CN111446874A - Single-phase boost common-mode inverter and modulation method thereof - Google Patents
Single-phase boost common-mode inverter and modulation method thereof Download PDFInfo
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- CN111446874A CN111446874A CN202010372511.1A CN202010372511A CN111446874A CN 111446874 A CN111446874 A CN 111446874A CN 202010372511 A CN202010372511 A CN 202010372511A CN 111446874 A CN111446874 A CN 111446874A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
Abstract
The invention discloses a single-phase boosting common-mode inverter and a modulation method thereof. The single-phase boost common-mode inverter comprises a switching tube S1Pressure increasing unit of S1The drain of (1) is the positive output terminal of the boosting unit, S1The source of the voltage boosting unit is the negative output end of the voltage boosting unit and is directly connected to the negative electrode of the direct current power supply; also comprises a switch tube S2、S3、S4、S5And bus capacitance, S2Is connected to S1Of the drain electrode, S2Is connected to S3Of the drain electrode, S3Is connected to S4Of the drain electrode, S4Is connected to S5Source of (2), S5Is connected to S1The two ends of the bus capacitor are respectively connected to S2And S5OfA pole; s1、S2、S3、S4And S5The two ends of the diode are also respectively connected with a diode in an anti-parallel way; s3Source and S of5Is the output of the inverter. Compared with the prior art, the direct current side and the alternating current side of the invention are grounded, thus fundamentally eliminating leakage current, having single-stage boosting capability, increasing the utilization rate of a direct current bus and reducing the voltage stress of a bus capacitor.
Description
Technical Field
The invention relates to the field of inverters, in particular to a single-phase boost common-mode inverter and a modulation method thereof.
Background
Solar energy is a clean and pollution-free renewable energy source, has the advantages of low cost, wide distribution and the like, and is widely used. Photovoltaic power generation is one of effective forms of utilizing solar energy, and a photovoltaic inverter is also very important as a bridge for energy conversion therein. In a non-isolated system, the photovoltaic inverter is not electrically isolated from a power grid, and a grounding capacitor exists between the photovoltaic array and the ground, so that a current loop can be formed between the grounding parasitic capacitor and the power grid as well as the ground, and leakage current is generated. The existence of leakage current can cause current distortion, so that electrical equipment generates electromagnetic interference and the personal safety is threatened.
Conventional single-phase bridge inverters are one of the well-established inversion topologies in photovoltaic systems. However, the bridge inverter has a problem that the peak value of the output ac voltage is lower than the dc input voltage. To meet the requirements of wide voltage range applications, an additional boost converter is generally required in the front stage. However, the conventional two-stage power conversion structure increases the complexity of the system, reduces the conversion efficiency, and increases the cost. Therefore, inverter topologies with single stage boost capability are the focus of research. The problem of leakage current caused by high-frequency voltage change at two ends of a grounding parasitic capacitor is mainly solved by the following steps: the method adopts a proper modulation technology to reduce the change rate of the common-mode voltage or keep the common-mode voltage constant all the time, but usually at the cost of reducing the utilization rate of a direct-current bus; the direct current or alternating current bypass is added, so that when the circuit works in a follow current zero state, the direct current side and the alternating current side are decoupled, and a path through which leakage current flows is blocked, however, the structure is complicated and the control difficulty is increased due to the addition of the additional bypass; the direct current and alternating current side common ground inversion topological structure is adopted, so that the potential difference between two ends of the parasitic capacitor is always zero, common mode leakage current can be eliminated fundamentally, and the problem of leakage current is solved.
Disclosure of Invention
The invention aims to provide a single-phase boost common-mode inverter and a modulation method thereof.
The technical scheme of the invention is as follows:
a single-phase boost common-mode inverter comprises a boost unit, wherein the boost unit comprises a switch tube S1，S1The drain of (1) is the positive output terminal of the boosting unit, S1The source of the voltage boosting unit is the negative output end of the voltage boosting unit and is directly connected to the negative electrode of the direct current power supply; also comprises a switch tube S2、S3、S4、S5And bus capacitance, S2Is connected to S1Of the drain electrode, S2Is connected to S3Of the drain electrode, S3Is connected to S4Of the drain electrode, S4Is connected to S5Source of (2), S5Is connected to S1The two ends of the bus capacitor are respectively connected to S2And S5A source electrode of (a); s1、S2、S3、S4And S5The two ends of the diode are also respectively connected with a diode in an anti-parallel way; s3Source and S of5Is the output of the inverter.
Further, the boosting unit is a quadratic boosting unit.
Further, the boosting unit is a switch inductor boosting unit.
Further, the boosting unit is a quasi-Z source boosting unit.
The modulation method of the inverter is that the switching tube S is controlled by the modulation wave obtained by superposing the third harmonic of the k-times amplitude of the sine wave and taking the absolute value of the negative half period1、S2、S3、S4And S5(ii) a Wherein the value range of k is 0.15-0.2.
Further, k is 1/6.
Compared with the prior art, the direct current side and the alternating current side of the invention are grounded, thus fundamentally eliminating leakage current, having single-stage boosting capability, increasing the utilization rate of a direct current bus and reducing the voltage stress of a bus capacitor.
Drawings
Fig. 1 is a circuit diagram of a single-phase quadratic boost common mode inverter.
Fig. 2 is a circuit diagram of a single-phase switched inductor boost common mode inverter.
Fig. 3 is a circuit diagram of a single-phase quasi-Z-source boost common-mode inverter.
Fig. 4 is a modulation waveform diagram of the single-phase quadratic boost common mode inverter.
Fig. 5 is an equivalent circuit diagram of the single-phase quadratic boost common mode inverter in mode a.
Fig. 6 is an equivalent circuit diagram of the single-phase quadratic boost common mode inverter in mode B.
Fig. 7 is an equivalent circuit diagram of the single-phase quadratic boost common mode inverter in the mode C.
Fig. 8 is an equivalent circuit diagram of the single-phase quadratic boost common mode inverter in the mode D.
Fig. 9 is a diagram of the maximum output voltage gain and boost duty cycle of a single-phase quadratic boost common mode inverter.
FIG. 10 is a graph of bus capacitance to voltage stress ratio of a single-phase quadratic boost common mode inverter under the modulation of the present invention and the existing modulation.
Detailed Description
The single-phase boost common-mode inverter can adopt various boost units, such as a quadratic boost unit, a switch inductor boost unit and a quasi-Z source boost unit, and can obtain similar effects.
The single-phase quadratic boost common-mode inverter is formed by quadratic boost units, and comprises an inductor L as shown in FIG. 11、L2Capacitor C1、C2Switching tube S1、S2、S3、S4、S5Diode D1、D2、D3、D4、D5、D6、D7。
The concrete connection mode is as follows: DC input power supply VinPositive electrode of (2) and inductor L1Is connected to one end of an inductor L1Another terminal of (1) and a diode D1Anode of (2), diode D2Is connected to the anode of diode D1Cathode and capacitor C1Positive electrode of (8), inductor L2Is connected to one end of a diode D2Cathode and inductor L2Another end of (1), a switching tube S1Drain electrode of (1), and switching tube S2Is connected to the source electrode of the switching tube S2Drain electrode and capacitor C2Positive electrode of (2), switching tube S3Is connected to the drain of the switching tube S3Source electrode and switch tube S4Drain electrode of (1), load ZLoadIs connected to a capacitor C2Negative electrode of (2) and switching tube S4Source electrode and switch tube S5Is connected to the source of diode D3Respectively with the anode and cathode of the switching tube S1Is connected to the source and drain of, a diode D4Respectively with the anode and cathode of the switching tube S2Is connected to the source and drain of, a diode D5Respectively with the anode and cathode of the switching tube S3Is connected to the source and drain of, a diode D6Respectively with the anode and cathode of the switching tube S4Is connected to the source and drain of, a diode D7Respectively with the anode and cathode of the switching tube S5Is connected with the drain electrode of the transistor, and a direct current input power supply VinNegative electrode of (1) and capacitor C1Negative electrode of (2), switching tube S1Source electrode and switch tube S5Drain electrode of (1), load ZLoadThe other ends of which are connected together to earth.
The single-phase switch inductor boost common mode inverter is formed by adopting a switch inductor boost unit, as shown in fig. 2.
A single-phase quasi-Z-source boost common-mode inverter is formed by adopting a quasi-Z-source boost unit, as shown in FIG. 3.
The modulation method of the inverter is that the switching tube S is controlled by the modulation wave obtained by superposing the third harmonic of the k-times amplitude of the sine wave and taking the absolute value of the negative half period1、S2、S3、S4And S5. Wherein, considering the direct current voltage utilization rate and the harmonic distortion degree, k is generally 0.15-0.2. When k is 1/6, the modulation depthThe value range is maximum, and the maximum value can reach the value before injection
The direct current bus utilization rate is highest.
The technical effect of the single-phase boost common-mode inverter will be further described below by taking the single-phase quadratic boost common-mode inverter as an example in combination with third harmonic modulation based on injection of one sixth amplitude.
As shown in fig. 1, the single-phase quadratic boost common-mode inverter topology has small earth impedance, the dc side and the ac side are grounded, and the potential difference between the two ends of the parasitic capacitor is zero, so that the common-mode leakage current can be suppressed to zero, and the leakage current problem can be fundamentally solved.
Fig. 4 is a modulation waveform diagram of the single-phase quadratic boost common mode inverter. In FIG. 4, the triangular carrier VtriPeak value of Vtri,p(ii) a A DC reference voltage of Vref(ii) a Modulated wave VmIn order to superpose the third harmonic of one sixth amplitude on the basis of sine wave, the expression is
Peak value of VM,p. In the positive half period of the modulated wave, when V is satisfiedtri＞VrefWhen the inverter works in the mode C; when V is satisfiedm≤Vtri≤VrefWhen the inverter works in the mode B; when V is satisfiedm＞VtriAt this time, the inverter operates in mode a. In the negative half period of the modulating wave, the positive and negative reversal is carried out, i.e. the absolute value | V is takenmWhen V is satisfied |tri＞VrefWhen the inverter works in the mode C; when | V is satisfiedm|≤Vtri≤VrefWhen the inverter works in the mode B; when | V is satisfiedm|＞VtriAt time, the inverter operates in mode D.
Mode A as shown in FIG. 5, controls the switch tube S1Switch tube S3And a switching tube S5Conducting, switching tube S2And a switching tube S4Turn off when diode D2Is conducted by bearing forward voltage and diode D1Due to inverse parallel connection atInductor L2The two ends bear reverse voltage and are cut off. DC input power supply VinIs an inductor L1Charging, capacitance C1To inductor L2Discharge, capacitance C2Through a switching tube S3And a switching tube S5To the load ZLoadAnd (4) discharging. The corresponding electrical parameter relation under the working state is as follows:
vL1＝VinvL2＝VC1vo＝VC2(1)
mode B as shown in FIG. 6, controls the switch tube S1Switch tube S4And a switching tube S5Conducting, switching tube S2And a switching tube S3Turn off when diode D2Is conducted by bearing forward voltage, diode D1Due to being connected in anti-parallel with the inductor L2The two ends bear reverse voltage and are cut off. DC input power supply VinIs an inductor L1Charging, capacitance C1To inductor L2And (4) discharging. Capacitor C2The negative end passes through the switch tube S5Grounding, the positive polarity end is in a suspension state, and a load ZLoadThe potential difference between the two ends is zero, and zero voltage is output. The corresponding electrical parameter relation under the working state is as follows:
vL1＝VinvL2＝VC1vo＝0 (2)
mode C As shown in FIG. 7, the switching tube S is controlled2Switch tube S4And a switching tube S5Conducting, switching tube S1And a switching tube S3Turn off when diode D1Is conducted by bearing forward voltage and diode D2Due to parallel connection with the inductor L2Inductor L cut off by reverse voltage1To the capacitor C1And a capacitor C2Side discharge, inductor L2Is a capacitor C2Charging, load ZLoadThe potential difference between the two ends is zero, and zero voltage is output. The corresponding electrical parameter relation under the working state is as follows:
vL1＝Vin-VC1vL2＝VC1-VC2vo＝0 (3)
mode D as shown in FIG. 8, controlling the switch tube S1Switch tube S2And a switching tube S4Conducting, switching tube S3And a switching tube S5Turn off when diode D2Is conducted by bearing forward voltage and diode D1Due to being connected in anti-parallel with the inductor L2The two ends bear reverse voltage and are cut off. DC input power supply VinIs an inductor L1Charging, capacitance C1To inductor L2Discharge, capacitance C2To the load ZLoadAnd (4) discharging. The corresponding electrical parameter relation under the working state is as follows:
vL1＝VinvL2＝VC1vo＝-VC2(4)
assuming a switching period of TsThe time of the inverter working in the mode A, the mode B, the mode C and the mode D is T respectively1、T2、T3、T4Thus T1+T2+T3+T4＝TsAs shown in fig. 4, inverter boost duty cycle, inductance L1The charging time ratio is D, the modulation depth is M, and the following can be obtained:
from the above analysis of the operating conditions, the inductance L1And inductor L2Respectively applying volt-second balance principle to analyze the relationship between circuit electrical parameters under the steady state condition, according to the volt-second balance principle, inductor L1The average voltage of the inductor in one period is zero, and the average voltage comprises:
Vin×(T1+T2+T4)+(Vin-VC1)×T3＝0 (7)
the capacitance C can be obtained by substituting the formula 5 into the formula 71Voltage VC1As follows
According to inductance L2The average voltage of the inductor is zero in one period, and the average voltage is as follows:
VC1×(T1+T2+T4)+(VC1-VC2)×T3＝0 (9)
the capacitance C can be obtained by substituting the formulas 5 and 8 into 92Voltage VC2As follows
In summary, the voltage gain G is
Thus, the AC side output voltage voIs composed of
As can be seen from fig. 4, the modulation wave employs a third harmonic whose sixth amplitude is superimposed on the basis of the sine wave, and the modulation depth M is limited by the boosting duty ratio D, since the boosting duty ratio D needs to satisfy 0<D<1, it can be seen from equation 13 that the maximum modulation depth can be reached
The direct current voltage utilization rate is improved.
The modulation depth M is taken to be maximum
Substituting into equation 11, the maximum voltage gain is obtained as shown in equation 14.Given the boost duty cycle D, the maximum voltage gain curve is shown in fig. 9.
For a given voltage gain G, when a sinusoidal modulation wave is employed, the modulation depth M is limited by the boost duty cycle D, which may take a maximum value D, at which time the voltage stress of the second capacitor, i.e., the bus capacitor, is Vs1As in equation 15; if the modulation wave superposes the third harmonic of one sixth amplitude on the basis of the original sine wave, the modulation depth M takes the maximum value
The second capacitor, i.e. the bus capacitor, has a voltage stress of Vs2As in equation 16. FIG. 10 shows the ratio V of the bus capacitance to the voltage stress in two different modulation methodss1/Vs2And the voltage gain G relation graph shows that the voltage stress ratio is larger than 1, and the capacitance voltage stress is smaller when the modulation wave is a third harmonic wave with one sixth amplitude superposed on the sine wave.
The analysis shows that the single-phase quadratic boost common mode inverter has the advantages of high voltage gain, high direct current bus utilization rate and lower bus capacitance voltage stress by combining the injection of third harmonic modulation of one sixth amplitude, and can fundamentally eliminate leakage current.
Claims (6)
1. A single-phase boost common-mode inverter is characterized by comprising a switching tube S1Pressure increasing unit of S1The drain of (1) is the positive output terminal of the boosting unit, S1The source of the voltage boosting unit is the negative output end of the voltage boosting unit and is directly connected to the negative electrode of the direct current power supply; also comprises a switch tube S2、S3、S4、S5And bus capacitance, S2Is connected to S1Of the drain electrode, S2Is connected to S3Of the drain electrode, S3Is connected to S4Of the drain electrode, S4Is connected to S5Source of (2), S5Is connected to S1The two ends of the bus capacitor are respectively connected to S2And S5A source electrode of (a); s1、S2、S3、S4And S5The two ends of the diode are also respectively connected with a diode in an anti-parallel way; s3Source and S of5Is the output of the inverter.
2. The inverter of claim 1, wherein the boost unit is a quadratic boost unit.
3. The inverter of claim 1, wherein the boost unit is a switched inductor boost unit.
4. The inverter of claim 1, wherein the boost unit is a quasi-Z-source boost unit.
5. The modulation method of an inverter according to claim 1, wherein the switching tube S is controlled by a modulation wave obtained by superimposing a third harmonic of k-fold amplitude with a sine wave and taking an absolute value of a negative half period1、S2、S3、S4And S5(ii) a Wherein the value range of k is 0.15-0.2.
6. The method for modulating an inverter according to claim 5, wherein k is 1/6.
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| CN113258772A (en) * | 2021-05-11 | 2021-08-13 | 西安科技大学 | Secondary buck-boost converter adopting switch inductor |
| CN116827126A (en) * | 2023-03-23 | 2023-09-29 | 广东工业大学 | High-gain boost converter |
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