CN113131765A - H-bridge rapid linear adjustment driving circuit in probe power supply - Google Patents
H-bridge rapid linear adjustment driving circuit in probe power supply Download PDFInfo
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- CN113131765A CN113131765A CN201911420048.7A CN201911420048A CN113131765A CN 113131765 A CN113131765 A CN 113131765A CN 201911420048 A CN201911420048 A CN 201911420048A CN 113131765 A CN113131765 A CN 113131765A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
Abstract
The invention belongs to the technical field of circuit design of a Tokamak device, and particularly relates to a quick linear adjustment driving circuit for an H bridge in a probe power supply, which comprises an output positive and negative direction identification module, an A, B pipe conduction control module, a C, D pipe conduction control module, a A, B pipe conduction interlocking control module and a C, D pipe conduction interlocking control module which are sequentially and electrically connected; the technical problem to be solved by the invention is to provide the fast linear adjustment of the H-bridge in the high-frequency four-quadrant arbitrary waveform output power supply scheme, and simultaneously realize the reliable interlocking of the conduction states of two MOSFET tubes of the same bridge arm, namely only one switch tube is conducted at the same time, so as to avoid output short circuit.
Description
Technical Field
The invention belongs to the technical field of circuit design of a Tokamak device, and particularly relates to a quick linear adjustment driving circuit for an H bridge in a probe power supply.
Background
In a fusion tokamak device, a probe interacts with a plasma to measure a desired parameter, which is one of the basic means of plasma diagnosis.
At present, the main probe theoretical model comprises a single probe, a double probe, a triple probe and the like.
For a single probe, a specific voltage is applied between the probe pair and a reference electrode (usually a conductor with a large contact area with the plasma, such as a device wall, etc.), the current on the probe is detected, and a voltammetry curve is drawn to calculate the parameters of the plasma.
For the double probes, the probe combination is composed of two probes in an integral suspension state, voltage with any waveform is applied between the two probes, the current of the two probes can be detected, and a double-probe volt-ampere characteristic curve is drawn to obtain corresponding electron temperature and electron density.
Due to the complex behavior of the plasma, it is necessary to rapidly scan the entire voltage range and measure the change in current in as short a time as possible. In order to realize high-precision measurement of the plasma state, a curve is accurately drawn near the zero crossing point of a volt-ampere characteristic curve, and smooth transition near the zero crossing point of power supply output is required.
The existing adjustable power supply on the market basically adopts a digital quantity control H bridge inversion mode to output.
Firstly, the digital quantity control mode has low control speed and cannot meet the requirement of high-bandwidth output. Secondly, in order to prevent the upper and lower tubes from being conducted simultaneously in the conventional H-bridge inverter circuit control, a dead zone needs to be arranged in the upper and lower tubes, so that the waveform output cannot be in smooth transition. Also, due to the load characteristics, the device needs to operate in absorption mode, which is not available with other conventional power supplies.
Disclosure of Invention
In view of the above disadvantages, the main object of the present invention is to provide a fast linear adjustment driving circuit for an H-bridge in a probe power supply, which solves the technical problem of providing fast linear adjustment for an H-bridge in a high-frequency four-quadrant arbitrary waveform output power supply scheme, and simultaneously realizes reliable interlocking of conduction states of two MOSFET transistors of the same bridge arm, that is, only one switching transistor is conducted at the same time, so as to avoid output short circuit.
The technical scheme of the invention is as follows:
a fast linear adjustment driving circuit for an H bridge in a probe power supply comprises an output positive and negative direction identification module, an A, B tube conduction control module, a C, D tube conduction control module, a A, B tube conduction interlocking control module and a C, D tube conduction interlocking control module which are sequentially and electrically connected;
the input end of the comparator of the output positive and negative identification module is connected with a given Uref through R10, the positive output end is connected with the input two of the two-input NAND gate of the A, B tube conduction control module, the non output end is connected with the input two of the C, D tube conduction control module and the two-input NAND gate, the in-phase amplifying circuit inlet of the A, B tube conduction control module and the reverse-phase amplifying circuit inlet of the C, D tube conduction control module are connected with PID regulation' -UK through R1; A. the output end of the in-phase amplifying circuit and the two input and non-output ends of the B tube conduction control module are respectively connected with the A, B tube conduction interlocking control module 4 through R5 and the grid electrode of the MOSFET tube M1, and are connected with the cathode of the voltage regulator tube ZD1 and the grid electrode of the M2; C. the output end of the inverting amplifying circuit and the two input and non-output ends of the D tube conduction control module are respectively connected with the C, D tube conduction interlocking control module through R5 and the grid electrode of the MOSFET M3, and are connected with the cathode of ZD1 and the grid electrode of M4.
The output positive and negative direction identification module is composed of a comparator and used for judging the positive and negative of a given Uref and outputting a high and low signal to control the conducted A tube or C tube.
The A, B tube conduction control module consists of an in-phase amplifying circuit and a two-input NAND gate; the input end of the non-inverting amplifier is connected with the UK, and the output end of the non-inverting amplifier is connected with the input end of the two-input NAND gate through the D3 and the R7.
After the power supply is closed, the output dynamic regulation control depends on PID regulation, the '-UK' is the output of the PID, and the GB control H bridge B pipe of the interlocking control module is conducted through the in-phase amplifier by the A, B pipe; and after positive and negative judgment of Uref, the pipe A is controlled by the mutual locking control module through the two-input NAND gate output A, B pipe conduction.
The C, D tube conduction control module consists of an inverting amplifying circuit and a NAND gate; the input end of the inverting amplifier is connected with the UK, and the output end of the inverting amplifier is connected with the input end of the two-input NAND gate through the D3 and the R7.
After the power supply is closed, the output dynamic regulation control depends on PID regulation, the '-UK' is a PID regulation output value of the PID power supply closed loop, and the reverse amplifier is amplified and then communicated with a GB control H bridge D pipe of the interlocking control module through an C, D pipe; and after positive and negative judgment of Uref, the control signal passes through a GC control H bridge C pipe which is communicated with the output of the two input NOT gates through an C, D pipe conduction interlocking control module.
The A, B tube conduction interlocking control module consists of two switch tubes MOSFET-M1 and M2, a conduction resistor and a voltage regulator tube; a source electrode of a switching tube M1 is connected with R3 in series after being connected with C1 in parallel through R4 and then is connected with VCC2, a grid electrode of M1 is connected with R5 and R6, and the drain electrode of M1 outputs GB; the drain electrode of the M2 is connected with an equipotential body ground, and the source electrode of the M2 is connected with the drain electrode of the M1; the anode of the voltage-stabilizing tube ZD1 is output by R9 to obtain GA; when the power-on voltage of the power-on UK is greater than 0 after the power-on UK is amplified by the A, B tube conduction control module, the MOSFET tube M1 is conducted, and the conducting resistor generates enough driving current; when the output of the two input NAND gates of the A, B tube conduction control module is more than 0 after the Uref positive judgment, the H bridge A tube is conducted, the MOSFET tube M2 is conducted, and the H bridge B tube is blocked by pulling down to drive, so that the H bridge circuit is prevented from going up and down, and the A, B tube is prevented from going straight through.
The C, D tube conduction interlocking control module consists of two switching tubes MOSFET-M3 and M4, a conduction resistor and a voltage regulator tube; a source electrode of a switching tube M3 is connected with R3 in series after being connected with C1 in parallel through R4 and then is connected with VCC2, a grid electrode of M3 is connected with R5 and R6, and a drain electrode of M3 outputs GD; the drain electrode of the M4 is connected with an equipotential body ground, and the source electrode of the M4 is connected with the drain electrode of the M3; the anode of the voltage-stabilizing tube ZD1 is output through R9 to obtain a GC-controlled H bridge C tube; when the power-on voltage of the power-on UK is greater than 0 after the power-on UK is amplified by the C, D tube conduction control module, the MOSFET tube M3 is conducted, and the conducting resistor generates enough driving current; when the output of the two input NAND gates of the C, D tube conduction control module is more than 0 after negative judgment of Uref, the H bridge C tube is conducted, the MOSFET tube M4 is conducted, and the H bridge D tube is blocked by pulling down to drive, so that the H bridge circuit is prevented from going up and down, and the C, D tube is prevented from going straight through.
The invention has the beneficial effects that:
output arbitrary waveform, high bandwidth, output smooth transition of zero crossing point, avoided the problem of dead zone near traditional H bridge power output waveform zero crossing point, and then reach steady switching between energy absorption and output.
Drawings
FIG. 1 is a rear stage H-bridge circuit of the present invention;
fig. 2 is a high-speed linear regulation driving circuit of a rear-stage H-bridge of the invention.
In the figure: 1. a positive and negative direction identification module is output; 2. a, B a tube conduction control module; 3. c, D a tube conduction control module; 4. a, B pipe conduction interlocking control module; 5. c, D the tube leads through the interlock control module.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
A quick linear adjustment driving circuit of an H bridge in a probe power supply comprises an output positive and negative identification module 1, an A, B tube conduction control module 2, a C, D tube conduction control module 3, a A, B tube conduction interlocking control module 4 and a C, D tube conduction interlocking control module 5 which are sequentially and electrically connected.
The input end of the comparator of the output positive and negative identification module 1 is connected with a given Uref through R10, the positive output end is connected with the input two of the two-input NAND gate of the A, B tube conduction control module 2, the negative output end is connected with the input two of the two-input NAND gate of the C, D tube conduction control module 3, the in-phase amplifying circuit inlet of the A, B tube conduction control module 2 and the reverse-phase amplifying circuit inlet of the C, D tube conduction control module 3 are connected with PID adjustment' -UK through R1. A. The output end and the two input and non-output ends of the in-phase amplifying circuit of the B tube conduction control module 2 are respectively connected with the A, B tube conduction interlocking control module 4 through the R5 and the grid electrode of the MOSFET tube M1, and are connected with the cathode of the voltage regulator tube ZD1 and the grid electrode of the M2. C. The output of the inverting amplifying circuit and the two input and non-output ends of the D tube conduction control module 3 are respectively connected with the C, D tube conduction interlocking control module 5 through R5 and the grid electrode of the MOSFET M3, and are connected with the cathode of ZD1 and the grid electrode of M4.
The output positive and negative direction identification module 1 is composed of a comparator and used for judging the positive and negative of a given Uref and outputting a high and low signal to control the conducted A tube or C tube.
The A, B tube conduction control module 2 consists of a non-inverting amplifier circuit and a two-input nand gate. The input end of the non-inverting amplifier is connected with the UK, and the output end of the non-inverting amplifier is connected with the input end of the two-input NAND gate through the D3 and the R7. After the power supply is closed, the output dynamic regulation control depends on PID regulation, the '-UK' is the output of the PID, and the H bridge B tube is controlled by the GB of the in-phase amplifier through the A, B tube conduction interlocking control module 4. And after positive and negative judgment of Uref, the interlocking control module 4 is conducted through a two-input NAND gate output A, B tube and controls the tube A through GA.
The C, D tube conduction control module 3 is composed of an inverting amplifying circuit and a NAND gate. The input end of the inverting amplifier is connected with the UK, and the output end of the inverting amplifier is connected with the input end of the two-input NAND gate through the D3 and the R7. After the power supply is closed, the output dynamic regulation control depends on PID regulation, the '-UK' is a PID regulation output value of the PID power supply closed loop, and the reverse amplifier is amplified and then communicated with a GB control H bridge D tube of the interlocking control module 5 through an C, D tube. And after positive and negative judgment of Uref, the control signal is conducted with the output of the two input NOT gates through the C, D tube to control the C tube of the H bridge through the GC of the interlocking control module 5.
The A, B tube conduction interlocking control module 4 is composed of two switch tubes MOSFET-M1 and M2, a conduction resistor and a voltage regulator tube. The source of the switching tube M1 is connected in parallel with R3 through R4 and C1 and then connected in series with VCC2, the grid of M1 is connected with R5 and R6, and the drain output of M1 obtains GB. The drain electrode of the M2 is connected with an equipotential body ground, and the source electrode of the M2 is connected with the drain electrode of the M1; and the anode of the voltage-regulator tube ZD1 is output by R9 to obtain GA. When the power-on voltage of the power-on UK is greater than 0 after the power-on voltage is amplified by the A, B transistor conduction control module 2, the MOSFET transistor M1 is turned on, and the on-resistance generates enough driving current. When the output of the two input nand gates of the A, B tube conduction control module 2 is more than 0 after the Uref is judged, the H bridge A tube is conducted, the MOSFET tube M2 is conducted, and the H bridge B tube is blocked by pulling down to drive, so that the H bridge circuit is prevented from going up and down, and the A, B tube is prevented from going straight through.
The C, D tube conduction interlocking control module 5 is composed of two switch tubes MOSFET-M3 and M4, a conduction resistor and a voltage regulator tube. The source of the switching tube M3 is connected in parallel with R3 and then connected with VCC2 after being connected with C1 through R4, the grid of M3 is connected with R5 and R6, and the drain of M3 outputs GD. The drain electrode of the M4 is connected with an equipotential body ground, and the source electrode of the M4 is connected with the drain electrode of the M3; and the anode of the voltage-stabilizing tube ZD1 is output through R9 to obtain a GC-controlled H bridge C tube. When the power-on voltage of the power-on UK is greater than 0 after the power-on voltage is amplified by the C, D transistor conduction control module 3, the MOSFET transistor M3 is turned on, and the on-resistance generates enough driving current. When the output of the two-input NAND gate of the C, D tube conducting control module 3 is greater than 0 after negative judgment of Uref, the H bridge C tube is conducted, the MOSFET tube M4 is conducted, and the H bridge D tube is blocked by pulling down to drive, so that the upper tube and the lower tube (C, D) of the H bridge circuit are prevented from being directly communicated.
The specific working mode of the power supply H-bridge circuit is as follows:
when the power supply works in the first quadrant and the third quadrant, two switching tubes (a tube A and a tube C of a bridge arm) on the H-bridge circuit are determined to work in an on state or an off state only by the polarity of a given voltage value; two switching tubes (a bridge arm B tube and a bridge arm D tube) below the H-bridge circuit work in a high-speed bidirectional linear regulation state according to the value of the feedback control voltage UK.
When the H-bridge circuit works in the second quadrant and the fourth quadrant, namely in an absorption mode, two switching tubes on the H-bridge circuit determine whether to work in an on state or not according to the polarity of a given voltage value, and the switched-off switching tube state is interlocked with the state of the other switching tube in the same bridge arm at the same time (the tube A of the bridge arm is not conducted with the tube B of the bridge arm at the same time; two switching tubes (a bridge arm B tube and a bridge arm D tube) below the H-bridge circuit work in a high-speed bidirectional chopping state according to the value of the feedback control voltage UK.
When Uref >0, the power supply needs to output in the forward direction, PID regulates "-UK" < 0. Then:
i) the Ugs of the MOSFET M1 is <0, and M1 is non-conductive. Meanwhile, since Uref >0, the ungated and NAND gate processes, the Ugs >0 of the MOSFET transistor M2, and the M2 is conducted. At this point the GA is high while the GB is pulled low. Therefore, the tube A and the tube B of the main circuit H bridge are conducted and not conducted.
ii) Ugs >0 for MOSFET transistor M3, M3 is on, when GD is high. Meanwhile, as Uref >0, the Ugs of the MOSFET tube M4 is less than 0 and M4 is not conducted through NOT gate and NAND gate processing, and GC is low at the moment. Therefore, the D tube of the H bridge of the main circuit is conducted, and the C tube is not conducted. When Uref <0, the power supply needs to output in the negative direction, and PID regulates '-UK' > 0. Then:
i) the Ugs of the MOSFET M1 is >0 and M1 is conductive. Meanwhile, as Uref <0, the ungated and NAND gate processes, the Ugs of the MOSFET tube M2 is <0, and the M2 is not conducted. At this point GA is low while GB is low. Therefore, the tube A and the tube B of the H bridge of the main circuit are not conducted.
ii) the Ugs of MOSFET transistor M3 is <0, M3 is non-conducting, with GD low. Meanwhile, as Uref <0, through the processing of NOT gate and NAND gate, the Ugs of the MOSFET tube M4 is greater than 0, and M4 is conducted, and GC is high at the moment. Therefore, the tube D of the H bridge of the main circuit is not conducted, and the tube C is conducted.
Considering the inconsistency of the minimum driving voltages of the small-power MOSFET and the main-power MOSFET, when the minimum driving voltage of the main-power MOSFET is smaller than that of the small-power MOSFET, the two main-power MOSFETs of the same bridge arm may be directly connected. And the voltage regulator tube ZD1 can solve the problem well.
The effect of R3, R4 and C1 in fig. 2 is to make the low power MOSFET M1/M3 generate a large on current in a short time, and the steady state current can be clamped at a low level. The small power MOSFET M1/M3 generates a larger conducting current to facilitate the fast conduction of the main power switch tube, but it must be noted that the small power MOSFET M1 and M2, M3 and M4 are in a through condition, so that the small power MOSFET can be burnt by a continuous large current. The larger transient on current is mainly generated by R3, while the smaller steady state current is mainly clamped by R4.
Note that in order not to let R4 affect the drive current, it is necessary to make the time constant of R4 and C1 much longer than the time during which the drive voltage is generated.
Claims (8)
1. A fast linear adjustment driving circuit for an H bridge in a probe power supply comprises an output positive and negative direction identification module, an A, B tube conduction control module, a C, D tube conduction control module, a A, B tube conduction interlocking control module and a C, D tube conduction interlocking control module which are sequentially and electrically connected;
the method is characterized in that: the input end of the comparator of the output positive and negative identification module is connected with a given Uref through R10, the positive output end is connected with the input two of the two-input NAND gate of the A, B tube conduction control module, the non output end is connected with the input two of the C, D tube conduction control module and the two-input NAND gate, the in-phase amplifying circuit inlet of the A, B tube conduction control module and the reverse-phase amplifying circuit inlet of the C, D tube conduction control module are connected with PID regulation' -UK through R1; A. the output end of the in-phase amplifying circuit and the two input and non-output ends of the B tube conduction control module are respectively connected with the A, B tube conduction interlocking control module 4 through R5 and the grid electrode of the MOSFET tube M1, and are connected with the cathode of the voltage regulator tube ZD1 and the grid electrode of the M2; C. the output end of the inverting amplifying circuit and the two input and non-output ends of the D tube conduction control module are respectively connected with the C, D tube conduction interlocking control module through R5 and the grid electrode of the MOSFET M3, and are connected with the cathode of ZD1 and the grid electrode of M4.
2. The fast linear adjustment driving circuit for H-bridge in probe power supply according to claim 1, wherein: the output positive and negative direction identification module is composed of a comparator and used for judging the positive and negative of a given Uref and outputting a high and low signal to control the conducted A tube or C tube.
3. The fast linear adjustment driving circuit for H-bridge in probe power supply according to claim 1, wherein: the A, B tube conduction control module consists of an in-phase amplifying circuit and a two-input NAND gate; the input end of the non-inverting amplifier is connected with the UK, and the output end of the non-inverting amplifier is connected with the input end of the two-input NAND gate through the D3 and the R7.
4. The fast linear adjustment driving circuit for H-bridge in probe power supply according to claim 2, wherein: after the power supply is closed, the output dynamic regulation control depends on PID regulation, the '-UK' is the output of the PID, and the GB control H bridge B pipe of the interlocking control module is conducted through the in-phase amplifier by the A, B pipe; and after positive and negative judgment of Uref, the pipe A is controlled by the mutual locking control module through the two-input NAND gate output A, B pipe conduction.
5. The fast linear adjustment driving circuit for H-bridge in probe power supply according to claim 1, wherein: the C, D tube conduction control module consists of an inverting amplifying circuit and a NAND gate; the input end of the inverting amplifier is connected with the UK, and the output end of the inverting amplifier is connected with the input end of the two-input NAND gate through the D3 and the R7.
6. The fast linear adjustment driving circuit for H-bridge in probe power supply according to claim 5, wherein: after the power supply is closed, the output dynamic regulation control depends on PID regulation, the '-UK' is a PID regulation output value of the PID power supply closed loop, and the reverse amplifier is amplified and then communicated with a GB control H bridge D pipe of the interlocking control module through an C, D pipe; and after positive and negative judgment of Uref, the control signal passes through a GC control H bridge C pipe which is communicated with the output of the two input NOT gates through an C, D pipe conduction interlocking control module.
7. The fast linear adjustment driving circuit for H-bridge in probe power supply according to claim 1, wherein: the A, B tube conduction interlocking control module consists of two switch tubes MOSFET-M1 and M2, a conduction resistor and a voltage regulator tube; a source electrode of a switching tube M1 is connected with R3 in series after being connected with C1 in parallel through R4 and then is connected with VCC2, a grid electrode of M1 is connected with R5 and R6, and the drain electrode of M1 outputs GB; the drain electrode of the M2 is connected with an equipotential body ground, and the source electrode of the M2 is connected with the drain electrode of the M1; the anode of the voltage-stabilizing tube ZD1 is output by R9 to obtain GA; when the power-on voltage of the power-on UK is greater than 0 after the power-on UK is amplified by the A, B tube conduction control module, the MOSFET tube M1 is conducted, and the conducting resistor generates enough driving current; when the output of the two input NAND gates of the A, B tube conduction control module is more than 0 after the Uref positive judgment, the H bridge A tube is conducted, the MOSFET tube M2 is conducted, and the H bridge B tube is blocked by pulling down to drive, so that the H bridge circuit is prevented from going up and down, and the A, B tube is prevented from going straight through.
8. The fast linear adjustment driving circuit for H-bridge in probe power supply according to claim 1, wherein: the C, D tube conduction interlocking control module consists of two switching tubes MOSFET-M3 and M4, a conduction resistor and a voltage regulator tube; a source electrode of a switching tube M3 is connected with R3 in series after being connected with C1 in parallel through R4 and then is connected with VCC2, a grid electrode of M3 is connected with R5 and R6, and a drain electrode of M3 outputs GD; the drain electrode of the M4 is connected with an equipotential body ground, and the source electrode of the M4 is connected with the drain electrode of the M3; the anode of the voltage-stabilizing tube ZD1 is output through R9 to obtain a GC-controlled H bridge C tube; when the power-on voltage of the power-on UK is greater than 0 after the power-on UK is amplified by the C, D tube conduction control module, the MOSFET tube M3 is conducted, and the conducting resistor generates enough driving current; when the output of the two input NAND gates of the C, D tube conduction control module is more than 0 after negative judgment of Uref, the H bridge C tube is conducted, the MOSFET tube M4 is conducted, and the H bridge D tube is blocked by pulling down to drive, so that the H bridge circuit is prevented from going up and down, and the C, D tube is prevented from going straight through.
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| WO2015101164A1 (en) * | 2014-01-03 | 2015-07-09 | 国家电网公司 | Single-phase inverter test circuit for modular multi-level convertor and test method therefor |
| US20160049857A1 (en) * | 2014-08-12 | 2016-02-18 | Yiqiang Jake Zhang | Active switching rectifier employing mosfet and current-based control using a hall-effect switch |
| CN106253719A (en) * | 2016-08-06 | 2016-12-21 | 刘超 | A kind of load power source control circuit and device |
| CN211321234U (en) * | 2019-12-31 | 2020-08-21 | 核工业西南物理研究院 | H-bridge rapid linear adjustment driving circuit in probe power supply |
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