CN110868074A - Fixed-frequency synchronous rectification bidirectional DC/DC converter and power electronic equipment applying same - Google Patents
Fixed-frequency synchronous rectification bidirectional DC/DC converter and power electronic equipment applying same Download PDFInfo
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- CN110868074A CN110868074A CN201910992600.3A CN201910992600A CN110868074A CN 110868074 A CN110868074 A CN 110868074A CN 201910992600 A CN201910992600 A CN 201910992600A CN 110868074 A CN110868074 A CN 110868074A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33584—Bidirectional converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention relates to a fixed-frequency synchronous rectification bidirectional DC/DC converter, which comprises a transformer, a first power framework arranged on one side of the transformer, a second power framework arranged on the other side of the transformer, a first resonant capacitor arranged between the first power framework and the transformer, and a second resonant capacitor arranged between the transformer and the second power framework, wherein the first resonant capacitor is connected with the transformer through a first capacitor; the first/second power architectures are each a bridge structure comprising a plurality of controllable semiconductor switching devices; the working frequency of the first/second framework used as the modulation circuit is the same and fixed, and is greater than or equal to the maximum value of the resonant frequency of the leakage inductance resonance of the first/second resonant capacitor and the transformer. The invention also provides power electronic equipment requiring energy to flow bidirectionally, which comprises the fixed-frequency synchronous rectification bidirectional DC/DC converter. The invention can improve the energy conversion efficiency by controlling the controllable semiconductor switch devices on the two sides of the transformer; the energy back-flow can be avoided through the setting of the working frequency, and the method is simple, reliable and high in efficiency.
Description
Technical Field
The invention belongs to the technical field of power electronic converters, and particularly relates to a fixed-frequency synchronous rectification bidirectional DC/DC converter and power electronic equipment using the same.
Background
At present, most direct current converters only need to realize unidirectional conversion of energy, namely conversion of energy from high voltage to low voltage for reducing voltage, or conversion of energy from low voltage to high voltage for increasing voltage. The energy storage medium can store or release energy at any time, and along with the rapid development of the energy storage medium, the power electronic equipment is urgently needed to charge and discharge the energy storage medium, namely, the energy bidirectional flow is realized by one equipment.
Therefore, the power electronic equipment applied to the energy storage system can realize the bidirectional flow of energy only by integrating two unidirectional direct current converters, and thus the power electronic equipment needs to use more components. When energy flows in one direction, only the semiconductor device on one direction is controlled to be switched on and off, and the switching device on the other side of the transformer only performs a passive rectification function. Although the mode of only controlling the single-side switching device to modulate is simple, the characteristics and advantages of energy bidirectional flow are not really exerted, and the energy conversion efficiency is low.
The LLC resonant converter is used as a more advantageous bidirectional converter, and the leakage inductance Lk of the transformer is used as the resonant inductance Lr, so that components can be saved. However, the leakage inductance of the transformer exists on the primary side and the secondary side of the transformer at the same time, and the leakage inductance of the primary side and the secondary side is reflected by the transformer. The resonant frequency of the converter is therefore not the same when energy flows in the forward and reverse directions. For the LLC resonant converter, the operating frequency fs may be equal to or higher than the resonant frequency fr, or may be lower than the resonant frequency fr. And when fs is less than fr, the synchronous rectification device is driven to be closed before LLC resonance is finished, otherwise, energy backflow is caused, and even the resonance is wrong and the machine explodes.
Disclosure of Invention
The invention aims to provide a fixed-frequency synchronous rectification bidirectional DC/DC converter which can improve conversion efficiency and avoid energy back-flow.
In order to achieve the purpose, the invention adopts the technical scheme that:
a fixed frequency synchronous rectified bidirectional DC/DC converter comprising: a transformer, a first power structure provided at one side of the transformer to serve as a modulation circuit or a synchronous rectification circuit, a second power structure provided at the other side of the transformer to serve as a synchronous rectification circuit or a modulation circuit, a first resonance capacitor provided between the first power structure and the transformer to resonate with leakage inductance of the transformer, and a second resonance capacitor provided between the transformer and the second power structure to resonate with leakage inductance of the transformer; the first power architecture and the second power architecture are both bridge structures comprising a plurality of controllable semiconductor switching devices;
the resonant frequency of the leakage inductance resonance of the transformer and the resonant frequency of the leakage inductance resonance of the first resonant capacitor are the same as the resonant frequency of the leakage inductance resonance of the transformer and the resonant frequency of the second resonant capacitor is the same as the resonant frequency of the leakage inductance resonance of the transformer and the operating frequency of the first power architecture used as the modulation circuit and the operating frequency of the second power architecture used as the modulation circuit are fixed and are greater than or equal to the maximum value of the resonant frequency of the leakage inductance resonance of the transformer and the resonant frequency of the first resonant capacitor or the maximum value of the resonant frequency of the leakage inductance resonance of the transformer and the resonant frequency of the second resonant capacitor.
Preferably, the first power architecture comprises a first set of the controllable semiconductor switching devices controlled with a first drive signal, a second set of the controllable semiconductor switching devices controlled with a second drive signal; the second power architecture includes a third set of the controllable semiconductor switching devices controlled with a third drive signal, a fourth set of the controllable semiconductor switching devices controlled with a fourth drive signal;
when the first power architecture is used as a modulation circuit and the second power architecture is used as a synchronous rectification circuit, the first driving signal is complementary to the second driving signal, and the third driving signal is switched on after the first driving signal is switched on and passes through a preset auxiliary delay time; after the third driving signal is turned off and the preset auxiliary delay time passes, the first driving signal is turned off; the fourth driving signal is switched on after the second driving signal is switched on and passes through preset auxiliary delay time; after the fourth driving signal is turned off and the preset auxiliary delay time passes, the second driving signal is turned off;
when the second power architecture is used as a modulation circuit and the first power architecture is used as a synchronous rectification circuit, the third driving signal is complementary to the fourth driving signal; the third driving signal is switched on and after a preset auxiliary delay time, the first driving signal is switched on; after the first driving signal is turned off and the preset auxiliary delay time passes, the third driving signal is turned off; the fourth driving signal is switched on, and after a preset auxiliary delay time, the second driving signal is switched on; and after the second driving signal is turned off and the preset auxiliary delay time passes, the fourth driving signal is turned off.
Preferably, the first drive signal and the second drive signal are complementary based on a preset dead time, and the third drive signal and the fourth drive signal are complementary based on a preset dead time.
Preferably, the first power architecture and the second power architecture both adopt a full-bridge architecture or a half-bridge architecture.
Preferably, when the first power architecture adopts a full-bridge architecture, the first power architecture includes a first controllable semiconductor switch device, a second controllable semiconductor switch device, a third controllable semiconductor switch device, and a fourth controllable semiconductor switch device, the first controllable semiconductor switch device and the third controllable semiconductor switch device are connected in series to form a first bridge arm of the first power architecture, the second controllable semiconductor switch device and the fourth controllable semiconductor switch device are connected in series to form a second bridge arm of the first power architecture, the first controllable semiconductor switch device and the fourth controllable semiconductor switch device are controlled by the first driving signal, and the third controllable semiconductor switch device and the second controllable semiconductor switch device are controlled by the second driving signal;
when the second power architecture adopts a full-bridge architecture, the second power architecture comprises a fifth controllable semiconductor switch device, a sixth controllable semiconductor switch device, a seventh controllable semiconductor switch device and an eighth controllable semiconductor switch device, the fifth controllable semiconductor switch device and the seventh controllable semiconductor switch device are connected in series to form a first bridge arm of the second power architecture, the sixth controllable semiconductor switch device and the eighth controllable semiconductor switch device are connected in series to form a second bridge arm of the second power architecture, the fifth controllable semiconductor switch device and the eighth controllable semiconductor switch device are controlled by the third driving signal, and the seventh controllable semiconductor switch device and the sixth controllable semiconductor switch device are controlled by the fourth driving signal.
Preferably, the controllable semiconductor switching device employs a MOSFET.
The invention also provides power electronic equipment requiring bidirectional energy flow, which comprises the fixed-frequency synchronous rectification bidirectional DC/DC converter.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages: the invention can improve the energy conversion efficiency by controlling the controllable semiconductor switch devices on the two sides of the transformer; energy backward irrigation can be avoided through the setting of working frequency, and therefore the device has the advantages of simplicity, reliability and high efficiency.
Drawings
Fig. 1 is a circuit architecture diagram of the constant frequency synchronous rectification bidirectional DC/DC converter of the present invention.
FIG. 2 is a circuit diagram of the constant frequency synchronous rectification bidirectional DC/DC converter of the present invention during forward energy transfer.
Fig. 3 is a waveform diagram of the constant frequency synchronous rectification bidirectional DC/DC converter of the invention when energy is transferred in the forward direction and fs is fr.
FIG. 4 is a waveform diagram of the constant frequency synchronous rectification bidirectional DC/DC converter of the present invention when the energy is transferred in the forward direction and fs is greater than fr.
FIG. 5 is a circuit diagram of the constant frequency synchronous rectification bidirectional DC/DC converter of the present invention during energy reverse transfer.
Fig. 6 is a waveform diagram of the constant frequency synchronous rectification bidirectional DC/DC converter of the present invention when energy is transmitted in reverse direction and fs is fr.
FIG. 7 is a waveform diagram of the constant frequency synchronous rectification bidirectional DC/DC converter of the present invention when the energy is transferred reversely and fs > fr.
Detailed Description
The invention will be further described with reference to examples of embodiments shown in the drawings to which the invention is attached.
The first embodiment is as follows: as shown in fig. 1, a constant frequency synchronous rectification bidirectional DC/DC converter includes a Transformer, a first power structure, a second power structure, a first resonant capacitor Cr and a second resonant capacitor Crs. The first power framework is arranged on one side of the Transformer, and the second power framework is arranged on the other side of the Transformer. The first power architecture can be used as a modulation circuit or a synchronous rectification circuit and the second power architecture can be used as a synchronous rectification circuit or a modulation circuit. The first resonant capacitor Cr is disposed between the first power structure and the Transformer, and is capable of resonating with a leakage inductance Lr of the Transformer. The second resonant capacitor Crs is disposed between the Transformer and the second power structure, and is also capable of resonating with the leakage inductance Lrs of the Transformer.
The first power architecture and the second power architecture are both bridge structures comprising a plurality of controllable semiconductor switching devices. The first power architecture comprises a first set of controllable semiconductor switching devices controlled with a first drive signal PWM1, a second set of controllable semiconductor switching devices controlled with a second drive signal PWM 2. The second power architecture comprises a third set of controllable semiconductor switching devices controlled with a third drive signal PWM3, a fourth set of controllable semiconductor switching devices controlled with a fourth drive signal PWM 4. The first power architecture and the second power architecture both adopt a full-bridge architecture or a half-bridge architecture. In this embodiment, the first power architecture and the second power architecture both adopt a full-bridge architecture, and the first power architecture includes a first controllable semiconductor switching device M1, a second controllable semiconductor switching device M2, a third controllable semiconductor switching device M3 and a fourth controllable semiconductor switching device M4, the first controllable semiconductor switching device M1 and the third controllable semiconductor switching device M3 are connected in series to form a first bridge arm of the first power architecture, the second controllable semiconductor switching device M2 and the fourth controllable semiconductor switching device M4 are connected in series to form a second bridge arm of the first power architecture, the first controllable semiconductor switching device M1 and the fourth controllable semiconductor switching device M4 are controlled by a first driving signal PWM1 to form a first group of controllable semiconductor switching devices, the third controllable semiconductor switching device M3 and the second controllable semiconductor switching device M2 are controlled by a second driving signal PWM2, forming a second group of semiconductor controllable switching devices. The second power architecture comprises a fifth controllable semiconductor switching device M5, a sixth controllable semiconductor switching device M6, a seventh controllable semiconductor switching device M7 and an eighth controllable semiconductor switching device M8, the fifth controllable semiconductor switching device M5 and the seventh controllable semiconductor switching device M7 are connected in series to form a first bridge arm of the second power architecture, the sixth controllable semiconductor switching device M6 and the eighth controllable semiconductor switching device M8 are connected in series to form a second bridge arm of the second power architecture, the fifth controllable semiconductor switching device M5 and the eighth controllable semiconductor switching device M8 are controlled by a third driving signal PWM3 to form a third group of controllable semiconductor switching devices, and the seventh controllable semiconductor switching device M7 and the sixth controllable semiconductor switching device M6 are controlled by a fourth driving signal PWM4 to form a fourth group of controllable semiconductor switching devices. Two ends of a first bridge arm and a second bridge arm of the first power framework are connected to two ends of a first power supply V1, a middle point of the first bridge arm of the first power framework is connected to one end of a primary side of a Transformer through a first resonant capacitor Cr, and a middle point of the second bridge arm of the first power framework is connected to the other end of the primary side of the Transformer. Two ends of a first bridge arm and a second bridge arm of the second power framework are connected to two ends of a second power supply V2, one end of a Transformer secondary side is connected to the middle point of the first bridge arm of the second power framework through a second resonant capacitor Crs, and the other end of the Transformer secondary side is connected to the middle point of the second bridge arm of the second power framework.
In the above solution, each of the controllable semiconductor switching devices, including the first controllable semiconductor switching device M1 to the eighth controllable semiconductor switching device M8, employs a MOSFET.
In the above scheme, the controllable semiconductor switching devices are adopted in both the first power architecture and the second power architecture, and all the controllable semiconductor switching devices are controlled in the whole energy conversion process, specifically as follows:
when the circuit of the constant-frequency synchronous rectification bidirectional DC/DC converter works in a forward energy transfer mode, namely the first power architecture is used as a modulation circuit, the second power architecture is used as a synchronous rectification circuit, the first controllable semiconductor switching device M1 to the fourth controllable semiconductor switching device M4 are used as modulation tubes, the fifth controllable semiconductor switching device M5 to the eighth controllable semiconductor switching device M8 are used as synchronous rectification tubes, and the working state of the circuit is shown in figure 2. The first driving signal PWM1 and the second driving signal PWM2 are complementary based on the preset dead time Td, and the switching frequency is the operating frequency fs of the first power architecture. Setting an auxiliary delay time Ta, and after the first driving signal PWM1 is switched on and the preset auxiliary delay time Ta is passed, switching on the third driving signal PWM 3; after the third driving signal PWM3 is turned off and a preset auxiliary delay time Ta elapses, the first driving signal PWM1 is turned off; after the second driving signal PWM2 is turned on and a preset auxiliary delay time Ta elapses, the fourth driving signal PWM4 is turned on; after the fourth driving signal PWM4 is turned off and a preset auxiliary delay time Ta elapses, the second driving signal PWM2 is turned off.
When the circuit works in a forward energy transfer mode, the resonant frequency of the first resonant capacitor Cr and the leakage inductance Lr of the transformer
In practical application, a certain deviation exists between Lr and Cr non-ideal devices, so that the condition that the resonant frequency is maximum when Lr and Cr are both minimum values needs to be considered when fs is selected, and it is ensured that fs is greater than the maximum resonant frequency, that is, the working frequency fs of the first framework used as the modulation circuit is greater than or equal to the maximum value of the resonant frequency of the first resonant capacitor Cr and the leakage inductance Lr resonance of the Transformer. Thus in the actual working processIn the formula, fs is not less than fr. When fs is fr, the circuit operation waveform is as shown in fig. 3. When fs > fr, the circuit operation waveform is as shown in FIG. 4. Dead time Td (t5-t4) or Td (t9-t8) of the modulation tube driving PWM1 and PWM 2; the auxiliary delay time Ta between the synchronous rectifier driving PWM3 and the modulation transistor driving PWM1 is (t2-t1) or (t4-t 3); the auxiliary delay time Ta between the synchronous rectifier drive PWM4 and the modulator drive PWM2 is (t6-t5) or (t8-t 7). As can be seen from fig. 3 and 4, when the synchronous rectifier is turned off, Ir is greater than Im in both the cases of fs ═ fr and fs > fr, that is, the synchronous rectifier does not generate energy back-flow.
When the circuit of the constant-frequency synchronous rectification bidirectional DC/DC converter works in a reverse energy transfer mode, namely the second power architecture is used as a modulation circuit, and the first power architecture is used as a synchronous rectification circuit, the fifth controllable semiconductor switching device M5 to the eighth controllable semiconductor switching device M8 are used as modulation tubes, the first controllable semiconductor switching device M1 to the fourth controllable semiconductor switching device M4 are used as synchronous rectification tubes, and the working state of the circuit is shown in figure 5. The third driving signal PWM3 and the fourth driving signal PWM4 are complementary based on the preset dead time Td, and the switching frequency is the operating frequency fs of the second power architecture. After the third driving signal PWM3 is turned on and a preset auxiliary delay time Ta elapses, the first driving signal PWM1 is turned on; after the first driving signal PWM1 is turned off and a preset auxiliary delay time Ta elapses, the third driving signal PWM3 is turned off; after the fourth driving signal PWM4 is turned on and a preset auxiliary delay time Ta elapses, the second driving signal PWM2 is turned on; after the second driving signal PWM2 is turned off and the preset auxiliary delay time Ta elapses, the fourth driving signal PWM4 is turned off.
Resonant frequency of the circuit operating in reverse energy transfer mode
According to the calculation formula of the resonant frequency in forward working
And Lr and Lrs are both the leakage of Transformer itselfThe feeling of the human body is that,
the turn ratio of the primary side and the secondary side of the Transformer is obtained. Therefore, the value of the Crs can be designed, and the consistent resonance frequency fr during the bidirectional energy transfer is ensured, namely the resonance frequency of the first resonance capacitor Cr and the leakage inductance Lr of the Transformer is the same as the resonance frequency of the second resonance capacitor Crs and the leakage inductance Lrs of the Transformer. Therefore, when the circuit works in the reverse energy transfer mode, fs is larger than or equal to fr, namely the working frequency of the second framework used as the modulation circuit is larger than or equal to the maximum value of the resonant frequency of the resonance of the second resonant capacitor Crs and the leakage inductance Lrs of the Transformer. When fs is fr, the circuit operation waveform is as shown in fig. 6. When fs > fr, the circuit operation waveform is as shown in FIG. 7. Dead time Td (t5-t4) or Td (t9-t8) of the modulation tube driving PWM3 and PWM 4; the auxiliary delay time Ta between the synchronous rectifier driving PWM1 and the modulation transistor driving PWM3 is (t2-t1) or (t4-t 3); the auxiliary delay time Ta between the synchronous rectifier drive PWM2 and the modulator drive PWM4 is (t6-t5) or (t8-t 7). As can be seen from fig. 6 and fig. 7, when the synchronous rectifier is turned off, Ir is greater than Im, i.e. the synchronous rectifier does not generate energy back-flow.
In the above scheme, since the resonant frequency of the first resonant capacitor Cr resonating with the leakage inductance Lr of the Transformer and the resonant frequency fr of the second resonant capacitor Crs resonating with the leakage inductance Lrs of the Transformer are the same, the working frequency of the first framework used as the modulation circuit or the working frequency of the second framework used as the modulation circuit may be fixed to a fixed value fs, and it is sufficient to ensure that the working frequency fs is greater than or equal to the resonant frequency fr.
The fixed-frequency synchronous rectification bidirectional DC/DC converter is suitable for power electronic equipment requiring bidirectional energy flow, such as an energy storage converter, an electric automobile charging pile and the like.
By adopting the scheme of the invention, the same converter can be used for realizing the bidirectional energy flow, and the utilization rate of components is improved. The scheme of the invention provides a scheme of how to calculate and design the value of the Crs, so that the leakage inductance of the transformer is used as the resonant inductance, the resonant frequency can be ensured to be consistent when the energy is transmitted in the forward direction or the reverse direction, and further, the optimal soft switching effect can be achieved by using the same fixed switching frequency fs under the working mode of the forward and reverse energy transmission, the design of a system is greatly simplified, and the efficiency of the converter is improved. By adopting the scheme of the invention, the risks of energy back-filling caused by too late synchronous rectification turn-off and even machine explosion caused by resonance error can be avoided. The synchronous rectification during bidirectional energy flow is simply and reliably realized, and the reliability and the conversion efficiency of the converter are improved.
In the scheme, when the converter performs energy conversion in any direction, the power devices on the primary side and the secondary side of the transformer are controlled to perform corresponding on-off, the advantage of small bidirectional on Rdson of the semiconductor field effect transistor is fully utilized, the purpose of reducing the loss of the rectifier tube is achieved, and the converter can work in any direction to achieve high efficiency.
For a fixed frequency LLC resonant converter, it is inevitable that an optimal operating condition cannot be achieved when the converter is converting energy in a certain direction. In order to save elements and space as much as possible, the leakage inductance Lk of the transformer is used as the resonant inductance Lr, and the leakage inductance Lk of the secondary side is also used as the resonant inductance Lrs in consideration of the fact that the leakage inductance of the transformer exists in the primary side and the secondary side at the same time. In the actual working process, Lr and Lrs can be mutually coupled and influenced, Crs is specially set to match Lrs, Lr and Cr, so that the resonant frequency of the converter during forward and reverse working is fr, the optimal soft switching effect and reliable synchronous rectification can be achieved during forward and reverse working, and the conversion efficiency is further improved.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (7)
1. A constant frequency synchronous rectification bidirectional DC/DC converter is characterized in that: the constant-frequency synchronous rectification bidirectional DC/DC converter comprises: a transformer, a first power structure provided at one side of the transformer to serve as a modulation circuit or a synchronous rectification circuit, a second power structure provided at the other side of the transformer to serve as a synchronous rectification circuit or a modulation circuit, a first resonance capacitor provided between the first power structure and the transformer to resonate with leakage inductance of the transformer, and a second resonance capacitor provided between the transformer and the second power structure to resonate with leakage inductance of the transformer; the first power architecture and the second power architecture are both bridge structures comprising a plurality of controllable semiconductor switching devices;
the resonant frequency of the leakage inductance resonance of the transformer and the resonant frequency of the leakage inductance resonance of the first resonant capacitor are the same as the resonant frequency of the leakage inductance resonance of the transformer and the resonant frequency of the second resonant capacitor is the same as the resonant frequency of the leakage inductance resonance of the transformer and the operating frequency of the first power architecture used as the modulation circuit and the operating frequency of the second power architecture used as the modulation circuit are fixed and are greater than or equal to the maximum value of the resonant frequency of the leakage inductance resonance of the transformer and the resonant frequency of the first resonant capacitor or the maximum value of the resonant frequency of the leakage inductance resonance of the transformer and the resonant frequency of the second resonant capacitor.
2. A constant frequency synchronous rectified bidirectional DC/DC converter as claimed in claim 1, wherein: the first power architecture comprises a first set of the controllable semiconductor switching devices controlled with a first drive signal, a second set of the controllable semiconductor switching devices controlled with a second drive signal; the second power architecture includes a third set of the controllable semiconductor switching devices controlled with a third drive signal, a fourth set of the controllable semiconductor switching devices controlled with a fourth drive signal;
when the first power architecture is used as a modulation circuit and the second power architecture is used as a synchronous rectification circuit, the first driving signal is complementary to the second driving signal, and the third driving signal is switched on after the first driving signal is switched on and passes through a preset auxiliary delay time; after the third driving signal is turned off and the preset auxiliary delay time passes, the first driving signal is turned off; the fourth driving signal is switched on after the second driving signal is switched on and passes through preset auxiliary delay time; after the fourth driving signal is turned off and the preset auxiliary delay time passes, the second driving signal is turned off;
when the second power architecture is used as a modulation circuit and the first power architecture is used as a synchronous rectification circuit, the third driving signal is complementary to the fourth driving signal; the third driving signal is switched on and after a preset auxiliary delay time, the first driving signal is switched on; after the first driving signal is turned off and the preset auxiliary delay time passes, the third driving signal is turned off; the fourth driving signal is switched on, and after a preset auxiliary delay time, the second driving signal is switched on; and after the second driving signal is turned off and the preset auxiliary delay time passes, the fourth driving signal is turned off.
3. A constant frequency synchronous rectified bidirectional DC/DC converter as claimed in claim 2, wherein: the first and second drive signals are complementary based on a preset dead time, and the third and fourth drive signals are complementary based on a preset dead time.
4. A constant frequency synchronous rectified bidirectional DC/DC converter as claimed in claim 2, wherein: the first power architecture and the second power architecture both adopt a full-bridge architecture or a half-bridge architecture.
5. The constant frequency synchronous rectification bidirectional DC/DC converter as claimed in claim 4, wherein: when the first power architecture adopts a full-bridge architecture, the first power architecture comprises a first controllable semiconductor switch device, a second controllable semiconductor switch device, a third controllable semiconductor switch device and a fourth controllable semiconductor switch device, the first controllable semiconductor switch device and the third controllable semiconductor switch device are connected in series to form a first bridge arm of the first power architecture, the second controllable semiconductor switch device and the fourth controllable semiconductor switch device are connected in series to form a second bridge arm of the first power architecture, the first controllable semiconductor switch device and the fourth controllable semiconductor switch device are controlled by the first driving signal, and the third controllable semiconductor switch device and the second controllable semiconductor switch device are controlled by the second driving signal;
when the second power architecture adopts a full-bridge architecture, the second power architecture comprises a fifth controllable semiconductor switch device, a sixth controllable semiconductor switch device, a seventh controllable semiconductor switch device and an eighth controllable semiconductor switch device, the fifth controllable semiconductor switch device and the seventh controllable semiconductor switch device are connected in series to form a first bridge arm of the second power architecture, the sixth controllable semiconductor switch device and the eighth controllable semiconductor switch device are connected in series to form a second bridge arm of the second power architecture, the fifth controllable semiconductor switch device and the eighth controllable semiconductor switch device are controlled by the third driving signal, and the seventh controllable semiconductor switch device and the sixth controllable semiconductor switch device are controlled by the fourth driving signal.
6. A constant frequency synchronous rectified bidirectional DC/DC converter as claimed in claim 1, wherein: the controllable semiconductor switching device adopts a MOSFET.
7. A power electronic device, characterized by: the power electronic device is a power electronic device requiring bidirectional flow of energy, the power electronic device comprising the fixed-frequency synchronous rectification bidirectional DC/DC converter as claimed in any one of claims 1 to 7.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111181411A (en) * | 2020-03-10 | 2020-05-19 | 上海科技大学 | Variable/fixed bus voltage ultra-wide gain range bidirectional dc/dc converter |
| CN111614147A (en) * | 2020-03-14 | 2020-09-01 | 青岛鼎信通讯股份有限公司 | Working mode and control method for improving efficiency of charging station energy router system |
| CN111614148A (en) * | 2020-03-14 | 2020-09-01 | 青岛鼎信通讯股份有限公司 | Charging station efficiency and dynamic performance improvement scheme based on energy router |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150229225A1 (en) * | 2014-02-12 | 2015-08-13 | Delta Electronics, Inc. | Resonant converters and control methods thereof |
| CN109039121A (en) * | 2018-10-31 | 2018-12-18 | 深圳市高益智能电气有限公司 | A kind of high-frequency isolation type ac-dc conversion circuit and its control method |
| CN109149948A (en) * | 2018-09-30 | 2019-01-04 | 西安特锐德智能充电科技有限公司 | Storage medium, two-way resonance circuit output voltage adjusting method, apparatus and system |
| CN109525119A (en) * | 2018-12-29 | 2019-03-26 | 深圳市新能安华技术有限公司 | A kind of LLC resonant converter using synchronous rectification control method |
| CN209233731U (en) * | 2018-12-29 | 2019-08-09 | 深圳市新能安华技术有限公司 | A kind of two-way LLC resonance DC-DC converter of holohedral symmetry type |
-
2019
- 2019-10-18 CN CN201910992600.3A patent/CN110868074A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150229225A1 (en) * | 2014-02-12 | 2015-08-13 | Delta Electronics, Inc. | Resonant converters and control methods thereof |
| CN109149948A (en) * | 2018-09-30 | 2019-01-04 | 西安特锐德智能充电科技有限公司 | Storage medium, two-way resonance circuit output voltage adjusting method, apparatus and system |
| CN109039121A (en) * | 2018-10-31 | 2018-12-18 | 深圳市高益智能电气有限公司 | A kind of high-frequency isolation type ac-dc conversion circuit and its control method |
| CN109525119A (en) * | 2018-12-29 | 2019-03-26 | 深圳市新能安华技术有限公司 | A kind of LLC resonant converter using synchronous rectification control method |
| CN209233731U (en) * | 2018-12-29 | 2019-08-09 | 深圳市新能安华技术有限公司 | A kind of two-way LLC resonance DC-DC converter of holohedral symmetry type |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111181411A (en) * | 2020-03-10 | 2020-05-19 | 上海科技大学 | Variable/fixed bus voltage ultra-wide gain range bidirectional dc/dc converter |
| CN111614147A (en) * | 2020-03-14 | 2020-09-01 | 青岛鼎信通讯股份有限公司 | Working mode and control method for improving efficiency of charging station energy router system |
| CN111614148A (en) * | 2020-03-14 | 2020-09-01 | 青岛鼎信通讯股份有限公司 | Charging station efficiency and dynamic performance improvement scheme based on energy router |
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