CN206517381U - A kind of level protection circuit of I types three - Google Patents
A kind of level protection circuit of I types three Download PDFInfo
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- CN206517381U CN206517381U CN201621404882.9U CN201621404882U CN206517381U CN 206517381 U CN206517381 U CN 206517381U CN 201621404882 U CN201621404882 U CN 201621404882U CN 206517381 U CN206517381 U CN 206517381U
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Abstract
The utility model provides a kind of level protection circuit of I types three, including gate pole protection circuit, active clamp protection circuit, short-circuit protection circuit and driving and soft switching protection circuit；The short-circuit protection circuit is connected with IGBT colelctor electrode and connected with the driving and soft breaking circuit; the gate pole protection circuit is connected between the driving and soft breaking circuit and IGBT gate pole, and the active clamp protection circuit is arranged between IGBT gate pole and colelctor electrode.Managed inside the Pass after first passing through short-circuit protection circuit and the first pipe outside the Pass of gate pole protection circuit realization; then the double protection functions with active clamp circuit are protected using soft switching; overvoltage stress when turning off each IGBT of the level of I types three all without the normal range of operation more than IGBT so that each IGBT and diode of the level of I types three can normal turn-off without being damaged.
Description
Technical field
The utility model is related to protection of circuit field, more particularly to a kind of level protection circuit of I types three.
Background technology
With the increasingly exhausted of global energy, it is necessary to create a new basis for global energy supply, regenerative resource
Using being one of key issue.Solar energy is to use a kind of relatively broad regenerative resource at present, photovoltaic system load
The important task for converting the solar into electric energy is born, and there are huge technical optimization potentiality in photovoltaic DC-to-AC converter therein.
With it is traditional be usually used in two level topological structures of photovoltaic DC-to-AC converter compared with, three-level inverter is with its output voltage
Closer to sine wave, voltage and current harmonic content is few, switching device voltage stress is small, switching frequency is low, switching loss is small etc.
Advantage is by more and more extensive concern and applies.
As three Level Technologies are more and more extensive in the application of photovoltaic art, photovoltaic DC-to-AC converter in the process of running would generally
There are various failures.When short trouble occurs for inverter, as long as traditional two Level Technologies detection is out of order, shut-off therein one
Individual switching tube, cut-out short-circuit loop can be carried out protection.And for the inverter of I type topological structures, to shut-off sequential
Have specific requirement, that is, need to follow and first manage outside the Pass, after pipe inside the Pass principle.In the protection circuit of prior art, although realize
" first manage outside the Pass, then manage inside the Pass ", but cannot ensure each IGBT (Insulated Gate Bipolar Transistor,
Insulated gate bipolar transistor) it can be carried out safely under overpressure situation caused by Short-Circuit High Current, system stray inductance are excessive
Turn off and protected.
Utility model content
The purpose of this utility model is to solve to cannot ensure each IGBT in Short-Circuit High Current, system in the prior art
The problem of being turned off and obtained safely protection under overpressure situation caused by stray inductance is excessive, proposes a kind of electricity of I types three
Flat protection circuit.
In order to solve the above technical problems, the utility model uses following technical scheme：
A kind of level protection circuit of I types three, including gate pole protection circuit, active clamp protection circuit, short-circuit protection circuit
With driving and soft switching protection circuit；The short-circuit protection circuit and IGBT colelctor electrode connection and with the driving and soft switching
Circuit connected in series, the gate pole protection circuit is connected between the driving and soft breaking circuit and IGBT gate pole, described active
Clamping protective circuit is arranged between IGBT gate pole and colelctor electrode；The gate pole protection circuit control IGBT's opening and closing
It is disconnected；The active clamp protection circuit is used to suppress overvoltage stress during IGBT shut-offs；The short-circuit protection circuit is used for
The IGBT that two ends in I type three-level inverter circuits are first closed during short circuit occurs for IGBT, then turns off the IGBT of centre；Institute
State driving and soft switching protection circuit be used for drive IGBT and realize IGBT it is soft open, soft switching.
Some preferred embodiment in, IGBT gate pole is in series with a pull-up clamp diode, rises and suppresses gate pole
The effect of voltage overshoot when opening.
In further preferred embodiment, a voltage-stabiliser tube is provided between IGBT gate pole and emitter stage, in door
The voltage that gate pole is opened, turned off is limited when pole is overshooted.
In embodiment still more preferably, provided with an electric capacity between IGBT gate pole and emitter stage, for pressing down
Oscillating waveform when gate pole processed is opened, turned off.
In more further preferred embodiment, a resistance, institute are additionally provided between IGBT gate pole and emitter stage
Resistance is stated in parallel with electric capacity, for providing discharge loop for the electric capacity.
Some preferred embodiment in, the active clamp protection circuit also include a reversal connection at negative voltage
Clamp diode, the current potential for the time limit active clamp protection circuit end of being failure to actuate in the active clamp protection circuit
Floating range.
Some preferred embodiment in, the active clamp protection circuit include first order active clamp protection circuit
With second level active clamp protection circuit.
Some preferred embodiment in, the gate pole protection circuit include open resistance, shut-off resistance, switch two poles
Pipe, the switching diode separates the conducting loop of open resistance and shut-off resistance.
Some preferred embodiment in, the short-circuit protection circuit include short-circuit detecting circuit, reference voltage adjust
The real-time voltage of the IGBT detected colelctor electrode is transported to comparator by circuit and comparator, the short-circuit detecting circuit, institute
Stating reference voltage regulation circuit is used to adjust the reference voltage of IGBT colelctor electrode and the reference voltage is transported into comparator, institute
Comparator is stated to be compared real-time voltage and reference voltage.
Some preferred embodiment in, it is described driving and soft switching protection circuit include drive circuit, soft switching electricity
Resistance, Support Capacitor, recommend triode and clamp diode；It is described to recommend triode and clamp diode bridge joint, the branch
Support electric capacity is arranged on two common ports for recommending triode and the clamp diode, and the soft switching resistant series are in institute
State drive circuit and between the Support Capacitor of negative voltage one end；The drive circuit includes the logic circuit being cascaded
And current-limiting resistance, the drive circuit provides drive signal for IGBT.
Compared with prior art, the beneficial effects of the utility model have：
First pass through short-circuit protection circuit and gate pole protection circuit realizes " first being managed inside the Pass after pipe outside the Pass ", then using soft switching
Protection and active clamp circuit double protection functions, make the level of I types three each IGBT turn off when overvoltage stress not
IGBT normal range of operation can be exceeded, so that it is guaranteed that each IGBT is caused by Short-Circuit High Current, system stray inductance are excessive
It can be turned off and be protected safely under overpressure situation.
In a preferred embodiment, the utility model also has the advantages that：
Further, by being in series with a pull-up clamp diode in IGBT gate pole, exceed in gate voltage open-minded
During voltage, pull-up clamp diode can be opened, makes gate voltage not over turning-on voltage, and then protect IGBT.
Further, a voltage-stabiliser tube is provided between IGBT gate pole and emitter stage so that positive and negative overshoot occurs in gate voltage
When open, turn off voltage all in control range.
Further, door can be suppressed to a certain extent provided with an electric capacity between IGBT gate pole and emitter stage
Extremely open oscillating waveform during shut-off；A resistance is additionally provided between IGBT gate pole and emitter stage, allow IGBT turn off when
Time can provide discharge loop for electric capacity.
Further, active clamp protection circuit also includes a clamp diode reversal connection at negative voltage, to ensure
When active clamp circuit is being failure to actuate, the current potential of its end will not float too severe.
Further, active clamp protection circuit includes first order active clamp protection circuit and second level active clamp is protected
Protection circuit, the voltage of IGBT colelctor electrode can be clamped down on repeatedly, to prevent the IGBT current potential of colelctor electrode too high.
Brief description of the drawings
A kind of original of the first embodiment for the level protection circuit of I types three that Fig. 1 provides for embodiment of the present utility model
Reason figure；
A kind of knot of the first embodiment for the level protection circuit of I types three that Fig. 2 provides for embodiment of the present utility model
Structure schematic diagram；
A kind of a kind of door of the embodiment for the level protection circuit of I types three that Fig. 3 provides for embodiment of the present utility model
The structural representation of pole protection circuit；
A kind of a kind of embodiment for the level protection circuit of I types three that Fig. 4 provides for the utility model embodiment it is active
The structural representation of clamping protective circuit；
A kind of a kind of short circuit of the embodiment for the level protection circuit of I types three that Fig. 5 provides for the utility model embodiment
The structural representation of protection circuit；
A kind of a kind of short circuit of the embodiment for the level protection circuit of I types three that Fig. 6 provides for the utility model embodiment
Detect the structural representation of circuit；
A kind of a kind of RC ginsengs of the embodiment for the level protection circuit of I types three that Fig. 7 provides for the utility model embodiment
Examine curve map；
A kind of a kind of driving of the embodiment for the level protection circuit of I types three that Fig. 8 provides for the utility model embodiment
And the structural representation of soft switching protection circuit；
A kind of knot of the second embodiment for the level protection circuit of I types three that Fig. 9 provides for embodiment of the present utility model
Structure schematic diagram；
A kind of knot of the 3rd embodiment for the level protection circuit of I types three that Figure 10 provides for embodiment of the present utility model
Structure schematic diagram；
A kind of knot of the 3rd embodiment for the level protection circuit of I types three that Figure 11 provides for embodiment of the present utility model
Structure schematic diagram；
A kind of knot of the 3rd embodiment for the level protection circuit of I types three that Figure 12 provides for embodiment of the present utility model
Structure schematic diagram；
A kind of knot of the fourth embodiment for the level protection circuit of I types three that Figure 13 provides for embodiment of the present utility model
Structure schematic diagram.
Embodiment
Embodiment of the present utility model is elaborated below.It is emphasized that the description below is only example
Property, rather than in order to limit scope of the present utility model and its application.
First embodiment
A kind of original of the first embodiment for the level protection circuit of I types three that Fig. 1 provides for embodiment of the present utility model
A kind of reason figure, the structure of the first embodiment for the level protection circuit of I types three that Fig. 2 provides for embodiment of the present utility model is shown
It is intended to, the x in accompanying drawing represents the subscript of x-th of IGBT in the level protection circuit of I types three.
As illustrated in fig. 1 and 2, in the level protection circuit of I types three, each IGBT protection circuit includes gate pole and protects electricity
Road 1, active clamp protection circuit 2, short-circuit protection circuit 3 and driving and soft switching protection circuit 4.As shown in Fig. 2 short-circuit protection
Circuit 3 is connected with IGBT colelctor electrode and connected with driving and soft breaking circuit 4, and gate pole protection circuit 1 is connected on driving and soft
Between breaking circuit 4 and IGBT gate pole, active clamp protection circuit 2 is arranged between IGBT gate pole and colelctor electrode.Wherein,
Ex represents to connect the end points of gate pole protection circuit 1, driving and soft breaking circuit 4 and short-circuit protection circuit 3, VISOx+, VISOx-
The positive voltage terminal and negative voltage side of the normal working voltage of IGBT gate poles are represented respectively, and SENSEx represents connection active clamp protection
Circuit 2 and driving and soft breaking circuit 4 recommend end.
As shown in Fig. 2 in the level protection circuit of I types three, when single tube short circuit, shoot through or bridgc arm short occur for IGBT
When, short-circuit protection circuit 3 is capable of detecting when short trouble, and sends fault-signal to driving and soft breaking circuit 4 in the short time
SOx, driving and soft breaking circuit 4 can block the previous stage drive signal of IGBT gate pole and control gate pole protection circuit 1 real
Now to IGBT shut-off, current drive signal slowly discharges in driving and soft breaking circuit 4, to slow down IGBT shut-off speed
Degree.The peak voltage that IGBT is produced when opening, turning off is very high, is very easy to damage.Because active clamp protects electricity
The presence on road 2, can suppress peak voltage during IGBT shut-offs, make IGBT collector and emitter will not be because of excessive pressure damages.
In other embodiments, such as Fig. 3, gate pole protection circuit 1 includes open resistance Rgon x1, Rgon x2, shut-off electricity
Hinder Rgoff x1, Rgoff x2, switching diode Don x and Doff x；Switching diode Don x and Doff x are controlled out respectively
Be powered resistance Rgon x1, Rgon x2 and shut-off resistance Rgoff x1, Rgoff x2 conducting loop.When control IGBT is opened, drive
Dynamic signal flows into after switching diode Don x the gate pole for flowing into IGBT by open resistance Rgon x1, Rgon x2 again.IGBT is closed
When disconnected, electric current is flowed into after switching diode Doff x again by turning off resistance Rgoff x1, Rgoff x2.
In other embodiments, such as Fig. 4, active clamp protection circuit 2 includes the He of first order active clamp protection circuit 201
Second level active clamp protection circuit 202.First order active clamp protection circuit 201 includes 3 colelctor electrodes for being connected on IGBT
TVS (TRANSIENT VOLTAGE SUPPRESSOR, transient voltage suppressor) pipe TVSx1, TVSx2, TVSx3 and
It is connected on clamp diode Ds x1, the resistance RxI1 of IGBT gate pole.Second level active clamp protection circuit 202 includes one
It is connected on the resistance RxI2 between the end of first order active clamp protection circuit 201 and driving and soft switching protection circuit.When
IGBT collector potentials it is too high and more than active clamp protection circuit rotection thresholds when, TVS pipe TVSx1, TVSx2, TVSx3 meeting
It is breakdown, the gate pole that electric current I1 first flows into IGBT is had, the current potential of gate pole obtains a certain degree of lifting, so that cut-off current
Will not be excessively precipitous.If the electric current for puncturing TVS pipe is larger, some electric current I2 can flow into driving and soft switching protection electricity
Road 4, I2 is further amplified, and is made the degree of gate potentials lifting some larger, is made cut-off current smaller, IGBT colelctor electrode electricity
Position is lower.Due to the presence of this two-stage active clamp, the voltage of colelctor electrode can be clamped down on repeatedly, and then ensure that IGBT will not be damaged
It is bad.
In other embodiments, such as Fig. 5, short-circuit protection circuit 3 includes short-circuit detecting circuit 310, reference voltage regulation electricity
Road 320 and comparator 330.Short-circuit detecting circuit 310 is connected on IGBT colelctor electrode with reference voltage regulation circuit 320.It is short
Alignment detection circuit 310 is by the real-time voltage V of the IGBT detected colelctor electrodecesatxComparator 330 is transported to, reference voltage is adjusted
Economize on electricity road is used for the reference voltage V for adjusting IGBT colelctor electroderefAnd by reference voltage VrefxComparator 330 is transported to, is compared
Device 330 is by real-time voltage VcesatWith reference voltage VrefIt is compared.If real-time voltage VcesatxHigher than reference voltage Vref, than
Fault-signal SO is sent compared with device 330xTo driving and soft breaking circuit 4.
In a further embodiment, such as Fig. 6, short-circuit detecting circuit 310 includes two poles of high pressure two being cascaded
Pipe Dh1x and Dh2x, resistance Rcx, electric capacity CCx, reference voltage regulation circuit 320 include the resistance Rx and electric capacity being connected in parallel
Cx.Resistance Rx regulation reference voltages Vref, according to Fig. 7 RC reference curves, reference can be changed by adjusting resistance Rx and electric capacity Cx
Time tref, with reference to following table, so as to realize that IGBT is turned off in 10uS, IGBT will not be damaged because of the further generation of short circuit.
For this topological structure of the level of I types three, when occurring various types of short troubles in systems, outer tube ginseng is necessarily had
With it is therein.Change reference time t by adjusting resistance Rx and electric capacity Cxref, the short-circuit detecting and guard time of outer tube are than interior
Pipe it is shorter.So, when occurring short circuit, the short circuit fault signal SOx of outer tube can be first detected, and outer tube is carried out
Soft switching.Outer tube was turned off after a period of time, and short circuit current flow can be reduced a lot, now detected the fault-signal SOx of inner tube, and right
Inner tube is carried out after soft switching, and due to voltage spikes will be very small.By it is this it is inexpensive simplify circuit, realize well short
The principle of this topological structure of the level of I types three " first manage, then manage inside the Pass outside the Pass " during the failure of road, it is ensured that each IGBT safety pass
It is disconnected.
| Reference voltage Vref | RXResistance | CX=0pF | CX=100pF | CX=220pF | CX=470pF | CX=1nF |
| 2V | RX=2k Ω | 0.5μs | 1.5μs | 3μs | 5μs | 7μs |
| 4V | RX=5.4k Ω | 1μs | 3μs | 4μs | 9μs | |
| 6V | RX=12k Ω | 1μs | 4μs | 6μs | ||
| 8V | RX=32k Ω | 1μs | 5μs | 7μs | ||
| 9V | RX=70k Ω | 1μs | 5μs | 7μs |
In other embodiments, such as Fig. 8, driving and soft switching protection circuit 4 include drive circuit 410, soft switching resistance
Rssdx, two Support Capacitor Ce1x, Ce2x, recommend triode 420 and clamp diode 430.Recommend triode 420 and clamper
Diode 430 is bridged, and two Support Capacitors Ce1x, Ce2x, which are connected respectively to, recommends the two of triode 420 and clamp diode 430
Individual common port P1x, P2x, soft switching resistance Rssdx are connected on institute's drive circuit 410 and the branch positioned at negative voltage VISOx- one end
Between support electric capacity Ce2x.Drive circuit 410 includes the logic circuit 411 and current-limiting resistance Rmix being cascaded, drive circuit
410 provide drive signal for IGBT.When logic circuit 411 receives failure SO x, the drive signal of gate-drive previous stage
It can be blocked, now gate electrode drive signals can slowly be discharged by soft switching resistance Rssdx, slow down IGBT turn-off speed, from
And reduce peak voltage when IGBT is turned off, it is further ensured that IGBT shut-off in safe range.
It can be seen from the above, in IGBT short trouble occurs for the level protection circuit of I types three in the application
When, overvoltage stress when can realize the soft switching to IGBT rapidly and ensure each IGBT shut-offs is all without more than IGBT just
Normal working range.
Second embodiment
Such as Fig. 9, on the basis of some embodiments, a pull-up clamp diode Dtx is in series with IGBT gate pole.
When gate voltage exceedes turning-on voltage VISOx+, diode Dtx can be opened, and such gate voltage would not exceed VISOx
+, so as to protect IGBT.
3rd embodiment
Such as Figure 10, on the basis of some embodiments, a voltage-stabiliser tube is set between IGBT gate pole and emitter stage
ZDx.When positive and negative overshoot occurs in gate voltage, voltage-stabiliser tube ZD x can be worked, and the voltage for open gate pole, turning off all is controlled
In normal range of operation.
In a further embodiment, such as Figure 11, provided with an electric capacity Cgex between IGBT gate pole and emitter stage.This
Sample, oscillating waveform when gate pole opens shut-off can be suppressed by electric capacity Cgex.
In a still further embodiment, such as Figure 12, a resistance Rgex is additionally provided between IGBT gate pole and emitter stage,
It is in parallel with electric capacity Cgex.When IGBT is turned off, the Miller effect occurs in electric capacity Cgex, and resistance Rgex presence is just Miller
Electric capacity Cgex provides discharge loop.
Fourth embodiment
Such as Figure 13, on the basis of some embodiments, a reversal connection is added in active clamp protection circuit 2 in negative electricity
Clamp diode Dsx2 at pressure side VISOx-, so may insure when active clamp protection circuit 2 is failure to actuate, active
Negative voltage side can be limited in when the end A of clamping protective circuit 2 potential fluctuation.
Above content is to combine specific/further description for preferred embodiment being made to the application, it is impossible to recognized
The specific implementation for determining the application is confined to these explanations.For the application person of an ordinary skill in the technical field,
On the premise of the application design is not departed from, it can also make some replacements or modification to the embodiment that these have been described,
And these are substituted or variant should all be considered as belonging to the protection domain of the application.
Claims (10)
1. a kind of level protection circuit of I types three, it is characterised in that including gate pole protection circuit, active clamp protection circuit, short circuit
Protection circuit and driving and soft switching protection circuit；The short-circuit protection circuit and IGBT colelctor electrode connection and with the driving
And soft breaking circuit is connected, the gate pole protection circuit is connected between the driving and soft breaking circuit and IGBT gate pole,
The active clamp protection circuit is arranged between IGBT gate pole and colelctor electrode；The gate pole protection circuit control IGBT's opens
Logical and shut-off；The active clamp protection circuit is used to suppress overvoltage stress during IGBT shut-offs；The short-circuit protection circuit
IGBT for first closing two ends in I type three-level inverter circuits when short circuit occurs for IGBT, then turns off centre
IGBT；It is described driving and soft switching protection circuit be used for drive IGBT and realize IGBT it is soft open, soft switching.
2. the level protection circuit of I types three according to claim 1, it is characterised in that IGBT gate pole is in series with a pull-up
Clamp diode, plays a part of to suppress voltage overshoot when gate pole is opened.
3. the level protection circuit of I types three according to claim 1 or 2, it is characterised in that IGBT gate pole and emitter stage it
Between provided with voltage-stabiliser tube, for when gate pole is overshooted limitation gate pole open, turn off when voltage.
4. the level protection circuit of I types three according to claim 3, it is characterised in that between IGBT gate pole and emitter stage
Provided with an electric capacity, oscillating waveform when opening, turning off for suppressing IGBT gate pole.
5. the level protection circuit of I types three according to claim 4, it is characterised in that between IGBT gate pole and emitter stage
A resistance is additionally provided with, the resistance is in parallel with the electric capacity, for providing discharge loop for the electric capacity.
6. the level protection circuit of I types three according to claim 1, it is characterised in that the active clamp protection circuit is also
Including a clamp diode reversal connection at negative voltage, for being formed with source in active clamp protection circuit time limit of being failure to actuate
The floating range of the current potential of clamping protective circuit end.
7. the level protection circuit of I types three according to claim 1, it is characterised in that the active clamp protection circuit bag
Include first order active clamp protection circuit and second level active clamp protection circuit.
8. the level protection circuit of I types three according to claim 1, it is characterised in that the gate pole protection circuit includes opening
Be powered resistance, shut-off resistance, switching diode, and the switching diode separates the conducting loop of open resistance and shut-off resistance.
9. the level protection circuit of I types three according to claim 1, it is characterised in that the short-circuit protection circuit includes short
Alignment detection circuit, reference voltage regulation circuit and comparator, the short-circuit detecting circuit is by the IGBT detected colelctor electrode
Real-time voltage is transported to comparator, and the reference voltage regulation circuit is used for the reference voltage for adjusting IGBT colelctor electrode and should
Reference voltage is transported to comparator, and real-time voltage and reference voltage are compared by the comparator.
10. the level protection circuit of I types three according to claim 1,2, any one of 5-9, it is characterised in that the driving and
Soft switching protection circuit includes drive circuit, soft switching resistance, Support Capacitor, recommends triode and clamp diode；It is described to push away
Draw triode and clamp diode bridge joint, the Support Capacitor, which is arranged on, described recommends triode and the clamp diode
Two common ports, the soft switching resistant series are in the drive circuit and between the Support Capacitor of negative voltage one end；
The drive circuit includes the logic circuit and current-limiting resistance being cascaded, and the drive circuit provides driving letter for IGBT
Number.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621404882.9U CN206517381U (en) | 2016-12-20 | 2016-12-20 | A kind of level protection circuit of I types three |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621404882.9U CN206517381U (en) | 2016-12-20 | 2016-12-20 | A kind of level protection circuit of I types three |
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| CN206517381U true CN206517381U (en) | 2017-09-22 |
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| CN201621404882.9U Active CN206517381U (en) | 2016-12-20 | 2016-12-20 | A kind of level protection circuit of I types three |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947542A (en) * | 2017-12-20 | 2018-04-20 | 西安中车永电电气有限公司 | A kind of driving circuit device of two-stage clamper |
| CN108592343A (en) * | 2018-03-28 | 2018-09-28 | 广东美的制冷设备有限公司 | IGBT pipe gate electrode resistances adjust circuit and air conditioner |
| CN109672149A (en) * | 2019-01-24 | 2019-04-23 | 上海大学 | A kind of hybrid detection protection circuit and method for NPC three-level current transformer over current fault |
| CN110649831A (en) * | 2019-05-10 | 2020-01-03 | 阳光电源股份有限公司 | Shutdown wave-sealing control method of multi-level inverter circuit and application device thereof |
| CN111049408A (en) * | 2020-01-06 | 2020-04-21 | 山东华天电气有限公司 | I-type three-level driving time sequence protection circuit |
| CN111276941A (en) * | 2020-02-23 | 2020-06-12 | 霍煜 | IGBT drive overcurrent protection and short-circuit protection system circuit |
| CN112290920A (en) * | 2020-09-23 | 2021-01-29 | 儒竞艾默生环境优化技术（上海）有限公司 | Driving system and method for dynamically adjusting gate voltage |
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2016
- 2016-12-20 CN CN201621404882.9U patent/CN206517381U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947542A (en) * | 2017-12-20 | 2018-04-20 | 西安中车永电电气有限公司 | A kind of driving circuit device of two-stage clamper |
| CN108592343A (en) * | 2018-03-28 | 2018-09-28 | 广东美的制冷设备有限公司 | IGBT pipe gate electrode resistances adjust circuit and air conditioner |
| CN108592343B (en) * | 2018-03-28 | 2020-07-03 | 广东美的制冷设备有限公司 | IGBT tube gate resistance adjusting circuit and air conditioner |
| CN109672149A (en) * | 2019-01-24 | 2019-04-23 | 上海大学 | A kind of hybrid detection protection circuit and method for NPC three-level current transformer over current fault |
| CN110649831A (en) * | 2019-05-10 | 2020-01-03 | 阳光电源股份有限公司 | Shutdown wave-sealing control method of multi-level inverter circuit and application device thereof |
| US11424694B2 (en) | 2019-05-10 | 2022-08-23 | Sungrow Power Supply Co., Ltd. | Method for controlling shutdown wave blocking of multilevel inverter circuit and application thereof |
| CN111049408A (en) * | 2020-01-06 | 2020-04-21 | 山东华天电气有限公司 | I-type three-level driving time sequence protection circuit |
| CN111276941A (en) * | 2020-02-23 | 2020-06-12 | 霍煜 | IGBT drive overcurrent protection and short-circuit protection system circuit |
| CN112290920A (en) * | 2020-09-23 | 2021-01-29 | 儒竞艾默生环境优化技术（上海）有限公司 | Driving system and method for dynamically adjusting gate voltage |
| CN112290920B (en) * | 2020-09-23 | 2021-12-28 | 上海儒竞智控技术有限公司 | Driving system and method for dynamically adjusting gate voltage |
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