CN114141890A - Three-terminal structure has spectrum self-adaptation's optoelectronic system - Google Patents

Three-terminal structure has spectrum self-adaptation's optoelectronic system Download PDF

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CN114141890A
CN114141890A CN202111387837.2A CN202111387837A CN114141890A CN 114141890 A CN114141890 A CN 114141890A CN 202111387837 A CN202111387837 A CN 202111387837A CN 114141890 A CN114141890 A CN 114141890A
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terminal structure
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CN114141890B (en
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郭宏亮
薛超
孙强
张启明
刘如彬
张恒
姚立勇
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CETC 18 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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Abstract

The invention discloses a photoelectric system with a three-terminal structure and spectrum self-adaption, which belongs to the technical field of solar cells and is characterized by at least comprising the following components: the power supply module realizes a photoelectric conversion function and comprises a photocell; three output electrodes are arranged on the photocell; the three output electrodes are respectively a cathode, an anode and an electrode positioned in the middle of the epitaxial layer; the current measuring circuit, the power output circuit and the power input circuit are connected with the middle electrode of the epitaxial layer through the change-over switch; the acquisition module is used for acquiring the state parameters of the power module; the information processing module is used for receiving the data of the acquisition module, analyzing the data and controlling the working state of the selector switch according to the analysis result; wherein: the middle electrode of the epitaxial layer is connected with a static contact of the change-over switch; and three movable contacts of the change-over switch are respectively connected with the current measuring circuit, the power output circuit and the power input circuit.

Description

Three-terminal structure has spectrum self-adaptation's optoelectronic system
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a photoelectric system with a three-terminal structure and spectrum self-adaption.
Background
Solar cells are devices that convert light energy released by the sun into electrical energy. The photons released by the sun have a large energy range from ultraviolet to infrared, and due to the limitation of the photoelectric conversion mechanism of the solar cell, the cell must be designed with multiple junctions to reduce the overall heat loss. The current multi-junction battery comprises a lamination layer (double junction), a three junction, a four junction, a five junction, a six junction and the like; the electrodes are divided into two ends, three ends, four ends, multiple ends and the like. The solar cell can be divided into a light-gathering solar cell, a micro-light-gathering solar cell, a light-splitting solar cell and a normal-light solar cell according to the incident spectrum characteristics.
Disclosure of Invention
The invention provides a photoelectric system with a three-terminal structure and spectrum self-adaption, which aims to solve the technical problems in the prior art.
The invention aims to provide a photoelectric system with a three-terminal structure and spectrum self-adaptation, which at least comprises:
a power module (3) for realizing a photoelectric conversion function, the power module comprising a photovoltaic cell; three output electrodes are arranged on the photocell; the three output electrodes are respectively a cathode, an anode and an electrode positioned in the middle of the epitaxial layer;
a current measuring circuit, a power output circuit and a power input circuit which are connected with the middle electrode of the epitaxial layer through a selector switch (4);
the acquisition module is used for acquiring the state parameters of the power module;
the information processing module is used for receiving the data of the acquisition module, analyzing the data and controlling the working state of the selector switch according to the analysis result; wherein:
the Z pole is connected with a static contact of the change-over switch; and three movable contacts of the change-over switch are respectively connected with the current measuring circuit, the power output circuit and the power input circuit.
Preferably, the acquisition module comprises:
a current collector (2) connected with the T electrode;
a current sampler (1) mounted on the current measurement line.
Preferably, the photovoltaic cell is a multijunction solar cell, with a surface area of no more than 200cm2(ii) a Or the photovoltaic cell is a multi-junction solar cell, and has a surface area of not more than 200cm2。
Preferably, the power output line is a battery circuit, and the power input line is a current source circuit.
Preferably, the upper part of the photocell is of a double-electrode structure, the lower part of the photocell is of a solar cell surface electrode structure, the Z electrode is located on the double-electrode structure, and the width of the electrode is 0.01-0.5 mm.
Preferably, the lower part of the photocell is of a double-electrode structure, the upper part of the photocell is of a solar cell grid line structure, the Z electrode is located on the double-electrode structure, and the width of the Z electrode is 0.05-1.5 mm.
Preferably, a gap is formed between the electrode in the middle of the epitaxial layer and the electrode on the same surface, and the distance between the electrodes and the grid line is 1-3 mm.
Preferably, the photovoltaic cell consists of three subcells, GaInP, GaAs and InGaAs respectively.
Preferably, the lateral transmission layer and the graded buffer layer are arranged in the epitaxial structure of the photovoltaic cell.
The invention has the advantages and positive effects that:
compared with a two-end battery, the three-end battery has the most outstanding advantages that the constraint condition of current matching is eliminated, so that the design is more flexible, and higher efficiency is more easily obtained. In addition, compared with the traditional two-terminal battery, the three-terminal battery has the following advantages:
firstly, can realize the output of multiple sides, can realize the output of different power, different voltage under same light, satisfy the demand to the power during the different grade type.
And secondly, the influence caused by spectrum change can be better resisted, the batteries at two ends are sensitive to the spectrum, and the fluctuation of the spectrum can cause the change of the current-limiting sub-battery of the battery so as to influence the whole output power. For a three-terminal battery, on one hand, due to the reduction of current matching constraint, the influence of spectral fluctuation on the battery is weakened; on the other hand, the spectrum can be complemented by the form of external current injection, so that the battery can obtain stable power output.
And thirdly, the luminous coupling phenomenon can be better utilized, for example, in a GaAs/Si three-terminal battery, the luminous coupling generated by GaAs can be directly utilized by a Si battery without being influenced by the self working state of the silicon battery.
Drawings
FIG. 1 is a block diagram of the upper Z-shape in the preferred embodiment of the present invention;
FIG. 2 is a block diagram of the lower Z-shape in the preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of a cell grid structure according to a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of the connections between cells in accordance with a preferred embodiment of the present invention;
FIG. 5 is a circuit diagram representation of a preferred embodiment of the present invention;
FIG. 6 is a schematic diagram of the spectrum adaptation applied in the preferred embodiment of the present invention;
FIG. 7 is a schematic view of the application of the radiation-resistant space in the preferred embodiment of the present invention;
fig. 8 is a flow chart of a graded buffer layer structure in a preferred embodiment of the invention.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings:
as shown in fig. 1 to 8, the technical solution of the present invention is:
a photoelectric system with a three-terminal structure and spectrum self-adaptation comprises a photoelectric cell part, a current detection and analysis part and an additional power supply part; wherein:
the photovoltaic cell part:
the above photovoltaic cell has three electrodes in total. The uppermost battery is a negative electrode (T pole), the lowermost electrode is a positive electrode (B pole), and the electrode positioned in the middle of the epitaxial layer is a middle electrode (Z pole). The Z electrode can be divided into an upper Z type and a lower Z type according to the position of the Z electrode, wherein the upper Z type is shown in figure 1, and the lower Z type is shown in figure 2.
If the battery is in an upper Z shape, the upper part of the battery is in a double-electrode structure, and the lower part of the battery is in a conventional solar battery surface electrode structure. If the cell is of a lower Z shape, the lower part of the cell is of a double-electrode structure, and the upper part of the cell is of a conventional solar cell grid line structure.
The above-mentioned double-electrode structure is shown in fig. 3, and two electrodes have a gap therebetween, which are not connected to each other, thereby forming a cross structure. The distance between the grid lines with the same electrode is 1-3 mm, and the width of the electrode is 0.01-0.5 mm (upper Z type) and 0.05-1.5 mm (lower Z type).
The electrode material is gold, copper, silver or platinum.
The battery part may be a single battery or a plurality of batteries.
If the battery is a single battery, the area of the battery is not more than 200cm2(ii) a If the cell is a multi-cell, the sum of the areas should not be more than 200cm2And the batteries should be connected according to the method shown in fig. 4, and the batteries are connected in parallel.
The circuit control system comprises:
the circuit diagram of the detection system is shown in figure 5.
The circuit comprises 1-2 ammeters, one selector switch, a current source meter and a power output circuit.
The ammeter is responsible for collecting line current values and transmitting the line current values to a computer for data processing through wires (RS232, LAN and the like) or wireless (Bluetooth, wifi and the like).
If the single-channel ammeter is adopted, two ammeters are needed; if the ammeter is a dual-channel ammeter, only one set of ammeter is needed.
The above-mentioned change-over switch is mainly responsible for the switching of the circuit, can be a change-over switch or a set of change-over switches, and the change-over switch needs to satisfy the requirement of switching among three circuits. The three lines are respectively: a current measurement line, a power output line (e.g., a battery line), a power input line (e.g., a current source line).
In the current source meter, the range of the direct current output current is 0-5A, and the output value of the direct current output current is controlled by a computer or a manual work.
The power output circuit can have two forms, one is that the power output circuit is connected with a storage battery circuit to charge the battery, and then the storage battery outputs the battery; and secondly, the power is directly supplied to an external connection load. With the former being the preferred embodiment.
The computer and the control strategy part thereof are as follows:
an ammeter is added in a terminal B circuit at the T end of the battery, the reading is I, the current corresponding to the maximum power point under the T-B output condition is Im when the Z-B is open, the current passing through the Z-B end when the T-B and the Z-B are both short-circuited is Ip, and the current direction is set to be positive from the B pole of the Z pole channel (namely the Z pole flows out). Then consider the following two types of cases:
the first major category: ip is greater than or equal to 0
This large class corresponds to the case where the subcell between Z-B has excess current
(1) I > Im > Ip >0, which belongs to a two-terminal energy supply state at this time and is also the conventional working state of the solar cell at present.
(2) And Im, I, Ip and 0, wherein the luminous coupling of the upper two batteries is stronger, so that the efficiency of the third battery is increased, and the three-terminal battery is in an ideal working state.
(3) Ip > Im >0, when the Z-B subcell has a large excess current, more power is available from the main output of the Z-B terminal, and the T-B terminal can be used for auxiliary output.
(4) And when the current is in the optimal current matching state of the triple-junction battery, the output is carried out at two ends, and the system efficiency is maximum when the output current at the M end is zero.
The second major category: ip <0
This broad category corresponds to the situation where the subcell current is insufficient
(1) In the case of Im > Ip, an extra current is required for compensation, but since the input power is smaller than the output power gain, the battery efficiency as a whole increases.
(2) In the case of Ip > Im, where the battery is in a large current limiting state, more power may be available from the main output at the Z-T terminal, and the T-B terminal may be used for auxiliary output.
According to the analysis, the T output end is connected with an ammeter and then connected with a load, and the current value is detected in real time and fed back to the computer. The computer determines the working state of the battery according to the current value, and determines the output current value to feed back to the line change-over switch or (and) the current source. The line switch carries out line switching according to the computer command. The current source outputs a current to the M pole of the battery according to the setting.
A CAP layer structure made of GaAs with a thickness of 50-500 nm, n-type doping with a doping concentration of 2E 17-2E 18cm-3。
The GaInP sub-battery structure comprises three parts from top to bottom: n-type AlInP or AlGaInP window layer (doping concentration 1E 17-1E 18 cm)-350 to 200nm thick) n-type doped GaInP (doping concentration 1E17 to 1E18cm-350 to 500nm thick, P-type doped GaInP (doping concentration 1E17 to 1E18 cm)-3500 to 1500nm thick).
The GaInP/AlGaAs tunneling junction structure is divided into two parts from top to bottom, wherein the two parts are respectively n-type GaInP (doping concentration is 5E 18-5E 19 cm)-320 to 200nm thick), p-type AlGaAs (doping concentration 5E18 to 5E19 cm)-3And 20 to 200nm in thickness).
The GaAs sub-cell structure comprises four parts from top to bottom, which are n-type AlGaAs window layers (doping concentration 5E 17-5E 18 cm)-350 to 200nm thick), n-type doped GaAs or AlGaAs layer (doping concentration 2E17 to 2E18 cm)-350 to 500nm thick) p-type doped GaAs layer (doping concentration 1E17 to 1E18cm-3500-2000 nm thick) p-type doped AlGaAs lateral conduction layer (doping concentration 5E 17-5E 18 cm)-3And the thickness is 100 to 3000nm).
The GaAs/AlGaAs tunnel junction structure is divided into three parts from top to bottom, which are n-type GaAs or AlGaAs (doping concentration 5E 18-5E 19 cm)-320 to 200nm in thickness), an i-type GaInP layer (5 to 50nm in thickness), and a p-type AlGaAs (doping concentration 5E18 to 5E19 cm)-3And 20 to 200nm in thickness). Wherein the i-type GaInP layer is an etching barrier layer.
The InGaAs sub-cell structure comprises four parts from top to bottom, which are respectively an n-type InGaAs window layer (doping concentration 5E 17-5E 18 cm)-350 to 200nm thick) n-type doped InGaAs layer (doping concentration 2E17 to 2E18cm-350 to 500nm thick) p-type doped InGaAs layer (doping concentration 1E17 to 1E18cm-3A thickness of 500-2000 nm), and a p-type doped InGaAs lateral conductive layer (doping concentration of 5E 17-5E 18 cm)-3And the thickness is 100 to 3000nm).
AlxGa1-x-yInyThe As crystal lattice gradual change buffer layer structure has the In content which is sequentially increased from top to bottom, wherein the In content at the uppermost end is 0% (y is 0), and the In proportion at the lowermost end is 20-40% (y is more than or equal to 0.2 and less than or equal to 0.4). The Al content in the thickness is 40-90% (x is more than or equal to 0.4 and less than or equal to 0.9, and x + y is satisfied at any position in the layer<1). The total thickness of the graded buffer layer is 500-5000 nm, and the doping concentration is 1E 17-1E 18cm-3. The change in lattice constant of the graded buffer layer is shown in fig. 8.
The process for the preparation of the photovoltaic cell is described below.
The preparation process of the photovoltaic cell comprises an upper Z-shaped preparation process and a lower Z-shaped preparation process:
the upper Z-shaped preparation process comprises the following steps:
1. epitaxial growth, growing nucleation layer, buffer layer, CAP layer, GaInP sub-cell, GaInP/AlGaAs tunnel junction, GaAs sub-cell, GaAs/AlGaAs tunnel junction, Al on GaAs substratexGa1-x-yInyAn As lattice gradient buffer layer and an InGaAs sub-battery.
2. And evaporating a lower electrode, pasting a temporary substrate, and corroding the GaAs substrate to expose the CAP layer.
3. Photoetching process A of etching Z-pole shape
4. Etching or etching InGaAs in the Z-pole region
5. Evaporation Z electrode
6. Removing photoresist, and performing secondary photoetching: etching to obtain T-pole shape
7. Evaporation T electrode
8. Etching the CAP layer
9. Removing photoresist and evaporating antireflection film
The preparation process of the lower Z type comprises the following steps:
1. epitaxial growth, growing nucleation layer, buffer layer, CAP layer, GaInP sub-cell, GaInP/AlGaAs tunnel junction, GaAs sub-cell, GaAs/AlGaAs tunnel junction, Al on GaAs substratexGa1-x-yInyAn As lattice gradient buffer layer and an InGaAs sub-battery.
2. Photoetching process A of etching Z-pole shape
3. Etching or etching InGaAs in the Z-pole region
4. Evaporation Z electrode
5. Removing photoresist, and performing secondary photoetching: etching to obtain T-pole shape
6. Evaporation T electrode
7. Etching the CAP layer
8. Removing photoresist, transferring to temporary substrate
9. Etching GaAs substrate, photoetching process and evaporation plating upper electrode
10. And corroding the CAP layer and evaporating an antireflection film.
The photovoltaic cell using environment comprises the following steps:
the photovoltaic cell described above can have multiple environments of use, two examples of which are listed below
Use environment 1 spectral change situation
The calculation flow chart is shown in figure 6
When the system detects that the output current abnormally decreases, the system considers that the environment spectrum changes at the moment, the Z-B is connected with the ammeter at the moment, the current of the ammeter is measured, the analysis is carried out according to the method of the invention, and the circuit is switched into a current source (power input) circuit or a storage battery (power output) circuit according to the corresponding analysis result.
Use environment 2: a radiation-resistant battery:
the calculation flow chart is shown in FIG. 7;
the current limiting state of the sub-battery is changed due to different radiation degradation speeds of the batteries. Therefore, redundant current in the early stage of service can be stored through three-terminal input, and current supplement is carried out in the later stage. The solar cell is a GaInP/GaAs/GaInAs three-junction solar cell. This results in an increase in overall battery power.
In the early service period, the Z-B terminal battery has excess current, and the excess current can be stored in the storage battery; in the later period of service, the battery at the Z-B terminal has insufficient current, and the current can be supplemented from a current source (driven by a storage battery).
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.

Claims (9)

1. An optoelectronic system with a three-terminal structure and spectrum self-adaptation, characterized by comprising at least:
a power module (3) for realizing a photoelectric conversion function, the power module comprising a photovoltaic cell; three output electrodes are arranged on the photocell; the three output electrodes are respectively a cathode, an anode and an electrode positioned in the middle of the epitaxial layer;
a current measuring circuit, a power output circuit and a power input circuit which are connected with the middle electrode of the epitaxial layer through a selector switch (4);
the acquisition module is used for acquiring the state parameters of the power module;
the information processing module is used for receiving the data of the acquisition module, analyzing the data and controlling the working state of the selector switch according to the analysis result; wherein:
the Z pole is connected with a static contact of the change-over switch; and three movable contacts of the change-over switch are respectively connected with the current measuring circuit, the power output circuit and the power input circuit.
2. The three-terminal structure spectrally adaptive optoelectronic system of claim 1, wherein said acquisition module comprises:
a current collector (2) connected with the T electrode;
a current sampler (1) mounted on the current measurement line.
3. The three-terminal structure of claim 1 having a spectrally adaptive optoelectronic systemThe photovoltaic cell is a multi-junction solar cell, and the surface area of the photovoltaic cell is not more than 200cm2(ii) a Or the photovoltaic cell is a multi-junction solar cell, and has a surface area of not more than 200cm2。
4. The three-terminal spectrally adaptive photovoltaic system of claim 1 wherein said power output circuit is a battery circuit and said power input circuit is a current source circuit.
5. The photovoltaic system with the three-terminal structure and the spectrum self-adaptation function according to claim 1, wherein the photovoltaic cell is provided with a double-electrode structure above and a solar cell surface electrode structure below, the Z electrode is arranged on the double-electrode structure, and the width of the Z electrode is 0.01-0.5 mm.
6. The photovoltaic system with the three-terminal structure and the spectrum self-adaptation function according to claim 1, wherein the photovoltaic cell is provided with a double-electrode structure below and a solar cell grid line structure above, the Z electrode is positioned on the double-electrode structure, and the width of the Z electrode is 0.05-1.5 mm.
7. The three-terminal structure spectrally adaptive photovoltaic system according to claim 5 or 6, wherein a gap is formed between the middle electrode of the epitaxial layer and the electrode on the same surface, and the distance between the grid lines of the same electrode is 1-3 mm.
8. The three-terminal structure spectrally adaptive photovoltaic system of claim 1, wherein said photovoltaic cell is composed of three subcells, GaInP, GaAs and InGaAs respectively.
9. The three-terminal structure spectrally adaptive photovoltaic system of claim 8, wherein a lateral transport layer and a graded buffer layer are provided in the epitaxial structure of the photovoltaic cell.
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