IN2013CH04799A - - Google Patents

Info

Publication number
IN2013CH04799A
IN2013CH04799A IN4799CH2013A IN2013CH04799A IN 2013CH04799 A IN2013CH04799 A IN 2013CH04799A IN 4799CH2013 A IN4799CH2013 A IN 4799CH2013A IN 2013CH04799 A IN2013CH04799 A IN 2013CH04799A
Authority
IN
India
Application number
Inventor
Thevasahayam Arockiadoss
Original Assignee
Empire Technology Dev Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Empire Technology Dev Llc filed Critical Empire Technology Dev Llc
Priority to IN4799CH2013 priority Critical patent/IN2013CH04799A/en
Priority to US14/520,358 priority patent/US9914647B2/en
Publication of IN2013CH04799A publication Critical patent/IN2013CH04799A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00Compounds of molybdenum
    • C01G39/06Sulfides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C01B21/0768After-treatment, e.g. grinding, purification
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/12Sulfides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
    • H01G11/24Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
    • H01G11/26Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H01G11/28Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
    • H01G11/30Electrodes characterised by their material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/66Current collectors
    • H01G11/68Current collectors characterised by their material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/01Crystal-structural characteristics depicted by a TEM-image
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/20Two-dimensional structures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/04Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/20Particle morphology extending in two dimensions, e.g. plate-like
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/20Particle morphology extending in two dimensions, e.g. plate-like
    • C01P2004/24Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13Energy storage using capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Photovoltaic Devices (AREA)
IN4799CH2013 2013-10-24 2013-10-24 IN2013CH04799A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IN4799CH2013 IN2013CH04799A (en) 2013-10-24 2013-10-24
US14/520,358 US9914647B2 (en) 2013-10-24 2014-10-22 Two-dimensional transition metal dichalcogenide sheets and methods of preparation and use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN4799CH2013 IN2013CH04799A (en) 2013-10-24 2013-10-24

Publications (1)

Publication Number Publication Date
IN2013CH04799A true IN2013CH04799A (en) 2015-05-08

Family

ID=52995168

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4799CH2013 IN2013CH04799A (en) 2013-10-24 2013-10-24

Country Status (2)

Country Link
US (1) US9914647B2 (en)
IN (1) IN2013CH04799A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102412965B1 (en) * 2014-12-30 2022-06-24 삼성전자주식회사 Electronic device having two dimensional material layer and method of manufacturing the electronic device using inkjet printing
US9735227B2 (en) * 2015-08-03 2017-08-15 Synopsys, Inc. 2D material super capacitors
CN106608652B (en) * 2015-10-21 2018-01-09 中国科学院大连化学物理研究所 The preparation method of metal cation doping molybdenum disulfide material and material and application
CN105329946A (en) * 2015-11-16 2016-02-17 暨南大学 Molybdenum disulfide nanosheet with rich active sites as well as preparation method and application of molybdenum disulfide nanosheet
CN105449026A (en) * 2016-01-08 2016-03-30 湖南师范大学 Molybdenum disulfide stacked solar cell and preparation method thereof
WO2017177168A1 (en) * 2016-04-07 2017-10-12 University Of North Texas Two-dimensional transition metal dichalcogenide micro-supercapacitors
WO2017210264A1 (en) 2016-06-03 2017-12-07 Ohio University Directed growth of electrically self-contacted monolayer transition metal dichalcogenides with lithographically defined metallic patterns
CN106328387A (en) * 2016-08-31 2017-01-11 江苏大学 Nitrogen-doped carbon nanotube/molybdenum disulfide nanosphere composite material and preparation method thereof
CN106517335B (en) * 2016-10-21 2018-10-12 河南师范大学 A kind of preparation method of single layer tungsten disulfide nano slices
CN108336151B (en) * 2017-01-20 2020-12-04 清华大学 Schottky diode, Schottky diode array and preparation method of Schottky diode
CN110240744B (en) * 2019-05-05 2023-03-10 浙江太湖远大新材料股份有限公司 Silane crosslinked polyethylene cable insulating material
CN114345373A (en) * 2020-09-27 2022-04-15 武汉理工大学 Preparation method of oxygen-doped molybdenum disulfide nanosheet hydrogen evolution electrocatalyst rich in defects
US20240102196A1 (en) * 2020-11-13 2024-03-28 Board Of Regents, The University Of Texas System Systems and methods for thinning transition metal dichalcogenides
CN114457426B (en) * 2021-11-22 2022-11-22 天津理工大学 Ti-doped monolayer molybdenum disulfide single crystal and preparation method and application thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9181486B2 (en) 2006-05-25 2015-11-10 Aspen Aerogels, Inc. Aerogel compositions with enhanced performance
GB0914816D0 (en) 2009-08-25 2009-09-30 Isis Innovation Method of fabrication of aligned nanotube-containing composites
FR2965569B1 (en) * 2010-10-04 2019-06-14 X-Fab France USE OF A PROCESS FOR DEPOSITION BY CATHODIC SPRAYING OF A CHALCOGENURE LAYER
US8993113B2 (en) 2010-08-06 2015-03-31 Lawrence Livermore National Security, Llc Graphene aerogels
GB2483288A (en) 2010-09-03 2012-03-07 Trinity College Dublin Exfoliation process for forming semiconducting nanoflakes
GB201101482D0 (en) 2011-01-28 2011-03-16 Isis Innovation Exfoiation of lyered material
US9208919B2 (en) * 2012-02-03 2015-12-08 Massachusetts Institute Of Technology Aerogels and methods of making same
IN2013CH04797A (en) * 2013-10-24 2015-05-08 Empire Technology Dev Llc

Also Published As

Publication number Publication date
US20150116906A1 (en) 2015-04-30
US9914647B2 (en) 2018-03-13

Similar Documents

Publication Publication Date Title
AP2016009275A0 (en)
BR112015007533A2 (en)
BR102016010778A2 (en)
BR112014018502A2 (en)
BR112014019326A2 (en)
BR112014018516A2 (en)
BR112014020341A2 (en)
BR112014018480A2 (en)
BR112014017669A2 (en)
BR112014021878A2 (en)
BR112016001551A2 (en)
BR112016009483A2 (en)
IN2013CH04797A (en)
BR112014019204A2 (en)
BR112016010973A2 (en)
IN2013CH04799A (en)
BR112015015948A2 (en)
BR112014018578A2 (en)
BR112014018483A2 (en)
BR112014017653A2 (en)
BR112016003540A2 (en)
BR112014017601A2 (en)
BR112015015312A2 (en)
BR112014018496A2 (en)
BR112014018514A2 (en)