CN203167267U - Thermoacoustic device - Google Patents

Thermoacoustic device Download PDF

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Publication number
CN203167267U
CN203167267U CN 201220615436 CN201220615436U CN203167267U CN 203167267 U CN203167267 U CN 203167267U CN 201220615436 CN201220615436 CN 201220615436 CN 201220615436 U CN201220615436 U CN 201220615436U CN 203167267 U CN203167267 U CN 203167267U
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China
Prior art keywords
carbon nano
substrate
electrode
tube
thermo
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CN 201220615436
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Chinese (zh)
Inventor
魏洋
林晓阳
姜开利
范守善
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Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
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Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
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Abstract

The utility model relates to a thermoacoustic device. The thermoacoustic device comprises a substrate which is provided with a first surface and a second surface opposite to the first surface, an insulating layer which is arranged on the first surface of the substrate, a thermoacoustic element which is arranged on the surface of the insulating layer of the first surface and is designed to be insulated from the substrate, a first electrode and a second electrode, wherein the first electrode and the second electrode are arranged at interval and are electrically connected with the thermoacoustic element. The substrate is a silicon substrate. A number of protrusion parts are formed on the first surface of the silicon substrate. A recessed part is formed between the adjacent protrusion parts. The thermoacoustic element corresponding to the position of a recessed part is suspended corresponding to the recessed part.

Description

Thermo-acoustic device
Technical field
The utility model relates to a kind of thermo-acoustic device, relates in particular to a kind of thermo-acoustic device based on carbon nano-tube.
Background technology
Sound-producing device generally is made up of signal input apparatus and sounding component, arrives this sounding component by the signal input apparatus input signal, and then sounds.Thermo-acoustic device is a kind of in the sound-producing device, and it is a kind of sound-producing device based on thermoacoustic effect, and this thermo-acoustic device is realized sounding by feed alternating current in a conductor.This conductor has less thermal capacitance (Heat capacity), thinner thickness, and its inner heat that produces can be conducted the characteristics of giving surrounding gas medium rapidly.When alternating current passes through conductor, with the variation of AC current intensity, the rapid heating and cooling of conductor, and heat exchange takes place rapidly with surrounding gas medium, and impel the surrounding gas medium molecular motion, gas medium density changes thereupon, and then sends sound wave.
On October 29th, 2008, people such as Fan Shoushan disclose a kind of thermo-acoustic device of using thermoacoustic effect, see also document " Flexible; Stretchable, Transparent Carbon Nanotube Thin Film Loudspeakers ", ShouShan Fan, et al., Nano Letters, Vol.8 (12), 4539-4545 (2008).This thermic sounding component adopts carbon nano-tube film as a thermic sounding component, because carbon nano-tube film has great specific area and minimum unit are thermal capacitance (less than 2 * 10 -4Joule every square centimeter of Kelvin), this thermic sounding component can send the sound that people's ear can be heard intensity, and has wideer audible frequency scope (100Hz～100kHz).
Yet, the thickness of described carbon nano-tube film as the thermic sounding component is nanoscale, easily damaged and be difficult for processing, be difficult to realize miniaturization, therefore, how to address the above problem is to make above-mentioned thermo-acoustic device can realize the key of industrialization and practical application.
Summary of the invention
In view of this, necessaryly provide a kind of easy processing, can realize miniaturization and can realize the thermo-acoustic device of industrialization.
A kind of thermo-acoustic device comprises: a substrate has a first surface and opposing second surface; One thermic sounding component is arranged at the first surface of described substrate and arranges with described substrate insulation; And one first electrode and one second electrode gap setting and be electrically connected with described thermic sounding component; Wherein, described substrate is a silicon base, the first surface of described silicon base is formed with a plurality of grooves that are parallel to each other and arrange at interval, the degree of depth of described groove is 100 microns to 200 microns, described thermic sounding component comprises a stratiform carbon nano tube structure, and this layered carbon nano tubular construction is in the unsettled setting of described groove.
A kind of thermo-acoustic device comprises: a substrate has a first surface and opposing second surface; One thermic sounding component is arranged at the first surface of described substrate and arranges with described substrate insulation; And one first electrode and one second electrode gap setting and be electrically connected with described thermic sounding component; Wherein, the recess that the first surface of described substrate is formed with a plurality of even distributions and arranges at interval, described concave depth is 100 microns to 200 microns, and described thermic sounding component comprises a stratiform carbon nano tube structure, and this layered carbon nano tubular construction is in the unsettled setting in described recess place.
A kind of thermo-acoustic device comprises: a substrate has a first surface and opposing second surface; One thermic sounding component is arranged at the first surface of described substrate and arranges with described substrate insulation; And one first electrode and one second electrode gap setting and be electrically connected with described thermic sounding component; Wherein, the first surface of described substrate is formed with a plurality of recesses, one first insulating barrier and one second insulating barrier are cascadingly set on the first surface of substrate between the described recess, and described a plurality of recess is exposed, one the 3rd insulating barrier arranges and covers side and the bottom surface of first insulating barrier and second insulating barrier and the described recess of described stacked setting continuously, described thermic sounding component is arranged on the surface of described the 3rd insulating barrier, and with respect to the unsettled setting of part at described recess location place.
Compared with prior art; described thermo-acoustic device adopts silicon base; on the one hand; the silicon base a plurality of recesses in surface and protuberance support carbon nano-tube film; cracky not when the protection carbon nano-tube film can be realized better sounding effect, on the other hand, based on the Si semiconductor manufacturing process of maturation; described thermo-acoustic device is easily processed, and can prepare undersized thermic loud speaker and be conducive to realize industrialization.
Description of drawings
Fig. 1 is the structural representation of the thermo-acoustic device that provides of the utility model first embodiment
Fig. 2 is that the described thermo-acoustic device of Fig. 1 is along the profile of II-II direction.
Preparation method's flow chart of the thermo-acoustic device that Fig. 3 provides for the utility model first embodiment.
The structural representation of the thermo-acoustic device that Fig. 4 provides for the utility model second embodiment.
Fig. 5 is the structural representation of the utility model the 3rd embodiment thermo-acoustic device.
Preparation method's flow chart of the thermo-acoustic device that Fig. 6 provides for the utility model the 3rd embodiment.
The structural representation of the thermo-acoustic device that Fig. 7 provides for the utility model the 4th embodiment.
Fig. 8 is that the described thermo-acoustic device of Fig. 7 is along the structural representation of VIII-VIII direction.
The structural representation of electrode in the thermo-acoustic device that Fig. 9 provides for the 4th embodiment.
The curve chart of sound pressure level-frequency in the thermo-acoustic device that Figure 10 provides for the utility model the 4th embodiment.
The sounding effect figure of the thermo-acoustic device that Figure 11 provides for the utility model the 4th embodiment.
The structural representation of the thermo-acoustic device array that provides among the preparation method of Figure 12 for the described thermo-acoustic device of Fig. 7.
The structural representation of the thermo-acoustic device that Figure 13 provides for the utility model the 5th embodiment.
The structural representation of the thermo-acoustic device that Figure 14 provides for the utility model the 6th embodiment.
The main element symbol description
Thermo- acoustic device 10,20,30,40,50,60
Substrate 100
First surface 101
Recess 102
Second surface 103
Protuberance 104
Groove 105
First electrode 106
Line of cut 107
Thermic sounding component 110
First area 112
Second area 114
Second electrode 116
Insulating barrier 120
First insulating barrier 122
Second insulating barrier 124
The 3rd insulating barrier 126
Integrated circuit (IC) chip 140
Third electrode 142
The 4th electrode 144
Thermo-acoustic device array 401
Substrate 1001
First connecting portion 1061
Second connecting portion 1161
Following specific embodiment will further specify the utility model in conjunction with above-mentioned accompanying drawing.
Embodiment
Describe the thermo-acoustic device of the utility model embodiment in detail below with reference to accompanying drawing.
See also Fig. 1 and Fig. 2, the utility model first embodiment provides a kind of thermo-acoustic device 10, and it comprises a substrate 100, a thermic sounding component 110, an insulating barrier 120, one first electrode 106 and one second electrode 116.This first electrode 106 and second electrode, 116 spaces arrange and are electrically connected with this thermic sounding component 110.This substrate 100 comprises a relative first surface 101 and a second surface 103.Described first surface 101 has a plurality of recesses 102, forms a protuberance 104 between the adjacent recess 102.Described insulating barrier 120 is arranged at the first surface 101 of described substrate 100, and is attached at the surface of described recess 102 and described protuberance 104 continuously.This thermic sounding component 110 is arranged at described first surface 101 and arranges by insulating barrier 120 and described substrate 100 insulation.Described thermic sounding component 110 has a first area 112 and a second area 114, the thermic sounding component 110 of described first area 112 is corresponding to described recess 102 positions, the thermic sounding component 110 unsettled settings of first area 112, and arrange at interval with the bottom surface of described recess 102.The thermic sounding component 110 of described second area 114 is arranged at the end face of described protuberance 104, and arranges by insulating barrier 120 and described protuberance 104 insulation.
This substrate 100 is a planar sheet structure, and shape is not limit, and can be circle, square or rectangle etc., also can be other shapes.The area of described substrate 100 is 25 square millimeters～100 square millimeters, specifically may be selected to be as 36 square millimeters, 64 square millimeters or 80 square millimeters etc.The thickness of described substrate 100 is 0.2 millimeter～0.8 millimeter.Be appreciated that described substrate 100 is not limited to above-mentioned planar sheet structure, have the described thermic sounding component 110 of a surface bears as long as guarantee described substrate 100, also may be selected to be block structure, globoidal structure, curved-surface structure etc.The material of described substrate 100 can be monocrystalline silicon or polysilicon.Described substrate 100 has good heat-conducting, thereby the heat that described thermic sounding component 110 produces at work can be transmitted to the external world timely, prolongs the useful life of thermic sounding component 110.In the present embodiment, this substrate 100 is that a length of side is 8 millimeters square-shaped planar laminated structure, and thickness is 0.6 millimeter, and material is monocrystalline silicon.
Described a plurality of recess 102 is arranged at the surface that described substrate 100 will be carried described thermic sounding component 110, and namely first surface 101.These a plurality of recesses 102 evenly distribute, with certain rule distribute, with array distribution or be randomly distributed in described first surface 101.Preferably, these a plurality of recesses 102 evenly distribute and the space setting.These a plurality of recesses 102 can be in through-hole structure, blind groove structure or the blind hole structure one or more.On the first surface 101 basad 100 inner directions of extending of substrate 100, described each recess 102 has a bottom surface and the side adjacent with this bottom surface at described recess 102.Be described protuberance 104 between the adjacent recess 102, the surface of the substrate 100 between the adjacent recesses 102 is the end face of described protuberance 104.The thermic sounding component 110 of described first area 112 is corresponding to described recess 102 positions, the thermic sounding component 110 unsettled settings of first area 112, that is and, the thermic sounding component 110 of described first area 112 does not contact with the bottom surface with the side of described recess 102.
The degree of depth of described recess 102 can reach the thickness of described substrate 100 according to actual needs and select; preferably; the degree of depth of described recess 102 is 100 microns～200 microns; make substrate 100 when playing protection thermic sounding component 110; can guarantee to form between described thermic sounding component 110 and the described substrate 100 enough spacings again; the heat that produces when preventing work is directly absorbed by substrate 100 and can't realize fully causing volume to reduce with the surrounding medium heat exchange, and guarantees that described thermic sounding component 110 all has good sounding effect at each audible frequency.When described recess 102 was groove, the length that described recess 102 extends at described first surface 101 can be less than the length of side of described substrate 100.The shape of the cross section of this recess 102 on its bearing of trend can be V-arrangement, rectangle, trapezoidal, polygon, circle or other are irregularly shaped.The width of described groove (being the maximum span of described recess 102 cross sections) is less than 1 millimeter more than or equal to 0.2 millimeter, can prevent that described thermic sounding component 110 from breaking in the course of the work on the one hand, can reduce the driving voltage of described thermic sounding component 110 on the other hand, make described driving voltage less than 12V, preferably smaller or equal to 5V.When being shaped as down of described groove cross section was trapezoidal, described groove was striden wide degree of depth increase with groove and is reduced.The angular dimension of described inverted trapezoidal groove base angle is relevant with the material of described substrate 100, and is concrete, and the angular dimension of described base angle equates with the interfacial angle of monocrystalline silicon in the described substrate 100.Preferably, described a plurality of recess 102 is parallel to each other and first surface 101 that evenly groove spaced apart is arranged at substrate 100 for a plurality of, separation d1 between every adjacent two grooves is 20 microns～200 microns, thereby guarantee that follow-up first electrode 106 and second electrode 116 are by the method preparation of silk screen printing, and can take full advantage of described substrate 100 surfaces, guarantee the accurate of etching simultaneously, thereby improve the quality of sounding.In the present embodiment, these substrate 100 first surfaces 101 have the inverted trapezoidal groove of a plurality of parallel equidistant distributions, described inverted trapezoidal groove is 0.6 millimeter at the width of first surface 101, and the degree of depth of described groove is 150 microns, and the spacing d1 between per two adjacent grooves is 100 microns.The size of described inverted trapezoidal groove base angle is 54.7 degree.
Described insulating barrier 120 can be a single layer structure or a sandwich construction.When described insulating barrier 120 was a single layer structure, described insulating barrier 120 can only be arranged at the end face of described protuberance 104, also can be attached at the whole first surface 101 of described substrate 100.Described " attaching " refers to because the first surface 101 of described substrate 100 has a plurality of recesses 102 and a plurality of protuberance 104, therefore described insulating barrier 120 directly covers described recess 102 and described protuberance 104, and the insulating barrier 120 of corresponding protuberance 104 positions is attached to the end face of described protuberance 104; The insulating barrier 120 of corresponding recess 102 positions is attached to bottom surface and the side of described recess 102, and namely the fluctuating trend of described insulating barrier 120 is identical with the fluctuating trend of described recess 102 and protuberance 104.Which kind of situation no matter, described insulating barrier 120 makes described thermic sounding component 110 and described substrate 100 insulation.In the present embodiment, described insulating barrier 120 is a continuous single layer structure, and described insulating barrier 120 covers described whole first surface 101.
The material of described insulating barrier 120 can be silicon dioxide, silicon nitride or its combination, also can be other insulating material, can make thermic sounding component 110 and described substrate 100 insulation as long as can guarantee described insulating barrier 120.The integral thickness of described insulating barrier 120 can be 10 nanometers～2 micron, specifically may be selected to be 50 nanometers, 90 nanometers or 1 micron etc., and in the present embodiment, the thickness of described insulating barrier is 1.2 microns.
Described thermic sounding component 110 is arranged at the first surface 101 of described substrate 100, and is concrete, and described thermic sounding component 110 is arranged at the surface of described insulating barrier 120.Be thermic sounding component 110 unsettled being arranged on the described recess 102 of first area 112, the second area 114 of described thermic sounding component 110 is arranged at insulating barrier 120 surfaces of described recess 102 end faces.Be appreciated that, for making this thermic sounding component 110 better be fixed in the first surface 101 of this substrate 100, one tack coat or bonding point can be set at the end face of described protuberance 104, thereby make thermic sounding component 110 be fixed in the first surface 101 of this substrate 100 by this tack coat or bonding point.
Described thermic sounding component 110 has less unit are thermal capacitance, its material is not limit, as pure nano-carbon tube structure, composite structure of carbon nano tube etc., also can be for thermic sounding material of other non-carbon nano-tube materials etc., as long as can realize the thermic sounding.Among the utility model embodiment, this thermic sounding component 110 is made up of carbon nano-tube, and the unit are thermal capacitance of described thermic sounding component 110 is less than 2 * 10 -4Every square centimeter of Kelvin of joule.Particularly, this thermic sounding component 110 is one to have the conductive structure than bigger serface and less thickness, thereby make this thermic sounding component 110 electric energy of input can be converted to heat energy, be that described thermic sounding component 110 can be according to the rapid heating and cooling of signal of input, and heat exchange takes place rapidly with surrounding gas medium, heating thermic sounding component 110 exterior circumferential gas mediums impel the surrounding gas medium molecular motion, gas medium density changes thereupon, and then sends sound wave.Preferably, this thermic sounding component 110 should be self supporting structure, and so-called " self supporting structure " i.e. this thermic sounding component 110 need not by a support body supports, also can keep self specific shape.Therefore, but the unsettled setting of thermic sounding component 110 parts of this self-supporting.The thermic sounding component 110 of this self supporting structure can contact and carry out heat exchange fully with surrounding medium.This thermic sounding component 110 can be layer structure that a membrane structure, a plurality of linear structure form side by side or the combination of membrane structure and linear structure.
Described thermic sounding component 110 can be a stratiform carbon nano tube structure, and described carbon nano tube structure is in the unsettled setting in described recess 102 positions.Described carbon nano tube structure is a stratiform structure on the whole, and thickness is preferably 0.5 nanometer～1 millimeter.When this carbon nano tube structure thickness was smaller, for example smaller or equal to 10 microns, this carbon nano tube structure had good transparency.Described carbon nano tube structure is self supporting structure.Attract each other by Van der Waals force between a plurality of carbon nano-tube in the carbon nano tube structure of this self-supporting, thereby make carbon nano tube structure have specific shape.So this carbon nano tube structure partly supports by substrate 100, and makes the unsettled setting of carbon nano tube structure other parts.Layered carbon nano tube structure comprises the carbon nano-tube that a plurality of preferred orientations are in the same direction extended, and the bearing of trend of described carbon nano-tube and the bearing of trend of described groove form an angle, and described angle is spent smaller or equal to 90 greater than zero degree.
Layered carbon nano tube structure comprises the combination of at least one carbon nano-tube film, a plurality of carbon nano tube line that is arranged side by side or at least one carbon nano-tube film and carbon nano tube line.Described carbon nano-tube film directly pulls acquisition from carbon nano pipe array.The thickness of this carbon nano-tube film is 0.5 nanometer～100 micron, and the unit are thermal capacitance is less than 1 * 10 -6Every square centimeter of Kelvin of joule.Described carbon nano-tube comprises one or more in Single Walled Carbon Nanotube, double-walled carbon nano-tube and the multi-walled carbon nano-tubes.The diameter of described Single Walled Carbon Nanotube is 0.5 nanometer～50 nanometers, and the diameter of double-walled carbon nano-tube is 1 nanometer～50 nanometers, and the diameter of multi-walled carbon nano-tubes is 1.5 nanometers～50 nanometers.The self supporting structure that each carbon nano-tube film is made up of some carbon nano-tube.Described some carbon nano-tube are for being arranged of preferred orient substantially in the same direction, and the bearing of trend of the bearing of trend of described carbon nano-tube and described groove forms an angle, described angle greater than zero degree smaller or equal to 90 degree.The whole bearing of trend that described preferred orientation refers to most of carbon nano-tube in carbon nano-tube film substantially in the same direction.And the whole bearing of trend of described most of carbon nano-tube is basically parallel to the surface of carbon nano-tube film.Further, most carbon nano-tube are to join end to end by Van der Waals force in the described carbon nano-tube film.Particularly, each carbon nano-tube joins end to end by Van der Waals force with carbon nano-tube adjacent on bearing of trend in most of carbon nano-tube of extending substantially in the same direction in the described carbon nano-tube film.Certainly, have the carbon nano-tube of minority random alignment in the described carbon nano-tube film, these carbon nano-tube can not arranged the overall orientation of most of carbon nano-tube in the carbon nano-tube film and be constituted obviously influence.Described self-supporting is that carbon nano-tube film does not need large-area carrier supported, and as long as the relative both sides power of providing support is can be on the whole unsettled and keep self membranaceous state, when being about to this carbon nano-tube film and placing (or being fixed in) to keep at a certain distance away on two supporters that arrange, the carbon nano-tube film between two supporters can the membranaceous state of unsettled maintenance self.Described self-supporting is mainly by existing the continuous Van der Waals force that passes through to join end to end and extend carbon nanotubes arranged and realize in the carbon nano-tube film.
Particularly, most carbon nano-tube of extending substantially in the same direction in the described carbon nano-tube film, and nisi linearity, bending that can be suitable; Perhaps be not fully according to arranging on the bearing of trend, can be suitable depart from bearing of trend.Therefore, can not get rid of between the carbon nano-tube arranged side by side in most carbon nano-tube of extending substantially in the same direction of carbon nano-tube film and may have the part contact.In the described carbon nano-tube film, these a plurality of carbon nano-tube are roughly parallel to the first surface 101 of described substrate 100.This carbon nano tube structure can comprise the first surface that is layed in substrate 100 101 that a plurality of carbon nano-tube films are coplanar.In addition, this carbon nano tube structure can comprise the carbon nano-tube film that multilayer is overlapped, has an intersecting angle α between the carbon nano-tube in the adjacent two layers carbon nano-tube film, and α is more than or equal to 0 degree and smaller or equal to 90 degree.
In the present embodiment, described thermic sounding component 110 is the carbon nano-tube film of individual layer, this carbon nano-tube film is arranged at the first surface 101 of this substrate 100, comprises the unsettled second area 114 that is arranged at the first area 112 of recess 102 and is arranged at protuberance 104 end faces.The thickness of described carbon nano-tube film is 50 nanometers.
Described carbon nano-tube film has stronger viscosity, so this carbon nano-tube film can directly adhere to the surface of described protuberance 104 position insulating barriers 120.A plurality of carbon nano-tube preferred orientation extension in the same direction in the described carbon nano-tube film, the bearing of trend of the bearing of trend of these a plurality of carbon nano-tube and described recess 102 forms certain angle, preferably, the bearing of trend of described carbon nano-tube is perpendicular to the bearing of trend of described recess 102.Further, after described carbon nano-tube film is adhered to the end face of protuberance 104, can with an organic solvent handle the carbon nano-tube film that sticks in the substrate 100.Particularly, can organic solvent be dropped in the whole carbon nano-tube film of carbon nano-tube film surface infiltration by test tube.This organic solvent is volatile organic solvent, as ethanol, methyl alcohol, acetone, dichloroethanes or chloroform, adopts ethanol in the present embodiment.Under the capillary effect that produces when volatile organic solvent volatilizees, on the microcosmic, the carbon nano-tube that the part in this carbon nano-tube film is adjacent can be shunk bunchy.The contact area of carbon nano-tube film and substrate 100 increases, thereby can be attached to the end face of protuberance 104 more closely.In addition, because the adjacent carbon nano-tube of part is shunk bunchy, mechanical strength and the toughness of carbon nano-tube film are enhanced, and the surface area of whole carbon nano-tube film reduces the viscosity reduction.On the macroscopic view, this carbon nano-tube film is a uniform membrane structure.
Described first electrode 106 and second electrode 116 are electrically connected with described thermic sounding component 110 respectively, so that this thermic sounding component 110 inserts an audio electrical signal.Particularly, described first electrode 106 and second electrode, 116 space sets also can be arranged at this thermic sounding component 110 away from the surface of substrate 100 in the surface of described insulating barrier 120 away from described substrate 100.This first electrode 106 and second electrode 116 are formed by electric conducting material, and its shape and structure are not limit.Particularly, this first electrode 106 and second electrode 116 may be selected to be elongated strip, bar-shaped or other shape.The material of this first electrode 106 and second electrode 116 may be selected to be metal, conducting polymer, conducting resinl, metallic carbon nanotubes or indium tin oxide (ITO) etc.
In the present embodiment, described first electrode 106 and second electrode 116 are arranged at respectively near insulating barrier 120 surfaces on the protuberance 104 of described thermic sounding component 110 relative two edges, and be arranged in parallel with the bearing of trend of described recess 102.The first area 112 of described thermic sounding component 110 and second area 114 are between described first electrode 106 and second electrode 116.This first electrode 106 and second electrode 116 are made of wire.In addition, be appreciated that described first electrode 106 and second electrode 116 also can be arranged at described thermic sounding component 110 away from the surface of substrate 100, and directly compress this thermic sounding component 110 and be fixed in substrate 100 surfaces.
Because carbon nano-tube has superior electrical conductivity vertically, when the carbon nano-tube in the carbon nano tube structure when being arranged of preferred orient in a certain direction, preferably, the setting of described first electrode 106 and second electrode 116 should guarantee that carbon nano-tube is extended along the direction of first electrode, 106 to second electrodes 116 in the described carbon nano tube structure.Preferably, should have a basic spacing that equates between described first electrode 106 and second electrode 116, thereby the carbon nano tube structure that makes zone between first electrode 106 and second electrode 116 can have a basic resistance value that equates, preferably, the length of described first electrode 106 and second electrode 116 is more than or equal to the width of carbon nano tube structure, thereby can make whole carbon nano tube structure all obtain utilizing.In the present embodiment, carbon nano-tube is arranged along basic vertical this first electrode 106 and second electrode, 116 length directions in the described thermic sounding component 110, and described first electrode 106 and second electrode 116 are arranged in parallel.Described audio electrical signal is by this first electrode 106 and second electrode, 116 these carbon nano tube structures of input.
Be appreciated that because the sounding principle of this thermic sounding component 110 is the conversion of " electricity-Re-sound ", so this thermic sounding component 110 can send certain heat in sounding.Above-mentioned thermo-acoustic device 10 can insert an audio electrical signal source by this first electrode 106 and second electrode 116 in use.This carbon nano tube structure has less unit are thermal capacitance and bigger heat-delivery surface, behind input signal, carbon nano tube structure heating and cooling rapidly, produce periodic variations in temperature, and and surrounding medium carry out heat exchange fast, make surrounding medium property density cycle change, and then sound.Further, described thermo-acoustic device 10 can comprise that a heat abstractor (not shown) is arranged at this substrate 100 away from the surface of this thermic sounding component 110.
Described thermo-acoustic device 10 has following beneficial effect: at first, the recess width of described silicon base be more than or equal to 0.2 millimeter less than 1 millimeter, thereby can effectively protect the stratiform carbon nano tube structure, and do not influence sounding effect; Secondly, described thermo-acoustic device 10 adopts silicon materials as substrate 100, therefore described thermo-acoustic device 10 is easily processed, can adopt ripe processing technology, be conducive to prepare micro-structural, microdevice, and be conducive to industrialized development, therefore can prepare the small size thermic loud speaker of (as less than 1 centimetre); Again, described substrate 100 has good thermal conductivity, and therefore described thermo-acoustic device 10 has good thermal diffusivity, and need not to arrange separately heat dissipation element; At last, the thermo-acoustic device 10 of described substrate 100 can compatible present manufacture of semiconductor, easily and other components and parts such as IC chip etc. integrated, be convenient to other components and parts integratedly, reduce to take up room, be very suitable for undersized electronic device.
See also Fig. 3, the utility model further provides a kind of preparation method of thermo-acoustic device 10, and described preparation method mainly may further comprise the steps:
Step S11 provides a substrate 100, and described substrate 100 has the recess 102 that a plurality of intervals arrange, and forms the surface of a patterning;
Step S12 forms an insulating barrier 120 on the surface of described substrate 100 patternings;
Step S13 forms one first electrode 106 and second electrode 116 at described insulating barrier 120 spaced surfaces; And
Step S14 arranges a thermic sounding component 110 and is electrically connected with described first electrode 106 and second electrode 116.
In step S11, described substrate 100 has a first surface 101 and opposing second surface 103, and described a plurality of recesses 102 are formed at the first surface 101 of described substrate 100, is a protuberance 104 between the adjacent recess 102.More than 100 recess 102 of described substrate can form by the method for dry etching or wet etching.In the present embodiment, described substrate 100 forms described recess 102 by the method for wet etching.Concrete, the lithographic method of described substrate 100 may further comprise the steps:
Step S111 is arranged at a mask (not shown) first surface 101 of described substrate 100;
Step S112, the described substrate 100 of etching forms described a plurality of recess 102; And
Step S113 removes described mask.
In step S111, described mask has the structure that a plurality of through holes form a patterning, and the substrate 100 at corresponding lead to the hole site place comes out.The shape of described through hole can be selected according to the needs of described recess 102, as circular, square, rectangle etc.The material of described mask can be selected according to the material of substrate 100, in the present embodiment, the material of described mask can be silicon dioxide, described through hole be shaped as rectangle, the width of described rectangle is less than 1 millimeter more than or equal to 0.2 millimeter, spacing between the adjacent through-holes is 20 microns to 200 microns, thereby guarantees the follow-up accuracy that forms by silk screen printing on substrate 100 surfaces in the process of electrode, and the length of described rectangle can equate with the length of side of described substrate 100.
In step S112, described etching solution can be an alkaline solution, and etching solution described in the present embodiment is that concentration is 30% potassium hydroxide solution, and temperature is 80 ° of C.Because through hole is that cross section is the through hole of rectangle described in the described mask, a plurality of through holes extend in the same direction in the described mask, therefore, described recess 102 also is the groove structure that extends in the same direction, and the Breadth Maximum of described groove more than or equal to 0.2 millimeter less than 1 millimeter, distance between the adjacent notches is 20 microns to 200 microns, and then is conducive to the follow-up electrode for preparing between adjacent notches.And because the material of described substrate 100 is monocrystalline silicon, therefore in the process that adopts wet etching, the shape of the recess 102 of described formation is relevant with crystal face and the crystal orientation of described monocrystalline silicon.Concrete, described etching solution carries out etching along the direction in the crystal orientation that is parallel to described monocrystalline silicon to described substrate 100, thereby the cross section of the recess 102 that forms is an inverted trapezoidal structure, be the sidewall of described recess 102 and non-perpendicular to the surface of described substrate 100, but form certain included angle α.The size of described angle α equals the interfacial angle of described monocrystalline silicon.In the present embodiment, described angle α is 54.7 degree.
In step S113, described mask can be removed by the mode of solution corrosion, and described solution is the described mask of solubilized only, and described substrate 100 is not influenced substantially, thereby guarantees the integrality of the shape of described recess 102.In the present embodiment, described mask is silicon dioxide, can be by adopting hydrofluoric acid (HF 4) the corroding method removal.
In step S12, described insulating barrier 120 is the single layer structure that same insulating material deposition forms.Described insulating barrier 120 can be by the method preparation of physical vaporous deposition or chemical vapour deposition technique.The thickness of described insulating barrier 120 can be selected according to actual needs, does not influence shape and the distribution of described recess 102 as long as guarantee the thickness of described insulating barrier 120.Described insulating barrier 120 can only be deposited on the end face of described protuberance 104, and namely described insulating barrier 120 is a discrete layer structure; Also can cover described whole surface, it is the end face that the insulating barrier 120 at corresponding protuberance 104 top side location places is deposited on described protuberance 104, the insulating barrier 120 of corresponding described recess 102 positions is deposited on bottom surface and the side of described recess 102, and namely described insulating barrier 120 is a continuous layer structure.In the present embodiment, described insulating barrier 120 is a continuous single layer structure, and covers the described surface that is provided with the whole substrate 100 of protuberance 104.In the process of depositing insulating layer 120, it is identical with the described fluctuating trend that is formed with protuberance 104 and recess 102 that the fluctuating trend of described insulating barrier 120 keeps.
In step S13, described first electrode 106 and second electrode 116 are arranged at the end face of the protuberance 104 on described substrate 100 relative both sides respectively.Concrete, described first electrode 106 and second electrode 116 are attached at the end face of described protuberance 104 respectively, and its bearing of trend all is parallel to the bearing of trend of described protuberance 104.The material of described first electrode 106 and second electrode 116 may be selected to be metal, conducting polymer, conducting resinl, metallic carbon nanotubes or indium tin oxide (ITO) etc., can form by modes such as silk screen printings.In the present embodiment, described first electrode 106 and second electrode 116 are formed on the end face of described protuberance 104 by the mode of silk screen printing.
In step S14, described thermic sounding component 110 is arranged at the surface that described substrate 100 is etched with recess 102, and is electrically connected with described first electrode 106 and second electrode 116.Concrete, described thermic sounding component 110 comprises a first area 112 and a second area 114, thermic sounding component 110 unsettled being arranged on the described recess 102 of corresponding first area 112, the thermic sounding component 110 of corresponding second area 114 is arranged at the end face of described protuberance 104.In described first electrode 106 and second electrode, 116 positions, described thermic sounding component 110 is attached at the surface of described first electrode 106 and second electrode 116, and is electrically connected with it.Described thermic sounding component 110 comprises a carbon nano tube structure, and described carbon nano tube structure comprises at least one carbon nano-tube film or carbon nano tube line or its combination.In the present embodiment, described thermic sounding component 110 is arranged on the surface of described substrate 100 by the following method:
Step S141 provides a carbon nano-tube film;
Step S142 is arranged at the surface that described substrate 100 is provided with insulating barrier 120 with described carbon nano-tube film, the unsettled setting of carbon nano-tube film of corresponding recess 102 positions, and the carbon nano-tube film of corresponding protuberance 104 positions is attached at the surface of described insulating barrier 120.
In step S141, described carbon nano-tube film is for pulling the carbon nano-tube membrane of acquisition from a carbon nano pipe array.Described carbon nano-tube membrane has great specific area, therefore has very strong absorption affinity, is attached at the surface of described substrate 100 after therefore described carbon nano-tube film can directly be pulled out.
In step S142, the unsettled setting of carbon nano-tube film of corresponding recess 102 positions, and the carbon nano-tube film of corresponding protuberance 104 positions directly is attached at the surface of protuberance 104 insulating barriers of described interval setting, and the carbon nano-tube film of corresponding first electrode 106 and second electrode, 116 positions directly is attached at the surface of described first electrode 106 and second electrode 116.When described carbon nano-tube film arranges, make the bearing of trend of carbon nano-tube in the described carbon nano-tube film and the bearing of trend of described recess 102 form certain angle.In the present embodiment, this angle is 90 degree.Make the bearing of trend of carbon nano-tube in the described carbon nano-tube film for extending to second electrode 116 from first electrode 106.
Further, after described thermic sounding component 110 is set, can comprise further that one arranges the step of a retaining element (not shown) on described thermic sounding component 110 surfaces that are positioned at protuberance 104 end faces.Described retaining element can form by the form of silk screen printing or coating, and described retaining element can further be fixed described thermic sounding component 110.In the present embodiment, described retaining element is made of wire, and this wire can directly compress this thermic sounding component 110 and be fixed in the substrate 100.
Further, described first electrode 106 and second electrode 116 also can form the surface with described thermic sounding component 110.Secondly namely at first described thermic sounding component 110 is arranged at the first surface 101 of described substrate 100,, at the location interval of the second area 114 of described thermic sounding component 110 one first electrode 106 and second electrode 116 is set.The preparation method of described first electrode 106 and second electrode 116 does not limit, as long as guarantee the integrality of described thermic sounding component 110.Described first electrode 106 and second electrode 116 can be formed on the surface of described thermic sounding component 110 by the method for silk screen printing.Described first electrode 106 and second electrode 116 are separately positioned on second area 114 surfaces of described thermic sounding component 110, the bearing of trend of described first electrode 106 and second electrode 116 is parallel to the bearing of trend of described recess 102, and the carbon nano-tube in the described carbon nano-tube film is extended along the direction from first electrode, 106 to second electrodes 116.Described first electrode 106 and second electrode 116 play the effect of fixing described thermic sounding component 110 simultaneously, make described thermic sounding component 110 be fixed in substrate 100 closely.
See also Fig. 4, the utility model second embodiment provides a kind of thermo-acoustic device 20, comprises a substrate 100, a thermic sounding component 110, an insulating barrier 120, one first electrode 106 and one second electrode 116.This first electrode 106 and second electrode, 116 spaces arrange and are electrically connected with this thermic sounding component 110.The structure of thermo-acoustic device 10 is basic identical described in the thermo-acoustic device 20 that the utility model second embodiment provides and first embodiment, and its difference is that described thermic sounding component 110 comprises a plurality of carbon nano tube lines parallel and that arrange at interval.
Described a plurality of carbon nano tube line is parallel to each other and a stratiform carbon nano tube structure of formation is set at interval, the bearing of trend of the bearing of trend of described carbon nano tube line and described recess 102 intersects to form certain angle, and the bearing of trend of carbon nano-tube is parallel to the bearing of trend of described carbon nano tube line in the carbon nano tube line, layered carbon nano tube structure comprises a plurality of carbon nano tube lines that are parallel to each other and arrange at interval in described groove location, and the unsettled setting of described carbon nano tube line corresponding recess 102 position parts.Preferably, the bearing of trend of described carbon nano tube line is vertical with the bearing of trend of described recess 102.Distance between adjacent two carbon nano tube lines is 1 micron～200 microns, preferably, is 50 microns～150 microns.In the present embodiment, the distance between the described carbon nano tube line is 120 microns, and the diameter of described carbon nano tube line is 1 micron.Described carbon nano tube line can be the non-carbon nano tube line that reverses or the carbon nano tube line that reverses.The described non-carbon nano tube line that reverses is self supporting structure with the carbon nano tube line that reverses.Particularly, this non-carbon nano tube line that reverses comprises that a plurality of edges are parallel to the carbon nano-tube that this non-carbon nano tube line length direction that reverses extends.Particularly, this non-carbon nano tube line that reverses comprises a plurality of carbon nano-tube fragments, and these a plurality of carbon nano-tube fragments join end to end by Van der Waals force, and each carbon nano-tube fragment comprises a plurality of carbon nano-tube that are parallel to each other and combine closely by Van der Waals force.This carbon nano-tube fragment has length, thickness, uniformity and shape arbitrarily.This non-carbon nano-tube line length of reversing is not limit, and diameter is 0.5 nanometer～100 micron.The non-carbon nano tube line that reverses obtains for above-mentioned carbon nano-tube film is handled by organic solvent.Particularly, organic solvent is soaked into the whole surface of described carbon nano-tube film, under the capillary effect that when volatile organic solvent volatilizees, produces, the a plurality of carbon nano-tube that are parallel to each other in the carbon nano-tube film are combined closely by Van der Waals force, thereby make carbon nano-tube film be punctured into a non-carbon nano tube line that reverses.This organic solvent is volatile organic solvent, as ethanol, methyl alcohol, acetone, dichloroethanes or chloroform.Compare with the carbon nano-tube film of handling without organic solvent by the non-carbon nano tube line that reverses that organic solvent is handled, specific area reduces, and viscosity reduces.And after shrinking, at first, described carbon nano tube line has higher mechanical strength, and reduction causes the impaired probability of carbon nano tube line because of the external force effect; Secondly, described carbon nano tube line is firm is attached to described substrate 100 surfaces, and overhanging portion remains the state of tightening, thereby can guarantee in the course of the work, carbon nano tube line does not deform, and prevents because distortion and problems such as the sounding distortion that causes, component failure.
The described carbon nano tube line that reverses reverses acquisition along the two ends of carbon nano-tube bearing of trend according to rightabout with above-mentioned carbon nano-tube film for adopting a mechanical force.This carbon nano tube line that reverses comprises a plurality of carbon nano-tube of extending around this carbon nano tube line axial screw of reversing.Particularly, this carbon nano tube line that reverses comprises a plurality of carbon nano-tube fragments, and these a plurality of carbon nano-tube fragments join end to end by Van der Waals force, and each carbon nano-tube fragment comprises a plurality of carbon nano-tube that are parallel to each other and combine closely by Van der Waals force.This carbon nano-tube fragment has length, thickness, uniformity and shape arbitrarily.The carbon nano-tube line length that this reverses is not limit, and diameter is 0.5 nanometer～100 micron.Further, can adopt a volatile organic solvent to handle the carbon nano tube line that this reverses.Under the capillary effect that produces when volatile organic solvent volatilizees, adjacent carbon nano-tube is combined closely by Van der Waals force in the carbon nano tube line that reverses after the processing, and the specific area of the carbon nano tube line that reverses is reduced, and density and intensity increase.
Described carbon nano tube line and preparation method thereof sees also the applicant on September 16th, 2002 application, CN100411979C number China's bulletin patent " a kind of carbon nano-tube rope and manufacture method thereof " in bulletin on August 20th, 2008, applicant: Tsing-Hua University, Hongfujin Precise Industry (Shenzhen) Co., Ltd., and on December 16th, 2005 application, CN100500556C number China's bulletin patent " carbon nano-tube filament and preparation method thereof " in bulletin on June 17th, 2009, applicant: Tsing-Hua University, Hongfujin Precise Industry (Shenzhen) Co., Ltd..
The utility model second embodiment further provides a kind of preparation method of described thermo-acoustic device 20, mainly may further comprise the steps:
Step S21 provides a substrate 100, and described substrate 100 has the recess 102 that a plurality of intervals arrange, and forms the surface of a patterning;
Step S22 forms an insulating barrier 120 on the surface of described substrate 100 patternings;
Step S23 forms one first electrode 106 and second electrode 116 at described insulating barrier 120 spaced surfaces; And
Step S24 arranges a carbon nano-tube film and is electrically connected with described first electrode 106 and second electrode 116.
Step S25 handles described carbon nano-tube film, forms a plurality of carbon nano tube lines parallel and that arrange at interval.
The preparation method of the preparation method of described thermo-acoustic device 20 and described thermo-acoustic device 10 is basic identical, and its difference is, comprises that further one handles described carbon nano-tube film, forms the step of a plurality of carbon nano tube lines parallel and that arrange at interval.
Concrete, in step S25, after carbon nano-tube film was arranged at described substrate 100 surfaces, described carbon nano-tube film was handled mainly and be may further comprise the steps:
At first, utilize the described carbon nano-tube film of laser cutting, form the carbon nano-tube band at a plurality of intervals;
Described laser cutting can utilize a laser aid (not shown) to launch a pulse laser, and the power of this laser is not limit, and can be 1 watt to 100 watts.This laser has directionality preferably, therefore can form a hot spot on the carbon nano-tube film surface.The power density that this laser has on the carbon nano-tube film surface can be greater than 0.053 * 10 12Watt/square metre.In the present embodiment, this laser aid is a carbon dioxide laser, and the rated power of this laser is 12 watts.Be appreciated that this laser aid also can be chosen as the laser that can launch continuous laser.The hot spot that described laser forms is circular substantially, and diameter is 1 micron～5 millimeters.Being appreciated that this hot spot can be focuses on laser that the back forms or is formed on the carbon nano-tube film surface by the laser direct irradiation.Preferably, focus on the hot spot that forms and have less diameter, as 5 microns.Described hot spot than minor diameter can form thinner cut channel on the carbon nano-tube film surface, thereby reduces the ablated carbon nano-tube of falling.
Described laser cuts described carbon nano-tube film along the scanning direction that is basically perpendicular to described substrate 100, and the cut direction of described laser is parallel to the direction of the preferred orientation extension of carbon nano-tube described in the carbon nano-tube film.Define that the whole bearing of trend of most of carbon nano-tube is x in the described carbon nano-tube film, then described laser is with respect to the described carbon nano-tube film of the parallel mobile irradiation of described x direction.In the process of described laser cutting, continuous carbon nano tube film is cut into the identical carbon nano-tube band of a plurality of width, described width can be selected according to actual sounding needs such as high frequency, low frequency, intermediate frequency etc.Comprise the arrangement that is substantially parallel to each other of a plurality of carbon nano-tube in described each carbon nano-tube band.
Secondly, handle described carbon nano-tube band with organic solvent, described carbon nano-tube band is shunk form carbon nano tube line.
Thereby the processing of described carbon nano-tube band can be dropped in the carbon nano-tube belt surface with organic solvent by test tube soaks into whole carbon nano-tube band.Also above-mentioned carbon nano-tube band can be immersed in the container that fills organic solvent together with substrate 100 grades and soak into.This organic solvent is volatile organic solvent, as ethanol, methyl alcohol, acetone, dichloroethanes or chloroform, and the preferred ethanol that adopts in the present embodiment.After this organic solvent volatilization, under the capillary effect of volatile organic solvent, the carbon nano-tube band shrinks and forms described a plurality of carbon nano tube lines.Described carbon nano tube line comprises and a plurality ofly extending axially and end to end carbon nano-tube along carbon nano tube line that the two ends of carbon nano tube line are electrically connected with first electrode 106 and second electrode 116 respectively.In the present embodiment, the diameter of the carbon nano tube line that described contraction forms is 0.5 micron-3 microns.
After described carbon nano-tube band is handled through organic solvent, described carbon nano-tube band shrinks and forms the carbon nano tube line that a plurality of intervals arrange, the two ends of each carbon nano tube line connect first electrode 106 and second electrode 116 respectively, thereby can reduce the driving voltage of described thermic sounding component 110, strengthen the stability (dark part is substrate among the figure, and white portion is electrode) of thermic sounding component 110.The processing that is appreciated that described carbon nano-tube band only is an optional step.Handle in the process of described carbon nano-tube band at organic solvent, be positioned at the carbon nano-tube of protuberance 104 positions because firm described insulating barrier 120 surfaces of being fixed in, therefore do not shrink substantially, thereby guarantee that described carbon nano tube line can keep good being electrically connected and firm fixing with described first electrode 106 and second electrode 116.The width of described carbon nano-tube band can be 10 microns to 50 microns, thereby guarantee that the contraction that described carbon nano-tube band can be complete forms carbon nano tube line, prevent from the process of follow-up contraction, occurring the crack in the carbon nano-tube band again when the carbon nano-tube band is wide on the one hand, influence follow-up thermic sounding effect; Prevent from occurring in the contraction process when carbon nano-tube band is narrow the meticulous useful life that influences the thermic sounding component of carbon nano tube line of fracture or formation on the other hand, and narrow carbon nano-tube band has also increased technology difficulty.The diameter that shrinks the carbon nano tube line of back formation is 0.5 micron to 3 microns.In the present embodiment, the width of described carbon nano-tube band is 30 microns, and the diameter that shrinks the carbon nano tube line of back formation is 1 micron, and the distance between the adjacent carbon nano tube line is 120 microns.The width that is appreciated that described carbon nano-tube band is not limited to above the act,, can select according to actual needs normally under the situation of thermic sounding at the carbon nano tube line that guarantee to form.
See also Fig. 5, the utility model the 3rd embodiment provides a kind of thermo-acoustic device 30, and it comprises a substrate 100, a thermic sounding component 110, an insulating barrier 120, one first electrode 106 and one second electrode 116.This first electrode 106 and second electrode 116 arrange at interval and are electrically connected with this thermic sounding component 110.This substrate 100 comprise a first surface 101 and with these first surface 101 opposing second surface 103.Described first surface 101 has a plurality of protuberances 104, form a recess 102 between the adjacent protuberance 104, described insulating barrier 120 is arranged at the first surface 101 of described substrate 100, and this thermic sounding component 110 is arranged at described first surface 101 and arranges by insulating barrier 120 and described substrate 100 insulation.Described thermic sounding component 110 has a first area 112 and a second area 114, and the thermic sounding component of described first area 112 110 is unsettled to be arranged at described recess 102, and arranges at interval with the bottom surface of described recess 102.The thermic sounding component 110 of described second area 114 is arranged at the end face of described protuberance 104, and arranges by insulating barrier 120 and described protuberance 104 insulation.
The structure of thermo-acoustic device 20 is basic identical described in the thermo-acoustic device 30 that the utility model second embodiment provides and first embodiment, and its difference is that in the described thermo-acoustic device 30, described insulating barrier 120 comprises sandwich construction.In the insulating barrier 120 of described sandwich construction, described insulating barrier 120 can only be arranged at the surface of described protuberance 104; Also can be attached at the first surface 101 of described substrate 100; Also can a certain individual layer only be attached at the surface of protuberance 104, other layers then are attached at the whole first surface 101 of described substrate 100.In the present embodiment, described insulating barrier 120 comprises one first insulating barrier, 122, the second insulating barriers 124 and the 3rd insulating barrier 126.Described first insulating barrier 122 and second insulating barrier 124 are a discontinuous structure, and stack gradually the end face that is attached at described protuberance 104; Described the 3rd insulating barrier 126 is a continuous layer structure, is attached at the surface of described second insulating barrier 124 and bottom surface and the side of described recess 102.The material of described first insulating barrier 122 is silicon dioxide, and the material of described second insulating barrier 124 is silicon nitride, and the material of described the 3rd insulating barrier 126 is silicon dioxide.
During sandwich construction that described insulating barrier 120 is made up of multi-layer insulation, the insulating material of each layer can be identical or different.The thickness of the insulating material of described each layer can be 10 nanometers～1 micron, can select according to the needs of concrete element.In the present embodiment, described insulating barrier 120 is made up of trilaminate material, and the material of described first insulating barrier 122 is silicon dioxide, and thickness is 100 nanometers; The material of described second insulating barrier 124 is silicon nitride, and thickness is 90 nanometers; The material of described the 3rd insulating barrier 126 is silicon dioxide, and thickness is 1 micron.The insulating barrier 120 of described multilayer setting can guarantee the electric insulation of described thermic sounding component 110 and described substrate 100 fully, and can reduce or avoid described silicon base 100 oxidized phenomenon in preparation process.
See also Fig. 6, the utility model further provides a kind of preparation method of described thermo-acoustic device 30, mainly may further comprise the steps:
Step S31 provides a substrate 100, and a surface of described substrate 100 is formed with one first insulating barrier 122 and one second insulating barrier 124 successively;
Step S32, described first insulating barrier 122 of etching and second insulating barrier 124 expose the part surface of described substrate 100;
Step S33, the surface that the described substrate 100 of etching exposes forms a plurality of recesses 102 and a plurality of protuberance 104, forms the surface of a patterning;
Step S34 forms one the 3rd insulating barrier 126 and covers the described surface that is formed with a plurality of recesses 102 and protuberance 104;
Step S35 arranges one first electrode 106 and second electrode 116 respectively at the end face of the protuberance 104 of described substrate 100 relative positions, both sides; And
Step S36 arranges a thermic sounding component 110 and is electrically connected with described first electrode 106 and second electrode 116.
The preparation method of the described thermo-acoustic device 30 that the utility model provides and the preparation method of described thermo-acoustic device 20 are basic identical, and its difference is, forms the insulating barrier 120 of a sandwich construction on the surface of described substrate 100.
In step S31, described first insulating barrier 122 and second insulating barrier can be formed at the surface of described substrate 100 successively by the chemical vapour deposition technique preparation, and described first insulating barrier 122 is used as the resilient coating of deposition second insulating barrier 124, thereby can improve the quality of described second insulating barrier 124, reduce generation of defects, improve the voice quality of described thermo-acoustic device 30.
In step S32, described first insulating barrier 122 and second insulating barrier 124 can be by the method etchings of mask etching.Described mask has a plurality of through holes, in the present embodiment, described through hole be shaped as rectangle.Therefore in the process of described first insulating barrier 122 of etching and second insulating barrier 124, form a plurality of rectangular recess that extend in the same direction, the cross section of described groove is rectangle, exposes the part surface of described substrate 100.
In step S33, in the process of the described substrate 100 of etching, because the material of described substrate 100 is monocrystalline silicon, the cross section that therefore forms described recess 102 is inverted trapezoidal structure.In the process of the described substrate 100 of etching, described first insulating barrier 122 and second insulating barrier 124 are unaffected substantially.Described first insulating barrier 122 and described second insulating barrier, the 124 stacked end faces that are arranged at described protuberance 104.
In step S34, described the 3rd insulating barrier 126 is a continuous single layer structure, cover described a plurality of recesses 102 and a plurality of protuberance 104 continuously, described the 3rd insulating barrier 126 is attached at the surface of described patterning, and its fluctuating trend is identical with the fluctuating trend of described a plurality of recesses 102 and a plurality of protuberance 104.Be second insulating barrier, 124 surfaces that described the 3rd insulating barrier 126 of corresponding protuberance 104 positions is attached at described protuberance 104 end faces, the 3rd insulating barrier 126 of corresponding recess 102 positions directly is attached at bottom surface and the side of described recess 102.By multilayer dielectric layer is set, can guarantee the electric insulation of described thermic sounding component and described substrate fully, reduce the generation of short circuit phenomenon, it is oxidized and influence sounding effect to reduce described silicon chip, and is adapted to the demand of industrialization and industrialization more.
See also Fig. 7, Fig. 8 and Fig. 9, the utility model the 4th embodiment provides a kind of thermo-acoustic device 40, and it comprises a substrate 100, a thermic sounding component 110, an insulating barrier 120 and a plurality of first electrode 106 and a plurality of second electrode 116.This substrate 100 has opposite first 101 and second surface 103, and described first surface 101 has a plurality of recesses 102 and arranges at interval, forms a protuberance 104 between the adjacent recesses 102, and described insulating barrier 120 is arranged at the end face of described protuberance 104 at least.Described this thermic sounding component 110 is arranged at the first surface 101 that this substrate 100 has recess 102, described thermic sounding component 110 comprises a first area 112 and a second area 114, the thermic sounding component 110 of described first area 112 is unsettled to be arranged at described recess 102, and the thermic sounding component 110 of described second area 114 is attached at the end face of described recess 102.These a plurality of first electrodes 106 and a plurality of second electrode 116 are interval between the insulating barrier 120 of this thermic sounding component 110 and protuberance 104 end faces.
Thermo-acoustic device 20 structures of the thermo-acoustic device 40 of the 4th embodiment and second embodiment are basic identical, its difference is, this thermo-acoustic device 40 comprises a plurality of first electrodes 106 and a plurality of second electrode 116, these a plurality of first electrodes 106 and the 116 alternate intervals settings of a plurality of second electrode and be arranged at insulating barrier 120 surfaces of a plurality of described protuberance 104 end faces respectively.The height of these a plurality of first electrodes 106 and a plurality of second electrodes 116 is not limit, and preferably, the height of these a plurality of first electrodes 106 and a plurality of second electrodes 116 is 1 micron-200 microns.
Further, these a plurality of first electrodes 106 are arranged alternately with these a plurality of second electrodes 116, and arrange at interval between the first adjacent electrode 106 and second electrode 116.Particularly, described a plurality of first electrodes 106 are electrically connected by one first connecting portion 1061, constitute one first comb electrode; Described a plurality of second electrode 116 is electrically connected by one second connecting portion 1161, constitutes one second comb electrode.Described first comb electrode and described second comb electrode are interlaced and be oppositely arranged, and a plurality of first electrodes 106 are parallel to each other and the alternate intervals setting with a plurality of second electrodes 116.Described first connecting portion 1061 and second connecting portion 1161 can be arranged at the relative two edges of described substrate 100 first surfaces 101 respectively, described first connecting portion 1061 and second connecting portion 1161 only play the effect of electrical connection, and it arranges the thermic sounding that the position does not influence described thermic sounding component 110.
As Figure 10 and shown in Figure 11, the sounding effect figure of described thermo-acoustic device 20 when recess 102 is selected different depth.The degree of depth of described recess 102 is preferably 100 microns～200 microns, thereby make described thermo-acoustic device 20 in the occurrence frequency frequency range that people's ear can be heard, make described thermo-acoustic device 20 have good heat wave wavelength, under undersized situation, still have good sounding effect.Further; substrate 100 is when playing protection thermic sounding component 110; can guarantee to form between described thermic sounding component 110 and the described substrate 100 enough spacings again; the heat that produces when preventing work is directly absorbed by substrate 100 and can't realize fully causing volume to reduce with the surrounding medium heat exchange, and guarantees that described thermic sounding component 110 all has good response in the sounding frequency range.Simultaneously, the described degree of depth can guarantee that also described thermic sounding component 110 has better sounding effect, avoids producing the interference of sound phenomenon when dark because recess depths is crossed, and guarantees sounding tonequality.
This kind connected mode is organized adjacent each and is formed a thermic phonation unit between first electrode 106 and second electrode 116, described thermic sounding component 110 forms a plurality of thermic phonation units parallel with one another, drives the required voltage reduction of these thermic sounding component 110 sounding thereby make.
See also Figure 12, the utility model further provides a kind of preparation method of described thermo-acoustic device 40, mainly comprises:
Step S41 provides a substrate 1001, and described substrate 1001 comprises first surface 101, at a plurality of unit cells of first surface 101 definition of described substrate;
Step S42 forms a plurality of recesses 102 parallel and that arrange at interval in first surface 101 each unit cell of described substrate 1001;
Step S43, at least one first electrode 106 and at least one second electrode 116 of formation space have at least one groove between described first electrode 106 and second electrode 116 in each unit cell of first surface of described substrate 1001;
Step S44, first surface 101 in described substrate attaches a thermic sounding component 110, and make described thermic sounding component 110 cover each unit cell, and be electrically connected with described first electrode 106 and second electrode 116, described thermic sounding component 110 is unsettled in described a plurality of recesses 102 positions;
Step S45 is cut apart described thermic sounding component 110 according to described a plurality of unit cells, makes electric insulation between the thermic sounding component 110 of adjacent cells grid, forms a thermo-acoustic device array 401; And
Step S46 is cut apart described substrate 1001, forms a plurality of thermo-acoustic devices 40.
The preparation method of the preparation method of described thermo-acoustic device 40 and thermo-acoustic device 20 is basic identical, and its difference is, at first forms a plurality of unit cells at substrate 1001, and then cuts described substrate 1001, thereby form a plurality of thermo-acoustic devices 40.
In step S41, more than 101 unit cell of the first surface of described substrate 1001 is separate.The described method that the first surface 101 of substrate 1001 is defined a plurality of unit cells is not limit.In the present embodiment, form a plurality of lines of cut 107 and described first surface 101 pre-segmentations are formed a plurality of unit cells by the first surface 101 at substrate 1001.The method of described formation line of cut 107 is not limit, and can pass through Mechanical Method or chemical method, as methods such as cutting, polishing, chemical etching, corrosion as described in the first surface 101 of substrate 1001 form a plurality of lines of cut 107.In the present embodiment, described substrate 1001 forms described line of cut 107 by the method for wet etching.The position is set can selects according to actual needs of described line of cut 107, the shape of the thermo-acoustic device 40 that forms as needs etc.In the present embodiment, adjacent line of cut 107 is divided into a plurality of rectangular elements with described substrate 1001.
In step S45, the cut direction of described thermic sounding component 110 is substantially along the bearing of trend of described line of cut 107, thereby makes that in the thermo-acoustic device 40 that forms, each unit cell all forms a thermic phonation unit.Each unit cell is appreciated that described thermic sounding component 110 also can otherwise cut, as long as in the thermo-acoustic device 40 that guarantees to form, all can form a thermic phonation unit and get final product.
In step S46, described substrate 1001 cuts off along described line of cut 107, forms a plurality of thermo-acoustic devices 40 thereby described substrate 1001 is cut apart.Described cutting mode is not limit, can be identical with the method that forms described line of cut 107.
Be appreciated that step S41 and S42 can finish in a step, that is, the first surface 101 by a mask at described substrate 1001 once forms a plurality of lines of cut 107 and a plurality of recess 102.
The preparation method of thermo-acoustic device 40 described in the utility model has the following advantages: because a plurality of unit cells of first surface 101 definition of described substrate 1001, once form a plurality of first electrodes 106 and a plurality of second electrode 116 at these a plurality of unit cells, cut apart according to unit cell again after these thermic sounding component 110 once-pavings, can once form a plurality of thermic phonation units on same substrate 1001 surfaces easily, can once form a plurality of thermo-acoustic devices 40 after the cutting, therefore described preparation method can realize the industrialization of thermo-acoustic device 40.
See also Figure 13, the utility model the 5th embodiment provides a kind of thermo-acoustic device 50, and it comprises a substrate 100, a thermic sounding component 110, an insulating barrier 120, one first electrode 106 and one second electrode 116.This first electrode 106 and second electrode 116 arrange at interval and are electrically connected with this thermic sounding component 110.This substrate 100 comprise a first surface 101 and with these first surface 101 opposing second surface 103.Described first surface 101 and described second surface 103 all have a plurality of protuberances 104, and form a recess 102 between the adjacent protuberance 104, described insulating barrier 120 is arranged at first surface 101 and the second surface 103 of described substrate 100, this thermic sounding component 110 is arranged at described first surface 101 and described second surface 103 respectively, and arranges by insulating barrier 120 and described substrate 100 insulation.The described thermic sounding component 110 on each surface all has a first area 112 and a second area 114, and the thermic sounding component 110 of described first area 112 is unsettled to be arranged at described recess 102, and arrange at interval with the bottom surface of described recess 102, the thermic sounding component 110 of described second area 114 is arranged at the end face of described protuberance 104, and arranges by insulating barrier 120 and described protuberance 104 insulation.
Thermo-acoustic device 40 structures are basic identical described in the thermo-acoustic device 50 that the utility model the 5th embodiment provides and the 4th embodiment, its difference is, relative two surfaces of described substrate 100 have a plurality of recesses 102 and protuberance 104 respectively, and are provided with thermic sounding component 110.Concrete, the recess 102 of the first surface 101 of described substrate 100 can with the recess 102 corresponding settings of described second surface 103, namely the recess 102 of first surface 101 is aimed on the direction perpendicular to described substrate 100 surfaces one by one with the recess 102 of second surface 103.The recess 102 of the first surface 101 of described substrate 100 can be crisscross arranged with the recess 102 of described second surface 103, and namely the recess 102 of first surface 101 is aimed on the direction perpendicular to described substrate 100 surfaces one by one with the protuberance 104 of second surface 103; The recess 102 of described first surface 101 can be arranged in a crossed manner with the recess 102 of second surface 103, and namely the recess 102 of first surface 101 can form certain angle with the bearing of trend of the recess 102 of second surface 103.
The thermic sounding component 110 on 100 liang of surfaces of described substrate can drive simultaneously and carry out work, and then improves phonation efficiency and volume; Also can drive separately, work respectively, and can import different driving signals respectively by the control of external IC circuit, produce different sound and synthetic output.When the thermic sounding component 110 on described a certain surface can't be worked owing to damage, described another surperficial thermic sounding component 110 still can steady operation, and then the useful life of having improved described thermo-acoustic device 50.
The preparation method of described thermo-acoustic device 50 mainly may further comprise the steps:
Step S51 provides a substrate 100, described substrate 100 have a first surface and with the first surface opposing second surface;
Step S52, the first surface of the described substrate 100 of patterned process forms a plurality of being parallel to each other and groove at interval;
Step S53, the second surface of the described substrate 100 of patterned process forms a plurality of being parallel to each other and groove at interval;
Step S54 arranges an insulating barrier 120 respectively at first surface and the second surface of described substrate 100 patternings;
Step S55, insulating barrier 120 spaced surfaces between described substrate 100 first surface adjacent notches arrange one first electrode 106 and second electrode 116;
Step S56, insulating barrier 120 spaced surfaces between described substrate 100 second surface adjacent notches arrange one first electrode 106 and second electrode 116;
Step S57 arranges a stratiform carbon nano tube structure at the first surface of described substrate 100 patternings and is electrically connected the unsettled setting of layered carbon nano tubular construction of respective slot position with first electrode 106 and second electrode 116 of described first surface; And
Step S58 arranges a stratiform carbon nano tube structure at the second surface of described substrate 100 patternings and is electrically connected the unsettled setting of layered carbon nano tubular construction of respective slot position with first electrode 106 and second electrode 116 of described second surface.
The preparation method who is appreciated that described thermo-acoustic device 50 only is a specific embodiment, can reach the sequencing between each step of the suitable adjustment of experiment condition according to actual needs.
See also Figure 14, the utility model the 6th embodiment provides a kind of thermo-acoustic device 60, and it comprises a substrate 100, a thermic sounding component 110, an insulating barrier 120, one first electrode 106 and one second electrode 116.This first electrode 106 and second electrode 116 arrange at interval and are electrically connected with this thermic sounding component 110.This substrate 100 comprise a first surface 101 and with these first surface 101 opposing second surface 103.Described first surface 101 has a plurality of protuberances 104, form a recess 102 between the adjacent protuberance 104, described insulating barrier 120 is arranged at the first surface 101 of described substrate 100, and this thermic sounding component 110 is arranged at described first surface 101 and arranges by insulating barrier 120 and described substrate 100 insulation.Described thermic sounding component 110 has a first area 112 and a second area 114, and the thermic sounding component of described first area 112 110 is unsettled to be arranged at described recess 102, and arranges at interval with the bottom surface of described recess 102.The thermic sounding component 110 of described second area 114 is arranged at the end face of described protuberance 104, and arranges by insulating barrier 120 and described protuberance 104 insulation.Described second surface 103 has at least one groove 105, one integrated circuit (IC) chip 140 and embeds in the described groove 105.
Thermo-acoustic device 10 structures are basic identical described in the thermo-acoustic device 60 that the utility model the 5th embodiment provides and first embodiment, and its difference is that the second surface 103 of described substrate 100 further is integrated with an integrated circuit (IC) chip 140.
The second surface 103 of described substrate 100 has a groove 105, and described integrated circuit (IC) chip 140 embeds in the described groove 105.Because the material of described substrate 100 is silicon, therefore described integrated circuit (IC) chip 140 is formed directly in the described substrate 100, it is the second surface 103 that circuit, microelectronic element etc. in the described integrated circuit (IC) chip 140 directly is integrated in substrate 100, described substrate 100 is as the carrier of electronic circuit and microelectronic element, and described integrated circuit (IC) chip 140 is structure as a whole with described substrate 100.Further, described integrated circuit (IC) chip 140 comprises that further a third electrode 142 and one the 4th electrode 144 are electrically connected with described first electrode 106 and second electrode 116 respectively, to described thermic sounding component 110 output audio signals.Described third electrode 142 and described the 4th electrode 144 can be positioned at described substrate 100 inside and with substrate 100 electric insulations, and pass the thickness direction of described substrate 100, be electrically connected with described first electrode 106 and second electrode 116.In the present embodiment, described third electrode 142 and the 4th electrode 144 surfaces are coated with the electric insulation of insulating barrier realization and substrate 100.Be appreciated that described integrated circuit (IC) chip 140 also can be arranged at the first surface 101 of described substrate 100, thereby is omitted in the step that connecting line is set in the substrate 100 when the area of described substrate 100 is enough big.Concrete, described integrated circuit (IC) chip 140 can be arranged at a side of described first surface 101, and does not influence the operate as normal of described sounding component.Described integrated circuit (IC) chip 140 mainly comprises an audio processing modules and current processing module.In the course of the work, after the audio signal and current signal processing of described integrated circuit (IC) chip 140 with input, drive described thermic sounding component 110.Described audio processing modules has the power amplification effect to audio electrical signal, is used for inputing to this thermic sounding component 110 after the audio electrical signal amplification with input.Described current processing module is used for the direct current of importing from power interface is setovered, thereby solves the frequency multiplication problem of audio electrical signal, for described thermic sounding component 110 provides stable input current, to drive described thermic sounding component 110 operate as normal.
Because the base material of described thermo-acoustic device 60 is silicon, therefore, described integrated circuit (IC) chip 140 can directly be integrated in the described substrate, thereby can reduce to greatest extent and integrated circuit (IC) chip is set and occupation space separately, reduce the volume of thermo-acoustic device 60, be beneficial to miniaturization and integrated.And described substrate 100 has good thermal diffusivity, thereby the heat that integrated circuit (IC) chip 140 and thermic sounding component 110 produces in time can be transmitted to the external world, reduces the audio distortions that the gathering because of heat causes.
The preparation method of described thermo-acoustic device 60 mainly may further comprise the steps:
Step S61 provides a substrate 100, and described substrate 100 has opposite first 101 and second surface 103, and described first surface 101 has an insulating barrier 120;
Step S62, a plurality of recesses 102 of first surface 101 formation in described substrate 100 have a protuberance 104 between the adjacent recess 102;
Step S63 is at first surface 101 formation one insulating barrier 120 of described substrate 100;
Step S64, insulating barrier 120 surfaces of protuberance 104 positions that arrange at described interval arrange one first electrode 106 and second electrode 116;
Step S65 arranges a thermic sounding component 110 and is electrically connected with described first electrode 106 and second electrode 116; And
Step S66 arranges an integrated circuit (IC) chip 140 at the second surface 103 of described substrate 100 and is electrically connected with described thermic sounding component 110.
The preparation method of the thermo-acoustic device 60 that the utility model the 5th embodiment provides and the preparation method of described thermo-acoustic device 10 are basic identical, its difference is, comprises that further one arranges the step of an integrated circuit (IC) chip 140 at the second surface 103 of described substrate 100.
In step S66, described integrated circuit (IC) chip 140 embeds the second surface 103 of described substrate 100, concrete, can then a packaged integrated circuit (IC) chip 140 directly be arranged in the described groove 105 at second surface 103 preparations one groove 105 of described substrate 100.
Further, because the material of described substrate 100 is silicon, therefore described integrated circuit (IC) chip 140 can directly be integrated in second surface 103 and the encapsulation of described substrate 100, described integrated circuit (IC) chip 140 can be prepared by microelectronic technique commonly used such as epitaxy technique, diffusion technology, ion implantation technique, oxidation technology, photoetching process, lithographic technique, thin film deposition etc., therefore can easily described integrated circuit (IC) chip 140 directly be integrated in the described substrate 100, technology is simple, cost is low, is conducive to the integrated of described thermo-acoustic device 60.In the present embodiment, described integrated circuit (IC) chip 140 can be electrically connected with described thermic sounding component 110 by a third electrode 142 and the 4th electrode 144 are set.
In addition, those skilled in the art also can do other variations in the utility model spirit, and certainly, the variation that these are done according to the utility model spirit all should be included within the utility model scope required for protection.

Claims (17)

1. thermo-acoustic device comprises:
One substrate has a first surface and opposing second surface;
One thermic sounding component is arranged at the first surface of described substrate and arranges with described substrate insulation; And one first electrode and one second electrode gap setting and be electrically connected with described thermic sounding component;
It is characterized in that, described substrate is a silicon base, the first surface of described silicon base is formed with a plurality of grooves that are parallel to each other and arrange at interval, the degree of depth of described groove is 100 microns to 200 microns, described thermic sounding component comprises a stratiform carbon nano tube structure, and this layered carbon nano tubular construction is in the unsettled setting of described groove.
2. thermo-acoustic device as claimed in claim 1 is characterized in that, the area of described substrate is 25 square millimeters to 100 square millimeters.
3. thermo-acoustic device as claimed in claim 1 is characterized in that, the width of described groove is more than or equal to 0.2 millimeter and less than 1 millimeter.
4. thermo-acoustic device as claimed in claim 1, it is characterized in that, layered carbon nano tube structure is the layer structure that a plurality of carbon nano-tube are formed, these a plurality of carbon nano-tube are extended in the same direction, and the bearing of trend of described a plurality of carbon nano-tube and the bearing of trend of described groove form an angle, and this angle is spent smaller or equal to 90 greater than 0 degree.
5. thermo-acoustic device as claimed in claim 4, it is characterized in that, layered carbon nano tube structure comprises a carbon nano-tube film, described carbon nano-tube film is the membrane structure that the carbon nano-tube of a plurality of extensions of preferred orientations is in the same direction formed, and these a plurality of carbon nano-tube are parallel to the first surface of described substrate.
6. thermo-acoustic device as claimed in claim 4 is characterized in that, layered carbon nano tube structure comprises a plurality of carbon nano tube lines that are parallel to each other and arrange at interval in described groove location.
7. thermo-acoustic device as claimed in claim 4, it is characterized in that, layered carbon nano tube structure comprises a plurality of carbon nano tube lines parallel and that arrange at interval, the bearing of trend of described a plurality of carbon nano tube lines and the bearing of trend of described groove form an angle, this angle greater than 0 degree smaller or equal to 90 degree, described carbon nano tube line comprise a plurality of carbon nano-tube along the length direction of this carbon nano tube line be arranged in parallel or along the length direction of this carbon nano tube line in the shape of a spiral shape arrange.
8. thermo-acoustic device as claimed in claim 6 is characterized in that, is spaced apart 0.1 micron to 200 microns between the adjacent carbon nano tube line.
9. thermo-acoustic device as claimed in claim 1 is characterized in that, described thermic sounding component insulate by insulating barrier and a described substrate that is arranged at the substrate first surface.
10. thermo-acoustic device as claimed in claim 1, it is characterized in that, comprise that further a plurality of first electrodes and a plurality of second electrode are arranged alternately the substrate surface between described adjacent notches, described a plurality of first electrode forms one first comb electrode, a plurality of second electrodes form one second comb electrode, the insertion setting that described first comb electrode and second comb electrode are interlaced.
11. thermo-acoustic device as claimed in claim 1 is characterized in that, the second surface of described substrate comprises that further an integrated circuit (IC) chip is electrically connected with described thermic sounding component, to described thermic sounding component input signal.
12. thermo-acoustic device as claimed in claim 11 is characterized in that, described integrated circuit (IC) chip directly prepares on this silicon base by microelectronic technique.
13. thermo-acoustic device as claimed in claim 12 is characterized in that, described integrated circuit (IC) chip is electrically connected with described first electrode and second electrode respectively, and the output audio signal of telecommunication is given described thermic sounding component.
14. a thermo-acoustic device comprises:
One substrate has a first surface and opposing second surface;
One thermic sounding component is arranged at the first surface of described substrate and arranges with described substrate insulation; And one first electrode and one second electrode gap setting and be electrically connected with described thermic sounding component;
It is characterized in that, the recess that the first surface of described substrate is formed with a plurality of even distributions and arranges at interval, described concave depth is 100 microns to 200 microns, and described thermic sounding component comprises a stratiform carbon nano tube structure, and this layered carbon nano tubular construction is in the unsettled setting in described recess place.
15. thermo-acoustic device as claimed in claim 14 is characterized in that, the second surface of described substrate further is provided with the recess identical with first surface and thermic sounding component.
16. thermo-acoustic device as claimed in claim 14 is characterized in that, described recess is to be a plurality of shrinkage pools that array arranges.
17. a thermo-acoustic device comprises:
One substrate has a first surface and opposing second surface;
One thermic sounding component is arranged at the first surface of described substrate and arranges with described substrate insulation; And one first electrode and one second electrode gap setting and be electrically connected with described thermic sounding component;
It is characterized in that, the first surface of described substrate is formed with a plurality of recesses, one first insulating barrier and one second insulating barrier are cascadingly set on the first surface of substrate between the described recess, and described a plurality of recess is exposed, one the 3rd insulating barrier arranges and covers side and the bottom surface of first insulating barrier and second insulating barrier and the described recess of described stacked setting continuously, described thermic sounding component is arranged on the surface of described the 3rd insulating barrier, and with respect to the unsettled setting of part at described recess location place.
CN 201220615436 2012-11-20 2012-11-20 Thermoacoustic device Expired - Lifetime CN203167267U (en)

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CN105100983A (en) * 2014-04-30 2015-11-25 清华大学 Earphone
CN106612486A (en) * 2015-10-27 2017-05-03 清华大学 Thermally-induced sound production device manufacturing method and device
CN103841500B (en) * 2012-11-20 2018-01-30 清华大学 Thermo-acoustic device
CN109153573A (en) * 2016-05-02 2019-01-04 琳得科株式会社 The method of modifying of carbon nanotube pieces, carbon nanotube pieces modified, the manufacturing method of bonding sheet and bonding sheet
CN111527757A (en) * 2018-02-19 2020-08-11 株式会社村田制作所 Thermally excited acoustic wave generating device and acoustic wave generating system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103841500B (en) * 2012-11-20 2018-01-30 清华大学 Thermo-acoustic device
CN105100983A (en) * 2014-04-30 2015-11-25 清华大学 Earphone
CN105100983B (en) * 2014-04-30 2018-05-01 清华大学 Earphone
CN106612486A (en) * 2015-10-27 2017-05-03 清华大学 Thermally-induced sound production device manufacturing method and device
CN106612486B (en) * 2015-10-27 2019-04-05 清华大学 A kind of preparation method and device of thermo-acoustic device
CN109153573A (en) * 2016-05-02 2019-01-04 琳得科株式会社 The method of modifying of carbon nanotube pieces, carbon nanotube pieces modified, the manufacturing method of bonding sheet and bonding sheet
CN111527757A (en) * 2018-02-19 2020-08-11 株式会社村田制作所 Thermally excited acoustic wave generating device and acoustic wave generating system
CN111527757B (en) * 2018-02-19 2021-06-18 株式会社村田制作所 Thermally excited acoustic wave generating device and acoustic wave generating system

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