CN113422563A - Power electronic controller based on SIC power semiconductor single tube parallel connection - Google Patents

Power electronic controller based on SIC power semiconductor single tube parallel connection Download PDF

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Publication number
CN113422563A
CN113422563A CN202110623736.4A CN202110623736A CN113422563A CN 113422563 A CN113422563 A CN 113422563A CN 202110623736 A CN202110623736 A CN 202110623736A CN 113422563 A CN113422563 A CN 113422563A
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China
Prior art keywords
sic
discrete device
mosefet
bridge
full
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CN202110623736.4A
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Chinese (zh)
Inventor
张超
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Zhejiang Yikong Power System Co ltd
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Zhejiang Yikong Power System Co ltd
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Priority to CN202110623736.4A priority Critical patent/CN113422563A/en
Publication of CN113422563A publication Critical patent/CN113422563A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Thermal Sciences (AREA)
  • Inverter Devices (AREA)

Abstract

The invention discloses a power electronic controller based on SIC power semiconductor single tubes in parallel connection, which comprises a shell, a discrete device module, a driving circuit board, a control circuit board, a capacitor module, a filtering module and a water cooling module, wherein the discrete device module, the driving circuit board, the control circuit board, the filtering module and the water cooling module are all arranged on the shell. The invention discloses a power electronic controller based on SIC power semiconductor single-tube parallel connection, which is based on SIC-based power semiconductor discrete devices, uses the discrete devices to perform single-tube parallel connection, and meets the requirements of inverters for electric vehicles with different powers and current grades.

Description

Power electronic controller based on SIC power semiconductor single tube parallel connection
Technical Field
The invention belongs to the technical field of power electronic controllers, and particularly relates to a power electronic controller based on SIC power semiconductor single-tube parallel connection.
Background
In a motor drive system for driving a motor, the rotational speed of the drive motor is controlled and regulated by an electronic power controller PEU, which simultaneously inverts a dc high voltage input from, for example, a power battery into an ac high voltage as a current input to the drive motor. The main functions of the PEU include the following two points:
first, as an energy transmission device between the power battery and the driving motor, it has an inverter function, i.e., a DC-AC conversion function, and for example, it can convert a high-voltage direct current input from the power battery into a three-phase high-voltage alternating current to be transmitted to the driving motor;
secondly, the Control signal interface circuit and the driving motor Control circuit are used for receiving signals sent by a Vehicle Control Unit (VCU) and signals of motor temperature, speed, power and the like, making corresponding feedback, and feeding the signals back to the VCU and the driving motor, thereby playing a role in controlling the driving motor. At present, a single traditional three-phase full-bridge inversion power module is adopted by an electric power electronic controller, and for a driving motor of an electric automobile with larger power, the maximum allowable current of a power device is easily limited. Most PEUs in the market today use standard packaged IGBT power modules, based on SI-based power semiconductors.
The inverter products in the current market mainly have the following defects:
1. a mass production inverter product in the new energy electric vehicle market is designed by using an IGBT module on the basis of an SI-based power semiconductor.
2. The mass production inverter products in the electric vehicle market, except for the TELSA, package power devices (SI-based or SIC-based semiconductors) into a power module, and the inverter is based on the power module, such as the British flying FS820 product series. The problem of doing so is that the electric vehicle requirements of different power classes cannot be met. The inverter output power is fixed in a range, such as about 150KW in the british flying FS820 series. The power grade is not expandable and is limited by the IGBT packaging module.
3. EMC problem of SIC based power semiconductor controller. The EMC of the Si-based inverter in the current market has certain problems in different degrees. The SIC-based power semiconductor EMC problem is more severe. Compared with the SI-based semiconductor, the SIC-based power semiconductor has a higher switching frequency, and thus causes more severe EMC problems.
4. The product generally has the problems of large volume and low integration level. High cost and low power density. Taking an SI-based IGBT packaging module (England flying FS820 series) inverter as an example, the volume of the inverter in the domestic electric vehicle market is generally about 7L, and the power density is lower than 25 KW/L. This is mainly due to the low capability of SI-based power semiconductors themselves, the limited structural design of IGBT modules using standard packaging, and the high cost of standard packaged modules from the english-flying company. The electric vehicle inverter control circuit board of domestic volume production, drive circuit board components of a whole that can function independently structure, drive plate and control circuit board are connected with the winding displacement, or with the board to the board connector assembly connection, and are with high costs, and the integrated level is low.
5. Inverter products designed on the basis of SI-based IGBT modules generally have the problem of large stray inductance of inverter loops, and the inductance of the inverter loops is larger than 25 nH. The loop inductance of the packaged IGBT module itself is about 15nH (in the case of the english flying FS 820). The stray inductance of the inverter loop is large, and the efficiency, the power consumption and other performances of the inverter can be seriously influenced.
Therefore, the above problems are further improved.
Disclosure of Invention
The invention mainly aims to provide an electric power electronic controller based on SIC power semiconductor single-tube parallel connection, which is based on SIC power semiconductor discrete devices, uses the discrete devices to perform single-tube parallel connection, and meets the requirements of inverters for electric automobiles with different powers and current grades.
The invention also aims to provide an electronic power controller based on SIC power semiconductor single-tube parallel connection, which adopts a discrete power device (SIC-based semiconductor) to carry out a discrete device single-tube parallel connection design scheme. The SIC discrete device is used for single-tube parallel design, so that the problem of output power grade limitation of the IGBT packaging module can be effectively solved. SIC discrete devices are connected in parallel through single tubes, the parallel connection number of the discrete devices can be selected according to the specific power requirement of an electric vehicle, the power grade can be continuously expanded, and the requirement of each power grade (60KW-300KW) is met. Meanwhile, the cost of the discrete device scheme is far lower than that of the packaging module scheme. Effectively reduce inverter product cost.
Another object of the present invention is to provide an electronic power controller based on single-tube parallel connection of SIC power semiconductors, which can effectively reduce stray inductance of an inverter circuit to within 10nH by using a scheme of large-area laminated copper bars. The stray inductance of the inverter loop is obviously reduced, the conversion efficiency of the inverter is effectively improved, and the power consumption is reduced.
The invention also aims to provide an electronic power controller based on SIC power semiconductor single tubes in parallel connection, which improves the heat dissipation efficiency of a PEU, improves the integration level of the PEU, has low cost of an inverter, has the overall volume of about 5L and the power density of about 40KW/L, and is superior to similar products in domestic market;
1. the discrete SIC power semiconductors are used for single-tube parallel connection, and the scheme cost is obviously lower than that of a packaging module scheme. The semiconductor packaging module technology has high difficulty, and at present, the number of factories which mature and master the technology is small, so that the price of the packaging module is extremely high. And because the technical threshold of the discrete device is low, the total cost of the power device can be effectively reduced by about 30 percent by using the discrete device.
2. This case uses an integral drive-control PCB circuit board. And integrating the driving circuit board and the control circuit board of the SIC discrete device into a circuit board. Effectively reduces the area of the PCB and reduces the parts such as flat cables, plug-ins and the like used for connecting the circuit board. The size of the inverter is reduced, and the cost is reduced.
3. Parallel cooling water course is used to the present case, and the water course is divided into two by an import, and on independent cooling SIC discrete device simultaneously, the half-bridge down uses high muscle PIN FIN structure, effectively for the power device heat dissipation bottom the discrete device.
The invention also aims to provide an electronic power controller based on SIC power semiconductor single tubes in parallel connection, which uses an integrated filter and simultaneously designs an independent cavity structure to isolate a SIC power device cavity from a filter cavity so as to ensure the filtering effectiveness of the filter. Meanwhile, an insulation shielding structure is designed to isolate the PCBA and the SIC discrete device, so that the electromagnetic interference of the SIC discrete device is reduced to the minimum.
In order to achieve the above purpose, the invention provides an electronic power controller based on parallel connection of SIC power semiconductor single tubes, which comprises a shell, a SIC MOSEFET discrete device assembly, a driving circuit board, a control circuit board, a capacitance module, a filtering module and a water cooling module, wherein the SIC MOSEFET discrete device assembly, the driving circuit board, the control circuit board, the filtering module and the water cooling module are all arranged on the shell, and the SIC MOSEFET discrete device assembly, the driving circuit board, the control circuit board, the filtering module and the water cooling module are all arranged:
the SIC MOSEFET discrete device assembly is respectively connected with the water cooling module, the driving circuit board, the control circuit board and the capacitor module, and the capacitor module is electrically connected with the filtering module;
the SIC MOSEFET discrete device assembly comprises a SIC MOSEFET discrete device full-bridge parallel structure with n1(n1 is 1, 2, 3, 4, 5 …), the SIC MOSEFET discrete device full-bridge parallel structure comprises a SIC MOSEFET discrete device full-bridge structure with n2(n2 is 1, 2, 3, 4, 5 …), and the SIC MOSEFET discrete device full-bridge structure are connected in parallel from structure to electricity.
As a further preferable technical scheme of the technical scheme, the SIC MOSEFET discrete device assembly comprises a U-phase SIC MOSEFET discrete device full-bridge parallel structure, a V-phase SIC MOSEFET discrete device full-bridge parallel structure and a W-phase SIC MOSEFET discrete device full-bridge parallel structure (the number of SIC full-bridge parallel structures can be set according to actual requirements), the U-phase SIC MOSEFET discrete device full-bridge parallel structure, the V-phase SIC MOSEFET discrete device full-bridge parallel structure and the W-phase SIC MOSEFET discrete device full-bridge parallel structure are all provided with three SIC MOSEFET discrete device full-bridge structures (the number of which can be set according to actual requirements) which are arranged side by side (taking U-phase as an example, the three SIC MOSEFET discrete device full-bridge structures U1, U2 and U3 are arranged side by side, and finally are connected in parallel to form an integral U-phase, V-phase and W-phase through U-phase confluence alternating current copper bar terminals to form a similar concept);
preferably, the SIC discrete device single-tube parallel design is adopted, the parallel number of discrete devices can be selected according to the specific power requirement of the matched electric vehicle model, the power grade can be continuously expanded, and the requirement of each power grade (60KW-300KW) is met. As shown in the drawings. The SIC discrete devices are respectively in full bridge 2 and 3 and 4. Theoretically, the number of full-bridge parallel connections has no upper limit (5 and 6 and … …), and the corresponding inverter power levels are freely matched.
By using the single-tube parallel scheme design of the SIC discrete devices, a platformized inverter product can be designed, the power grade can be freely configured and selected according to requirements, and the performance of the SIC power devices can be effectively utilized. The IGBT packaging module is different from the existing IGBT packaging module in capability redundancy or insufficient capability.
The SIC MOSEFET discrete device full-bridge structure comprises a first SIC discrete device and a second SIC discrete device, wherein the first SIC discrete device is electrically connected with the second SIC discrete device (the negative electrode of the first SIC discrete device is electrically connected with the positive electrode of the second SIC discrete device, the connecting end is used as AC output, the first SIC discrete device is used as an upper half bridge, the second SIC discrete device is used as a lower half bridge, and the two discrete devices form a full-bridge structure).
As a further preferable technical solution of the above technical solution, the U-phase SIC mosfet discrete device full-bridge parallel structure further includes a U-phase ac copper bar terminal, and the U-phase ac copper bar terminal is connected with the three SIC mosfet discrete device full-bridge structures arranged side by side, respectively;
the V-phase SIC MOSEFET discrete device full-bridge parallel structure further comprises a V-phase alternating current copper bar terminal, and the V-phase alternating current copper bar terminal is respectively connected with three SIC MOSEFET discrete devices which are arranged side by side in a full-bridge structure;
the W-phase SIC MOSEFET discrete device full-bridge parallel structure further comprises a W-phase alternating current copper bar terminal, and the W-phase alternating current copper bar terminal is connected with three SIC MOSEFET discrete device full-bridge structures arranged side by side respectively.
And the U-shaped alternating current copper bar terminal, the V-shaped alternating current copper bar terminal and the W-shaped alternating current copper bar terminal form an alternating current copper bar.
Preferably, taking a U-phase as an example, the U1 phase, the U2 phase and the U3 phase are subjected to bus connection in parallel through the integral U-phase AC copper bar. The U looks AC copper bar terminal reaches U1 looks, U2 looks and U3 looks distance, effective size, and the resistance equals completely, reaches the effect of flow equalizing. The principle of the V phase is similar to that of the W phase, and the design structurally ensures the static current sharing effect and the dynamic current sharing effect in parallel connection.
As the further preferred technical scheme of above-mentioned technical scheme, the water-cooling module is parallel water course structure, the water-cooling module includes heat dissipation base plate, first radiating FIN (preferably PIN FIN), second radiating FIN (preferably PIN FIN) and water course bottom plate, every SIC MOSEFET discrete device full bridge construction the heat dissipation bottom surface with the heat dissipation base plate is connected, the heat dissipation base plate is kept away from one side of first SIC discrete device is connected with the water course bottom plate through first radiating FIN, the heat dissipation base plate is kept away from one side of second SIC discrete device is connected with the water course bottom plate through second radiating FIN.
Preferably, in order to ensure the parallel current sharing effect of the SIC discrete devices, the upper half-bridge and the lower half-bridge discrete devices in each full bridge are required to be approximately under the same working condition, and a parallel water channel structure is designed. The theory guarantees that the upper half-bridge and the lower half-bridge water channels are independent and the corresponding SIC discrete devices have equal flow velocity, flow and temperature, and guarantees that the upper half-bridge and the lower half-bridge discrete devices have the same water cooling effect inside each full bridge.
The heat dissipation bottom surface of the SIC discrete device is connected with a heat dissipation substrate, and the back of the heat dissipation substrate is designed with a high-strength PIN FIN structure. The heat dissipation substrate material can be selected from heat dissipation materials such as Al, Cu and the like.
As a further preferable technical solution of the above technical solution, the housing (metal structure) includes a SIC mosfet discrete device assembly cavity and a filtering module cavity which are independently arranged, the SIC mosfet discrete device assembly is built in the SIC mosfet discrete device assembly cavity and the filtering module is built in the filtering cavity, and a metal insulating shielding plate is arranged between the driving circuit board and the control circuit board.
The driving circuit board and the control circuit board are designed integrally and are a whole board. The design concept greatly simplifies the circuit structure, simultaneously optimizes the flat cable, flat cable connectors and other parts, improves the structural integration level and reduces the cost. The power density of the inverter is about 40KW/L, and is superior to the level of 20KW/L of the inverter products in the current domestic market.
The inverter shielding structure is characterized in that firstly, a filter cavity and a SIC power device cavity are divided into two independent cavity structures through a metal shell design, and electromagnetic interference caused by high switching frequency of the SIC device is controlled in the SIC power device cavity. A layer of metal insulation shielding plate structure is added in the middle of the control-drive circuit board, and then a metal upper cover plate is matched to form a sealed cavity, so that the circuit board and the SIC power device are divided into similar independent cavities. Electromagnetic interference of SIC power devices is reduced to the maximum extent.
As a further preferred technical scheme of above-mentioned technical scheme, the electric capacity module includes electric capacity main part, electric capacity input copper bar, electric capacity output positive copper bar and electric capacity output negative copper bar, electric capacity input copper bar passes through high-voltage connector and direct current electric connection, electric capacity output positive copper bar with first SIC discrete device electric connection, electric capacity output negative copper bar and (independent) negative copper bar electric connection, the negative copper bar is kept away from the one end of electric capacity output copper bar with second SIC discrete device electric connection.
The direct current is input by a high-voltage connector, is connected with a capacitor interface through a direct current BUSBAR interface, and is connected with a SIC discrete device through an integrated capacitor. The capacitor output positive copper bar is connected with an upper bridge SIC discrete device copper bar terminal, the capacitor output negative copper bar is connected with an independent negative copper bar part, and the area of the negative copper bar covers all SIC power device areas, so that the area is large. The heat dissipation is facilitated, and meanwhile, the stray inductance is also eliminated. The other end of the negative copper bar is connected with a lower bridge SIC discrete device terminal. The current passes through the upper bridge of the SIC discrete device and forms a loop through the cathode copper bar part on the lower bridge after passing through the lower bridge. The present case current loop structure, anodal electric current, the mutual inductance of negative pole electric current offsets each other, does benefit to and reduces whole return circuit stray inductance. The stray inductance of the inverter loop is theoretically controlled within 10 nH.
As a further preferred technical solution of the above technical solution, the housing includes a low voltage signal interface (connecting BMS, VCU and motor rotary transformer, temperature signal), a dc high voltage interface, an ac three-phase motor interface (i.e. ac copper bar, connecting motor three-phase terminal), a cooling water channel water outlet, a cooling water channel water inlet, a pressure balance valve, and a mounting foot (fixing point for fixing the PEU on the electric drive system), wherein:
the direct-current high-voltage interface is connected with a high-voltage connector, and the water outlet of the cooling water channel and the water inlet of the cooling water channel are respectively connected with the water channel bottom plate (connected with a whole vehicle water channel).
The invention has the beneficial effects that: the power electronic controller is used for providing alternating current input for the alternating current motor and controlling the alternating current motor, single tubes are connected in parallel by using the discrete devices based on the SIC-based power semiconductor, the power grade can be continuously expanded, the requirements of inverters for electric automobiles with different power and current grades are met, the product cost of the inverters is effectively reduced, and the domestic blank is filled.
The design of low stray inductance of inverter whole return circuit is realized to the present case, and the inverter is efficient, and the consumption is few. And meanwhile, the heat dissipation efficiency, the integration level and the EMC performance of the inverter are all excellent. The integral volume of the inverter is about 5L, the power density is about 40KW/L, and the inverter is superior to similar products in domestic markets.
Drawings
Fig. 1A is a schematic structural diagram of an electronic power controller based on single-tube parallel connection of SIC power semiconductors according to the present invention.
Fig. 1B is a schematic structural diagram of an electronic power controller based on single SIC power semiconductors in parallel connection.
Fig. 2A is a schematic structural diagram of a SIC mosfet discrete device full-bridge structure of an electronic controller based on SIC power semiconductor single tubes connected in parallel according to the present invention.
Fig. 2B is a schematic structural diagram of a SIC mosfet discrete device full-bridge structure of an electronic controller based on SIC power semiconductor single tubes connected in parallel according to the present invention.
FIG. 2C is a schematic diagram of SIC discrete device structure of an electronic power controller based on SIC power semiconductor single tubes connected in parallel
Fig. 3A is a schematic structural diagram of a full-bridge parallel structure of U-phase SIC mosfet discrete devices of an electronic controller based on SIC power semiconductor single-tube parallel connection (U-phase ac copper bar terminals are hidden).
Fig. 3B is a schematic structural diagram of a SIC mosfet discrete device assembly of an electric controller based on the parallel connection of single SIC power semiconductors (with terminals of each phase of alternating current copper bars hidden).
Fig. 4 is a schematic structural diagram of a SIC MOSEFET discrete device assembly of an electric controller based on SIC power semiconductor single tubes connected in parallel.
Fig. 5A is a schematic structural diagram of a water cooling module of an electronic power controller based on single SIC power semiconductors in parallel connection.
Fig. 5B is a schematic structural diagram of a water cooling module of an electronic power controller based on single SIC power semiconductors in parallel connection.
Fig. 6A is a schematic structural diagram of an electronic power controller based on single-tube parallel connection of SIC power semiconductors according to the present invention.
Fig. 6B is a schematic structural diagram of an electronic power controller based on single SIC power semiconductors in parallel connection.
Fig. 7A is a schematic structural diagram of a SIC mosfet discrete device assembly and a capacitance module of an electronic power controller based on parallel connection of SIC power semiconductor single tubes.
Fig. 7B is a schematic structural diagram of a SIC mosfet discrete device assembly and a capacitance module of an electronic power controller based on parallel connection of SIC power semiconductor single tubes.
The reference numerals include: 10. a housing; 11. a low voltage signal interface; 12. a direct current high voltage interface; 13. an AC three-phase motor interface; 14. a water outlet of the cooling water channel; 15. a water inlet of the cooling water channel; 16. a pressure balancing valve; 17. mounting a foot; 20. a SIC MOSEFET discrete device assembly; 21. the U-phase SIC MOSEFET discrete device is in a full-bridge parallel structure; 22. the V-phase SIC MOSEFET discrete device is in a full-bridge parallel structure; 23. the W-phase SIC MOSEFET discrete device is in a full-bridge parallel structure; 24. a SIC MOSEFET discrete device full-bridge structure; 241. A first SIC discrete device; 242. a second SIC discrete device; 25. a U-shaped alternating current copper bar terminal; 26. A V-shaped alternating current copper bar terminal; 27. w alternating current copper bar terminals; 30. a driving circuit board and a control circuit board; 40. a capacitive module; 41. a capacitor body; 42. a capacitor input copper bar; 43. a capacitor output positive copper bar; 44. a capacitor output negative copper bar; 45. a negative copper bar; 50. a filtering module; 60. a water cooling module; 61. A heat-dissipating substrate; 62. a first heat radiation fin; 63. a second heat radiation fin; 64. a waterway bottom plate; 70. a metal insulating shield plate.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
The invention discloses an electronic power controller based on SIC power semiconductor single tubes in parallel connection, and the specific embodiment of the invention is further described by combining the preferred embodiment.
In the embodiments of the present invention, those skilled in the art will note that the high-voltage connectors, filter modules, circuit boards, etc. related to the present invention can be regarded as the prior art.
PREFERRED EMBODIMENTS
The invention discloses a power electronic controller based on SIC power semiconductor single-tube parallel connection, which comprises a shell 10, a SIC MOSEFET discrete device assembly 20, a driving circuit board, a control circuit board 30 (integrated with the driving circuit board), a capacitance module 41, a filtering module 50 and a water cooling module 60, wherein the SIC MOSEFET discrete device assembly 20, the driving circuit board, the control circuit board, the filtering module 50 and the water cooling module 60 are all arranged on the shell 10, and the power electronic controller comprises:
the SIC mosfet discrete device assembly 20 is respectively connected to the water cooling module 60, the driving circuit board, the control circuit board and the capacitor module 40, and the capacitor module 40 is electrically connected to the filter module 50;
the SIC MOSEFET discrete device 20 assembly comprises a SIC MOSEFET discrete device full-bridge parallel structure with n1(n1 is 1, 2, 3, 4, 5 …), the SIC MOSEFET discrete device full-bridge parallel structure comprises a SIC MOSEFET discrete device full-bridge structure with n2(n2 is 1, 2, 3, 4, 5 …), and the SIC MOSEFET discrete device full-bridge structure are connected in parallel from structure to structure and from electricity.
Preferably, the SIC discrete device single-tube parallel design is adopted, the parallel number of discrete devices can be selected according to the specific power requirement of the matched electric vehicle model, the power grade can be continuously expanded, and the requirement of each power grade (60KW-300KW) is met. As shown in the drawings. The SIC discrete devices are respectively in full bridge 2 and 3 and 4. Theoretically, the number of full-bridge parallel connections has no upper limit (5 and 6 and … …), and the corresponding inverter power levels are freely matched.
By using the single-tube parallel scheme design of the SIC discrete devices, a platformized inverter product can be designed, the power grade can be freely configured and selected according to requirements, and the performance of the SIC power devices can be effectively utilized. The IGBT packaging module is different from the existing IGBT packaging module in capability redundancy or insufficient capability.
Specifically, the SIC mosfet discrete device assembly 20 includes a U-phase SIC mosfet discrete device full-bridge parallel structure 21, a V-phase SIC mosfet discrete device full-bridge parallel structure 22, and a W-phase SIC mosfet discrete device full-bridge parallel structure 23 (the number of SIC full-bridge parallel structures can be set according to actual requirements), where the U-phase SIC mosfet discrete device full-bridge parallel structure 21, the V-phase SIC mosfet discrete device full-bridge parallel structure 22, and the W-phase SIC mosfet discrete device full-bridge parallel structure 23 are all provided with three (the number can be set according to actual requirements) SIC mosfet discrete device full-bridge structures 24 arranged side by side (taking U-phase as an example, three SIC mosfet discrete device full-bridge structures U1, U2, U3 are arranged side by side, and finally connected in parallel through U-phase bus ac copper bar terminals to form an integral U-phase, V-phase, and W-phase concepts are similar);
the SIC MOSEFET discrete device full-bridge structure 24 comprises a first SIC discrete device 241 and a second SIC discrete device 242, wherein the first SIC discrete device 241 and the second SIC discrete device 242 are electrically connected (the negative electrode of the first SIC discrete device is electrically connected with the positive electrode of the second SIC discrete device, the connecting end is used as AC output, the first SIC discrete device is used as an upper half bridge, the second SIC discrete device is used as a lower half bridge, and the two discrete devices form a full-bridge structure).
Fig. 2C is a schematic structural diagram of the first/second SIC discrete devices, which is provided with a drain, a gate and a source, wherein the source of the first SIC discrete device is electrically connected with the drain of the second SIC discrete device, the drain of the first SIC discrete device is used as an anode, and the source of the second SIC discrete device is used as a cathode.
More specifically, the U-phase SIC mosfet discrete device full-bridge parallel structure 21 further includes a U-phase ac copper bar terminal 25, and the U-phase ac copper bar terminal 25 is connected to three SIC mosfet discrete device full-bridge structures 24 arranged side by side respectively;
the V-phase SIC MOSEFET discrete device full-bridge parallel structure 22 further comprises a V-phase alternating current copper bar terminal 26, and the V-phase alternating current copper bar terminal 26 is respectively connected with three SIC MOSEFET discrete device full-bridge structures 24 which are arranged side by side;
the W-phase SIC MOSEFET discrete device full-bridge parallel structure 23 further comprises a W-phase alternating current copper bar terminal 27, and the W-phase alternating current copper bar terminal 27 is respectively connected with three SIC MOSEFET discrete device full-bridge structures 24 which are arranged side by side.
And the U-shaped alternating current copper bar terminal 25, the V-shaped alternating current copper bar terminal 26 and the W-shaped alternating current copper bar terminal 27 form an alternating current copper bar.
Preferably, taking a U-phase as an example, the U1 phase, the U2 phase and the U3 phase are subjected to bus connection in parallel through the integral U-phase AC copper bar. The U looks AC copper bar terminal reaches U1 looks, U2 looks and U3 looks distance, effective size, and the resistance equals completely, reaches the effect of flow equalizing. The principle of the V phase is similar to that of the W phase, and the design structurally ensures the static current sharing effect and the dynamic current sharing effect in parallel connection.
Further, water-cooling module 60 is parallel water channel structure, water-cooling module 60 includes heat dissipation base plate 61, first heat radiation FIN 62 (preferably PIN FIN), second heat radiation FIN 63 (preferably PIN FIN) and water channel bottom plate 64, every SIC MOSEFET discrete device full bridge structure 24 the heat dissipation bottom surface with heat dissipation base plate connects 61, heat dissipation base plate 61 is kept away from one side of first SIC discrete device 241 is connected with water channel bottom plate 64 through first heat radiation FIN 62, heat dissipation base plate 61 is kept away from one side of second SIC discrete device 242 is connected with water channel bottom plate 64 through second heat radiation FIN 63.
Preferably, in order to ensure the parallel current sharing effect of the SIC discrete devices, the upper half-bridge and the lower half-bridge discrete devices in each full bridge are required to be approximately under the same working condition, and a parallel water channel structure is designed. The theory guarantees that the upper half-bridge and the lower half-bridge water channels are independent and the corresponding SIC discrete devices have equal flow velocity, flow and temperature, and guarantees that the upper half-bridge and the lower half-bridge discrete devices have the same water cooling effect inside each full bridge.
The heat dissipation bottom surface of the SIC discrete device is connected with a heat dissipation substrate, and the back of the heat dissipation substrate is designed with a high-strength PIN FIN structure. The heat dissipation substrate material can be selected from heat dissipation materials such as Al, Cu and the like.
Furthermore, the housing 10 (metal structure) includes a SIC mosfet discrete device assembly cavity and a filtering module cavity which are independently arranged, the SIC mosfet discrete device assembly 20 is internally provided with the SIC mosfet discrete device assembly cavity and the filtering module 50 is internally provided with the filtering cavity, and a metal insulation shielding plate 70 is arranged between the driving circuit board and the control circuit board.
The driving circuit board and the control circuit board are designed integrally and are a whole board. The design concept greatly simplifies the circuit structure, simultaneously optimizes the flat cable, flat cable connectors and other parts, improves the structural integration level and reduces the cost. The power density of the inverter is about 40KW/L, and is superior to the level of 20KW/L of the inverter products in the current domestic market.
The inverter shielding structure is characterized in that firstly, a filter cavity and a SIC power device cavity are divided into two independent cavity structures through a metal shell design, and electromagnetic interference caused by high switching frequency of the SIC device is controlled in the SIC power device cavity. A layer of metal insulation shielding plate structure is added in the middle of the control-drive circuit board, and then a metal upper cover plate is matched to form a sealed cavity, so that the circuit board and the SIC power device are divided into similar independent cavities. Electromagnetic interference of SIC power devices is reduced to the maximum extent.
Preferably, the capacitor module 40 includes a capacitor main body 41, a capacitor input copper bar 42, a capacitor output positive copper bar and a capacitor output negative copper bar 44 of 43, the capacitor input copper bar 42 is electrically connected with a direct current through a high-voltage connector, the capacitor output positive copper bar 43 is electrically connected with the first SIC discrete device 241, the capacitor output negative copper bar 44 is electrically connected with an (independent) negative copper bar 45, and the negative copper bar 45 is far away from one end of the capacitor output copper bar 44 and the second SIC discrete device 242.
The direct current is input by a high-voltage connector, is connected with a capacitor interface through a direct current BUSBAR interface, and is connected with a SIC discrete device through an integrated capacitor. The capacitor output positive copper bar is connected with an upper bridge SIC discrete device copper bar terminal, the capacitor output negative copper bar is connected with an independent negative copper bar part, and the area of the negative copper bar covers all SIC power device areas, so that the area is large. The heat dissipation is facilitated, and meanwhile, the stray inductance is also eliminated. The other end of the negative copper bar is connected with a lower bridge SIC discrete device terminal. The current passes through the upper bridge of the SIC discrete device and forms a loop through the cathode copper bar part on the lower bridge after passing through the lower bridge. The present case current loop structure, anodal electric current, the mutual inductance of negative pole electric current offsets each other, does benefit to and reduces whole return circuit stray inductance. The stray inductance of the inverter loop is theoretically controlled within 10 nH.
Preferably, the housing 10 includes a low voltage signal interface 11 (connecting BMS, VCU and motor resolver, temperature signal), a dc high voltage interface 12, an ac three-phase motor interface 13 (i.e. ac copper bar, connecting motor three-phase terminal), a cooling water channel water outlet 14, a cooling water channel water inlet 15, a pressure balance valve 16, and a mounting foot 17 (a fixing point for fixing the PEU on the electric drive system), wherein:
the direct-current high-voltage interface 12 is connected with a high-voltage connector, and the cooling water channel water outlet 14 and the cooling water channel water inlet 15 are respectively connected with the water channel bottom plate 64 (a whole vehicle water channel is communicated).
It should be noted that the technical features of the high-voltage connector, the filter module, the circuit board, and the like, which are referred to in the present patent application, should be regarded as the prior art, and the specific structure, the operation principle, the control manner and the spatial arrangement manner that may be referred to in the present patent application may be implemented by conventional selection in the art, and should not be regarded as the invention point of the present patent, and the present patent is not further specifically described in detail.
It will be apparent to those skilled in the art that modifications and equivalents may be made in the embodiments and/or portions thereof without departing from the spirit and scope of the present invention.

Claims (7)

1. The utility model provides an electric power electronic controller based on SIC power semiconductor single tube is parallelly connected which characterized in that, includes shell, SIC MOSEFET discrete device assembly, drive circuit board, control circuit board, electric capacity module, filtering module and water-cooling module, SIC MOSEFET discrete device assembly drive circuit board control circuit board filtering module with water-cooling module all install in the shell, wherein:
the SIC MOSEFET discrete device assembly is respectively connected with the water cooling module, the driving circuit board, the control circuit board and the capacitor module, and the capacitor module is electrically connected with the filtering module;
SIC MOSEFET discrete device assembly includes that quantity is SIC MOSEFET discrete device full-bridge parallel structure of n1, SIC MOSEFET discrete device full-bridge parallel structure includes that quantity is SIC MOSEFET discrete device full-bridge structure of n2, SIC MOSEFET discrete device full-bridge structure with SIC MOSEFET discrete device full-bridge structure all carries out parallel connection from structure and electric between.
2. The SIC power semiconductor single-tube parallel-based power electronic controller according to claim 1, wherein the SIC MOSEFET discrete device assembly comprises U-phase SIC MOSEFET discrete device full-bridge parallel connection, V-phase SIC MOSEFET discrete device full-bridge parallel connection and W-phase SIC MOSEFET discrete device full-bridge parallel connection, the U-phase SIC MOSEFET discrete device full-bridge parallel connection, the V-phase SIC MOSEFET discrete device full-bridge parallel connection and the W-phase SIC MOSEFET discrete device full-bridge parallel connection are respectively provided with three SIC MOFET discrete device full-bridge structures arranged side by side;
the SIC MOSEFET discrete device full-bridge structure comprises a first SIC discrete device and a second SIC discrete device, and the first SIC discrete device is electrically connected with the second SIC discrete device.
3. The SIC power semiconductor single-tube parallel-based power electronic controller according to claim 2, wherein the U-phase SIC MOSEFET discrete devices are connected in full-bridge parallel connection and further comprise U-phase AC copper bar terminals, and the U-phase AC copper bar terminals are respectively connected with three SIC MOSEFET discrete devices arranged side by side in full-bridge connection;
the V-phase SIC MOSEFET discrete devices are connected in a full-bridge parallel mode and further comprise V-phase alternating current copper bar terminals, and the V-phase alternating current copper bar terminals are respectively connected with three SIC MOSEFET discrete devices which are arranged side by side in a full-bridge structure;
the W-phase SIC MOSEFET discrete devices are connected in a full-bridge parallel mode and further comprise W-phase alternating current copper bar terminals, and the W-phase alternating current copper bar terminals are connected with the three SIC MOSEFET discrete devices which are arranged side by side in a full-bridge structure.
4. The SIC power semiconductor single-tube parallel-connection-based power electronic controller according to claim 3, wherein the water-cooling module is of a parallel water channel structure, the water-cooling module comprises a heat dissipation substrate, first heat dissipation fins, second heat dissipation fins and a water channel bottom plate, the heat dissipation bottom surface of the full-bridge structure of each SIC MOSEFET discrete device is connected with the heat dissipation substrate, one side of the heat dissipation substrate, far away from the first SIC discrete device, is connected with the water channel bottom plate through the first heat dissipation fins, and one side of the heat dissipation substrate, far away from the second SIC discrete device, is connected with the water channel bottom plate through the second heat dissipation fins.
5. The SIC power semiconductor single-tube parallel-based power electronic controller according to claim 4, wherein the housing comprises an SIC MOSEFET discrete device assembly cavity and a filtering module cavity which are independently arranged, the SIC MOSEFET discrete device assembly is arranged in the SIC MOSEFET discrete device assembly cavity, the filtering module is arranged in the filtering cavity, and a metal insulation shielding plate is arranged between the driving circuit board and the control circuit board.
6. The SIC power semiconductor single-tube parallel-based power electronic controller according to claim 5, wherein the capacitance module comprises a capacitance main body, a capacitance input copper bar, a capacitance output positive copper bar and a capacitance output negative copper bar, the capacitance input copper bar is electrically connected with a direct current through a high-voltage connector, the capacitance output positive copper bar is electrically connected with the first SIC discrete device, the capacitance output negative copper bar is electrically connected with the negative copper bar, and one end of the negative copper bar, which is far away from the capacitance output copper bar, is electrically connected with the second SIC discrete device.
7. The SIC power semiconductor single-tube parallel-based power electronic controller according to any one of claims 4-6, wherein the housing comprises a low-voltage signal interface, a direct-current high-voltage interface, an alternating-current three-phase motor interface, a cooling water channel water outlet, a cooling water channel water inlet, a pressure balance valve and a mounting foot, wherein:
the direct-current high-voltage interface is connected with the high-voltage connector, and the water outlet of the cooling water channel and the water inlet of the cooling water channel are respectively connected with the water channel bottom plate.
CN202110623736.4A 2021-06-04 2021-06-04 Power electronic controller based on SIC power semiconductor single tube parallel connection Pending CN113422563A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114867273A (en) * 2022-05-31 2022-08-05 广东美的白色家电技术创新中心有限公司 Power electronic unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114867273A (en) * 2022-05-31 2022-08-05 广东美的白色家电技术创新中心有限公司 Power electronic unit
CN114867273B (en) * 2022-05-31 2024-04-05 广东美的白色家电技术创新中心有限公司 Power electronic unit

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