CN114896929A - Method and system for designing bounded wave electromagnetic pulse simulator - Google Patents
Method and system for designing bounded wave electromagnetic pulse simulator Download PDFInfo
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Abstract
The embodiment of the invention provides a method and a system for designing a bounded wave electromagnetic pulse simulator, belonging to the technical field of electromagnetism. The bounded wave electromagnetic pulse simulator comprises a pulse source, a front transition section, a parallel plate section, a rear transition section and a terminal load along the x-axis direction, and the method comprises the following steps: acquiring an impedance matching value of a terminal load; obtaining structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map; and carrying out simulation construction of the bounded wave electromagnetic pulse simulator based on the structural parameters, and correspondingly outputting a simulation construction scheme. The scheme of the invention realizes the idea of accurately reasoning the structural parameters of the bounded wave electromagnetic pulse simulator based on the user requirements, and realizes the accurate reproduction of the electromagnetic environment in the operation scene of the isolating switch.
Description
Technical Field
The invention relates to the technical field of electromagnetism, in particular to a method and a system for designing a bounded wave electromagnetic pulse simulator.
Background
With the development of power equipment towards intellectualization, on-site miniaturization and miniaturization, the distance between power secondary equipment and power primary equipment such as a transformer and an isolating switch is shortened, the electromagnetic environment of the secondary equipment becomes extremely complex, and higher requirements are provided for the electromagnetic interference resistance of the secondary equipment. According to statistics, secondary equipment damage accidents in the transformer substation caused by the operation of the isolating switch frequently occur, and great loss is caused to national economic construction and life and property safety of people, so that important research value is provided for developing the reproduction of the electromagnetic environment in the operating scene of the isolating switch.
A bounded wave electromagnetic pulse simulator is commonly used for reproducing a transient electric field with a large amplitude, and a typical structure of the bounded wave electromagnetic pulse simulator comprises a pulse source, a front transition section, a parallel plate section (transmission line), a rear transition section and a terminal load. The geometry of the pulse source is usually much smaller than the working space formed by the parallel plate segments, resulting in a tapered front transition section, a rectangular middle parallel plate segment, and a tapered rear transition section connecting the parallel plate segments and the end load. In the structural design process of the simulator, in order to ensure that electromagnetic waves excited by a pulse source are transmitted between each part without reflection and loss, the impedance matching of a terminal load needs to be realized. However, in the actual use process, the duration needs to be based on the test requirements of the user, and the corresponding adaptive bounded wave electromagnetic pulse simulator is designed on the premise of the target impedance matching value, so that the existing method obviously cannot meet the requirements, and a new method for designing the bounded wave electromagnetic pulse simulator is needed on the basis of the problem.
Disclosure of Invention
The invention aims to provide a method and a system for designing a bounded wave electromagnetic pulse simulator, which at least solve the problem that the existing method cannot design the bounded wave electromagnetic pulse simulator based on user requirements.
To achieve the above object, a first aspect of the present invention provides a method for designing a bounded wave electromagnetic pulse simulator, the bounded wave electromagnetic pulse simulator comprising a pulse source, a front transition section, a parallel plate section, a rear transition section and a terminal load along an x-axis direction, the method comprising: acquiring an impedance matching value of a terminal load; obtaining structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map; and carrying out simulation construction of the bounded wave electromagnetic pulse simulator based on the structural parameters, and correspondingly outputting a simulation construction scheme.
Optionally, the structural parameters of the bounded wave electromagnetic pulse simulator include: a first structural parameter α and a second structural parameter β; the first structural parameter alpha is an expansion angle of a front transition section of the bounded wave electromagnetic pulse simulator along the x axial direction; the second structural parameter beta is the expansion angle of the front transition section of the bounded wave electromagnetic pulse simulator along the z-axis direction.
Optionally, the method further includes: constructing a characteristic impedance curve, comprising: within the adjustable range of the impedance matching value, simulating to determine an impedance matching value; based on the impedance matching value, gradually adjusting a second structural parameter beta within a preset adjustable range; every time the adjustment of the second structural parameter beta is completed, calculating to obtain a corresponding first structural parameter alpha based on the impedance matching value and the adjusted second structural parameter beta; and constructing the characteristic impedance curve by using the adjusted second structural parameter beta and the corresponding first structural parameter alpha.
Optionally, the method further includes: constructing a preset characteristic impedance map, comprising the following steps: when a characteristic impedance curve is obtained, adjusting the impedance matching value within the adjustable range of the impedance matching value, and obtaining a corresponding characteristic impedance curve based on the adjusted impedance matching value; repeating the adjustment of the impedance matching value and the acquisition of the characteristic impedance curve until the adjustable range of the impedance matching value is traversed and adjusted, and outputting a plurality of acquired characteristic impedance curves; and obtaining the characteristic impedance map based on all the obtained characteristic impedance curves.
Optionally, each time the adjustment of the second structural parameter β is completed, calculating to obtain a corresponding first structural parameter α based on the impedance matching value and the adjusted second structural parameter β, where the method includes: obtaining an elliptic integral characteristic parameter according to the impedance matching value and the adjusted second structure parameter beta; acquiring a calculation characteristic value of a first structural parameter alpha based on the elliptic integral characteristic parameter; calculating to obtain a corresponding first structural parameter alpha based on the calculated characteristic value of the first structural parameter alpha; the calculation relationship is as follows:
wherein alpha is a first structural parameter alpha; r is a calculated characteristic value of the first structural parameter α.
Optionally, the elliptic integral characteristic parameter includes a characteristic value n and a characteristic value m; the calculation formula of the characteristic value m is as follows:
wherein Z is c Is an impedance matching value; m is 1 1-m is a complementary parameter of m; n is a radical of an alkyl radical 0 Is the eigenwave impedance of free space.
Optionally, the calculation formula of the feature value n is as follows:
wherein sn is a Jacobian elliptic function,
k (m) is the first type of complete elliptic integral.
Optionally, the expression of the first complete elliptic integral is as follows:
wherein the content of the first and second substances,
to calculate an intermediate value; wherein the content of the first and second substances,
is a first type of incomplete elliptic integral, whose expression is:
optionally, the obtaining a calculated feature value of the first structural parameter α based on the elliptic integral feature parameter includes: obtaining a first intermediate characteristic value according to the elliptic integral characteristic parameter based on a calculation formula of the first intermediate characteristic value; calculating to obtain a second intermediate characteristic value according to the first intermediate characteristic value based on a calculation formula of the second intermediate characteristic value; calculating a third intermediate characteristic value according to the second intermediate characteristic value based on a calculation formula of the third intermediate characteristic value; calculating to obtain a calculation characteristic value of the first structural parameter alpha according to the third intermediate characteristic value based on a calculation formula of the calculation characteristic value of the first structural parameter alpha; wherein the first intermediate eigenvalue is calculated by the following formula:
wherein A is a first intermediate characteristic value; the second intermediate eigenvalue is calculated as:
wherein B is a second intermediate characteristic value; the calculation formula of the third intermediate characteristic value is as follows:
wherein G is a third intermediate eigenvalue; the calculation formula of the calculated characteristic value of the first structural parameter alpha is as follows:
wherein the content of the first and second substances,
is the third type of elliptic integral.
Optionally, the expression of the third kind of elliptic integral is:
optionally, the obtaining of the structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and the preset characteristic impedance spectrum includes: according to the impedance matching value, retrieving in a preset characteristic impedance map to obtain a corresponding characteristic impedance curve; based on the principle of saving most materials, finding out a corresponding point of a first structural parameter alpha and a corresponding point of a second structural parameter beta in the characteristic impedance curve obtained by searching; determining a corresponding value of a first structural parameter a and a corresponding value of a second structural parameter β based on the corresponding points; and taking the values of the first structural parameter alpha and the second structural parameter beta as the structural parameters of the bounded wave electromagnetic pulse simulator.
A second aspect of the invention provides a bounded wave electromagnetic pulse simulator design system, the system comprising: the acquisition unit is used for acquiring an impedance matching value of a terminal load; the processing unit is used for obtaining the structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map; and the simulation unit is used for carrying out simulation construction of the bounded wave electromagnetic pulse simulator based on the structural parameters and correspondingly outputting a simulation construction scheme.
Optionally, the processing unit is further configured to: constructing a characteristic impedance curve, comprising: within the adjustable range of the impedance matching value, simulating to determine an impedance matching value; based on the impedance matching value, gradually adjusting a second structural parameter beta within a preset adjustable range; every time the adjustment of the second structural parameter beta is completed, calculating to obtain a corresponding first structural parameter alpha based on the impedance matching value and the adjusted second structural parameter beta; and constructing the characteristic impedance curve by using the adjusted second structural parameter beta and the corresponding first structural parameter alpha.
In another aspect, the present invention provides a computer readable storage medium having stored thereon instructions which, when executed on a computer, cause the computer to perform the method of bounded wave electromagnetic pulse simulator design described above.
According to the technical scheme, on the premise of knowing user requirements, the corresponding bounded wave electromagnetic pulse simulator is designed based on the user requirements, corresponding characteristic impedance map matching is carried out through specific impedance matching values, structural parameters of the bounded wave electromagnetic pulse simulator under the corresponding impedance matching values are found, and a corresponding construction scheme is generated based on the structural parameters. The finally obtained bounded wave electromagnetic pulse simulator meets the use requirements of users, and has significant meaning for accurate reproduction of electromagnetic environment in an isolation switch operation scene.
Additional features and advantages of embodiments of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the embodiments of the invention without limiting the embodiments of the invention. In the drawings:
FIG. 1 is a flow chart of steps of a method for designing a bounded wave electromagnetic pulse simulator in accordance with an embodiment of the present invention;
FIG. 2 is a flowchart of the steps provided by one embodiment of the present invention to generate a characteristic impedance profile;
FIG. 3 is a schematic diagram of a bounded wave electromagnetic pulse simulator in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of the structural parameters of a bounded wave electromagnetic pulse simulator provided in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram of a characteristic impedance profile provided by one embodiment of the present invention;
FIG. 6 is a system block diagram of a bounded wave electromagnetic pulse simulator design system provided in accordance with one embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
With the development of power equipment towards intellectualization, localization and miniaturization, the distance between power secondary equipment and power primary equipment such as a transformer and an isolating switch is shortened, the electromagnetic environment of the secondary equipment becomes very complex, and higher requirements are also put on the electromagnetic interference resistance of the secondary equipment. According to statistics, secondary equipment damage accidents in the transformer substation caused by the operation of the isolating switch frequently occur, and great loss is caused to national economic construction and life and property safety of people, so that important research value is provided for reproducing the electromagnetic environment in the operating scene of the isolating switch.
Referring to fig. 3, a bounded wave electromagnetic pulse simulator is commonly used to reproduce transient electric fields with large amplitudes, and a typical structure of the bounded wave electromagnetic pulse simulator is composed of a pulse source, a front transition section, a parallel plate section (transmission line), a rear transition section and a terminal load. The geometry of the pulse source is usually much smaller than the working space formed by the parallel plate segments, resulting in a tapered front transition section, a rectangular middle parallel plate segment, and a tapered rear transition section connecting the parallel plate segments and the end load. In the structural design process of the simulator, in order to ensure that electromagnetic waves excited by a pulse source are transmitted between each part without reflection and loss, the impedance matching of a terminal load needs to be realized.
The invention provides a method for reversely calculating a first structural parameter alpha and a second structural parameter beta of a simulator under the condition of limiting an impedance matching value, developing a simulator structure design, and forming a two-dimensional impedance matching table with the first structural parameter alpha and the second structural parameter beta as variables to assist an engineer to quickly search the impedance matching value of a terminal load. As shown in fig. 4, the first structural parameter α is an expansion angle of the front transition section of the bounded wave electromagnetic pulse simulator along the x-axis direction; and the second structural parameter beta is the expansion angle of the front transition section phase of the bounded wave electromagnetic pulse simulator along the z-axis direction.
FIG. 6 is a system block diagram of a bounded wave electromagnetic pulse simulator design system provided in accordance with one embodiment of the present invention. As shown in fig. 6, the system includes: the acquisition unit is used for acquiring an impedance matching value of a terminal load; the processing unit is used for obtaining the structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map; and the simulation unit is used for carrying out simulation construction of the bounded wave electromagnetic pulse simulator based on the structural parameters and correspondingly outputting a simulation construction scheme.
Optionally, the processing unit is further configured to: constructing a characteristic impedance curve, comprising: within the adjustable range of the impedance matching value, simulating and determining an impedance matching value; based on the impedance matching value, gradually adjusting a second structural parameter beta within a preset adjustable range; every time the adjustment of the second structural parameter beta is completed, calculating to obtain a corresponding first structural parameter alpha based on the impedance matching value and the adjusted second structural parameter beta; and constructing the characteristic impedance curve by using the adjusted second structural parameter beta and the corresponding first structural parameter alpha.
FIG. 1 is a flow chart of a method for designing a bounded wave electromagnetic pulse simulator in accordance with an embodiment of the present invention. As shown in fig. 1, the method includes:
step S10: and acquiring an impedance matching value of the terminal load to be tested.
Specifically, in the conventional bounded wave electromagnetic pulse simulator, the structural size is designed according to the size of an object to be measured and the field space, and then impedance calculation is performed to obtain the impedance matching value of the terminal load. The design method cannot meet the simulator design with the limiting condition on the impedance matching value. The method aims at the simulator design with special requirements on impedance matching values, and obtains the value of a first structural parameter alpha and the value of a second structural parameter beta of the bounded wave electromagnetic pulse simulator through reverse calculation by knowing the impedance matching values, so as to guide the structural dimension design of the simulator. Therefore, the scheme of the invention is designed for a simulator with special requirements on impedance matching values, so that the specially obtained impedance matching value needs to be obtained first, the required impedance matching value can be the impedance matching value of the simulation equipment, can also be the impedance matching value of a real terminal load, and even can be the impedance matching value required by a user, and as long as the impedance matching value is determined, the applicable bounded wave electromagnetic pulse simulator can be specified based on the known impedance matching value.
Step S20: and obtaining the structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map.
Specifically, as shown in fig. 4, when the bounded wave electromagnetic pulse simulator is constructed, there are two main structural parameters, and the two structural parameters directly concern the working performance of the bounded wave electromagnetic pulse simulator, namely, the first structural parameter α and the second structural parameter β. The first structural parameter alpha is an expansion angle of a front transition section of the bounded wave electromagnetic pulse simulator along the x axial direction; and the second structural parameter beta is the expansion angle of the front transition section phase of the bounded wave electromagnetic pulse simulator along the z-axis direction. The scheme of the invention carries out result parameter reverse reasoning based on the determined impedance matching value, so that a first structural parameter alpha and a second structural parameter beta are obtained by reasoning, and the first structural parameter alpha and the second structural parameter beta which are correspondingly matched under each impedance matching value are determined. In the scheme of the invention, the corresponding curves of the first structural parameter alpha and the second structural parameter beta under corresponding numerical values are found mainly by comparing the determined impedance matching value with a preset characteristic impedance map, and then the optimal construction determination rule is screened out, for example, the corresponding first structural parameter alpha and the second structural parameter beta are determined on the premise of using less materials. The characteristic impedance atlas is a preset rule, and when the characteristic impedance atlas is used subsequently, the corresponding special diagnosis curve can be extracted quickly only by contrasting the preset rule. In order to facilitate the implementation of the scheme, the scheme of the invention firstly needs to make the preset rule, namely, the preset characteristic impedance map is obtained. Specifically, as shown in fig. 2, the method includes the following steps:
step S201: a first characteristic impedance curve is constructed.
Specifically, in the preset characteristic impedance map, a plurality of characteristic impedance curves exist, each characteristic curve is a corresponding relationship between the first structural parameter α and the second structural parameter β under the condition of determining the impedance matching value, so that when the characteristic impedance map is formed, all characteristic impedance curves need to be obtained respectively, and then all characteristic impedance curves are integrated to obtain a corresponding characteristic impedance map. Therefore, based on common use rules, the adjustable range of the impedance matching value is determined, then the impedance matching value is adjusted step by step in the range, and a special diagnosis impedance curve corresponding to the impedance matching value is obtained after each adjustment step.
And determining a first impedance matching value in the adjustable range of the first characteristic impedance matching value, wherein the first impedance matching value is preferably the maximum value or the minimum value of the adjustable range, so that the impedance matching value is adjusted to be smaller or larger step by step subsequently, and omission is avoided. After the first impedance matching value is determined, the second structural parameter beta is adjusted step by step within a preset adjustable range based on the impedance matching value. And calculating to obtain a corresponding first structural parameter alpha based on the impedance matching value and the adjusted second structural parameter beta every time the adjustment of the second structural parameter beta is completed, so as to obtain the corresponding relation between the plurality of second structural parameters beta and the plurality of first structural parameters alpha, and constructing the characteristic impedance curve by using the adjusted second structural parameter beta and the corresponding first structural parameter alpha.
The step of obtaining the corresponding first structural parameter alpha by calculating based on the impedance matching value and the second structural parameter beta adjusted by each stage comprises the following steps: obtaining an elliptic integral characteristic parameter according to the impedance matching value and the adjusted second structure parameter beta; acquiring a calculation characteristic value of a first structural parameter alpha based on the ellipse characteristic parameter; calculating and obtaining a corresponding first structural parameter alpha based on the calculated characteristic value of the first structural parameter alpha; wherein, the calculation relationship is as follows:
wherein alpha is a first structural parameter alpha; r is a calculated characteristic value of the first structural parameter α. The elliptic integral characteristic parameters comprise characteristic values n and m; the calculation formula of the characteristic value m is as follows:
wherein Z is c Is an impedance matching value; m is 1 1-m is a complementary parameter of m; n is 0 Which is the eigenwave impedance of free space and tends to take the value 376.7 omega. The calculation formula of the characteristic value n is as follows:
wherein sn is a Jacobian elliptic function
K (m) is the first type of complete elliptic integral. The first type of complete elliptic integral expression is as follows:
wherein the content of the first and second substances,
to calculate an intermediate value; wherein the content of the first and second substances,
is a first type of incomplete elliptic integral, whose expression is:
specifically, obtaining a first structural parameter α based on the ellipse characteristic parameter to calculate a characteristic value includes: obtaining a first intermediate characteristic value according to the ellipse characteristic parameter based on a calculation formula of the first intermediate characteristic value; calculating to obtain a second intermediate characteristic value according to the first intermediate characteristic value based on a value calculation formula of a second intermediate characteristic; calculating a third intermediate characteristic value according to the second intermediate characteristic value based on a calculation formula of the third intermediate characteristic value; calculating to obtain a calculation characteristic value of the first structural parameter alpha according to the three intermediate characteristic values based on a calculation formula of the calculation characteristic value of the first structural parameter alpha; wherein the first intermediate feature value is calculated as:
wherein A is a first intermediate characteristic value; the second intermediate feature value is calculated as:
wherein B is a second intermediate characteristic value; the third intermediate feature value is calculated as:
wherein G is a third intermediate eigenvalue; the calculation formula of the calculated characteristic value of the first structural parameter α is:
wherein, the first and the second end of the pipe are connected with each other,
is the third kind of elliptic integral, and its expression is:
step S202: and correcting the first impedance matching value within the adjustable range of the impedance matching value, and determining a new characteristic impedance curve based on the corrected impedance matching value.
Specifically, after the first characteristic impedance curve is constructed, the value of the impedance matching value is changed, and on the premise of the new impedance matching value, the step of calculating the correspondence between the second structural parameter β and the first structural parameter α in step S201 is executed again to obtain a new characteristic impedance curve.
Step S203: and finishing the traversal correction of the adjustable range of the impedance matching value to obtain characteristic impedance curves corresponding to all the impedance matching correction values.
Specifically, step S202 is repeated until the adjustable range of the impedance matching value is traversed to obtain the characteristic impedance curve at each adjustment value, for example, 100 characteristic impedance curves may be correspondingly obtained if 100 levels of adjustments are preset.
Step S204: and integrating all the characteristic impedance curves to obtain a characteristic impedance spectrum.
Specifically, as shown in fig. 5, in an embodiment, the first structural parameter α is used as an abscissa, the second structural parameter β is used as an ordinate, and all characteristic impedance curves are integrated into the same two-dimensional coordinate system, where the coordinate system includes a plurality of characteristic impedance curves, each characteristic impedance curve corresponds to a characteristic impedance curve of an impedance matching value, and the integrated two-dimensional coordinate system is used as a characteristic impedance map.
After the characteristic impedance map is completed, matching and searching are performed in the corresponding characteristic impedance map based on the impedance matching value obtained in step S10, and a characteristic impedance curve corresponding to the impedance matching value is found. And extracting a corresponding characteristic impedance curve, wherein the characteristic curve comprises a plurality of corresponding points of the first structural parameter alpha and a plurality of corresponding points of the second structural parameter beta, and theoretically, any one point on the curve can meet the requirements of users. However, for construction economy, the construction materials required for different expansion angles may be different. Therefore, in order to find the most preferable scheme, preferably, after the characteristic impedance curve is extracted, the processing unit performs one-time bounded wave electromagnetic pulse simulator simulation construction based on each characteristic point, and respectively obtains the consumable amount under each construction result, and finally screens out the characteristic point with the minimum consumable amount, and obtains the first structural parameter α and the second structural parameter β corresponding to the characteristic point as the structural parameters of the bounded wave electromagnetic pulse simulator.
Step S30: and carrying out simulation construction of the bounded wave electromagnetic pulse simulator based on the structural parameters, and correspondingly outputting a simulation construction scheme.
Specifically, in order to facilitate the relevant personnel to perform subsequent and rapid construction of the bounded wave electromagnetic pulse simulator based on the output structural parameters, preferably, the processing unit performs simulation construction of the bounded wave electromagnetic pulse simulator based on the determined first structural parameter α and the second structural parameter β, the simulation construction process includes a complete bounded wave electromagnetic pulse simulator construction process, and the simulation unit records the parameters of the construction process in detail, so as to facilitate the relevant personnel to perform subsequent construction as a reference. And after the simulation construction is completed, the simulation unit arranges the simulation process into a construction scheme for output.
In the embodiment of the invention, the scheme is different from the existing method for calculating the corresponding impedance matching value based on the constructed bounded wave electromagnetic pulse simulator, the calculation process has a mature calculation method, and the corresponding impedance matching value can be accurately calculated only by collecting the structural parameters of the constructed bounded wave electromagnetic pulse simulator. The scheme is carried out based on the design requirements of the bounded wave electromagnetic pulse simulator, structural parameters of the bounded wave electromagnetic pulse simulator are unknown in the design stage, only the impedance matching value required by a user is known, the simulation experiment is required to be accurately carried out, the bounded wave electromagnetic pulse simulator needing to be designed and built meets the requirements of the user, namely, the structural parameters of the bounded wave electromagnetic pulse simulator need to be reversely inferred according to the impedance matching value provided by the user, and the bounded wave electromagnetic pulse simulator capable of generating the corresponding impedance matching value is obtained.
Embodiments of the present invention also provide a computer-readable storage medium having stored thereon instructions, which, when executed on a computer, cause the computer to perform the above-described method of designing a bounded wave electromagnetic pulse simulator.
Those skilled in the art will appreciate that all or part of the steps in the method for implementing the above embodiments may be implemented by a program, which is stored in a storage medium and includes several instructions to enable a single chip, a chip, or a processor (processor) to execute all or part of the steps in the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
While the embodiments of the present invention have been described in detail with reference to the accompanying drawings, the embodiments of the present invention are not limited to the details of the above embodiments, and various simple modifications can be made to the technical solution of the embodiments of the present invention within the technical idea of the embodiments of the present invention, and the simple modifications are within the scope of the embodiments of the present invention. It should be noted that the various features described in the foregoing embodiments may be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the embodiments of the present invention will not be described separately for the various possible combinations.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as disclosed in the embodiments of the present invention as long as it does not depart from the spirit of the embodiments of the present invention.
Claims (14)
1. A method of designing a bounded wave electromagnetic pulse simulator comprising a pulse source, a front transition, a parallel plate, a back transition, and a terminal load along an x-axis, the method comprising:
acquiring an impedance matching value of a terminal load;
obtaining structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map;
and carrying out simulation construction of the bounded wave electromagnetic pulse simulator based on the structural parameters, and correspondingly outputting a simulation construction scheme.
2. The method of claim 1, wherein the structural parameters of the bounded wave electromagnetic pulse simulator comprise:
a first structural parameter α and a second structural parameter β;
the first structural parameter alpha is an expansion angle of a front transition section of the bounded wave electromagnetic pulse simulator along the x axial direction;
the second structural parameter beta is the expansion angle of the front transition section of the bounded wave electromagnetic pulse simulator along the z-axis direction.
3. The method of claim 2, further comprising:
constructing a characteristic impedance curve, comprising:
within the adjustable range of the impedance matching value, simulating to determine an impedance matching value;
based on the impedance matching value, gradually adjusting a second structural parameter beta within a preset adjustable range;
every time the adjustment of the second structural parameter beta is completed, calculating to obtain a corresponding first structural parameter alpha based on the impedance matching value and the adjusted second structural parameter beta;
and constructing the characteristic impedance curve by using the adjusted second structural parameter beta and the corresponding first structural parameter alpha.
4. The method of claim 3, further comprising:
constructing a preset characteristic impedance map, which comprises the following steps:
when a characteristic impedance curve is obtained, adjusting the impedance matching value within the adjustable range of the impedance matching value, and obtaining a corresponding characteristic impedance curve based on the adjusted impedance matching value;
repeating the adjustment of the impedance matching value and the acquisition of the characteristic impedance curve until the adjustable range of the impedance matching value is traversed and adjusted, and outputting a plurality of acquired characteristic impedance curves;
and obtaining the characteristic impedance map based on all the obtained characteristic impedance curves.
5. The method of claim 3, wherein each time the adjustment of the second structural parameter β is completed, calculating to obtain the corresponding first structural parameter α based on the impedance matching value and the adjusted second structural parameter β comprises:
obtaining an elliptic integral characteristic parameter according to the impedance matching value and the adjusted second structure parameter beta;
acquiring a calculation characteristic value of a first structural parameter alpha based on the elliptic integral characteristic parameter;
calculating to obtain a corresponding first structural parameter alpha based on the calculated characteristic value of the first structural parameter alpha; the calculation relationship is as follows:
wherein alpha is a first structural parameter alpha;
r is a calculated characteristic value of the first structural parameter α.
6. The method of claim 5, wherein the elliptic integral feature parameter comprises a feature value n and a feature value m;
the calculation formula of the characteristic value m is as follows:
wherein Z is c Is an impedance matching value;
m 1 1-m is a complementary parameter of m;
n 0 is the eigenwave impedance of free space;
K(m 1 ) A first type of complete elliptic integral of m 1;
k (m) is the first type elliptical integral of m.
7. The method according to claim 6, wherein the eigenvalue n is calculated by the formula:
wherein sn is a Jacobian elliptic function,
k (m) is a first type of complete elliptic integral;
8. The method of claim 7, wherein the expression of the first type of complete elliptic integral is:
wherein the content of the first and second substances,
to calculate an intermediate value; theta is an independent variable; wherein the content of the first and second substances,
9. the method according to claim 5, wherein the obtaining a calculated feature value of the first structural parameter α based on the elliptic integral feature parameter comprises:
obtaining a first intermediate characteristic value according to the elliptic integral characteristic parameter based on a calculation formula of the first intermediate characteristic value;
calculating to obtain a second intermediate characteristic value according to the first intermediate characteristic value based on a calculation formula of the second intermediate characteristic value;
calculating a third intermediate characteristic value according to the second intermediate characteristic value based on a calculation formula of the third intermediate characteristic value;
calculating to obtain a calculation characteristic value of the first structural parameter alpha according to the third intermediate characteristic value based on a calculation formula of the calculation characteristic value of the first structural parameter alpha; wherein the content of the first and second substances,
the first intermediate eigenvalue is calculated as:
wherein A is a first intermediate characteristic value;
the second intermediate eigenvalue is calculated as:
wherein B is a second intermediate characteristic value;
the calculation formula of the third intermediate characteristic value is as follows:
wherein G is a third intermediate eigenvalue;
the calculation formula of the calculated characteristic value of the first structural parameter alpha is as follows:
wherein the content of the first and second substances,
is the third type of elliptic integral.
10. The method of claim 9, wherein the expression of the third type of elliptic integral is:
11. the method according to claim 2, wherein obtaining structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching values and a preset characteristic impedance map comprises:
according to the impedance matching value, retrieving in a preset characteristic impedance map to obtain a corresponding characteristic impedance curve;
based on the principle of saving most materials, finding out a corresponding point of a first structural parameter alpha and a corresponding point of a second structural parameter beta in the characteristic impedance curve obtained by searching;
determining a corresponding value of a first structural parameter a and a corresponding value of a second structural parameter β based on the corresponding points;
and taking the values of the first structural parameter alpha and the second structural parameter beta as the structural parameters of the bounded wave electromagnetic pulse simulator.
12. A bounded wave electromagnetic pulse simulator design system, the system comprising:
the acquisition unit is used for acquiring an impedance matching value of a terminal load;
the processing unit is used for obtaining the structural parameters of the bounded wave electromagnetic pulse simulator based on the impedance matching value and a preset characteristic impedance map;
and the simulation unit is used for carrying out simulation construction of the bounded wave electromagnetic pulse simulator based on the structural parameters and correspondingly outputting a simulation construction scheme.
13. The system of claim 12, wherein the processing unit is further configured to:
constructing a characteristic impedance curve, comprising:
within the adjustable range of the impedance matching value, simulating to determine an impedance matching value;
based on the impedance matching value, gradually adjusting a second structural parameter beta within a preset adjustable range;
every time the adjustment of the second structural parameter beta is completed, calculating to obtain a corresponding first structural parameter alpha based on the impedance matching value and the adjusted second structural parameter beta;
and constructing the characteristic impedance curve by using the adjusted second structural parameter beta and the corresponding first structural parameter alpha.
14. A computer readable storage medium having stored thereon instructions which, when executed on a computer, cause the computer to perform the method of designing a bounded wave electromagnetic pulse simulator as defined in any of claims 1 to 11.
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| CN116298653B (en) * | 2023-05-24 | 2023-08-29 | 北京智芯微电子科技有限公司 | Transient electromagnetic interference injection device, transient electromagnetic interference test system and method |
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