CN111106252B - Application of cathode interface material, three-dimensional composite material and preparation method thereof, and photoelectric device and preparation method thereof - Google Patents
Application of cathode interface material, three-dimensional composite material and preparation method thereof, and photoelectric device and preparation method thereof Download PDFInfo
- Publication number
- CN111106252B CN111106252B CN201911266582.7A CN201911266582A CN111106252B CN 111106252 B CN111106252 B CN 111106252B CN 201911266582 A CN201911266582 A CN 201911266582A CN 111106252 B CN111106252 B CN 111106252B
- Authority
- CN
- China
- Prior art keywords
- cathode interface
- interface material
- graphene
- dimensional composite
- optoelectronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention relates to the technical field of photoelectric devices, in particular to application of a cathode interface material, a three-dimensional composite material and a preparation method thereof, and a photoelectric device and a preparation method thereof. The cathode interface material can effectively disperse the carbon nano material and reduce the aggregation of the carbon nano material. Meanwhile, the three-dimensional composite material formed by dispersing the carbon nano material in the cathode interface material solution can obviously improve the photoelectric conversion efficiency of the photoelectric device.
Description
Technical Field
The invention relates to the technical field of photoelectric devices, in particular to application of a cathode interface material, a three-dimensional composite material and a preparation method thereof, and a photoelectric device and a preparation method thereof.
Background
Organic solar cells have become one of the most desirable renewable energy technologies. The photovoltaic material based on the organic semiconductor has flexible mechanical properties, a general chemical structure, light weight and low cost. Due to the characteristics, the glass has the potential of becoming energy sources such as transparent power generation glass, zero-emission buildings, new energy vehicles, energy recycling public places and the like. In recent years, with the development of high-efficiency organic semiconductor technology and the advancement of device manufacturing technology, research on organic solar cells has received much attention.
There are two main types of organic semiconductors currently used in photovoltaic devices, small organic molecule acceptor materials and conjugated polymer donor materials. Non-fullerene small molecule acceptors are often chosen as electron acceptor materials, since their processing is well known, their structural plasticity is strong and they are more closely matched to the energy levels of the polymer donor material, making efficient charge transfer easier to achieve. Another key factor in the preparation of high performance organic photovoltaic devices is the use of interface materials. Due to the unique properties and advantages of the alcohol/water soluble interface material, the method comprises the steps of lower work function modification, charge recombination inhibition, effective charge extraction improvement and the like. Are successfully used in electron transport layers for polymer light emitting diodes and organic photovoltaics.
Graphene is a carbon nanomaterial, has high specific surface area, excellent thermal/electrical properties, high carrier mobility and transparency, mechanical flexibility, and compatibility with solution processing, and has been applied to the fields of energy, composite materials, electronics, and the like. Meanwhile, based on the graphene half-metal band structure capable of continuously adjusting the Fermi level, the work function of the graphene half-metal band structure can be adjusted and controlled in a large range. They have high performance in optoelectronic devices and have been improved for use in electrode and interface materials. Therefore, the development of an effective surfactant and a dispersion method are of great significance to the mass production and practical application of the carbon nanomaterial.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The invention aims to provide application of a cathode interface material, a three-dimensional composite material and a preparation method thereof, and a photoelectric device and a preparation method thereof.
In a first aspect, the present invention provides a novel application of a cathode interface material, which can effectively disperse a carbon nanomaterial, particularly graphene, and prevent aggregation thereof.
In a second aspect, the present invention further provides a three-dimensional composite material, which includes a cathode interface material and a carbon nanomaterial, wherein the carbon nanomaterial is uniformly dispersed in a solution of the cathode interface material, and the three-dimensional composite material can effectively improve photoelectric conversion efficiency of a photoelectric device.
In a third aspect, the present invention also provides a method for preparing a three-dimensional composite material, comprising: the carbon nanomaterial is dispersed in a solution of the cathode interface material.
In a fourth aspect, the present invention also provides a method for preparing an optoelectronic device, comprising spin coating the above three-dimensional composite material on a cathode or an active layer.
In a fifth aspect, the present invention also provides a photoelectric device, which is prepared by the above method for preparing a photoelectric device.
The invention has the following beneficial effects: the invention can well disperse the carbon nano material by utilizing the cathode material and can effectively prevent the carbon nano material from gathering. Meanwhile, the three-dimensional composite material prepared by dispersing the carbon nano material in the solution of the cathode interface material can obviously improve the photoelectric conversion efficiency of the photoelectric device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a graph showing the results of detection in Experimental example 1;
FIG. 2 is a graph showing the XPS detection result of Experimental example 2;
FIG. 3 is a graph showing the results of detection of the AFM in Experimental example 2;
FIG. 4 is a graph showing the results of Tyndall effect measurement in Experimental example 2;
FIG. 5 is a Raman spectrum of Experimental example 2;
FIG. 6 is a graph showing the result of XRD detection in Experimental example 2;
FIG. 7 is a schematic view of a theoretical model for calculation of the three-dimensional composite material of example 1;
FIG. 8 is a schematic view of a theoretical model for calculation of the three-dimensional composite material according to example 2;
FIG. 9 is a J-V curve of the conductivity of various materials of Experimental example 4;
FIG. 10 shows AM1.5G,100mW/cm for a solar cell of Experimental example 6 using different cathode interface modification layers 2 J-V curve under illumination;
fig. 11 is a graph of the external quantum efficiency of the solar cells of experimental example 6 using different cathode interface modification layers.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are conventional products which are not indicated by manufacturers and are commercially available.
The features and properties of the present invention are described in further detail below with reference to examples.
First, the present implementation provides a new application of a cathode interface material, which can be used to disperse carbon nanomaterials and effectively prevent the carbon nanomaterials from aggregating.
Specifically, the cathode interface material is selected from any one of the cathode interface materials represented by the following chemical formula:
preferably, R 1 Any one selected from the following structural formulas:
R 2 any one selected from the following structural formulas:
wherein R is 3 Is a side chain containing nitrogen or oxygen;
preferably, R 3 Any one selected from the following structural formulas:
preferably, X is any one of oxygen, bromine and iodine;
preferably, the cathode interface material is selected from any one of the following formulas:
Wherein, the cathode interface material is
Wherein R is 1 When the side chain segment containing nitrogen or oxygen and having a conjugated system is shown, the preparation steps of the cathode interface material comprise: the synthesis was carried out according to the following formula:
Further, the carbon nano material is a graphene material, preferably any one of a carbon nano tube and graphene; optionally, the carbon nanotubes include multi-walled carbon nanotubes and single-walled carbon nanotubes; optionally, the carbon nanotubes comprise heteroatom-doped carbon nanotubes; optionally, the graphene comprises multilayer graphene and single layer graphene; optionally, the graphene comprises heteroatom-doped graphene; most preferably, the carbon nanomaterial is single layer graphene.
In a further pair, when the carbon nano-material is dispersed in the cathode interface material solution, the maximum dispersion concentration of the carbon nano-material is 1.82-2.07mg/mL when the concentration of the cathode interface material is 1 mg/mL. Further illustrates that the cathode interface material can well disperse the carbon nano-material.
Secondly, the embodiment further provides a three-dimensional composite material, which includes the cathode interface material and the carbon nanomaterial, wherein the carbon nanomaterial is uniformly dispersed in a solution of the cathode interface material, and the three-dimensional composite material can effectively improve the photoelectric conversion efficiency of a photoelectric device.
Specifically, due to the unique spatial structure of the cathode interface material and the synergistic effect between the power supply performance of the pi-conjugated aromatic system and the amino side chain, the cathode interface material can well adsorb the carbon nano material, so that the formation of the three-dimensional composite material is ensured.
The cathode interface material and the carbon nanomaterial used in the three-dimensional composite material are the same as those used in the above-described application.
Further, when the carbon nanomaterial is dispersed in the cathode interface material solution and forms a three-dimensional composite material, the mass content of the carbon nanomaterial in the three-dimensional composite material is 1-20%. When the carbon nano material is in the content range, the three-dimensional composite material can be ensured to be capable of remarkably improving the photoelectric conversion efficiency of the photoelectric device.
Further, an embodiment of the present invention further provides a method for preparing a three-dimensional composite material, including: the carbon nanomaterial is dispersed in a solution of cathode interface material. Specifically, the dispersing includes: and mixing the carbon nano material, the cathode interface material and a solvent to form a mixed solution, and then carrying out ultrasonic treatment to disperse the carbon nano material in the solution of the cathode interface material.
Among them, the solvent is an alcohol solvent, preferably a monohydric alcohol solvent, and more preferably an ethanol solvent. The ultrasonic treatment is a treatment performed at a low temperature of not higher than 15 ℃; alternatively, the ultrasonic treatment is a treatment carried out at a temperature of 0 to 15 ℃; alternatively, the ultrasonic treatment is a treatment carried out at a temperature of 0 to 5 ℃; optionally, the time of sonication is 30 minutes or more. The adoption of the conditions is more beneficial to the formation of the three-dimensional composite material, and the performance of the three-dimensional composite material is ensured.
Furthermore, the invention also provides a preparation method of the photoelectric device, which comprises the step of coating the three-dimensional composite material on a cathode or an active layer so as to improve the performance of the cathode or the active layer.
Furthermore, the invention also provides a photoelectric device which is prepared by the preparation method of the photoelectric device. Optionally, the optoelectronic device comprises any one of a battery, a diode, a detector, a capacitor and a photovoltaic device; optionally, the cell comprises a solar cell and an electrochemical cell; optionally, the solar cell comprises any one of a tandem organic solar cell and a perovskite solar cell; optionally, the diode is an organic light emitting diode; optionally, the detector is a photodetector; optionally, the capacitor is a supercapacitor; optionally, the optoelectronic device is an organic photovoltaic device. Preferably, the photovoltaic device has an energy conversion efficiency of 15.6-15.8%.
Example 1
This example provides a three-dimensional composite material (numbered admaffn-G) comprising a cathode interface material and single-layer graphene dispersed in the cathode interface material, wherein the cathode interface material (numbered admaffn) has the following structural formula:
Wherein the loading amount of the single-layer graphene is 10%.
The synthesis process of the cathode interface material is as follows:
(1) Synthesis of the Compound 1-1, 3,5, 7-tetrakis (4- (4, 5-tetramethyl-1, 3, 2-dioxaborane) phenyl) adamantane
A round-bottomed flask was charged with 1,3,5, 7-tetrakis (4-iodophenyl) adamantane (944mg, 1mmol), pinacol diboron ester (1.53g, 6 mmol), potassium acetate (1.5g, 15mmol), pdCl 2 (dppf) (100mg, 0.12mmol), and 15mL of anhydrous DMSO, and the mixture was deoxygenated by displacement of nitrogen for 15 minutes. The reaction was stirred at 80 ℃ for 12 hours, cooled to room temperature, and then 100mL of ice water was added. Extracting the mixture with chloroform, and extracting the organic phase with Na 2 SO 4 And (5) drying. The solvent was removed in vacuo and recrystallized from ethyl acetate/hexane to give compound 1 as a grey solid (645mg, 68%). 1 HNMR(400MHz，CDCl 3 )δ7.80(d，J＝8.0Hz，2H)，7.48(d，J＝8.0Hz，2H)，2.17(s，3H)，1.33(s，12H). 13 CNMR(100MHz，CDCl 3 )δ152.51，135.01，124.48，83.71，46.93，39.49，24.85。
(2) Synthesis of the Compound 2- (9, 9-bis (3' - (N, N-dimethylamine) propyl) -2-bromofluorene
In a glove box under nitrogen atmosphere, 2-bromofluorene (3.0 g, 12mmol), tetrabutylammonium bromide (80 mg) and DMSO (50 mL) were placed in a 250mL two-necked flask. The glove box was then removed and 12mL of aqueous sodium hydroxide and 20mL of 3-dimethylpropyl chloride in DMSO (5.0 g, 32mmol) were injected. The reaction was stirred at 45 ℃ for 12 hours. After the reaction was completed, 50mL of water was added to the mixture to remove water from the systemAn inorganic salt. The product was extracted three times with ethyl acetate, the organic layer was washed with water and brine respectively, dried over anhydrous sodium sulfate, and the solvent was removed under vacuum to give a crude product. Then, the column chromatography is carried out by gradient elution with methanol/dichloromethane (0-10%). Compound 2 is obtained. 1 HNMR(400MHz，CDCl 3 )δ7.68-7.62(m，1H)，7.54(d，J＝8.0Hz，1H)，7.48(s，1H)，7.44(dd，J＝8.0，1.2Hz，1H)，7.32(dt，J＝8.6，3.5Hz，3H)，2.05-1.94(m，20H)，0.81-0.71(m，4H). 13 CNMR(101MHz，CDCl 3 )δ152.38，149.72，140.19，140.07，130.12，127.64，127.17，126.12，122.83，121.12，119.86，59.70，55.01，45.30，37.69，21.99。
(3) Synthesis of ADMAFN
Compound 1 (125mg, 0.3mmol), compound 2 (48mg, 0.05mmol), pd (PPh) were added to a 15mL microwave reaction tube 3 ) 4 (10 mg) catalyst, and potassium carbonate (690mg, 5mmol) were deoxidized for 15 minutes, and the mixture was reacted at 110 ℃ for 5 hours in a microwave reactor. After completion of the reaction, the reaction mixture was cooled to room temperature and extracted three times with toluene (10 mL. Times.3). The organic phase was washed with water and brine three times, respectively, and dried over anhydrous sodium sulfate. After removal of the solvent under vacuum, the crude product was dissolved in dichloromethane and separated by TLC plate on dichloromethane: methanol: triethylamine =100:10:3. 45mg of ADMAFN (51%) as the final product were obtained. 1 HNMR(400MHz，CDCl 3 )δ7.84-7.52(m，8H)，7.40-7.27(m，3H)，2.35(s，3H)，2.12-1.84(m，20H)，0.92-0.73(m，4H). 13 CNMR(100MHz，CDCl 3 )δ150.82，150.35，148.39，140.88，140.41，139.87，139.87，139.60，127.18，127.01，126.10，125.56，122.84，121.35，120.02，119.82，59.83，54.82，47.50，45.26，39.31，37.85，22.03.
The embodiment of the invention also provides a preparation method of the three-dimensional composite material, which comprises the following steps:
0.02 mg of single-layer graphene, 0.2 mg of cathode interface material and 1mL of ethanol are mixed, and then ultrasonic treatment is carried out, wherein the ultrasonic treatment temperature is 0 ℃, and the ultrasonic time is more than 30 minutes.
Example 2
A three-dimensional composite (numbered POSSFN-G) was prepared by referring to the preparation method of example 1, except that the structural formula of the cathode interface material (numbered POSSFN) was as follows
R is
And the synthesis of the cathode interface material is disclosed in the patent number: application No. CN201610817239.7, other materials and operating conditions were all unchanged.
Example 3
The three-dimensional composite material was prepared according to the preparation method of example 1, except that single-layer graphene was replaced with double-layer graphene, and other materials and operation conditions were not changed.
Example 4
The three-dimensional composite material was prepared by referring to the preparation method of example 1, except that the cathode interface material was POSSFN, and other materials and operation conditions were not changed.
Example 5 to example 7
The three-dimensional composite of example 1 was prepared except that the operating conditions during the preparation were different. Specifically, the method comprises the following steps:
example 5: the loading amount of the single-layer graphene is 1%, the ultrasonic temperature is-5 ℃, and the ultrasonic time is more than 30 minutes.
Example 6 the loading of single-layer graphene was 10%, the sonication temperature was 0 ℃ and the sonication time was 30 minutes or more.
Example 7 the loading of single layer graphene was 20%, the sonication temperature was 5 ℃ and the sonication time was 30 minutes or more.
Comparative example 1: the three-dimensional composite was prepared according to the preparation method of example 1, except that: the substance loaded on the single-layer graphene is a linear material poly (p- (N, N-dimethylamino) styrene) (numbered as PSN), and the three-dimensional composite material prepared by using the PSN is numbered as PSN-G.
Comparative example 2: single layer graphene provided for example 1.
Experimental example 1
The dispersion performance of the cathode interface materials of comparative example 1, example 1 and example 2 on graphene was examined
Respectively dispersing graphene in ethanol solutions of the cathode interface materials of comparative example 1, example 1 and example 2, then carrying out ultrasonic treatment, directly carrying out detection after ultrasonic treatment, and calculating the concentration of the graphene at the absorption spectrum of 660 nm.
Referring to fig. 1, it can be seen from fig. 1 that as the concentration of the cathode interface material or the linear material increases, the concentration of the graphene increases first and then decreases. After optimization, the maximum dispersion concentration of the graphene is 1.38mg/mL when the PSN concentration is 4 mg/mL; when the concentration of the ADMAFN is 1mg/mL, the maximum dispersion concentration of the graphene is 1.82mg/mL; when the POSSFN is 1mg/mL, the maximum dispersion concentration of the graphene is 2.07mg/mL. The relatively high concentration dispersibility of the cathode interface material to graphene in an alcohol phase system is very important in many applications where low boiling point green solvents are used.
Experimental example 2
X-ray diffraction (XRD), raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic Force Microscopy (AFM) and the Tyndall effect are used for characterizing the dispersion characteristics of PSN, ADMAFN and POSSFN on graphene.
The detection results are shown in FIGS. 2 to 6. Fig. 2 is a graph showing XPS detection results of graphene; FIG. 3 is a graph showing the result of AFM detection; FIG. 4 is a graph showing the detection result of the Tyndall effect; FIG. 5 is a Raman spectrum; fig. 6 is a diagram of XRD detection results.
From FIG. 2, it can be seen that sp in the graphene lattice 2 The hybrid C = C double bond binding energy peak appears at 284.5eV and dominates. sp 3 The weak binding energy peak of the hybridized C-C single bond appears at 285.3eV, which proves that the defect content of the graphene sheet layer is low.
As can be seen from fig. 3, after ADMAFN dispersion, the graphene has a lateral dimension of about 300nm and a thickness of about 1.24nm. According to the thickness distribution of 50 graphene sheets, the average thickness of most graphene sheets is 1.657nm, and the graphene sheets are mainly single-layer graphene.
Fig. 5 shows a raman spectrum of graphene without a dispersant, that is, a cathode interface material, (b) a raman spectrum of PSN dispersed graphene, (c) a raman spectrum of ADMAFN dispersed graphene, and (d) a raman spectrum of POSSFN dispersed graphene. As can be seen from fig. 5, the D peak due to edge/defect in the graphene lattice appears at 1344cm -1 (ii) is sp 2 The G peak due to hybridized C = C double bond appears at 1583cm -1 Location. The 2D peak appeared at 2689cm -1 The intensity ratio of the G peak, which correlates with the number of layers of graphene, confirms the formation of a small amount of layered graphene in the three-dimensional composite.
As can be seen from fig. 6, the single-layer graphene has a sharp diffraction peak at 26.4 °, whereas the PSN, ADMAFN and POSSFN-dispersed graphene (10 wt% graphene in 1mg/mL cathode interface material solution) does not have any diffraction peak in the range of 10 to 40 °, indicating that few-layer or single-layer graphene is combined.
Experimental example 3
In order to verify that the three-dimensional composite materials of examples 1 to 2 can be theoretically prepared and that the cathode interface material can disperse the carbon nanomaterial, the inventor calculates the adsorption energy of the corresponding cathode interface material on the single-layer graphene and the double-layer graphene and simultaneously performs the preparation by using molecular dynamics and standard periodic boundary conditions and periodic density functional theory. See table 1 and fig. 7-8 for analytical results.
Fig. 7 is a theoretical model of the three-dimensional composite material according to example 1, wherein a in fig. 7 is a schematic side view of the three-dimensional composite material, and b in fig. 7 is a schematic top view of the three-dimensional composite material. Fig. 8 is a theoretical model of the three-dimensional composite material according to example 2, wherein a in fig. 8 is a schematic side view of the three-dimensional composite material, and b in fig. 8 is a schematic top view of the three-dimensional composite material.
TABLE 1
According to the results, the adsorption energy of the cathode interface materials POSSFN (-6.37 eV) and ADMAFN (-4.01 eV) to the single-layer graphene is far larger than that of the linear material PSN (-0.64 eV). Compared with ADMAFN, POSSFN has a larger adsorption energy. The method is characterized in that the unique space structure of the three-dimensional material and the synergistic effect of the power supply performance of a pi-conjugated aromatic system and an amino side chain enable the adsorption energy of the POSSFN material on the surface of graphene to be larger than that of the ADMAFN material with a rigid main core.
Experimental example 4
The conductivity of pure PSN, ADMAFN, POSSFN, the three-dimensional composite materials of the embodiment 1, the embodiment 2 and the comparative example 1 is measured by adopting a space charge current limiting method (SCLC), and the structure of the device is ITO/graphene composite material/Al.
Referring to fig. 9, it can be seen from the results that the insulating materials PSN, ADMAFN and POSSFN become semiconductor materials after the addition of graphene, and the conductivity is increased to 3.05 × 10 -5 S/cm (comparative example 1), 6.09X 10 -5 S/cm (example 1), 1.41X 10 -4 S/cm (example 2).
Experimental example 5
The work functions of the three-dimensional composites of example 1, example 2 and comparative example 1 on various substrates were measured using a scanning kelvin microscope (scanning kelvin probe microscopy). The results are shown in tables 2 to 4.
Table 2 work function of PSN-G with different ratios of graphene measured on different substrates
TABLE 3 work function of ADMAFN-G with different ratios of graphene measured on different substrates
TABLE 4 work function of POSSFN-G with different proportions of graphene measured on different substrates
As can be seen from tables 2-4, the work function of PSN-G on the ITO and evaporated silver electrodes was reduced to 4.06-4.17eV, and the work function on the evaporated silver electrode was reduced to 3.55-3.80eV, the work function of the three-dimensional composite material AMDAFN-G on the ITO and evaporated silver electrodes was reduced by about-0.90 eV, and the work function on the evaporated silver electrode was reduced by about 0.92-1.01eV, and the work function of the three-dimensional composite material POSSFN-G on the ITO, evaporated gold and evaporated silver electrodes was reduced by about 0.40-0.64 eV.
Experimental example 6
A classical active layer system is selected, a donor material adopts PM6, an acceptor material is Y6, the three-dimensional composite materials of the embodiment 1, the embodiment 2 and the comparative example 1 are utilized to prepare photovoltaic devices with the structures of ITO/PEDOT: PSS-GO/PM6: Y6/composite material/Al (100 nm), and then the photoelectric conversion efficiency detection is carried out, and the detection results are shown in the figure 10-figure 11 and the table 5.
TABLE 5 test results
From the above detection results, the energy conversion efficiency (PCE) of the device using aluminum directly as the cathode interface material was 13.55% (Voc =0.842v, jsc = 22.54ma/cm) 2 FF = 71.38%), 14.79% PCE for devices using PSN as cathode interface modification material (Voc =0.845v, jsc =24.49ma/cm 2 FF = 71.47%), a device PCE using ADMAFN as cathode interface modification material of 15.15% (Voc =0.851v, jsc =24.43ma/cm 2 FF = 72.87%), and PCE of devices using POSSFN as cathode interface modification material was 15.03% (Voc =0.853v, jsc =24.24ma/cm 2 FF = 72.66%). When the cathode interface modified composite material containing graphene is used as the cathode interface modified composite materialIn the case of a cathode interface modification layer, the PCE of the PSN-G material is 15.38% (Voc =0.846V, jsc = 24.57mA/cm) 2 FF = 74.01%), PCE of ADMAFN-G material 15.81% (Voc =0.845v, jsc =24.98ma/cm 2 FF = 74.91%), PCE of POSSFN-G material 15.60% (Voc =0.849v, jsc =24.85ma/cm 2 FF = 73.93%), which indicates that the three-dimensional composite material of the present application can improve the photoelectric conversion efficiency of a photovoltaic device.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (41)
1. Use of a cathode interface material for dispersing carbon nanomaterials, wherein:
the cathode interface material is selected from any one of the cathode interface materials represented by the following chemical formula:
the carbon nano material is a graphene material.
2. Use according to claim 1, wherein in the cathode interface material, R is 1 Any one selected from the following structural formulas:
R 2 any one selected from the following structural formulas:
wherein R is 3 Is a side chain containing nitrogen or oxygen.
3. Use according to claim 2, wherein in the cathode interface material, R is 3 Any one selected from the following structural formulas:
4. The use according to claim 3, wherein in the cathode interface material, X is any one of oxygen, bromine and iodine.
5. The use according to claim 4, wherein the cathode interface material is selected from any one of the following formulas:
6. The use according to claim 1, wherein the carbon nanomaterial is any one of carbon nanotubes and graphene.
7. The use according to claim 6, wherein the carbon nanotubes comprise multi-walled carbon nanotubes and single-walled carbon nanotubes.
8. The use according to claim 7, wherein the carbon nanotubes comprise carbon nanotubes containing heteroatom doping.
9. The use of claim 6, wherein the graphene comprises multi-layer graphene and single-layer graphene.
10. The use according to claim 9, wherein the graphene comprises graphene containing heteroatom doping.
11. The use according to claim 1, wherein the carbon nanomaterial is single-layer graphene.
12. The use of claim 1, wherein the use is dispersing the carbon nanomaterial in a solution of the cathode interface material.
13. Use according to claim 12, wherein the solution of cathode interface material is an alcoholic solution of cathode interface material.
14. The use according to claim 13, wherein the solution of cathode interface material is a cathode interface material ethanol solution.
15. The use of claim 14, wherein the maximum dispersion concentration of the carbon nanomaterial is 1.82-2.07mg/mL when the concentration of the cathode interface material is 1 mg/mL.
16. A three-dimensional composite comprising the cathode interface material of any one of claims 2-15 and the carbon nanomaterial, the carbon nanomaterial being uniformly dispersed in a solution of the cathode interface material.
17. The three-dimensional composite material according to claim 16, wherein the carbon nanomaterial comprises 1-20% by mass of the three-dimensional composite material.
18. The method of preparing a three-dimensional composite material according to claim 16 or 17, comprising: the carbon nanomaterial is dispersed in a solution of cathode interface material.
19. The method of claim 18, wherein dispersing comprises: and mixing the carbon nano material, the cathode interface material and a solvent to form a mixed solution, and then carrying out low-temperature ultrasonic treatment to disperse the carbon nano material in the solution of the cathode interface material.
20. The method of claim 19, wherein the solvent is an alcoholic solvent.
21. The method of claim 20, wherein the solvent is a monohydric alcohol solvent.
22. The method of claim 21, wherein the solvent is an ethanol solvent.
23. The method of claim 19, wherein the ultrasonic treatment is a treatment performed at a temperature of not higher than 15 ℃.
24. The production method according to claim 23, wherein the ultrasonic treatment is a treatment at a temperature of 0 to 15 ℃.
25. The production method according to claim 24, wherein the ultrasonic treatment is a treatment at a temperature of 0 to 5 ℃.
26. The method of claim 19, wherein the sonication time is 30 minutes or more.
27. The method of claim 19, wherein the cathode interface material is
Wherein R is 1 When the side chain containing nitrogen or oxygen and having a conjugated system is shown, the preparation step of the cathode interface material comprises the following steps: the synthesis was carried out according to the following formula:
28. the method of claim 27, wherein the preparing of the cathode interface material comprises: reacting 1,3,5, 7-tetrakis (4- (4, 5-tetramethyl-1, 3, 2-dioxaborane) phenyl) adamantane with a compound containing R 1 The halogenated compound of the group reacts to form the cathode interface material.
29. The method according to claim 28, wherein said 1,3,5, 7-tetrakis (4- (4, 5-tetramethyl-1, 3, 2-dioxaborane) phenyl) adamantane and said compound containing R 1 The molar ratio of halogenated compounds of groups is 5.8-6.2:1.
30. the method of claim 28, wherein the synthesis of 1,3,5, 7-tetrakis (4- (4, 5-tetramethyl-1, 3, 2-2-dioxaborane) phenyl) adamantane comprises reacting 1,3,5, 7-tetrakis (4-iodophenyl) adamantane, pinacol diborate, potassium acetate and PdCl 2 Mixing and reacting.
31. The method of claim 30, wherein the 1,3,5, 7-tetrakis (4-iodophenyl) adamantane, the pinacol ester diboron, the potassium acetate, and the PdCl are present 2 In a molar ratio of 1: (5.8-6.2): (14-16): (0.1-0.13).
32. A method of making an optoelectronic device comprising coating the three-dimensional composite of claim 16 on a cathode or active layer.
33. An opto-electrical device, characterized in that it is produced by a method of manufacturing an opto-electrical device according to claim 32.
34. The optoelectronic device according to claim 33, wherein the optoelectronic device comprises any one of a battery, a diode, a detector, a capacitor, and a photovoltaic device.
35. The optoelectronic device according to claim 34, wherein the cell comprises a solar cell and an electrochemical cell.
36. The optoelectronic device according to claim 35, wherein the solar cell comprises any one of a tandem organic solar cell and a perovskite solar cell.
37. The optoelectronic device according to claim 34, wherein the diode is an organic light emitting diode.
38. The optoelectronic device according to claim 34, wherein the detector is a photodetector.
39. The optoelectronic device according to claim 34, wherein the capacitor is a supercapacitor.
40. The optoelectronic device according to claim 34, wherein the optoelectronic device is a photovoltaic device.
41. The optoelectronic device according to claim 40, wherein the photovoltaic device has an energy conversion efficiency of 15.6-15.8%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911266582.7A CN111106252B (en) | 2019-12-11 | 2019-12-11 | Application of cathode interface material, three-dimensional composite material and preparation method thereof, and photoelectric device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911266582.7A CN111106252B (en) | 2019-12-11 | 2019-12-11 | Application of cathode interface material, three-dimensional composite material and preparation method thereof, and photoelectric device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111106252A CN111106252A (en) | 2020-05-05 |
| CN111106252B true CN111106252B (en) | 2022-11-11 |
Family
ID=70421603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911266582.7A Active CN111106252B (en) | 2019-12-11 | 2019-12-11 | Application of cathode interface material, three-dimensional composite material and preparation method thereof, and photoelectric device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111106252B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117156875B (en) * | 2023-10-31 | 2024-01-23 | 电子科技大学 | High-performance solar cell based on non-contact passivation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106518905A (en) * | 2016-09-12 | 2017-03-22 | 贵州理工学院 | Three-dimensional organic/inorganic hybrid cathode interface modification material, synthesis method and application thereof |
| CN107098919A (en) * | 2017-03-13 | 2017-08-29 | 华南理工大学 | The molten conjugation small molecule of A D A types water/alcohol and its application in organic electronic device |
| CN109912596A (en) * | 2019-03-19 | 2019-06-21 | 武汉大学 | A kind of embellishing cathode interface material, preparation method and its application |
| CN110429181A (en) * | 2019-08-02 | 2019-11-08 | 贵州理工学院 | A kind of embellishing cathode interface material compositions, preparation method and application |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7960037B2 (en) * | 2004-12-03 | 2011-06-14 | The Regents Of The University Of California | Carbon nanotube polymer composition and devices |
| US9685567B2 (en) * | 2012-07-20 | 2017-06-20 | Nutech Ventures | Nanocomposite photodetector |
-
2019
- 2019-12-11 CN CN201911266582.7A patent/CN111106252B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106518905A (en) * | 2016-09-12 | 2017-03-22 | 贵州理工学院 | Three-dimensional organic/inorganic hybrid cathode interface modification material, synthesis method and application thereof |
| CN107098919A (en) * | 2017-03-13 | 2017-08-29 | 华南理工大学 | The molten conjugation small molecule of A D A types water/alcohol and its application in organic electronic device |
| CN109912596A (en) * | 2019-03-19 | 2019-06-21 | 武汉大学 | A kind of embellishing cathode interface material, preparation method and its application |
| CN110429181A (en) * | 2019-08-02 | 2019-11-08 | 贵州理工学院 | A kind of embellishing cathode interface material compositions, preparation method and application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111106252A (en) | 2020-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| You et al. | Two-dimensional materials in perovskite solar cells | |
| Liu et al. | Organic photovoltaic devices based on a novel acceptor material: graphene | |
| JP6461599B2 (en) | Electronic equipment | |
| Iwan et al. | Perspectives of applied graphene: Polymer solar cells | |
| Tiwari et al. | Functionalised graphene as flexible electrodes for polymer photovoltaics | |
| Liu et al. | Solution-processable functionalized graphene in donor/acceptor-type organic photovoltaic cells | |
| Yang et al. | The modification of ZnO surface with natural antioxidants to fabricate highly efficient and stable inverted organic solar cells | |
| Wang et al. | Composition and annealing effects in solution-processable functionalized graphene oxide/P3HT based solar cells | |
| Ranganathan et al. | Enhanced photovoltaic performance of dye-sensitized solar cells based on nickel oxide supported on nitrogen-doped graphene nanocomposite as a photoanode | |
| Şenocak et al. | Synthesis and organic solar cell performance of BODIPY and coumarin functionalized SWCNTs or graphene oxide nanomaterials | |
| CN110429181B (en) | Organic photoelectric device and method for manufacturing same | |
| WO2011160021A2 (en) | Fullerene derivatives | |
| Wang et al. | Polymer bulk heterojunction photovoltaic devices based on complex donors and solution-processable functionalized graphene oxide | |
| Dang et al. | Solution processed hybrid Graphene-MoO3 hole transport layers for improved performance of organic solar cells | |
| Chen et al. | Methoxy groups on bifluorenylidene-based hole transporting materials result in highly efficient and stable dopant-free inverted perovskite solar cells | |
| Chang et al. | Pyrenebutyrate-functionalized graphene/poly (3-octyl-thiophene) nanocomposites based photoelectrochemical cell | |
| Li et al. | Methane-perylene diimide-based small molecule acceptors for high efficiency non-fullerene organic solar cells | |
| Fernández-Arteaga et al. | Solution processable graphene derivative used in a bilayer anode with conductive PEDOT: PSS on the non-fullerene PBDB-T: ITIC based organic solar cells | |
| Bhatia et al. | Soluble single-walled carbon nanotubes for photovoltaics | |
| CN111106252B (en) | Application of cathode interface material, three-dimensional composite material and preparation method thereof, and photoelectric device and preparation method thereof | |
| Zhu et al. | P-type tetrathiafulvalene derivative as the interface modification layer in non-fullerene organic solar cells with high performance | |
| Al-Gamal et al. | Promising nitrogen-doped graphene derivatives; a case study for preparations, fabrication mechanisms, and applications in perovskite solar cells | |
| Arfin et al. | Graphene for advanced organic photovoltaics | |
| Wang et al. | A new dibenzo [gp] chrysene derivative as an efficient anode buffer for inverted polymer solar cells | |
| Pandey et al. | Single Step Blending of PEDOT: PSS/SPGO Nanocomposite via low temperature solid phase addition of graphene oxide for effective hole transport layer in organic solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |