CN111048614B - Integrated photovoltaic thermoelectric coupling device and manufacturing method thereof - Google Patents
Integrated photovoltaic thermoelectric coupling device and manufacturing method thereof Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
- H01L31/0525—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention provides an integrated photovoltaic thermoelectric coupling device and a manufacturing method thereof, wherein the integrated photovoltaic thermoelectric coupling device comprises a photovoltaic cell, an insulating layer, a thermal interface material and a thermoelectric module, wherein the back of the photovoltaic cell is provided with the insulating layer; coating a thermal interface material below the insulating layer; a thermoelectric module is disposed beneath the thermal interface material. The invention simplifies the structure of the photovoltaic thermoelectric coupling device, leads the photovoltaic cell to be directly contacted with the copper electrode of the thermoelectric module, and carries out film coating treatment on the back surface of the photovoltaic cell to realize the electric insulation contact of the photovoltaic cell and the thermoelectric module. The invention realizes the integrated coupling design, greatly reduces the thermal contact resistance by simplifying the internal structure, strengthens the heat transfer and obviously improves the performances of the photovoltaic cell and the thermoelectric module.
Description
Technical Field
The invention relates to an integrated photovoltaic thermoelectric coupling device and a manufacturing method thereof, belonging to the field of semiconductor device energy management.
Background
With the gradual and severe environmental pollution and energy shortage, the search for new clean and environmentally friendly energy and new energy conversion mode has become the focus of attention of various research institutions and energy enterprises at present. Among a plurality of new energy conversion technologies, the photovoltaic power generation system attracts the interests of a plurality of researchers by virtue of static operation, environmental friendliness, high reliability and the like. Photovoltaic power generation is a technology for converting light energy into electric energy by using the photoelectric effect of a solar cell, and when the solar cell is irradiated by sunlight, a potential difference is generated and current is generated under the condition of passage. The photovoltaic power generation system can reasonably utilize solar energy to the maximum extent, and is a new technology for generating power by utilizing solar energy. However, the photovoltaic cell has limitations in utilizing sunlight, and since it mainly utilizes partial spectra of ultraviolet light, visible light, and the like, and most of the spectra of near infrared light and other regions are stored in the cell sheet in the form of heat energy, the temperature of the photovoltaic cell rises, thereby restricting the performance of the photovoltaic cell. Thermoelectric power generation is a technology that can directly convert thermal energy into electric energy, and has the advantages of static operation, environmental friendliness, high reliability and the like. When a temperature difference exists across the thermoelectric device, a potential difference is generated and accompanies current generation in the case of a path. The photovoltaic cell is coupled with the thermoelectric module, so that the waste heat generated by the photovoltaic cell can be utilized, and the secondary utilization of energy is realized. For coupled systems, heat transfer from the photovoltaic cell to the thermoelectric module is an important factor affecting system performance. How to enhance the heat transfer of the photovoltaic cell to the thermoelectric module is a key issue to improve the overall performance of the coupled system.
Therefore, there is a need for an integrated photovoltaic thermoelectric device and method of making the same.
Disclosure of Invention
In order to improve heat loss caused by overhigh contact thermal resistance in a photovoltaic thermoelectric coupling device, enhance heat transfer and improve the overall performance of the photovoltaic thermoelectric coupling device, the invention provides an integrated photovoltaic thermoelectric coupling device and a manufacturing method thereof. The invention relates to a management method for reducing contact thermal resistance and strengthening heat transfer in a photovoltaic thermoelectric coupling system.
In order to realize the purpose of the invention, the technical scheme of the invention is as follows:
the invention provides an integrated photovoltaic-thermoelectric coupling device, wherein the integrated photovoltaic-thermoelectric coupling device comprises a photovoltaic cell, an insulating layer, a thermal interface material and a thermoelectric module, wherein,
an insulating layer is arranged on the back surface of the photovoltaic cell;
a thermal interface material is coated under the insulating layer;
a thermoelectric module is arranged below the thermal interface material;
wherein the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed.
In a preferred embodiment of the present invention, wherein the coupling device further comprises an EVA encapsulant for encapsulating the photovoltaic cell and the thermoelectric module as a single body.
In a preferred embodiment of the present invention, wherein the photovoltaic cell comprises a single crystal silicon cell, a polycrystalline silicon cell, an amorphous silicon cell, a gallium arsenide cell, a perovskite cell, a copper indium gallium selenide cell, a dye sensitized cell, an organic cell or a HIT cell.
In a preferred embodiment of the present invention, wherein the insulating layer film material includes a superhard film material such as an aluminum oxide film, an aluminum nitride film, a titanium nitride film, a chromium nitride film, a nitride-doped aluminum film, etc., a diamond film, a diamond-like carbon film, a CN film material, etc.; smart film materials such as shape memory alloy film materials and the like; nano-thin film materials such as nano-multilayer film coatings, nano-composite hard coatings, and the like; a graphite flake two-dimensional film material; magnetic iron nitride film material.
In a preferred embodiment of the present invention, the thermal interface material includes silicone grease, silicone gel, phase-change material, phase-change metal gel, heat dissipation pad, or heat conduction gel.
In a more preferred embodiment of the present invention, wherein the thermal interface material has a thermal conductivity of 0.1 to 50 W.m-1·K-1。
In a preferred embodiment of the present invention, the thermoelectric module material includes bismuth telluride and its alloy, lead sulfide and its alloy, silicon germanium alloy, such as bismuth telluride material, lead sulfide material, zinc antimonide material, silicon germanium material, germanium telluride material, cerium sulfide material, etc.
The invention also provides a manufacturing method of the integrated photovoltaic thermoelectric coupling device, wherein the method comprises the following steps:
(1) coating the back of the photovoltaic cell to form an insulating layer;
(2) coating a thermal interface material below the insulating layer;
(3) disposing a thermoelectric module beneath the thermal interface material, wherein the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed;
(4) encapsulating the photovoltaic cell and the thermoelectric module into a whole through EVA (ethylene vinyl acetate) encapsulation;
wherein the photovoltaic cell with the back surface attached with the insulating layer is in direct contact with the thermoelectric module with the upper ceramic cover plate removed.
In a preferred embodiment of the present invention, the method for performing a coating process on the back surface of the photovoltaic cell in step (1) includes vacuum evaporation coating, vacuum sputter coating, ion coating, molecular beam epitaxy, ion beam enhanced deposition, electric spark deposition, electron beam physical vapor deposition or multilayer spray deposition, and chemical vapor deposition.
Compared with the prior art, the invention has the beneficial effects that:
1. the structure of the photovoltaic thermoelectric coupling device is simplified, redundant parts are removed, an upper ceramic cover plate of a traditional thermoelectric module is removed, so that a photovoltaic cell is directly contacted with a copper electrode of the thermoelectric module to reduce contact thermal resistance, the heat transfer of the coupling device is enhanced, the integral output of the coupling device is obviously enhanced, and the performance of the photovoltaic thermoelectric coupling device is greatly optimized;
2. aiming at the difficulty that the direct contact between the photovoltaic cell and the copper electrode of the thermoelectric module influences the electrical output, the back of the photovoltaic cell is subjected to film coating treatment, so that a compact thin film coating is formed on the back of the photovoltaic cell in a deposition manner to realize the electrically insulated contact between the photovoltaic cell and the thermoelectric module;
3. in order to further enhance the heat transfer of the coupling device, a thermal interface material is coated on the back surface of the photovoltaic cell, and the photovoltaic cell and the thermoelectric module are packaged into a whole to prepare the integrated photovoltaic thermoelectric coupling device;
4. the manufacturing method of the integrated photovoltaic thermoelectric coupling device is simple and feasible, and provides a novel idea for optimizing the performance of the photovoltaic thermoelectric coupling device.
Drawings
Fig. 1 is a schematic structural diagram of an integrated photovoltaic thermoelectric coupling device of the present invention.
Detailed Description
The following provides a preferred embodiment of the present invention with reference to the accompanying drawings to explain the technical solutions of the present invention in detail. The solar cell comprises an EVA package 1, a photovoltaic cell 2, an insulating layer 3, a thermal interface material 4 and a thermoelectric module 5.
In the following examples, a photovoltaic thermocouple device without removal of a ceramic cover sheet was composed of a photovoltaic cell with no insulating layer attached to the back side and a conventional commercial thermoelectric module without removal of an upper ceramic cover sheet. Wherein the photovoltaic cell is arranged above the thermoelectric module and is packaged by EVA material to obtain the photovoltaic thermoelectric coupling device without removing the ceramic cover plate.
Example 1
A monocrystalline silicon photovoltaic cell and a bismuth telluride thermoelectric module (the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed) are selected. And performing film coating treatment on the back surface of the photovoltaic cell by using an electron beam physical vapor deposition technology to form an insulating layer, wherein the film coating target material is aluminum oxide with the purity of 99%. Coating thermal interface material with thermal conductivity of 2.5 W.m on the lower surface of the insulating layer-1·K-1The silicone grease of (1). And finally, packaging the monocrystalline silicon photovoltaic cell and the bismuth telluride thermoelectric module into a whole through EVA packaging to obtain the integrated photovoltaic thermoelectric coupling device. The result shows that the output power of the monocrystalline silicon photovoltaic cell is obviously improved by the integrated photovoltaic thermoelectric coupling device, and compared with the photovoltaic thermoelectric coupling device without the ceramic cover plate, the performance of the photovoltaic cell in the integrated coupling device can be improved by 15.1%. Therefore, the integrated coupling device strengthens the heat transfer of the coupling device, improves the heat absorption capacity of the hot end of the thermoelectric module, and obviously improves the performance of the thermoelectric module. Compared with a photovoltaic thermoelectric coupling device without a ceramic cover plate, the performance of the thermoelectric module in the integrated coupling device is improved by 95%.
Example 2
A gallium arsenide photovoltaic cell and a bismuth telluride thermoelectric module (the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed) are selected. The back of the photovoltaic cell is coated by a vacuum evaporation coating technology to form an insulating layer,the coating target material is aluminum nitride with the purity of 99 percent. A thermal interface material is applied under the insulating layer. The thermal interface material has a thermal conductivity of 1.0 W.m-1·K-1The silicone grease of (1). And arranging a thermoelectric module below the thermal interface material, and finally packaging the gallium arsenide photovoltaic cell and the thermoelectric module into a whole through EVA (ethylene vinyl acetate) packaging to obtain the integrated photovoltaic thermoelectric coupling device. The result shows that the output power of the gallium arsenide photovoltaic cell is obviously improved by the integrated photovoltaic thermoelectric coupling device, and compared with the photovoltaic thermoelectric coupling device without the ceramic cover plate, the performance of the gallium arsenide photovoltaic cell in the integrated coupling device can be improved by 12.5%. Therefore, the integrated coupling device strengthens the heat transfer of the coupling device, improves the heat absorption capacity of the hot end of the thermoelectric module, and obviously improves the performance of the thermoelectric module. Compared with a photovoltaic thermoelectric coupling device without a ceramic cover plate, the performance of the thermoelectric module in the integrated coupling device is improved by 85%.
Example 3
The method comprises the steps of selecting a polycrystalline silicon photovoltaic cell and a lead sulfide thermoelectric module (the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed). And performing film coating treatment on the back surface of the photovoltaic cell by using an electron beam physical vapor deposition technology to form an insulating layer, wherein the film coating target material is aluminum nitride with the purity of 99%. Coating a thermal interface material under the insulating layer, wherein the thermal interface material has a thermal conductivity of 4.2 W.m-1·K-1. And arranging a thermoelectric module below the thermal interface material, and finally packaging the photovoltaic cell and the thermoelectric module into a whole through EVA (ethylene vinyl acetate) packaging to obtain the integrated photovoltaic thermoelectric coupling device. The result shows that the output power of the polycrystalline silicon photovoltaic cell is obviously improved by the integrated photovoltaic thermoelectric coupling device, and compared with the photovoltaic thermoelectric coupling device without the ceramic cover plate, the performance of the photovoltaic cell in the integrated coupling device can be improved by 13.2%. Therefore, the integrated coupling device strengthens the heat transfer of the coupling device, improves the heat absorption capacity of the hot end of the thermoelectric module, and obviously improves the performance of the thermoelectric module. Compared with a photovoltaic thermoelectric coupling device without a ceramic cover plate, the performance of the thermoelectric module in the integrated coupling device is improved112％。
Example 4
The copper indium gallium selenide photovoltaic cell and the lead sulfide thermoelectric module (the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed) are selected. And carrying out film coating treatment on the back of the photovoltaic cell by an electron beam physical vapor deposition technology to form an insulating layer, wherein the film coating target material is chromium nitride. Coating thermal interface material with thermal conductivity of 1.1 W.m on the lower surface of the insulating layer-1·K-1. And arranging a thermoelectric module below the thermal interface material, and finally packaging the photovoltaic cell and the thermoelectric module into a whole through EVA (ethylene vinyl acetate) packaging to obtain the integrated photovoltaic thermoelectric coupling device. The result shows that the output power of the CIGS photovoltaic cell is remarkably improved by the integrated photovoltaic thermoelectric coupling device, and compared with the photovoltaic thermoelectric coupling device without the ceramic cover plate, the performance of the photovoltaic cell in the integrated coupling device can be improved by 13.0%. Therefore, the integrated coupling device strengthens the heat transfer of the coupling device, improves the heat absorption capacity of the hot end of the thermoelectric module, and obviously improves the performance of the thermoelectric module. Compared with a photovoltaic thermoelectric coupling device without a ceramic cover plate, the performance of the thermoelectric module in the integrated coupling device is improved by 92%.
Example 5
An amorphous silicon photovoltaic cell and a germanium telluride thermoelectric module (the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed) are selected. The back of the photovoltaic cell is subjected to film coating treatment by a vacuum evaporation coating technology to form an insulating layer, and the film coating target material is titanium nitride. Coating thermal interface material with thermal conductivity of 3.0 W.m on the lower surface of the insulating layer-1·K-1. And arranging a thermoelectric module below the thermal interface material, and finally packaging the photovoltaic cell and the thermoelectric module into a whole through EVA (ethylene vinyl acetate) packaging to obtain the integrated photovoltaic thermoelectric coupling device. The result shows that the output power of the amorphous silicon photovoltaic cell is obviously improved by the integrated photovoltaic thermoelectric coupling device, and compared with the photovoltaic thermoelectric coupling device without the ceramic cover plate, the performance of the photovoltaic cell in the integrated coupling device can be improved by 13.6%. Thus, the integral coupling of the present inventionThe device strengthens the heat transfer of the coupling device, improves the heat absorption capacity of the hot end of the thermoelectric module and obviously improves the performance of the thermoelectric module. Compared with a photovoltaic thermoelectric coupling device without a ceramic cover plate, the performance of a thermoelectric module in the integrated coupling device is improved by 104%.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and are intended to be included within the scope of the invention.
Claims (6)
1. A method for manufacturing an integrated photovoltaic thermoelectric coupling device, the photovoltaic thermoelectric coupling device comprises a photovoltaic cell, an insulating layer, a thermal interface material and a thermoelectric module, wherein,
an insulating layer is arranged on the back surface of the photovoltaic cell;
a thermal interface material is coated under the insulating layer;
a thermoelectric module is arranged below the thermal interface material;
wherein the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed;
the coupling device further comprises an EVA package for integrally packaging the photovoltaic cell and the thermoelectric module;
the thermal interface material has a thermal conductivity of 0.1-50 W.m-1·K-1Characterized in that it comprises the following steps:
(1) coating the back of the photovoltaic cell to form an insulating layer;
(2) coating a thermal interface material below the insulating layer;
(3) disposing a thermoelectric module beneath the thermal interface material, wherein the thermoelectric module is a thermoelectric module with an upper ceramic cover plate removed;
(4) encapsulating the photovoltaic cell and the thermoelectric module into a whole through EVA (ethylene vinyl acetate) encapsulation;
wherein the photovoltaic cell with the back surface attached with the insulating layer is in direct contact with the thermoelectric module with the upper ceramic cover plate removed.
2. The method of claim 1, wherein the step (1) of coating the back surface of the photovoltaic cell comprises vacuum evaporation coating, vacuum sputter coating, ion coating, molecular beam epitaxy, ion beam enhanced deposition, spark deposition, electron beam physical vapor deposition or multilayer spray deposition, or chemical vapor deposition.
3. The method of claim 1, wherein the photovoltaic cell comprises a monocrystalline silicon cell, a polycrystalline silicon cell, an amorphous silicon cell, a gallium arsenide cell, a perovskite cell, a copper indium gallium selenide cell, a dye sensitized cell, an organic cell, or a HIT cell.
4. The method of fabricating an integrated photovoltaic thermoelectric coupling device according to claim 1, wherein the insulating layer film material comprises a superhard film material: aluminum oxide film, aluminum nitride film, titanium nitride film, chromium nitride film, nitride-doped aluminum film, diamond-like carbon film, CN film material; intelligent thin film material: a shape memory alloy thin film material; nano-film material: nano multilayer film coatings, nano composite hard coatings; a graphite flake two-dimensional film material; magnetic iron nitride film material.
5. The method of claim 1, wherein the thermal interface material comprises silicone grease, silicone gel, phase change material, phase change metal gel, heat sink, or thermal conductive gel.
6. The method of claim 1, wherein the thermoelectric module material comprises bismuth telluride and alloys thereof, lead sulfide and alloys thereof, silicon germanium alloys: bismuth telluride material, lead sulfide material, zinc antimonide material, silicon germanium material, germanium telluride material and cerium sulfide material.
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