CN111751692A - Direct connection detection and protection method and device of IGBT - Google Patents

Direct connection detection and protection method and device of IGBT Download PDF

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CN111751692A
CN111751692A CN201910234310.2A CN201910234310A CN111751692A CN 111751692 A CN111751692 A CN 111751692A CN 201910234310 A CN201910234310 A CN 201910234310A CN 111751692 A CN111751692 A CN 111751692A
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igbt
voltage
driving
fault
determined
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CN111751692B (en
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李佳
谭超
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Weidi New Energy Co ltd
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Vertiv Tech Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/261—Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor

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Abstract

The embodiment of the invention discloses a direct connection detection and protection method and device of an IGBT (insulated gate bipolar transistor), which are used for avoiding false alarm faults or direct connection caused by slow turn-on or interference of the IGBT. The IGBT through detection method comprises the following steps: when the situation that a driving signal for driving the IGBT is changed from the turning-off state of the driving IGBT to the turning-on state of the driving IGBT is determined, detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a first preset time; and when the voltage between the drain electrode of the IGBT and the source electrode of the IGBT is determined to be larger than a preset fault voltage threshold value, determining that the IGBT has a through fault.

Description

Direct connection detection and protection method and device of IGBT
Technical Field
The invention relates to the technical field of power electronics, in particular to a direct connection detection and protection method and device of an IGBT.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power Semiconductor device composed of a Metal Oxide Semiconductor (MOS) Transistor and a Bipolar Junction Transistor (BJT), and has the advantages of both high input impedance of the MOS Transistor and low on-state voltage drop of a power Transistor (GTR).
However, when the high-power IGBT works under the working condition of high voltage and large current, the IGBT is easily damaged due to false alarm failure or through connection caused by slow turn-on or interference of the IGBT according to the existing IGBT drive through protection technology.
Disclosure of Invention
The embodiment of the invention provides a direct connection detection and protection method and device of an IGBT (insulated gate bipolar transistor), which are used for avoiding false alarm faults or direct connection caused by slow switching-on or interference of the IGBT.
In a first aspect, an embodiment of the present invention provides a method for detecting a shoot-through of an IGBT, including:
when the situation that the driving signal for driving the IGBT is changed from the turning-off state of the driving IGBT to the turning-on state of the driving IGBT is determined, detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a first preset time;
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than a preset fault voltage threshold value, determining that the IGBT has a through fault.
According to the direct connection detection method of the IGBT provided by the embodiment of the invention, when the driving signal of the IGBT is determined to be changed from the state of driving the IGBT to the state of driving the IGBT, the voltage between the drain electrode and the source electrode of the IGBT is detected after the preset time is delayed, and whether the direct connection fault occurs to the IGBT is judged according to the comparison result of the detected voltage value and the preset fault voltage threshold.
In a possible implementation manner, the method provided by the embodiment of the present invention further includes:
when the IGBT is determined to have a through fault, reducing the driving voltage of the driving signal according to a preset change rule;
and when the driving voltage of the driving signal is determined to be less than or equal to the preset driving voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
According to the direct connection detection method of the IGBT, provided by the embodiment of the invention, when the direct connection fault of the IGBT is determined, the driving voltage of the driving signal is reduced according to the preset change rule, and when the driving voltage of the driving signal is reduced to the preset driving voltage threshold value, the driving voltage is adjusted to drive the IGBT to be turned off, so that the probability that the IGBT is damaged due to overvoltage and overcurrent during direct connection protection is reduced.
In a possible implementation manner, the method provided by the embodiment of the present invention further includes:
when the IGBT is determined to have a through fault, reducing the driving voltage of the driving signal according to a preset change rule;
when the driving voltage of the driving signal is determined to be smaller than or equal to the preset driving voltage threshold, the target voltage between the drain electrode and the source electrode of the IGBT is detected again after waiting for a second preset time;
and when the target voltage is determined to be smaller than the preset fault voltage threshold value, restoring the driving voltage of the driving signal to the original voltage, wherein the original voltage is the driving voltage of the driving signal when the IGBT has the through fault.
According to the IGBT through detection method provided by the embodiment of the invention, when the IGBT is determined to be in fault, the driving voltage of the driving signal is reduced according to the preset change rule, so that the probability that the IGBT is damaged due to overvoltage and overcurrent during through protection is reduced, meanwhile, when the driving voltage of the driving signal is reduced to the preset driving voltage threshold value, the driving voltage is not immediately adjusted to drive the IGBT to be closed, whether the through fault exists is judged again after waiting for the preset time, and if the through fault disappears, the driving voltage of the driving signal is recovered to the original voltage, so that the reliability of the system is improved.
In a possible implementation manner, the method provided by the embodiment of the present invention further includes:
when the direct connection fault of the IGBT is determined, the target voltage between the drain electrode and the source electrode of the IGBT is detected again after waiting for a second preset time;
and driving the IGBT by using the driving signal when the target voltage is determined to be smaller than the preset fault voltage threshold value.
According to the direct connection detection method of the IGBT, when the IGBT is determined to be in fault, the driving voltage is not immediately adjusted to drive the IGBT to be turned off, whether the direct connection fault exists is judged again after waiting for the preset time, and if the direct connection fault disappears, the driving voltage of the driving signal is restored to the original voltage, so that the reliability of the system is improved.
In a possible implementation manner, the method provided by the embodiment of the present invention further includes:
and when the target voltage is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
In a second aspect, an embodiment of the present invention provides a through protection method for an IGBT, including:
when the IGBT is determined to have a through fault, reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule;
and when the driving voltage of the driving signal is determined to be less than or equal to the preset driving voltage threshold value, adjusting the driving voltage to drive the IGBT to be turned off.
According to the direct connection protection method of the IGBT, provided by the embodiment of the invention, when the direct connection fault of the IGBT is determined, the driving voltage of the driving signal is reduced according to the preset change rule, and when the driving voltage of the driving signal is reduced to the preset driving voltage threshold value, the driving voltage is adjusted to drive the IGBT to be turned off, so that the probability that the IGBT is damaged due to overvoltage and overcurrent during direct connection protection is reduced.
In a third aspect, an embodiment of the present invention provides another IGBT shoot-through protection method, including:
when the IGBT is determined to have a through fault, reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule;
when the driving voltage of the driving signal is determined to be smaller than or equal to a preset driving voltage threshold, detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a preset time;
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be smaller than the preset fault voltage threshold value, restoring the driving voltage of the driving signal to the original voltage, wherein the original voltage is the driving voltage of the driving signal when the IGBT has the through fault.
According to the IGBT through protection method provided by the embodiment of the invention, when the IGBT is determined to be in fault, the driving voltage of the driving signal for driving the IGBT is reduced according to the preset change rule, so that the probability that the IGBT is damaged due to overvoltage and overcurrent during through protection is reduced, meanwhile, when the driving voltage of the driving signal is reduced to the preset driving voltage threshold value, the driving voltage is not immediately adjusted to drive the IGBT to be closed, whether the through fault exists is judged again after waiting for the preset time, and if the through fault disappears, the driving voltage of the driving signal is restored to the original voltage, so that the reliability of the system is improved.
In a possible implementation manner, the method provided by the embodiment of the present invention further includes:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
In a fourth aspect, an embodiment of the present invention provides another IGBT shoot-through protection method, including:
when the direct connection fault of the IGBT is determined, detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a preset time;
and driving the IGBT by using the driving signal when the voltage between the drain electrode and the source electrode of the IGBT is determined to be less than the preset fault voltage threshold value.
According to the direct connection protection method for the IGBT, provided by the embodiment of the invention, when the direct connection fault of the IGBT is determined, the driving voltage of the driving signal for driving the IGBT is reduced according to the preset change rule, and when the driving voltage of the driving signal is reduced to the preset driving voltage threshold value, the driving voltage is adjusted to drive the IGBT to be closed, so that the probability that the IGBT is damaged due to overvoltage and overcurrent during direct connection protection is reduced.
In a possible implementation manner, the method provided by the embodiment of the present invention further includes:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
In a fifth aspect, an embodiment of the present invention provides a shoot-through detection device for an IGBT, including:
the detection unit is used for detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a first preset time when the driving signal for driving the IGBT is determined to be changed from the state that the IGBT is closed to the state that the IGBT is opened;
and the processing unit is used for determining that the IGBT has the through fault when the voltage between the drain electrode and the source electrode of the IGBT is larger than the preset fault voltage threshold value.
In a possible implementation manner, the apparatus provided in the embodiment of the present invention further includes a fault handling unit, which is specifically configured to:
when the IGBT is determined to have a through fault, reducing the driving voltage of the driving signal according to a preset change rule;
and when the driving voltage of the driving signal is determined to be less than or equal to the preset driving voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
In a possible implementation manner, the apparatus provided in the embodiment of the present invention further includes a fault handling unit, which is specifically configured to:
when the IGBT is determined to have a through fault, reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule;
when the driving voltage of the driving signal is determined to be smaller than or equal to the preset driving voltage threshold, the target voltage between the drain electrode and the source electrode of the IGBT is detected again after waiting for a second preset time;
and when the target voltage is determined to be smaller than the preset fault voltage threshold value, restoring the driving voltage of the driving signal to the original voltage, wherein the original voltage is the driving voltage of the driving signal when the IGBT has the through fault.
In a possible implementation manner, the apparatus provided in the embodiment of the present invention further includes a fault handling unit, which is specifically configured to:
when the direct connection fault of the IGBT is determined, the target voltage between the drain electrode and the source electrode of the IGBT is detected again after waiting for a second preset time;
and driving the IGBT by using the driving signal when the target voltage is determined to be smaller than the preset fault voltage threshold value.
In a possible implementation manner, in the apparatus provided in an embodiment of the present invention, the fault handling unit is further configured to:
and when the target voltage is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
In a sixth aspect, an embodiment of the present invention provides a shoot-through protection device for an IGBT, including:
the processing unit is used for reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule when the IGBT is determined to have the through fault;
and the control unit is used for adjusting the driving voltage to drive the IGBT to be turned off when the driving voltage of the driving signal is determined to be less than or equal to the preset driving voltage threshold value.
In a seventh aspect, an embodiment of the present invention provides another IGBT shoot-through protection device, including:
the processing unit is used for reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule when the IGBT is determined to have the through fault;
the detection unit is used for detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a preset time when the driving voltage of the driving signal is determined to be less than or equal to a preset driving voltage threshold value;
and the control unit is used for recovering the driving voltage of the driving signal to an original voltage when the voltage between the drain electrode and the source electrode of the IGBT is determined to be smaller than a preset fault voltage threshold, wherein the original voltage is the driving voltage of the driving signal when the IGBT has a through fault.
In a possible implementation manner, the control unit in the apparatus provided in the embodiment of the present invention is further configured to:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
In an eighth aspect, an embodiment of the present invention provides another IGBT shoot-through protection device, including:
the detection unit is used for detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a preset time when the IGBT is determined to have a through fault;
and the processing unit is used for driving the IGBT by using the driving signal when the voltage between the drain electrode and the source electrode of the IGBT is determined to be less than the preset fault voltage threshold value.
In a possible implementation manner, the processing unit in the apparatus provided in the embodiment of the present invention is further configured to:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
Drawings
Fig. 1 is a schematic flow chart of a through detection method of an IGBT according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a principle of a through detection method of an IGBT according to an embodiment of the present invention;
fig. 3 is another schematic diagram of a through detection method of an IGBT according to an embodiment of the present invention;
fig. 4 is a schematic diagram of another principle of the IGBT shoot-through detection method according to the embodiment of the present invention;
fig. 5 is a schematic diagram of still another principle of the IGBT shoot-through detection method according to the embodiment of the present invention;
fig. 6 is a flowchart of a through protection method for an IGBT according to an embodiment of the present invention;
fig. 7 is a schematic diagram illustrating a through protection method of an IGBT according to an embodiment of the present invention;
fig. 8 is a flowchart of another IGBT shoot-through protection method according to an embodiment of the present invention;
fig. 9 is a schematic diagram illustrating a through protection method of an IGBT according to an embodiment of the present invention;
fig. 10 is a flowchart of a through protection method for another IGBT according to an embodiment of the present invention;
fig. 11 is a schematic diagram illustrating a through protection method of an IGBT according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of a shoot-through detection device of an IGBT according to an embodiment of the present invention;
fig. 13 is a schematic structural diagram of a shoot-through protection device of an IGBT according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of a through protection device of another IGBT according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram of a through protection device of another IGBT according to an embodiment of the present invention.
Detailed Description
The following describes in detail specific embodiments of a method and an apparatus for detecting and protecting a shoot-through of an IGBT according to an embodiment of the present invention with reference to the accompanying drawings.
It should be noted that the IGBT shoot-through detection and protection methods provided in the embodiments of the present invention may be implemented individually or in combination, and the embodiments of the present invention do not limit this.
As shown in fig. 1, an embodiment of the present invention provides a method for detecting a shoot-through of an IGBT, including the following steps:
s101, when the situation that the driving signal of the driving IGBT is changed from the turning-off state of the driving IGBT to the turning-on state of the driving IGBT is determined, the voltage between the drain electrode and the source electrode of the IGBT is detected after waiting for a first preset time.
In specific implementation, when the driving signal of the IGBT is determined to be changed from the state of driving the IGBT to the state of driving the IGBT, the voltage between the drain electrode and the source electrode of the IGBT is detected after waiting for a first preset time.
And S102, when the voltage between the drain electrode and the source electrode of the IGBT is larger than a preset fault voltage threshold value, determining that the IGBT has a through fault.
In specific implementation, the first preset time and the preset fault voltage threshold may be set according to actual requirements, which is not limited in the present invention. For example, the first preset duration may be set to 5 microseconds (μ s) and the preset fault voltage threshold is 9 volts (V).
In specific implementation, the method provided in the embodiment of the present invention stops the detection when it is determined that the driving signal for driving the IGBT is to drive the IGBT to turn off.
In one example, as shown in fig. 2, Vge is a driving signal voltage, Vce is a voltage between a drain and a source of the IGBT, and t is a first preset time period, when the driving signal is changed from turning off of the driving IGBT to turning on of the driving IGBT, the voltage between the drain and the source of the IGBT is detected after the preset time period t is delayed, and when the voltage between the drain and the source of the IGBT is greater than a preset fault voltage threshold, it is determined that the IGBT has a shoot-through fault.
In a possible implementation manner, in the embodiment of the present invention, when it is determined that the IGBT has the shoot-through fault, the driving voltage of the driving signal for driving the IGBT is reduced according to the preset variation rule, and when it is determined that the driving voltage of the driving signal is less than or equal to the preset driving voltage threshold, the driving voltage is adjusted to drive the IGBT to turn off.
In specific implementation, the preset change rule may be flexibly set according to actual needs, which is not limited in the embodiment of the present invention, for example, the preset change rule is a decrease of 0.1V or 0.5V per microsecond.
It should be noted that the preset driving voltage threshold may be set according to actual needs, which is not limited in the embodiment of the present invention. For example, the preset driving voltage threshold is 8V.
In one example, as shown in fig. 3, Vge is the driving signal voltage, Vce is the voltage between the drain and the source of the IGBT, t is the first preset time period, t is1The moment is the time point t for determining the occurrence of the direct fault of the IGBT2The moment is the point in time at which the drive voltage is adjusted to drive the IGBT off, V0For presetting the driving voltage threshold, at t1At the moment, determining that the voltage between the drain electrode and the source electrode of the IGBT is larger than a preset fault voltage threshold value, namely determining that the IGBT has a through fault, and starting to reduce the driving voltage of a driving signal for driving the IGBT according to a preset change rule until t is reached2And at the moment, the driving voltage of the driving signal is smaller than or equal to the preset driving voltage threshold, and the driving voltage is adjusted to drive the IGBT to be closed.
In a possible implementation manner, in the embodiment of the present invention, when it is determined that the IGBT has the through fault, the driving voltage of the driving signal for driving the IGBT is reduced according to the preset change rule, when it is determined that the driving voltage of the driving signal is less than or equal to the preset driving voltage threshold, the target voltage between the drain and the source of the IGBT is detected again after waiting for the second preset time period, and when it is determined that the target voltage is less than the preset fault voltage threshold, the driving voltage of the driving signal is restored to the original voltage, where the original voltage is the driving voltage of the driving signal when the IGBT has the through fault.
In specific implementation, the preset change rule can be flexibly set according to actual needs, and the embodiment of the invention does not limit the preset change rule. For example, the predetermined variation law is 0.1V or 0.5V per microsecond.
It should be noted that the second preset time period may be set according to actual needs, which is not limited in the embodiment of the present invention. For example, the second preset time period may be set to 20 μ s.
In one example, as shown in fig. 4, Vge is the driving signal voltage, Vce is the voltage between the drain and the source of the IGBT, t is the first preset time period, t is1The moment is the time point t for determining the occurrence of the direct fault of the IGBT2Point in time, t, at which the target voltage between the drain and the source of the IGBT is re-detected1-t2Is the second preset time period t'.
At t1At the moment, the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than a preset fault voltage threshold value, namely the IGBT is determined to have a through fault, the driving voltage of a driving signal for driving the IGBT is reduced according to a preset change rule, and the driving voltage reaches t after a second preset time period t2At the moment, the target voltage between the drain electrode and the source electrode of the IGBT is redetected, if the target voltage is smaller than a preset fault voltage threshold value, namely the IGBT does not have a through fault, the driving voltage of the driving signal is recovered to the original voltage, and when the original voltage is the IGBT with the through fault, namely t1And if the target voltage of the driving signal at the moment is greater than or equal to the preset fault voltage threshold, namely the through fault still exists, regulating the driving voltage to drive the IGBT to be closed.
In a possible implementation manner, in the embodiment of the present invention, when it is determined that the IGBT has a shoot-through fault, the target voltage between the drain and the source of the IGBT is detected again after waiting for the second preset time period, and when it is determined that the target voltage is smaller than the preset fault voltage threshold, the IGBT is driven by using the driving signal.
It should be noted that the second preset time period may be set according to actual needs, which is not limited in the embodiment of the present invention. For example, the second preset time period may be set to 20 μ s.
In one example, as shown in fig. 5, Vge is the driving signal voltage, Vce is the voltage between the drain and the source of the IGBT, t is the first preset time period, t is1The moment is the time point t for determining the occurrence of the direct fault of the IGBT2Point in time, t, at which the target voltage between the drain and the source of the IGBT is re-detected1-t2Is the second preset time period t'.
At t1At the moment, the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than a preset fault voltage threshold value, namely the IGBT is determined to reach t after a second preset time period t' after a through fault occurs2At that time, the target voltage between the drain and the source of the IGBT is detected again. If the target voltage is smaller than the preset fault voltage threshold value, namely the IGBT has no through fault, the driving voltage of the driving signal is recovered to the original voltage, and the original voltage is the through fault of the IGBT, namely t1And if the target voltage of the driving signal at the moment is greater than or equal to the preset fault voltage threshold, the through fault still exists, and the driving voltage is adjusted to drive the IGBT to be turned off.
The IGBT shoot-through protection method according to the embodiment of the present invention will be described in detail with reference to fig. 6 to 11.
As shown in fig. 6, an embodiment of the present invention provides a through protection method for an IGBT, including:
s601, when the IGBT is determined to have the through fault, reducing the driving voltage of the driving signal for driving the IGBT according to a preset change rule.
And S602, when the driving voltage of the driving signal is determined to be less than or equal to the preset driving voltage threshold, adjusting the driving voltage to drive the IGBT to be turned off.
In specific implementation, the preset change rule can be flexibly set according to actual needs, and the embodiment of the invention does not limit the preset change rule. For example, the predetermined variation law is 0.1V or 0.5V per microsecond.
It should be noted that the preset driving voltage threshold may be set according to actual needs, which is not limited in the embodiment of the present invention. For example, the preset drive voltage threshold is set to 8V.
In one example, as shown in FIG. 7, Vge is the driving signal voltage, Vce is the voltage between the drain and source of the IGBT, t1The moment is the time point t for determining the occurrence of the direct fault of the IGBT2The moment is the point in time at which the drive voltage is adjusted to drive the IGBT off, V0Is a preset driving voltage threshold.
At t1Determining the moment and the IGBT power generationGenerating a through fault, and starting to reduce the driving voltage of the driving signal for driving the IGBT according to a preset change rule until t is reached2And at the moment, the driving voltage of the driving signal is smaller than or equal to the preset driving voltage threshold, and the driving voltage is adjusted to drive the IGBT to be closed.
As shown in fig. 8, an embodiment of the present invention provides another IGBT shoot-through protection method, including the following steps:
s801, when the IGBT is determined to have the through fault, reducing the driving voltage of the driving signal for driving the IGBT according to a preset change rule.
S802, when the driving voltage of the driving signal is determined to be smaller than or equal to the preset driving voltage threshold, detecting the voltage between the drain and the source of the IGBT after waiting for the preset time.
And S803, when the voltage between the drain and the source of the IGBT is determined to be less than the preset fault voltage threshold, restoring the driving voltage of the driving signal to the original voltage, wherein the original voltage is the driving voltage of the driving signal when the IGBT has the through fault.
In specific implementation, the preset change rule can be flexibly set according to actual needs, and the embodiment of the invention does not limit the preset change rule. For example, the predetermined variation law is 0.1V or 0.5V per microsecond.
It should be noted that the preset time period may be set according to actual needs, and this is not limited in the embodiment of the present invention. For example, the preset time period is set to 20 μ s.
In one example, as shown in fig. 9, Vge is the driving signal voltage, Vce is the voltage between the drain and the source of the IGBT, t is the preset time length, t is1The moment is the time point t for determining the occurrence of the direct fault of the IGBT2And re-detecting the time point of the target voltage between the drain and the source of the IGBT.
At t1At the moment, determining that the voltage between the drain electrode and the source electrode of the IGBT is larger than a preset fault voltage threshold value, namely determining that the IGBT has a through fault, starting to reduce the driving voltage of a driving signal for driving the IGBT according to a preset change rule, and reaching t after a preset time period t2At that time, the target voltage between the drain and the source of the IGBT is detected again. If the target voltage is less thanPresetting a fault voltage threshold, namely that the IGBT has no through fault, recovering the driving voltage of the driving signal to the original voltage, wherein the original voltage is t when the IGBT has the through fault1And if the target voltage of the driving signal at the moment is greater than or equal to the preset fault voltage threshold, namely the through fault still exists, regulating the driving voltage to drive the IGBT to be closed.
In a possible implementation manner, the method provided by the embodiment of the present invention further includes the following steps:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
As shown in fig. 10, an embodiment of the present invention provides another IGBT shoot-through protection method, including the following steps:
s1001, when the IGBT is determined to have the through fault, the voltage between the drain electrode and the source electrode of the IGBT is detected after the preset time is waited.
And S1002, when the voltage between the drain electrode and the source electrode of the IGBT is determined to be smaller than a preset fault voltage threshold value, driving the IGBT by using a driving signal.
In one example, as shown in fig. 11, Vge is the driving signal voltage, Vce is the voltage between the drain and the source of the IGBT, t is the preset time period, t is1The moment is the time point t for determining the occurrence of the direct fault of the IGBT2And re-detecting the time point of the target voltage between the drain and the source of the IGBT.
At t1At the moment, determining that the voltage between the drain electrode and the source electrode of the IGBT is larger than a preset fault voltage threshold value, namely determining that the IGBT has a through fault, and reaching t after a preset time period t2At the moment, the target voltage between the drain electrode and the source electrode of the IGBT is redetected, if the target voltage is smaller than a preset fault voltage threshold value, namely the IGBT does not have a through fault, the driving voltage of the driving signal is recovered to the original voltage, and when the original voltage is the IGBT with the through fault, namely t1And if the target voltage of the driving signal at the moment is greater than or equal to the preset fault voltage threshold, namely the through fault still exists, regulating the driving voltage to drive the IGBT to be closed.
Based on the same inventive concept, an embodiment of the present invention provides a shoot-through detection device for an IGBT, as shown in fig. 12, the device includes:
the detection unit 1201 is used for detecting the voltage between the drain and the source of the IGBT after waiting for a first preset time when the situation that the driving signal for driving the IGBT is changed from the turn-off of the driving IGBT to the turn-on of the driving IGBT is determined;
and the processing unit 1202 is configured to determine that the IGBT has a shoot-through fault when it is determined that the voltage between the drain and the source of the IGBT is greater than a preset fault voltage threshold.
In a possible implementation manner, the apparatus provided in the embodiment of the present invention further includes a fault processing unit 1203, configured to:
when the IGBT is determined to have a through fault, reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule;
and when the driving voltage of the driving signal is determined to be less than or equal to the preset driving voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
In a possible implementation manner, the apparatus provided in the embodiment of the present invention further includes a fault processing unit 1203, configured to:
when the IGBT is determined to have a through fault, reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule;
when the driving voltage of the driving signal is determined to be smaller than or equal to the preset driving voltage threshold, the target voltage between the drain electrode and the source electrode of the IGBT is detected again after waiting for a second preset time;
and when the target voltage is determined to be smaller than the preset fault voltage threshold value, restoring the driving voltage of the driving signal to the original voltage, wherein the original voltage is the driving voltage of the driving signal when the IGBT has the through fault.
In a possible implementation manner, the apparatus provided in the embodiment of the present invention further includes a fault processing unit 1203, configured to:
when the direct connection fault of the IGBT is determined, the target voltage between the drain electrode and the source electrode of the IGBT is detected again after waiting for a second preset time;
and driving the IGBT by using the driving signal when the target voltage is determined to be smaller than the preset fault voltage threshold value.
In a possible implementation manner, in the apparatus provided in the embodiment of the present invention, the fault handling unit 1203 is further configured to:
and when the target voltage is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
As shown in fig. 13, an embodiment of the present invention provides a shoot-through protection device for an IGBT, including:
the processing unit 1301 is configured to reduce a driving voltage of a driving signal for driving the IGBT according to a preset change rule when it is determined that the IGBT has a shoot-through fault;
and a control unit 1302, configured to adjust the driving voltage to drive the IGBT to turn off when it is determined that the driving voltage of the driving signal is less than or equal to a preset driving voltage threshold.
As shown in fig. 14, an embodiment of the present invention provides another IGBT shoot-through protection device, including:
the processing unit 1401 is used for reducing the driving voltage of the driving signal for driving the IGBT according to a preset change rule when the IGBT is determined to have the through fault;
a detection unit 1402, configured to detect a voltage between a drain and a source of the IGBT after waiting for a preset time period when it is determined that a driving voltage of the driving signal is less than or equal to a preset driving voltage threshold;
the control unit 1403 is configured to restore the driving voltage of the driving signal to an original voltage when it is determined that the voltage between the drain and the source of the IGBT is smaller than a preset fault voltage threshold, where the original voltage is the driving voltage of the driving signal when the IGBT has a shoot-through fault.
In a possible implementation manner, the control unit 1403 in the apparatus provided in this embodiment of the present invention is further configured to:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
As shown in fig. 15, an embodiment of the present invention provides a shoot-through protection device for an IGBT, including:
the detection unit 1501 is used for detecting the voltage between the drain and the source of the IGBT after waiting for a preset time when it is determined that the IGBT has a shoot-through fault;
and a processing unit 1502 for driving the IGBT with the driving signal when it is determined that the voltage between the drain and the source of the IGBT is less than the preset fault voltage threshold.
In a possible implementation manner, the processing unit 1502 in the apparatus provided in the embodiment of the present invention is further configured to:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, regulating the driving voltage to drive the IGBT to be closed.
While the preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (20)

1. A direct-current detection method of an Insulated Gate Bipolar Transistor (IGBT) is characterized by comprising the following steps:
when the situation that a driving signal for driving the IGBT is changed from the turning-off state of the driving IGBT to the turning-on state of the driving IGBT is determined, detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a first preset time;
and when the voltage between the drain electrode of the IGBT and the source electrode of the IGBT is determined to be larger than a preset fault voltage threshold value, determining that the IGBT has a through fault.
2. The method of claim 1, further comprising:
when the IGBT is determined to have a through fault, reducing the driving voltage of the driving signal according to a preset change rule;
and when the driving voltage of the driving signal is determined to be less than or equal to a preset driving voltage threshold value, adjusting the driving voltage to drive the IGBT to be turned off.
3. The method of claim 1, further comprising:
when the IGBT is determined to have a through fault, reducing the driving voltage of the driving signal according to a preset change rule;
when the driving voltage of the driving signal is determined to be smaller than or equal to a preset driving voltage threshold, re-detecting the target voltage between the drain and the source of the IGBT after waiting for a second preset time;
and when the target voltage is determined to be smaller than the preset fault voltage threshold, restoring the driving voltage of the driving signal to an original voltage, wherein the original voltage is the driving voltage of the driving signal when the IGBT has a through fault.
4. The method of claim 1, further comprising:
when the direct-connection fault of the IGBT is determined, the target voltage between the drain electrode and the source electrode of the IGBT is detected again after waiting for a second preset time;
and driving the IGBT by using the driving signal when the target voltage is determined to be smaller than the preset fault voltage threshold value.
5. The method according to claim 3 or 4, characterized in that the method further comprises:
and when the target voltage is determined to be larger than the preset fault voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
6. A direct-current protection method of an Insulated Gate Bipolar Transistor (IGBT) is characterized by comprising the following steps:
when the IGBT is determined to have a through fault, reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule;
and when the driving voltage of the driving signal is determined to be less than or equal to a preset driving voltage threshold value, adjusting the driving voltage to drive the IGBT to be turned off.
7. A direct-current protection method of an Insulated Gate Bipolar Transistor (IGBT) is characterized by comprising the following steps:
when the IGBT is determined to have a through fault, reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule;
when the driving voltage of the driving signal is determined to be smaller than or equal to a preset driving voltage threshold, detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a preset time;
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be smaller than a preset fault voltage threshold value, restoring the driving voltage of the driving signal to an original voltage, wherein the original voltage is the driving voltage of the driving signal when the IGBT has a through fault.
8. The method of claim 7, further comprising:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
9. A direct-current protection method of an Insulated Gate Bipolar Transistor (IGBT) is characterized by comprising the following steps:
when the IGBT is determined to have a through fault, detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a preset time;
and driving the IGBT by using the driving signal when the voltage between the drain electrode and the source electrode of the IGBT is determined to be less than a preset fault voltage threshold value.
10. The method of claim 9, further comprising:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
11. A direct-current detection device of an Insulated Gate Bipolar Transistor (IGBT) is characterized by comprising:
the detection unit is used for detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a first preset time when the situation that the driving signal for driving the IGBT is changed from the state that the driving IGBT is closed to the state that the driving IGBT is opened is determined;
and the processing unit is used for determining that the IGBT has a through fault when the voltage between the drain electrode and the source electrode of the IGBT is determined to be greater than a preset fault voltage threshold value.
12. The apparatus of claim 11, further comprising:
a fault handling unit to:
when the IGBT is determined to have a through fault, reducing the driving voltage of the driving signal according to a preset change rule;
and when the driving voltage of the driving signal is determined to be less than or equal to a preset driving voltage threshold value, adjusting the driving voltage to drive the IGBT to be turned off.
13. The apparatus of claim 11, further comprising:
a fault handling unit to:
when the IGBT is determined to have a through fault, reducing the driving voltage of the driving signal according to a preset change rule;
when the driving voltage of the driving signal is determined to be smaller than or equal to a preset driving voltage threshold, re-detecting the target voltage between the drain and the source of the IGBT after waiting for a second preset time;
and when the target voltage is determined to be smaller than the preset fault voltage threshold, restoring the driving voltage of the driving signal to an original voltage, wherein the original voltage is the driving voltage of the driving signal when the IGBT has a through fault.
14. The apparatus of claim 11, further comprising:
a fault handling unit to:
when the direct-connection fault of the IGBT is determined, the target voltage between the drain electrode and the source electrode of the IGBT is detected again after waiting for a second preset time;
and driving the IGBT by using the driving signal when the target voltage is determined to be smaller than the preset fault voltage threshold value.
15. The apparatus according to claim 13 or 14, wherein the fault handling unit is further configured to:
and when the target voltage is determined to be larger than the preset fault voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
16. A direct-current protection device of an Insulated Gate Bipolar Transistor (IGBT) is characterized by comprising:
the processing unit is used for reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule when the IGBT is determined to have the through fault;
and the control unit is used for adjusting the driving voltage to drive the IGBT to be closed when the driving voltage of the driving signal is determined to be less than or equal to a preset driving voltage threshold value.
17. A direct-current protection device of an Insulated Gate Bipolar Transistor (IGBT) is characterized by comprising:
the processing unit is used for reducing the driving voltage of a driving signal for driving the IGBT according to a preset change rule when the IGBT is determined to have the through fault;
the detection unit is used for detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a preset time when the driving voltage of the driving signal is determined to be less than or equal to a preset driving voltage threshold value;
and the control unit is used for recovering the driving voltage of the driving signal to an original voltage when the voltage between the drain electrode and the source electrode of the IGBT is determined to be smaller than a preset fault voltage threshold value, wherein the original voltage is the driving voltage of the driving signal when the IGBT has a through fault.
18. The apparatus of claim 17, wherein the control unit is further configured to:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
19. A direct-current protection device of an Insulated Gate Bipolar Transistor (IGBT) is characterized by comprising:
the detection unit is used for detecting the voltage between the drain electrode and the source electrode of the IGBT after waiting for a preset time when the IGBT is determined to have the through fault;
and the processing unit is used for driving the IGBT by using the driving signal when the voltage between the drain electrode and the source electrode of the IGBT is determined to be less than a preset fault voltage threshold value.
20. The apparatus of claim 19, wherein the processing unit is further configured to:
and when the voltage between the drain electrode and the source electrode of the IGBT is determined to be larger than the preset fault voltage threshold value, adjusting the driving voltage to drive the IGBT to be closed.
CN201910234310.2A 2019-03-26 2019-03-26 IGBT through detection and protection method and device Active CN111751692B (en)

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CN206331081U (en) * 2016-09-18 2017-07-14 深圳市禾望电气股份有限公司 The device of semiconductor devices fault detect
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331994A (en) * 1979-09-28 1982-05-25 Borg-Warner Corporation Shootthrough fault protection system for a voltage source transistor inverter
JPH07235609A (en) * 1994-02-14 1995-09-05 Siemens Ag Protective device for field-effect transistor
CN201708537U (en) * 2010-06-21 2011-01-12 广东易事特电源股份有限公司 Straight-through protective circuit for bridge arm of converter
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