CN114284313B - Organic fiber-based carbon nanotube field effect transistor array and preparation method thereof - Google Patents
Organic fiber-based carbon nanotube field effect transistor array and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an organic fiber-based carbon nanotube field effect transistor array and a preparation method thereof, and belongs to the technical field of field effect transistors. The organic fiber-based carbon nanotube field effect transistor array includes: a conductive organic fiber; the ion colloid layer covers the surface of the conductive organic fiber; the semiconductor carbon nano tube layer covers the surface of the ion colloid layer; the metal electrode layer covers the surface of the carbon nano tube layer and comprises at least two metal electrodes, and the adjacent metal electrodes are mutually spaced to form a field effect transistor channel; the one-dimensional nano material conducting layer covers the surface of the metal electrode. The invention continuously prepares the carbon nano tube field effect transistor on the conductive organic fiber, has extremely high efficiency and consistency and extremely low cost; the carbon nanotube device of the organic fiber matrix has excellent bending resistance and elongation resistance, high compatibility with textile technology and wide application scene.
Description
Technical Field
The invention belongs to the technical field of field effect transistors, and particularly relates to a carbon nano tube field effect transistor array constructed by taking organic fibers as a matrix and a preparation method thereof.
Background
The surface functionalization of the continuous conductive fiber is the basis of intelligent materials, and the organic fiber which can be used for various weaving processes is endowed with the characteristics of the electronic device, so that a material with practical significance can be provided for the integration of a wide material and the electronic device. Various conductive fibers with good conductivity and excellent mechanical properties have been prepared by various methods for a long time, and the fiber materials are used in various fields from electromagnetic shielding to wearable electronic textile products. With the continuous development of medical sensing technology and consumer electronics, and the continuous improvement of intelligent electromagnetic protection stealth technical requirements of national defense and military products, electronic devices and circuits based on organic fiber fabrics have wide technical introduction.
Semiconductor carbon nanotubes are considered as the building foundation of semiconductor integrated circuits because of their advantages of extremely small size, high chemical stability, high temperature stability, high mechanical strength, and the like; are also used for a variety of chemical or biological sensing due to their specific surface chemistry; carbon nanotubes are also used to fabricate a variety of flexible electronics devices due to their extremely low flexural modulus and ultra-high mechanical strength to resist bending. In the prior art, carbon nanotubes are covered on the surface of metal fibers to form a field effect transistor array, and the result shows that the voltage applied on the metal can effectively regulate the source-drain transconductance, and the field effect transistor formed by the narrow-channel carbon nanotubes also presents extremely high on-off ratio in the microwave frequency band (10 8 ) And higher on-state current density, so that the carbon nano tube is combined with flexible organic fibers to form a unit for constructing a circuit or to form a macroscopic textile material with adjustable voltage-controlled surface conductivity, and the device can provide basic materials and devices for flexible wearable electronic fabrics, intelligent clothing and self-adaptive stealth textiles.
Disclosure of Invention
The invention aims to provide a carbon nano tube field effect transistor array which is continuously prepared on the surface of a conductive organic fiber filament with the diameter of tens of micrometers and a manufacturing method thereof, and provides a basic element for preparing a fiber-based circuit.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
an organic fiber-based carbon nanotube field effect transistor array, comprising:
a conductive organic fiber;
the ion colloid layer covers the surface of the conductive organic fiber;
the semiconductor carbon nano tube layer covers the surface of the ion colloid layer;
the metal electrode layer covers the surface of the semiconductor carbon nano tube layer and comprises at least two metal electrodes, and the adjacent metal electrodes are mutually spaced to form a field effect transistor channel;
a one-dimensional nano material conducting layer which covers the surface of the metal electrode;
the conductive organic fiber is an organic fiber filament with a surface covered with a conductive layer, and the specific resistance of the conductive organic fiber is not lower than 1000 ohm/cm.
Further, the organic fiber filament is nylon, terylene, polypropylene or polyimide filament, and the cross section is round or flat.
Further, the ionic colloid layer is made of polymer slurry containing imidazole ionic liquid, the thickness is 1-2 micrometers, and the surface flatness is not more than 10 nanometers.
Further, the channel width of the field effect transistor is 200 nm to 5 μm.
Further, the average length of the carbon nanotubes of the carbon nanotube layer is 2 to 5 micrometers, the axial direction of the carbon nanotubes and the axial angle distribution of the conductive fibers are 70 percent less than +/-45 degrees, and the density of the carbon nanotubes is 5 to 30 carbon nanotubes/micrometer 2 。
Further, the one-dimensional nano material conductive layer comprises a silver nanowire layer, a conductive adhesive layer and a single-walled carbon nanotube layer, and the total thickness of the one-dimensional nano material conductive layer is 1-2 microns.
The preparation method of the field effect transistor array comprises the following steps:
step 1, coating polymer slurry containing ionic liquid on the surface of conductive organic fiber to form an ionic colloid layer;
step 2, coating a solution containing semiconductor single-wall carbon nanotubes on the surface of the ionic colloid layer in the step 1 to form a semiconductor carbon nanotube layer;
step 3, coating a micrometer or submicron-width partition adhesive on the surface of the carbon nanotube layer in the step 2, and then depositing a metal electrode layer;
step 4, coating a millimeter-width partition adhesive on the surface of the partition adhesive in the step 3, and then coating a one-dimensional nano material on the surface of the metal electrode layer to form a one-dimensional nano material conducting layer;
and 5, dissolving the isolation glue in the step 3 and the step 4 by adopting a solvent, stripping the metal film and the one-dimensional nano material covered on the glue layer to form a source electrode and an electrode, and taking the conductive fiber core layer as a grid electrode to obtain the field effect transistor array.
Further, in the step 1, the content of the imidazole ionic liquid is 15-25 wt% of the polymer; the polymer is aqueous polyacrylic resin or a mixture of aqueous polyacrylic acid and polyurethane.
The application of the organic fiber-based carbon nanotube field effect transistor array in preparing a fiber-based circuit.
The continuous fiber matrix carbon nanotube field effect transistor array and the manufacturing method thereof have the following beneficial effects: the carbon nano tube field effect transistor is continuously prepared on the conductive organic fiber, has extremely high efficiency and consistency, and adopts a macro material preparation technology to prepare the semiconductor device, so that the cost is extremely low; the carbon nanotube device of the organic fiber matrix has excellent bending resistance and elongation resistance, high compatibility with textile technology, suitability for constructing a textile circuit by using a braiding technology, and wide application prospect, and can be used for driving, signal amplification, signal transmission, control and the like of products such as intelligent clothing electronic or photoelectronic sensing, display and the like, and also can be used for constructing a controllable surface microwave waveguide textile, and can be used for intelligent electromagnetic shielding.
Drawings
Fig. 1 is a schematic structural diagram of an organic fiber-based carbon nanotube field effect transistor array according to the present invention.
Fig. 2 is a flow chart of the preparation of the organic fiber-based carbon nanotube field effect transistor array of the present invention.
FIG. 3 is a schematic illustration of a fiber passing vertically through a carbon nanotube solution in accordance with the present invention.
Fig. 4 is a single channel optical microscope photograph.
Fig. 5 is a scanning electron microscope photograph of a carbon nanotube distribution within a single channel.
Structural unit reference numerals illustrate:
101. organic fiber filaments
102. Organic fiber surface conductive layer
103. Ion colloid layer
104. Semiconductor carbon nanotube layer
105. First partition adhesive layer mask
106. Source and drain electrodes
107. Second partition adhesive layer mask
108. A one-dimensional nanomaterial conductive layer.
Detailed Description
The performance of the carbon nanotube transistor is closely related to the channel width, electrode materials and carrier mobility of the semiconductor carbon nanotube, in order to design transistors with different performances, the invention prepares fiber transistors with the channel width of hundreds of nanometers to several micrometers by adopting a non-photoetching technology, an electrofluidic ink-jet printing technology is suitable for preparing micrometer-sized polymer patterns on complex surfaces, a near-field electrospinning printing technology can coat nanometer-sized polymer fibers on a substrate, micrometer-sized annular polymer patterns or submicron-sized annular polymer patterns can be continuously prepared on the surfaces of monofilaments with high efficiency according to the design requirements of devices, and a submicron mask can be prepared on the surfaces of the fibers by selecting water-soluble polymers. And dissolving the water-soluble mask to obtain the channel of the field effect transistor.
As shown in fig. 1, the present invention provides a carbon nanotube field effect transistor array on a conductive organic fiber, comprising:
as the conductive organic fiber of the grid electrode, organic fiber filaments with conductive layers attached to the surfaces are selected, wherein the conductive organic fiber is a round section fiber with the diameter of 30-70 micrometers or a flat fiber with the width of 40-100 micrometers, and the specific resistance is 100-1000 ohm/cm;
the organic fiber filament is nylon, terylene, polypropylene or polyimide filament produced by a continuous spinning method, the section of the organic fiber filament can be round or flat, and the surface of the organic fiber filament is covered with a conductive layer by a deposition method or a coating method.
The ionic colloid layer is made of insulating polymer slurry doped with imidazole ionic liquid, the thickness is 1-2 microns, and the surface flatness is not more than 10 nanometers.
The semiconductor carbon nano tube layer is formed by paving semiconductor single-wall carbon nano tubes on the surface of the ion colloid layer, the average length of the carbon nano tubes is 2-5 microns, 70% of the distribution of the axis direction of the carbon nano tubes and the axis angle of the fibers is less than +/-45 degrees, and the density of the carbon nano tubes is 5-30 carbon nano tubes/micronRice 2 The preferential orientation of the carbon nanotubes is achieved by vertical liquid bath pulling of the fibers.
And the metal electrode is covered on the surface of the semiconductor carbon nano tube layer, and a field effect transistor channel is formed at a programmable interval, and the channel width is 200 nanometers to 5 micrometers.
And the one-dimensional nano material conducting layer is covered on the surface of the metal electrode, and the thickness of the conducting layer is 1-2 microns. The one-dimensional nano material conducting layer forms good contact with the metal electrode, and the specific resistance of the whole conducting layer is lower than 50 ohm/cm.
As shown in fig. 2, the invention also provides a preparation method of the carbon nanotube field effect transistor array, which uses continuous conductive organic fibers as a core layer, and firstly, continuously coats ionic colloid medium on the surface of the fibers in a liquid phase; then, forming a semiconductor carbon nano tube layer which is arranged in an oriented way on the surface of the fiber by continuously coating p-type or n-type semiconductor single-wall carbon nano tubes through a liquid phase; coating a partition adhesive with a micrometer or submicron width on the surface of the fiber by an ink-jet printing method according to a designed interval, and depositing a metal layer on the surface of the fiber by a plasma sputtering method; and then coating a partition adhesive with millimeter width on the partition adhesive position by using an ink-jet printing method, continuously coating carbon nano tubes and silver nano wires on the fiber surface after curing, finally dissolving the partition adhesive by using a solvent, stripping a metal film covered on the partition adhesive, the carbon nano tubes and the silver nano wires to form a source electrode and a drain electrode with a designable channel length, and using a core layer as a grid electrode, wherein the source electrode and the drain electrode draw signals through conductive fibers to form a continuous field effect tube array.
Specifically:
the conductive organic fiber is prepared by covering a conductive layer on the surface of the organic fiber by adopting a deposition method or a coating method, and the organic fiber is prepared from nylon, terylene, polypropylene and polyimide filaments produced by adopting a continuous spinning method. An organic fiber monofilament having a certain conductivity is selected as a substrate having a certain strength and high flexibility such that the array of transistors covered on the monofilament has tensile and bending strain resistance.
The continuous liquid phase coating of the ionic colloid medium on the surface of the fiber means that the fiber filament continuously passes through a plurality of liquid tanks, slurry in the liquid tanks is uniformly coated on the surface of the fiber filament through dynamic wetting, the speed of the fiber filament passing through the liquid tanks is 5-20 mm/s, a plurality of liquid tanks are arranged, and the fiber filament is dried and solidified by hot air through a heating chamber device after passing through each liquid tank to form an ionic colloid layer. The polymer ion colloid is used as a gate dielectric layer, the material has high ductility and high capacitance, and imidazole ion liquid is adopted to dope the water-based polymer, so that effective field effect modulation on a channel semiconductor is achieved.
The liquid phase continuous coating of the p-type or n-type semiconductor single-wall carbon nano tube means that fiber filaments continuously pass through a carbon nano tube liquid pool, a solution in the liquid pool is toluene solution of the monodisperse carbon nano tube, the content of the carbon nano tube is 1mg/mL, the fiber passing through the liquid pool is 5-20 mm/s, the fiber passes through the liquid pool and is dried by hot air by adopting a heating chamber device to rapidly solidify the carbon nano tube, and the fiber passes through the liquid pool repeatedly for a plurality of times, so that the density of the carbon nano tube on the surface of the obtained fiber is 5-30 carbon nano tubes per square micron.
Alternatively, micron-length semiconductor carbon nanotubes are used or are chemically doped to improve p-type or n-type carrier mobility, so that the transistor output characteristics can be designed within a certain range.
Meanwhile, the fiber coated with the semiconductor carbon nanotube may be subjected to a low-temperature heat treatment or a low-temperature plasma treatment to remove impurities from the surface of the carbon nanotube.
Optionally, the chemical doping is to continuously introduce the fiber into a chemical doping groove after coating the ion colloid and the semiconductor carbon nano tube on the organic fiber filament coated with the conductive material on the surface, and make the fiber pass through the chemical doping groove in a reciprocating way, and keep the hole or electron mobility enhancement effect on the semiconductor carbon nano tube for a certain time.
The method for coating the isolating glue with the width of micrometers or submicron by an ink-jet printing method is to form an isolating glue layer mask on the surface of the fiber by an electrofluidic micro-ink-jet printing method or a near-field electrospinning nanofiber printing method, wherein the thickness of the mask is 200 nanometers to 5 micrometers, and the glue material is a water-soluble polymer. Specifically: for the fiber with the circular section, adopting an electrofluidic micro-ink-jet printing method, arranging one or two nozzles at 180 degrees relative to each other, so that an annular partition adhesive layer mask with a periodic interval, a width of 5-20 micrometers and a thickness of 1-5 micrometers is formed on the surface of the fiber after curing; and (3) for the flat section fiber, adopting a near-field electrospinning nanofiber printing mode to coat the electrospun fiber with the diameter of 200-1000 nanometers in the direction perpendicular to the axis of the flat fiber, so as to form a partition adhesive layer mask with the period interval, the width of 200-1000 nanometers and the thickness of 200-1000 nanometers.
The deposition of the metal layer on the surface of the fiber by the plasma sputtering method means single-sided or double-sided magnetron sputtering, after the continuous fiber is printed by ink jet to form a partition glue mask, the monofilament repeatedly passes through a sputtering area, so that the metal layer is completely sputtered on the surface of the round fiber, the flat fiber covers the surface of the partition glue layer, the metal layer is sputtered on the surface of the partition glue layer, the metal is silver, titanium, chromium or palladium, and the thickness of the metal layer is 0.1-0.2 microns.
Alternatively, the metal layer may be a single layer or multiple layers.
Alternatively, after preparing a micrometer or submicron width partition adhesive mask by a microprinting method, continuously introducing the mask into a plasma sputtering chamber, wherein the sputtering chamber adopts a multi-target structure, the fiber is dragged back and forth in the target chamber, after depositing metal I in the target chamber, introducing the mask into a target chamber II, and after depositing metal II, discharging the sputtering chamber.
And coating millimeter-scale glue drops on the micrometer-scale glue ring by using an inkjet glue coating method, wherein the length is 0.2 to 2 millimeters, and the thickness is 10 to 30 micrometers.
The method comprises the steps of coating a millimeter-width isolating glue layer, then continuously coating a carbon nano tube and a silver nano wire on the surface of a fiber, namely coating a silver nano wire, a conductive adhesive glue layer and a single-wall carbon nano tube with the thickness of tens of nanometers on the surface of the fiber by a liquid phase coating method, firstly coating a silver nano wire layer, then coating a carbon nano tube layer, coating the outer layer with a water-washed conductive polyacrylic resin layer cladding layer, and the total thickness of the conductive layer is 1-2 micrometers, introducing hot water into the continuous fiber after solidification, dissolving the isolating glue, drying by hot air, and winding to form the continuous fiber of the carbon nano tube field effect transistor array.
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 5. It should be noted that the illustration provided in the present embodiment is only to illustrate the basic concept of the present invention by way of illustration, and the structural parameters of each unit may be arbitrarily changed within a certain range according to the device design in actual implementation, and the layout may be more complex.
Example 1
The invention provides a carbon nanotube field effect transistor array, comprising: the organic fiber comprises an organic fiber matrix, an organic fiber surface conducting layer, an ion colloid layer, a semiconductor carbon nano tube layer, a source electrode, a drain electrode and a one-dimensional nano material conducting layer.
(1) Nylon filaments produced by a continuous spinning method with the specification of 20D1F to 70D1F are coated with a layer of conductive material such as silver nanowires, carbon nanotubes and the like on the surface to form a conductive layer with specific resistance not lower than 1000 ohm/cm, and the conductive organic fibers are used as grids of the carbon nanotube field effect transistor;
(2) Coating an ionic colloid medium on the surface of the conductive organic fiber by adopting a liquid phase continuous coating method, wherein the ionic colloid medium is aqueous polyacrylic acid slurry doped with 1-butyl-3-methylimidazole bistrifluoromethanesulfonimide salt, polyacrylic acid resin is Gloss acrylic acid aqueous paint of Spanish Vallejo company, the concentration of the ionic liquid is 15-25wt% of that of a polymer, the coating thickness of an ionic colloid layer is 1-2 micrometers, and the surface flatness after coating is lower than 10 nanometers; the speed of the fiber passing through the liquid tanks is 5-20 mm/s, a plurality of liquid tanks are arranged, and the fiber passes through each liquid tank and then passes through the heating chamber to be dried and solidified by hot air so as to form an ionic colloid layer;
(3) Continuously coating p-type or n-type semiconductor carbon nanotubes with the average length of 2-5 micrometers on the surface of an ion colloid layer through a liquid phase, wherein a carbon nanotube solution is single-wall semiconductor carbon nanotube dispersion liquid which is dissolved in toluene by NanoIntigris corporation, the concentration is 0.01 mg/ml, the liquid phase coating adopts fibers to pass through a conical gun head containing liquid, the aperture of the tip is 0.2-0.5 mm, the gun head is vertical, the tip is 5 mm away from the liquid level of the liquid pond, the fibers are pulled by a guide wheel to vertically pass through the gun head for lifting (shown in figure 3), so as to form directionally arranged carbon nanotubes, the density of the carbon nanotubes is 5-30 carbon nanotubes per square micrometer, the 70% of the distribution part of the axis direction of the carbon nanotubes and the axis of the fibers is lower than +/-45 DEG, the fiber passing speed of the liquid pond is 5-20 mm/s, a plurality of liquid ponds are arranged, and the fibers pass through a heating chamber after passing through each liquid pond and are dried by hot air to form the carbon nanotube layer;
(4) Spraying a water-soluble polymer sizing material on the surface of the carbon nano tube layer by adopting an electrofluidic micro-inkjet printing method, wherein a spray head is arranged at one or two positions which are 180 degrees opposite to each other, so that an annular partition glue layer mask of an annular glue layer with a periodic interval, a width of 5-20 micrometers and a thickness of 1-5 micrometers is formed on the surface of the fiber after solidification;
(5) After the fiber passes through the ink-jet printing step, the monofilament repeatedly passes through a sputtering area by adopting a plasma magnetron sputtering method, so that a layer of metal is completely sputtered on the surface of the fiber, the metal is silver, and a metal electrode covers the surface of the carbon nano tube layer;
(6) Coating a second layer of isolating glue layer mask with the width of 0.2-2 mm and the thickness of 10-30 micrometers on the first isolating glue layer mask by using an ink-jet printing method;
(7) After a second isolating adhesive layer mask with millimeter width is coated, a single-layer silver nanowire, a conductive adhesive layer and a single-wall carbon nanotube with the thickness of tens of nanometers are coated on the surface of the fiber by a liquid phase coating method, a layer of silver nanowire is coated firstly, a layer of carbon nanotube is coated secondly, the outer layer is covered by a water-washed conductive polyacrylic resin layer, the total thickness of the conductive layer is 1-2 microns, the surface of the metal layer is covered, the one-dimensional nano material conductive layer and a metal groove electrode form good contact, the specific resistance of the whole conductive layer is lower than 50 ohm/cm, continuous fibers are led into hot water after solidification, the isolating adhesive layer masks of (4) and (6) are dissolved, and the fiber is rolled after drying, so that the conductive layers on the surface of the fiber which is segmented by the polymer are separated to form source-drain electrodes, and the source-drain electrodes and the grid electrode of the conductive fiber of the core layer form continuous fibers of the carbon nanotube field effect transistor array.
The optical microscope photograph of the structure of the metal electrode and the channel is shown in fig. 4, so that the method can be used for continuously preparing a micron-sized mask on the surface of the fiber monofilament, and the field effect transistor channel can be formed after the micron-sized mask is dissolved by using the water-based polymer; the scanning electron microscope photograph of the distribution of the carbon nano tubes in the channel is shown in figure 5.
Example two
(1) Nylon, terylene and polypropylene flat filaments produced by a melt spinning method, wherein the specification of the organic fibers is between 10D1F and 35D1F, a silver layer is deposited on the surface by an electroplating method, the thickness of the silver layer is 0.1 micron, a conductive layer with specific resistance not lower than 100 ohm/cm is formed, and the conductive organic fibers are used as grids of the carbon nano tube field effect transistor;
step (2) (3) is the same as in example one;
(4) Continuously forming electrospun fibers with the diameters of 200-1000 nanometers by adopting a near-field electrospinning device, spraying the electrospun fibers to a high-voltage electrode in the direction perpendicular to the axis of the flat fibers, and crossing the fibers to form a partition adhesive layer mask with the period interval, the width of 200-1000 nanometers and the thickness of 200-1000 nanometers;
(5) After the fiber passes through the ink-jet printing step, the filament repeatedly passes through a sputtering area by adopting a plasma magnetron sputtering method, so that two layers of metals, namely titanium and silver, are sputtered on the surface of the fiber, and a metal electrode covers the surface of the carbon nano tube layer;
steps (6) and (7) are the same as in the first embodiment.
Example III
Steps (1), (2) and (3) are the same as in example one;
(4) Continuously introducing the fiber with the surface paved with the semiconductor carbon nano tube into a chemical doping liquid pool, wherein the liquid pool contains lithium bistrifluoromethane sulfonyl imide (AgTFSI) or potassium hydroxide/benzo-18-crown 6-ether (KOH/CE) methanol solution (1-10 mM), carrying out n-type or p-type doping on the carbon tube, carrying out hot air drying, repeating the process for a plurality of times to achieve effective chemical doping on the carbon nano tube, and winding the continuous fiber after the continuous fiber passes through a hot box and is kept at 150 ℃ for 30 minutes by dry nitrogen;
(5) Step 4, the same as the embodiment;
(6) Step 5, same as the example;
(7) Step 6, the same as the embodiment;
(8) Step 7 is the same as in the embodiment.
Claims (10)
1. An organic fiber-based carbon nanotube field effect transistor array, characterized in that: comprising the following steps:
a conductive organic fiber;
the ion colloid layer covers the surface of the conductive organic fiber;
the semiconductor carbon nano tube layer covers the surface of the ion colloid layer;
the metal electrode layer covers the surface of the semiconductor carbon nano tube layer and comprises at least two metal electrodes, and the adjacent metal electrodes are mutually spaced to form a field effect transistor channel;
a one-dimensional nano material conducting layer which covers the surface of the metal electrode;
the conductive organic fiber is an organic fiber filament with a surface covered with a conductive layer, the specific resistance is not lower than 1000 ohm/cm, and the organic fiber filament is a nylon, terylene, polypropylene or polyimide filament;
the ionic colloid layer is made of polymer slurry containing imidazole ionic liquid, and the thickness of the ionic colloid layer is 1-2 microns.
2. The array of organic fiber based carbon nanotube field effect transistors of claim 1, wherein: the section of the organic fiber filament is round or flat.
3. The array of organic fiber based carbon nanotube field effect transistors of claim 1, wherein: the surface flatness of the ionic colloid layer is not more than 10 nanometers.
4. The array of organic fiber based carbon nanotube field effect transistors of claim 1, wherein: average length of carbon nanotubes of the semiconducting carbon nanotube layerThe density of the carbon nano tube is between 5 and 30 carbon nano tubes/micron and is between 2 and 5 microns 2 。
5. The array of organic fiber based carbon nanotube field effect transistors of claim 1, wherein: the channel width of the field effect transistor is 200 nanometers to 5 micrometers.
6. The array of organic fiber based carbon nanotube field effect transistors of claim 1, wherein: the one-dimensional nano material conductive layer comprises a silver nanowire layer, a carbon nanotube layer and a conductive adhesive layer, and the total thickness is 1-2 microns.
7. A method for preparing the organic fiber-based carbon nanotube field effect transistor array according to any one of claims 1 to 6, wherein: the method comprises the following steps:
step 1, coating polymer slurry containing ionic liquid on the surface of conductive organic fiber to form an ionic colloid layer;
step 2, coating a solution containing semiconductor single-wall carbon nanotubes on the surface of the ionic colloid layer in the step 1 to form a semiconductor carbon nanotube layer;
step 3, coating a micrometer or submicron-width partition adhesive on the surface of the carbon nanotube layer in the step 2, and then depositing a metal electrode layer;
step 4, coating a millimeter-width partition adhesive on the surface of the partition adhesive in the step 3, and then coating a one-dimensional nano material on the surface of the metal electrode layer to form a one-dimensional nano material conducting layer;
and 5, dissolving the isolation glue in the step 3 and the step 4 by adopting a solvent, stripping the metal film and the one-dimensional nano material covered on the glue layer to form a source electrode and an electrode, and taking the conductive fiber core layer as a grid electrode to obtain the field effect transistor array.
8. The method of manufacturing according to claim 7, wherein: in the step 1, the content of the imidazole ionic liquid is 15-25 wt% of the polymer; the polymer is aqueous polyacrylic resin or a mixture of aqueous polyacrylic acid and polyurethane.
9. The method of manufacturing according to claim 7, wherein: in the step 3 and the step 4, the partition glue is a water-soluble polymer.
10. Use of an array of organic fiber based carbon nanotube field effect transistors according to any one of claims 1 to 6 for the preparation of a fiber based circuit.
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| US8780526B2 (en) * | 2010-06-15 | 2014-07-15 | Applied Nanostructured Solutions, Llc | Electrical devices containing carbon nanotube-infused fibers and methods for production thereof |
| KR20120034349A (en) * | 2010-10-01 | 2012-04-12 | 성균관대학교산학협력단 | Flexible field-effect transistor and manufacturing method of the same |
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