CN1144301C - Organic film transistor switch device and making method thereof - Google Patents
Organic film transistor switch device and making method thereof Download PDFInfo
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- CN1144301C CN1144301C CNB021164584A CN02116458A CN1144301C CN 1144301 C CN1144301 C CN 1144301C CN B021164584 A CNB021164584 A CN B021164584A CN 02116458 A CN02116458 A CN 02116458A CN 1144301 C CN1144301 C CN 1144301C
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229930192474 thiophene Natural products 0.000 claims description 3
- 229910004541 SiN Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- -1 fluoro CuPc Chemical compound 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims 1
- 235000017491 Bambusa tulda Nutrition 0.000 claims 1
- 241001330002 Bambuseae Species 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000011425 bamboo Substances 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229920003023 plastic Polymers 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 32
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000012044 organic layer Substances 0.000 abstract description 2
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- 230000004888 barrier function Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The present invention belongs to an organic film transistor switch device and a manufacture method thereof. A source and a drain electrodes of a top electrode conformation device containing a lightproof layer are positioned above an organic semiconductor layer, wherein a grid electrode is arranged on a basal plate; an insulation layer is arranged on the grid electrode and the basal plate; the organic semiconductor layer is arranged on the insulation layer; a low dielectric organic photoresist island is arranged on an organic layer; the source and the drain electrodes are arranged on the insulation layer and the organic semiconductor layer; the lightproof layer is arranged on the photoresist island; a layer of metal is sputtered and sprayed on the basal plate and is photoengraved into the grid electrode; vacuum thermal evaporation organic semiconductor materials are used as a source layer and are photoengraved. The method comprises that the organic film transistor switch device is formed by adopting a dried RIE reactive ion etch method; the photoresist is coated, and the grid electrode is used as a mask mould of which the back obtains exposure by an ultraviolet light source; film is developed, and a layer of metal of vacuum thermal evaporation forms the source and the drain electrodes; moreover, the lightproof layer is simultaneously formed above a channel. The present invention introduces self-alignment technology and separation technology in the manufacture technology of a transistor, so that the overlap area between the grid electrode or the source electrode or the drain electrode of the device is almost zero. Consequently, the parasitic capacity of the grid electrode, the source electrode and the drain electrode of the device is reduced greatly.
Description
Technical field: the present invention relates to a kind of OTFT (hereinafter referred to as OTFT) switching device.
The invention still further relates to a kind of manufacture method of organic film transistor switch device.
Background technology: in recent years, the research Showed Very Brisk of organic semiconducting materials.The performance of OTFT has surpassed the level of amorphous silicon film transistor (a-Si:H TFT).Especially the room temperature carrier mobility of some organic molecule oligomers (as Pentacene, Oligothiophene, Tetracene etc.) has surpassed 1 (the every volt per second of square centimeter) [Y.Y.Lin etal IEEE Electron Device Lett.18,606 (1997), J.H.Schon et alScience 287,1022 (2000), J.H.Schon et al Science 288,2338 (2000)].Yet some chemical corrosion solution of using always in the inorganic semiconductor device fabrication have suitable adverse influence to the character of organic semiconducting materials, meet difficulty so adopt conventional inorganic semiconductor device manufacturing process to process organic semiconductor device.Therefore, limited the application of OTFT.Patent about OTFT manufacture craft aspect rarely has report.Though, the patent No. be US005854139A U.S. Patent Publication with Uniformpoly thiophene and derivative thereof manufacture method as the OTFT of semiconductor layer, but it does not introduce photoetching process, so device size very big (raceway groove is wide to be 1 centimetre, and raceway groove length is 100 microns).And do not consider the photoelectric current of shielding device and reduce the parasitic capacitance of device that these can produce adverse influence to performances of device.
Electric capacity, these can produce adverse influence to the performance of device.
Summary of the invention: one of purpose of the present invention is to provide a kind of organic film transistor switch device, and the grid/source of this device, grid/leakage overlapping area are almost nil, thereby reduces the living electric capacity in the grid/source, grid of device/omit greatly.
Another purpose of the present invention is to provide a kind of manufacture method of organic film transistor switch device, and this method can be simplified production process and improve device performance, forms light shield layer simultaneously.
For achieving the above object, a kind of organic film transistor switch device provided by the invention, structure is:
A kind of its source/drain electrode of top electrode configuration device that contains light shield layer places on the organic semiconductor layer, wherein, grid is on substrate, insulating barrier is on grid and substrate, organic semiconductor layer is on insulating barrier, low dielectric organic photoresist island is on organic layer, and source electrode and drain electrode are on insulating barrier and organic semiconductor layer, and light shield layer is on the photoresist island.
The method of the above-mentioned device of making provided by the invention, key step is as follows:
The first step, sputter or evaporate layer of metal and be photo-etched into gate electrode on substrate;
In second step, sputter or evaporation gate insulating film or spin coating high molecular polymer are as gate insulating film; Dielectric film is Ta
2O
5, Al
2O
3, TiO
2, SiO
2, SiN
xHigh molecular polymer is polymethyl methacrylate, polyimides, polyvinyl alcohol, Kynoar or in them any two kinds;
In the 3rd step, the vacuum thermal evaporation organic semiconducting materials adopts the method moulding of dry method RIE reactive ion etching as active layer and photoetching;
The 4th step, resist coating, with the grid be mask with ultraviolet source from back-exposure;
The 5th step, develop, make the photoresist edge be eaves shape or up big and down small shape;
The 6th step, vacuum thermal evaporation layer of metal Au, Ag, Mo, Al or in them any two kinds, formation source/drain electrode, and above raceway groove, form light shield layer simultaneously;
In the above making step: the 4th step was self-aligned technology, and the 5th step was lift-off technology.
Advantage of the present invention is by using lithography stripping technology making source, drain electrode above organic semiconductor layer, can realizing the top electrode small size device.Thereby the top electrode device helps charge carrier injects the raising that organic semiconductor helps device performance.In addition, by the application of back of the body exposure self-aligned technology, grid/source and grid/omit the influence of living electric capacity have been eliminated in almost vanishing greatly thereby grid/the source of device and grid/leakage overlap, and have improved transistorized operating rate.Light shield layer has been eliminated the influence of photoelectric current to the transistor switch ratio simultaneously.
This method can be widely used in aspects such as low cost integrated circuit and Active Matrix LCD At.
Description of drawings:
Fig. 1 a-Fig. 1 f is a manufacture craft flow chart of the present invention.
Embodiment
Embodiment
On 7059 glass substrate or flexible plastic substrate 1, plate layer of metal Ta film with radio frequency magnetron sputtering method, thickness 200 nanometers, and be photo-etched into gate shapes 2; On grid, use dc magnetron sputtering method reactive sputtering one deck Ta
2O
5As gate insulation layer 3, thickness 100 nanometers; Adopt the molecular vapor deposition method to prepare organic semiconductor layer then, about 40 nanometers of thickness, and become island 4 with the RIE dry etching through photoetching; Then be coated with one deck photoresist 5 again, 1 micron of thickness develops behind the grid back-exposure, makes the photoresist layer cross section become eaves shape and up big and down small shape; At last, the Au layer of vacuum evaporation one deck 100 nanometers, Au layer separately form source electrode 6 and drain electrode 7 naturally in the photoresist both sides, form light shield layer 8 simultaneously at the raceway groove top.
Claims (6)
1, a kind of organic film transistor switch device is characterized in that, transistor arrangement is that source/drain electrode places the top electrode structure on the organic semiconductor layer, the light shield layer that and contains in the preparation source/form simultaneously during drain electrode.
2, a kind of manufacture method of organic film transistor switch device, its key step is:
The first step, sputter or evaporate layer of metal and be photo-etched into gate electrode on glass or plastic base;
In second step, sputter or evaporation gate insulating film or spin coating high molecular polymer are as gate insulating film; Dielectric film is Ta
2O
5, Al
2O
3, TiO
2, high molecular polymer is polymethyl methacrylate, polyimides, polyvinyl alcohol or Kynoar;
In the 3rd step, the vacuum thermal evaporation organic semiconducting materials is as active layer, with photoetching and dry etching moulding;
The 4th step, the spin coating photoresist, with the grid be mask with ultraviolet source from back-exposure;
The 5th step, develop, make the photoresist edge be eaves shape or up big and down small shape;
In the 6th step, vacuum thermal evaporation layer of metal Au, Ag, Mo or Al form source/drain electrode, and form light shield layer above raceway groove simultaneously.
3, organic crystal tube device as claimed in claim 1 is characterized in that, gate insulating film is Ta
2O
5, Al
2O
3, TiO
2, SiO
2, SiN
x, polymethyl methacrylate, polyimides, polyvinyl alcohol, Kynoar or in them any two kinds, source/leak electricity is Au, Ag, Mo, Al or in them any two kinds very;
4, organic crystal tube device as claimed in claim 1 is characterized in that, organic semiconducting materials is CuPc, phthalein mountain valley with clumps of trees and bamboo nickel, Phthalocyanine Zinc, fluoro CuPc, fluoro phthalocyanine chromium, pentacene, five thiophene or six thiophene.
5, manufacture method as claimed in claim 2, it is characterized in that, introduce self-aligned technology and lift-off technology in the manufacturing process of organic transistor, make the grid/source of device, grid/leakage overlapping area almost nil, thereby reduce the living electric capacity in the grid/source, grid of device/omit greatly.
6, manufacture method as claimed in claim 2 is characterized in that, when making source, drain electrode, the light shield layer at raceway groove top forms synchronously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021164584A CN1144301C (en) | 2002-04-05 | 2002-04-05 | Organic film transistor switch device and making method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021164584A CN1144301C (en) | 2002-04-05 | 2002-04-05 | Organic film transistor switch device and making method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1372336A CN1372336A (en) | 2002-10-02 |
| CN1144301C true CN1144301C (en) | 2004-03-31 |
Family
ID=4744117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021164584A Expired - Lifetime CN1144301C (en) | 2002-04-05 | 2002-04-05 | Organic film transistor switch device and making method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1144301C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646791A (en) * | 2011-05-13 | 2012-08-22 | 京东方科技集团股份有限公司 | OTFT (organic thin film transistor) device and manufacturing method thereof |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100428521C (en) * | 2003-11-17 | 2008-10-22 | 富士施乐株式会社 | Organic semiconductor transistor element |
| JP4431081B2 (en) | 2004-08-30 | 2010-03-10 | エルジー ディスプレイ カンパニー リミテッド | Method for manufacturing organic thin film transistor and method for manufacturing liquid crystal display element |
| KR100675639B1 (en) * | 2004-08-30 | 2007-02-02 | 엘지.필립스 엘시디 주식회사 | Fabrication method of organic thin film transistor and liquid crystal display device |
| KR100787438B1 (en) * | 2005-12-12 | 2007-12-26 | 삼성에스디아이 주식회사 | Organic thin film transistor, method of manufacuring the same, and organic light emitting display apparatus comprising the same |
| KR20070063300A (en) * | 2005-12-14 | 2007-06-19 | 삼성전자주식회사 | Organic thin film transistor array panel and method for manufacturing the same |
| JP2009130180A (en) * | 2007-11-26 | 2009-06-11 | Sony Corp | Method of manufacturing electronic apparatus and electronic apparatus |
| JP5380831B2 (en) * | 2007-12-07 | 2014-01-08 | 株式会社リコー | Organic transistor and manufacturing method thereof |
| JP5429454B2 (en) * | 2009-04-17 | 2014-02-26 | ソニー株式会社 | Thin film transistor manufacturing method and thin film transistor |
| CN102208534B (en) * | 2011-05-27 | 2013-04-17 | 福州大学 | Three-terminal full-control-type switch element based on resistance-variation material and preparation method thereof |
| CN102856395B (en) * | 2011-06-30 | 2014-12-10 | 清华大学 | Pressure-control thin film transistor and application thereof |
| CN103236442B (en) * | 2013-04-23 | 2016-12-28 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) and manufacture method, array base palte, electronic installation |
| CN104617042B (en) * | 2015-02-09 | 2018-01-19 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof |
| CN108335985B (en) | 2017-01-20 | 2020-07-28 | 中国科学院物理研究所 | Preparation method of full-transparent thin film transistor |
-
2002
- 2002-04-05 CN CNB021164584A patent/CN1144301C/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646791A (en) * | 2011-05-13 | 2012-08-22 | 京东方科技集团股份有限公司 | OTFT (organic thin film transistor) device and manufacturing method thereof |
| CN102646791B (en) * | 2011-05-13 | 2015-06-10 | 京东方科技集团股份有限公司 | OTFT (organic thin film transistor) device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1372336A (en) | 2002-10-02 |
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Effective date of registration: 20180731 Address after: 130000 Chuanyu Jingyue Development Zone, Changchun City, Jilin Province Patentee after: Changchun Fulebo Display Technology Co., Ltd. Address before: 130022 No. 159 Renmin Street, Jilin, Changchun Patentee before: Changchun Institue of Applied Chemistry, Chinese Academy of Sciences |
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Granted publication date: 20040331 |
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