JP2000294119A5 - - Google Patents
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- JP2000294119A5 JP2000294119A5 JP1999098386A JP9838699A JP2000294119A5 JP 2000294119 A5 JP2000294119 A5 JP 2000294119A5 JP 1999098386 A JP1999098386 A JP 1999098386A JP 9838699 A JP9838699 A JP 9838699A JP 2000294119 A5 JP2000294119 A5 JP 2000294119A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- cathode electrode
- carbon nanotubes
- electron
- electron emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002041 carbon nanotube Substances 0.000 description 8
- 229910021393 carbon nanotube Inorganic materials 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000003575 carbonaceous material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項1】
絶縁基板上にカソード電極を形成する工程と、分散させたカーボンナノチューブを含むカーボン物質を前記カソード電極に被着する工程と、前記カソード電極に対して電界を略垂直方向に印加した状態で前記カーボンナノチューブを含むカーボン物質を前記カソード電極に固定させて電子放出素子を形成する工程とを備えて成ることを特徴とする電子放出源の製造方法。
【請求項2】
前記カソード電極と前記カーボンナノチューブを含むカーボン物質の間に抵抗層を形成する工程を備えて成ることを特徴とする請求項1記載の電子放出源の製造方法。
【請求項3】
前記カソード電極又は前記抵抗層は、前記カーボンナノチューブを含むカーボン物質を被着するときにはペースト状であり、前記カーボンナノチューブを含むカーボン物質を前記カソード電極に固定する際に前記電界を印加すると共に乾燥させることを特徴とする請求項1又は請求項2記載の電子放出源の製造方法。
【請求項4】
前記カーボンナノチューブを含むカーボン物質はペースト状の分散したカーボンナノチューブを含むカーボン物質を他の基板に被着乾燥することにより形成され、前記カソード電極又は前記抵抗層にカーボンナノチューブを含むカーボン物質を被着する際に、前記他の基板に被着したカーボンナノチューブを含むカーボン物質を、前記カソード電極又は前記抵抗層に転写することを特徴とする請求項1乃至請求項3のいずれか一に記載の電子放出源の製造方法。
【請求項5】
請求項1乃至請求項4のいずれか一に記載の方法によって製造された電子放出源。
【請求項6】
電子放出源、ゲート電極及び蛍光体が被着されたアノード電極を真空気密容器内に配設し、前記電子放出源から放出される電子を前記蛍光体に射突させることにより表示を行う蛍光発光型表示器において、前記電子放出源として、請求項5記載の電子放出源を使用したことを特徴とする蛍光発光型表示器。
[Claims]
[Claim 1]
The step of forming a cathode electrode on an insulating substrate, the step of adhering a carbon substance containing dispersed carbon nanotubes to the cathode electrode, and the carbon in a state where an electric field is applied to the cathode electrode in a substantially vertical direction. A method for producing an electron emitting source, which comprises a step of fixing a carbon substance containing nanotubes to the cathode electrode to form an electron emitting element.
2.
The method for producing an electron emitting source according to claim 1, further comprising a step of forming a resistance layer between the cathode electrode and a carbon substance containing the carbon nanotubes.
3.
The cathode electrode or the resistance layer is in the form of a paste when the carbon material containing the carbon nanotubes is adhered, and when the carbon material containing the carbon nanotubes is fixed to the cathode electrode, the electric field is applied and dried. The method for producing an electron emitting source according to claim 1 or 2, wherein the electron emitting source is manufactured.
4.
The carbon material containing the carbon nanotubes is formed by adhering and drying the carbon material containing the dispersed carbon nanotubes in the form of a paste on another substrate, and the carbon material containing the carbon nanotubes is adhered to the cathode electrode or the resistance layer. The electron according to any one of claims 1 to 3, wherein a carbon substance containing carbon nanotubes adhered to the other substrate is transferred to the cathode electrode or the resistance layer. Method of manufacturing the emission source.
5.
An electron emitting source produced by the method according to any one of claims 1 to 4.
6.
Fluorescent emission that displays by arranging an electron emission source, a gate electrode, and an anode electrode coated with a phosphor in a vacuum airtight container and causing the electrons emitted from the electron emission source to collide with the phosphor. A fluorescent emission type display characterized in that the electron emission source according to claim 5 is used as the electron emission source in the type indicator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9838699A JP4043139B2 (en) | 1999-04-06 | 1999-04-06 | Manufacturing method of electron emission source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9838699A JP4043139B2 (en) | 1999-04-06 | 1999-04-06 | Manufacturing method of electron emission source |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000294119A JP2000294119A (en) | 2000-10-20 |
JP2000294119A5 true JP2000294119A5 (en) | 2006-06-08 |
JP4043139B2 JP4043139B2 (en) | 2008-02-06 |
Family
ID=14218433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9838699A Expired - Fee Related JP4043139B2 (en) | 1999-04-06 | 1999-04-06 | Manufacturing method of electron emission source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4043139B2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005097003A (en) * | 2000-05-31 | 2005-04-14 | Nec Corp | Method for fixing carbon nanotube |
KR100443675B1 (en) * | 2001-07-19 | 2004-08-09 | 엘지전자 주식회사 | Data storage system using electron beam of carbon nanotube tips |
WO2004003955A1 (en) * | 2002-06-27 | 2004-01-08 | Nec Corporation | Cold cathode structure, electron emission device, and electron emission type display device |
KR20050106670A (en) * | 2004-05-06 | 2005-11-11 | 삼성에스디아이 주식회사 | Manufacturing method of carbon nano tube field emission device |
KR20050114032A (en) * | 2004-05-31 | 2005-12-05 | 삼성에스디아이 주식회사 | A flexible emitter using high molecular compound and a method for fabricating the same |
JP4061411B2 (en) * | 2005-01-25 | 2008-03-19 | 国立大学法人信州大学 | Field emission electrode and manufacturing method thereof |
KR20080013366A (en) * | 2006-08-08 | 2008-02-13 | 한국과학기술원 | Method for manufacturing a field emitter electrode using the array of nanowires |
JP5753192B2 (en) * | 2009-12-22 | 2015-07-22 | クナノ・アーベー | Method for manufacturing a nanowire structure |
-
1999
- 1999-04-06 JP JP9838699A patent/JP4043139B2/en not_active Expired - Fee Related
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