CN111642061B - Vienna rectifying silicon carbide power module with double-sided structure and preparation method thereof - Google Patents

Vienna rectifying silicon carbide power module with double-sided structure and preparation method thereof Download PDF

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CN111642061B
CN111642061B CN202010485710.3A CN202010485710A CN111642061B CN 111642061 B CN111642061 B CN 111642061B CN 202010485710 A CN202010485710 A CN 202010485710A CN 111642061 B CN111642061 B CN 111642061B
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diode
silicon carbide
dbc substrate
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CN111642061A (en
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王来利
赵成
李锡光
杨奉涛
齐志远
王见鹏
陈阳
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Guangdong Tianze Hengyi Technology Co ltd
Xian Jiaotong University
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Xian Jiaotong University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/184—Components including terminals inserted in holes through the printed circuit board and connected to printed contacts on the walls of the holes or at the edges thereof or protruding over or into the holes
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    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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    • H05K2201/0929—Conductive planes
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    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention discloses a silicon carbide power module with a double-sided structure for Vienna rectification and a preparation method thereof1And AC2The midpoint of the DC side includes O1And O2(ii) a A bonding wire is arranged on the lower DBC substrate to realize Kelvin connection of the driving part; minimization of the commutation loop path is achieved by decoupling the two commutation paths from each other in the double-sided silicon carbide power module. The invention has the advantages of small loop parasitic inductance, high heat dissipation efficiency, small volume, high switching speed and the like.

Description

Vienna rectifying silicon carbide power module with double-sided structure and preparation method thereof
Technical Field
The invention belongs to the technical field of power modules, and particularly relates to a silicon carbide power module with a double-sided structure for Vienna rectification and a preparation method thereof.
Background
With the development of economy, environmental problems and energy crisis become increasingly prominent, and the development and use of clean energy are urgently needed. Therefore, the new energy automobile represented by the electric automobile has wide application and development prospects. The charging pile and the vehicle-mounted charger of the electric automobile are key basic equipment for realizing large-scale popularization and application of the electric automobile in the future. The charging pile and the vehicle-mounted charger are usually designed by adopting an AC/DC and DC/DC two-stage topology, wherein a Vienna rectifying topology in an AC/DC front stage is a topology structure which is applied more at present. The Vienna rectifying topology is a three-level rectifying topology, but compared with a common half-bridge three-level topology, the Vienna rectifying topology requires fewer switching devices, and each bridge arm can be realized by only one switching tube combined with a plurality of diodes, so that the cost of charging piles and vehicle-mounted chargers can be greatly reduced. This also makes the Vienna rectification topology a widely used topology in the pre-stage rectification part of the charging pile and the vehicle charger.
Due to the material characteristics of the silicon carbide, the silicon carbide device has the advantages of high voltage resistance, small on-state internal resistance, high temperature resistance, high switching speed and the like. A great deal of advantages of the silicon carbide power semiconductor device enable the silicon carbide power semiconductor device to have good application prospect in charging piles and vehicle-mounted chargers. Firstly, the efficiency can be obviously improved due to the low on-state internal resistance, the volume and the weight of a passive element can be greatly reduced due to the high switching frequency, the requirement on the heat dissipation condition is lowered due to the high-temperature resistance of the silicon carbide device, the volume and the weight of a heat dissipation system can be further reduced, the volume and the weight of the whole charging device are further reduced, and the overall power density is improved. However, compared with the traditional silicon device, the silicon carbide device is more sensitive to the parasitic inductance of the loop, and under the same parasitic parameters, the voltage overshoot and the oscillation caused by using the silicon carbide device are more serious, so that certain threat is brought to the safe operation of the device, and the serious oscillation may cause the problem of electromagnetic interference, which affects the safe and stable operation of the whole system.
In summary, in order to improve the efficiency and power density of a charging pile and an on-board charger by using a silicon carbide device in a Vienna rectifier, a double-sided heat-dissipation high-power-density silicon carbide power module for Vienna rectification is provided.
Disclosure of Invention
The invention aims to solve the technical problem of providing a silicon carbide power module with a double-sided structure for Vienna rectification and a preparation method thereof aiming at the defects in the prior art, wherein a busbar type double-sided heat dissipation structure is adopted. On one hand, the size of the commutation loop is greatly reduced, so that the parasitic inductance of the whole commutation loop is reduced, and overvoltage during turn-off and voltage and current oscillation during switching are effectively inhibited; on the other hand, the module adopts a double-sided heat dissipation structure, so that the overall heat dissipation efficiency is greatly improved, and the design requirement on a heat dissipation system is reduced.
The invention adopts the following technical scheme:
a silicon carbide power module with a double-sided structure for Vienna rectification adopts a mother-row double-sided structure and comprises an upper DBC substrate and a lower DBC substrate, each DBC substrate comprises two copper layers, a Vienna rectification topology circuit is arranged on one copper layer, and an input alternating current end of the Vienna rectification topology circuit comprises AC1And AC2The midpoint of the DC side includes O1And O2(ii) a A bonding wire is arranged on the lower DBC substrate to realize Kelvin connection of the driving part; minimization of the commutation loop path is achieved by decoupling the two commutation paths from each other in the double-sided silicon carbide power module.
Specifically, the Vienna rectifying topology circuit comprises a silicon carbide MOSFET Q1, the grid of the silicon carbide MOSFET Q1 is connected with a driving grid G, the drain of the silicon carbide MOSFET Q1 is divided into three paths, the three paths of the drain are respectively connected with the anode of a diode D1, the cathode of a diode D2 is connected with the cathode of a diode D3, the cathode of a diode D1 is connected with a DC +, and the anode of a diode D2 is connected with an AC input port1The anode of the diode D3 is connected with the DC side midpoint O1(ii) a The source electrode of the silicon carbide MOSFET Q1 is divided into four paths, one path is connected with the driving source electrode K, the remaining three paths are respectively connected with the anode of the diode D4, the anode of the diode D5, the cathode of the diode D6 and the cathode of the diode D4, and the AC input port is arranged at the AC input port of the cathode of the diode D42The cathode of the diode D5 is connected with the DC side midpoint O2The anode of the diode D6 is connected to DC-.
Further, the commutation path in the upper DBC substrate passes through the diode D1 and the diode D6, and the diode D1 and the diode D6 are soldered on the upper DBC substrate by means of nano-silver sintering.
Further, the commutation path in the lower DBC substrate passes through the diode D2, the diode D3, the diode D4, the diode D5 and the silicon carbide MOSFET Q1, and the diode D2, the diode D3, the diode D4, the diode D5 and the silicon carbide MOSFET Q1 are welded on the lower DBC substrate by means of nano-silver sintering.
The invention also provides a method for preparing the silicon carbide power module with the double-sided structure for Vienna rectification, which comprises the following steps:
s1, welding a diode D1 and a diode D6 on an upper DBC substrate in a nano-silver sintering mode, and welding a diode D2, a diode D3, a diode D4, a diode D5 and a silicon carbide MOSFET Q1 on a lower DBC substrate in a nano-silver sintering mode;
s2, bonding wires are punched on the lower DBC substrate, and Kelvin connection of the silicon carbide MOSFET Q1 is achieved;
s3, connecting a copper-molybdenum-copper metal column with the anode of the diode and the source of the silicon carbide MOSFET and connecting a power terminal with the upper DBC substrate and the lower DBC substrate in a nano silver sintering mode;
and S4, assembling the upper DBC substrate and the lower DBC substrate in a designated mode, and enabling the other end of the copper-molybdenum-copper column to be stably connected with the upper DBC substrate or the lower DBC substrate in a nano-silver sintering or welding mode.
Specifically, in step S1, the cathodes of the diode D1 and the diode D6 are connected to the upper DBC substrate by nano-silver sintering, the cathodes of the diode D2, the diode D3, the diode D4, the diode D5, and the drain of the silicon-oxide MOSFET Q1 are connected to the lower DBC substrate by nano-silver sintering, and the thickness of the nano-silver solder is 0.05-0.1 mm.
Specifically, in step S2, the kelvin connection of the silicon carbide MOSFET transistor Q1 is implemented by using an aluminum bonding wire with a diameter less than 5 mil.
Specifically, in step S3, the height of the cu-mo-cu metal pillar is 3mm, and the contact surface between the metal pillar and the chip is smaller than the size of the metal electrode of the chip.
Specifically, in step S4, the thickness of the nano silver solder is 0.1-0.15 mm.
Specifically, the silicon carbide MOSFET and the diode electrode are subjected to re-metallization treatment, and a chromium/silver metal layer with the thickness of 100nm/200nm is added on the electrode in a metal evaporation mode.
Compared with the prior art, the invention has at least the following beneficial effects:
according to the Vienna rectifying double-sided structure silicon carbide power module, the degree of freedom of layout design is greatly improved through the split design of part of ports in the topology, a foundation is provided for the layout design aiming at the optimization of a current conversion loop, a bus-bar type structure is adopted in the structural design, the integral area of the current conversion loop is fully reduced, the parasitic inductance of the loop is greatly reduced, the problems of voltage overshoot and oscillation in the switching process can be effectively inhibited, and the fast switching of a silicon carbide device is facilitated. In addition, the integration of bus decoupling capacitor is also convenient for through the structural design, thereby further improving the overall performance of the module, the double-sided structure can adopt a double-sided heat dissipation mode, the heat dissipation efficiency is greatly improved, further the design requirement on the heat dissipation system is reduced, the volume and the weight of the heat dissipation system are reduced, thereby being beneficial to the reduction of the volume and the weight of the whole system, the power density is improved, the driving part of the module adopts Kelvin connection, the decoupling of a driving loop and a power loop is realized, further the switching speed of the module is improved, the reduction of the switching loss is facilitated, and the guarantee is provided for the high-frequency operation of the module.
Furthermore, the chip, the metal column and the DBC substrate copper substrate are connected in a nano-silver sintering mode, so that the overall heat dissipation performance and reliability of the module can be improved, and meanwhile, the high-temperature resistance of the module is also improved.
A method for preparing a silicon carbide power module with a double-sided structure for Vienna rectification is characterized in that a copper-molybdenum-copper composite metal column is adopted to realize connection of a MOSFET source electrode and a diode anode with a copper layer on a DBC substrate, the height of the metal column is changed, the distance between two upper DBC substrates and the distance between two lower DBC substrates can be adjusted, and the voltage withstanding characteristic of the module is further ensured.
Further, the diode D1 and the diode D6 are bonded to the upper DBC substrate by nano-silver sintering, and the diode D2, the diode D3, the diode D4, the diode D5, and the silicon carbide MOSFET Q1 are bonded to the lower DBC substrate by nano-silver sintering. This is advantageous for the next step of the copper-molybdenum-copper composite metal pillar to diode and silicon carbide mosfet process.
Further, the Kelvin connection of the silicon carbide MOSFET is realized by adopting the aluminum bonding wire with the diameter smaller than 5mil, so that the smooth proceeding of the bonding connection can be ensured under the condition that the area of the grid electrode of the silicon carbide MOSFET is smaller, and meanwhile, the switching speed of the silicon carbide MOSFET can be improved by adopting the Kelvin connection mode, so that the switching loss is reduced.
Furthermore, the copper-molybdenum-copper composite metal column is connected with the anode of the diode and the source electrode of the silicon carbide MOSFET in a nano silver sintering mode, and the metal column is adopted for adjusting the distance between the upper DBC layer and the lower DBC layer and ensuring that the module has proper voltage withstanding property.
Furthermore, the upper DBC substrate and the lower DBC substrate are assembled in a designated mode, the other end of the copper-molybdenum-copper column is stably connected with the upper DBC substrate or the lower DBC substrate in a nano-silver sintering or welding mode, and the reliability of the whole module can be improved by adopting the nano-silver sintering mode.
In summary, the invention has the advantages of small loop parasitic inductance, high heat dissipation efficiency, small volume, high switching speed and the like.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
FIG. 1 is a topological structure diagram of a double-sided heat dissipation high power density silicon carbide power module suitable for Vienna rectification according to the present invention;
FIG. 2 is a schematic layout diagram of an upper DBC substrate according to the present invention;
FIG. 3 is a layout diagram of a lower DBC substrate according to the invention;
FIG. 4 is a schematic diagram of the top layer layout and driving resistor location of a partially stacked DBC substrate according to the invention;
FIG. 5 is a process diagram of the present invention;
fig. 6 is a waveform of a switch resulting from a double pulse test of the present invention, wherein (a) is the silicon carbide MOSFET on and (b) is the silicon carbide MOSFET off.
Detailed Description
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The invention provides a silicon carbide power module with a double-sided structure for Vienna rectification, which is characterized in that firstly, the basic distribution condition of a commutation loop is obtained based on the analysis of the basic principle of a Vienna rectifier, and the basic topological structure of the Vienna rectifier is properly modified according to the basic distribution of the commutation loop so as to realize the optimal design of the path of the commutation loop. Specifically, the alternating current input end and the direct current side midpoint in the topology are respectively split into two parts, so that the degree of freedom of layout design is improved. And finishing the corresponding design of the DBC substrate layout based on the optimized topological structure, wherein the basic principle of the design is to ensure that the areas of all the commutation loops are as small as possible and to keep symmetry. And the copper-molybdenum-copper composite metal column is adopted to realize the connection between the chip source electrode and the copper layer of the DBC substrate, so that the distance between the two layers of DBC substrates is controlled, and the integral voltage resistance of the module is ensured. The driving part of the switching device in the module adopts a Kelvin connection mode, so that the switching speed of the device is improved, and the switching loss is reduced. The connection between different parts is realized by adopting a nano silver sintering mode in the module, and the reliability of the whole module is ensured.
Referring to fig. 1, the Vienna rectifying double-sided structure silicon carbide power module of the present invention adopts a modified Vienna rectifying topology, and includes 6 silicon carbide diodes D1, D2, D3, D4, D5 and D6 rated at 650V, and a silicon carbide MOSFET Q1 rated at 650V; in order to improve the freedom of layout design, compared with the traditional Vienna rectifying topology, the input alternating current port of the modified Vienna rectifying topology is split into AC1And AC2Splitting the midpoint of the DC side into O1And O2(ii) a Two commutation paths (DC + -D1-Q1-D5-O2 and O1-D3-Q1-D6-DC-) in the double-sided structure silicon carbide power module are decoupled from each other, and the path minimization of the commutation loops is realized by respectively designing the paths of the two commutation loops; according to the guiding principle, the module design is completed.
The grid of the silicon carbide MOSFET Q1 is connected with the driving grid G, the drain is divided into three paths, and the three paths are respectively connected with the anode of the diode D1, the cathode of the diode D2 is connected with the cathode of the diode D3, the cathode of the diode D1 is connected with DC +, and the anode of the diode D2 is connected with an AC input port1The anode of the diode D3 is connected with the DC side midpoint O1(ii) a The source electrode of the silicon carbide MOSFET Q1 is divided into four paths, one path is connected with the driving source electrode K, the remaining three paths are respectively connected with the anode of the diode D4, the anode of the diode D5, the cathode of the diode D6 and the cathode of the diode D4, and the AC input port is arranged at the AC input port of the cathode of the diode D42The cathode of the diode D5 is connected with the DC side midpoint O2The anode of the diode D6 is connected to DC-.
Referring to fig. 2, fig. 3 and fig. 4, the double-sided silicon carbide power module is entirely of a bus-bar type double-sided structure, and the driving portion is connected in kelvin by using bonding wires; the design method comprises an upper DBC substrate and a lower DBC substrate, wherein each DBC substrate comprises two copper layers, one copper layer is used for realizing the layout of the design, and the other copper layer keeps complete without modification. Schematic diagrams of copper layers containing layout designs in the upper and lower DBC substrates are shown in fig. 2 and 3. The overall appearance of the module and the distribution of the circumscribed segments are shown in fig. 4.
Referring to fig. 5, the processing procedure of the silicon carbide power module with double-sided structure for Vienna rectification according to the present invention is as follows:
s1, respectively welding the diode D1 and the diode D6 to a copper layer of an upper DBC substrate in a nano-silver sintering mode, wherein the specific positions are shown in a shaded portion of figure 2, and respectively welding the diode D2, the diode D3, the diode D4, the diode D5 and the silicon carbide MOSFET tube Q1 to a lower DBC substrate in a nano-silver sintering mode, wherein the specific positions are shown in a shaded portion of figure 3.
The upper DBC substrate and the lower DBC substrate are both alumina ceramic substrates, the thickness of the alumina insulating layer is less than 0.635mm, and the thickness of the copper layers on two sides is greater than 0.3 mm. The overall length and width of the upper and lower DBC substrates are the same, 37mm and 25mm respectively.
6 positioning holes H are respectively processed on the upper DBC substrate and the lower DBC substrate1-H6And h1-h6And the positioning function is performed when the upper and lower DBC substrates are integrally assembled, as shown in fig. 2 and 3.
The thickness of the nano silver solder in the welding process is 0.05-0.1 mm;
s2, respectively connecting the grid and the source of the silicon carbide MOSFET with copper layers C1 and C2 on a lower DBC substrate through aluminum bonding wires with the diameter smaller than 5mil, and realizing Kelvin connection of a silicon carbide MOSFET tube Q1 as shown in FIG. 3;
s3, connecting a copper-molybdenum-copper metal column with an anode of a diode and connecting power terminals with an upper DBC substrate and a lower DBC substrate in a nano silver sintering mode, wherein all the power terminals are copper sheets with the thickness of 0.8mm, the length of 15mm and the width of 4 mm;
the height of the copper-molybdenum-copper metal column is 3mm, and meanwhile, the contact surface of the metal column and the chip is smaller than the size of a metal electrode of the chip.
S4, positioning the positioning hole H in the upper DBC1-H6Are respectively connected with the positioning holes h on the lower DBC substrate1-h6And aligning to realize the integral assembly of the upper DBC and the lower DBC, then stably connecting the other end of the copper-molybdenum-copper metal column with the upper DBC substrate or the lower DBC substrate in a nano-silver sintering or welding mode, wherein the thickness of the nano-silver solder is 0.1-0.15 mm, and the reliable connection of the metal column and the copper layer of the DBC substrate is ensured.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 6, the switching waveforms obtained by applying the module of the present invention to the Vienna rectifier and performing the double pulse test have the following parameter values:
Figure BDA0002519099140000091
Figure BDA0002519099140000101
the 50A current can be safely cut off under the condition that the bus voltage is 350V, and the requirements of the Vienna rectifier are met. The voltage overshoot at two ends of the silicon carbide MOSFET in the turn-off process is small and is only 35V, which shows that the parasitic inductance in a commutation loop of the module is small. While the overall size of the module prototype is close TO the overall size of a single device packaged in TO247, which contains a total of 7 active devices, this greatly increases the power density. In addition, when the module is applied to the Vienna rectifier with the parameters as shown in the table above, the highest junction temperature of all chips in the module can be ensured to be below 120 ℃ by adopting a double-sided water-cooling heat dissipation mode, and the module is proved to have good heat dissipation characteristics.
In summary, the invention provides a silicon carbide power module with a double-sided structure for Vienna rectification, which increases the degree of freedom of module layout design by splitting the alternating current input end and the midpoint of the direct current side, and provides a larger space for the optimal design of a commutation loop; meanwhile, the parasitic inductance of a loop is greatly reduced by the bus bar type structure, the problems of voltage overshoot and oscillation in the switching process are effectively inhibited, and in addition, double-sided heat dissipation can be realized by the module, so that the heat dissipation efficiency is greatly improved; the use of Kelvin connection effectively improves the switching speed of the device, reduces the switching loss and is beneficial to the application of the module under the condition of high switching frequency; the module adopts a nano silver sintering mode to replace the traditional welding, thereby greatly improving the heat dispersion and reliability of the whole module and simultaneously ensuring that the module has the characteristic of high temperature resistance.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.

Claims (9)

1. The silicon carbide power module with the double-sided structure for Vienna rectification is characterized in that a mother-row double-sided structure is adopted, the silicon carbide power module comprises an upper DBC substrate and a lower DBC substrate, each DBC substrate comprises two copper layers, a Vienna rectification topology circuit is arranged on one copper layer, and an input alternating current end of the Vienna rectification topology circuit comprises AC1And AC2The midpoint of the DC side includes O1And O2(ii) a A bonding wire is arranged on the lower DBC substrate to realize Kelvin connection of the driving part; the minimization of a commutation loop path is realized by mutually decoupling two commutation paths in a double-sided structure silicon carbide power module, the Vienna rectification topology circuit comprises a silicon carbide MOSFET tube Q1, the grid electrode of the silicon carbide MOSFET tube Q1 is connected with a driving grid electrode G, the drain electrodes of the silicon carbide MOSFET tube Q1 are divided into three paths and respectively connected with the anode of a diode D1, the cathode of the diode D2 is connected with the cathode of a diode D3, the cathode of the diode D1 is connected with DC +, and the anode of a diode D2 is connected with an AC input port1The anode of the diode D3 is connected with the DC side midpoint O1(ii) a The source electrode of the silicon carbide MOSFET Q1 is divided into four paths, one pathThe driving source K is connected, the rest three paths are respectively connected with the anode of the diode D4, the anode of the diode D5, the cathode of the diode D6 and the cathode of the diode D4, and the AC input port is connected with the cathode of the diode D42The cathode of the diode D5 is connected with the DC side midpoint O2The anode of the diode D6 is connected to DC-.
2. The Vienna rectifying double-sided silicon carbide power module as claimed in claim 1, wherein the current commutating path in the upper DBC substrate passes through diode D1 and diode D6, and diode D1 and diode D6 are soldered on the upper DBC substrate by means of nano-silver sintering.
3. The Vienna rectifying double-sided silicon carbide power module as claimed in claim 1, wherein the current commutating path in the lower DBC substrate passes through diode D2, diode D3, diode D4, diode D5 and silicon carbide MOSFET transistor Q1, and diode D2, diode D3, diode D4, diode D5 and silicon carbide MOSFET transistor Q1 are soldered on the lower DBC substrate by means of nano-silver sintering.
4. A method for preparing a double-sided silicon carbide power module for Vienna rectification in accordance with claim 1, comprising the steps of:
s1, welding a diode D1 and a diode D6 on an upper DBC substrate in a nano-silver sintering mode, and welding a diode D2, a diode D3, a diode D4, a diode D5 and a silicon carbide MOSFET Q1 on a lower DBC substrate in a nano-silver sintering mode;
s2, bonding wires are punched on the lower DBC substrate, and Kelvin connection of the silicon carbide MOSFET Q1 is achieved;
s3, connecting a copper-molybdenum-copper metal column with the anode of the diode and the source of the silicon carbide MOSFET and connecting a power terminal with the upper DBC substrate and the lower DBC substrate in a nano silver sintering mode;
and S4, assembling the upper DBC substrate and the lower DBC substrate in a designated mode, and enabling the other end of the copper-molybdenum-copper column to be stably connected with the upper DBC substrate or the lower DBC substrate in a nano-silver sintering or welding mode.
5. The method of claim 4, wherein in step S1, cathodes of the diode D1 and the diode D6 are connected with the upper DBC substrate through nano-silver sintering, cathodes of the diode D2, the diode D3, the diode D4 and the diode D5 are connected with a drain of the silicon-oxide MOSFET Q1 with the lower DBC substrate through nano-silver sintering, and a thickness of the nano-silver solder is 0.05-0.1 mm.
6. The method of claim 4, wherein in step S2, the Kelvin connection of the silicon carbide MOSFET transistor Q1 is implemented using an aluminum bonding wire having a diameter of less than 5 mil.
7. The method of claim 4, wherein in step S3, the height of the Cu-Mo-Cu metal pillar is 3mm, and the contact surface of the metal pillar and the chip is smaller than the size of the metal electrode of the chip.
8. The method according to claim 4, wherein in step S4, the thickness of the nano-silver solder is 0.1-0.15 mm.
9. The method of claim 4, wherein the silicon carbide MOSFET and the diode electrodes are re-metallized by adding a layer of chromium/silver metal having a thickness of 100nm/200nm to the electrodes by metal evaporation.
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