IN2013CH04799A - - Google Patents
Info
- Publication number
- IN2013CH04799A IN2013CH04799A IN4799CH2013A IN2013CH04799A IN 2013CH04799 A IN2013CH04799 A IN 2013CH04799A IN 4799CH2013 A IN4799CH2013 A IN 4799CH2013A IN 2013CH04799 A IN2013CH04799 A IN 2013CH04799A
- Authority
- IN
- India
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/06—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
- C01B21/0768—After-treatment, e.g. grinding, purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
- C01G1/12—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
- H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/66—Current collectors
- H01G11/68—Current collectors characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/01—Crystal-structural characteristics depicted by a TEM-image
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/20—Two-dimensional structures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
- C01P2004/24—Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN4799CH2013 IN2013CH04799A (en) | 2013-10-24 | 2013-10-24 | |
US14/520,358 US9914647B2 (en) | 2013-10-24 | 2014-10-22 | Two-dimensional transition metal dichalcogenide sheets and methods of preparation and use |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN4799CH2013 IN2013CH04799A (en) | 2013-10-24 | 2013-10-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2013CH04799A true IN2013CH04799A (en) | 2015-05-08 |
Family
ID=52995168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN4799CH2013 IN2013CH04799A (en) | 2013-10-24 | 2013-10-24 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9914647B2 (en) |
IN (1) | IN2013CH04799A (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102412965B1 (en) * | 2014-12-30 | 2022-06-24 | 삼성전자주식회사 | Electronic device having two dimensional material layer and method of manufacturing the electronic device using inkjet printing |
US9735227B2 (en) * | 2015-08-03 | 2017-08-15 | Synopsys, Inc. | 2D material super capacitors |
CN106608652B (en) * | 2015-10-21 | 2018-01-09 | 中国科学院大连化学物理研究所 | The preparation method of metal cation doping molybdenum disulfide material and material and application |
CN105329946A (en) * | 2015-11-16 | 2016-02-17 | 暨南大学 | Molybdenum disulfide nanosheet with rich active sites as well as preparation method and application of molybdenum disulfide nanosheet |
CN105449026A (en) * | 2016-01-08 | 2016-03-30 | 湖南师范大学 | Molybdenum disulfide stacked solar cell and preparation method thereof |
WO2017177168A1 (en) * | 2016-04-07 | 2017-10-12 | University Of North Texas | Two-dimensional transition metal dichalcogenide micro-supercapacitors |
WO2017210264A1 (en) | 2016-06-03 | 2017-12-07 | Ohio University | Directed growth of electrically self-contacted monolayer transition metal dichalcogenides with lithographically defined metallic patterns |
CN106328387A (en) * | 2016-08-31 | 2017-01-11 | 江苏大学 | Nitrogen-doped carbon nanotube/molybdenum disulfide nanosphere composite material and preparation method thereof |
CN106517335B (en) * | 2016-10-21 | 2018-10-12 | 河南师范大学 | A kind of preparation method of single layer tungsten disulfide nano slices |
CN108336151B (en) * | 2017-01-20 | 2020-12-04 | 清华大学 | Schottky diode, Schottky diode array and preparation method of Schottky diode |
CN110240744B (en) * | 2019-05-05 | 2023-03-10 | 浙江太湖远大新材料股份有限公司 | Silane crosslinked polyethylene cable insulating material |
CN114345373A (en) * | 2020-09-27 | 2022-04-15 | 武汉理工大学 | Preparation method of oxygen-doped molybdenum disulfide nanosheet hydrogen evolution electrocatalyst rich in defects |
US20240102196A1 (en) * | 2020-11-13 | 2024-03-28 | Board Of Regents, The University Of Texas System | Systems and methods for thinning transition metal dichalcogenides |
CN114457426B (en) * | 2021-11-22 | 2022-11-22 | 天津理工大学 | Ti-doped monolayer molybdenum disulfide single crystal and preparation method and application thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9181486B2 (en) | 2006-05-25 | 2015-11-10 | Aspen Aerogels, Inc. | Aerogel compositions with enhanced performance |
GB0914816D0 (en) | 2009-08-25 | 2009-09-30 | Isis Innovation | Method of fabrication of aligned nanotube-containing composites |
FR2965569B1 (en) * | 2010-10-04 | 2019-06-14 | X-Fab France | USE OF A PROCESS FOR DEPOSITION BY CATHODIC SPRAYING OF A CHALCOGENURE LAYER |
US8993113B2 (en) | 2010-08-06 | 2015-03-31 | Lawrence Livermore National Security, Llc | Graphene aerogels |
GB2483288A (en) | 2010-09-03 | 2012-03-07 | Trinity College Dublin | Exfoliation process for forming semiconducting nanoflakes |
GB201101482D0 (en) | 2011-01-28 | 2011-03-16 | Isis Innovation | Exfoiation of lyered material |
US9208919B2 (en) * | 2012-02-03 | 2015-12-08 | Massachusetts Institute Of Technology | Aerogels and methods of making same |
IN2013CH04797A (en) * | 2013-10-24 | 2015-05-08 | Empire Technology Dev Llc |
-
2013
- 2013-10-24 IN IN4799CH2013 patent/IN2013CH04799A/en unknown
-
2014
- 2014-10-22 US US14/520,358 patent/US9914647B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20150116906A1 (en) | 2015-04-30 |
US9914647B2 (en) | 2018-03-13 |