EP1949452A2 - Silicon nanoparticle photovoltaic devices - Google Patents
Silicon nanoparticle photovoltaic devicesInfo
- Publication number
- EP1949452A2 EP1949452A2 EP06851754A EP06851754A EP1949452A2 EP 1949452 A2 EP1949452 A2 EP 1949452A2 EP 06851754 A EP06851754 A EP 06851754A EP 06851754 A EP06851754 A EP 06851754A EP 1949452 A2 EP1949452 A2 EP 1949452A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- film
- photovoltaic device
- silicon
- solar cell
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 59
- 230000005855 radiation Effects 0.000 claims abstract description 19
- 238000005424 photoluminescence Methods 0.000 claims abstract description 9
- 239000002105 nanoparticle Substances 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 230000004298 light response Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 abstract description 33
- 230000005611 electricity Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 210000004027 cell Anatomy 0.000 description 95
- 239000010408 film Substances 0.000 description 81
- 239000010410 layer Substances 0.000 description 28
- 239000002245 particle Substances 0.000 description 25
- 239000000084 colloidal system Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 229910021426 porous silicon Inorganic materials 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 239000002159 nanocrystal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000001045 blue dye Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000002120 nanofilm Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002073 nanorod Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73613905P | 2005-11-10 | 2005-11-10 | |
PCT/US2006/043808 WO2008051235A2 (en) | 2005-11-10 | 2006-11-09 | Silicon nanoparticle photovoltaic devices |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1949452A2 true EP1949452A2 (en) | 2008-07-30 |
Family
ID=39325057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06851754A Withdrawn EP1949452A2 (en) | 2005-11-10 | 2006-11-09 | Silicon nanoparticle photovoltaic devices |
Country Status (5)
Country | Link |
---|---|
US (1) | US9263600B2 (en) |
EP (1) | EP1949452A2 (en) |
CN (1) | CN101405088A (en) |
BR (1) | BRPI0618291A2 (en) |
WO (1) | WO2008051235A2 (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9222169B2 (en) | 2004-03-15 | 2015-12-29 | Sharp Laboratories Of America, Inc. | Silicon oxide-nitride-carbide thin-film with embedded nanocrystalline semiconductor particles |
US9263600B2 (en) | 2005-11-10 | 2016-02-16 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle photovoltaic devices |
US20090050201A1 (en) * | 2007-07-17 | 2009-02-26 | The Research Foundation Of State University Of New York | Solar cell |
US9475985B2 (en) | 2007-10-04 | 2016-10-25 | Nanosi Advanced Technologies, Inc. | Nanosilicon-based room temperature paints and adhesive coatings |
EP2269231A4 (en) * | 2008-03-11 | 2011-04-20 | Lightwave Power Inc | Integrated solar cell with wavelength conversion layers and light guiding and concentrating layers |
TWI423452B (en) * | 2008-10-07 | 2014-01-11 | Neo Solar Power Corp | Solar apparatus |
US8933526B2 (en) | 2009-07-15 | 2015-01-13 | First Solar, Inc. | Nanostructured functional coatings and devices |
DE102009028393A1 (en) * | 2009-08-10 | 2011-02-17 | Robert Bosch Gmbh | solar cell |
US20110132455A1 (en) * | 2009-12-03 | 2011-06-09 | Du Pont Apollo Limited | Solar cell with luminescent member |
FR2953996B1 (en) | 2009-12-11 | 2012-01-20 | Centre Nat Rech Scient | ELECTRONIC MANAGEMENT SYSTEM OF PHOTOVOLTAIC CELLS FUNCTION OF METEOROLOGY |
FR2953997B1 (en) | 2009-12-11 | 2012-01-20 | Centre Nat Rech Scient | SYSTEM FOR ELECTRONIC MANAGEMENT OF PHOTOVOLTAIC CELLS WITH ADJUSTABLE THRESHOLDS |
WO2011078894A1 (en) * | 2009-12-21 | 2011-06-30 | Honeywell International Inc. | Efficient enhanced solar cells |
CN102834898B (en) * | 2010-04-23 | 2016-06-15 | 日立化成工业株式会社 | N-type diffusion layer forms the manufacture method of constituent, the manufacture method of n-type diffusion layer and solar cell device |
US20120080066A1 (en) * | 2010-09-30 | 2012-04-05 | General Electric Company | Photovoltaic devices |
US20120080070A1 (en) * | 2010-09-30 | 2012-04-05 | General Electric Company | Photovoltaic devices |
US9647162B2 (en) | 2011-01-20 | 2017-05-09 | Colossus EPC Inc. | Electronic power cell memory back-up battery |
US20120187763A1 (en) | 2011-01-25 | 2012-07-26 | Isoline Component Company, Llc | Electronic power supply |
KR101754282B1 (en) | 2011-03-30 | 2017-07-06 | 한국전자통신연구원 | resonance tunneling device and method of manufacturing the same |
JP5745958B2 (en) * | 2011-07-07 | 2015-07-08 | トヨタ自動車株式会社 | Photoelectric conversion element |
CN102496637A (en) * | 2011-12-21 | 2012-06-13 | 中国科学技术大学 | Solar cell with intermediate bands and photoelectric conversion film material of solar cell |
NL2008514C2 (en) * | 2012-03-21 | 2013-09-25 | Inter Chip Beheer B V | Solar cell. |
DE102012206967A1 (en) * | 2012-04-26 | 2013-10-31 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
DE102013205671A1 (en) * | 2013-03-28 | 2014-10-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solar cell for converting incident radiation into electrical energy with a down conversion layer |
JP2015138829A (en) * | 2014-01-21 | 2015-07-30 | 長州産業株式会社 | Solar battery module |
TWI680941B (en) * | 2016-02-24 | 2020-01-01 | 國立交通大學 | Manufacturing, utilization, and antifouling coating of hydroxyl-covered silicon quantum dot nanoparticle |
TWI749037B (en) * | 2016-07-27 | 2021-12-11 | 香港商盈保發展有限公司 | Improvements in the production of silicon nano-particles and uses thereof |
RU2750366C1 (en) * | 2020-10-23 | 2021-06-28 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Semiconductor photovoltaic converter |
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BE789331A (en) * | 1971-09-28 | 1973-01-15 | Communications Satellite Corp | FINE GEOMETRY SOLAR CELL |
US4816324A (en) * | 1986-05-14 | 1989-03-28 | Atlantic Richfield Company | Flexible photovoltaic device |
US5211761A (en) | 1990-06-29 | 1993-05-18 | Sanyo Electric Co., Ltd. | Photovoltaic device and manufacturing method thereof |
US5866471A (en) * | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
US7429369B2 (en) | 1999-10-22 | 2008-09-30 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle nanotubes and method for making the same |
US6456423B1 (en) | 1999-10-22 | 2002-09-24 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle microcrystal nonlinear optical devices |
US20050072679A1 (en) | 1999-10-22 | 2005-04-07 | Nayfeh Munir H. | Germanium and germanium alloy nanoparticle and method for producing the same |
US6743406B2 (en) | 1999-10-22 | 2004-06-01 | The Board Of Trustees Of The University Of Illinois | Family of discretely sized silicon nanoparticles and method for producing the same |
US6585947B1 (en) | 1999-10-22 | 2003-07-01 | The Board Of Trustess Of The University Of Illinois | Method for producing silicon nanoparticles |
US6597496B1 (en) | 1999-10-25 | 2003-07-22 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle stimulated emission devices |
US6984842B1 (en) | 1999-10-25 | 2006-01-10 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle field effect transistor and transistor memory device |
US6852443B1 (en) | 1999-11-17 | 2005-02-08 | Neah Power Systems, Inc. | Fuel cells having silicon substrates and/or sol-gel derived support structures |
US6410934B1 (en) | 2001-02-09 | 2002-06-25 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle electronic switches |
US6538191B1 (en) * | 2001-09-26 | 2003-03-25 | Biomed Solutions, Llc | Photocell with fluorescent conversion layer |
US6660152B2 (en) | 2001-11-15 | 2003-12-09 | The Board Of Trustees Of The University Of Illinois | Elemental silicon nanoparticle plating and method for the same |
US6992298B2 (en) * | 2001-11-21 | 2006-01-31 | The Board Of Trustees Of The University Of Illinois | Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making |
US20040126582A1 (en) | 2002-08-23 | 2004-07-01 | Nano-Proprietary, Inc. | Silicon nanoparticles embedded in polymer matrix |
US6969897B2 (en) | 2002-12-10 | 2005-11-29 | Kim Ii John | Optoelectronic devices employing fibers for light collection and emission |
US7371666B2 (en) | 2003-03-12 | 2008-05-13 | The Research Foundation Of State University Of New York | Process for producing luminescent silicon nanoparticles |
US7199395B2 (en) * | 2003-09-24 | 2007-04-03 | Sanyo Electric Co., Ltd. | Photovoltaic cell and method of fabricating the same |
US20050166953A1 (en) * | 2003-11-20 | 2005-08-04 | Baldeschwieler John D. | Solar energy concentrator |
JP4950047B2 (en) | 2004-07-22 | 2012-06-13 | ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ | Method for growing germanium and method for manufacturing semiconductor substrate |
US20060213779A1 (en) | 2005-03-23 | 2006-09-28 | The Board Of Trustees Of The University Of Illinois And The University Of Jordan | Silicon nanoparticle formation by electrodeposition from silicate |
WO2007016080A2 (en) | 2005-07-26 | 2007-02-08 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle formation from silicon powder and hexacholorplatinic acid |
EP1908112A2 (en) | 2005-07-26 | 2008-04-09 | The University of Jordan | Hexachloroplatinic acid assisted silicon nanoparticle formation method |
US9263600B2 (en) | 2005-11-10 | 2016-02-16 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle photovoltaic devices |
US8076410B2 (en) | 2007-10-04 | 2011-12-13 | Nanosi Advanced Technologies, Inc. | Luminescent silicon nanoparticle-polymer composites, composite wavelength converter and white LED |
US9475985B2 (en) | 2007-10-04 | 2016-10-25 | Nanosi Advanced Technologies, Inc. | Nanosilicon-based room temperature paints and adhesive coatings |
-
2006
- 2006-11-09 US US12/084,611 patent/US9263600B2/en active Active
- 2006-11-09 BR BRPI0618291-7A patent/BRPI0618291A2/en not_active Application Discontinuation
- 2006-11-09 EP EP06851754A patent/EP1949452A2/en not_active Withdrawn
- 2006-11-09 CN CNA200680042011XA patent/CN101405088A/en active Pending
- 2006-11-09 WO PCT/US2006/043808 patent/WO2008051235A2/en active Application Filing
Non-Patent Citations (1)
Title |
---|
See references of WO2008051235A3 * |
Also Published As
Publication number | Publication date |
---|---|
BRPI0618291A2 (en) | 2011-08-30 |
CN101405088A (en) | 2009-04-08 |
WO2008051235A3 (en) | 2008-09-25 |
WO2008051235A9 (en) | 2008-07-24 |
US20090308441A1 (en) | 2009-12-17 |
US9263600B2 (en) | 2016-02-16 |
WO2008051235A2 (en) | 2008-05-02 |
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