JP2003224234A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor device which is capable of increasing the number of I/Os of an insulating board where a semiconductor element that is improved in heat dissipation properties and mounted through a wire bonding method, can be reduced in thickness and size, and improved in reliability. <P>SOLUTION: A semiconductor device is equipped with a first bonding wire 4 connected between an electrode provided on the periphery of the top surface of a semiconductor element 3 and an electrode pad around a semiconductor element 3 on the top surface of an insulating board 2, a sealing resin layer 6 covering the semiconductor element 3 and the first bonding wire 4, and a metal plate 7 which is arranged over the semiconductor element 3 and provided with an underside that is buried in the upper part of the sealing resin layer 6 and an exposed top surface. The metal plate 7 is equipped with a projection which is located at the center of the underside of the plate 7 and provided with an underside that is adjacent and opposite to the center of the top surface of the semiconductor element 3, and the underside of an overhang of the metal plate 7 is higher than the apex of the first bonding wire 4 and supported by a plurality of second bonding wires 5 which are nearly as high as the first bonding wire 4 and connected to the electrode and/or the electrode pad. <P>COPYRIGHT: (C)2003,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a metal plate for heat radiation.
Equipped with highly integrated semiconductor elements
And a resin-sealed semiconductor device. [0002] 2. Description of the Related Art In recent years, semiconductor devices such as ICs and LSIs have been mounted.
In the semiconductor devices to be mounted, semiconductor elements have become highly integrated.
Requires higher density mounting and smaller size.
Is coming. Also, with the increasing integration of semiconductor devices,
The amount of heat generated during operation is increasing. For example, optical communication
High frequency used in fields such as microwave communication and millimeter wave communication
The semiconductor device that operates by the wave signal, MPU (Micro Processi
ng Unit) semiconductors that perform high-speed arithmetic processing
Element and power semiconductor for high current switching
In the case of body elements, the amount of heat generated during operation is extremely large.
You. As a result, the temperature range in which the semiconductor device operates normally
The problem that the temperature rises above the upper limit of about 100 ° C
There was a point. Also, a semiconductor device and an insulating substrate for mounting the same are provided.
Due to the difference in thermal expansion between the plate and the
The joints peel off due to force or cracks in the insulating substrate
Occurs and the reliability of the semiconductor device cannot be maintained.
There were also problems. In particular, semiconductor devices that operate with high-frequency signals
Among them, not only those made of silicon but also Ga
There are many compound semiconductors made of As, InP, etc.
These semiconductor elements are generally made of silicon
Number of I / Os compared to elements (Inputs / Outputs: input / output end
The number of semiconductor elements) and the size of the semiconductor element
Therefore, stress due to local thermal stress is likely to occur. So
Therefore, the heat dissipation of the semiconductor device is improved, and the semiconductor element is
It was necessary to efficiently radiate the heat and cool it. [0004] Therefore, semiconductor devices with improved heat radiation characteristics have been developed.
Is provided with various heat sinks with good thermal conductivity.
Are known. For example, in the semiconductor device 401 shown in FIG.
The semiconductor element 403 is mounted on the lower surface of the metal plate 407.
The semiconductor element 403 is inserted into the through hole of the insulating substrate 402
Thus, the periphery of the semiconductor element 403 on the lower surface of the metal plate 407 is
It is bonded to the upper surface of the insulating substrate 402. Semiconductor element 403
The electrodes of the insulating substrate 402 are electrically connected by the bonding wires 404.
It is pneumatically connected. The semiconductor element 403 is sealed
It is covered and protected by resin 406. Of the insulating substrate 402
On the underside, metal ends for connecting to external electric circuit boards, etc.
A child (conductor bump) 408 is formed. This semiconductor device
In the device 401, the heat of the mounted semiconductor element 403 is
7 through the back of the semiconductor element 403 (the top in FIG. 4).
Heat is radiated to the outside and cooled. In the semiconductor device 501 shown in FIG.
The conductive element 503 is mounted on the insulating substrate 502 and
Electrical connection with the lead terminal 508 by the
Has been continued. Also, in order to protect the semiconductor element 503,
It is molded and sealed by a sealing resin 506. semiconductor
A recess is provided on the upper surface of the sealing resin 506 above the element 503.
The metal plate 507 is bonded to the depression. Semiconductor element
The heat of the child 503 is radiated to the outside from the exposed surface of the metal plate 507 and cooled.
Is done. In these conventional semiconductor devices 401 and 501,
The metal plates 407 and 507 also function as heat sinks,
The structure is effective for reduction. [0007] However, FIG.
In the semiconductor device 401, the sealing tree on the lower surface of the insulating substrate 402
A metal terminal 408 can be provided in the area where the grease 406 exists.
I can't. At present, the number of I / Os is increasing due to higher integration of semiconductor devices.
It is increasing. Also, if you want to reduce the mounting area
Package for semiconductor device storage (hereinafter referred to as semiconductor
Package) also tends to be smaller. That is,
As many metal terminals 408 as possible on the underside of the small insulating substrate 402
If a metal end is to be provided,
Although it is desirable to provide a child 408, in the semiconductor device 401,
Metal terminals 408 can be provided on the entire lower surface of the insulating substrate 402.
I can't. Therefore, the number of I / Os cannot be increased.
No. Also, as the number of I / Os increases, semiconductor packages also
growing. As a result, the semiconductor device 401 itself becomes larger.
And the demand for miniaturization cannot be satisfied.
Was. In the semiconductor device 501 shown in FIG.
At the time of its manufacture, an insulating substrate 502 on which a semiconductor element 503 is mounted
To seal one end of the lead terminal 508 with resin,
The insulating substrate 502 and the lead terminals 508 are fixed with a mold with a gap between them.
Then, the resin is sealed by injecting a sealing resin. So
Therefore, the gap between the die and the bonding wire 504 is narrow.
It became difficult to uniformly fill the sealing resin
Or the bonding wire 504 is exposed after manufacturing
There was fear. Other molds and bonding wires 504
Is small, the flow rate of the injected sealing resin is
Faster, bonding wire 504 falls down and touches each other
And a short circuit occurs. As a result, semiconductor
The high frequency signal input / output to / from the element 503 cannot be transmitted accurately.
Or close the semiconductor element 503 and the metal plate 507
Not be able to obtain a satisfactory heat dissipation effect.
There was a problem. Accordingly, the present invention has been made to solve the above problems.
It is completed and its purpose is to
Wire bonding mounting of semiconductor elements using wire
While increasing the number of I / Os on the insulating substrate,
Thin and compact, and heat dissipation of semiconductor elements
-Encapsulated semiconductor device with excellent reliability and high reliability
Is to provide. [0010] According to the present invention, there is provided a semiconductor device comprising:
A semiconductor element mounted on an upper main surface of an insulating substrate;
Electrodes formed on the outer peripheral portion of the upper surface of the body element and the upper side
An electrode pad formed around the semiconductor element on the main surface;
An electrically connected first bonding wire;
The conductor element and the first bonding wire are covered.
And a sealing resin layer provided above the semiconductor element.
And the lower surface is buried in the upper part of the sealing resin layer.
And a metal plate having an exposed upper surface.
The metal plate has an upper surface of the semiconductor element at the center of the lower surface.
A convex portion having a lower surface that is close to and opposed to the center of the projection is formed.
And the outer periphery of the lower surface is
Higher than and approximately the same height as
Contact with the electrode and / or the electrode pad
Supported by a plurality of continuous second bonding wires
It is characterized by having. The present invention is arranged above a semiconductor element.
At the same time, the lower surface is embedded in the upper part of the sealing resin layer, and the upper surface is exposed.
The protruding metal plate is larger than the first bonding wire
A plurality of second bondings having a high height and substantially the same height
Since the metal plate is supported by the wire,
No short circuit due to contact with the grounding wire and semiconductive metal plate
It can be located very close to the body element. The result
As a result, the semiconductor element is warped using existing bonding wires.
While using ear bonding
Heat of the semiconductor element is transferred from the bonding surface (top surface) to the metal plate.
It can be efficiently radiated to the outside and cooled.
The heat of the semiconductor element is
High heat dissipation efficiency due to diffusion through the convex part on the lower surface of the metal plate
Is obtained. Therefore, the characteristics of the semiconductor element deteriorate due to heat.
High-frequency signals input to and output from semiconductor elements
Communication is possible, and high reliability is obtained. Further, the lower surface of the metal plate is subjected to a second bonding.
Because the device is supported by wires,
It can be made thinner. Further, the metal plate has a convex portion at the center on the lower surface.
The semiconductor element and the first bonding wire.
After providing a liquid sealing resin layer covering the
When the metal plate is settled or pushed into the upper part by its own weight,
The resin flows along the side of the
The flow of grease is even, minimizing the displacement of the metal plate
Can be arranged well. Therefore, GaAs, InP
For small semiconductor devices such as compound semiconductor devices such as
It is extremely effective. Furthermore, an insulating substrate on which a semiconductor element is mounted
Metal terminals can be provided on the entire lower surface of the
The number of I / Os can be increased and metal terminals
Need to increase the area of the lower surface of the insulating substrate to provide
Since there is no semiconductor device, the size of the semiconductor device can be reduced. [0015] DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to the present invention will be described below.
This will be described in detail. FIG. 1 shows a semiconductor device of the present invention.
1 is a cross-sectional view illustrating an example of an embodiment. Figure 1
1 is an insulating substrate 2, a semiconductor element 3, a first bonder.
Wire 4, second bonding wire 5, sealing resin
A semiconductor device comprising a layer 6, a metal plate 7 and a metal terminal 8;
is there. The semiconductor device 1 according to the present invention is provided on an insulating substrate 2.
The semiconductor element 3 mounted on the side main surface and the semiconductor element 3
Formed on the outer periphery of the surface and the semiconductor element on the upper main surface
The electrode pads formed around the element 3 were electrically connected.
The first bonding wire 4, the semiconductor element 3 and the
Seal provided to cover one bonding wire 4
The resin layer 6 and the semiconductor element 3
The lower surface is embedded in the upper portion of the sealing resin layer 6 and the upper surface is exposed.
Metal plate 7, and the lower surface of the metal plate 7
Facing the central part of the upper surface of the semiconductor element 3
A convex portion having a lower surface is formed.
Is at the highest position than the first bonding wire 4
And the electrodes and / or
Or a plurality of second bondings connected to the electrode pads
It is supported by wires 5. The convex portion on the lower surface of the metal plate 7 has an outer peripheral end that is half.
The first bonding wire 4 on the upper surface of the conductor element 3 is connected.
To the center of the upper surface of the semiconductor element 3 with respect to the electrode to be
Is provided. That is, the lower surface of the projection is located above the semiconductor element 3.
The center of the surface (the area closer to the center than the outer
Area). And the lower surface of the metal plate 7
Has the above-mentioned convex portions, so that the semiconductor element 3 and the
A liquid sealing resin layer 6 covering the bonding wire 4
Is provided, the metal plate 7 is set on the sealing resin layer 6 by its own weight.
When lowering or pushing in, the resin flows along the side of the protrusion.
The flow around the resin becomes even,
The plate 7 can be arranged with high accuracy by minimizing the displacement.
You. Therefore, the metal plate 7 is connected to the first bonding wire.
Contacting the fourth and second bonding wires 5
Absent. The flow of the resin along the side surface of the projection is improved.
The convex part on the lower surface of the metal plate 7 has a spherical shape and an inverted conical shape.
Curved surface, convex polygonal shape such as inverted quadrangular pyramid, etc.
, That is, a shape in which the center of the lower surface of the convex portion protrudes.
Is preferred. Specifically, the shape of the protrusion on the lower surface of the metal plate 7
The shape is such that the angle of the side surface of the convex portion to the lower surface of the metal plate 7 is 0.03 ° or more.
90 ° polygonal column shape or the center of the lower surface of metal plate 7
It is preferable that the shape is a hemispherical shape having a vertex. in this case,
Since the resin flows quickly along the surface of the convex, the metal
When the plate 7 is installed in the upper portion of the sealing resin layer 6, the flow of resin is
It becomes even more, and the metal plate 7 is more accurately arranged.
be able to. If the above angle is less than 0.03 °, uniform resin
It becomes difficult to form the flow of the flow. The angle is 90 °
If it exceeds, the flow of resin will be hindered,
The position of the plate 7 in the sealing resin layer 6 tends to be unstable. Yo
More preferably, this angle is 3-60 degrees. Further, the lower surface of the metal plate 7 reaches the upper surface of the metal plate 7.
When a through hole is formed, the liquid resin flows to the side surface of the projection.
As well as upward through the through-hole,
The air plate is prevented from forming on the lower surface of the part and the metal plate 7
Settling on the upper portion of the sealing resin layer 6 is accelerated, and
This can be done quickly and the metal plate 7
It becomes even smaller. The central convex portion on the lower surface of the metal plate 7 is
The protruding length (height) of the lower surface from the outer periphery is 0.1 mm to 0.6 m
m is preferred. If it is less than 0.1 mm, the metal plate 7 can be precisely
It becomes difficult to place it.
Adjustment of the loop height of the bonding wire 5 becomes difficult.
You. The central convex part on the lower surface of the metal plate 7 is
The lower surface of the conductive element 3 has a lower surface that is close to and opposed to the center of the upper surface.
But the center of the lower surface of the convex portion and the upper surface of the semiconductor element 3
Is preferably 500 μm or less. Over 500μm
Of the second bonding wire 5 holding the metal plate 7
Since the height is much larger than 500 μm, the second
The twisting etc. occurs in the binding wire 5 and the height can be controlled.
It becomes difficult. Further, heat of the semiconductor element 3 is transferred through the metal plate 7.
The heat radiation efficiency when radiating the heat is likely to decrease. Furthermore, convex
That the lower surface of the part is in contact with the center of the upper surface of the semiconductor element 3.
(The interval is 0 μm) is more preferable, and the heat radiation efficiency is the highest.
It becomes. However, the surface of the semiconductor element 3 is generally passive.
The lower surface of the projection is semiconductor
Although there is no problem if it is in contact with the center of the upper surface of the element 3,
In the case of the semiconductor element 3 having no passivation film, the lower surface of the convex portion
Is not in contact with the center of the upper surface of the semiconductor element 3.
No. A portion other than the convex portion on the lower surface of the metal plate 7 (the outer periphery)
Part) has the highest position than the first bonding wire 4.
A plurality of second bondings having a high height and substantially the same height
It is supported by wires 5. Therefore, the metal plate 7 is
Is embedded in the upper portion of the sealing resin layer 6 and the upper surface is exposed.
In both cases, the second bonding wire 4
The outer periphery of the lower surface is supported by the top of the bonding wire 5 of FIG.
Have been. The insulating substrate 2 of the present invention is made of alumina (Al)_Two
O_Three) Ceramics, aluminum nitride (AlN) ceramic
Mix, silicon carbide (SiC) ceramics, glass
Ceramics such as Lamix or iron (Fe) -Ni
Kel (Ni) -Cobalt (Co) alloy, Fe-Ni alloy
It is made of a metal such as gold, Al, and copper (Cu). In particular, lightweight
Ceramics are preferred because they are inexpensive. The semiconductor device 1 of the present invention has excellent heat dissipation.
Optical communication, microwave communication
Or, it can be made with high-frequency signals used in fields such as millimeter wave communication.
Semiconductor devices, semi-conductors that perform high-speed arithmetic processing such as MPU
Conductive element or power for high current switching
For extremely large heat generation during operation of semiconductor devices, etc.
It is effective. Also, the semiconductor device 1 of the present invention
Almost all semiconductor devices
Semiconductor device that cannot be flip-chip mounted
Is also applicable. That is, in flip chip mounting,
Generally, it is mounted using a tin (Sn) -lead (Pb) alloy solder.
When mounting, a temperature of 230 ° C or higher is applied to make Sn-Pb
The connection is made by melting and cooling the alloy solder.
Some of the semiconductor elements 3 withstand temperatures of about 230 ° C
Can not be used for wire bonding
There is no problem with this implementation. The first bonding wire 4 of the present invention comprises:
The electrodes on the upper surface of the semiconductor element 3 and the upper main surface of the insulating substrate 2
Bonded to make electrical connection with the pole pad
ing. Then, the plurality of second bonding wires 5
Indicate that their highest position is the first bonding wire 4.
As well as at the same height.
Earrings have been. As a result, the second bondin
The wire 5 is formed by connecting the metal plate 7 to the first bonding wire 4.
Metal plate 7 can be used as semiconductor element 3 without contact
It functions as a support that supports as close as possible. Note that the second bonding wire 5 is
Electrode on upper surface of conductive element 3 and electrode on upper main surface of insulating substrate 2
To connect to the pad (FIG. 1)
Connects different electrode pads on the upper main surface (Figure
2) Further, different electrodes on the upper surface of the semiconductor element 3 are connected to each other.
It may be connected. The second bonding wire 5 is a semiconductor element
3 if it is connected to the electrode on the top
The electrode to which the wire 5 is connected is a semiconductor element even if it is connected.
It is good that it does not affect the performance of 3
No. In addition, the voltage to which the second bonding wire 5 is connected is
The pole is connected to, for example, an electrode for grounding (ground electrode).
In such a case, an electric ground
Can be taken. In the present invention, the upper surface of the metal plate 7 is a semiconductor element.
3 and support the metal plate 7 so as to be substantially parallel to the upper surface.
For uniform heat radiation, three or more second
It is preferable to provide a wiring wire 5. Also, the second bond
Even if four or more wirings 5 are provided, three
If the second bonding wire 5 is in contact with the metal plate 7
Just fine. Of course, all of the second bonding wires 5 are made of metal.
It may be in contact with the plate 7. Also, the second bonding
The wire 5 has an angular interval with respect to the center of the lower surface of the metal plate 7.
It is preferable that they are substantially the same, so that the metal plate 7 can be stably supported.
You. For example, in the case of three, the second bonding wire 5
The angle interval about the center of the lower surface of the metal plate 7 should be about 120 °.
No. The number of the second bonding wires 5 is too large.
However, the support function did not improve in proportion to the number
Therefore, from the viewpoint of cost, the number is preferably about 10 or less. Furthermore, the second bonding wire 5 is odd.
In the case of several pieces, they should be arranged at substantially equal intervals with respect to the metal plate 7.
Is preferred. In the case of an even number, approximately
Place them at intervals or face each other two at a time
It is preferable to arrange them. As described above, the second bonding wire 5
Is disposed to support the metal plate 7 so that the sealing resin layer
6, the metal plate 7 can be stably
And substantially parallel to the semiconductor element 3,
Good reliability without contact between the wiring wire 4 and the metal plate 7
It is possible to support well. The first bonding wire 4 and the second bonding wire 4
Of the highest position (top) with the bonding wire 5
The difference is that the metal plate 7 having a low thermal resistance
And the first bonding wire
So that the wire 4 and the metal plate 7 are not short-circuited.
It is necessary to. Therefore, the semiconductor device 3
Heat dissipation, prevention of short circuit with metal plate 7 and thinness of semiconductor device 1
From the viewpoint of miniaturization and miniaturization, the first bonding wire 4 and
The difference in height between the second bonding wire 5 and the highest position is
It is preferably about 50 to 100 μm. Less than 50μm
Means that the first bonding wire 4 is easily short-circuited to the metal plate 7
It becomes. If the thickness exceeds 100 μm, heat radiation of the semiconductor element 3
In addition, the semiconductor device 1 is likely to be thicker while the performance is reduced. First and second bonding wires of the present invention
4 and 5 have good electric conductivity and bonding
Use something that can be combined. For example, its diameter is 15-10
0μm linear bonding wire or 10 ~ 5 thickness
0-μm ribbon-shaped bonding wire with a width of 100-500 μm
Ears are preferred. In the case of a linear bonding wire, the diameter is
If it is less than 15 μm, the wire will meander during bonding.
It is easy to control the height of the highest position
It is difficult to support the shorting wire 4 without causing a short circuit.
You. When the diameter exceeds 100 μm,
It is difficult to cut the bonding wire easily.
Problem with workability. For ribbons, thickness
Is less than 10 μm or less than 100 μm in width.
The waist (strength) is weakened as a wire, and the metal plate 7
Difficult to support without shorting to bonding wire 4
It will be difficult. Thickness over 50μm or width 500μm
Exceeds the bonding wire when bonding
Is difficult to cut easily, and there is a problem with workability.
You. First and second bonding wires of the present invention
4 and 5, the electrodes of the semiconductor element 3 and the insulating substrate 2
Since the electrode pads of
The wire diameter is 25 to support single-pitch bonding.
~ 32 µm is more preferred. Also, the first and second bondies
The materials of the wiring wires 4 and 5 include Al, Au, Cu and the like.
Those having good electric conductivity are preferable. The sealing resin layer 6 of the present invention is made of an acrylic resin.
Fat, epoxy resin, silicone resin, polyether
It is made of an amine resin or the like. These resins are
Thickness that is higher than the highest position of the ding wire 5
Is applied by printing, potting, etc.
Thus, the sealing resin layer 6 is formed. These resins
Are the semiconductor element 3 and the first and second bonding wires.
In terms of workability for covering and providing the yarns 4 and 5,
Is preferably liquid. Of course, after application
Is UV cured. In the present invention, a convex portion is formed on the lower surface of the metal plate 7.
Is formed, the semiconductor element 3 and the second bond
Between the metal plate 7 and the metal wire 7
Extremely thin sealing resin layer 6 having low conductivity
And the thermal resistance by the sealing resin layer 6 can be reduced.
it can. In addition, a metal plate 7 having good heat conductivity is
As much as possible to the semiconductor element 3 buried in the sealing resin layer 6 and generating heat
The semiconductor element 3 and the metal plate 7 can be arranged close to each other.
Can be effectively reduced. The metal plate 7 of the present invention is made of Al, Cu, Au,
Ag, Pt, Zn, Fe, Mo, Ti, W, Ni, P
d, stainless steel, brass, Fe-Ni-Co alloy
Made of gold, Fe-Ni alloy, etc.
Al and Cu are preferred from the viewpoints of quantity and low cost. This metal plate
7 is placed on the upper surface of the sealing resin layer 6 before the sealing resin layer 6 is cured.
Good to be. Before the sealing resin layer 6 is cured,
The metal plate 7 is sealed by its own weight so as to approach the semiconductor element 3.
It can settle in the resin stopper layer 6. And the second
The height of the highest position of the bonding wire 5 is the first bond.
Because it is higher than the highest position of the
The metal plate 7 is higher than the highest position of the second bonding wire 5.
Does not approach the semiconductor element 3. Also, the metal plate 7
Short-circuits with the first bonding wire 4 to transmit a high-frequency signal.
Deterioration of transmission characteristics or disturbance of electrical grounding (ground)
High-frequency signals input to and output from the semiconductor element 3
The transmission characteristics of the signal are well maintained. The external dimensions of the metal plate 7 are
Heat is dissipated in the heat transfer path whose angle with respect to the
Heat of the semiconductor element 3 almost reaches the lower surface of the metal plate 7
Is effective in terms of effective heat dissipation.
When the outer dimensions of the insulating board 2 are larger than the outer dimensions of the
Preferably it is. Cooling capacity of metal plate 7 and metal plate 7
Considering the adhesive force of the sealing resin layer 6 with
The angle with respect to the upper surface of the semiconductor element 3 is 45 ° or less.
Metal plate within the range where most of the heat dissipated by
7 is preferably provided. In addition, the metal plate 7 of the present invention
In addition to the function as a hot plate, the electromagnetic
It can also be used as a cold plate. [0040] DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the semiconductor device of the present invention will be described below.
explain. The semiconductor device 1 of FIG. 1 is configured as follows.
Was. External dimensions of 12 mm (length) × 12 mm (width) × 0.5 mm (thickness)
For square insulating substrate 2 made of lumina ceramics
In the center of the upper main surface, 7.5 mm long x 7.5 mm wide x
0.3mm thick outer dimensions and positive operated by high frequency signal
A rectangular semiconductor element 3 is mounted by bonding with epoxy resin.
Was. Next, the periphery of the semiconductor element 3 on the upper main surface of the insulating substrate 2
And the outer periphery of the upper surface of the semiconductor element 3
Part of the electrode and the first bonding wire 4 electrically
Connected. Next, four corners of the upper surface of the semiconductor element 3 are provided.
Electrodes that do not affect the function of the semiconductor element 3
The electrode pad on the upper main surface of the edge substrate 2 is connected to the upper surface of the insulating substrate 2
Three second holes at equal angular intervals of 120 ° to the center of the
Ding wire 5 was connected. First and second bonding wires 4 and 5
Are gold (Au) wires each having a diameter of 25 μm.
Was. The height of the highest position of the first bonding wire 4 is half
0.15 mm from the upper surface of the conductive element 3
The height of the highest position of the ding wire 5 is the first bondy.
So that it is 0.1 mm higher than the highest position of
The height was set to 0.25 mm from the upper surface of the semiconductor element 3. Thereafter, an epoxy resin for forming the sealing resin layer 6 is formed.
Liquid resin consisting of oil is printed on the semiconductor
The child 3 and the first and second bonding wires 4 and 5 are covered.
It was applied at a thickness of 0.75 mm so as to be covered. Sealing resin layer 6
Before curing, the external dimensions are 9 mm long x 9 mm wide x thickness
0.5mm square, 6mm long at the center of the lower surface
6mm wide x 0.3mm high, 90 degrees to the bottom of the side
°, a metal plate 7 made of Al having a convex portion
The center of the upper surface of the plate 2 and the center of the lower surface of the metal plate 7
It was positioned and placed on the upper surface of the sealing resin layer 6. This work
In the process, equipment for mounting the semiconductor element 3 on the insulating substrate 2, for example,
Use the same equipment as a mounting machine with a robot arm, etc.
Can be done. Thereafter, the metal plate 7 is left standing for 30 minutes to seal the metal plate.
After settling to a predetermined position on the upper portion of the resin layer 6, the sealing resin layer 6
Is cured and cured, and its upper surface is placed above the semiconductor element 3.
So that the convex part of the metal plate 7 is located at a distance of about 0.25 mm from
A semiconductor device 1 (sample A) embedded in the semiconductor device was manufactured. As a comparative example, a metal plate 7 was provided.
The same configuration as the semiconductor device 1 of the above embodiment except that there is no
Semiconductor device (sample B) and a convex portion on the lower surface.
Except that it has no metal plate (flat plate).
A semiconductor device (sample C) having the same configuration as the body device 1 is manufactured.
Made. Then, a current is applied to each of the samples A to C.
When the semiconductor element 3 was driven by the
The displacement also generated 3 W of heat during driving. Samples A to C
In order to compare the heat radiation, when driving the semiconductor element 3,
Temperature at the center of the upper surface of the metal plate 7 exposed on the outer surface of the pull A
And the temperature at the center of the upper surface of the sealing resin layer 6 of the sample B,
The center of the upper surface of the metal plate 7 exposed on the outer surface of the sample C
The temperature was measured in each case. As a result, sample A
The surface temperature at the center of the upper surface of the metal plate 7 was 38 ° C.
On the other hand, in the center part of the upper surface of the sealing resin layer 6 of the sample B,
The surface temperature is 76 ° C and the center of the metal plate 7 of sample C
The surface temperature of the part was 57 ° C. Sample A is a sample
38 ° C improvement in heat dissipation compared to B
An improvement of 19 ° C. was observed for C. The accuracy of the placement of the metal plate 7
Displacement between the center of the lower surface and the center of the upper surface of semiconductor element 3
When measured, sample A was 60% of sample C
Improvement was observed. The present invention is not limited to the above-described embodiment and embodiment.
The present invention is not limited to the examples, and may be any seeds without departing from the gist of the present invention.
Making any changes is fine. For example, FIG.
As shown in FIG.
When the electrode on the upper surface of the semiconductor element 3 cannot be selected during
In this case, the second bonding wire 5 is
It may be connected between the electrode pads on the surface. Also, the metal plate 7
As shown in FIGS. 1 and 2, even if the upper surface is not completely flat
Well, as shown in FIG. 3, unevenness is provided on the upper surface of the metal plate 7.
To increase the surface area and achieve a shape with a more effective heat dissipation
good. [0049] According to the present invention, the semiconductor device is provided on the upper side of the insulating substrate.
The semiconductor element mounted on the main surface and outside the upper surface of the semiconductor element
The electrodes formed on the periphery and the periphery of the semiconductor element on the upper main surface
A first button electrically connected to the electrode pads formed in the surrounding area.
Semiconductor element and first bonder
A sealing resin layer provided to cover the
And the lower surface of the sealing resin layer
A metal plate that is embedded in the upper part and has an exposed upper surface.
The metal plate is located on the upper surface of the semiconductor element in the center of the lower surface.
A convex portion having a lower surface facing and close to the central portion is formed.
And the outer peripheral portion of the lower surface is the first bonding wire.
If the highest position is higher than the ear and it is about the same height
Multiple electrodes connected to electrodes and / or electrode pads
Being supported by the second bonding wire.
The metal plate contacts the first bonding wire and short-circuits
No, and place the metal plate very close to the semiconductor device
be able to. As a result, existing bonding wires
While mounting the semiconductor element by wire bonding
Is also halfway from the wire bonding surface (upper surface) of the semiconductor element.
Efficiently dissipates the heat of the conductive element to the outside via the metal plate
Can be cooled. The heat of the semiconductor element is
Diffuses through the protrusions on the lower surface of the metal plate close to the upper surface of the
Therefore, high heat dissipation efficiency can be obtained. Therefore, the semiconductor element
The characteristics of the element do not deteriorate due to heat,
High-frequency signals can be transmitted accurately, and high reliability can be obtained.
You. The lower surface of the metal plate is subjected to a second bonding.
Because the device is supported by wires,
It can be made thinner. Further, the metal plate has a convex portion at the center on the lower surface.
The semiconductor element and the first bonding wire.
After providing a liquid sealing resin layer covering the
When the metal plate is settled or pushed into the upper part by its own weight,
The resin flows along the side of the
The flow of grease is even and the accuracy of the metal plate is reduced
Can be arranged well. Therefore, GaAs, InP
For small semiconductor devices such as compound semiconductor devices such as
It is extremely effective. Further, an insulating substrate on which a semiconductor element is mounted
Metal terminals can be provided on the entire lower surface of the
The number of I / Os can be increased and metal terminals
Need to increase the area of the lower surface of the insulating substrate to provide
Since there is no semiconductor device, the size of the semiconductor device can be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a semiconductor device of the present invention. FIG. 2 is a cross-sectional view showing another example of the embodiment of the semiconductor device of the present invention. FIG. 3 is a sectional view showing another example of the embodiment of the semiconductor device of the present invention; FIG. 4 is a cross-sectional view of a conventional semiconductor device. FIG. 5 is a sectional view showing another example of a conventional semiconductor device. [Description of Signs] 1: Semiconductor device 2: Insulating substrate 3: Semiconductor element 4: First bonding wire 5: Second bonding wire 6: Sealing resin layer 7: Metal plate

Claims (1)

Claims 1. A semiconductor element mounted on an upper main surface of an insulating substrate, an electrode formed on an outer peripheral portion of an upper surface of the semiconductor element, and a semiconductor element on the upper main surface around the semiconductor element. A first bonding wire electrically connecting the formed electrode pads, a sealing resin layer provided so as to cover the semiconductor element and the first bonding wire, and disposed above the semiconductor element; And a metal plate whose lower surface is embedded in the upper portion of the sealing resin layer and whose upper surface is exposed, the metal plate being close to the center of the upper surface of the semiconductor element at the center of the lower surface. And the outer peripheral portion of the lower surface has the highest position higher than the first bonding wire and has substantially the same height as the first bonding wire. Wherein a being supported by a plurality of second bonding wires connected to the electrode pads.