JP2003045722A - Inductor and integrated circuit using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inductor which is reduced in high-frequency resistance so as to have improved Q-value. SOLUTION: A first conductor 11 and a second conductor 12 are kept in parallel with each other in a plane direction and spirally coiled in the same plane for the formation of an inductor. In this case, the first conductor 11 and the second conductor 12 are made to cross each other at a prescribed position, so as to replace their positions with each other, by which the first conductor 11 and second conductor 12 are set nearly equal to each other in length, and the inductor having a small loss and a high Q-value is formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inductor element formed on a plane mounted on an integrated circuit used in electronic equipment such as mobile communication equipment, and an integrated circuit using the inductor element.

[0002]

2. Description of the Related Art It has been practiced to form a planar inductor element in a semiconductor integrated circuit to form a desired circuit. For example, in FIG.
Amplifier 100 formed as a semiconductor integrated circuit shown in FIG.
In this case, the matching circuits 101 and 102 forming a part of the amplifier 100 include inductor elements 103 and 104.
Is installed.

The inductor elements 103 and 104 used in the matching circuits 101 and 102 must have a small loss in order to keep the characteristics of the amplifier 100 good and to prevent the power consumption from increasing. I have to. That is, the inductor elements 103 and 104 must have a so-called high Q value.

An inductor element used in such a semiconductor integrated circuit is, for example, Japanese Patent Laid-Open No. 2000-357.
There is one disclosed in Japanese Patent Publication No. 774. The inductor element disclosed in the patent publication is formed by arranging conductors 111 and 112 parallel to a plane direction on a substrate as shown in FIG. In 115, two conductors are formed into one.

In the inductor element shown in FIG. 12, paying attention to the skin effect in which the current density of the high-frequency current flowing in the conductor becomes high at the end of the conductor, for example, two conductors 111 and 11 are used.
By using multiple conductors, such as using 2,
The high frequency resistance of the conductor can be reduced. That is, by using multiple conductors,
This has the effect of reducing the high frequency resistance of the conductor.

[0006]

However, as shown in FIG. 12, an inductor is formed by winding a plurality of conductors parallel to the plane direction in a spiral shape (bending in the same direction many times). When the element is formed, the conductors located on the outside are longer than the conductors located on the inside. The longer the conductor is, the higher the high frequency resistance of the conductor located outside becomes, and the current flowing through the first conductor 111, which is the outer conductor, decreases.

FIG. 13 shows the result of the electromagnetic field analysis simulation for the inductor element shown in FIG. In FIG. 13, on the first conductor 111 and the second conductor 1
The length of the small arrow above 12 represents the current density.

As shown in FIG. 13, the length of the arrow indicating the current density on the first conductor 111 which is the outer conductor is shown on the second conductor 112 which is the inner conductor adjacent to the first conductor 111. It can be seen that there are many portions that are shorter than the arrow indicating the current density, and the current flowing through the first conductor is smaller than the current flowing through the second conductor.

Therefore, in the case of the inductor element shown in FIGS. 12 and 13, although the two conductors are used, the effect of reducing the high frequency resistance cannot be sufficiently exerted, and as a result, the inductor is There may be a problem such as an increase in power consumption of an integrated circuit using elements.

In view of the above, the present invention eliminates the above-mentioned problems, reduces the high frequency resistance, has a small loss, and an inductor element having a good so-called Q value, and is formed using this inductor element. It is an object to provide an integrated circuit.

[0011]

In order to solve the above-mentioned problems, an inductor element according to a first aspect of the present invention has a structure in which a plurality of conductors arranged on a substrate are kept in parallel with each other in a plane direction. An inductor element that is formed by winding a plurality of conductors in a plane shape and applies a high-frequency current of the same phase to each of the plurality of conductors to be used as a high-frequency line. It is characterized in that at least one crossing portion is provided so that the inner and outer positions of the plurality of conductors are interchanged by intersecting each of these.

According to the inductor element of the invention described in claim 1, when the inductor element is formed on a plane, a plurality of conductors arranged in parallel are formed by winding in a plane, for example. As a result, the lengths of the plurality of conductors arranged in parallel are different from each other.

Therefore, with respect to a plurality of conductors arranged in parallel, by providing a crossing portion for intersecting the outer conductor and the inner conductor at a predetermined position, and changing the positions of the conductors on the way, The inductor element is formed such that the lengths of the conductors approach the same length.

This makes it possible to bring the resistance values of the plurality of conductors close to each other and to make the current density of the current flowing through each of the plurality of conductors as uniform as possible. In this way, by making the current density of the currents flowing through the plurality of conductors as uniform as possible, it is possible to realize an inductor element with low loss and high so-called Q value and good characteristics.

An inductor element according to a second aspect of the present invention is the inductor element according to the first aspect, wherein the inductor element is symmetrically formed.
It is characterized in that the intersecting portion is provided at a position that maintains the symmetrical shape of the inductor element.

According to the inductor element of the present invention as defined in claim 2, a symmetrical inductor element is required in various differential circuits and the like, but in the case of forming a symmetrical inductor element, Also, by providing a crossing portion for exchanging the outer conductor and the inner conductor, the lengths of the outer conductor and the inner conductor are made close to each other. At this time, by providing the intersecting portion, the intersecting portion is provided at a position where the symmetrical shape is maintained so that the symmetrical shape of the inductor element is not damaged.

As a result, the lengths of the outer conductor and the inner conductor are made closer to each other while maintaining the symmetry so that the current densities of the outer conductor and the inner conductor become closer to each other, and the Q value is high.
It is made possible to form an inductor element that maintains a symmetrical shape.

Further, in the integrated circuit of the invention described in claim 3, a plurality of conductors which are kept parallel to the plane direction are spirally wound on the substrate in the plane. An integrated circuit using an inductor element, wherein the inductor element is formed so that high-frequency currents of the same phase are applied to each of the plurality of conductors to be used as a high-frequency line, wherein the inductor element has the plurality of conductors at predetermined positions. By intersecting each of the conductors, at least one intersecting portion that interchanges the inner and outer positions of the plurality of conductors is provided.

According to the integrated circuit of the third aspect,
Inductor elements used in the integrated circuit are arranged in parallel in a plane, for example, by providing a crossing portion that crosses a plurality of conductors that are spirally wound at a predetermined position, A conductor located outside,
The positions of the conductors located inside are replaced with each other, and the lengths of the plurality of conductors are considered to be close to each other.

By doing so, the resistance values of the plurality of conductors forming the inductor element are brought close to each other, the current density is uniform, the loss is small, and the Q value is high, so that the current flowing is small. Also, it is possible to realize an integrated circuit having good characteristics that meets the purpose.

An integrated circuit according to a fourth aspect of the present invention is the integrated circuit according to the third aspect, wherein the inductor elements are formed symmetrically, and the inductor elements are arranged at positions that maintain the symmetrical shape. It is characterized in that the intersection is provided.

The integrated circuit of the invention described in claim 4 is
For example, a symmetrical type is required such as a differential circuit, and an inductor element mounted therein is also required to be symmetrical. Therefore, the inductor element mounted on the integrated circuit is also formed to have a symmetrical shape, but in order to maintain the perfect symmetrical shape, the crossing portion that crosses a plurality of conductors arranged in parallel is also formed. It should be installed at symmetrical positions.

As a result, even in a symmetrical integrated circuit such as a differential circuit, an inductor element having a small loss and a high Q value is used, and an integrated circuit having a high characteristic that meets the purpose is realized even if a small amount of current flows. can do.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, with reference to the drawings, an inductor element to be formed on a plane according to the present invention,
Also, an embodiment of an integrated circuit using an inductor element will be described.

[First Embodiment] FIG. 1 is a plan view for explaining an inductor element 10 according to this embodiment. As shown in FIG. 1, in the inductor element 10 of the first embodiment, a first conductor 11 and a second conductor 12 are arranged in parallel to each other in a plane direction, and the first conductor 11 and the second conductor 12 are spirally arranged in a plane. It is formed by winding.

As shown in FIG. 1, in the inductor element 10, the first conductor 11 and the second conductor 12 are crossed at the crossing portion 13, the positions thereof are exchanged, and the outer first
By making the conductor 11 inside and the inside second conductor outside, the lengths of the first conductor 11 and the second conductor 12 are made close to each other. In addition, as shown in FIG.
The second conductor 12 and the second conductor 12 are integrated in the first terminal portion 14 and the second terminal portion 15.

FIG. 2 is an enlarged view showing the vicinity of the intersection 13 of the inductor element 10 of this embodiment. In the first embodiment, as shown in FIG.
Since the conductor 12 crosses the VIA (via) 16 and 17 and the conductor 18 in the lower layer so as to jump over the first conductor 11, the positions of the first conductor 11 and the second conductor 12 are switched. There is.

The structure of the intersection 13 will be further described with reference to FIG. FIG. 3 is a view showing a cut surface when the inductor element 10 is cut at the position indicated by the dotted line a in FIG. Since the inductor element 10 is cut at an oblique position as indicated by the dotted line a in FIG. 2, the first conductor 11 and the second conductor 12 appear to have different lateral widths. 2 conductor 12
The width and thickness are the same.

Then, as shown in FIG. 3, the first conductor 11
The second conductor 12 and the second conductor 12 are formed on the second interlayer film 32, which is an insulator, and the surface thereof is covered with the surface protective film 31. The second conductor 12 and the lower jump conductor 18 are connected by conductive VIAs 16 and VIAs 17. The lower layer conductor 18 is insulated from the silicon substrate by the first interlayer film 33.

Here, the materials of the respective parts will be summarized. In the first embodiment, the first conductor 11, the second conductor 12, and the lower conductor 18 are made of, for example, Al.
(Aluminum), Al-Cu (aluminum and copper), Al-Si-Cu (aluminum, silicon and copper) and other alloy layers are laminated with Ti / TiN (titanium / titanium nitride) diffusion barrier layers one above the other. It is made of Al wiring.

The VIA 16 and VIA 17 are via plugs in which the periphery of Al or W (tungsten) is covered with a diffusion barrier of TiN, for example, and electrically connect the conductor layers as described above. The first interlayer film 33 and the second interlayer film 32 are, for example, insulating films of silicon oxide. The surface protective film 31 is formed of, for example, PSG (Phosphosil).
Icate Glass) film. The silicon substrate 34 is, for example, a P-type silicon substrate.

By providing the intersection 13,
When the high-frequency current is passed through the inductor element 10 in which the positions of the first conductor 11 and the second conductor 12 in the plane direction are switched so that the lengths of the first conductor 11 and the second conductor 12 are close to each other, The result of having obtained the high frequency current density in the conductor 11 and the 2nd conductor 12 by the electromagnetic field simulation is shown in FIG.

Also in the case of FIG. 4, the length of the arrow on the conductor indicates the current density. As is apparent from comparison between FIG. 4 and FIG. 12 showing the result of the electromagnetic field simulation for the conventional inductor element having no crossing portion, as is apparent from the first embodiment shown in FIG. The inductor element 10 has a smaller difference in current density between the adjacent conductors, that is, the first conductor 11 and the second conductor 12.

As described above, by providing the crossing portion 13 and crossing the first conductor 11 and the second conductor 12 and switching the positions, the lengths of the first conductor 11 and the second conductor 12 are made closer to each other. By reducing the high frequency resistance,
It is possible to realize an inductor element with a small loss and a high Q value.

[Second Embodiment] FIG. 5 is a plan view for explaining an inductor element 20 according to the second embodiment. The inductor element according to the second embodiment is also formed on a plane as in the case of the inductor element according to the first embodiment.

In the inductor element 20 of the second embodiment, as shown in FIG. 5, the upper part of the dotted line b and the lower part of the dotted line b in FIG. 5 are symmetrical with respect to the dotted line b. It is a so-called symmetrical type formed so that. In semiconductor integrated circuits using silicon substrates, 2
Since a so-called differential circuit is often used in which circuit elements such as transistors having the same characteristics are arranged symmetrically with respect to each other, a symmetrical inductor element as shown in FIG. 5 is required. .

The symmetrical inductor element 20 of the second embodiment has two conductors, a first conductor 21 and a second conductor 22, as in the case of the inductor element 10 of the first embodiment described above. The conductors are arranged in parallel and wound in a plane. In addition, the first conductor 21 and the second conductor 22 are the first terminal portion 23,
The second terminal portion 24 has a single integrated structure.

Since the first terminal portion 23 and the second terminal portion 24 are arranged in the same direction in order to make them symmetrical, a portion where the conductors intersect on the dotted line b occurs. It will be. Explaining this part, the two conductors from the first terminal portion 23 and the second terminal portion 2
It is a portion where the two conductors from 4 intersect, and is not a portion where the first conductor and the second conductor intersect, unlike the intersection portion 13 of the first embodiment.

As described above, the portion where the conductors on the dotted line b in FIG. 5 intersect is a portion inevitably produced by winding the conductors. Then, even if there is a portion where the conductors on the dotted line b in FIG. 5 intersect in this way, as a result, the inductor element 1 of the first embodiment shown in FIG.
Like 0, the inductor element 2 of the second embodiment
It can be said that 0 is also formed by spirally winding a conductor.

That is, the inductor element 20 according to the second embodiment and the inductor element 10 according to the first embodiment shown in FIG. 1 differ in the number of turns of the conductor and whether or not they are symmetrical. Although there are some, they are formed in a spiral shape in almost the same manner.

In the case of the inductor element 20 of the second embodiment, the first conductor 21 and the second conductor 22 are included.
Are crossed so that the positions of the first conductor and the second conductor are interchanged, and four intersections 25, 26, 27, 28 are provided.

The intersections 25, 26, 27, 28 are 2
This is different from the intersection on the dotted line b where the conductors of each of them intersect with each other. By intersecting the first conductor and the second conductor, the positions of the first conductor and the second conductor are exchanged ( This is for making the lengths of the first conductor 21 and the second conductor 22 close to each other by exchanging the conductor and the inner conductor.

That is, the intersections 25, 26, 27, 28
Is similar to the crossing portion 13 of the inductor element 10 of the first embodiment described above with reference to FIGS.
Of the second conductor 22 and the second conductor 22, one conductor jumps over the other conductor so that the conductor crosses three-dimensionally.

In the case of the inductor element 20 according to the second embodiment, the intersection 25,
26, 27 and 28 are provided. In the case of the inductor element 20 shown in FIG. 5, since the upper part of the dotted line b and the lower part of the dotted line b are symmetrical with respect to the dotted line b, the intersection of the upper part of the dotted line b. 25 and the intersection 28 of the lower part of the dotted line b are provided at symmetrical positions. Similarly, the intersection 26 of the upper part of the dotted line b and the dotted line b
The intersecting portion 27 of the lower portion is provided at a position symmetrical with the intersecting portion 27.

In FIG. 6, as shown in FIG. 5, intersecting portions 25, 26, 27, 28 where the first conductor and the second conductor intersect each other.
It is a figure which shows the mode of a high frequency current density when a high frequency current is sent through the symmetrical inductor element 20 of this 2nd Embodiment provided with. FIG. 7 is a diagram showing a state of high-frequency current density when a high-frequency current is passed through a symmetrical inductor element that does not have an intersection of two adjacent conductors arranged in parallel. In FIGS. 6 and 7, the shade of the conductor color indicates the current density.

In the case of the inductor element having no intersection shown in FIG. 7, it can be seen that the color of the conductor located outside is light and the color of the conductor located inside is dark.
That is, in the case of the inductor element shown in FIG. 7, it is found that the current density flowing through the conductor located outside is lower than the current density flowing inside. This is because the conductor located outside is longer than the conductor located inside, so that the high frequency resistance is large, and as a result, the inductor element is The loss is large and the Q value is low.

However, in the case of the inductor element 20 of the second embodiment shown in FIG. 6, no clear shade appears as in the case of the inductor element shown in FIG. It can be confirmed that the difference in current density from the two conductors 22 is small.

As can be seen from this, the first conductor 2
Intersections 25, 26, 2 in which 1 and the second conductor 22 are intersected
In the case of the symmetrical inductor element 20 provided with 7, 28, by making the lengths of the first conductor 21 and the second conductor 22 close to each other, the high frequency resistances of the first conductor and the second conductor are made close to each other. Therefore, it is possible to realize a symmetrical inductor element having a high loss and a small loss.

Next, the inductor element according to the present invention having the intersections of the adjacent conductors shown in FIG. 6 and FIG.
The differential Q value with respect to the inductor element having no intersection between the adjacent conductors shown in FIG. Where differential Q
The value is a Q value when the circuit impedance is measured by a differential signal, and is different from the Q value when measured by a single-phase signal as measured by a general vector network analyzer.

For example, the calculation formula for obtaining the differential Q value (Qdiff) from the single-phase two-port impedance can be obtained by the formula shown in FIG. FIG. 9 is a graph in which the differential Q value of the inductor element according to the present invention having an intersection portion and the differential Q value of a conventional inductor element having no intersection portion are plotted. In FIG. 9, the horizontal axis represents frequency (GHz) and the vertical axis represents the value of the differential Q value.

Further, as shown in FIG. 9, the graph plotted with ◯ (circles) is the differential Q value of the inductor element according to the present invention, and the graph plotted with × (cross marks) shows the intersections. It is a differential Q value of an inductor element not provided. Then, as shown in FIG. 9, the differential Q value of the inductor element according to the present invention, which is provided with a crossing portion for crossing adjacent conductors, is about 10 times smaller than the differential Q value of the inductor element without the crossing portion. It can be confirmed that the percentage is high.

As described above, the current difference between the high frequency current and the high frequency current between the conductor located inside and the conductor located inside when the inductor element is formed using a plurality of conductors is reduced, and the loss is small. , An inductor element having a high Q value can be formed.

[Integrated Circuit Using Inductor Element] Next, an integrated circuit formed using the inductor element according to the present invention will be described. First, an example of an integrated circuit formed using the symmetrical inductor element 20 shown in FIG. 5 will be described.

FIG. 10 is a circuit diagram for explaining an oscillator circuit 40, which is an example of an integrated circuit that can be formed using the symmetrical inductor element 20. As shown in FIG. 10, the oscillation circuit 40 is shown in a circuit diagram. The resonance circuit 41 includes inductor elements 411 and 412 and a capacitor 413, and an FET (Field-EffectT).
and a negative resistance portion 42 including a current source 423.

Then, in FIG.
One symmetrical inductor element 20 is used in the portion indicated by the two inductor elements 411 and 412. When the symmetrical inductor element is used as described above, when the Q value of the symmetrical inductor element used is low, it is difficult for current to flow and the loss becomes large. Therefore, a negative resistance to compensate the loss is required. In addition, a lot of current is required.

However, in the case of the inductor element 20 provided with the intersections 25, 26, 27 and 28 of the first conductor and the second conductor according to the present invention, the loss is small and the Q value is high,
The current easily flows and the negative resistance is reduced (0 (zero)
Since it is possible to achieve the desired value, it is possible to realize an integrated circuit capable of oscillating as desired even if a small amount of current is passed.

As described above, the oscillator circuit 40 shown in FIG.
In addition, when the inductor element according to the present invention is used, it is possible to relatively easily form a good-performance (high-characteristic) oscillation circuit that can achieve the original purpose even if a small amount of current flows. it can.

Here, the case where the symmetric inductor element is mounted on the oscillation circuit 40 has been described. However, the symmetrical inductor element according to the present invention can be mounted not only on the oscillator circuit but also on various differential circuits such as an amplifier circuit. Since the inductor element according to the present invention has a small loss and a high Q value, the inductor element according to the present invention can be accurately operated with a small amount of current and achieve a predetermined purpose, regardless of the type of the differential circuit. It is possible to configure an integrated circuit capable of

Further, in the case of the oscillation circuit 40 shown in FIG. 10, a symmetrical inductor element is used. However, for example, in the matching circuit of the amplifier 100 shown in FIG. 11, not the symmetrical inductor element but the first circuit shown in FIG.
The inductor element 10 according to the embodiment can be used.

When the inductor element of the present invention is used in the matching circuit of the amplifier 100, the loss in the matching circuit can be reduced. Further, in the amplifier circuit 100, a sufficient amplification degree can be obtained, and the noise figure can be reduced. That is, an amplifier with high gain and low noise can be constructed.

As described above, by using the inductor element according to the present invention, it is possible to easily form an integrated circuit having high characteristics, which could not be realized conventionally.

In the first embodiment described above, one crossing portion is provided at which the first conductor and the second conductor intersect, and in the second embodiment, since it is symmetrical, 4 crossing points that intersect the 1st conductor and the 2nd conductor
I decided to set up some places. However, the present invention is not limited to this, and the number and location of intersections to be provided may be adjusted according to the inductor element.

However, the material of the VIAs 16 and 17 used for intersecting the first conductor and the second conductor is tungsten, which has a larger resistance value than the first and second conductors formed of Al, Cu or the like. Therefore, if the VIA of tungsten is used to create the intersection, the number of intersections should be kept to the minimum necessary in order not to increase the resistance value of the inductor element more than necessary. desirable.

Therefore, when the inductor element of the present invention to be actually mounted on an integrated circuit is formed, the shape of the inductor element to be formed, the number of turns, and other conditions are taken into consideration to perform an electromagnetic field simulation, By determining the position where the intersecting portion is provided, the number of intersecting portions and the like that are most suitable, it is possible to form a high-quality and high-performance inductor element that can be used for a predetermined purpose.

Further, in the above-described embodiments, the conductors that are arranged in parallel and intersect at a predetermined position are the first conductor and the second conductor. did. However, it is not limited to this. For example, the conductors that are arranged in parallel and intersect at a predetermined position include three, four,
As described above, the present invention can be applied to the case where the number is two or more.

[0066]

As described above, according to the present invention, it is possible to realize an inductor element in which the current difference between the high frequency currents of the outer conductor and the inner conductor is reduced, the loss is small, and the Q value is improved. .

By forming an integrated circuit using the inductor element according to the present invention, a high-performance integrated circuit with low current consumption can be formed.

[Brief description of drawings]

FIG. 1 is a diagram for explaining an embodiment of an inductor element of the present invention.

FIG. 2 is a diagram for explaining a crossing portion 13 provided in the inductor element shown in FIG.

FIG. 3 is a diagram for explaining the structure of a crossing portion 13 provided in the inductor element shown in FIG.

4 is a diagram showing a measurement result of a current density of each conductor of the inductor element shown in FIG.

FIG. 5 is a diagram for explaining another embodiment of the inductor element according to the present invention.

6 is a diagram showing a measurement result of a current density of each conductor of the inductor element shown in FIG.

FIG. 7 is a diagram showing measurement results of current densities of respective conductors of an inductor element in which an intersection of adjacent conductors is not provided.

FIG. 8 is a diagram showing a calculation formula for calculating a differential Q value.

FIG. 9 is a differential Q value of an inductor element according to the present invention,
It is a figure which shows the differential Q value of the inductor element which does not have the crossing part of adjacent conductors.

FIG. 10 is a circuit diagram for explaining an example of an integrated circuit formed by using the inductor element according to the present invention.

FIG. 11 is a circuit diagram showing a configuration example of an amplifier.

FIG. 12 is a diagram for explaining a configuration example of a conventional inductor element.

13 is a diagram showing measurement results of current density of each conductor of the inductor element shown in FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Inductor element, 11 ... 1st conductor, 12 ... 2nd conductor, 13 ... Intersection part, 14 ... 1st terminal part, 15 ... 2nd terminal part, 16, 17 ... Via (VIA), 18 ... Conductor, 31 …
Surface protection film, 32 ... Second interlayer film, 33 ... First interlayer film, 34 ... Silicon substrate, 21 ... First conductor, 22 ... Second
Conductor, 23 ... First terminal portion, 24 ... Second terminal portion, 25, 2
6 ... Intersection, 27, 28 ... Intersection, 40 ... Oscillation circuit, 4
1 ... Resonance part, 42 ... Negative resistance part, 411, 412 ... Inductor element, 423 ... Capacitor, 421, 422 ... F
ET, 423 ... Current source

Claims (4)

[Claims] 1. A plurality of conductors formed on a substrate so as to be kept parallel to the plane direction so as to be spirally wound in a plane, and the same phase is formed on each of the plurality of conductors. The inductor element for flowing a high-frequency current to be used as a high-frequency line, wherein the inside and outside positions of the plurality of conductors are switched by intersecting each of the plurality of conductors at a predetermined position. The inductor element is characterized in that at least one intersection is provided. 2. The inductor element according to claim 1, wherein the inductor element is formed symmetrically, and the intersecting portion is provided at a position for keeping the symmetrical shape of the inductor element. And inductor element. 3. A plurality of conductors, which are arranged in a plane parallel to each other on a substrate, are formed so as to be spirally wound in a plane, and the same phase is applied to each of the plurality of conductors. Is an integrated circuit using an inductor element for flowing a high-frequency current to be used as a high-frequency line, wherein the inductor element is formed by intersecting each of the plurality of conductors at a predetermined position. An integrated circuit characterized in that at least one crossing portion is provided so as to switch the positions of the inside and the outside of the conductor. 4. The integrated circuit according to claim 3, wherein the inductor element is formed symmetrically, and the intersecting portion is provided at a position maintaining the symmetrical shape. An integrated circuit characterized by.