CN111115563A - Method for stripping functional material by full-dry method - Google Patents
Method for stripping functional material by full-dry method Download PDFInfo
- Publication number
- CN111115563A CN111115563A CN201911338270.2A CN201911338270A CN111115563A CN 111115563 A CN111115563 A CN 111115563A CN 201911338270 A CN201911338270 A CN 201911338270A CN 111115563 A CN111115563 A CN 111115563A
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- photoresist
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- dry
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0183—Selective deposition
- B81C2201/0187—Controlled formation of micro- or nanostructures using a template positioned on a substrate
Abstract
The invention discloses a method for stripping a functional material by an all-dry method. According to the invention, the substrate is modified to reduce the adhesive force between the photoresist and the substrate, then a required structure is exposed on the photoresist, the functional material is plated on a sample after the photoresist is patterned, and the photoresist and the functional material thereon are selectively torn off by using the adhesive layer, so that the inverse structure of the functional material after the patterning is left, namely, the existing wet stripping scheme is replaced, and the high-precision green dry stripping is realized.
Description
The technical field is as follows:
the invention relates to a method for stripping a functional material by an all-dry method, which can be used in the fields of micro-nano manufacturing, optics, electricity, radio, biology, MEMS and NEMS.
Technical background:
the functional material stripping process is a common photoetching corrosion process in the micro-nano manufacturing process. The basic process is to coat photoresist on a substrate, expose and develop, take the photoresist with a certain pattern as a mask, evaporate the functional material required by the photoresist, and then remove the photoresist by using organic solvent (commonly N-methyl pyrrolidone, acetone). Meanwhile, the functional material on the top of the resist is separated along with the resist, and only the functional material with the original pattern reverse structure is left on the substrate. The functional material stripping process (i.e., lift-off process) has a high requirement on the steepness of the photoresist edge, and the ratio of the photoresist thickness to the functional material thickness is generally required to be greater than 3:1, because if the photoresist sidewall is not vertical, particularly if the photoresist cross section is in a regular trapezoid shape or the thickness of the photoresist is very thin relative to the thickness of the functional material, a wall hanging phenomenon is very easy to occur (i.e., the sidewall of the photoresist is also evaporated with the functional material, so that the functional material on the photoresist and the functional material on the place without the photoresist are connected together), thereby causing the failure of functional material stripping, and meanwhile, some materials or substrates are damaged in the wet stripping process, which greatly affects the development of micro-nano manufacturing and related fields.
HMDS: hexamethyldisilazane.
The invention content is as follows:
in order to overcome the technical problems, the invention discloses a method for stripping a functional material by an all-dry method, which adopts a new method for stripping the functional material by the all-dry method, can effectively solve the problems of low success rate or poor performance of the prepared structure caused by wall hanging of the functional material or wet stripping, and can effectively avoid the damage to the substrate in the wet corrosion process particularly for the processing of high-precision structures (such as the preparation of micro-nano structure parts with extremely small size and extremely small gaps), quartz, stripped substrates and the like which are easily corroded by hydrofluoric acid. The invention provides an effective solution for the fields of optics, electricity, acoustics, biology, MEM manufacturing, NEMS manufacturing, integrated circuits and the like.
In order to achieve the technical effects, the technical scheme of the invention is as follows:
a method for stripping a functional material by an all-dry method comprises the following steps:
step one, providing a substrate and cleaning;
step two, spin-coating photoresist on the substrate to obtain a photoresist film;
step three, photoetching, namely processing a designed pattern on the photoresist;
step four, plating a layer of functional material by taking the photoresist as a mask to obtain a sample plated with the functional material; the thickness of the functional material is smaller than that of the photoresist;
step five, covering a layer of adhesive layer on the sample coated with the functional material;
step six, uncovering the pasting layer, and completely stripping the photoresist and the functional material on the photoresist by the pasting layer to prepare the micro-nano structure;
the adhesive force between the adhesive layer and the functional material and the adhesive force between the photoresist and the functional material are both larger than the adhesive force between the photoresist film and the substrate.
In a further improvement, in the first step, after the substrate is cleaned, the surface of the substrate is modified with the photoresist anti-sticking layer to reduce the adhesion between the substrate and the photoresist.
The further improvement is that the method for modifying the photoresist anti-sticking layer on the surface of the donor substrate adopts a high-temperature gas modification method or a vacuum-pumping gas modification method; the high-temperature gas modification method comprises the following steps: placing the substrate and the photoresist anti-sticking agent in a closed space, wherein the temperature of the closed space is controlled to be between 60 and 800 ℃, preserving heat for more than 1 minute, and directly taking out the substrate;
the vacuum-pumping gas modification method comprises the following steps: and placing the substrate and the photoresist antisticking agent in a closed space, vacuumizing the closed space until the photoresist antisticking layer is gasified, keeping for more than 1 minute, and directly taking out the substrate. In a further improvement, the photoresist anti-stiction layer comprises HMDS and n-octyldodecyl tridecafluoride; the photoresist anti-sticking layer is plated on the surface of the substrate.
In a further improvement, the substrate is made of silicon, silicon oxide, quartz, glass, silicon nitride, silicon carbide, lithium niobate, diamond, sapphire or ITO.
In a further improvement, the photoresist comprises PMMA, ZEP, Rayleigh glue, AZ glue, nanoimprint glue and light-cured glue; the thickness of the photoresist is 1nm-100 mm.
In the third step, the method for processing the designed pattern comprises electron beam exposure, ion beam exposure, focused ion beam exposure, heavy ion exposure, X-ray exposure, plasma etching, ultraviolet lithography, extreme ultraviolet lithography, laser direct writing and nanoimprint.
In a further improvement, the functional material comprises metal and nonmetal; the metal includes pure metals and alloys; pure metals include gold, silver, aluminum, copper, chromium, titanium, and nickel; alloys include nichrome, silicon carbide and silicon nitride; non-metals include silicon oxide and semiconductors; the semiconductor includes silicon and germanium.
In a further improvement, the adhesive layer comprises PDMS, ultraviolet curing adhesive, heat release adhesive, high temperature adhesive tape, common adhesive tape, PVA, cellulose and AB glue.
The micro-nano structure prepared by the full-dry method functional material stripping method is used for micro-nano manufacturing, the optical field, the electrical field, the biological field, the MEMS field or the NEMS field.
The method has the advantages that the bottleneck that the existing wet method functional material is low in success rate, the substrate material is limited, the size and the precision of the micro-nano structure are difficult to meet the existing requirements and the like is solved, the method not only can realize any structure which can be prepared by wet method stripping, but also can break through the limitations of low success rate of the traditional wet method lift-off, limitation on the substrate of a sample, limitation on the preparation of the nano structure with extremely small size, extremely high precision and extremely high density, and limitation that the ratio of the photoresist thickness to the functional material is better than 3: 1. The invention provides a new effective solution for the fields of micro-nano manufacturing, optics, electricity, acoustics, biology, MEMS manufacturing, NEMS manufacturing, integrated circuits and the like.
Drawings
FIG. 1 is a structural diagram of a functional material nanopore prepared by the present invention;
FIG. 2 is a structural diagram corresponding to step three in example 1;
FIG. 3 is a structural diagram corresponding to step four in example 1;
FIG. 4 is a structural diagram corresponding to step five of embodiment 1
FIG. 5 is a structural diagram corresponding to step six in embodiment 1;
FIG. 6 is a structural diagram corresponding to step seven in embodiment 1;
FIG. 7 is a schematic structural view of step two in example 2;
FIG. 8 is a schematic structural view of step three in example 2;
FIG. 9 is a schematic structural view of step four in example 2;
FIG. 10 is a schematic structural view of step five in example 2;
fig. 11 is a schematic structural diagram of step six in example 2.
The structure comprises a photoresist 1, a substrate 2, a functional material 3 and an adhesive layer 4.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Example 1
An all-dry functional material stripping method comprises the following steps:
step one, providing a substrate and cleaning
Step two, using HMDS to modify the substrate by a high-temperature gas modification method, namely plating a photoresist anti-sticking layer on the surface of the substrate;
and thirdly, spin-coating a positive photoresist PMMA on the substrate by using a spin-coating method to obtain a film, as shown in FIG. 2.
And step four, processing the designed pattern on the photoresist, as shown in fig. 3.
And step five, plating a layer of functional material on the substrate by taking the patterned photoresist as a mask, as shown in fig. 4.
And step six, covering a layer of adhesive layer on the sample coated with the functional material, as shown in fig. 5.
And step seven, uncovering the sticking layer, and simultaneously stripping the patterned photoresist and the functional material on the photoresist cleanly, so that only the functional material with the inverse structure of the original pattern is left on the substrate, as shown in fig. 6.
Example 2
An all-dry functional material stripping method comprises the following steps:
step one, providing a substrate and cleaning
And step two, coating the substrate with a photo-curing adhesive by a spin coating method to obtain a thin film, as shown in fig. 7.
And step three, processing the designed pattern on the photoresist, as shown in fig. 8.
And step four, plating a layer of functional material on the substrate by taking the patterned photoresist as a mask, as shown in fig. 9.
And step five, covering a layer of adhesive layer on the sample coated with the functional material, as shown in fig. 10.
And step six, uncovering the adhesive layer, and simultaneously stripping the patterned photoresist and the functional material on the photoresist cleanly, so that only the functional material with the inverse structure of the original pattern is left on the substrate, as shown in fig. 11.
The above-mentioned embodiments are merely specific embodiments of the present invention, and are not intended to limit the present invention, and simple modifications and substitutions thereof are also within the scope of the present invention.
Claims (10)
1. A method for stripping a functional material by an all-dry method is characterized by comprising the following steps:
step one, providing a substrate and cleaning;
step two, spin-coating photoresist on the substrate to obtain a photoresist film;
step three, photoetching, namely processing a designed pattern on the photoresist;
step four, plating a layer of functional material by taking the photoresist as a mask to obtain a sample plated with the functional material; the thickness of the functional material is smaller than that of the photoresist;
step five, covering a layer of adhesive layer on the sample coated with the functional material;
step six, uncovering the pasting layer, and completely stripping the photoresist and the functional material on the photoresist by the pasting layer to prepare the micro-nano structure;
the adhesive force between the adhesive layer and the functional material and the adhesive force between the photoresist and the functional material are both larger than the adhesive force between the photoresist film and the substrate.
2. The method for all-dry functional material stripping according to claim 1, wherein in the first step, the photoresist anti-sticking layer is modified on the surface of the substrate after the substrate is cleaned so as to reduce the adhesion between the substrate and the photoresist.
3. The method for stripping functional material by an all-dry method according to claim 2, wherein the step of modifying the photoresist anti-sticking layer on the surface of the donor substrate is a high-temperature gas modification method or a vacuum gas modification method; the high-temperature gas modification method comprises the following steps: placing the substrate and the photoresist anti-sticking agent in a closed space, wherein the temperature of the closed space is controlled to be between 60 and 800 ℃, preserving heat for more than 1 minute, and directly taking out the substrate;
the vacuum-pumping gas modification method comprises the following steps: and placing the substrate and the photoresist antisticking agent in a closed space, vacuumizing the closed space until the photoresist antisticking agent is gasified, keeping for more than 1 minute, and directly taking out the substrate.
4. The method for all-dry functional material lift-off according to claim 2, wherein the photoresist anti-sticking layer comprises HMDS and n-octyldodecyl-trifluoro-silane; the photoresist anti-sticking layer is plated on the surface of the substrate.
5. The method for all-dry functional material exfoliation according to claim 1, wherein the substrate is made of silicon, silicon oxide, quartz, glass, silicon nitride, silicon carbide, lithium niobate, diamond, sapphire, or ITO.
6. The method for all-dry functional material lift-off according to claim 1, wherein the photoresist comprises PMMA, ZEP, rubine glue, AZ glue, nanoimprint glue, and photo-curable glue; the thickness of the photoresist is 1nm-100 mm.
7. The method for all-dry functional material stripping according to claim 1, wherein in the third step, the method for processing the designed pattern comprises electron beam exposure, ion beam exposure, focused ion beam exposure, heavy ion exposure, X-ray exposure, plasma etching, ultraviolet lithography, extreme ultraviolet lithography, laser direct writing and nanoimprinting.
8. The all-dry method functional material exfoliation method as claimed in claim 1, wherein the functional material includes a metal and a nonmetal; the metal includes pure metals and alloys; pure metals include gold, silver, aluminum, copper, chromium, titanium, and nickel; alloys include nichrome, silicon carbide and silicon nitride; non-metals include silicon oxide and semiconductors; the semiconductor includes silicon and germanium.
9. The method for full-dry functional material peeling according to claim 1, wherein the adhesive layer comprises PDMS, UV curable adhesive, heat release adhesive, high temperature adhesive tape, ordinary adhesive tape, PVA, cellulose and AB adhesive.
10. A micro-nano structure prepared by the method for full-dry functional material stripping according to any one of claims 1 to 9, wherein the micro-nano structure is used for micro-nano manufacturing, the optical field, the electrical field, the biological field, the MEMS field or the NEMS field.
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| CN201911338270.2A CN111115563A (en) | 2019-12-23 | 2019-12-23 | Method for stripping functional material by full-dry method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111693906A (en) * | 2020-06-24 | 2020-09-22 | 电子科技大学 | Method for processing Lorentz force magnetic field sensor of silicon-based cavity optical mechanical system |
| CN113415782A (en) * | 2021-06-17 | 2021-09-21 | 嘉庚创新实验室 | Method for processing positive structure based on focused ion beam etching and application |
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