CN111965933A - Mask plate, preparation method of mask plate and preparation method of display panel - Google Patents
Mask plate, preparation method of mask plate and preparation method of display panel Download PDFInfo
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- CN111965933A CN111965933A CN202010806795.0A CN202010806795A CN111965933A CN 111965933 A CN111965933 A CN 111965933A CN 202010806795 A CN202010806795 A CN 202010806795A CN 111965933 A CN111965933 A CN 111965933A
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- layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention discloses a mask plate and a preparation method thereof, and a preparation method of a display panel, wherein the mask plate comprises a substrate; the shielding layer is arranged on the surface of one side of the substrate; wherein the blocking layer comprises a light absorbing layer. The invention has the technical effects that the light absorption layer in the mask plate absorbs all diffracted light emitted by exposure light of the exposure machine, thereby effectively preventing the diffracted light from influencing the exposure of the photoresist and further improving the preparation yield of the display panel.
Description
Technical Field
The invention relates to the field of masks, in particular to a mask, a preparation method of the mask and a preparation method of a display panel.
Background
In the preparation of TFT-LCD, mask is an indispensable part in the photoetching process, and various design patterns are carried on the mask. In the exposure process, exposure light penetrates through the mask plate, and the design pattern is transmitted on the photoresist on the substrate, and the performance of the mask plate directly determines the quality of the photoetching process. In the exposure process, in the process that exposure light transmits the mask, the edge of the mask pattern can generate light diffraction phenomenon, thereby influencing the exposure precision.
Because the diffraction effect is a main factor for limiting the resolution in the optical exposure technology, the diffraction of light is closely related to the photoetching, because a small clear pattern is arranged on a mask plate and the distance is narrow, the exposure energy can be taken away by the diffraction pattern, and the light is dispersed, so that the area which is not required to be exposed on the photoresist is exposed, the imaging is fuzzy, and the resolution is reduced. Diffraction is easily caused when the wavelength of light is close to the size of the small hole or slit through which the light passes.
The theoretical value of the exposure precision of the existing exposure machine is 1.5um, but the minimum value that the real line CD can be made is 2.5um due to the light source diffraction of the mask plate pattern edge exposure lamp, and the exposure precision is greatly reduced.
Disclosure of Invention
The invention aims to solve the technical problems that the preparation yield of a display panel is damaged by diffraction light generated in the exposure process of the existing exposure machine, and the exposure precision of the exposure machine is low.
In order to achieve the above object, the present invention provides a mask, including: a substrate; the shielding layer is arranged on the surface of one side of the substrate; wherein the blocking layer comprises a light absorbing layer.
Further, the material of the light absorbing layer comprises a semiconductor light absorbing material or a doped material thereof.
Further, the thickness of the light absorption layer is 0.01-0.2 mm.
Furthermore, the absorption wave band of the light absorption layer is 600-1000 nanometers.
Furthermore, the shielding layer further comprises a chromium material layer arranged on the surface of the light absorbing layer far away from the substrate.
In order to achieve the above object, the present invention further provides a method for manufacturing a mask, comprising the steps of: providing a substrate; preparing a shielding layer on the upper surface of the substrate; wherein the step of preparing the shielding layer on the upper surface of the substrate comprises preparing a light absorbing layer.
Further, the preparing the light absorbing layer includes: evaporating a layer of semiconductor light absorption material or doping material thereof on the upper surface of the substrate; and forming a light absorption layer after patterning treatment.
Further, preparing the shielding layer on the upper surface of the substrate further includes: and preparing a chromium material layer on the upper surface of the light absorbing layer.
In order to achieve the above object, the present invention further provides a method for manufacturing a display panel, wherein the mask plate is used to manufacture a corresponding film layer.
Further, when the mask plate is adopted, an exposure machine is adopted for exposure processing, and exposure light of the exposure machine comprises at least one of g lines, h lines and i lines.
The invention has the technical effects that the light absorption layer is added in the shielding area of the mask plate, so that all diffraction light emitted by exposure light of an exposure machine in the exposure process can be absorbed, the influence of the diffraction light on the exposure of photoresist is effectively prevented, the preparation yield of the display panel is further improved, and meanwhile, the exposure precision of the exposure machine can also be improved.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
Fig. 1 is a schematic view of a mask according to an embodiment of the present invention;
fig. 2 is a flowchart of a mask manufacturing method according to an embodiment of the present invention.
Some of the components are identified as follows:
1. a substrate; 2. a shielding layer;
21. a light absorbing layer; 22. a chromium-based material layer.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
Specifically, referring to fig. 1, an embodiment of the invention provides a mask including a substrate 1 and a shielding layer 2.
The substrate 1 serves as a substrate of the mask plate and plays a role of a substrate.
The shielding layer 2 is arranged on the substrate 1, the region of the substrate 1 outside the shielding layer 2 is an opening region (not marked in the figure), the opening region is an exposure region in the exposure process of the mask plate, and the corresponding display panel region is an exposed region.
In the exposure process of the shielding layer 2, the corresponding display panel area is a shielded area and is a photoresist left after exposure.
In the present embodiment, the shielding layer 2 includes a light absorbing layer 21 and a chromium-based material layer 22.
The light absorption layer 21 is arranged on the upper surface of the substrate 1, has a good light absorption effect, is made of a semiconductor light absorption material or a doped material thereof, and has an absorption wavelength range of 600-1000 nanometers for diffracted light. The light absorption principle of the semiconductor light absorption material is as follows: because different substances have different molecular compositions and structures, the characteristic energy levels of the substances are different, the energy level difference is different, and the substances can only absorb light radiation which is equivalent to the energy level difference inside the molecules of the substances, so that the different substances have selectivity on the absorption of light with different wavelengths.
In this embodiment, some intrinsic semiconductor materials are listed, and the calculation formula of the absorption boundary of the intrinsic semiconductor material is:
absorption boundary λ 1240 (nm)/forbidden band width eg (ev)
The long wavelength limit is shown in Table 1 below.
TABLE 1 table of parameters of intrinsic semiconductor materials
The light absorbing layer 21 is made of cadmium selenide (CdSe) as an example, and has an energy gap Eg of 1.8eV, so that the absorption boundary λ of cadmium selenide (CdSe) is 689nm, and absorption of diffracted light in the wavelength band of the exposure light source (300nm < λ <450nm) can be realized.
The light absorbing layer 21 is made of cadmium telluride (CdTe) as an example, and since Eg is 1.5eV, the absorption boundary λ is 827nm, which allows absorption of light in the diffracted light band of an exposure light source (300nm < λ <450 nm).
The light absorbing layer 21 can also be a doped material of a semiconductor light absorbing material, such as: mg (magnesium)xZn1-xThe theoretical calculation values of the forbidden band widths Eg of O and x when taken as 0, 0.125, 0.5, 0.75 and 1 are shown in table 2 below.
TABLE 2 MgxZn1-xTheoretical value calculation table of forbidden band width Eg of O
| x | Eg/ev |
| 0.0000 | 0.9556 |
| 0.1250 | 1.2388 |
| 0.5000 | 2.0738 |
| 0.7500 | 2.6840 |
| 1.0000 | 3.5363 |
In this embodiment, x is 0.125, and the light absorbing layer 21 is made of Mg0.125Zn0.875O, having a forbidden band width Eg of 1.2388eV, and an absorption boundary λ of 1000nm, and can realize an exposure light source (300 nm)<λ<450nm) of the diffracted light wavelength band.
Because the diffraction effect is a main factor for limiting the resolution in the optical exposure technology, the diffraction of light is closely related to the photoetching, because a small clear pattern is arranged on a mask plate and the distance is narrow, the exposure energy can be taken away by the diffraction pattern, and the light is dispersed, so that the area which is not required to be exposed on the photoresist is exposed, the imaging is fuzzy, and the resolution is reduced. Diffraction is easily caused when the wavelength of light is close to the size of the small hole or slit through which the light passes.
The theoretical value of the exposure precision of the existing exposure machine is 1.5um, but the minimum value that the real line CD can be made is 2.5um due to the light source diffraction of the mask plate pattern edge exposure lamp, and the exposure precision is greatly reduced.
In order to improve the exposure precision of the exposure machine, the shielding layer 2 of the mask plate is additionally provided with the light absorption layer 21, the light absorption layer 21 is made of a larger material, the composition and the structure of molecules of different substances are not used, the different characteristic energy levels are different, the energy level difference is different, and the light radiation equivalent to the energy level difference inside the molecules of the different substances is absorbed, so that the different substances have selectivity on the absorption of light with different wavelengths, the absorption of diffracted light in a wave band of an exposure light source of the exposure machine can be ensured, and the influence of the diffracted light on the exposure of photoresist is prevented.
As shown in fig. 2, the embodiment provides a method for preparing a mask plate, which includes steps S1 to S3.
S1, providing a substrate, cleaning the substrate by using ionized water or alcohol, and drying for later use. The substrate is used as a substrate plate of the mask plate and plays a role of a substrate.
The method for manufacturing the shielding layer on the upper surface of the substrate specifically comprises the following two steps.
S2 evaporating a layer of semiconductor light absorbing material including but not limited to cadmium selenide (CdSe), cadmium telluride (CdTe), etc. or its doped material including but not limited to Mg0.125Zn0.875And O. Exposing and patterning the semiconductor light absorption material or the doped material thereof to form a light absorption layer, wherein the light absorption principle of the light absorption layer is as follows: different substances have different molecular compositions and structures, have different characteristic energy levels and different energy level differences, and can only absorb light radiation corresponding to the energy level difference inside the molecules, so that the different substances have selectivity on the absorption of light with different wavelengths, and the light absorption layer can absorb light (300 nm) in a diffraction light band of an exposure light source of an exposure machine<λ<450nm) to prevent the influence on the photoresist in the exposure process, thereby influencing the preparation of the corresponding film layer and further reducing the yield of the display panel.
S3, preparing a layer of chromium material on the upper surface of the light absorption layer, exposing and patterning the chromium material to form a chromium material layer, wherein the size of the chromium material layer corresponds to that of the light absorption layer, so as to ensure complete absorption of diffracted light in the exposure process and form a shielding layer, and the patterned area is an opening area for passing exposure light.
The technical effect of the method for preparing the mask plate is that the light absorption layer is prepared by adopting the light absorption material, and the diffraction light emitted by the exposure light source of the exposure machine in the exposure process is absorbed, so that the damage of the film layer to be etched, which is caused by overexposure of the photoresist, is prevented, and the yield of the display panel is further influenced.
The present invention further provides a method for manufacturing a display panel, where the mask plate is used to manufacture a corresponding film layer, and in an exposure process using an exposure machine, a diffraction light band of an exposure light of the exposure machine is 300nm < λ <450nm, the exposure light of the exposure machine includes at least one of g-line, h-line, and i-line, where a wavelength of the g-line is 436nm, a wavelength of the h-line is 405nm, and a wavelength of the i-line is 365nm, but not limited to the above several wavelengths of irradiation light.
By adopting the mask plate exposure treatment, the light absorption layer in the mask plate can completely absorb the diffracted light emitted by the exposure light of the exposure machine, thereby effectively preventing the diffracted light from influencing the exposure of the photoresist and further improving the preparation yield of the display panel.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The mask plate and the preparation method thereof and the preparation method of the display panel provided by the embodiment of the invention are described in detail, a specific example is applied in the text to explain the principle and the implementation mode of the invention, and the description of the embodiment is only used for helping to understand the technical scheme and the core idea of the invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A mask, comprising:
a substrate; and
the shielding layer is arranged on the surface of one side of the substrate;
wherein the blocking layer comprises a light absorbing layer.
2. A mask according to claim 1,
the light absorbing layer is made of a semiconductor light absorbing material or a doped material thereof.
3. A mask according to claim 1,
the thickness of light absorption layer is 0.01 ~ 0.2 millimeter.
4. A mask according to claim 1,
the absorption wave band of the light absorption layer is 600-1000 nanometers.
5. A mask as in claim 1, wherein the masking layer further comprises
The chromium material layer is arranged on the surface of one side, far away from the substrate, of the light absorption layer.
6. A preparation method of a mask plate is characterized by comprising the following steps:
providing a substrate; and
preparing a shielding layer on the upper surface of the substrate;
wherein the step of preparing the shielding layer on the upper surface of the substrate comprises preparing a light absorbing layer.
7. The method of manufacturing a mask according to claim 6, wherein the manufacturing of the light absorbing layer includes:
evaporating a layer of semiconductor light absorption material or doping material thereof on the upper surface of the substrate;
and forming a light absorption layer after patterning treatment.
8. A method of manufacturing a mask as claimed in claim 7, wherein the manufacturing of the shielding layer on the upper surface of the substrate further comprises:
and preparing a chromium material layer on the upper surface of the light absorbing layer.
9. A preparation method of a display panel is characterized in that the corresponding film layer is prepared by adopting the mask plate as claimed in any one of claims 1 to 5.
10. The method for manufacturing a display panel according to claim 9, wherein, when the mask is used,
and (4) carrying out exposure processing by adopting an exposure machine, wherein the exposure light of the exposure machine comprises at least one of g lines, h lines and i lines.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010806795.0A CN111965933A (en) | 2020-08-12 | 2020-08-12 | Mask plate, preparation method of mask plate and preparation method of display panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010806795.0A CN111965933A (en) | 2020-08-12 | 2020-08-12 | Mask plate, preparation method of mask plate and preparation method of display panel |
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| CN111965933A true CN111965933A (en) | 2020-11-20 |
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| CN202010806795.0A Pending CN111965933A (en) | 2020-08-12 | 2020-08-12 | Mask plate, preparation method of mask plate and preparation method of display panel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975538A (en) * | 2022-04-27 | 2022-08-30 | 武汉华星光电半导体显示技术有限公司 | Display panel and display module |
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| JP2009237556A (en) * | 2008-03-07 | 2009-10-15 | Fujifilm Corp | Method for producing photomask |
| CN102822741A (en) * | 2009-12-30 | 2012-12-12 | 英特尔公司 | Phase-shift photomask and patterning method |
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| US20140335445A1 (en) * | 2013-05-09 | 2014-11-13 | Samsung Display Co., Ltd. | Mask and method of manufacturing the same |
| CN108132582A (en) * | 2016-12-01 | 2018-06-08 | 清华大学 | Photo mask board |
| CN110767692A (en) * | 2018-12-14 | 2020-02-07 | 昆山国显光电有限公司 | Display panel, display screen and display terminal |
| CN110989288A (en) * | 2019-12-20 | 2020-04-10 | 京东方科技集团股份有限公司 | Mask, mask system and preparation and photoetching methods |
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2020
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Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140416A (en) * | 2006-04-21 | 2008-03-12 | 信越化学工业株式会社 | Photomask blank |
| JP2009237556A (en) * | 2008-03-07 | 2009-10-15 | Fujifilm Corp | Method for producing photomask |
| CN102822741A (en) * | 2009-12-30 | 2012-12-12 | 英特尔公司 | Phase-shift photomask and patterning method |
| US20140335445A1 (en) * | 2013-05-09 | 2014-11-13 | Samsung Display Co., Ltd. | Mask and method of manufacturing the same |
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| CN108132582A (en) * | 2016-12-01 | 2018-06-08 | 清华大学 | Photo mask board |
| CN110767692A (en) * | 2018-12-14 | 2020-02-07 | 昆山国显光电有限公司 | Display panel, display screen and display terminal |
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| CN114975538A (en) * | 2022-04-27 | 2022-08-30 | 武汉华星光电半导体显示技术有限公司 | Display panel and display module |
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