonstrating the modification of a current control element. It is the figure which showed an example of the motor drive circuit to which the current control element of this invention is applied.

Explanation of symbols

  100 current control element, 200 motor drive circuit, 202 step-up converter, 204 inverter, 206, 208, 210, 212, 300 current control element, BATT battery, B substrate, C1 capacitor, D1, D2 diode element, E1 metal layer, EN , EP, EP2 Evaporated metal layer, FN, FP insulating film, G1, G2 control electrode, K1, K2 insulating layer, L reactor, L1, L2 electric wire, LN, LP power line, LU, LV, LW wiring, M output electrode , M1 motor, N, P electrodes, T1, T2 IGBT elements, TN, TP electrode terminals.

Claims (12)

A first electrode accessible from the outside;
A second electrode accessible from the outside;
A first control electrode accessible from the outside;
A capacitor portion connected between the first and second electrodes;
Provided on a path through which a current flows from the first electrode to the second electrode, and is covered with the capacitor unit so as not to be externally contactable, and a current corresponding to a signal given from the first control electrode A current control element comprising: a first semiconductor element that performs control.   A direction in which current flows from the second electrode to the first electrode is a forward direction, and is connected in parallel with the first semiconductor element, and cannot be externally contacted integrally with the capacitor unit and the first semiconductor element. The current control element according to claim 1, further comprising a first diode element coated on the element. A second control electrode accessible from the outside;
Provided in series with the first semiconductor element on a path through which a current flows from the first electrode to the second electrode, and is integrally covered with the capacitor unit and the first semiconductor element so as to be inaccessible from the outside. A second semiconductor element that performs current control in response to a signal given from the second control electrode;
The current control element according to claim 1, further comprising an output electrode provided at a connection node between the first semiconductor element and the second semiconductor element.   A direction in which a current flows from the second electrode to the first electrode is a forward direction, and is connected in parallel to the first and second semiconductor elements, respectively, and the capacitor portion and the first and second semiconductor elements The current control element according to claim 3, further comprising first and second diode elements that are integrally covered so as to be inaccessible from the outside.   A substrate on which the first semiconductor element and the first diode element are arranged on a first main surface, and the second semiconductor element and the second diode element are arranged on a second main surface; The current control element according to claim 4 provided. The capacitor section is
A first insulating film;
A first conductive layer formed on the first insulating film and electrically connected to the first electrode;
A second insulating film laminated to the first insulating film;
A second conductive layer formed on the second insulating film and electrically connected to the second electrode;
The current control element according to claim 5, wherein the substrate is disposed between the first and second insulating films. The capacitor section is
A first insulating film;
A first conductive layer formed on the first insulating film and electrically connected to the first electrode;
A second insulating film laminated to the first insulating film;
The current control element according to claim 1, further comprising a second conductive layer formed on the second insulating film and electrically connected to the second electrode.   The current control element according to claim 7, wherein the first semiconductor element is disposed between the laminated first and second insulating films. The first and second insulating films are laminated and wound,
The current control element according to claim 7, wherein the first semiconductor element is wound and disposed between the first and second insulating films. The capacitor section is
A third conductive layer that is partially formed on a surface of the first insulating film opposite to the surface on which the first conductive layer is formed and is electrically connected to the first electrode; ,
The first semiconductor element is:
A control terminal electrically connected to the first control electrode;
Including first and second main electrodes through which a main current flows,
The current control element according to claim 8, wherein the first main electrode is in contact with the third conductive layer.   A booster comprising the current control element according to claim 1.   An inverter device comprising the current control element according to claim 1 and performing motor control.

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