CN110011549A - Voltage regulating rectification circuit system - Google Patents
Voltage regulating rectification circuit system Download PDFInfo
- Publication number
- CN110011549A CN110011549A CN201910052375.5A CN201910052375A CN110011549A CN 110011549 A CN110011549 A CN 110011549A CN 201910052375 A CN201910052375 A CN 201910052375A CN 110011549 A CN110011549 A CN 110011549A
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- CN
- China
- Prior art keywords
- rectification circuit
- circuit
- contact
- transistor
- connect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/539—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
- H02M7/5395—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The present invention is a kind of voltage regulating rectification circuit system comprising: an alternating current is converted into direct current by first rectification circuit；One signal generating circuit exports an operation signal；One switching circuit, connect with first rectification circuit and the signal generating circuit and receives the direct current and the operation signal, which carries out periodic switch according to the operation signal, and the switching circuit is by the converting direct-current power into alternating-current power；And second rectification circuit, it is connect with the switching circuit, and the alternating current is converted into direct current.
Description
Technical field
The present invention is a kind of related circuit system, especially a kind of voltage regulating rectification circuit system.
Background technique
Current various electronic products enclose a volage current transformer in purchase Shi Douhui, make the electric (exchange of high voltage in room
Electricity) it is converted into the operating voltage (direct current of lower voltage) that electronic product can be used, so that electronic product can be normal
Carry out using.
Figure 1A and Figure 1B is please referred to, is the schematic block diagram of prior art circuits system and the detailed circuit of switching circuit
Figure, Figure 1A and Figure 1B, which are used as, works as the common seamless rectification circuit system of former, and one end is matched with room for be electrically connected, the other end with bear
The alternating current of high voltage is converted into the direct current of required lower voltage when load system works by loading system connection.
Switching circuit 30 ' in this example uses traditional complementary metal oxide semiconductor (CMOS), and makes
High-side switch (high side switch) and low side switch (low side switch) are done with P channel MOS and N channel MOS,
In order to protect switching circuit 30 ', so power supply is needed before entry through the big inductance coil transformer 10 ' of one group of low frequency as guarantor
Shield.
In addition the switching circuit 30 ' of this structure is because there are drain-source body diode (drain source body
Diode), the problems such as and having parasitic capacitance (i.e. Cgd, Cgs, Cds) also needs after completing above-mentioned switch by another
The group big inductance coil transformer 20 ' of low frequency could export.
Fig. 2A and Fig. 2 B is please referred to, is the schematic block diagram of another prior art circuits system and the details of switching circuit
Circuit diagram, as current another common seamless rectification circuit system, same both ends are matched with room respectively to be supplied Fig. 2A and Fig. 2 B
The alternating current of high voltage, is converted into the direct current of required lower voltage when load system works by electricity and load system connection
Electricity.
Switching circuit 30 " in this example uses insulated gate bipolar transistor (IGBT), due to insulated gate bipolar electricity
Crystal needs electric current to drive, in order to protect insulated gate bipolar transistor to need in addition setting Zener diode (zener) or two poles
Body (diode), similarly again by also needing after switching circuit 30 " through the big 20 " ability of inductance coil transformer of another group of low frequency
Output.
In conclusion current circuit system has following problems:
1, more using part, energy loss is big；
2, more using part, cost；
3, more using part, heating problem；
4, more using part, the factor for needing to worry in circuit planning is more；
5, it under higher switching frequency, loses bigger；
6, additional protection circuit or correlated parts are needed；
7, one group of high voltage gate pole driver 40 ', 40 " of additional is needed, volume is larger.
Therefore, how to solve the problem above-mentioned and lack, as the present inventor to it is engaged in this industry related
Where the direction of manufacturer's improvement studied.
Summary of the invention
To improve above-mentioned problem, the present invention provides a kind of voltage regulating rectification circuit system using less part.
Another object of the present invention is to provide a kind of to lose less voltage regulating rectification circuit system under high frequency switching.
Another object of the present invention is to provide a kind of voltage regulating rectification circuit systems of province deprotection circuit.
In order to achieve the above object, the present invention provides a kind of voltage regulating rectification circuit system comprising:
One alternating current is converted into direct current by one the first rectification circuit；
One signal generating circuit exports an operation signal；
One switching circuit connect with first rectification circuit and the signal generating circuit and receives the direct current and operation news
Number, which carries out periodic switch according to the operation signal, and the switching circuit is by the converting direct-current power into alternating-current power；And
One the second rectification circuit, connect with the switching circuit, and the alternating current is converted into direct current.
Wherein, which is a bridge rectifier.
Wherein, which is a full-wave rectifying circuit.
Wherein, operation signal caused by the signal generating circuit is Pulse Width Modulation (PWM) signal.
Wherein, which connects with first contact, second contact, a third contact and one the 4th
Point, first contact, second contact and the third contact are connect with the signal generating circuit respectively, the 4th contact and this
The connection of two rectification circuits.
Wherein, which further includes first transistor and second transistor, and the one of first transistor
A gate is connect with first contact, and a gate of second transistor is connect with second contact, first transistor
The drain of source electrode and second transistor is connect with the third contact and the 4th contact.
Wherein, which is gallium nitride power transistor (GaN MOSFET).
Wherein, which is gallium nitride power transistor (GaN MOSFET).
Circuit system of the invention is low voltage drive, eliminates the various elements as protection, therefore reduce high frequency
Excess loss under switching action considers the design of integrated circuit system upper simpler, while reaching volume reduction, cost drop
Low advantage.
Detailed description of the invention
Figure 1A is the schematic block diagram of prior art circuits system；
Figure 1B is the detailed circuit figure of the switching circuit of prior art circuits system；
Fig. 2A is the schematic block diagram of another prior art circuits system；
Fig. 2 B is the detailed circuit figure of the switching circuit of another prior art circuits system；
Fig. 3 A is the schematic block diagram of circuit system of the present invention；
Fig. 3 B is the detailed circuit figure of the switching circuit of circuit system of the present invention；
Fig. 4 is the Property comparison figure of the present invention with the prior art.
Description of symbols
10 first rectification circuits
20 signal generating circuits
30 switching circuits
31 first contacts
32 second contacts
33 third contacts
34 the 4th contacts
35 first transistors
36 second transistors
40 second rectification circuits.
Specific embodiment
Above-mentioned purpose and its structure of the invention and characteristic functionally, the preferred embodiment according to attached drawing is said
It is bright.
Please refer to Fig. 3 A and Fig. 3 B, be circuit system of the present invention schematic block diagram and switching circuit detailed circuit figure,
Circuit system of the invention mainly includes the switching circuit 30 of signal generating circuit 20, one of the first rectification circuit 10, one
And second rectification circuit 40,10 one end of the first rectification circuit are matched with room for being electrically connected, the other end and switching circuit 30 connect
Connect, which connect with the switching circuit 30 and exports an operation signal, the switching circuit 30 and this second
Rectification circuit 40 connects, which connect with load system again.
Above-mentioned first rectification circuit 10 for example but is not limited to a bridge rectifier, and second rectification circuit 40 is for example
But it is not limited to a full-wave rectifying circuit as composed by Schottky diode, the operation news which generates
Number be Pulse Width Modulation (PWM) signal.
The switching circuit 30 has the first contact 31, second contacts, 32, third contacts 33 and one the
Four contacts 34, first contact 31, second contact 32 and the third contact 33 are connect with the signal generating circuit 20 respectively, should
4th contact 34 is connect with second rectification circuit 40.
Further, which further includes first transistor 35 and second transistor 36, this first
The gate of transistor 35 is connect with first contact 31, and the gate of second transistor 36 is connect with second contact 32, this
The source electrode of one transistor 35 and the drain of second transistor 36 are connect with the third contact 33 and the 4th contact 34, this first
The drain of transistor 35 connects an operating voltage VDD, and the source electrode of second transistor 36 connects a grounding point (GND), institute
Stating the first and second transistor 35,36 is gallium nitride power transistor (GaN MOSFET).
That is, room match for one high voltage of electricity output alternating current (such as AC90V ~ AC240V, but not as
Limit), the alternating current of high voltage by becoming the DC supply input of high voltage after first rectification circuit 10 to the switching circuit 30,
Operation signal caused by the signal generating circuit 20 (i.e. Pulse Width Modulation (PWM) signal) controls in the switching circuit 30
One, two transistors 35,36 open and close, which is transformed into the alternating current of high voltage in the alternating current of high-voltage high-frequency rate,
Give the alternating current transmission of high-voltage high-frequency rate to second rectification circuit 40 again, second rectification circuit 40 is by high-voltage high-frequency rate
AC rectification be supplied to load system at direct current.
Because the first and second transistor 35,36 uses gallium nitride power transistor (GaN MOSFET), there is higher switching
Frequency (>1M), bigger pressure-resistant effect (>600V), lower switching loss (<100m Ω) and lower driving voltage (0 ~
7V), therefore entire circuit system is made to eliminate other electronic components as protection, makes integrated circuit system more simple and volume
It is small, while the power loss of other parts is decreased, whole working efficiency is improved, heating problem is also reduced.
Referring to Fig. 4, for the Property comparison figure of the present invention and the prior art, it can be seen that under higher switching frequency,
Limiting efficiency will decline more, in switching frequency in the case where 10K, the prior art one (CMOS), the prior art two
(IGBT) and the efficiency of (GaN) of the invention has 99.5% or more；When switching frequency is in the case where 100K, the prior art one
(CMOS) for efficiency lower than 99.5%, the efficiency of the prior art two (IGBT) and (GaN) of the invention also possess 99.5% or more；When opening
Frequency is closed in the case where 1M, the efficiency of the prior art one (CMOS) is already below 98.5%, the efficiency of the prior art two (IGBT)
Already below 99.5%, and the efficiency of (GaN) of the invention still possesses 99.5% or more；It can be seen that the present invention is in higher switch
The effect of frequency is apparently higher than the prior art.
In conclusion voltage regulating rectification circuit system of the present invention has an advantage that compared to the prior art
1, circuit system overall volume is small；
2, few using element；
3, at low cost；
4, overall architecture is simple；
5, gallium nitride power transistor (GaN MOSFET) proof voltage is high；
6, gallium nitride power transistor (GaN MOSFET) switching loss is few；
7, gallium nitride power transistor (GaN MOSFET) driving voltage is low.
The present invention is elaborated above, a preferred embodiment described above, only of the invention, when
It cannot so limit the scope of implementation of the present invention.It is i.e. all according to equivalent changes and modifications made by the present patent application range etc., all should be still
Belong to patent covering scope of the invention.
Claims (8)
1. a kind of voltage regulating rectification circuit system characterized by comprising
One alternating current is converted into direct current by one the first rectification circuit；
One signal generating circuit exports an operation signal；
One switching circuit connect with first rectification circuit and the signal generating circuit and receives the direct current and operation news
Number, which carries out periodic switch according to the operation signal, and the switching circuit is by the converting direct-current power into alternating-current power；And
One the second rectification circuit, connect with the switching circuit, and the alternating current is converted into direct current.
2. voltage regulating rectification circuit system as described in claim 1, which is characterized in that wherein first rectification circuit is a bridge
Formula rectification circuit.
3. voltage regulating rectification circuit system as described in claim 1, which is characterized in that wherein second rectification circuit is one complete
Wave rectification circuit.
4. voltage regulating rectification circuit system as described in claim 1, which is characterized in that wherein caused by the signal generating circuit
Operation signal is a pulse width modulation signal.
5. voltage regulating rectification circuit system as described in claim 1, which is characterized in that wherein the switching circuit has one first
Contact, second contact, a third contact and the 4th contact, first contact, second contact and the third connect
Point is connect with the signal generating circuit respectively, and the 4th contact is connect with second rectification circuit.
6. voltage regulating rectification circuit system as claimed in claim 5, which is characterized in that wherein the switching circuit further includes one
One gate of one transistor and second transistor, first transistor is connect with first contact, second transistor
A gate connect with second contact, the drain of the source electrode of first transistor and second transistor and the third contact
And the 4th contact connection.
7. voltage regulating rectification circuit system as claimed in claim 6, which is characterized in that wherein first transistor is gallium nitride function
Rate transistor.
8. voltage regulating rectification circuit system as claimed in claim 6, which is characterized in that wherein second transistor is gallium nitride function
Rate transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910052375.5A CN110011549A (en) | 2019-01-21 | 2019-01-21 | Voltage regulating rectification circuit system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910052375.5A CN110011549A (en) | 2019-01-21 | 2019-01-21 | Voltage regulating rectification circuit system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110011549A true CN110011549A (en) | 2019-07-12 |
Family
ID=67165404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910052375.5A Pending CN110011549A (en) | 2019-01-21 | 2019-01-21 | Voltage regulating rectification circuit system |
Country Status (1)
| Country | Link |
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| CN (1) | CN110011549A (en) |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2643545Y (en) * | 2003-09-30 | 2004-09-22 | 莫文骅 | Speed governing device for harmonic suppression of series excited machine |
| CN201854073U (en) * | 2010-11-12 | 2011-06-01 | 林卓明 | Charger for controlling subsection charging current by pulse width |
| CN102835017A (en) * | 2010-03-25 | 2012-12-19 | 松下电器产业株式会社 | Inverter device and electric device using same |
| CN103155349A (en) * | 2010-08-18 | 2013-06-12 | 沃特拉半导体公司 | Switching circuits for extracting power from electric power source and associated methods |
| CN103715247A (en) * | 2012-09-28 | 2014-04-09 | 富士通株式会社 | Compound semiconductor layer and method of manufacturing the same |
| CN104716815A (en) * | 2013-12-16 | 2015-06-17 | 台达电子企业管理（上海）有限公司 | Power circuit, control method, power source system and packaging structure of power circuit |
| CN204887576U (en) * | 2015-07-28 | 2015-12-16 | 无锡畅欧光电科技有限公司 | LED controlling means with automatic adjustting of lighteness function |
| CN105637751A (en) * | 2013-10-09 | 2016-06-01 | 三菱电机株式会社 | In-vehicle charger |
| CN106849286A (en) * | 2017-04-18 | 2017-06-13 | 郑州正方科技有限公司 | A kind of self adaptation lithium battery pack charger |
| CN107248774A (en) * | 2016-03-28 | 2017-10-13 | 波音公司 | System architecture for the battery charger based on GaN base supply unit |
| CN107318272A (en) * | 2015-08-28 | 2017-11-03 | 富士电机株式会社 | Semiconductor device |
| CN107846151A (en) * | 2017-11-15 | 2018-03-27 | 华中科技大学 | A kind of efficient vehicle-mounted charge converter |
| CN107994789A (en) * | 2017-11-24 | 2018-05-04 | 浙江大学 | A kind of isolated form integrated form AC-DC converter based on non-bridge PFC and LLC resonance |
| CN108111024A (en) * | 2018-01-24 | 2018-06-01 | 深圳市英能达电子有限公司 | A kind of switching power circuit and its Switching Power Supply |
| CN207543000U (en) * | 2017-12-13 | 2018-06-26 | 深圳市澳德新能源科技有限公司 | Sound equipment switching power circuit |
| CN109075614A (en) * | 2016-02-08 | 2018-12-21 | 韦特里西提公司 | The control of PWM capacitor |
-
2019
- 2019-01-21 CN CN201910052375.5A patent/CN110011549A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2643545Y (en) * | 2003-09-30 | 2004-09-22 | 莫文骅 | Speed governing device for harmonic suppression of series excited machine |
| CN102835017A (en) * | 2010-03-25 | 2012-12-19 | 松下电器产业株式会社 | Inverter device and electric device using same |
| CN103155349A (en) * | 2010-08-18 | 2013-06-12 | 沃特拉半导体公司 | Switching circuits for extracting power from electric power source and associated methods |
| CN201854073U (en) * | 2010-11-12 | 2011-06-01 | 林卓明 | Charger for controlling subsection charging current by pulse width |
| CN103715247A (en) * | 2012-09-28 | 2014-04-09 | 富士通株式会社 | Compound semiconductor layer and method of manufacturing the same |
| CN105637751A (en) * | 2013-10-09 | 2016-06-01 | 三菱电机株式会社 | In-vehicle charger |
| CN104716815A (en) * | 2013-12-16 | 2015-06-17 | 台达电子企业管理（上海）有限公司 | Power circuit, control method, power source system and packaging structure of power circuit |
| CN204887576U (en) * | 2015-07-28 | 2015-12-16 | 无锡畅欧光电科技有限公司 | LED controlling means with automatic adjustting of lighteness function |
| CN107318272A (en) * | 2015-08-28 | 2017-11-03 | 富士电机株式会社 | Semiconductor device |
| CN109075614A (en) * | 2016-02-08 | 2018-12-21 | 韦特里西提公司 | The control of PWM capacitor |
| CN107248774A (en) * | 2016-03-28 | 2017-10-13 | 波音公司 | System architecture for the battery charger based on GaN base supply unit |
| CN106849286A (en) * | 2017-04-18 | 2017-06-13 | 郑州正方科技有限公司 | A kind of self adaptation lithium battery pack charger |
| CN107846151A (en) * | 2017-11-15 | 2018-03-27 | 华中科技大学 | A kind of efficient vehicle-mounted charge converter |
| CN107994789A (en) * | 2017-11-24 | 2018-05-04 | 浙江大学 | A kind of isolated form integrated form AC-DC converter based on non-bridge PFC and LLC resonance |
| CN207543000U (en) * | 2017-12-13 | 2018-06-26 | 深圳市澳德新能源科技有限公司 | Sound equipment switching power circuit |
| CN108111024A (en) * | 2018-01-24 | 2018-06-01 | 深圳市英能达电子有限公司 | A kind of switching power circuit and its Switching Power Supply |
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