CN114094839A - Inductive energy storage type isolated DC-DC converter and control method thereof - Google Patents
Inductive energy storage type isolated DC-DC converter and control method thereof Download PDFInfo
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- CN114094839A CN114094839A CN202210024661.2A CN202210024661A CN114094839A CN 114094839 A CN114094839 A CN 114094839A CN 202210024661 A CN202210024661 A CN 202210024661A CN 114094839 A CN114094839 A CN 114094839A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/3353—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having at least two simultaneously operating switches on the input side, e.g. "double forward" or "double (switched) flyback" converter
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/12—Arrangements for reducing harmonics from ac input or output
Abstract
The invention discloses an inductance energy storage type isolated DC-DC converter and a control method thereof, and relates to the field of power electronics and power transmission. The inductance energy storage type isolation DC-DC converter realizes isolation between input and output of the converter by utilizing the electrical isolation characteristic when a semiconductor power device is turned off, stores electric energy through an inductor, charges the inductor at the input side, absorbs the energy of the inductor at the output side, realizes time-sharing transfer of energy through time-sharing switching-on of power semiconductor switches at the input side and the output side, realizes electrical insulation of output voltage and input voltage by combining the switching characteristic of the semiconductor device and further realizes electrical insulation of the input side and the output side, and can realize buck-boost conversion without using an isolation transformer.
Description
Technical Field
The invention relates to the field of power electronics and power transmission, in particular to an inductive energy storage type isolated DC-DC converter and a control method thereof.
Background
The isolated DC-DC converter is widely applied in the fields of mobile phone chargers, vehicle-mounted chargers, electric vehicle charging piles, power electronic transformers, modular multilevel converters, data centers, micro-grids, multi-converter module series-parallel combination systems, energy routers and the like.
Generally, the isolated DC-DC converter includes a forward DC-DC converter, a flyback DC-DC converter, a push-pull DC-DC converter, a half-bridge isolated DC-DC converter, a full-bridge isolated DC-DC converter, an LLC isolated DC-DC converter, and the like. As the technology innovation and research progresses, a variety of isolated DC-DC converters have come into use, but all of them have an isolation transformer. The isolation transformer is a core device of the isolated power electronic converter. However, when the switching frequency of the power electronic converter is low, the isolation transformer serving as a passive element has a large volume, the design of parameters of the isolation transformer is complex, stray parameters are numerous, the principle is relatively difficult to master, and the processing and design of magnetic materials of a high-power high-frequency transformer are difficult, so that the large-capacity development step of the isolation transformer is restricted.
Disclosure of Invention
In view of the above problems, the present invention provides an inductive energy storage type isolated DC-DC converter and a control method thereof, which can realize electrical isolation and buck-boost conversion on an input side and an output side without using an isolation transformer, and have the advantages of simple design and control.
The technical scheme of the invention is as follows:
when the circuit works, the circuit is adjusted according to the technical scheme of the invention, the primary side direct current voltage source to be converted and the first capacitor are connected into the circuit in parallel, and the converted secondary side direct current voltage source and the second capacitor are connected into the circuit in parallel. Working state 1: a first control module of the controller controls the first power semiconductor switch element and the third power semiconductor switch element to be conducted simultaneously, and primary side direct current voltage is applied to the inductor to increase the current amplitude of the inductor. And 2, working state: the first control module controls the first power semiconductor switch and the third power semiconductor switch to be turned off at the same time, the third control module controls the fourth power semiconductor switch and the sixth power semiconductor switch to be turned off at the same time, the second control module controls the second power semiconductor switch to be turned on, the fourth control module controls the fifth power semiconductor switch to be turned on, and the inductive current flows through the second power semiconductor switch and the fifth power semiconductor switch to follow current. And 3, working state: the first control module controls the first power semiconductor switch and the third power semiconductor switch to be turned off at the same time, the second control module controls the second power semiconductor switch to be turned on, the third control module controls the fourth power semiconductor switch and the sixth power semiconductor switch to be turned on at the same time, the fourth control module controls the fifth power semiconductor switch to be turned off, the inductive current flows into the secondary side loop through the fourth power semiconductor switch and the sixth power semiconductor switch, and the amplitude of the inductive current is reduced. The inductance energy storage type isolation DC-DC converter realizes isolation between input and output of the converter by utilizing the electrical isolation characteristic when a semiconductor power device is turned off, stores electric energy through an inductor, charges the inductor at the input side, absorbs the energy of the inductor at the output side, realizes time-sharing transfer of energy through time-sharing switching-on of power semiconductor switches at the input side and the output side, realizes electrical insulation of output voltage and input voltage by combining the switching characteristic of the semiconductor device and further realizes electrical insulation of the input side and the output side, and can realize buck-boost conversion without using an isolation transformer.
In a further technical solution, inductors are connected between the first node and the third node, and between the second node and the fourth node.
The inductors are connected between the first node and the third node and between the second node and the fourth node, so that the common mode noise rejection capability of the system is enhanced.
In a further technical solution, the first power semiconductor switch, the second power semiconductor switch, the third power semiconductor switch, the fourth power semiconductor switch, the fifth power semiconductor switch and the sixth power semiconductor switch are all first type switches, and the first type switches include fully-controlled power semiconductor devices, half-controlled power semiconductor devices or combinations, where the combinations include series, parallel, anti-parallel or anti-series combinations of the fully-controlled power semiconductor devices, and series, parallel, anti-parallel or anti-series combinations of the half-controlled power semiconductor devices.
In a further technical solution, the first power semiconductor switching element, the second power semiconductor switching element, the third power semiconductor switching element, the fourth power semiconductor switching element, the fifth power semiconductor switching element and the sixth power semiconductor switching element are all series, parallel, anti-parallel or anti-series combinations of the first type switch and the second type switch, wherein the second type switch includes a power diode, a series combination of power diodes or a parallel combination of power diodes.
In a further technical solution, the first power semiconductor switching element, the second power semiconductor switching element, the third power semiconductor switching element, the fourth power semiconductor switching element, the fifth power semiconductor switching element, and the sixth power semiconductor switching element are all second type switches, and the second type switches include power diodes, a series combination of power diodes, or a parallel combination of power diodes.
Another aspect of the present invention provides a control method using the above-mentioned isolated DC-DC converter of inductive energy storage type, including the following steps:
the first control module controls the first power semiconductor switch element and the third power semiconductor switch element to be conducted simultaneously, primary side direct current voltage is applied to the inductor, and the current amplitude of the inductor is increased;
the first control module controls the first power semiconductor switch and the third power semiconductor switch to be turned off at the same time, the third control module controls the fourth power semiconductor switch and the sixth power semiconductor switch to be turned off at the same time, the second control module controls the second power semiconductor switch to be turned on, the fourth control module controls the fifth power semiconductor switch to be turned on, and the inductive current flows through the second power semiconductor switch and the fifth power semiconductor switch to follow current;
the first control module controls the first power semiconductor switch and the third power semiconductor switch to be turned off at the same time, the second control module controls the second power semiconductor switch to be turned on, the third control module controls the fourth power semiconductor switch and the sixth power semiconductor switch to be turned on at the same time, the fourth control module controls the fifth power semiconductor switch to be turned off, the inductive current flows into the secondary side loop through the fourth power semiconductor switch and the sixth power semiconductor switch, and the amplitude of the inductive current is reduced.
The invention has the beneficial effects that:
1. the inductance energy storage type isolated DC-DC converter realizes isolation between input and output of the converter by utilizing the electrical isolation characteristic of a semiconductor power device when the semiconductor power device is turned off, stores electric energy through an inductor, charges the inductor at the input side, absorbs the energy of the inductor at the output side, realizes time-sharing transfer of energy through time-sharing switching-on of power semiconductor switches at the input side and the output side, combines the switching characteristic of the semiconductor device, further realizes electrical insulation of the input side and the output side, can realize electrical insulation of output voltage and input voltage, can realize buck-boost conversion, and does not need to use an isolation transformer;
2. the inductors are connected between the first node and the third node and between the second node and the fourth node, so that the common mode noise rejection capability of the system is enhanced.
Drawings
Fig. 1 is a schematic circuit diagram of an inductive energy storage type isolated DC-DC converter according to embodiment 1 of the present invention;
fig. 2 is a schematic diagram of the switching timing and state of the inductive energy storage type isolated DC-DC converter according to embodiment 1 of the present invention;
fig. 3 is a schematic diagram of a power semiconductor switch according to embodiment 2 of the present invention;
fig. 4 is a schematic diagram of a series combination of power semiconductor switches according to embodiment 3 of the present invention;
fig. 5 is a schematic diagram of a parallel combination of power semiconductor switches according to embodiment 4 of the present invention;
fig. 6 is a schematic circuit diagram of the inductive energy storage type isolated DC-DC converter adopting a fully-controlled power semiconductor switching device according to embodiment 5 of the present invention;
fig. 7 is a schematic circuit diagram of the inductive energy storage type isolated DC-DC converter according to embodiment 6 of the present invention, which uses a power diode in combination with a fully-controlled power semiconductor switching device.
Description of reference numerals:
T1U-a first power semiconductor switching element; t is1M-a second power semiconductor switching element; t is1L-a third power semiconductor switching device; t is2U-a fourth power semiconductor switching element; t is2M-a fifth power semiconductor switching device; t is2L-a sixth power semiconductor switching element; c1A first capacitance C2-a second capacitance; h1-a first node; h2-a second node; h3-a third node; h4-a fourth node; v1-a primary side direct current voltage source; v2-a secondary side direct current voltage source; l is1-a first inductance; l is2-a second inductance; g1A first control signal G1M-a second control signal; g2-a third control signal G2M-a fourth control signal.
Detailed Description
The embodiments of the present invention will be further described with reference to the accompanying drawings.
Example 1:
as shown in fig. 1, an aspect of the present invention provides an isolated DC-DC converter of an inductive energy storage type, which includes a primary-side loop, a secondary-side loop and a controller.
The primary side loop comprises a first power semiconductor switch element T1UA second power semiconductor switching element T1MA third power semiconductor switching element T1LAnd a first capacitor, the first power semiconductor switch T1UA second power semiconductor switching element T1MA third power semiconductor switching element T1LAre sequentially connected in series to form a first series branch, and the first capacitor C1A DC voltage source V connected with the first series branch and the primary side1And (4) connecting in parallel. The first power semiconductor switch element T1UAnd a second power semiconductor switching device T1MA first node H is arranged between1Said second power semiconductor switching device T1MAnd a third power semiconductor switching device T1LA second node H is arranged between2。
The secondary side loop comprises a fourth power semiconductor switch element T2UA fifth power semiconductor switching element T2MSixth power semiconductor switching element T2LAnd a second capacitor, the fourth power semiconductor switch T2UA fifth power semiconductor switching element T2MSixth power semiconductor switching element T2LAre sequentially connected in series to form a second series branch, and the second capacitor C2A DC voltage source V connected with the second series branch and the secondary side2And (4) connecting in parallel. The fourth power semiconductor switching element T2UAnd a fifth power semiconductor switching device T2MA third node H is arranged between3Said fifth power semiconductor switching device T2MAnd a sixth power semiconductor switching device T2LIs provided with a fourth node H4. The first node H1And a third node H3Is connected to the second node H2And a fourth node H4Is connected, and the first node H1And a third node H3And the second node H2And a fourth node H4At least one part between the two ends is connected with an inductor. For example, a first inductance L can be connected to each1And a second inductance L2。
The controller comprises a first control module, a second control module, a third control module and a fourth control module, wherein the first control module is used for controlling the first power semiconductor switch element T1UAnd a third power semiconductor switching device T1LAnd carrying out unified control. The second control module is used for controlling the second power semiconductor switch part T1MAnd (5) controlling. The third control module is used for controlling the fourth power semiconductor switch part T2UAnd a sixth power semiconductor switching device T2LAnd carrying out unified control. The fourth control module is used for controlling the fifth power semiconductor switch element T2MAnd (5) controlling. For example, as shown in FIG. 2, the first control module passes a first control signal G1For the first power semiconductor switch device T1UAnd a third power semiconductor switching device T1LPerforming unified control, wherein the corresponding conduction time is t1The second control module passes through a second control signal G1MFor the second power semiconductor switch device T1MControl is carried out with corresponding on-time t2The third control module passes a third control signal G2For the fourth power semiconductor switch device T2UAnd a sixth power semiconductor switching device T2LPerforming unified control, wherein the corresponding conduction time is t3The fourth control module passes through a fourth control signal G2MFor the fifth power semiconductor switch device T2MControl is carried out with corresponding on-time t4. Here, the switching elements of the first series branch cannot be simultaneously turned on, and the switching elements of the second series branch cannot be simultaneously turned on. Here, the first power semiconductor switching device T1UA third power semiconductor switching element T1LA fourth power semiconductor switching element T2UAnd a sixth power semiconductor switching device T2LCannot be turned on simultaneously.
The working principle of the technical scheme is as follows:
in operation, as shown in fig. 1-2, the primary side dc voltage source V to be converted is adjusted by the circuit according to the present invention1And a first capacitor C1Parallel connection to circuit, converted secondary side DC voltage source V2And a second capacitor C2The circuit is connected in parallel. Working state 1: the first control module of the controller controls the first power semiconductor switch T1UAnd a third power semiconductor switching device T1LAnd at the same time, the primary side direct current voltage is applied to the inductor, and the current amplitude of the inductor is increased. And 2, working state: the first control module controls a first power semiconductor switch element T1UAnd a third power semiconductor switching device T1LSimultaneously turned off, and the third control module controls the fourth power semiconductorSwitch T2UAnd a sixth power semiconductor switching device T2LSimultaneously turned off, and the second control module controls the second power semiconductor switch element T1MOn, the fourth control module controls the fifth power semiconductor switch element T2MOn, the inductive current flows through the second power semiconductor switch element T1MAnd a fifth power semiconductor switching device T2MFollow current is performed. And 3, working state: the first control module controls the first power semiconductor switch T1U and the third power semiconductor switch T1L to be turned off at the same time, the second control module controls the second power semiconductor switch T1M to be turned on, the third control module controls the fourth power semiconductor switch T2U and the sixth power semiconductor switch T2L to be turned on at the same time, the fourth control module controls the fifth power semiconductor switch T2M to be turned off, the inductive current flows into a secondary side loop through the fourth power semiconductor switch T2U and the sixth power semiconductor switch T2L, and the amplitude of the inductive current is reduced. The inductance energy storage type isolation DC-DC converter realizes isolation between input and output of the converter by utilizing the electrical isolation characteristic when a semiconductor power device is turned off, stores electric energy through an inductor, charges the inductor at the input side, absorbs the energy of the inductor at the output side, realizes time-sharing transfer of energy through time-sharing switching-on of power semiconductor switches at the input side and the output side, realizes electrical insulation of output voltage and input voltage by combining the switching characteristic of the semiconductor device and further realizes electrical insulation of the input side and the output side, and can realize buck-boost conversion without using an isolation transformer.
In a further embodiment, as shown in fig. 1, the first node H1And a third node H3And the second node H2And a fourth node H4Inductors are connected between the two (including a first inductor L)1And a second inductance L2). By at the first node H1And a third node H3And a second node H2And a fourth node H4And inductors are connected between the two inductors, so that the common mode noise rejection capability of the system is enhanced.
In a further embodiment, the first power semiconductor switching element, the second power semiconductor switching element, the third power semiconductor switching element, the fourth power semiconductor switching element, the fifth power semiconductor switching element and the sixth power semiconductor switching element are all first type switches, and the first type switches comprise fully-controlled power semiconductor devices, half-controlled power semiconductor devices or combinations, wherein the combinations comprise series, parallel, anti-parallel or anti-series combinations of fully-controlled power semiconductor devices, and series, parallel, anti-parallel or anti-series combinations of half-controlled power semiconductor devices. For example, the controllable Power semiconductor device symbol may represent an Insulated Gate Bipolar Transistor (IGBT), a Power field effect transistor (Power mosfet), a silicon carbide (SiC) Power semiconductor device, a gallium nitride (GAN) Power semiconductor device, and may also refer to a thyristor (SCR), a gate turn-off thyristor, and the like.
In a further embodiment, the first power semiconductor switching element, the second power semiconductor switching element, the third power semiconductor switching element, the fourth power semiconductor switching element, the fifth power semiconductor switching element and the sixth power semiconductor switching element are each a series, parallel, anti-parallel or anti-series combination of said first type of switch and said second type of switch, wherein said second type of switch comprises a power diode, a series combination of power diodes or a parallel combination of power diodes.
In a further embodiment, the first, second, third, fourth, fifth and sixth power semiconductor switching devices are each a second type of switch comprising a power diode, a series combination of power diodes or a parallel combination of power diodes.
Example 2:
as shown in fig. 3, the present embodiment has the same other features as those of embodiment 1, except that the power semiconductor switching devices are IGBT and reverse conducting IGBT in the form of an IGBT and a diode connected in series from left to right.
Example 3:
as shown in fig. 4, the present embodiment has the same features as those of embodiment 1, except that the series combination of the power semiconductor switching devices is, in order from left to right, a series connection of IGBTs and series connection of reverse conducting IGBTs, an overall series connection of IGBTs and diodes connected in series, a series connection of diodes, and a reverse conducting IGBT.
Example 4:
as shown in fig. 5, the present embodiment has the same other features as those of embodiment 1, except that the power semiconductor switching devices are, in order from left to right, an IGBT parallel combination, a diode parallel combination, a reverse conducting IGBT parallel combination, an IGBT and a diode connected in series and then combined in parallel, an anti-parallel IGBT combination, and an IGBT and a diode connected in series and then combined in anti-parallel.
Example 5:
as shown in fig. 6, the present embodiment has the same other features as embodiment 1 except that the first power semiconductor switching device T1UA second power semiconductor switching element T1MA third power semiconductor switching element T1LA fourth power semiconductor switching element T2UA fifth power semiconductor switching element T2MAnd a sixth power semiconductor switching device T2LAre all reverse conducting type IGBTs.
Example 6:
as shown in fig. 7, the present embodiment has the same other features as embodiment 1 except that the first power semiconductor switching device T1UA third power semiconductor switching element T1LAnd a fifth power semiconductor switching device T2MThe second power semiconductor switch device T is a fully-controlled power semiconductor device1MA fourth power semiconductor switching element T2UAnd a sixth power semiconductor switching device T2LIs a power diode.
Example 7:
as shown in fig. 1-2, another aspect of the present invention provides a control method using the isolated DC-DC converter of inductive energy storage type as described above, including the following steps:
working state 1: the first control module controls a first power semiconductor switch element T1UAnd a third power semiconductor switching device T1LAt the same time, other switches are turned off, and a primary side DC voltage is applied to the power supplyAnd the inductor current amplitude is increased.
And 2, working state: the first control module controls a first power semiconductor switch element T1UAnd a third power semiconductor switching device T1LSimultaneously turned off, and the third control module controls the fourth power semiconductor switching element T2UAnd a sixth power semiconductor switching device T2LSimultaneously turned off, and the second control module controls the second power semiconductor switch element T1MOn, the fourth control module controls the fifth power semiconductor switch element T2MOn, the inductive current flows through the second power semiconductor switch element T1MAnd a fifth power semiconductor switching device T2MFollow current is performed.
And 3, working state: the first control module controls a first power semiconductor switch element T1UAnd a third power semiconductor switching device T1LSimultaneously turned off, and the second control module controls the second power semiconductor switch element T1MConducting, the third control module controls the fourth power semiconductor switch T2UAnd a sixth power semiconductor switching device T2LAre simultaneously conducted, and the fourth control module controls the fifth power semiconductor switch element T2MTurn-off, inductor current through the fourth power semiconductor switching device T2UAnd a sixth power semiconductor switching device T2LAnd flows into a secondary side loop, and the amplitude of the inductive current is reduced.
The above-mentioned embodiments only express the specific embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (6)
1. An inductance energy storage type isolation DC-DC converter is characterized by comprising a primary side loop, a secondary side loop and a controller, wherein the primary side loop comprises a first power semiconductor switch element, a second power semiconductor switch element, a third power semiconductor switch element and a first capacitor, the first power semiconductor switch element, the second power semiconductor switch element and the third power semiconductor switch element are sequentially connected in series to form a first series branch, and the first capacitor is connected with the first series branch and a primary side direct-current voltage source in parallel; a first node is arranged between the first power semiconductor switch and the second power semiconductor switch, and a second node is arranged between the second power semiconductor switch and the third power semiconductor switch; the secondary side loop comprises a fourth power semiconductor switching element, a fifth power semiconductor switching element, a sixth power semiconductor switching element and a second capacitor, the fourth power semiconductor switching element, the fifth power semiconductor switching element and the sixth power semiconductor switching element are sequentially connected in series to form a second series branch, and the second capacitor is connected with the second series branch and a secondary side direct-current voltage source in parallel; a third node is arranged between the fourth power semiconductor switch element and the fifth power semiconductor switch element, and a fourth node is arranged between the fifth power semiconductor switch element and the sixth power semiconductor switch element; inductors are connected at least at one position between the first node and the third node and between the second node and the fourth node; the controller comprises a first control module, a second control module, a third control module and a fourth control module, wherein the first control module is used for uniformly controlling the first power semiconductor switch element and the third power semiconductor switch element; the second control module is used for controlling the second power semiconductor switch; the third control module is used for uniformly controlling the fourth power semiconductor switch element and the sixth power semiconductor switch element; the fourth control module is used for controlling the fifth power semiconductor switch.
2. An inductive energy storage isolated DC-DC converter according to claim 1, characterized in that inductors are connected between the first node and the third node and between the second node and the fourth node.
3. An inductive energy storage isolated DC-DC converter according to claim 1, characterized in that the first, second, third, fourth, fifth and sixth power semiconductor switches are all switches of a first type, and the switches of the first type comprise fully-controlled power semiconductor devices, half-controlled power semiconductor devices or combinations, wherein the combinations comprise series, parallel, anti-parallel or anti-series combinations of fully-controlled power semiconductor devices and series, parallel, anti-parallel or anti-series combinations of half-controlled power semiconductor devices.
4. An inductive energy storage isolated DC-DC converter according to claim 2 wherein the first, second, third, fourth, fifth and sixth power semiconductor switches are series, parallel, anti-parallel or anti-series combinations of the first and second type switches, wherein the second type switch comprises a power diode, a series combination of power diodes or a parallel combination of power diodes.
5. An inductive energy storage type isolated DC-DC converter according to claim 1, characterized in that the first, second, third, fourth, fifth and sixth power semiconductor switches are a second type of switch, and the second type of switch comprises a power diode, a series combination of power diodes or a parallel combination of power diodes.
6. A control method using an isolated DC-DC converter of the inductive energy storage type according to any of claims 1 to 5, comprising the steps of:
working state 1: the first control module controls the first power semiconductor switch element and the third power semiconductor switch element to be conducted simultaneously, primary side direct current voltage is applied to the inductor, and the current amplitude of the inductor is increased;
and 2, working state: the first control module controls the first power semiconductor switch and the third power semiconductor switch to be turned off at the same time, the third control module controls the fourth power semiconductor switch and the sixth power semiconductor switch to be turned off at the same time, the second control module controls the second power semiconductor switch to be turned on, the fourth control module controls the fifth power semiconductor switch to be turned on, and the inductive current flows through the second power semiconductor switch and the fifth power semiconductor switch to follow current;
and 3, working state: the first control module controls the first power semiconductor switch and the third power semiconductor switch to be turned off at the same time, the second control module controls the second power semiconductor switch to be turned on, the third control module controls the fourth power semiconductor switch and the sixth power semiconductor switch to be turned on at the same time, the fourth control module controls the fifth power semiconductor switch to be turned off, the inductive current flows into the secondary side loop through the fourth power semiconductor switch and the sixth power semiconductor switch, and the amplitude of the inductive current is reduced.
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