CN109975904A - A kind of reflective DOE diffractive optical element of high-precision and preparation method thereof - Google Patents
A kind of reflective DOE diffractive optical element of high-precision and preparation method thereof Download PDFInfo
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- CN109975904A CN109975904A CN201910225327.1A CN201910225327A CN109975904A CN 109975904 A CN109975904 A CN 109975904A CN 201910225327 A CN201910225327 A CN 201910225327A CN 109975904 A CN109975904 A CN 109975904A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
Abstract
The present invention relates to the processing methods of the diffractive micro-optical device of microelectronic technique, specially a kind of reflective DOE diffractive optical element of high-precision, including monocrystalline silicon substrate (1), polysilicon layer (2) and lay photoetching mask plate (3), the polysilicon layer is patterned to form channel region, the two sides of the channel region include symmetrically arranged two low doped regions, and the outside of the low doped region includes symmetrically arranged two highly doped regions；Island photoresist layer is deposited in the channel region of the polysilicon layer, the low doped region and the highly doped regions；The island photoresist layer has first thickness and second thickness.The preparation method of the reflective DOE diffractive optical element of high-precision of the invention, which prepares reflective DOE device with microelectronic processing technology, can be effectively controlled pattern precision and reduction cost；By being optimized to polysilicon layer and lay photoetching mask plate, it is ensured that the precision of figure, and preparation method is optimized, extend its service life.
Description
Technical field
The present invention relates to the processing method of the diffractive micro-optical device of microelectronic technique, specially a kind of high-precision is reflective
DOE diffractive optical element and preparation method thereof.
Background technique
Micro-processing technology based on silicon microelectronics achieves huge achievement in past over half a century, energetically
The development for having pushed integrated circuit.Silicon is in nature first of constituent content, and people are to silicon and its derivative
Characteristic has enough understandings.The huge industry ability for having benefited from silicon substrate processing technology needs retrofit technique to support micro-
Optics of receiving also has obtained huge development.Micronano optical element have it is small in size, it is light-weight and the characteristics of be easily integrated.With
The development of photoelectron technology, micronano optical element have wide answer in biomedicine, the fields such as fiber optic communication and information processing
With.
Micronano optical element is made by the modern micro-nano technology technology of micron/submicron grade, including electricity
Beamlet direct writing technology, laser writing technology, mask set lithography, technique of gray-scale mask and heat melt technology etc..With modernization
Information apparatus requires optics fine structure, the micromation of device and integrated higher and higher, therefore using mutually treating as
Ripe microelectronic processing technology processing micronano optical structure becomes an important research direction.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of the reflective DOE diffractive optical element of high-precision, the high-precision is anti-
Penetrating formula DOE diffractive optical element can be mapped on the device of micro-structure using the diffraction of transmitting light, illumination, reflected light projects to other objects
Diffraction pattern can be presented on body.
Invention solves technical solution used by its technical problem: a kind of reflective DOE diffractive optical element of high-precision, including
Monocrystalline silicon substrate, polysilicon layer and lay photoetching mask plate, the polysilicon layer are located on monocrystalline silicon substrate, and the lay photoetching mask plate is set
It on the polysilicon layer, further include aluminium layer and protective layer, the aluminium layer is set on the polysilicon layer, and the protective layer is located on aluminium layer.
Invention solves technical solution used by its technical problem: a kind of system of the reflective DOE diffractive optical element of high-precision
Preparation Method includes the following steps:
A kind of reflective DOE diffractive optical element of high-precision, including monocrystalline silicon substrate (1), polysilicon layer (2) and lay photoetching mask plate
(3), the polysilicon layer (2) is located on monocrystalline silicon substrate (1), and the lay photoetching mask plate (3) is located on polysilicon layer (2), also
Including aluminium layer (4) and protective layer (5), the aluminium layer (4) is located on polysilicon layer (2), and the protective layer (5) is located at aluminium layer
(4) on；
The polysilicon layer is patterned to form channel region, the two sides of the channel region include symmetrically arranged two
Low doped region, the outside of the low doped region include symmetrically arranged two highly doped regions；In the polysilicon layer
Island photoresist layer is deposited in the channel region, the low doped region and the highly doped regions；The island photoresist layer tool
There are first thickness and second thickness, the first thickness is less than the second thickness, the island with the first thickness
Photoresist layer cover the channel region the edge and the low doped region.
Further, the lay photoetching mask plate includes: a substrate；One carbon nanotube layer, the carbon nanotube layer are set to
The surface of the second substrate；One patterning layers of chrome, is covered in surface of the carbon nanotube layer far from the second substrate, and described
The pattern for patterning layers of chrome is identical as the arrangement pattern of carbon nanotube in the carbon nanotube layer；One covering layer, the covering layer
It is covered in the patterning surface of the layers of chrome far from the second substrate.
Further, the carbon nanotube layer includes an at least carbon nano-tube film, the carbon nanotube in the carbon nano-tube film
It is parallel to the surface of the carbon nano-tube film and preferred orientation extends in the same direction, in the direction of extension adjacent carbon nanotube
It is joined end to end by Van der Waals force, at least partly carbon nanotube is parallel in the carbon nano-tube film and interval is arranged；The carbon is received
Mitron layer includes multiple carbon nano-tube films being stacked, the extending direction of carbon nanotube in two adjacent carbon nano-tube films
At a α angle, 30 ° of α≤65 ° <.
A kind of preparation method of the reflective DOE diffractive optical element of high-precision, includes the following steps:
Step 1: preparing, there is the mask of optical microstructures to be used for photoetching；
Step 2: for etching, which can be omitted the polysilicon that growth thickness is 1 μm on monocrystalline silicon substrate；
Step 3: photoetching and development are carried out to polysilicon layer using mask；
Step 4: polysilicon layer is etched.The depth of etching is depending on the circumstances, such as depth 250nm ±
40nm；Specifically, using exposure mask dry etching polysilicon layer, when etching, forms polymer on the side wall of photoetching offset plate figure；To
The mixed gas with ion bombardment characteristic and reactivity is passed through in the etching cavity, what is formed when with to dry etching is poly-
It closes object and carries out plasma-based processing；
Step 5: aluminium layer is plated on figure as reflecting layer；
Step 6: the passivation layer in transparent protective film or wafer process is grown on figure.
Further: the transparent protective film is silver nanowires base transparent conducting film；Used when spraying concentration for
The silver nanowires suspension of 0.1mg/ml -10mg/ml, spray time 10s-5min, rotation speed be 3000 revs/min -
8000 revs/min.
Further, the preparation process of the passivation layer uses PECVD.
Advantageous effect of the invention is: the preparation method of the reflective DOE diffractive optical element of high-precision of the invention is added with microelectronics
Work technique prepares reflective DOE device and can be effectively controlled pattern precision and reduce cost；It can be with as etch layer using polysilicon
Accurate control etching depth is to reach the best diffraction efficiency of device.By being optimized to polysilicon layer and lay photoetching mask plate,
Ensure the precision of figure, and preparation method is optimized, extends its service life.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the reflective DOE diffractive optical element of high-precision of the invention.
Detailed description of the invention: 1, monocrystalline silicon substrate, 2, polysilicon layer, 3, lay photoetching mask plate, 4, aluminium layer, 5, protective layer.
Specific embodiment
Invention is described in further detail presently in connection with attached drawing.These attached drawings are simplified schematic diagram, only to show
Meaning mode illustrates the basic structure of invention, therefore it only shows and invents related composition.
A kind of reflective DOE diffractive optical element of high-precision, including monocrystalline silicon substrate (1), polysilicon layer (2) and lay photoetching mask plate
(3), the polysilicon layer (2) is located on monocrystalline silicon substrate (1), and the lay photoetching mask plate (3) is located on polysilicon layer (2), also
Including aluminium layer (4) and protective layer (5), the aluminium layer (4) is located on polysilicon layer (2), and the protective layer (5) is located at aluminium layer (4)
On；
The polysilicon layer is patterned to form channel region, the two sides of the channel region include symmetrically arranged two
Low doped region, the outside of the low doped region include symmetrically arranged two highly doped regions；In the polysilicon layer
Island photoresist layer is deposited in the channel region, the low doped region and the highly doped regions；The island photoresist layer tool
There are first thickness and second thickness, the first thickness is less than the second thickness, the island with the first thickness
Photoresist layer cover the channel region the edge and the low doped region.
Further, the lay photoetching mask plate includes: a substrate；One carbon nanotube layer, the carbon nanotube layer are set to
The surface of the second substrate；One patterning layers of chrome, is covered in surface of the carbon nanotube layer far from the second substrate, and described
The pattern for patterning layers of chrome is identical as the arrangement pattern of carbon nanotube in the carbon nanotube layer；One covering layer, the covering layer
It is covered in the patterning surface of the layers of chrome far from the second substrate.
Further, the carbon nanotube layer includes an at least carbon nano-tube film, the carbon nanotube in the carbon nano-tube film
It is parallel to the surface of the carbon nano-tube film and preferred orientation extends in the same direction, in the direction of extension adjacent carbon nanotube
It is joined end to end by Van der Waals force, at least partly carbon nanotube is parallel in the carbon nano-tube film and interval is arranged；The carbon is received
Mitron layer includes multiple carbon nano-tube films being stacked, the extending direction of carbon nanotube in two adjacent carbon nano-tube films
Angle at 45 °.
A kind of preparation method of the reflective DOE diffractive optical element of high-precision, includes the following steps:
Step 1: preparing, there is the mask of optical microstructures to be used for photoetching；
Step 2: the polysilicon that growth thickness is 1 μm on monocrystalline silicon substrate is for etching；
Step 3: photoetching and development are carried out to polysilicon layer using mask；
Step 4: depth 250nm ± 40nm is etched to polysilicon layer；Specifically, more using exposure mask dry etching
Crystal silicon layer, when etching, form polymer on the side wall of photoetching offset plate figure；Be passed through into the etching cavity argon gas and oxygen by
According to the mixed gas of the volume ratio of 1:1, the polymer formed when with to dry etching carries out plasma-based processing；
Step 5: plating aluminium layer as reflecting layer on figure, the aluminium layer with a thickness of 50nm ± 10nm；
Step 6: transparent protective film is grown on figure.The transparent protective film, which is that silver nanowires base is transparent, leads
Conductive film；Use concentration for the silver nanowires suspension of 5mg/ml when spraying, spray time 1min, rotation speed 5000
Rev/min.
It is enlightenment with the above-mentioned desirable embodiment according to invention, through the above description, relevant staff is complete
Can without departing from the scope of the technological thought of the present invention', carry out various changes and amendments, this invention it is technical
Range is not limited to the contents of the specification, it is necessary to which the technical scope thereof is determined according to the scope of the claim.
Claims (7)
1. a kind of reflective DOE diffractive optical element of high-precision, it is characterised in that: including monocrystalline silicon substrate (1), polysilicon layer (2) and
Lay photoetching mask plate (3), the polysilicon layer (2) are located on monocrystalline silicon substrate (1), and the lay photoetching mask plate (3) is located at polysilicon
It further include aluminium layer (4) and protective layer (5), the aluminium layer (4) is located on polysilicon layer (2), and the protective layer (5) sets on layer (2)
On aluminium layer (4)；
The polysilicon layer is patterned to form channel region, the two sides of the channel region include symmetrically arranged two low-mixs
Miscellaneous region, the outside of the low doped region include symmetrically arranged two highly doped regions；Described in the polysilicon layer
Island photoresist layer is deposited in channel region, the low doped region and the highly doped regions；The island photoresist layer has the
One thickness and second thickness, the first thickness are less than the second thickness, the island photoresist with the first thickness
The edge of the layer covering channel region and the low doped region.
2. the reflective DOE diffractive optical element of high-precision as described in claim 1, which is characterized in that the lay photoetching mask plate includes:
One substrate；One carbon nanotube layer, the carbon nanotube layer are set to the surface of the second substrate；One patterning layers of chrome, covering
In surface of the carbon nanotube layer far from the second substrate, and carbon in the pattern and the carbon nanotube layer of the patterning layers of chrome
The arrangement pattern of nanotube is identical；One covering layer, the covering layer are covered in the patterning table of the layers of chrome far from the second substrate
Face.
3. the reflective DOE diffractive optical element of high-precision as described in claim 1, which is characterized in that the carbon nanotube layer includes
An at least carbon nano-tube film, the carbon nanotube in the carbon nano-tube film are parallel to the surface of the carbon nano-tube film and along same side
Extend to preferred orientation, adjacent carbon nanotube is joined end to end by Van der Waals force in the direction of extension, the carbon nano-tube film
In at least partly carbon nanotube is parallel and interval setting；The carbon nanotube layer includes multiple carbon nano-tube films being stacked,
The extending direction of carbon nanotube is at a α angle, 30 ° of α≤65 ° < in two adjacent carbon nano-tube films.
4. a kind of preparation method of the reflective DOE diffractive optical element of high-precision, characterized by the following steps: step 1: system
The standby mask with optical microstructures is used for photoetching；
Step 2: photoetching and development are carried out to polysilicon layer using mask；
Step 3: polysilicon layer is etched；
Step 4: aluminium layer is plated on figure as reflecting layer；
Step 5: the passivation layer in transparent protective film or wafer process is grown on figure.
5. the preparation method of the reflective DOE diffractive optical element of high-precision as claimed in claim 4, it is characterised in that: described is saturating
Bright protective film is silver nanowires base transparent conducting film；Use concentration for the silver nanoparticle of 0.1mg/ml -10mg/ml when spraying
Line suspension, spray time 10s-5min, rotation speed are 3000 revs/min -8000 revs/min；The system of the passivation layer
Standby technique uses PECVD.
6. the preparation method of the reflective DOE diffractive optical element of high-precision as claimed in claim 4, it is characterised in that: step 1 with
It further include that the polysilicon that growth thickness is 1 μm on monocrystalline silicon substrate is used to etch between step 2.
7. the preparation method of the reflective DOE diffractive optical element of high-precision as claimed in claim 4, it is characterised in that: the step
Three kinds use exposure mask dry etching polysilicon layers, and when etching forms polymer on the side wall of photoetching offset plate figure；To the etching
The mixed gas with ion bombardment characteristic and reactivity is passed through in cavity, the polymer formed when with to dry etching carries out
Plasma-based processing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910225327.1A CN109975904A (en) | 2019-03-22 | 2019-03-22 | A kind of reflective DOE diffractive optical element of high-precision and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910225327.1A CN109975904A (en) | 2019-03-22 | 2019-03-22 | A kind of reflective DOE diffractive optical element of high-precision and preparation method thereof |
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Citations (5)
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| CN108132585A (en) * | 2016-12-01 | 2018-06-08 | 清华大学 | The preparation method of micro nano structure |
| CN108132582A (en) * | 2016-12-01 | 2018-06-08 | 清华大学 | Photo mask board |
| CN108155244A (en) * | 2017-12-25 | 2018-06-12 | 深圳市晶特智造科技有限公司 | Groove-shaped gate associated transistor and preparation method thereof |
| CN108717215A (en) * | 2018-05-18 | 2018-10-30 | 无锡中微掩模电子有限公司 | A kind of reflective DOE diffractive optical elements and preparation method thereof |
| CN109037037A (en) * | 2018-09-27 | 2018-12-18 | 武汉华星光电技术有限公司 | Low-temperature polycrystalline silicon layer, thin film transistor and its manufacturing method |
-
2019
- 2019-03-22 CN CN201910225327.1A patent/CN109975904A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108132585A (en) * | 2016-12-01 | 2018-06-08 | 清华大学 | The preparation method of micro nano structure |
| CN108132582A (en) * | 2016-12-01 | 2018-06-08 | 清华大学 | Photo mask board |
| CN108155244A (en) * | 2017-12-25 | 2018-06-12 | 深圳市晶特智造科技有限公司 | Groove-shaped gate associated transistor and preparation method thereof |
| CN108717215A (en) * | 2018-05-18 | 2018-10-30 | 无锡中微掩模电子有限公司 | A kind of reflective DOE diffractive optical elements and preparation method thereof |
| CN109037037A (en) * | 2018-09-27 | 2018-12-18 | 武汉华星光电技术有限公司 | Low-temperature polycrystalline silicon layer, thin film transistor and its manufacturing method |
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