CN207625521U - A kind of overriding frequency RC oscillators of on piece low-temperature coefficient - Google Patents
A kind of overriding frequency RC oscillators of on piece low-temperature coefficient Download PDFInfo
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- CN207625521U CN207625521U CN201721827046.6U CN201721827046U CN207625521U CN 207625521 U CN207625521 U CN 207625521U CN 201721827046 U CN201721827046 U CN 201721827046U CN 207625521 U CN207625521 U CN 207625521U
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Abstract
The utility model is related to a kind of overriding frequency RC oscillators of on piece low-temperature coefficient, including partial pressure baseline network, comparator, crossed loops to shake and RC charge and discharge electric networks；The wherein inverting input of the output end connection comparator of partial pressure baseline network, the input terminal that the output end connection crossed loops of comparator shakes, the input terminal for the output end connection RC charge and discharge electric networks that crossed loops shakes, the in-phase input end of the output end connection comparator of RC charge and discharge electric networks.The utility model processing compatibility is good, is suitble to overwhelming majority integrated circuit fabrication process, frequency size that can trim, process allowance is preferable, and temperature-compensating means do not need particular device, other RC oscillating circuits of power dissipation ratio are small, and area is smaller than conventional crystal oscillating circuit.
Description
Technical field
The utility model is related to IC system field, specifically a kind of overriding frequency of on piece low-temperature coefficient
RC oscillators.
Background technology
It is higher and higher to the required precision of system clock with the development of on piece integrated circuit.The outer crystal oscillator frequency of piece is stablized
Absolute precision height has been spent, has been widely used in IC system, but the big cost high power consumption of the outer crystal oscillator volume of piece is also big.Usually
In the case of chip using internal oscillator situation it is more, at present internal oscillator generally use RC oscillators it is in the majority, RC oscillators
It is compatible to feel most of integrated circuit fabrication process, obtain very extensive application.
In integrated circuit fabrication process at this stage, characteristic dimension continuously decreases, this puies forward the design of on piece RC oscillators
New challenge is gone out.RC oscillators are to be realized by RC charge and discharge, therefore low characteristic size means that resistance R is varied with temperature more
The frequency of sensitivity, oscillator varies with temperature bigger.When the temperature varies, capacitor charge and discharge depends on resistance, RC times
Great variety will occur for constant, and oscillator frequency depends directly on time constant, if not carrying out temperature-compensating oscillation to circuit
It will be more than 10% that frequency changes in full warm area, and such frequency variation is very unfavorable in systems, and there is an urgent need for a kind of low temperature
Spend coefficients R C oscillators.
Utility model content
In view of the deficiencies of the prior art, the utility model provides a kind of overriding frequency RC oscillations of on piece low-temperature coefficient
Device.
The utility model technical solution used for the above purpose is：
A kind of overriding frequency RC oscillators of on piece low-temperature coefficient, including partial pressure baseline network, comparator, crossed loops shake
With RC charge and discharge electric networks；The wherein inverting input of the output end connection comparator of partial pressure baseline network, the output end of comparator
The input terminal that connection crossed loops shakes, the input terminal for the output end connection RC charge and discharge electric networks that crossed loops shakes, RC charge and discharge electric networks
Output end connects the in-phase input end of comparator.
The partial pressure baseline network includes：
The one end resistance R5 connects power vd D, output end of the other end as partial pressure baseline network；Resistance R6 and resistance R7 are simultaneously
Be connected to after connection partial pressure baseline network output end between.
The resistance R5 and resistance R6 is positive temperature coefficient resistor, and the R7 is negative temperature coefficient resister.
There are two the comparators, including first comparator A1 and the second comparator A2；Wherein first comparator A1 and
The inverting input of two comparator A2 is connected with each other, and forms reverse phase common end, and reverse phase common end connection partial pressure baseline network
Output end, the drain electrode of the in-phase input end connection metal-oxide-semiconductor M7 of first comparator A1, the in-phase input end of the second comparator A2 connects
Connect the drain electrode of metal-oxide-semiconductor M6.
The crossed loops shake including：
The drain electrode of the input terminal, metal-oxide-semiconductor M1 of phase inverter inv1 connects the output of first comparator A1 with the grid of metal-oxide-semiconductor M4
End, the input terminal of the output end connection phase inverter inv2 of phase inverter inv1, the output end connection phase inverter inv5 of phase inverter inv2
With the input terminal of phase inverter inv4, phase inverter inv4 pin connection metal-oxide-semiconductor M3 drain electrode, the source electrode ground connection of metal-oxide-semiconductor M3, reverse phase
The input terminal of the output end connection phase inverter inv3 of device inv4, the grid of the output end connection metal-oxide-semiconductor M1 of phase inverter inv3, MOS
The source electrode of pipe M1 is grounded, and phase inverter inv5 output ends are connect with the common end of phase inverter inv11 input terminals in RC charge and discharge electric networks
The output end of the grid common end of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6, phase inverter inv11 is the output of clk clocks；
The drain electrode of the input terminal, metal-oxide-semiconductor M2 of phase inverter inv7 connects the output of first comparator A1 with the grid of metal-oxide-semiconductor M3
End, the input terminal of the output end connection phase inverter inv9 of phase inverter inv7, the output end connection phase inverter inv10 of phase inverter inv9
With the input terminal of phase inverter inv8, in phase inverter inv8 pin connection metal-oxide-semiconductor M4 drain electrode, the source electrode ground connection of metal-oxide-semiconductor M4, instead
The input terminal of the output end connection phase inverter inv6 of phase device inv8, the grid of the output end connection metal-oxide-semiconductor M2 of phase inverter inv6,
The source electrode of metal-oxide-semiconductor M2 is grounded, and phase inverter inv10 output ends connect RC charge and discharge power grids with the common end of phase inverter inv12 input terminals
The output end of the grid common end of metal-oxide-semiconductor M7 and metal-oxide-semiconductor M8 in network, phase inverter inv12 is the output of clk clocks.
The RC charge and discharges electric network includes：
The source electrode of metal-oxide-semiconductor M5 meets power vd D, and drain electrode and the resistance R1 and resistance R2 of metal-oxide-semiconductor M5 are connected in series with, metal-oxide-semiconductor M6
Drain electrode connecting resistance R2 and the second comparator A2 in-phase input end, variable capacitance C1 and drain electrode and the source for being connected in metal-oxide-semiconductor M6
Pole；
The source electrode of metal-oxide-semiconductor M8 meets power vd D, and drain electrode and the resistance R4 and resistance R3 of metal-oxide-semiconductor M8 are connected in series with, metal-oxide-semiconductor M7
Drain electrode connecting resistance R3 and first comparator A1 in-phase input end, variable capacitance C2 and drain electrode and the source for being connected in metal-oxide-semiconductor M7
Pole.
The resistance R1 and resistance R4 is positive temperature coefficient resistor；The resistance R2 and resistance R3 is negative temperature coefficient electricity
Resistance.
The capacitance size of the variable capacitance C1 and variable capacitance C2 is controlled by data/address bus.
The utility model has the advantages that and advantage：
1. the utility model processing compatibility is good, it is suitble to overwhelming majority integrated circuit fabrication process；
2. the utility model frequency size can trim, process allowance is preferable；
3. the utility model temperature-compensating means do not need particular device；
4. other RC oscillating circuits of the utility model power dissipation ratio are small；
5. the utility model area is smaller than conventional crystal oscillating circuit；
6. the utility model comparator A1 is with A2 load pipes using drain electrode cross-coupled manner, comparator output is using high speed
Small amplitude of oscillation design, when comparator works, speed can promote delay and can be greatly reduced；
7. resistance R can reduce MOS working conditions in the utility model comparator, metal-oxide-semiconductor resistance is only operated in cut-off region
With amplification region, metal-oxide-semiconductor, which is not moved back into linear zone, reduces MOS work recovery times, improves cross-couplings plumber in comparator
Make speed；
8. the utility model RC charge and discharge electric networks can reduce oscillation frequency temperature coefficient using Positive and Negative Coefficient Temperature resistance,
Partial pressure baseline network is related to temperature can to further decrease oscillation frequency temperature coefficient, and partial pressure baseline network uses T-type resistance
Network, every branch uses different temperature coefficients resistance, reference voltage output temperature coefficient that can adjust reality in T-type resistor network
Now frequency of oscillation is compensated.
Description of the drawings
Fig. 1 is the structure diagram of the utility model；
Fig. 2 is the circuit connection diagram of the utility model；
Fig. 3 is the comparator circuit figure of the utility model；
Fig. 4 is the numerical control variable capacitance circuit figure of the utility model；
Fig. 5 is the comparator offset circuit diagram of the utility model.
Specific implementation mode
The utility model is described in further detail with reference to the accompanying drawings and embodiments.
It is the structure diagram that Fig. 1 is the utility model as shown in Figure 1.
The overriding frequency RC oscillators of on piece low-temperature coefficient, including comparator, crossed loops shake, RC charge and discharges electric network and point
Press baseline network.
Comparator is according to RC charge and discharges electric network and divides baseline network to judge output voltage height, and is handed over this to control
Fork ring shakes network state, and crossed loops vibrating network exports low and high level and controls RC charge and discharge electric networks, RC charge and discharge network output quilts
It feeds back to comparator input terminal and positive feedback is integrally formed, back and forth above-mentioned working condition forms oscillation to circuit system.
Comparator A1, A2 output control crossed loops vibrating network, crossed loops network internal of shaking are made of two chain of inverters,
Middle inv11 and inv12 is output terminal of clock.Inv1 to inv5 and inv6 to inv9 forms positive feedback loop in crossed loops vibrating network
Road helps to reduce ring oscillation road delay time, promotes frequency stability.Metal-oxide-semiconductor M1-M4 plays drop-down to key node,
Phase inverter inv3 and inv10 is responsible for pushing RC charge-discharge circuits.
When comparator A1 and A2 input terminals are more than that the output of reference voltage comparator is overturn.Supply voltage passes through R1, R2
It charges to C1, C1 terminal voltages, which gradually rise comparator A2 input terminal voltages and synchronize, to be risen, and A2 is exported when being more than turn threshold
It overturns, M6 grid ends voltage is fallen C2 charge discharging resistings by low get higher after A2 overturnings.At this moment supply voltage fills C2 by R3, R4
Electric C2 terminal voltages, which gradually rise comparator A1 input terminal voltages and synchronize, to be risen, and A1 is exported and overturn when more than turn threshold, A1
M7 grid ends voltage is fallen C2 charge discharging resistings by low get higher after overturning, and circuit repeats the above process to form stable oscillation stationary vibration.
In integrated circuit fabrication process, capacitance C1 and C2 is influenced very little by temperature change, and resistance is influenced by temperature change
It is very big, therefore resistance is connected using Positive and Negative Coefficient Temperature resistance in RC charge and discharge electric networks, R1, R2 and R3, R4.Metal-oxide-semiconductor M5, M6 with
M7, M8 constitute RC charge and discharge switch.
RC charge and discharge electric networks can reduce oscillation frequency temperature coefficient using Positive and Negative Coefficient Temperature resistance, cannot completely eliminate
Frequency-temperature coefficient.Oscillator frequency is also related with A2 reference voltages with comparator A1 in addition to related with RC charge and discharge electric networks.Point
Pressure baseline network is related to temperature can to further decrease oscillation frequency temperature coefficient, and partial pressure baseline network uses T-type resistance net
Network, every branch uses different temperature coefficients resistance, reference voltage output temperature coefficient that can adjust realization in T-type resistor network
Frequency of oscillation is compensated.
Fig. 2 is the circuit connection diagram of the utility model.
Oscillator integrated circuit figure, resistance R5 are connected to node 1 through power vd D, and resistance R6, R7 are connected in parallel on mutually node 1
Between GND, above-mentioned resistance is that partial pressure baseline network output node 1 has temperature characteristic compensation frequency of oscillation.
Partial pressure baseline network output node 1 is connected with comparator A1, A2 reverse phase common end, comparator A1 output ends connection section
Point 2, the connection of node 2 drain electrode of M1 pipes, the grid of M4 pipes, phase inverter inv1 input terminals, comparator A2 output ends connecting node 3,
Node 3 connects the drain electrode of M2 pipes, the grid of M3 pipes, phase inverter inv7 input terminals.Inv1 output ends are connected to inv2 input terminals
Node 4, inv7 output ends are connected to node 7 with inv9 input terminals.Inv2 output ends connect inv4, inv5 input terminal in node 8,
Inv9 output ends connect inv8, inv10 input terminal in node 9.Inv4 output ends are connected in node 5, inv4 with inv3 input terminals
Ground connects the electric leakage M3 pipe sources ground connection of M3 pipes.Inv8 output ends are connected in node 6 with inv6 input terminals, connect to inv8 M4 pipes
Electric leakage M4 pipe sources ground connection.Inv3 output ends connect M1 pipe grid M1 pipe drain terminals ground connection, and inv6 output ends connect M2 pipe grid M2 pipes
Drain terminal is grounded.
Inv5 output ends and inv11 input terminals are connected to node 11, and inv11 output ends are the output of clk clocks, node 11 with
M5, M6 grid end are connected.The ends inv10 enter end with inv12 and are connected to node 10, and node 10 is connected with M7, M8 grid end.M5 pipes drain terminal with
Positive temperature coefficient resistor R1 is connected to node 12, and M5 pipe sources connect power vd D.The positive temperature coefficient resistor R1 other ends and subzero temperature
Degree coefficient resistance R2 is connected to node 13, and the negative temperature coefficient resister R2 other ends connect the leakage of M6 pipes and connect ground in 17 source of node,
Variable capacitance C1 is in parallel with M6 pipe drain terminal sources, and node 17 is connect with comparator A2 in-phase input ends.M8 pipes leak electricity and positive temperature
Coefficient resistance R4 is connected to node 16, and M8 pipe sources connect power vd D.The positive temperature coefficient resistor R4 other ends and negative temperature coefficient
Resistance R3 is connected to node 14, and the negative temperature coefficient resister R3 other ends connect the leakage of M7 pipes and connect ground in 16 source of node, can power transformation
Appearance C2 is in parallel with M7 pipe drain terminal sources, and node 16 is connect with comparator A1 in-phase input ends.Variable capacitance C1, C2 size is by data
Bus B 1-B5 controls.
Fig. 3 is the comparator circuit figure of the utility model.
M19 drain terminals, M2 sources are connected to node 20, and M20 drain terminals, M4 sources are connected to node 21, and M5 drain terminals, M6 sources connect
It is connected to node 22, M16 drain terminals, M15 sources are connected to node 23.M2 drain-gates are connected, and the grid of M19, M2, M4, M6, M15 distinguish phase
It is connected in node 18, M4 drain terminals and the grid end of M20, M5, M16 are respectively connected in node 19.M6 drain terminals are connected to M7, M8 source
Node 24, M7 grid ends connecting node 1.M7 drain terminals, M9 drain terminals, M10 grid ends are connected to node 2, and M8 drain terminals are leaked with resistance R1, M11
End grid end is connected to node 26, and the resistance R1 other ends are connected to node 28 with M9 grid ends, M10 drain terminals.M15 drain terminals and M13, M14
Source is connected to node 25, M13 grid ends connecting node 1.M13 drain terminals, M18 drain terminals, M12 grid ends are connected to node 3, M14 leakages
End is connected to node 27 with resistance R2, M17 drain terminal grid end, and the resistance R2 other ends are connected to node 29 with M9 grid ends, M10 drain terminals.
M19, M20, M5, M16 source connect power vd D, M9, M10, M11, M12, M17, M18, source ground connection.
For comparator A1 with A2 load pipes using drain electrode cross-coupled manner, comparator output uses the small amplitude of oscillation design of high speed,
When comparator works, speed can promote delay and can be greatly reduced.
Resistance R can reduce MOS working conditions in comparator, and metal-oxide-semiconductor resistance is only operated in cut-off region and amplification region, MOS
Pipe, which is not moved back into linear zone, reduces MOS work recovery times, improves cross-couplings pipe operating rate in comparator.
Fig. 4 is the numerical control variable capacitance circuit figure of the utility model.
Variable capacitance is controlled by data/address bus B5-B1, and 37,38,39,40,41 capacitance size of capacitance meets 8421 rules
Arrangement, 42,43,44,45,46 capacitance size of capacitance also comply with the arrangement of 8421 rules, these capacitances are connect by MOS switch break-make
Enter in circuit system.
Capacitance C1 and C2 is variable capacitance, is switched over by digital control MOS switch, the size of capacitance C1 and C2 are simultaneously
It changes with digital control amount, clk output waveform duty ratios are 50%.Variable capacitance size presses binary-coded decimal distribution principle, each
Power capacitance is made of base unit capacitance, and base unit capacitance size equal areas is consistent.The capacitance size of different power and positions is pressed
8421 principles are distributed, each power and position is formed in parallel by specific capacitance ensures that the linearity is consistent.
Fig. 5 is comparator offset circuit diagram in the utility model.
M19 drain terminals and M20 sources are connected in node 32, and M20 drain terminals and M5 drain terminal grid ends are connected to node 30, resistance R1 with
The M1 source connecting node 36R1 other ends are grounded, and M6 drain terminals are connected to node 31 with M4 drain terminals, and M6 grid ends are connected to M5 grid ends
Node 30, M4 sources are connected to node 33 with M2 drain terminals, and M7 sources are connected to node 34, M8 sources and M9 drain terminals with M10 drain terminals
It is connected to node 35, M18, M19 drain terminal connect node 18,19 respectively, and M4, M7, M8 grid terminated nodes 31, M2, M9, M9 grid end connect section
Point 33, M2, M9, M10 source ground connection, M5, M6 source meet power vd D.
Claims (8)
1. a kind of overriding frequency RC oscillators of on piece low-temperature coefficient, which is characterized in that including partial pressure baseline network, compare
Device, crossed loops shake and RC charge and discharge electric networks；The wherein inverting input of the output end connection comparator of partial pressure baseline network, compares
The input terminal that the output end connection crossed loops of device shakes, the input terminal for the output end connection RC charge and discharge electric networks that crossed loops shakes, RC fill
The in-phase input end of the output end connection comparator of discharge network.
2. the overriding frequency RC oscillators of on piece low-temperature coefficient according to claim 1, it is characterised in that：The partial pressure
Baseline network includes：
The one end resistance R5 connects power vd D, output end of the other end as partial pressure baseline network；After resistance R6 and resistance R7 parallel connections
Be connected to partial pressure baseline network output end between.
3. the overriding frequency RC oscillators of on piece low-temperature coefficient according to claim 2, it is characterised in that：The resistance
R5 and resistance R6 is positive temperature coefficient resistor, and the R7 is negative temperature coefficient resister.
4. the overriding frequency RC oscillators of on piece low-temperature coefficient according to claim 1, it is characterised in that：The comparison
There are two devices, including first comparator A1 and the second comparator A2；The reverse phase of wherein first comparator A1 and the second comparator A2
Input terminal is connected with each other, and forms reverse phase common end, and the output end of reverse phase common end connection partial pressure baseline network, first compares
The drain electrode of the in-phase input end connection metal-oxide-semiconductor M7 of device A1, the drain electrode of the in-phase input end connection metal-oxide-semiconductor M6 of the second comparator A2.
5. the overriding frequency RC oscillators of on piece low-temperature coefficient according to claim 1, it is characterised in that：The intersection
Ring shake including：
The drain electrode of the input terminal, metal-oxide-semiconductor M1 of phase inverter inv1 connects the output end of first comparator A1 with the grid of metal-oxide-semiconductor M4,
The input terminal of the output end connection phase inverter inv2 of phase inverter inv1, the output end connection phase inverter inv5 of phase inverter inv2 and anti-
The input terminal of phase device inv4, phase inverter inv4 pin connection metal-oxide-semiconductor M3 drain electrode, the source electrode ground connection of metal-oxide-semiconductor M3, phase inverter
The input terminal of the output end connection phase inverter inv3 of inv4, the grid of the output end connection metal-oxide-semiconductor M1 of phase inverter inv3, metal-oxide-semiconductor
The source electrode of M1 is grounded, and phase inverter inv5 output ends connect MOS in RC charge and discharge electric networks with the common end of phase inverter inv11 input terminals
The output end of the grid common end of pipe M5 and metal-oxide-semiconductor M6, phase inverter inv11 is the output of clk clocks；
The drain electrode of the input terminal, metal-oxide-semiconductor M2 of phase inverter inv7 connects the output end of first comparator A1 with the grid of metal-oxide-semiconductor M3,
The input terminal of the output end connection phase inverter inv9 of phase inverter inv7, the output end connection phase inverter inv10 of phase inverter inv9 and
The input terminal of phase inverter inv8, in phase inverter inv8 pin connection metal-oxide-semiconductor M4 drain electrode, the source electrode ground connection of metal-oxide-semiconductor M4, reverse phase
The input terminal of the output end connection phase inverter inv6 of device inv8, the grid of the output end connection metal-oxide-semiconductor M2 of phase inverter inv6, MOS
The source electrode of pipe M2 is grounded, and phase inverter inv10 output ends are connect with the common end of phase inverter inv12 input terminals in RC charge and discharge electric networks
The output end of the grid common end of metal-oxide-semiconductor M7 and metal-oxide-semiconductor M8, phase inverter inv12 is the output of clk clocks.
6. the overriding frequency RC oscillators of on piece low-temperature coefficient according to claim 1 or 5, it is characterised in that：It is described
RC charge and discharge electric networks include：
The source electrode of metal-oxide-semiconductor M5 meets power vd D, and drain electrode and the resistance R1 and resistance R2 of metal-oxide-semiconductor M5 are connected in series with, the leakage of metal-oxide-semiconductor M6
The in-phase input end of pole connecting resistance R2 and the second comparator A2, variable capacitance C1 and drain electrode and the source electrode for being connected in metal-oxide-semiconductor M6；
The source electrode of metal-oxide-semiconductor M8 meets power vd D, and drain electrode and the resistance R4 and resistance R3 of metal-oxide-semiconductor M8 are connected in series with, the leakage of metal-oxide-semiconductor M7
The in-phase input end of pole connecting resistance R3 and first comparator A1, variable capacitance C2 and drain electrode and the source electrode for being connected in metal-oxide-semiconductor M7.
7. the overriding frequency RC oscillators of on piece low-temperature coefficient according to claim 6, it is characterised in that：The resistance
R1 and resistance R4 is positive temperature coefficient resistor；The resistance R2 and resistance R3 is negative temperature coefficient resister.
8. the overriding frequency RC oscillators of on piece low-temperature coefficient according to claim 6, it is characterised in that：It is described variable
The capacitance size of capacitance C1 and variable capacitance C2 is controlled by data/address bus.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721827046.6U CN207625521U (en) | 2017-12-25 | 2017-12-25 | A kind of overriding frequency RC oscillators of on piece low-temperature coefficient |
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| CN201721827046.6U CN207625521U (en) | 2017-12-25 | 2017-12-25 | A kind of overriding frequency RC oscillators of on piece low-temperature coefficient |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109525197A (en) * | 2018-11-28 | 2019-03-26 | 中国电子科技集团公司第四十七研究所 | Overriding high-precision rc oscillator |
| CN111478669A (en) * | 2020-04-13 | 2020-07-31 | 上海芯跳科技有限公司 | High-precision circuit for RC oscillator |
-
2017
- 2017-12-25 CN CN201721827046.6U patent/CN207625521U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109525197A (en) * | 2018-11-28 | 2019-03-26 | 中国电子科技集团公司第四十七研究所 | Overriding high-precision rc oscillator |
| CN109525197B (en) * | 2018-11-28 | 2022-09-13 | 中国电子科技集团公司第四十七研究所 | High-precision RC oscillator capable of being modified and adjusted |
| CN111478669A (en) * | 2020-04-13 | 2020-07-31 | 上海芯跳科技有限公司 | High-precision circuit for RC oscillator |
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