CN210956668U - Bridge arm unit of power semiconductor module - Google Patents
Bridge arm unit of power semiconductor module Download PDFInfo
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- CN210956668U CN210956668U CN201921654191.8U CN201921654191U CN210956668U CN 210956668 U CN210956668 U CN 210956668U CN 201921654191 U CN201921654191 U CN 201921654191U CN 210956668 U CN210956668 U CN 210956668U
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- metal coating
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- metallization
- bridge arm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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Abstract
The utility model discloses a power semiconductor module's bridge arm unit, its characterized in that, including upper bridge arm unit, lower bridge arm unit, UNICOM connecting device and substrate, upper bridge arm unit reaches lower bridge arm unit sets up on the substrate, upper bridge arm unit with lower bridge arm unit symmetrical setting; adopt the utility model discloses a power semiconductor module's bridge arm unit arranges gate pole signal terminal in the symmetric center position, has realized the equilibrium of control circuit stray parameter under the multicore piece parallel condition to effectively reduced stray parameter's absolute value.
Description
Technical Field
The utility model relates to a power semiconductor especially relates to a power semiconductor module's bridge arm unit.
Background
At present, a power semiconductor module generally adopts a multi-chip parallel connection mode to improve power output capacity, and the consistency degree of the switching characteristics among parallel chips is directly related to the operation stability of the power semiconductor module. The switching characteristics of the power semiconductor chips used in parallel are mainly determined by the voltage between the control electrodes and the sources, and can be represented by the voltages at two ends of capacitors Cgs1, Cgs2 and Cgs3 in an equivalent circuit model of an internal driving circuit of the three-chip parallel module, Tg and Ts are respectively a gate signal terminal and a source signal terminal which are connection ends of the power semiconductor module and an external driving circuit, Rg0 and Lg0 are stray resistance and stray inductance of a common part of three chip driving circuits, and Rg1 and Lg1, Rg2 and Lg2, Rg3 and Lg3 are stray resistance and stray inductance of independent parts of the three chip driving circuits. The stray parameters are determined by the arrangement mode of a driving path and a signal terminal inside the module, and when a power module substrate is designed, in order to ensure that the voltage between control electrodes of parallel chips is consistent and the response speed to a driving signal is high, the driving path and the signal terminal need to be optimally designed, so that the stray parameters of a common part of a driving circuit are as small as possible, and the stray parameters of an independent part are balanced as much as possible.
Aiming at the problems in the prior art, the bridge arm unit of the power semiconductor module is provided, and the bridge arm unit has important significance.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, the utility model provides a power semiconductor module's bridge arm unit.
In order to achieve the above object, the bridge arm unit of the power semiconductor module of the present invention includes an upper bridge arm unit, a lower bridge arm unit, a communication connection device, and a substrate, wherein the upper bridge arm unit and the lower bridge arm unit are disposed on the substrate, and the upper bridge arm unit and the lower bridge arm unit are symmetrically disposed; the upper bridge arm unit comprises a first source signal terminal, a first gate signal terminal, a first power metal coating and a first auxiliary metal coating, wherein the first auxiliary metal coating and the first source signal terminal are arranged on the first power metal coating, the first auxiliary metal coating is arranged in the center of the upper bridge arm unit, the first auxiliary metal coating is provided with a first protruding structure, the first source signal terminal is arranged on one side far away from the first protruding structure, and the first gate signal terminal is arranged on the first auxiliary metal coating; the lower bridge arm unit comprises a second source electrode signal terminal, a second gate electrode signal terminal, a second power metal coating and a second auxiliary metal coating, the second auxiliary metal coating and the second source electrode signal terminal are arranged on the second power metal coating, the second auxiliary metal coating is arranged in the center of the lower bridge arm unit, the second auxiliary metal coating is provided with a second protruding structure, the second source electrode signal terminal is arranged on one side far away from the second protruding structure, and the second gate electrode signal terminal is arranged on the second auxiliary metal coating;
furthermore, the upper bridge arm unit further comprises a third source signal terminal, and the third source signal terminal is arranged on one side close to the first protruding structure; the lower bridge arm unit further comprises a fourth source signal terminal symmetrical to the third source signal terminal, and the fourth source signal terminal is arranged on one side close to the second protruding structure;
further, the first protruding structures of the first auxiliary metallization layer protrude in a bottom direction of the substrate, and the second protruding structures of the second auxiliary metallization layer protrude in a top direction of the substrate;
further, the first protruding structures of the first auxiliary metallization layer protrude in a top direction of the substrate, and the second protruding structures of the second auxiliary metallization layer protrude in a bottom direction of the substrate;
further, the upper arm unit further includes a third power metallization, a fourth power metallization, a third auxiliary metallization, and a fourth auxiliary metallization, the third auxiliary metallization and the fourth auxiliary metallization being disposed on the left and right sides of the upper arm unit, respectively, the third auxiliary metallization being disposed between the third power metallization and the first power metallization, and the fourth auxiliary metallization being disposed between the fourth power metallization and the first power metallization; the lower bridge arm unit further comprises a fifth power metal coating, a sixth power metal coating, a fifth auxiliary metal coating and a sixth auxiliary metal coating which are symmetrical to the upper bridge arm unit, wherein the fifth auxiliary metal coating and the sixth auxiliary metal coating are respectively arranged on the left side and the right side of the lower bridge arm unit, the fifth auxiliary metal coating is arranged between the fifth power metal coating and the second power metal coating, and the sixth auxiliary metal coating is arranged between the sixth power metal coating and the second power metal coating;
furthermore, the same number of power semiconductor chips are arranged on the third power metal coating layer, the fourth power metal coating layer, the fifth power metal coating layer and the sixth power metal coating layer, connecting devices are arranged on the upper surface of each semiconductor chip to realize the electrical connection of the semiconductor chip and the adjacent power metal coating layer, and the lengths of the connecting devices of different chips are different;
furthermore, an alternating current terminal connecting part is arranged on the top of the substrate;
furthermore, the bottom of the substrate is also provided with a positive terminal connecting part and a negative terminal connecting part;
further, a first auxiliary connecting device is arranged on the first protruding structure, and the first auxiliary connecting device is connected with the third auxiliary metal coating layer and the fourth auxiliary metal coating layer; a second auxiliary connecting device is arranged on the second protruding structure, and the second auxiliary connecting device is connected with the fifth auxiliary metal coating layer and the sixth auxiliary metal coating layer.
The utility model discloses a bridge arm unit of power semiconductor module arranges gate pole signal terminal in the center of symmetry position, has realized the equilibrium of control circuit stray parameter under the multicore piece parallel condition to effectively reduced stray parameter's absolute value, and realized stray parameter's reduction and equilibrium.
Drawings
Fig. 1 is a schematic diagram of a first structure of a bridge arm unit of a power semiconductor module according to the present invention;
fig. 2 is a second schematic structural diagram of a bridge arm unit of the power semiconductor module according to the present invention;
fig. 3 is a third structural schematic diagram of a bridge arm unit of the power semiconductor module according to the present invention.
Detailed Description
The structure and operation of the present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, fig. 1 is a schematic diagram of a first structure of a bridge arm unit of a power semiconductor module according to the present invention, which includes an upper bridge arm unit 1, a lower bridge arm unit 2, a communication connection device 31 and a substrate 3, where the upper bridge arm unit 1 and the lower bridge arm unit 2 are disposed on the substrate 3, and the upper bridge arm unit 1 and the lower bridge arm unit 2 are symmetrically disposed; the upper bridge arm unit 1 comprises a first source signal terminal 11, a first gate signal terminal 12, a first power metallization 14 and a first auxiliary metallization 13, wherein the first auxiliary metallization 13 is isolated from the first power metallization 14, the first auxiliary metallization 13 and the first source signal terminal 11 are disposed on the first power metallization 14, the first auxiliary metallization 13 is disposed at a central position of the upper bridge arm unit 1, the first auxiliary metallization 13 is provided with a first protruding structure, the first protruding structure of the first auxiliary metallization 13 is protruding toward the bottom direction of the substrate 3, the first source signal terminal 11 is disposed at a side far away from the first protruding structure, and the first gate signal terminal 12 is disposed on the first auxiliary metallization 13; the first protruding formation of the first auxiliary metallization layer 13 is provided with first auxiliary connection means connected to the third auxiliary metallization layer 15 and the fourth auxiliary metallization layer 17, the first auxiliary connection means having a drop point located in the middle of the third auxiliary metallization layer 15 and the fourth auxiliary metallization layer 17, so as to electrically connect the first auxiliary metallization layer 13 to the third auxiliary metallization layer 15 and the fourth auxiliary metallization layer 17 with low stray parameters; the lower arm unit 2 includes a second source signal terminal 21, a second gate signal terminal 23, a second power metallization 24, and a second auxiliary metallization 22, the second auxiliary metallization 22 and the second source signal terminal 21 are disposed on the second power metallization 24, the second auxiliary metallization 22 is disposed at a central position of the lower arm unit 2, the second auxiliary metallization 22 is provided with a second protruding structure, the second protruding structure of the second auxiliary metallization 22 protrudes in a top direction of the substrate 3, the second source signal terminal 21 is disposed on a side away from the second protruding structure, and the second gate signal terminal 21 is disposed on the second auxiliary metallization 22; a second auxiliary connecting means is provided at a protruding position of the second auxiliary metallization layer 22 to connect the fifth auxiliary metallization layer 25 and the sixth auxiliary metallization layer 27, and a drop point of the second auxiliary connecting means is located at an intermediate position of the fifth auxiliary metallization layer 25 and the sixth auxiliary metallization layer 27 to electrically connect the second auxiliary metallization layer 22 with the fifth auxiliary metallization layer 25 and the sixth auxiliary metallization layer 27 with a low stray parameter.
The bridge arm unit of the power semiconductor module further comprises a communicating metal coating 32, and the communicating connecting device 31 is arranged on the communicating metal coating 32; the upper arm unit 1 further includes a third power metallization 16, a fourth power metallization 18, a third auxiliary metallization 15, and a fourth auxiliary metallization 17, the third auxiliary metallization 15 and the fourth auxiliary metallization 17 being respectively disposed on the left and right sides of the upper arm unit 1, the third auxiliary metallization 15 being disposed between the third power metallization 16 and the first power metallization 14, and the fourth auxiliary metallization 17 being disposed between the fourth power metallization 18 and the first power metallization 14; the lower arm unit 2 further includes a fifth power metallization 26, a sixth power metallization 28, a fifth auxiliary metallization 25, and a sixth auxiliary metallization 27, which are symmetrical to the upper arm unit, the fifth auxiliary metallization 25 and the sixth auxiliary metallization 27 are respectively disposed on the left and right sides of the lower arm unit 2, the fifth auxiliary metallization 25 is disposed between the fifth power metallization 26 and the second power metallization 24, and the sixth auxiliary metallization 27 is disposed between the sixth power metallization 28 and the second power metallization 24; the top of the substrate 3 is also provided with an alternating current terminal connection part 8; the bottom of the substrate 3 is also provided with a positive terminal connection part 10 and a negative terminal connection part 9; a plurality of pairs of power connection devices 7 are respectively arranged on the left side and the right side of the upper bridge arm unit 1 and the lower bridge arm unit 2, a power switch 6 is arranged on each power connection device 7, the third power metal coating 16, the fourth power metal coating 18, the fifth power metal coating 26 and the sixth power metal coating 28 are provided with a plurality of power switches 6, the upper bridge arm power switches are connected with the power switches 6 and the first power metal coating 14 through a plurality of power connection devices, the upper bridge arm power switches are connected with the control electrodes of the power switches 6 and the third auxiliary metal coating 15 and the fourth auxiliary metal coating 17 through a plurality of auxiliary connection devices, the lower bridge arm power switches are connected with the control electrodes of the power switches 6 and the second power metal coating 24 through a plurality of power connection devices, and the lower bridge arm power switches are connected with the control electrodes of the power switches 6 and the fifth auxiliary metal coating 17 through a plurality of auxiliary connection devices A metallization 25 and said sixth auxiliary metallization 27.
The utility model discloses a power semiconductor module's bridge arm unit has the same power semiconductor chip of quantity to arrange in third power metal coating 15, fourth power metal coating 17, fifth power metal coating 26 and sixth power metal coating 27, semiconductor chip upper surface has arranged connecting device in order to realize semiconductor chip is connected with the electricity of adjacent power metal coating, and the connecting device length of different chips is inconsistent.
In a preferred embodiment of the present invention, the number of the ac terminal connections is four, the number of the negative terminal connections is four, the negative terminal connection is disposed at the middle position of the bottom of the lower bridge arm unit, and the number of the positive terminal connections is two; the power switches are respectively provided with four, sixteen in total, on the left side and the right side of the upper bridge arm unit and the lower bridge arm unit, and each power switch is provided with a power connecting device.
As shown in fig. 2, fig. 2 is a schematic diagram of a second structure of the bridge arm unit of the power semiconductor module according to the present invention, in a preferred embodiment of the present invention, the upper bridge arm unit further includes a third source signal terminal 19, and the third source signal terminal 19 is disposed at a side close to the first protruding structure; the lower bridge arm unit further includes a fourth source signal terminal 29 symmetrical to the third source signal terminal, and the fourth source signal terminal 29 is disposed at a side close to the second protruding structure.
As shown in fig. 3, fig. 3 is a schematic diagram of a third structure of the bridge arm unit of the power semiconductor module according to the present invention, in another preferred embodiment of the present invention, the first auxiliary metal coating is provided with a first protruding structure, the first protruding structure of the first auxiliary metal coating protrudes toward the top of the substrate 3, the first source signal terminal is disposed on a side away from the first protruding structure, and the first gate signal terminal is disposed on the first auxiliary metal coating; said protruding structure being provided with first auxiliary connection means for connecting said first auxiliary metallization layer, said third metallization layer and said fourth auxiliary metallization layer, said first auxiliary connection means being arranged horizontally according to fig. 3 for enabling control signal transmission of the first auxiliary metallization layer with said third auxiliary metallization layer and said fourth auxiliary metallization layer with low spurious parameters; the lower bridge arm unit 2 comprises a second source electrode signal terminal, a second gate electrode signal terminal, a second power metal coating and a second auxiliary metal coating, the second auxiliary metal coating and the second source electrode signal terminal are arranged on the second power metal coating, the second auxiliary metal coating is arranged at the center of the lower bridge arm unit, the second auxiliary metal coating is provided with a second protruding structure, the second protruding structure of the second auxiliary metal coating protrudes towards the bottom direction of the substrate 3, the second source electrode signal terminal is arranged on one side far away from the second protruding structure, and the second gate electrode signal terminal is arranged on the second auxiliary metal coating; the second protruding structure is provided with second auxiliary connection means connecting the second auxiliary metallization layer, the fifth auxiliary metallization layer and the sixth auxiliary metallization layer, the second auxiliary connection means being arranged horizontally according to fig. 3, enabling control signal transmission of the second auxiliary metallization layer with the fifth auxiliary metallization layer and the sixth auxiliary metallization layer with low spurious parameters.
In a preferred embodiment of the present invention, the material of the power connection device may be a binding line, a strip, etc. made of materials such as aluminum and copper; the power switch is composed of power semiconductor chips, the power semiconductor chips composing the power switch are arranged in a row in parallel, the auxiliary metal coating extends to the corresponding position of a chip control electrode in parallel along the chip arrangement direction, control electrode auxiliary metal coatings with the same number as the chips can be arranged between the auxiliary metal coating and the power metal coating, a signal connecting device is connected with the chip control electrode and the control electrode auxiliary metal coating in parallel at the shortest distance, the control electrode auxiliary metal coatings and the auxiliary metal coating are connected through passive elements such as resistors, capacitors and inductors, and the power semiconductor chips comprise diodes, JFETs, MOSFETs, IGBTs and the like which are manufactured on the basis of semiconductor materials such as silicon, silicon carbide, gallium nitride and the like.
Above, only for the schematic description of the present invention, it should be known to those skilled in the art that the present invention can be modified in various ways without deviating from the working principle of the present invention, and this all belongs to the protection scope of the present invention.
Claims (10)
1. The bridge arm unit of the power semiconductor module is characterized by comprising an upper bridge arm unit, a lower bridge arm unit, a communication connecting device and a substrate, wherein the upper bridge arm unit and the lower bridge arm unit are arranged on the substrate and are symmetrically arranged;
the upper bridge arm unit comprises a first source signal terminal, a first gate signal terminal, a first power metal coating and a first auxiliary metal coating, wherein the first auxiliary metal coating and the first source signal terminal are arranged on the first power metal coating, the first auxiliary metal coating is arranged in the center of the upper bridge arm unit, the first auxiliary metal coating is provided with a first protruding structure, the first source signal terminal is arranged on one side far away from the first protruding structure, and the first gate signal terminal is arranged on the first auxiliary metal coating;
the lower bridge arm unit comprises a second source electrode signal terminal, a second gate electrode signal terminal, a second power metal coating and a second auxiliary metal coating, the second auxiliary metal coating and the second source electrode signal terminal are arranged on the second power metal coating, the second auxiliary metal coating is arranged in the center of the lower bridge arm unit, the second auxiliary metal coating is provided with a second protruding structure, the second source electrode signal terminal is arranged on one side far away from the second protruding structure, and the second gate electrode signal terminal is arranged on the second auxiliary metal coating.
2. The bridge leg unit of a power semiconductor module of claim 1, wherein the upper bridge leg unit further comprises a third source signal terminal disposed on a side adjacent to the first projection structure; the lower bridge arm unit further comprises a fourth source signal terminal symmetrical to the third source signal terminal, and the fourth source signal terminal is arranged on one side close to the second protruding structure.
3. The bridge leg unit of a power semiconductor module according to claim 1, wherein the first protruding structure of the first auxiliary metallization layer protrudes in a direction of a bottom of the substrate, and the second protruding structure of the second auxiliary metallization layer protrudes in a direction of a top of the substrate.
4. The bridge leg unit of a power semiconductor module according to claim 1, wherein the first protruding structure of the first auxiliary metallization layer protrudes in a top direction of the substrate, and the second protruding structure of the second auxiliary metallization layer protrudes in a bottom direction of the substrate.
5. The bridge leg unit of a power semiconductor module of claim 1, further comprising a communication metallization, said communication connection means being disposed on said communication metallization.
6. The leg unit of a power semiconductor module of claim 1, wherein the upper leg unit further comprises a third power metallization, a fourth power metallization, a third auxiliary metallization, and a fourth auxiliary metallization, the third auxiliary metallization and the fourth auxiliary metallization being disposed on the left and right sides of the upper leg unit, respectively, the third auxiliary metallization being disposed between the third power metallization and the first power metallization, and the fourth auxiliary metallization being disposed between the fourth power metallization and the first power metallization;
the lower bridge arm unit further comprises a fifth power metal coating, a sixth power metal coating, a fifth auxiliary metal coating and a sixth auxiliary metal coating which are symmetrical to the upper bridge arm unit, wherein the fifth auxiliary metal coating and the sixth auxiliary metal coating are respectively arranged on the left side and the right side of the lower bridge arm unit, the fifth auxiliary metal coating is arranged between the fifth power metal coating and the second power metal coating, and the sixth auxiliary metal coating is arranged between the sixth power metal coating and the second power metal coating.
7. The bridge leg unit of a power semiconductor module as claimed in claim 1, characterized in that a same number of power semiconductor chips are arranged on a third power metallization layer, a fourth power metallization layer, a fifth power metallization layer and a sixth power metallization layer, and that the upper surfaces of the semiconductor chips are provided with connection means for electrically connecting the semiconductor chips to adjacent power metallization layers, the connection means of different chips having different lengths.
8. The bridge leg unit of a power semiconductor module as claimed in claim 1, wherein an ac terminal connection is further provided on top of the substrate.
9. The bridge arm unit of a power semiconductor module according to claim 1, wherein the bottom of the substrate is further provided with a positive terminal connection site and a negative terminal connection site.
10. The bridge leg unit of a power semiconductor module according to claim 6, wherein a first auxiliary connecting means is provided at the first projection structure, the first auxiliary connecting means being connected to the third auxiliary metallization layer and the fourth auxiliary metallization layer; a second auxiliary connecting device is arranged on the second protruding structure, and the second auxiliary connecting device is connected with the fifth auxiliary metal coating layer and the sixth auxiliary metal coating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921654191.8U CN210956668U (en) | 2019-09-30 | 2019-09-30 | Bridge arm unit of power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921654191.8U CN210956668U (en) | 2019-09-30 | 2019-09-30 | Bridge arm unit of power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210956668U true CN210956668U (en) | 2020-07-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921654191.8U Active CN210956668U (en) | 2019-09-30 | 2019-09-30 | Bridge arm unit of power semiconductor module |
Country Status (1)
| Country | Link |
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| CN (1) | CN210956668U (en) |
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2019
- 2019-09-30 CN CN201921654191.8U patent/CN210956668U/en active Active
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