CN113125520A - MoS2PEO humidity sensor, double-device humidity sensing device and humidity detection method - Google Patents
MoS2PEO humidity sensor, double-device humidity sensing device and humidity detection method Download PDFInfo
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- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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Abstract
The invention discloses a MoS2PEO humidity sensor, double-device humidity sensing device and humidity detection method, MoS2the/PEO humidity sensor comprises an electrode, the surface of which is covered with MoS2Composite gas-sensitive film formed of/PEO composite material, in which MoS2Is P type MoS2And PEO and MoS2The mass ratio of (A) to (B) is 1: 1-1: 10. The dual-device humidity sensing device comprises a MoS2Humidity sensor and MoS of the invention2a/PEO humidity sensor. The humidity detection method adopts the dual-device humidity sensing device to detect the humidity of the target gas according to MoS2The response value of the/PEO humidity sensor calculates the humidity value of the target gas. The resistance value of the invention is monotonously changed in a larger humidity range (10% RH-60% RH), thereby having good humidity detection capability, expanding the application range and simultaneously being capable of detecting whether the target gas contains water vapor or not.
Description
Technical Field
The invention relates to the technical field of humidity detection, in particular to a humidity sensor and a humidity detection method.
Background
The humidity sensor has wide application in the fields of semiconductors, automobiles, environmental control, agriculture, biotechnology and the like, and therefore has great practical significance for accurate detection of humidity.
Two-dimensional semiconductor material molybdenum disulfide (MoS)2) The nano material is considered to be a high-efficiency humidity sensitive nano material due to the large specific surface area, high carrier mobility and low noise level. MoS because of the differences in preparation and surface defects2Has two existing forms of P-type and N-type semiconductors. Currently, MoS for making humidity sensors2Mostly N type MoS2Based on P-type MoS2The humidity sensor of (2) has been very rarely studied. The main reason is based on P type MoS2When the humidity sensor detects the humidity, the MoS absorbing water molecules is increased along with the increase of the humidity2Can exhibit non-monotonic variation in resistance, i.e., MoS2The humidity sensor resistance showed an increase in the low humidity range (10% RH-30% RH) and a decrease in the high humidity range (30% RH-60% RH), which clearly greatly limited the MoS2The method is applied to the field of resistance type humidity sensors.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present invention provides a MoS device with good detection stability, in which the resistance values within a relatively large humidity range (10% RH-60% RH) are monotonically varied, thereby increasing the detection humidity range2a/PEO humidity sensor.
In order to solve the technical problems, the technical scheme of the invention is as follows:
MoS2A/PEO humidity sensor comprises an electrode covered with MoS2Composite gas-sensitive film formed of/PEO composite material, in which MoS2Is P type MoS2And PEO and MoS2The mass ratio of (A) to (B) is 1: 1-1: 10.
Thus, the device is provided withIn the scheme, P-type MoS is innovatively combined2Binding to PEO, MoS type P2Because the action of sulfur vacancy and oxygen adsorption can present the behavior of a P-type semiconductor, for the adsorption of a small amount of reductive water molecules, the situation that the resistance is increased can be presented, and after the humidity is increased, MoS is generated along with the increase of the water molecules adsorbed on the surface2A continuous water film is formed on the surface, so that proton conduction occurs, and the overall resistance is reduced; since PEO is an ion conductive polymer, the PEO is insulating in a dry environment, and the conductivity is greatly enhanced in a wet environment, namely the resistance value is greatly reduced, so that MoS2/PEO composite gas-sensitive film is used for forming a humidity sensor, and MoS is absorbed by water molecules2The contribution of the composition and the PEO composition to the resistance value of the humidity sensor was to increase and decrease the resistance, respectively, by combining PEO and MoS2The mass ratio of the water molecules to the water molecules is controlled to be 1: 1-1: 10, so that the resistance values of the prepared humidity sensor after adsorbing the water molecules all tend to be reduced, and the resistance values of the prepared humidity sensor in a large humidity range (10% RH-60% RH) all change monotonously, and the humidity detection range is greatly improved; simultaneously, by mixing PEO with MoS2Binding can also reduce oxygen adsorption to MoS2Thereby improving the stability of the detection of the humidity sensor.
Preferably, MoS2the/PEO humidity sensor is manufactured by adopting the following method:
step 1) carrying out P-type MoS by a sound wave ultrasonic method2Uniformly dispersing PEO in absolute ethyl alcohol to form a uniformly dispersed solution, and then carrying out ultrasonic compounding on the uniformly dispersed solution with set mass to prepare MoS2A PEO composite solution;
step 2) MoS obtained in step 1)2Spraying a/PEO composite material solution on the surface of the electrode to form a composite gas-sensitive film, and then carrying out vacuum drying treatment on the electrode with the composite gas-sensitive film to prepare MoS2a/PEO humidity sensor.
Preferably, the electrodes are interdigitated electrodes.
Preferably, PEO is reacted with MoS2In a mass ratio of1:1。
Preferably, the thickness of the composite gas-sensitive film is 50nm-1 μm.
In addition, the invention also provides a double-device humidity sensing device to solve the problem that whether the detection target gas contains water vapor or not is difficult to distinguish.
A dual device humidity sensor includes a MoS2Humidity sensor and MoS as described above in the present invention2a/PEO humidity sensor.
Thus, in MoS2Humidity sensor and MoS2In the case of simultaneous operation of the two devices of the/PEO humidity sensor, when exposed to unknown gases, only MoS is required2The resistance value of the humidity sensor rises and MoS is simultaneously performed2When the resistance value of the/PEO humidity sensor is reduced, the unknown gas is low-humidity water vapor, and other gases do not have the phenomenon.
The working principle of the device is as follows: PEO is an ion-conductive polymer, which is insulating in a dry environment, and has greatly increased conductivity in a wet environment, i.e., a greatly decreased resistance value; MoS adopted in the present application2The material of the humidity sensor is in a P-type semiconductor property and meets reductive H2The resistance value is increased when O molecules exist; for MoS2PEO humidity sensor in adsorbing H2In the case of O molecule, MoS2The contribution of the composition and the PEO composition to the resistance value of the device was increasing resistance and decreasing resistance, respectively; in PEO and MoS2The mass ratio of (A) to (B) is 1: 1-1: 102PEO humidity sensor in adsorption of H2The resistance values decreased after the O molecules, and it was concluded that PEO contributed much more to the resistance change than MoS2. Therefore, a mode in which two devices operate simultaneously can be adopted, and if the above conditions are met according to the trend of the change of the respective resistance values, the detection target gas is low-humidity water vapor, and other gases have no rule. Therefore, the problem that whether the detection target gas contains water vapor or not is difficult to distinguish in the prior art is solved.
Preferably, the test kit further comprises a MoS2PEO humidity sensor and MoS2The humidity sensors are arranged in the test cavities of the test boxes side by side, and both ends of the test boxes are provided withA vent hole communicated with the test cavity is arranged; one side of the test box is provided with a data acquisition interface, MoS2PEO humidity sensor and MoS2And the signal output ends of the humidity sensors are respectively connected to the data acquisition interfaces.
Thus, when the target gas is detected, the target gas is introduced into the test box, and the MoS of the target gas introduced into the test box is respectively detected2PEO humidity sensor and MoS2The humidity sensor reacts and allows MoS2PEO humidity sensor and MoS2Change in resistance value of humidity sensor, MoS2PEO humidity sensor and MoS2The resistance change condition of the humidity sensor is transmitted to an external data acquisition system through a data acquisition interface and is transmitted to the external data acquisition system through the MoS2PEO humidity sensor and MoS2The change of the resistance value of the humidity sensor is analyzed to determine whether the target gas contains water vapor or not, and then MoS is used2the/PEO sensor resistance change was analyzed for humidity change in a low humidity background. In particular if MoS2The resistance of the humidity sensor becomes large, and MoS2If the resistance value of the/PEO humidity sensor becomes smaller, the target gas is judged to contain water vapor, otherwise, the target gas does not contain water vapor.
Preferably, MoS2The composite gas-sensitive film on the/PEO humidity sensor adopts MoS2Preparing a/PEO composite material solution; MoS2MoS is adopted as a gas-sensitive film on a humidity sensor2Prepared from a solution and MoS2MoS in solution2Mass volume fraction of (2) is equal to MoS2MoS in/PEO composite solution2Mass volume fraction of (a); MoS2PEO and MoS in/PEO composite solution2The mass ratio of (A) to (B) is 1: 1-1: 10.
The invention also provides a humidity detection method, and the double-device humidity sensing device adopted by the invention comprises the following steps:
step 1: obtaining MoS2Humidity sensor and MoS2Initial resistance value of the/PEO humidity sensor;
step 2: introducing target gas to make the target gas act on MoS2Humidity sensor and MoS2A PEO humidity sensor;
and step 3: simultaneous acquisition of MoS2Humidity sensor and MoS2The stable resistance value of the PEO humidity sensor under the action of target gas;
and 4, step 4: calculating a formula according to the response value: (R-R)0)/R0Separately calculate MoS2Humidity sensor and MoS2Response values for the/PEO humidity sensor;
and 5: if MoS2The humidity sensor is positive-responding, and MoS2If the/PEO humidity sensor has negative response, the water vapor in the target gas is judged to be contained.
Preferably, the following steps are further performed after step 5:
step 6: according to MoS2The response value of the/PEO humidity sensor calculates the humidity value of the target gas.
Compared with the prior art, the invention has the following beneficial effects:
1. in the scheme, P-type MoS is innovatively combined2The prepared humidity sensor can make the resistance values of the humidity sensor show a descending trend after the humidity sensor absorbs water molecules by combining with PEO, so that the resistance values of the humidity sensor prepared by the scheme all show monotonous change within a larger humidity range (10% RH-60% RH), and the humidity detection range is greatly improved; simultaneously, by mixing PEO with MoS2Binding can also reduce oxygen adsorption to MoS2Thereby improving the stability of the detection of the humidity sensor.
2. In the dual device humidity sensing apparatus of the present invention, MoS2The humidity sensor exhibits a positive response to low humidity water vapor, whereas MoS2the/PEO humidity sensor shows a negative response, so that the low-humidity water vapor in the target gas can be uniquely determined by responding to the phenomenon of opposite polarity, namely, the phenomenon of opposite polarity of response is not shown for other gases.
3. The humidity detection method can eliminate the interference of reducing gases except water vapor and accurately determine whether the target gas contains low-humidity water vapor.
4. Due to MoS2The PEO humidity sensor generates obvious response change to weak humidity change in a humidity range, so that specific humidity value can be correspondingly calculated according to different response sizes.
Drawings
FIG. 1 is a MoS2SEM surface topography of the humidity sensor;
FIG. 2 is a MoS2SEM surface topography of/PEO humidity sensor;
FIG. 3 is a schematic diagram of a humidity detection system;
FIG. 4 is a PEO humidity sensor, MoS2Humidity sensor and MoS2A resistance real-time change graph of the PEO humidity sensor under different humidities;
FIG. 5 is a MoS2Humidity sensor and MoS2Response of the/PEO humidity sensor in real time changes under different humidities.
Description of reference numerals: test box 1, data acquisition system 2.
Detailed Description
MoS2A/PEO humidity sensor comprises an electrode covered with MoS2Composite gas-sensitive film formed of/PEO composite material, in which MoS2Is P type MoS2And PEO and MoS2The mass ratio of (A) to (B) is 1: 1-1: 10.
Thus, in the scheme, the P-type MoS is innovatively combined2Binding to PEO, MoS type P2Because the action of sulfur vacancy and oxygen adsorption can present the behavior of a P-type semiconductor, for the adsorption of a small amount of reductive water molecules, the situation that the resistance is increased can be presented, and after the humidity is increased, MoS is generated along with the increase of the water molecules adsorbed on the surface2A continuous water film is formed on the surface, so that proton conduction occurs, and the overall resistance is reduced; since PEO is an ion-conductive polymer, it is insulating in a dry environment and has a greatly increased conductivity in a wet environment, that is, its resistance value is greatly reduced, and thus MoS is used2For a humidity sensor formed by a/PEO composite gas-sensitive film, MoS is used for adsorbing water molecules2Composition and PEO composition to resistance value of humidity sensorContributions are made to increasing and decreasing resistance, respectively, by adding PEO and MoS2The mass ratio of the water molecules to the water molecules is controlled to be 1: 1-1: 10, so that the resistance values of the prepared humidity sensor after adsorbing the water molecules all tend to be reduced, and the resistance values of the prepared humidity sensor in a large humidity range (10% RH-60% RH) all change monotonously, and the humidity detection range is greatly improved; simultaneously, by mixing PEO with MoS2Binding can also reduce oxygen adsorption to MoS2Thereby improving the stability of the detection of the humidity sensor.
In this embodiment, MoS2the/PEO humidity sensor is manufactured by adopting the following method:
step 1) adopting a solution method to treat P-type MoS by sound wave ultrasound (120min)2Uniformly dispersing (molybdenum disulfide) and PEO (polyethylene oxide) in absolute ethyl alcohol to form a uniformly dispersed solution, and then taking MoS with set mass2Ultrasonic compounding (120min) of PEO homodisperse solution to prepare MoS2A PEO composite solution; the ultrasonic frequency is 20kHz-23 kHz.
Step 2) adopting a gas spraying method to carry out MoS obtained in the step 1)2The PEO composite material solution is sprayed on the surface of an electrode to form a composite gas-sensitive film with the film thickness of 50nm-1 mu m, and then the electrode with the composite gas-sensitive film is subjected to vacuum drying treatment (at 40 ℃) for 2 hours to prepare MoS2a/PEO humidity sensor.
Similarly, MoS can be prepared by adopting the steps2Humidity sensor, co-located MoS2At a concentration of MoS2And MoS2The mass volume fractions of the solution of the/PEO composite material are equal and are all 0.01-10 mg/ml; and PEO and MoS in the composite solution2The mass ratio of (A) to (B) is 1: 1-1: 10.
Wherein, MoS2Humidity sensor and MoS2The SEM surface topography of the/PEO humidity sensor is respectively shown in figures 1 and 2, and the two-dimensional MoS in a sheet shape is shown in figure 12Relatively tightly covers the surface of the interdigital electrode, MoS in figure 22the/PEO composite material is loosely covered on the surface of the interdigital electrode, MoS2Interaction with PEOAnd the agglomeration of the other part is restricted, so that a loose porous structure is formed, more adsorption sites are exposed, the response performance is improved, particularly the response performance of the PEO component is improved, and the contribution of the PEO component to the response polarity is dominant.
In this embodiment, the electrodes are interdigitated electrodes.
In this example, PEO and MoS2The mass ratio of (A) to (B) is 1: 1.
In this embodiment, the thickness of the composite gas-sensitive film is 50nm to 1 μm.
As shown in FIG. 3, a humidity detection system comprises a data acquisition system 2 and a dual device humidity sensing device, wherein the dual device humidity sensing device comprises a MoS2Humidity sensor and MoS as described above in the present invention2a/PEO humidity sensor.
Thus, in MoS2Humidity sensor and MoS2In the case of simultaneous operation of the two devices of the/PEO humidity sensor, when exposed to unknown gases, only MoS is required2The resistance value of the humidity sensor rises and MoS is simultaneously performed2When the resistance value of the/PEO humidity sensor is reduced, the unknown gas is low-humidity water vapor, and other gases do not have the phenomenon.
The working principle of the device is as follows: PEO is an ion-conductive polymer, which is insulating in a dry environment, and has greatly increased conductivity in a wet environment, i.e., a greatly decreased resistance value; MoS adopted in the present application2The material of the humidity sensor is in a P-type semiconductor property and meets reductive H2The resistance value is increased when O molecules exist; for MoS2PEO humidity sensor in adsorbing H2In the case of O molecule, MoS2The contribution of the composition and the PEO composition to the resistance value of the device was increasing resistance and decreasing resistance, respectively; in PEO and MoS2The mass ratio of (A) to (B) is 1: 1-1: 102PEO humidity sensor in adsorption of H2The resistance values decreased after the O molecules, and it was concluded that PEO contributed much more to the resistance change than MoS2. Therefore, a mode of simultaneous operation of two devices can be adopted, and according to the trend of the change of the respective resistance values, if the above situation is met, the detection target gas is the low-humidity water vaporGas, other gases have no such laws. Therefore, the problem that whether the detection target gas contains water vapor or not is difficult to distinguish in the prior art is solved.
In the present embodiment, a test cartridge 1, MoS is further included2PEO humidity sensor and MoS2The humidity sensors are arranged in the test cavity of the test box 1 side by side, and both ends of the test box 1 are provided with vent holes communicated with the test cavity; one side of the test box 1 is provided with a data acquisition interface, MoS2PEO humidity sensor and MoS2The signal output ends of the humidity sensors are respectively connected to the data acquisition interfaces, and the data acquisition interfaces are also connected with the data acquisition system 2. In this embodiment, Keithley2700 (a multi-channel acquisition system capable of acquiring multiple sets of data simultaneously) is adopted as the data acquisition system to simultaneously perform the MoS2Humidity sensor and MoS2The resistance value of the/PEO humidity sensor is collected.
Thus, when the target gas is detected, the target gas is introduced into the test box, and the MoS of the target gas introduced into the test box is respectively detected2PEO humidity sensor and MoS2The humidity sensor reacts and allows MoS2PEO humidity sensor and MoS2Change in resistance value of humidity sensor, MoS2PEO humidity sensor and MoS2The resistance change condition of the humidity sensor is transmitted to an external data acquisition system through a data acquisition interface and is transmitted to the external data acquisition system through the MoS2PEO humidity sensor and MoS2Analysis of the change in resistance of the humidity sensor allows one to determine whether the target gas contains water vapor, and then analyze the change in humidity against a low humidity background by means of MoS2/PEO sensor resistance change. In particular if MoS2The resistance of the humidity sensor becomes large, and MoS2If the resistance value of the/PEO humidity sensor becomes smaller, the target gas is judged to contain water vapor, otherwise, the target gas does not contain water vapor.
In this embodiment, MoS2The composite gas-sensitive film on the/PEO humidity sensor adopts MoS2Preparing a/PEO composite material solution; MoS2MoS is adopted as a gas-sensitive film on a humidity sensor2Prepared from a solution and MoS2MoS in solution2Mass volume fraction of (2) is equal to MoS2MoS in/PEO composite solution2Mass volume fraction of (a); MoS2PEO and MoS in/PEO composite solution2The mass ratio of (A) to (B) is 1: 1-1: 10.
The invention also provides a humidity detection method, and the humidity detection system comprises the following steps:
step 1: obtaining MoS2Humidity sensor and MoS2Initial resistance value of the/PEO humidity sensor;
step 2: introducing target gas to make the target gas act on MoS2Humidity sensor and MoS2A PEO humidity sensor;
and step 3: simultaneous acquisition of MoS2Humidity sensor and MoS2The stable resistance value of the PEO humidity sensor under the action of target gas;
and 4, step 4: calculating a formula according to the response value: (R-R)0)/R0Separately calculate MoS2Humidity sensor and MoS2Response values for the/PEO humidity sensor;
and 5: if MoS2The humidity sensor is positive-responding, and MoS2If the/PEO humidity sensor has negative response, the water vapor in the target gas is judged to be contained.
Preferably, the following steps are further performed after step 5:
step 6: according to MoS2The response value of the/PEO humidity sensor calculates the humidity value of the target gas.
In the following, a description is given of a specific example:
in this embodiment, MoS2PEO and MoS in PEO humidity sensor2In a mass ratio of 1:1, MoS2The gas-sensitive film on the humidity sensor adopts MoS with the mass volume fraction of 1mg/ml2And (4) preparing a solution.
MoS was tested in environments with relative humidity of 10%, 20%, 30%, 40%, 50% and 60%, respectively2PEO humidity sensor, MoS2The resistance values of the humidity sensor and the pure PEO humidity sensor were changed, and the results are shown in fig. 4,pure PEO humidity sensor when humidity is lower than 30% RH, conductivity is poor, resistance exceeds measuring range (more than 120M omega), which greatly limits the use of PEO as resistance type humidity sensor; MoS2The resistance of the humidity sensor increases along with the increase of humidity under a low humidity environment (10% RH-30% RH), and the resistance decreases along with the increase of humidity under a high humidity environment (30% RH-60% RH), so that the humidity sensor has the characteristic of non-monotonicity change as a whole, and the MoS is greatly limited2Humidity sensor applications; and MoS2Under the condition that the humidity environment is 10-60% RH, the resistance of the PEO humidity sensor is always reduced along with the gradual increase of the humidity, and the MoS has the characteristic of monotonicity change as a whole, so that the MoS is2the/PEO humidity sensor has good humidity detection capability and effectively expands the application range.
In addition, in this embodiment, the target gases with humidity of 10% RH, 20% RH, 30% RH, 40% RH, 50% RH, and 60% RH are sequentially introduced into the dual device humidity sensor device for testing, and each humidity detection includes the following steps:
step 1: obtaining MoS2Humidity sensor and MoS2Initial resistance value of the/PEO humidity sensor;
step 2: introducing target gas to make the target gas act on MoS2Humidity sensor and MoS2A PEO humidity sensor;
and step 3: simultaneous acquisition of MoS2Humidity sensor and MoS2The stable resistance value of the PEO humidity sensor under the action of target gas;
and 4, step 4: calculating a formula according to the response value: (R-R)0)/R0Separately calculate MoS2Humidity sensor and MoS2Response values for the/PEO humidity sensor;
and 5: if MoS2The humidity sensor is positive-responding, and MoS2If the/PEO humidity sensor has negative response, the water vapor in the target gas is judged to be contained.
The results of the test are shown in FIG. 5, MoS2Humidity sensor and MoS2the/PEO humidity sensor exhibits different response polarities to humidity, i.e.MoS2The response of the humidity sensor is positive, and MoS2The response of the/PEO humidity sensor is negative, and the response is different in magnitude when the humidity is different, so that the MoS2Humidity sensor and MoS2PerPEO humidity sensor according to MoS2The response of the/PEO humidity sensor allows the calculation of the humidity value of the target gas.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the technical solutions, and those skilled in the art should understand that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all that should be covered by the claims of the present invention.
Claims (10)
1. MoS2a/PEO humidity sensor comprising electrodes characterized by: the electrode surface is covered with MoS2Composite gas-sensitive film formed of/PEO composite material, in which MoS2Is P type MoS2And PEO and MoS2The mass ratio of (A) to (B) is 1: 1-1: 10.
2. The MoS of claim 12a/PEO humidity sensor characterized by: MoS2the/PEO humidity sensor is manufactured by adopting the following method:
step 1) carrying out P-type MoS by a sound wave ultrasonic method2Uniformly dispersing PEO in absolute ethyl alcohol to form a uniformly dispersed solution, and then carrying out ultrasonic compounding on the uniformly dispersed solution with set mass to prepare MoS2A PEO composite solution;
step 2) MoS obtained in step 1)2Spraying a/PEO composite material solution on the surface of the electrode to form a composite gas-sensitive film, and then carrying out vacuum drying treatment on the electrode with the composite gas-sensitive film to prepare MoS2a/PEO humidity sensor.
3. The MoS of claim 12a/PEO humidity sensor characterized by: the electrodes are interdigital electrodes.
4. The MoS of claim 12a/PEO humidity sensor characterized by: PEO and MoS2The mass ratio of (A) to (B) is 1: 1.
5. The MoS of claim 12a/PEO humidity sensor characterized by: the thickness of the composite gas-sensitive film is 50nm-1 mu m.
6. A dual device humidity sensing device, comprising: including MoS2Humidity sensor and MoS according to claim 12a/PEO humidity sensor.
7. The dual device humidity sensing device of claim 6, wherein: also comprises a test box, MoS2PEO humidity sensor and MoS2The humidity sensors are arranged in the test cavity of the test box side by side, and both ends of the test box are provided with vent holes communicated with the test cavity; one side of the test box is provided with a data acquisition interface, MoS2PEO humidity sensor and MoS2And the signal output ends of the humidity sensors are respectively connected to the data acquisition interfaces.
8. The dual device humidity sensing device of claim 6, wherein: MoS2The composite gas-sensitive film on the/PEO humidity sensor adopts MoS2Preparing a/PEO composite material solution; MoS2MoS is adopted as a gas-sensitive film on a humidity sensor2Prepared from a solution and MoS2MoS in solution2Mass volume fraction of (2) is equal to MoS2MoS in/PEO composite solution2Mass volume fraction of (a); MoS2PEO and MoS in/PEO composite solution2The mass ratio of (A) to (B) is 1: 1-1: 10.
9. A humidity detection method, characterized by: the dual device humidity sensing apparatus of claim 6, including the steps of:
step 1: obtaining MoS2Humidity sensorAnd MoS2Initial resistance value of the/PEO humidity sensor;
step 2: introducing target gas to make the target gas act on MoS2Humidity sensor and MoS2A PEO humidity sensor;
and step 3: simultaneous acquisition of MoS2Humidity sensor and MoS2The stable resistance value of the PEO humidity sensor under the action of target gas;
and 4, step 4: calculating a formula according to the response value:
separately calculate MoS2Humidity sensor and MoS2Response values for the/PEO humidity sensor;
and 5: if MoS2The humidity sensor is positive-responding, and MoS2If the/PEO humidity sensor has negative response, the water vapor in the target gas is judged to be contained.
10. A humidity detecting method according to claim 9, wherein: the following steps are also carried out after the step 5:
step 6: according to MoS2The response value of the/PEO humidity sensor calculates the humidity value of the target gas.
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