CN203132562U - Linear thin-film magnetoresistive sensor, linear thin-film magnetoresistive sensor circuit, closed-loop current sensor and open-loop current sensor - Google Patents
Linear thin-film magnetoresistive sensor, linear thin-film magnetoresistive sensor circuit, closed-loop current sensor and open-loop current sensor Download PDFInfo
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- CN203132562U CN203132562U CN201220291630.5U CN201220291630U CN203132562U CN 203132562 U CN203132562 U CN 203132562U CN 201220291630 U CN201220291630 U CN 201220291630U CN 203132562 U CN203132562 U CN 203132562U
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Abstract
The utility model relates to a linear thin-film magnetoresistive sensor, a linear thin-film magnetoresistive sensor circuit, a closed-loop current sensor and an open-loop current sensor. The linear thin-film magnetoresistive sensor comprises a seed layer, a reference layer, a non-magnetic isolation layer and a magnetic free layer, wherein the reference layer is positioned on the seed layer and is provided with a first magnetic moment; the non-magnetic isolation layer is positioned on the reference layer for isolating the reference layer and the magnetic free layer; the magnetic free layer is positioned on the non-magnetic isolation layer and is provided with a second magnetic moment; and the second magnetic moment is provided with anisotropism vertical to a membrane surface, and the direction of the second magnetic moment is mutually vertical to that of the first magnetic moment. According to the linear thin-film magnetoresistive sensor, because the second magnetic moment of the magnetic free layer is provided with the anisotropism vertical to the membrane surface, the magnetic free layer shows extremely low magnetic retardation in the direction parallel to the membrane surface, and the low saturation field ensures that the formed magnetoresistive sensor has high sensitivity; and the magnetic retardation is tiny, the accuracy and linearity are high, the linear range can be adjusted, the process is simple, the response frequency is high, the cost is low, the anti-interference property is strong, and the temperature property is good.
Description
Technical field
The utility model relates to a kind of sensor, and especially a kind of linear thin-film magnetoresistive sensor, linear thin-film magnetoresistive sensor circuit and closed loop current sensor and open-loop current sensor belong to the technical field of thin-film magnetoresistive sensor.
Background technology
The thin-film magnetoresistive sensor element be widely used field of data storage (hard disc of computer, MRAM), the fields of measurement of electric current, position measurement, the movement of object and speed, the fields of measurement of angle and angular velocity etc.
The thin-film magnetoresistive sensor element has multi-layer film structure, spin valve structure.Multi-layer film structure comprises magnetosphere and nonmagnetic layer, and what they replaced is deposited on the substrate.Spin valve structure comprise non magnetic pinning layer (MnIr, MnPt), magnetic nailed layer (CoFeB, CoFe, or SAF structure C oFe/Ru/CoFe etc.), non magnetic separation layer (Cu, AlO, MgO, HfO, ZrO, TaO etc.), the magnetic free layer (CoFeB, CoFe, or SAF structure C oFe/Ru/CoFe etc.).
The thin-film magnetoresistive sensor element because the magnetic material of free layer itself has hysteresis, has backhaul poor when the measure analog amount during measurement, have influence on the precision of measurement and the linearity of measurement.1), utilize the shape anisotropic of free layer can provide one to treat the measuring magnetic field bias magnetic field perpendicular to the external world usually the method that adopts for fear of this phenomenon is:.2), around the free layer of thin-film magnetoresistive sensor element, deposition one deck permanent magnetic thin film provides one to treat measuring magnetic field bias magnetic field (hard disc of computer adopts this scheme) perpendicular to the external world by permanent magnetic thin film.3), around the free layer of thin-film magnetoresistive sensor element, deposit an electric current line, provide a bias magnetic field by electric current.4), utilize antiferromagnet (MnIr/MnPt) to provide one of free layer to treat the measuring magnetic field bias magnetic field perpendicular to the external world.
Adopt the characteristics of first method to be: technology is simple, but the bias magnetic field that the shape anisotropic provides is limited, and has limited the design of chip.Adopt the characteristics of second method to be: the big I of bias magnetic field is changed by the composition of reconciling permanent magnetic thin film and thickness, but to avoid the interference of big external magnetic field in actual applications, if the interference in big magnetic field is arranged, can change the direction of bias magnetic field, thereby influence the performance of sensor.Adopt the characteristics of the third method to be: the big I of bias magnetic field is reconciled by the size that changes electric current, but the power consumption of sensor can be very big.Adopt the characteristics of the 4th kind of method to be: the big I of bias magnetic field is changed by the thickness of the thickness of reconciling antiferromagnet and free layer or material, but the thermal stability of this structure is relatively poor in actual applications, and present material is difficult to make the stability of sensor to reach more than 200 degrees centigrade.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, a kind of linear thin-film magnetoresistive sensor, linear thin-film magnetoresistive sensor circuit and closed loop current sensor and open-loop current sensor are provided, its compact conformation, magnetic hysteresis is little, precision and linearity height, adjustable linear range, technology is simple, cost is low, and strong interference immunity and temperature stability are good.
According to the technical scheme that the utility model provides, described linear thin-film magnetoresistive sensor comprises Seed Layer; Reference layer is positioned on the described Seed Layer, has first magnetic moment; Non magnetic separation layer is positioned on the described reference layer, and reference layer and magnetic free layer are isolated; The magnetic free layer is positioned on the non magnetic separation layer, has second magnetic moment, and described second magnetic moment has the anisotropy perpendicular to face, and the direction of second magnetic moment is vertical mutually with the direction of first magnetic moment.
When second magnetic moment of described magnetic free layer produces perpendicular to the anisotropy of face under the crystalline network effect of non magnetic separation layer, the material of magnetic free layer comprises CoFeB, or the composite bed of CoFeB and Ta formation, or the composite bed of the composite bed of CoFeB, Ru and Ta formation or CoFeB, Ta, Ru and Ta formation.
The material of described magnetic free layer comprises the composite bed of composite bed, CoFeB and Pt formation that composite bed, Co and the Pt of composite bed, Co and Pd formation that CoFe and Pt formation composite bed, CoFe and Pd form form or the composite bed of CoFeB and Pd formation.
Described reference layer comprises non magnetic pinning layer and magnetic nailed layer, and described non magnetic pinning layer is positioned on the Seed Layer, and the magnetic nailed layer is positioned on the non magnetic pinning layer; Non magnetic pinning layer and magnetic nailed layer produce exchange coupling field, and described exchange coupling field has first magnetic moment at the magnetic nailed layer.
The material of described non magnetic separation layer comprises Cu, AlO, MgO, HfO, ZrO or TaO.
The material of described non magnetic pinning layer comprises MnIr, MnPt or MnFe; The material of described magnetic nailed layer comprises the composite bed of composite bed, CoFe, Ru, CoFeB, Ta and CoFeB formation that composite bed, CoFe, Ru and the CoFe of CoFe and CoFeB formation form or the composite bed that CoFe, Ta, CoFe, Ru and CoFeB form.
A kind of linear thin-film magnetoresistive sensor circuit comprises the first linear thin-film magnetoresistive sensor and the second linear thin-film magnetoresistive sensor, and the described first linear thin-film magnetoresistive sensor, the second linear thin-film magnetoresistive sensor form half-bridge circuit; The first magnetic moment direction antiparallel of first magnetic moment direction of the first linear thin-film magnetoresistive sensor internal reference layer and the second linear thin-film magnetoresistive sensor internal reference frame; Reverse second magnetic moment direction with the interior magnetic free layer of the second linear thin-film magnetoresistive sensor of second magnetic moment of magnetic free layer is parallel to each other in the first linear thin-film magnetoresistive sensor.
Also comprise the 3rd linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor, the described first linear thin-film magnetoresistive sensor, the second linear thin-film magnetoresistive sensor, the 3rd linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor form Wheatstone bridge; Wherein, the described first linear thin-film magnetoresistive sensor, the second linear thin-film magnetoresistive sensor, the 3rd linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor form the brachium pontis of above-mentioned Wheatstone bridge respectively, the first linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor are positioned on two corresponding brachium pontis of Wheatstone bridge, the second linear thin-film magnetoresistive sensor and the 3rd linear thin-film magnetoresistive sensor are positioned on two corresponding brachium pontis of Wheatstone bridge, the brachium pontis adjacency of the Wheatstone bridge at the brachium pontis of the Wheatstone bridge at the first linear thin-film magnetoresistive sensor place and the second linear thin-film magnetoresistive sensor and the 3rd linear thin-film magnetoresistive sensor place;
Second corresponding in the first linear thin-film magnetoresistive sensor, the second linear thin-film magnetoresistive sensor, the 3rd linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor magnetic moment direction is parallel to each other; First magnetic moment direction in the first linear thin-film magnetoresistive sensor and first magnetic moment direction in the 4th linear thin-film magnetoresistive sensor are parallel to each other, and first magnetic moment direction in the second linear thin-film magnetoresistive sensor parallels with first magnetic moment direction in the 3rd linear thin-film magnetoresistive sensor.
A kind of closed loop current sensor comprises magnetism gathering rings, and described magnetism gathering rings links to each other with the voltage input end of Wheatstone bridge, and the output terminal of Wheatstone bridge links to each other with amplifier input terminal; Be wound with secondary coil on the magnetism gathering rings, after described secondary coil was wrapped on the magnetism gathering rings, an end of secondary coil linked to each other with the output terminal of amplifier, and the other end is by pull-up resistor ground connection.
A kind of open-loop current sensor comprises current lead, and described current lead is integrated on the Wheatstone bridge, and the current path of current lead is through the linear thin-film magnetoresistive sensor on the brachium pontis of Wheatstone bridge.
Advantage of the present utility model: non magnetic pinning layer and magnetic nailed layer form reference layer, and reference layer has first magnetic moment direction; The magnetic free layer has second magnetic direction, and second magnetic direction has the anisotropy perpendicular to face, and the direction of second magnetic moment is vertical mutually with the direction of first magnetic moment.Because second magnetic moment of magnetic free layer has the anisotropy perpendicular to face, the magnetic free layer shows extremely low magnetic hysteresis in the direction that is parallel to face, and lower saturation field, makes that forming magnetoresistive transducer has higher sensitivity; The saturation field size that the magnetic free layer is parallel to face can have the anisotropic size adjustment perpendicular to face.Utilize thin-film magnetoresistive sensor of the present utility model can also form the band magnetism gathering rings the closed loop current sensor and not with the open-loop current sensor of magnetism gathering rings, magnetic hysteresis is little, precision and linearity height, adjustable linear range, technology is simple, the response frequency height, cost is low, strong interference immunity and good temp characteristic.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 concerns synoptic diagram between second magnetic moment direction and externally-applied magnetic field in the linear thin-film magnetoresistive sensor of the utility model.
Fig. 3 is the instrumentation plan of the linear thin-film magnetoresistive sensor of the utility model.
Fig. 4 is the schematic diagram that is formed half-bridge circuit by the linear thin-film magnetoresistive sensor of two the utility model.
Fig. 5 is the synoptic diagram that concerns between half-bridge circuit among Fig. 4 and externally-applied magnetic field.
Fig. 6 is the schematic diagram that is formed full-bridge circuit by the linear thin-film magnetoresistive sensor of four the utility model.
Fig. 7 is the synoptic diagram that concerns between full-bridge circuit among Fig. 6 and externally-applied magnetic field.
Fig. 8 forms the structural representation of the closed loop current sensor that has magnetism gathering rings for the utility model.
Fig. 9 forms not structural representation with the closed loop current sensor of magnetism gathering rings for the utility model.
The 1-Seed Layer; the non magnetic pinning layer of 2-; 3-magnetic nailed layer; the non magnetic separation layer of 4-; 5-magnetic free layer; the 6-protective seam; 7-first magnetic moment direction; 8-second magnetic moment direction; the 9-externally-applied magnetic field; the 10-second magnetic moment first direction; the 11-second magnetic moment second direction; the 12-second magnetic moment third direction; 211-first voltage input end; 212-first voltage output end; 213-second voltage input end; the 214-half-bridge circuit first linear thin-film magnetoresistive sensor; the 215-half-bridge circuit second linear thin-film magnetoresistive sensor; first magnetic moment direction in the 216-half-bridge circuit first linear thin-film magnetoresistive sensor; 217-half-bridge circuit second linear thin-film magnetoresistive sensor first magnetic moment direction; 218-half-bridge circuit first linear thin-film magnetoresistive sensor second magnetic moment direction; 219-half-bridge circuit second linear thin-film magnetoresistive sensor second magnetic moment direction; the 311-full-bridge circuit first linear thin-film magnetoresistive sensor; the 312-full-bridge circuit second linear thin-film magnetoresistive sensor; 313-full-bridge circuit the 3rd linear thin-film magnetoresistive sensor; 314-full-bridge circuit the 4th linear thin-film magnetoresistive sensor; 315-tertiary voltage input end; 316-the 4th voltage input end; 317-second voltage output end; 318-tertiary voltage output terminal; 321-full-bridge circuit first linear thin-film magnetoresistive sensor first magnetic moment direction; 322-full-bridge circuit second linear thin-film magnetoresistive sensor first magnetic moment direction; 323-full-bridge circuit the 4th linear thin-film magnetoresistive sensor first magnetic moment direction; 324-full-bridge circuit the 3rd linear thin-film magnetoresistive sensor first magnetic moment direction; 331-full-bridge circuit first linear thin-film magnetoresistive sensor second magnetic moment direction; 332-full-bridge circuit second linear thin-film magnetoresistive sensor second magnetic moment direction; 333-full-bridge circuit the 3rd linear thin-film magnetoresistive sensor second magnetic moment direction; 334-full-bridge circuit the 4th linear thin-film magnetoresistive sensor second magnetic moment direction; 411-measures lead; the 412-magnetism gathering rings; the 413-Wheatstone bridge; the 414-first Wheatstone bridge output terminal; the 415-second Wheatstone bridge output terminal; the 416-amplifier; the 417-secondary coil; the 418-pull-up resistor; 419-closed loop current sensor output terminal; 511-first current input terminal; 512-second current input terminal; 513-the 5th voltage input end; 514-the 6th voltage output end; 515-the 4th voltage output end; 516-the 5th voltage output end; the 517-current lead; the 518-induced field; 521-full-bridge circuit the 5th linear thin-film magnetoresistive sensor; 522-full-bridge circuit the 6th linear thin-film magnetoresistive sensor; 523-full-bridge circuit the 7th linear thin-film magnetoresistive sensor; 524-full-bridge circuit the 8th linear thin-film magnetoresistive sensor; 531-full-bridge circuit the 7th linear thin-film magnetoresistive sensor second magnetic moment direction; 532-full-bridge circuit the 8th linear thin-film magnetoresistive sensor second magnetic moment direction; 533-full-bridge circuit the 5th linear thin-film magnetoresistive sensor second magnetic moment direction; 534-full-bridge circuit the 6th linear thin-film magnetoresistive sensor second magnetic moment direction; 535-full-bridge circuit the 7th linear thin-film magnetoresistive sensor first magnetic moment direction; 536-full-bridge circuit the 8th linear thin-film magnetoresistive sensor first magnetic moment direction; 537-full-bridge circuit the 5th linear thin-film magnetoresistive sensor first magnetic moment direction and 538-full-bridge circuit the 6th linear thin-film magnetoresistive sensor first magnetic moment direction.
Embodiment
The utility model is described in further detail below in conjunction with concrete drawings and Examples.
As shown in Figure 1: the utility model comprises Seed Layer 1; Reference layer is positioned on the described Seed Layer 1, has first magnetic moment; Non magnetic separation layer 4 is positioned on the described reference layer, and reference layer and magnetic free layer 5 are isolated; Magnetic free layer 5 is positioned on the non magnetic separation layer 4, has second magnetic moment, and described second magnetic moment has the anisotropy perpendicular to face, and the direction of second magnetic moment is vertical mutually with the direction of first magnetic moment.
Because second magnetic moment of magnetic free layer 5 has the anisotropy perpendicular to face, magnetic free layer 5 shows extremely low magnetic hysteresis in the direction that is parallel to face, and lower saturation field, makes that forming magnetoresistive transducer has higher sensitivity; The saturation field size that magnetic free layer 5 is parallel to face can have the anisotropic size adjustment perpendicular to face.First magnetic moment direction of reference layer is parallel to face, when second magnetic moment of described magnetic free layer 5 produces perpendicular to the anisotropy of face under the crystalline network effect of non magnetic separation layer 4, at this moment, the material of magnetic free layer 5 comprises CoFeB, or the composite bed of CoFeB and Ta formation, or the composite bed of the composite bed of CoFeB, Ru and Ta formation or CoFeB, Ta, Ru and Ta formation.In addition, when magnetic free layer 5 also can produce the anisotropy that has perpendicular to face under specific material effects, the material of described magnetic free layer 5 comprised the composite bed of composite bed, CoFeB and Pt formation of composite bed, Co and Pt formation that composite bed that CoFe and Pt form composite bed, CoFe and Pd and form, Co and Pd form or the composite bed of CoFeB and Pd formation; Simultaneously, magnetic free layer 5 multi-layer film structure that also can be formed by above-mentioned composite bed.
Described reference layer comprises non magnetic pinning layer 2 and magnetic nailed layer 3, and described non magnetic pinning layer 2 is positioned on the Seed Layer 1, and magnetic nailed layer 3 is positioned on the non magnetic pinning layer 2; Non magnetic pinning layer 2 produces exchange coupling field with magnetic nailed layer 3, and described exchange coupling field has first magnetic moment at magnetic nailed layer 3.
On the described magnetic free layer 5 protective seam 6 is set.
The material of described non magnetic separation layer 4 comprises Cu, AlO, MgO, HfO, ZrO or TaO.
The material of described non magnetic pinning layer 2 comprises MnIr, MnPt or MnFe; The material of described magnetic nailed layer 3 comprises the composite bed of composite bed, CoFe, Ru, CoFeB, Ta and CoFeB formation that composite bed, CoFe, Ru and the CoFe of CoFe and CoFeB formation form or the composite bed that CoFe, Ta, CoFe, Ru and CoFeB form.
The process conditions that the utility model prepares linear thin-film magnetoresistive sensor are process conditions of industry internal standard; personnel are known by the art; only do simple statement here; 1), when non magnetic separation layer 4 is metal is roughly:, adopt technique for vacuum coating to prepare following structure: Seed Layer 1, non magnetic pinning layer 2; magnetic nailed layer 3; non magnetic separation layer 4, magnetic free layer 5, protective seam 6.2) if non magnetic separation layer 4 is oxides, adopt vacuum coating to prepare following structure: Seed Layer 1, non magnetic pinning layer 2, magnetic nailed layer 3; Prepare non magnetic separation layer, non magnetic oxide isolation layer then, the free layer 5 of vacuum coating magnetic again and protective seam 6.
After the said structure film had plated, the direction of the exchange coupling field that magnetic nailed layer 3 and non-diamagnetism pinning layer 2 produce was determined in the beginning tempering.Under higher temperature, strengthen external magnetic field, the direction of external magnetic field is consistent with the direction of the exchange coupling field of wanting, and generally is parallel to the direction of external magnetic field to be measured.
Second magnetic moment direction 8 of magnetic free layer 5 is vertical mutually with first magnetic moment direction 7 of magnetic nailed layer 3 perpendicular to the anisotropic of face, and second magnetic moment direction 8 of magnetic free layer 5 is along with the size and Orientation of externally-applied magnetic field 9 changes and changes.The utility model can be used for magnetic field, electric current, and the position, mobile, angle, measurements such as angular velocity.
The principle of work of the linear thin-film magnetoresistive sensor that the utility model obtains is: second magnetic moment direction 8 of the magnetic resistance magnetic free layer 5 of thin-film magnetoresistive sensor changes with the variation of the angle of first magnetic moment direction 7 of magnetic nailed layer 3.When second magnetic moment direction 8 of magnetic free layer 5 changed along with the change of the size and Orientation of externally-applied magnetic field 9, the magnetic resistance of thin-film magnetoresistive sensor element also changed thereupon.As shown in Figure 2, when first magnetic moment direction 7 of the direction of externally-applied magnetic field 9 and magnetic nailed layer 3 is parallel, when the intensity of externally-applied magnetic field 9 is greater than H1 simultaneously, second magnetic moment direction 8 of magnetic free layer 5 is parallel with the direction of externally-applied magnetic field 9, and then it is parallel with first magnetic moment direction 7 of magnetic nailed layer 3, as the second magnetic moment first direction 10 among Fig. 2, namely the second magnetic moment first direction 10 and first magnetic moment direction 7 are parallel to each other, at this moment the magnetic resistance minimum of thin-film magnetoresistive sensor element.When first magnetic moment direction, 7 antiparallels of the direction of externally-applied magnetic field 9 and magnetic nailed layer 3, when the intensity of externally-applied magnetic field 9 is greater than H2 simultaneously, second magnetic moment direction 8 of magnetic free layer 5 is parallel with the direction of externally-applied magnetic field 9, and then with first magnetic moment direction, 7 antiparallels of magnetic nailed layer 3, shown in the second magnetic moment third direction 12 among Fig. 2, the i.e. second magnetic moment third direction 12 and first magnetic moment direction, 7 antiparallels, at this moment the magnetic resistance maximum of thin-film magnetoresistive sensor element.When the magnetic field intensity of externally-applied magnetic field 9 is zero, second magnetic moment direction 8 of magnetic free layer 5 is vertical mutually with first magnetic moment direction 7 of magnetic nailed layer 3, at this moment the magnetic resistance of thin-film magnetoresistive sensor is for this magnetic resistance is half of maximal value and minimum value sum, situation when being second magnetic moment direction 8 for the second magnetic moment second direction 11 among Fig. 2.Magnetic field range between H1 and H2 is exactly the measurement range of thin-film magnetoresistive sensor.
As shown in Figure 3: be thin-film magnetoresistive sensor element measurement result, when the field intensity of externally-applied magnetic field 9 be-during 140Oe, second magnetic moment direction 8 of magnetic free layer 5 is parallel with first magnetic moment direction 7 of magnetic nailed layer 3, as the second magnetic moment first direction 10 among Fig. 3, at this moment the magnetic resistance of thin-film magnetoresistive sensor element minimum is 1K ohm.When the field intensity of externally-applied magnetic field 9 is 140Oe, second magnetic moment direction 8 of magnetic free layer 5 and first magnetic moment direction, 7 antiparallels of magnetic nailed layer 3, shown in the second magnetic moment third direction 12 among Fig. 3, at this moment the magnetic resistance of thin-film magnetoresistive sensor element is 1.7K ohm to the maximum.When externally-applied magnetic field 9 was zero, second magnetic moment direction 8 of magnetic free layer 5 was vertical mutually with first magnetic moment direction 7 of magnetic nailed layer 3, at this moment the magnetic resistance of thin-film magnetoresistive sensor be maximal value add minimum value value sum half be 1.35K ohm.
As shown in Figure 4 and Figure 5: cooperate the schematic diagram that forms half-bridge circuit for utilizing the linear thin-film magnetoresistive sensor of the utility model, can be used in by half-bridge circuit and measure required analog quantity.Described half-bridge circuit comprises the half-bridge circuit first linear thin-film magnetoresistive sensor 214 and the half-bridge circuit second linear thin-film magnetoresistive sensor 215, the half-bridge circuit first linear thin-film magnetoresistive sensor 214 is electrically connected with first voltage input end 211, the half-bridge circuit second linear thin-film magnetoresistive sensor 215 links to each other with second voltage input end 213, links to each other with first voltage output end 212 after the half-bridge circuit first linear thin-film magnetoresistive sensor 214 is connected with half-bridge circuit second thin-film magnetoresistive sensor 215.The first half-bridge circuit 214 and the linear film magnetoresistive sensor bridge circuit second linear film magnetoresistive sensor 215 constitutes a half-bridge circuit; half-bridge circuit first linear film magnetoresistive sensor bridge circuit 214 first linear film magnetoresistive the first moment direction sensor 216 and the half-bridge circuit second linear film magnetoresistive sensor bridge circuit 215 second linear film magnetoresistive sensor first antiparallel magnetization direction 217, the half-bridge circuit first linear film magnetoresistive sensor 214 the half-bridge circuit first linear film magnetoresistive sensor 218 and a second half-bridge circuit moment direction second linear film magnetoresistive sensor bridge circuit 215 second linear magnetic moments of the film magnetoresistive sensor second direction 219 parallel to each other.Half-bridge circuit first linear thin-film magnetoresistive sensor first magnetic moment direction 216 is corresponding to the same with aforementioned first magnetic moment direction 7, half-bridge circuit second linear thin-film magnetoresistive sensor second magnetic moment direction 218 is corresponding to the same with aforementioned second magnetic moment direction 8, following identical, do not describing in detail.
By the half-bridge circuit first linear thin-film magnetoresistive sensor 214 with the principle of work that the half-bridge circuit second linear thin-film magnetoresistive sensor 215 forms half-bridge circuit be: the output voltage V of described half-bridge circuit is along with the direction of externally-applied magnetic field 9 and the change of size change.When the direction of externally-applied magnetic field 9 for negative (-) and magnetic field intensity during greater than H1, the output voltage of described half-bridge circuit is minimum.When the direction of externally-applied magnetic field 9 when just (+) and magnetic field intensity are greater than H2, the output voltage of described half-bridge circuit is the highest.The magnetic field range of the intensity of externally-applied magnetic field 9 between H1 and H2 is exactly the measurement range of described half-bridge circuit.
As shown in Figure 6 and Figure 7: cooperate the schematic diagram that forms full-bridge circuit for utilizing the linear thin-film magnetoresistive sensor of the utility model, wherein, described full-bridge circuit comprises the full-bridge circuit first linear thin-film magnetoresistive sensor 311, the full-bridge circuit second linear thin-film magnetoresistive sensor 312, full-bridge circuit the 3rd linear thin-film magnetoresistive sensor 313 and full-bridge circuit the 4th linear thin-film magnetoresistive sensor 314.The full-bridge circuit first linear thin-film magnetoresistive sensor 311 links to each other with the full-bridge circuit second linear thin-film magnetoresistive sensor 312 and full-bridge circuit the 3rd linear thin-film magnetoresistive sensor 313, full-bridge circuit the 4th linear thin-film magnetoresistive sensor 314 links to each other with the full-bridge circuit second linear thin-film magnetoresistive sensor 312 and full-bridge circuit the 3rd linear thin-film magnetoresistive sensor 313, and the full-bridge circuit first linear thin-film magnetoresistive sensor 311 links to each other with tertiary voltage input end 315 with the end that full-bridge circuit the 3rd linear thin-film magnetoresistive sensor 313 links to each other, the full-bridge circuit second linear thin-film magnetoresistive sensor 312 links to each other with the 4th voltage input end 216 with the end that full-bridge circuit the 4th linear thin-film magnetoresistive sensor 314 links to each other, the full-bridge circuit first linear thin-film magnetoresistive sensor 311 links to each other with second voltage output end 317 with the end that the full-bridge circuit second linear thin-film magnetoresistive sensor 312 links to each other, and full-bridge circuit the 3rd linear thin-film magnetoresistive sensor 313 links to each other with tertiary voltage output terminal 318 with the end that full-bridge circuit the 4th linear thin-film magnetoresistive sensor 314 links to each other.
After above-mentioned connection cooperates, full-bridge circuit first linear thin-film magnetoresistive sensor first magnetic moment direction 321 of the full-bridge circuit first linear thin-film magnetoresistive sensor 311 parallels with full-bridge circuit the 4th linear thin-film magnetoresistive sensor first magnetic moment direction 323 of full-bridge circuit the 4th linear thin-film magnetoresistive sensor 314, full-bridge circuit second linear thin-film magnetoresistive sensor first magnetic moment direction 322 of the full-bridge circuit second linear thin-film magnetoresistive sensor 312 is parallel to each other full-bridge circuit first linear thin-film magnetoresistive sensor first magnetic moment direction 321 and full-bridge circuit second linear thin-film magnetoresistive sensor first magnetic moment direction 322 antiparallels with full-bridge circuit the 3rd linear thin-film magnetoresistive sensor first magnetic moment direction 324 of full-bridge circuit the 3rd linear thin-film magnetoresistive sensor 313.Full-bridge circuit first linear thin-film magnetoresistive sensor second magnetic moment direction 331, full-bridge circuit second linear thin-film magnetoresistive sensor second magnetic moment direction 332, full-bridge circuit the 3rd linear thin-film magnetoresistive sensor second magnetic moment direction 333 and full-bridge circuit the 4th linear thin-film magnetoresistive sensor second magnetic moment direction 334 are parallel to each other.
The principle of work of above-mentioned full-bridge circuit is: the output voltage of described full-bridge circuit is the magnitude of voltage of the magnitude of voltage-tertiary voltage output terminal 318 of V=Vout (+)-Vout (-)=second voltage output end 317; Described full-bridge circuit output voltage is along with the direction of externally-applied magnetic field 9 changes with big or small change.When the direction of externally-applied magnetic field 9 for negative (-) and magnetic field intensity during greater than H1, the output voltage of described full-bridge circuit is minimum.When the direction of externally-applied magnetic field 9 when just (+) and magnetic field intensity are greater than H2, the output voltage of described full-bridge circuit is the highest.Magnetic field range between magnetic field intensity H1 and the H2 is exactly the measurement range of the utility model full-bridge circuit.
As shown in Figure 8: form the structural representation of closed loop current sensor for the utility model utilizes Wheatstone bridge and magnetism gathering rings 412.Among the utility model embodiment, the structure of Wheatstone bridge 413 can adopt the structure among Fig. 6.Described magnetism gathering rings 412 links to each other with the voltage input end of Wheatstone bridge 413, and Wheatstone bridge first output terminal 414, Wheatstone bridge second output terminal 415 of Wheatstone bridge 413 link to each other with the input end of amplifier 416; Be wound with secondary coil 417 on the magnetism gathering rings 214, after described secondary coil 417 is wrapped on the magnetism gathering rings 412, one end of secondary coil 417 links to each other with the output terminal of amplifier 416, the other end is by pull-up resistor 418 ground connection, and the end that secondary coil 417 links to each other with pull-up resistor 418 forms closed loop current sensor output terminal 419.Measure lead 411 and pass magnetism gathering rings 412, the closed loop current sensor in the present embodiment is based on the magnetic balance principle of work, is known by the art, is not described in detail herein.
As shown in Figure 9: for not having the current sensor schematic diagram of magnetism gathering rings 412.Comprise full-bridge circuit the 5th linear thin-film magnetoresistive sensor 521, full-bridge circuit the 6th linear thin-film magnetoresistive sensor 522, full-bridge circuit the 7th linear thin-film magnetoresistive sensor 523 and full-bridge circuit the 8th linear thin-film magnetoresistive sensor 524 in the present embodiment.Full-bridge circuit the 5th linear thin-film magnetoresistive sensor 521 links to each other with full-bridge circuit the 6th linear thin-film magnetoresistive sensor 522 and full-bridge circuit the 7th linear thin-film magnetoresistive sensor 523, full-bridge circuit the 6th linear thin-film magnetoresistive sensor 522 and full-bridge circuit the 7th linear thin-film magnetoresistive sensor 523 all are connected with full-bridge circuit the 8th linear thin-film magnetoresistive sensor 524, full-bridge circuit the 5th linear thin-film magnetoresistive sensor 521, full-bridge circuit the 6th linear thin-film magnetoresistive sensor 522, full-bridge circuit the 7th linear thin-film magnetoresistive sensor 523 and full-bridge circuit the 8th linear thin-film magnetoresistive sensor 524 also form wheatstone bridge configuration.Full-bridge circuit the 6th linear thin-film magnetoresistive sensor 522 and full-bridge circuit the 7th linear thin-film magnetoresistive sensor 523 link to each other with the 5th voltage input end 513, and the 6th voltage input end 514 of full-bridge circuit the 5th linear thin-film magnetoresistive sensor 521 and full-bridge circuit the 8th linear thin-film magnetoresistive sensor 524 links to each other.The end that full-bridge circuit the 6th linear thin-film magnetoresistive sensor 522, full-bridge circuit the 8th linear thin-film magnetoresistive sensor 524 link to each other links to each other with the 4th voltage output end 515, and full-bridge circuit the 5th linear thin-film magnetoresistive sensor 521, full-bridge circuit the 7th linear thin-film magnetoresistive sensor 523 link to each other with the 5th voltage output end 516.Current lead 517 is integrated on the wheatstone bridge configuration, and the current path of current lead 517 is through all the linear thin-film magnetoresistive sensors on the Wheatstone bridge.The two ends of current lead 517 are first current input terminal 511 and second current input terminal 512.
Full-bridge circuit the 5th linear thin-film magnetoresistive sensor first magnetic moment direction 537 of full-bridge circuit the 5th linear thin-film magnetoresistive sensor 521, full-bridge circuit the 5th linear thin-film magnetoresistive sensor first magnetic moment direction 538 of full-bridge circuit the 6th linear thin-film magnetoresistive sensor 522, full-bridge circuit the 7th linear thin-film magnetoresistive sensor first magnetic moment direction 535 of full-bridge circuit the 7th linear thin-film magnetoresistive sensor 523 and full-bridge circuit the 8th linear thin-film magnetoresistive sensor first magnetic moment direction 536 of full-bridge circuit the 8th linear thin-film magnetoresistive sensor 524 are all identical.Full-bridge circuit the 5th linear thin-film magnetoresistive sensor second magnetic moment direction 533 of full-bridge circuit the 5th linear thin-film magnetoresistive sensor 521, full-bridge circuit the 5th linear thin-film magnetoresistive sensor second magnetic moment direction 534 of full-bridge circuit the 6th linear thin-film magnetoresistive sensor 522, full-bridge circuit the 7th linear thin-film magnetoresistive sensor second magnetic moment direction 531 of full-bridge circuit the 7th linear thin-film magnetoresistive sensor 523 and full-bridge circuit the 8th linear thin-film magnetoresistive sensor second magnetic moment direction 532 of full-bridge circuit the 8th linear thin-film magnetoresistive sensor 524 are all identical.
When measured electric current when the current lead 517, produce induced field 518, Wheatstone bridge is according to the size of induced field 518, thereby records the size that flows through current lead 517 electric currents.Wheatstone bridge is encapsulated in the same chip with current lead 517.Current sensor uses occasion closer in adjacent current or that external interference magnetic field is stronger and complicated, the whole sensor chip can be positioned in the square radome.
The non magnetic pinning layer 2 of the utility model forms reference layer with magnetic nailed layer 3, and reference layer has first magnetic moment direction 7; Magnetic free layer 5 has second magnetic direction, 8, the second magnetic direction 8 and has anisotropy perpendicular to face, and the direction of second magnetic moment is vertical mutually with the direction of first magnetic moment.Because second magnetic moment of magnetic free layer 5 has the anisotropy perpendicular to face, magnetic free layer 5 shows extremely low magnetic hysteresis in the direction that is parallel to face, and lower saturation field, makes that forming magnetoresistive transducer has higher sensitivity; The saturation field size that magnetic free layer 5 is parallel to face can have the anisotropic size adjustment perpendicular to face.Utilize thin-film magnetoresistive sensor of the present utility model can also form the band magnetism gathering rings the closed loop current sensor and not with the open-loop current sensor of magnetism gathering rings, magnetic hysteresis is little, precision and linearity height, adjustable linear range, technology is simple, the response frequency height, cost is low, strong interference immunity and good temp characteristic etc.
Claims (6)
1. a linear thin-film magnetoresistive sensor is characterized in that, comprising:
Seed Layer;
Reference layer is positioned on the described Seed Layer, has first magnetic moment;
Non magnetic separation layer is positioned on the described reference layer, and reference layer and magnetic free layer are isolated;
The magnetic free layer is positioned on the non magnetic separation layer, has second magnetic moment, and described second magnetic moment has the anisotropy perpendicular to face, and the direction of second magnetic moment is vertical mutually with the direction of first magnetic moment.
2. linear thin-film magnetoresistive sensor according to claim 1, it is characterized in that: described reference layer comprises non magnetic pinning layer and magnetic nailed layer, and described non magnetic pinning layer is positioned on the Seed Layer, and the magnetic nailed layer is positioned on the non magnetic pinning layer; Non magnetic pinning layer and magnetic nailed layer produce exchange coupling field, and described exchange coupling field has first magnetic moment at the magnetic nailed layer.
3. linear thin-film magnetoresistive sensor circuit that utilizes the described linear thin-film magnetoresistive sensor of claim 1, it is characterized in that: comprise the first linear thin-film magnetoresistive sensor and the second linear thin-film magnetoresistive sensor, the described first linear thin-film magnetoresistive sensor, the second linear thin-film magnetoresistive sensor form half-bridge circuit; The first magnetic moment direction antiparallel of first magnetic moment direction of the first linear thin-film magnetoresistive sensor internal reference layer and the second linear thin-film magnetoresistive sensor internal reference frame; Reverse second magnetic moment direction with the interior magnetic free layer of the second linear thin-film magnetoresistive sensor of second magnetic moment of magnetic free layer is parallel to each other in the first linear thin-film magnetoresistive sensor.
4. linear thin-film magnetoresistive sensor circuit according to claim 3, it is characterized in that: also comprise the 3rd linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor, the described first linear thin-film magnetoresistive sensor, the second linear thin-film magnetoresistive sensor, the 3rd linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor form Wheatstone bridge; Wherein, the described first linear thin-film magnetoresistive sensor, the second linear thin-film magnetoresistive sensor, the 3rd linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor form the brachium pontis of above-mentioned Wheatstone bridge respectively, the first linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor are positioned on two corresponding brachium pontis of Wheatstone bridge, the second linear thin-film magnetoresistive sensor and the 3rd linear thin-film magnetoresistive sensor are positioned on two corresponding brachium pontis of Wheatstone bridge, the brachium pontis adjacency of the Wheatstone bridge at the brachium pontis of the Wheatstone bridge at the first linear thin-film magnetoresistive sensor place and the second linear thin-film magnetoresistive sensor and the 3rd linear thin-film magnetoresistive sensor place;
Second corresponding in the first linear thin-film magnetoresistive sensor, the second linear thin-film magnetoresistive sensor, the 3rd linear thin-film magnetoresistive sensor and the 4th linear thin-film magnetoresistive sensor magnetic moment direction is parallel to each other; First magnetic moment direction in the first linear thin-film magnetoresistive sensor and first magnetic moment direction in the 4th linear thin-film magnetoresistive sensor are parallel to each other, and first magnetic moment direction in the second linear thin-film magnetoresistive sensor parallels with first magnetic moment direction in the 3rd linear thin-film magnetoresistive sensor.
5. closed loop current sensor that utilizes the described linear thin-film magnetoresistive sensor circuit of claim 4, it is characterized in that: comprise magnetism gathering rings, described magnetism gathering rings links to each other with the voltage input end of Wheatstone bridge, and the output terminal of Wheatstone bridge links to each other with amplifier input terminal; Be wound with secondary coil on the magnetism gathering rings, after described secondary coil was wrapped on the magnetism gathering rings, an end of secondary coil linked to each other with the output terminal of amplifier, and the other end is by pull-up resistor ground connection.
6. open-loop current sensor that utilizes the described linear thin-film magnetoresistive sensor circuit of claim 4, it is characterized in that: comprise current lead, described current lead is integrated on the Wheatstone bridge, and the current path of current lead is through the linear thin-film magnetoresistive sensor on the brachium pontis of Wheatstone bridge.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201220291630.5U CN203132562U (en) | 2012-06-20 | 2012-06-20 | Linear thin-film magnetoresistive sensor, linear thin-film magnetoresistive sensor circuit, closed-loop current sensor and open-loop current sensor |
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| CN201220291630.5U CN203132562U (en) | 2012-06-20 | 2012-06-20 | Linear thin-film magnetoresistive sensor, linear thin-film magnetoresistive sensor circuit, closed-loop current sensor and open-loop current sensor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104596551A (en) * | 2013-10-30 | 2015-05-06 | 西门子公司 | Collision Sensor Device for a Medical Apparatus, and Medical Apparatus |
| CN109541280A (en) * | 2018-12-26 | 2019-03-29 | 新纳传感系统有限公司 | Integrated current sensors |
| CN113316725A (en) * | 2019-12-27 | 2021-08-27 | 西部数据技术公司 | Magnetic sensor array with laser annealed single TMR film and characterization thereof |
| CN114705359A (en) * | 2022-04-25 | 2022-07-05 | 国机传感科技有限公司 | Silicon piezoresistive pressure sensor compensation test system and test method |
| CN114764007A (en) * | 2021-01-11 | 2022-07-19 | 大银微系统股份有限公司 | Position sensing mechanism |
-
2012
- 2012-06-20 CN CN201220291630.5U patent/CN203132562U/en not_active Ceased
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104596551A (en) * | 2013-10-30 | 2015-05-06 | 西门子公司 | Collision Sensor Device for a Medical Apparatus, and Medical Apparatus |
| US9737270B2 (en) | 2013-10-30 | 2017-08-22 | Siemens Aktiengesellschaft | Collision sensor device for a medical apparatus, and medical apparatus |
| CN104596551B (en) * | 2013-10-30 | 2017-09-29 | 西门子公司 | Crash sensor device and medical equipment for medical equipment |
| CN109541280A (en) * | 2018-12-26 | 2019-03-29 | 新纳传感系统有限公司 | Integrated current sensors |
| CN113316725A (en) * | 2019-12-27 | 2021-08-27 | 西部数据技术公司 | Magnetic sensor array with laser annealed single TMR film and characterization thereof |
| CN114764007A (en) * | 2021-01-11 | 2022-07-19 | 大银微系统股份有限公司 | Position sensing mechanism |
| CN114764007B (en) * | 2021-01-11 | 2024-05-07 | 大银微系统股份有限公司 | Position sensing mechanism |
| CN114705359A (en) * | 2022-04-25 | 2022-07-05 | 国机传感科技有限公司 | Silicon piezoresistive pressure sensor compensation test system and test method |
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