CN110211725A - A method of improving the carrier transmission performance of silver nanowires transparent conductive film - Google Patents
A method of improving the carrier transmission performance of silver nanowires transparent conductive film Download PDFInfo
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- CN110211725A CN110211725A CN201910500403.5A CN201910500403A CN110211725A CN 110211725 A CN110211725 A CN 110211725A CN 201910500403 A CN201910500403 A CN 201910500403A CN 110211725 A CN110211725 A CN 110211725A
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Abstract
The present invention provides a kind of methods of carrier transmission performance for improving silver nanowires transparent conductive film.The method of the present invention includes: to carry out electrochemical treatments in reference electrode and under electrode existence condition to the silver nanowires transparent conductive film being dipped in indifferent electrolyte solution, the polyvinylpyrrolidone insulating layer of silver nanowires electrically conducting transparent film is removed.The light transmittance height of Ag NW transparent conductive film prepared by the present invention, good conductivity, have a good application prospect.
Description
Technical field
The present invention relates to the technical fields of flexible transparent conducting film, transparent in particular to a kind of raising silver nanowires
The method of the carrier transmission performance of conductive film.
Background technique
Transparent electrode is electronic component that is a kind of while having good electric conductivity and translucency.As photoelectric conversion, letter
One of essential element of electronic equipments such as breath display and solid state lighting, transparent electrode also has received widespread attention.
Indium tin oxide (ITO) is due to being with the advantages such as high transparency (> 80%) and low areal resistance value (10ohm/sq)
The mainstay material of transparent electrode at present.But due to bad mechanical property (bending or fold below resistance sharply increase), be produced into
The problems such as this height and indium resource lack, indium seleno oxide is caused to be unable to satisfy the development side of electronic equipment flexibility, wearableization
To.In recent years, in order to find the material that may replace ITO, conductive polymer polymer, carbon nanotube, graphene, metal grill and
Metal nanometer line has obtained extensive research.In these studied materials, the stability of conductive polymer polymer is always
It not can solve.Carbon nanotube and graphene it is current production technology it is also immature, and high production cost.Metal grill has
Inevitably unauspicious interference phenomenon.Silver nanowires (Ag NWs) because its resistance to bend(ing), high light transmittance, it is good conductive and
Good selection of the advantages that thermal conductivity as production flexible transparent electrode material.
The preparation of silver nanowires (Ag NW) transparent electrode is to be coated with silver nanowires conductive film using liquid phase processing method
The grid of nano wire-nano wire (NW-NW) random crosslinking is formed in solid substrate.Light is saturating by the gap of Ag NW grid
Cross substrate, thus the factors such as surface density, diameter and the length of the light transmittance of conductive film depending on Ag NW.Electronics is along silver nanoparticle
Line transmitting, then other silver nanowires is passed to by the crosspoint NW-NW.Currently, preparing the more mature method of silver nanowires is
Polyol reduction method passes through reduction of ethylene glycol silver nitrate under the assistance of polyvinylpyrrolidone (PVP) and is prepared
(Chem.Mater.,2002,14,4736；Nano Lett.2003,3,955-960).In the method, PVP is as Ag NW's
The structure directing agent of stabilizer and crystal growth, introducing is the key point for successfully preparing Ag NW.But remaining PVP is very
Hardly possible passes through conventional washing methods removal.On the one hand, it is adsorbed on the surface Ag-NW by Ag-O coordinate bond, forms one layer of insulation
Layer.The insulating layer causes the crosspoint NW-NW to form the nonideal interface Ag-PVP-Ag, to produce biggish contact electricity
Resistance, the conductive capability for seriously hindering conduction of the electronics between NW-NW therefore silver nanowires transparent conductive film depend primarily on
The contact resistance in the crosspoint NW-NW.On the other hand, in practical applications especially in stacking device, PVP insulating layer can also hinder
Hinder conduction of the electronics between Ag NW transparent electrode and device active layers, to reduce the overall performance of device.It can be seen that
The presence of PVP insulating layer has seriously affected the carrier transmission capacity of silver nanowires transparent electrode, is that its practical application needs to be solved
One of main problem certainly.
In view of this, the present invention is specifically proposed.
Summary of the invention
The first object of the present invention is to provide a kind of carrier transmission performance of raising silver nanowires transparent conductive film
Method.In the method for the present invention, by using the mode of electrochemical treatments by the PVP insulating layer of silver nanowires electrically conducting transparent film
It removes, the carrier transmission performance of silver nanowires transparent conductive film can either be effectively improved, while will not also destroy flexible substrates.
In order to realize above-mentioned purpose of the invention, the following technical scheme is adopted:
A method of improving the carrier transmission performance of silver nanowires transparent conductive film, comprising: in reference electrode and right
Under electrode existence condition, the silver nanowires transparent conductive film being dipped in indifferent electrolyte solution is subjected to electrochemical treatments, it will be silver-colored
The PVP insulating layer of nano wire electrically conducting transparent film removes.
Preferably, in method of the present invention, the indifferent electrolyte solution be acidic electrolyte bath, alkaline electrolyte,
Or the solution of neutral electrolyte.
Preferably, in method of the present invention, the electrolyte solution is neutrality NaClO4Solution；It is furthermore preferred that institute
State NaClO4It includes: water, ethyl alcohol, the mixed solvent of one or more of propyl alcohol that solution, which prepares solvent for use,.
Preferably, in method of the present invention, the NaClO4The concentration of solution is 0.05~1mol/L.
Preferably, in method of the present invention, the reference electrode is including being Mercurous sulfate electrode；And/or
Described includes various noble metal electrodes and carbon electrode to electrode；It is furthermore preferred that described includes platinum electrode to electrode.
Preferably, in method of the present invention, the electrochemical treatments include constant potential processing or CV scan round
One of.
Preferably, in method of the present invention, the potential range of the electrochemical treatments is relative to Mercurous sulfate electrode
It is -0.1~-2.6V.
Preferably, in method of the present invention, the time of the electrochemical treatments is 1-120s.
Preferably, in method of the present invention, the method is still further comprised the silver nanoparticle after electrochemical treatments
The step that line transparent conductive film is cleaned and dried.
Meanwhile the present invention also provides by the obtained silver nanowires transparent conductive film of the method for the present invention.
Compared with prior art, the invention has the benefit that
1. using the surface method CLEAN Ag NW of electrochemical desorption in the present invention, current potential especially is being handled close to liberation of hydrogen
When current potential, a large amount of H atom is generated on the surface Ag NW, H atom forms [Ag-H] in conjunction with Ag NW and replaces nanowire surface
PVP so that PVP by the surface Ag NW be detached from.To, Ag-PVP-Ag interface transformation in Ag NW transparent conductive film at
The ideal interface Ag-Ag enhances electronics in the transmitting in electrically conducting transparent film surface between NW-NW.Moreover, by after electrochemical treatments
After Ag NW transparent conductive film is assembled into the electronic device of stacked, it can turn in the contact interface of device inside Ag-PVP- active layer
The interface for changing ideal Ag NW- active layer into, enhances carrier transport ability outside the face of transparent conductive film.
2. the method for the present invention have many advantages, such as it is simple, effective, quick, under atmospheric environment, room temperature and mild solution condition
Under can be operated.
3. the light transmittance of the Ag NW transparent conductive film of the method for the present invention preparation is high, good conductivity and bending ability are strong, have
Good application prospect.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described.
Fig. 1: it leads for the apparatus structure schematic diagram and carrier of electrochemically cleaning Ag NW surface PVP Ag NW is transparent
In electrolemma and transmission performance improves in stacked device schematic illustration；
Wherein, the apparatus structure schematic diagram that (A) is electrochemically cleaning Ag NWs surface PVP in Fig. 1；(B) transparent for Ag NW
Conductive film surface carriers transmission performance improves schematic illustration；It (C) is the stacked device constructed by transparent conductive film, face
Outer carrier transmission performance improves schematic illustration.
Fig. 2 is by cleaning 15s and SEM the and TEM phenogram without clean Ag NW；
Wherein, in Fig. 2, (A) is the SEM phenogram without clean Ag NW；(B) for without clean Ag NW's
TEM phenogram；(C) for by the SEM phenogram of clean Ag NW；(D) for by the TEM phenogram of clean Ag NW.
Fig. 3 be electrochemically cleaning before and after the processing Ag NW electrically conducting transparent film surface carriers transmission performance (surface resistance) and thoroughly
The phenogram of light rate；
Wherein, in Fig. 3, (A) is for surface resistance with the change rate of processing time under different potentials；(B) for difference
The Ag NW transparent conductive film of initial light transmission handles the variation of 15s electric conductivity and light transmittance under the current potential of -2.2V.
Fig. 4 is the phenogram of the outer carrier transmission performance of Ag NW electrically conducting transparent film surface；
Wherein, in Fig. 4, (A) is transparent conductive film in 0.5M NaClO4+2mM Fe(CN)6 4-/3-In electrolyte solution
CV characterization；It (B) is transparent conductive film in 0.5M NaClO4+2mM Fe(CN)6 4-/3-Impedance characterization in electrolyte solution.
Fig. 5: with the characterization of the stacked electronic device performance of Ag NW transparent conductive film assembling；
Wherein, in Fig. 5, (A) is the equivalent circuit of device；It (B) is the characterization of carrier transmission performance；(C) not for bending
With the J-V curve of charge carrier device single under degree；It (D) is the change rate of single charge carrier device resistance after the different numbers of bending.
Specific embodiment
Embodiment of the present invention is described in detail below in conjunction with embodiment, but those skilled in the art will
Understand, the following example is merely to illustrate the present invention, and is not construed as limiting the scope of the invention.It is not specified in embodiment specific
Condition person carries out according to conventional conditions or manufacturer's recommended conditions.Reagents or instruments used without specified manufacturer is
The conventional products that can be obtained by commercially available purchase.
Method provided by the present invention, be to by polyol reduction method (i.e. under the assistance of polyvinylpyrrolidone (PVP) lead to
Cross reduction of ethylene glycol silver nitrate) obtained silver nanowires (Ag NW) is formed by that silver nanowires is transparent to be led in substrate surface coating
Electrolemma carries out electrochemical treatments, to remove the PVP insulating layer on silver nanowires surface, to improve silver nanowires transparent conductive film
The method of carrier transmission performance.
The method of the present invention specific steps can refer to as follows:
(a) it will be scattered in solvent by the obtained silver nanowires of polyol reduction method, obtaining concentration is 0.2~1mg/mL
Silver nanowires dispersion liquid；
Preferably, the concentration of silver nanowires dispersion liquid is 0.6~0.8mg/L；
Wherein, the solvent to disperse silver nanowires includes the organic or inorganic solvents such as ethyl alcohol, water, acetone.
(b) it is coated with using rotary coating, Meyer bar, the coating methods such as squash type coating, by 100~1000 μ L silver nanowiress
After dispersion liquid is coated on the natural drying of 3 × 3cm substrate (such as PET base material) surface, transparent conductive film is obtained.
And it is as above formed by transparent conductive film, as object to electrochemical treatments in the present invention.
(c) transparent conductive film obtained by will be as above is soaked in electrolyte solution, and (electrolyte solution used is to silver nanowires
Corrosion-free effect) in, in reference electrode and under the conditions of to existing for electrode, electrochemical treatments are carried out, thus by silver nanowires table
The PVP in face is cleaned by electrochemical reaction.Removing PVP makes the contact interface of Ag-PVP-Ag be converted into ideal Ag-Ag circle
Face enhances electronics in the transmitting in electrically conducting transparent film surface between NW (nano wire)-NW (nano wire).Meanwhile it removing PVP and also will
Ag-PVP- activity bed boundary in stacked electronic device (being built by silver nanowires transparent conductive film) is changed into Ag- activity
Bed boundary, to enhance the purpose of carrier transport ability outside the face of transparent conductive film.
In this step, the electrolyte solution can dissolution/dilution be obtained in a solvent by electrolyte；
In a scheme of the invention, the electrolyte can be acidic electrolyte bath；Preferably, the acidic electrolysis
Matter is the acid for being halogen-free ion, comprising: perchloric acid, sulfuric acid etc.；
Or be neutral electrolyte, preferably, the neutral electrolyte is inorganic salts, such as NaClO4、KClO4、
Na2SO4、K2SO4、NaNO3、KNO3Deng；
It or is alkaline electrolyte, such as NaOH, KOH etc.；
Preferably, the electrolyte is sodium perchlorate (NaClO4)；
Preferably, the solvent can be one or more of organic or inorganic solvents such as water, ethyl alcohol, propyl alcohol.
In a scheme of the invention, the concentration 0.05-1mol/L of the electrolyte solution；Preferably, the electricity
The concentration of electrolyte solution is 0.4-0.6mol/L.
In a scheme of the invention, the reference electrode is the electrode for being halogen-free ion, such as: mereurous sulfate electricity
Extremely etc.；
And/or described includes: noble metal electrode and carbon electrode, such as platinum electrode (platinized platinum) etc. to electrode.
In a scheme of the invention, the electrochemical treatments can be constant potential processing, cyclic voltammetric (CV) scanning
Etc. electrochemical treatments mode.
In a scheme of the invention, electrochemical treatments current potential is -0.9~-2.6V, according to reference electrode used and right
The difference of electrode can be adjusted processing current potential；
Meanwhile the electrochemical treatments time is 1~120s, preferably, the electrochemical treatments time is 10~20s.
(d) transparent conductive film after electrochemical treatments is rinsed, to remove remaining electrolyte, to transparent after rinsing
Conductive film is dried.
Preferably, it can be dried using the modes such as being dried with nitrogen.
Include the following steps: as a present invention more preferably scheme, the removal of PVP insulating layer
By 100-1000 μ L by the way of spin application, concentration is Ag NW (silver nanowires) second of 0.2-1.0mg/mL
Alcohol dispersion liquid is coated on polyethylene terephthalate (PET) substrate surface, and transparent conductive film is prepared in natural drying.Then
Transparent conductive film is immersed in the NaClO that concentration is 0.05-1mol/L4Aqueous solution in, using Mercurous sulfate electrode as reference
Electrode, platinized platinum are used as to electrode, to the processing of Ag NW transparent conductive film row electrochemistry constant potential under the current potential of -0.9~-2.6V
1-120s, after treatment take out transparent conductive film and successively use ethyl alcohol, water by remaining NaClO4Rinsed clean, after the completion of rinsing
Transparent conductive film is dried up with nitrogen；
Preferably, the concentration of Ag NW alcohol dispersion liquid is 0.6-0.8mg/mL as above in step；
Preferably, as above in step, NaClO4Solubility be 0.4-0.6mol/L；
Preferably, the current potential of processing Ag NW transparent conductive film is -1.8~-2.4V as above in step；
Preferably, the transparent conductive film electrochemical treatments time is 10-20s as above in step.
Stacked can be further assembled by the obtained silver nanowires transparent conductive film of electrochemical treatments as above
Electronic device is converted into the interface of ideal Ag NW- active layer in the contact interface of device inside Ag-PVP- active layer, enhancing
Transmittability of the carrier outside electrically conducting transparent film surface, forms that light transmittance is high, transparent conductive film of good conductivity.
Embodiment 1
As follows, the surface PVP cleaning of silver nanowires in transparent conductive film is carried out:
Step 1: the Ag NW alcohol dispersion liquid of 400 μ L, 0.8mg/mL being divided 4 times by the way of spin application and is coated on
PET base material on piece spontaneously dries.
Step 2: the transparent conductive film prepared in step 1 is immersed in the NaClO of 0.1mol/L4Aqueous solution in, with sulphur
Sour mercurous electrode be reference electrode, platinized platinum be to electrode under the current potential of -1.4V electrochemical treatments 1s.After treatment will be transparent
Conductive film successively uses ethyl alcohol, water rinsed clean, is dried up transparent conductive film with nitrogen after the completion of rinsing.
The apparatus structure schematic diagram of electrochemically cleaning Ag NW surface PVP and carrier are transparent in Ag NW in embodiment 1
The schematic illustration of transmission performance improvement please refers to Fig. 1 in conductive film and in stacked device.
Embodiment 2
As follows, the surface PVP cleaning of silver nanowires in transparent conductive film is carried out:
Step 1: the Ag NW alcohol dispersion liquid of 400 μ L, 0.8mg/mL being divided 4 times by the way of spin application and is coated on
PET base material on piece spontaneously dries.
Step 2: the transparent conductive film prepared in step 1 is immersed in the NaClO of 0.1mol/L4Aqueous solution in, with sulphur
Sour mercurous electrode be reference electrode, platinized platinum be to electrode under the current potential of -1.4V electrochemical treatments 60s.After treatment will be saturating
Bright conductive film successively uses ethyl alcohol, water rinsed clean, is dried up transparent conductive film with nitrogen after the completion of rinsing.
Embodiment 3
As follows, the surface PVP cleaning of silver nanowires in transparent conductive film is carried out:
Step 1: the Ag NW alcohol dispersion liquid of 400 μ L, 0.8mg/mL being divided 4 times by the way of spin application and is coated on
PET base material on piece spontaneously dries.
Step 2: the transparent conductive film prepared in step 1 is immersed in the NaClO of 0.1mol/L4Aqueous solution in, with sulphur
Sour mercurous electrode be reference electrode, platinized platinum be to electrode under the current potential of -2.2V electrochemical treatments 5s.After treatment will be transparent
Conductive film successively uses ethyl alcohol, water rinsed clean, is dried up transparent conductive film with nitrogen after the completion of rinsing.
Embodiment 4
As follows, the surface PVP cleaning of silver nanowires in transparent conductive film is carried out:
Step 1: the Ag NW alcohol dispersion liquid of 400 μ L, 0.8mg/mL being divided 4 times by the way of spin application and is coated on
PET base material on piece spontaneously dries.
Step 2: the transparent conductive film prepared in step 1 is immersed in the NaClO of 0.5mol/L4Aqueous solution in, with sulphur
Sour mercurous electrode be reference electrode, platinized platinum be to electrode under the current potential of -1.4V electrochemical treatments 120s.After treatment will be saturating
Bright conductive film successively uses ethyl alcohol, water rinsed clean, is dried up transparent conductive film with nitrogen after the completion of rinsing.
Embodiment 5
As follows, the surface PVP cleaning of silver nanowires in transparent conductive film is carried out:
Step 1: the Ag NW alcohol dispersion liquid of 400 μ L, 0.8mg/mL being divided 4 times by the way of spin application and is coated on
PET base material on piece spontaneously dries.
Step 2: the transparent conductive film prepared in step 1 is immersed in the NaClO of 1mol/L4Aqueous solution in, with sulfuric acid
Mercurous electrode be reference electrode, platinized platinum be to electrode under the current potential of -2.2V electrochemical treatments 15s.After treatment will be transparent
Conductive film successively uses ethyl alcohol, water rinsed clean, is dried up transparent conductive film with nitrogen after the completion of rinsing.
Embodiment 6
As follows, the surface PVP cleaning of silver nanowires in transparent conductive film is carried out:
Step 1: the Ag NW alcohol dispersion liquid of 400 μ L, 0.8mg/mL being divided 4 times by the way of spin application and is coated on
PET base material on piece spontaneously dries.
Step 2: the transparent conductive film prepared in step 1 is immersed in the NaClO of 0.05mol/L4Aqueous solution in, with sulphur
Sour mercurous electrode be reference electrode, platinized platinum be to electrode under the current potential of -1.4V electrochemical treatments 15s.After treatment will be saturating
Bright conductive film successively uses ethyl alcohol, water rinsed clean, is dried up transparent conductive film with nitrogen after the completion of rinsing.
Experimental example 1
Using the transparent conductive film after not carrying out the clean transparent conductive film of PVP in embodiment 5 and cleaning as experimental material, into
The microcosmic Electronic Speculum of row, carrier transmission performance, and performance characterization during assembling, as a result as shown in Figure 2-5.
By the SEM results of comparison of Fig. 2 it is found that not carrying out obviously having on the surface Ag NW of PVP insulating layer removal thicker
PVP coats (Fig. 2 (A))；And after treatment, there is no PVP claddings (Fig. 2 (B)) on the surface Ag NW.Meanwhile by the TEM of Fig. 2
Results of comparison is not it is found that carry out in the Ag NW of PVP insulating layer removal, and in the region next to silver-colored crystalline texture, there are amorphous areas
Domain；And after treatment, this non-crystalline areas is not present.
From Fig. 3 result: the surface resistance of Ag NW transparent conductive film is significantly reduced in the early period of electrochemical treatments, and
After reach balance, and handle that the current potential more negative required processing time is shorter and effect is better (Fig. 3 (A))；In electrochemical treatments mistake
The surface resistance of Ag NW transparent conductive film has obtained a sharp decline and has had substantially no effect on its light transmittance (Fig. 3 (B)) in journey；It should
The removal that experimental result sufficiently demonstrates PVP can effectively improve transmission of the carrier in Ag NW transparent conductive film.
From Fig. 4 result: the CV cyclic curve of the Ag NW transparent conductive film after the cleaning of face shows a pair of of redox
Peak, the redox peaks belong to Fe (CN)6 3-/4-Redox reaction of the oxidation-reduction pair on the surface Ag NWAnd oxidation in the CV cyclic curve of the Ag NW transparent conductive film of PVP winding
Reduction peak sharply weakens (Fig. 4 (A)), which, which demonstrates PVP insulating layer and exist, inhibits electronics in the transmission on the surface Ag NW,
And then the Fe (CN) inhibited6 3-/4-Redox reaction of the oxidation-reduction pair on the surface Ag NW；Fig. 4 (B) is corresponding resistance
Anti- test is learnt that electronics is transparent in surface cleaning and PVP winding Ag NW by impedance data and equivalent circuit (Fig. 4 (B))
Conductive film/electrolyte solution interface transmission resistance is 21.7 and 382k Ω respectively；Above-mentioned experimental data proves the removal pole of PVP
The big carrier that reduces is transmitted in Ag NW transparent conductive film and the longitudinal of electrolyte solution interface.
Transparent conductive film after not clean transparent conductive film and cleaning is organized respectively as single charge carrier device, the equivalent electricity of device
Shown in road such as Fig. 5 (A).The current density control test of the device as prepared by different transparent conductive films is it is found that with saturating after cleaning
The carrier transmission performance of device prepared by bright conductive film is apparently higher than with not clean transparent conductive film (Fig. 5 (B)).Meanwhile
Prepared by transparent conductive film after the cleaning for device, even if carrying out 90 ° or 180 ° of bending, device will not be influenced
Carrier transmission performance (Fig. 5 (C)).Further, after 2000 bendings, by the transparent conductive film institute after cleaning
The sheet resistance for preparing device will increase 25% or so (Fig. 5 (D)), and for this is compared to ITO, performance is obviously improved.
Although illustrate and describing the present invention with specific embodiment, it will be appreciated that without departing substantially from of the invention
Many other change and modification can be made in the case where spirit and scope.It is, therefore, intended that in the following claims
Including belonging to all such changes and modifications in the scope of the invention.
Claims (10)
1. a kind of method for the carrier transmission performance for improving silver nanowires transparent conductive film characterized by comprising
In reference electrode and under electrode existence condition, by the silver nanowires transparent conductive film being dipped in indifferent electrolyte solution into
Row electrochemical treatments remove the polyvinylpyrrolidone insulating layer of silver nanowires electrically conducting transparent film.
2. the method according to claim 1, wherein the indifferent electrolyte solution is acidic electrolyte bath, alkalinity
The solution of electrolyte or neutral electrolyte；
Preferably, the acidic electrolyte bath is the acid for being halogen-free ion；
It is furthermore preferred that the acidic electrolyte bath includes: at least one of perchloric acid or sulfuric acid；
Preferably, the neutral electrolyte includes inorganic salts；
It is furthermore preferred that the neutral electrolyte includes: NaClO4, KClO4, Na2SO4, K2SO4, NaNO3Or KNO3In at least
It is a kind of；
Preferably, the alkaline electrolyte includes: at least one of NaOH or KOH.
3. according to the method described in claim 2, it is characterized in that, solvent used in the electrolyte solution includes: water, second
The mixed solvent of one or more of alcohol or propyl alcohol.
4. according to the method described in claim 3, it is characterized in that, the concentration of the electrolyte solution is 0.05~1mol/L.
5. the method according to claim 1, wherein the reference electrode includes all kinds of reference electrodes；
Preferably, the reference electrode is free from the Mercurous sulfate electrode of halide ion；
And/or described includes various noble metal electrodes and carbon electrode to electrode；
Preferably, described includes platinum electrode to electrode.
6. the method according to claim 1, wherein the electrochemical treatments include constant potential processing or circulation
One of voltammetric scan；
Preferably, the potential range of constant potential processing or cyclic voltammetry scan is defeated by -0.1V with respect to Mercurous sulfate electrode
Range.
7. the method according to claim 1, wherein the time of the electrochemical treatments is 1-120s.
8. the method according to claim 1, wherein still further comprise will be after electrochemical treatments for the method
The step that silver nanowires transparent conductive film is cleaned and dried.
9. by the obtained silver nanowires transparent conductive film of any one of claim 1-8 the method.
10. application of the silver nanowires transparent conductive film as claimed in claim 9 in electronics and photoelectric device；
And/or electronics or photoelectric device comprising silver nanowires transparent conductive film as claimed in claim 9.
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| CN111069626A (en) * | 2020-01-07 | 2020-04-28 | 南京信息职业技术学院 | Environment-friendly silver nanowire preparation method and silver nanowire film post-treatment method |
| CN112562888A (en) * | 2020-12-15 | 2021-03-26 | 哈尔滨工业大学（深圳） | Preparation method of silver nanowires and preparation method of transparent conductive film |
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| CN112562888A (en) * | 2020-12-15 | 2021-03-26 | 哈尔滨工业大学（深圳） | Preparation method of silver nanowires and preparation method of transparent conductive film |
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