CN109534317B - Preparation method of carbon nanotube film - Google Patents
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- CN109534317B CN109534317B CN201710860361.7A CN201710860361A CN109534317B CN 109534317 B CN109534317 B CN 109534317B CN 201710860361 A CN201710860361 A CN 201710860361A CN 109534317 B CN109534317 B CN 109534317B
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Abstract
The invention provides a preparation method of a carbon nano tube film, which comprises the following steps: (1) dripping the carbon nanotube solution with the concentration of less than 1mg/mL and dispersed by the surfactant on a substrate; (2) continuously and uniformly flowing the carbon nanotube solution through the surface of the substrate by inclining the substrate without overflowing the surface of the substrate until the carbon nanotube solution is coated on the surface of the substrate; and (3) continuing to dry the substrate, cleaning the surface of the substrate to substantially remove the surfactant and blow-drying to obtain the carbon nanotube film. The method does not need any special device and complicated working procedures, has simple preparation process operation and low cost, saves the carbon nanotube solution, is beneficial to the preparation of the nanotube film with larger area and uniformly distributed carbon, and further promotes the wide application of the carbon nanotube film, in particular to the application in large-scale integrated circuits.
Description
Technical Field
The invention belongs to the field of nano material preparation, and particularly relates to a preparation method of a carbon nano tube film.
Background
Since the discovery of carbon nanotubes in the nineties of the twentieth century, carbon nanotubes have attracted considerable attention in a wide variety of fields such as optoelectronic devices, composite materials, biological and chemical sensors, etc. due to their unique structures and excellent properties of force, heat, light, electricity, etc. In particular, carbon nanotubes can be fabricated as thin films to be used in the field of optoelectronics (e.g., integrated circuits).
The carbon nanotube film prepared by the method has the advantages of highlighting the structure of the carbon nanotube in the aspect of mechanics, but the film contains both metal type carbon nanotubes and semiconductor type carbon nanotubes, and simultaneously also has residual metal catalyst, thereby limiting the application of the carbon nanotubes in the field of photoelectricity.
The carbon nano tube can be dispersed in the solution and separated by utilizing the existing separation technology, so that the separation of the metal type carbon nano tube and the semiconductor type carbon nano tube is realized, and even the carbon nano tube with a single chiral structure can be obtained by separation. Then, the separated metal type carbon nano tube and the semiconductor type carbon nano tube are used for preparing the carbon nano tube film, so that the application field and the range of the carbon nano tube film are expanded.
The current methods for preparing films by using carbon nanotube solutions mainly include spin coating, dip coating, suction filtration and drop coating. However, these methods have disadvantages, and the application range thereof is limited. For example, spin coating wastes more solution during the film formation process; in the dip coating method, the solution dosage is large, the film forming is slow, and the substrate is usually modified by adopting organic matters; the membrane prepared by the suction filtration method is limited by the size of the filter membrane, the membrane on the filter paper needs to be transferred, and the organic matter is used for dissolving the filter membrane and doping the carbon nano tube in the transfer process. In addition, the dispensing method is easy to handle, but is greatly affected by the coffee ring effect, and it is difficult to form a uniform thin film.
In order to make carbon nanotubes practical for large-scale integrated circuits, it is necessary to prepare a carbon nanotube film with a large area and uniform distribution. In view of the above, there is still a need to provide a method for preparing a carbon nanotube film with a large area and uniform distribution by using a small amount of solution.
Disclosure of Invention
Accordingly, the present invention has been made keeping in mind the above problems and deficiencies of the prior art, and an object of the present invention is to provide a method for preparing a carbon nanotube film, which can simply and efficiently prepare a carbon nanotube film having a large area and a uniform distribution using a small amount of a solution.
The purpose of the invention is realized by the following technical scheme.
The invention provides a preparation method of a carbon nano tube film, which comprises the following steps:
(1) dripping the carbon nanotube solution with the concentration of less than 1mg/mL and dispersed by the surfactant on a substrate;
(2) continuously and uniformly flowing the carbon nanotube solution through the surface of the substrate by inclining the substrate without overflowing the surface of the substrate until the carbon nanotube solution is coated on the surface of the substrate;
(3) and drying the substrate, washing the surface of the substrate to basically remove the surfactant coated on the surface of the carbon nano tube, and drying by blowing to obtain the carbon nano tube film.
The present inventors have unexpectedly found that a carbon nanotube film having a large area and a uniform distribution can be prepared by the preparation method according to the present invention, particularly by inclining the substrate so that the carbon nanotube solution dispersed with the surfactant at a concentration of 1mg/mL or less continuously and uniformly flows on the surface of the substrate.
According to the preparation method provided by the invention, in the flowing process of the carbon nano tube solution, the solvent is continuously evaporated, and finally the carbon nano tube solution is uniformly coated on the surface of the substrate. Without wishing to be bound by theory, it is believed that the continuous uniform flow of the carbon nanotube solution over the substrate surface avoids or inhibits the coffee ring effect, allowing the carbon nanotubes to be uniformly distributed over the substrate surface, while also avoiding or inhibiting shrinkage due to solvent evaporation, thereby producing a larger area of carbon nanotube film.
According to the preparation method provided by the invention, the concentration of the carbon nano tube solution is below 1 mg/mL. The concentration of the carbon nanotube solution is too high, the solution has poor fluidity, the coffee ring effect cannot be effectively prevented, and a uniform carbon nanotube film is difficult to prepare. However, if the concentration of the carbon nanotube solution is too low, it takes a long time to remove the solvent, resulting in low efficiency.
In some embodiments, the concentration of the carbon nanotube solution is 20 to 100. mu.g/mL, in some embodiments 40 to 100. mu.g/mL, and in some embodiments 60 to 80. mu.g/mL.
According to the preparation method provided by the invention, the carbon nanotube solution is a carbon nanotube aqueous solution.
According to the preparation method provided by the invention, the surfactant is selected from one or more of an anionic surfactant, a cationic surfactant, an amphoteric surfactant and a nonionic surfactant. In some preferred embodiments, the surfactant is an anionic surfactant.
According to the preparation method provided by the invention, the anionic surfactant is selected from one or more of sodium dodecyl sulfate, sodium dodecyl benzene sulfonate, sodium deoxycholate and sodium cholate.
According to the preparation method provided by the invention, the cationic surfactant is selected from one or more of cetyl trimethyl ammonium bromide, cetyl-4-vinyl pyridine bromide salt, ethyl-4-vinyl pyridine salt and 4-vinyl pyridine.
According to the preparation method provided by the invention, the amphoteric surfactant is one or more selected from sodium dodecyl aminopropionate, dodecyl dimethyl betaine, dodecyl ethoxy sulfobetaine, dodecyl hydroxypropyl sulfobetaine, dodecyl sulfopropyl betaine, tetradecylamidopropyl hydroxypropyl sulfobetaine, decyl hydroxypropyl sulfobetaine and octadecyl dihydroxyethyl amine oxide.
According to the preparation method provided by the invention, the nonionic surfactant is triton X-305.
According to the preparation method provided by the invention, the amount of the surfactant in the carbon nanotube solution is 0.1-5 wt%, preferably 0.5-1 wt%.
According to the preparation method provided by the invention, the carbon nanotube solution is selected from a multi-wall carbon nanotube solution and a single-wall carbon nanotube solution. In some embodiments, the carbon nanotube solution is a metallic-type single-walled carbon nanotube solution, in some embodiments a semiconducting-type single-walled carbon nanotube solution, and in some embodiments a single chiral carbon nanotube solution.
In some preferred embodiments, the carbon nanotubes in the carbon nanotube solution are metallic type single-walled carbon nanotubes having a purity of greater than 90% or semiconducting type single-walled carbon nanotubes having a purity of greater than 99%.
According to the preparation method provided by the invention, the substrate in the step (1) can be a rigid substrate or a flexible substrate.
In some embodiments, the rigid substrate is a Si substrate, SiO2a/Si substrate, a quartz substrate or a glass substrate.
In some embodiments, the flexible substrate is a polyethylene terephthalate (PET) substrate, a polyethylene naphthalate (PEN) substrate, or a Polydimethylsiloxane (PDMS) substrate.
According to the preparation method provided by the invention, the substrate size is not specially required, and the preparation method can be confirmed according to the final application of the carbon nanotube film. In some embodiments, the substrate has dimensions of 1cm by 1cm to 5cm by 5cm, and in some embodiments 3.5cm by 3.5 cm.
According to the preparation method provided by the invention, the amount of the carbon nanotube solution used in the step (1) can be determined according to the size of the substrate, the concentration of the carbon nanotube solution and the performance requirements of the carbon nanotube film, such as the density of the carbon nanotube film.
In some embodiments, the amount of the carbon nanotube solution used in step (1) is 5 to 20. mu.L/cm2And in some embodiments 12-17. mu.L/cm2。
According to the present invention, there is provided a production process wherein the step (2) is carried out at 20 to 40 ℃, preferably 23 to 28 ℃.
According to the production method provided by the present invention, in the step (2), the substrate can be stably, continuously and moderately inclined by a person or by means of a mechanical device.
According to the present invention, there is provided a production method wherein the substrate is dried at 20 to 100 ℃ in step (3), preferably at 23 to 30 ℃.
According to the preparation method provided by the invention, the reagent used for washing the surface of the substrate in the step (3) is selected from one or more of deionized water and organic solvent.
According to the production method provided by the present invention, wherein examples of suitable organic solvents include ethanol, isopropanol and acetone.
In some embodiments, the substrate surface is cleaned in step (3) by rinsing the substrate surface with one or more of deionized water, ethanol, and acetone, respectively.
According to the present invention, there is provided the production method wherein the surface of the substrate is blow-dried using an inert gas such as nitrogen in the step (3).
The preparation method provided by the invention has the following advantages:
(1) the method can prepare the carbon nanotube film with larger area and uniform distribution, wherein the carbon nanotube film can be a multi-wall carbon nanotube film or a single-wall carbon nanotube film, in particular to a metal type single-wall carbon nanotube film or a semiconductor type single-wall carbon nanotube film, even a single chiral structure carbon nanotube film.
(2) The method does not need any special device and complicated working procedures, has simple preparation process operation, low cost and less consumption of the carbon nanotube solution, saves the carbon nanotube solution, is beneficial to the preparation of the nanotube film with larger area and uniformly distributed carbon, and further promotes the wide application of the carbon nanotube film, especially the application in large-scale integrated circuits.
Drawings
Embodiments of the invention are described in detail below with reference to the attached drawing figures, wherein:
FIG. 1 is a schematic diagram of the division of the surface region of a substrate, wherein 1-9 are the numbers of the regions on the surface of the substrate;
FIG. 2 is a Scanning Electron Microscope (SEM) picture of the carbon nanotube film of example 1, wherein FIGS. 2a-i show SEM images measured within substrate surface areas 1-9, respectively, of FIG. 1;
fig. 3 is a Scanning Electron Microscope (SEM) picture of the carbon nanotube film of example 2, wherein fig. 3a-i show SEM images measured in the substrate surface areas 1-9 of fig. 1, respectively.
Fig. 4 is a Scanning Electron Microscope (SEM) picture of the carbon nanotube film of example 3, wherein fig. 4a-i show SEM images measured in the substrate surface areas 1-9 of fig. 1, respectively.
Fig. 5 is a Scanning Electron Microscope (SEM) picture of the carbon nanotube film of example 4, wherein fig. 5a-i show SEM images measured in the substrate surface areas 1-9 of fig. 1, respectively.
Fig. 6 is a Scanning Electron Microscope (SEM) picture of the carbon nanotube film of example 5, wherein fig. 6a-i show SEM images measured in the substrate surface areas 1-9 of fig. 1, respectively.
Detailed Description
The present invention is described in further detail below with reference to specific embodiments, which are given for the purpose of illustration only and are not intended to limit the scope of the invention.
Example 1
Preparing a carbon nanotube film by the following method:
(1) taking a piece of SiO 3.5cm × 3.5cm2a/Si substrate of which SiO2Is 500nm, is sequentially and respectively ultrasonically cleaned for 20 minutes by deionized water, acetone and ethanol, then is rinsed by the deionized water and is dried by nitrogen gas, and the cleaned SiO is obtained2a/Si substrate.
(2) And separating and removing the metal single-walled carbon nanotubes in the single-walled carbon nanotube aqueous solution by adopting gel chromatography to obtain the semiconductor single-walled carbon nanotube aqueous solution with the purity of more than 99 percent and the dispersed sodium deoxycholate with the mass fraction of 0.5 percent, wherein the concentration of the carbon nanotubes in the aqueous solution is 60 mu g/mL.
(3) Using a micro liquid-transfering gun to suck 200 mu L of the semiconductor single-walled carbon nanotube aqueous solution obtained in the step (2), and dripping the semiconductor single-walled carbon nanotube aqueous solution on the SiO cleaned in the step (1)2SiO of/Si substrate2On the surface.
(4) After the semiconductor single-walled carbon nanotube aqueous solution is dripped, the SiO is artificially, stably, continuously and moderately inclined at the temperature of between 25 and 28 DEG C2The silicon/silicon substrate enables the carbon nano tube aqueous solution to continuously, uniformly and stably flow through SiO of the substrate2Different positions of the surface but without overflowing SiO2And the solvent water is continuously evaporated in the flowing process of the/Si substrate until the carbon nano tube solution is uniformly coated on the surface of the substrate.
(5) And continuously drying the substrate at 25-28 ℃, then sequentially washing the surface of the substrate by using deionized water, ethanol and acetone to remove the surfactant sodium deoxycholate, and then drying by using nitrogen to obtain the carbon nano tube film.
Referring to FIG. 1, utilizingThe scanning electron microscope was used to characterize the carbon nanotube film in the 9 regions shown in FIG. 1, and the results are shown in FIG. 2. Fig. 2a-i are scanning electron microscope pictures of corresponding regions in fig. 1, respectively. As is clear from FIG. 2, SiO2The carbon nanotube film coated on the surface of the Si substrate is uniformly distributed.
Example 2
Preparing a carbon nanotube film by the following method:
(1) taking a 1cm × 1cm piece of SiO2a/Si substrate of which SiO2Is 500nm, is sequentially and respectively ultrasonically cleaned for 20 minutes by deionized water, acetone and ethanol, then is rinsed by the deionized water and is dried by nitrogen gas, and the cleaned SiO is obtained2a/Si substrate.
(2) And separating and removing the metal single-walled carbon nanotubes in the aqueous solution of the single-walled carbon nanotubes by adopting gel chromatography to obtain the aqueous solution of the semiconductor single-walled carbon nanotubes with the purity of more than 99 percent, which is dispersed by lauryl sodium sulfate with the mass fraction of 1 percent, wherein the concentration of the carbon nanotubes in the aqueous solution is 60 mu g/mL.
(3) Using a micro liquid transfer gun to suck 20 mu L of the semiconductor single-walled carbon nanotube aqueous solution obtained in the step (2), and dripping the semiconductor single-walled carbon nanotube aqueous solution on the SiO cleaned in the step (1)2SiO of/Si substrate2On the surface.
(4) After the semiconductor single-walled carbon nanotube aqueous solution is dripped, the SiO is artificially, stably, continuously and moderately inclined at the temperature of between 25 and 28 DEG C2The silicon/silicon substrate enables the carbon nano tube aqueous solution to continuously, uniformly and stably flow through SiO of the substrate2Different positions of the surface but without overflowing SiO2And the solvent water is continuously evaporated in the flowing process of the/Si substrate until the carbon nano tube solution is uniformly coated on the surface of the substrate.
(5) And continuously drying the substrate at 25-28 ℃, sequentially washing the surface of the substrate by deionized water and ethanol to remove the surfactant sodium dodecyl sulfate, and then drying by using nitrogen gas to obtain the carbon nano tube film.
Referring to FIG. 1, the carbon nanotube film was characterized by using a scanning electron microscope in 9 regions as shown in FIG. 1, and the results were shown inAs shown in fig. 3. Fig. 3a-i are scanning electron microscope pictures of corresponding regions in fig. 1, respectively. As is clear from FIG. 3, SiO2The carbon nanotube film coated on the surface of the Si substrate is uniformly distributed.
Example 3
Preparing a carbon nanotube film by the following method:
(1) and taking a 1cm multiplied by 1cm Si substrate, sequentially and respectively ultrasonically cleaning the substrate for 20 minutes by using deionized water, acetone and ethanol, then flushing the substrate by using the deionized water, and drying the substrate by using nitrogen to obtain the cleaned Si substrate.
(2) And separating and removing the metal single-walled carbon nanotubes in the single-walled carbon nanotube aqueous solution by adopting gel chromatography to obtain the aqueous solution of the semiconductor single-walled carbon nanotubes with the purity of more than 99 percent, which is dispersed by 0.25 percent of sodium deoxycholate and 0.5 percent of sodium dodecyl sulfate by mass fraction, wherein the concentration of the carbon nanotubes in the aqueous solution is 80 mug/mL.
(3) And (3) sucking 25 mu L of the semiconductor single-walled carbon nanotube solution obtained in the step (2) by using a micro liquid-transfering gun, and dripping the semiconductor single-walled carbon nanotube solution on the Si substrate cleaned in the step (1).
(4) After the semiconductor single-walled carbon nanotube aqueous solution is dripped, the Si substrate is manually, stably, continuously and moderately inclined at the temperature of 23-25 ℃, so that the carbon nanotube aqueous solution continuously, uniformly and stably flows through different positions on the surface of the substrate without overflowing the Si substrate, and the solvent water is continuously evaporated in the flowing process until the carbon nanotube solution is more uniformly coated on the surface of the substrate.
(5) And continuously drying the substrate at 23-25 ℃, sequentially washing the surface of the substrate by using deionized water, ethanol and acetone to remove surfactants sodium deoxycholate and sodium dodecyl sulfate, and blow-drying by using nitrogen gas to obtain the carbon nano tube film.
Referring to fig. 1, the carbon nanotube film was characterized in 9 regions shown in fig. 1 by using a scanning electron microscope, and the result is shown in fig. 4. Fig. 4a-i are scanning electron microscope pictures of corresponding regions in fig. 1, respectively. As is clear from FIG. 4, SiO2The carbon nanotube film coated on the surface of the Si substrate is uniformly distributed.
Example 4
Preparing a carbon nanotube film by the following method:
(1) taking a 1cm × 1cm piece of SiO2a/Si substrate of which SiO2Is 500nm, is sequentially and respectively ultrasonically cleaned for 20 minutes by deionized water, acetone and ethanol, then is rinsed by the deionized water and is dried by nitrogen gas, and the cleaned SiO is obtained2a/Si substrate.
(2) And separating and removing the metal single-walled carbon nanotubes in the single-walled carbon nanotube aqueous solution by adopting gel chromatography to obtain the aqueous solution of the semiconductor single-walled carbon nanotubes with the purity of more than 99 percent, which is dispersed by 0.25 percent of sodium deoxycholate and 0.5 percent of sodium dodecyl sulfate by mass fraction, wherein the concentration of the carbon nanotubes in the aqueous solution is 40 mug/mL.
(3) Using a micro liquid transfer gun to suck 20 mu L of the semiconductor single-walled carbon nanotube aqueous solution obtained in the step (2), and dripping the semiconductor single-walled carbon nanotube aqueous solution on the SiO cleaned in the step (1)2SiO of/Si substrate2On the surface.
(4) After the aqueous solution of the semiconductor single-walled carbon nanotube is dripped, SiO is artificially, stably, continuously and moderately inclined at the temperature of 23-25 DEG C2The silicon/silicon substrate enables the carbon nano tube aqueous solution to continuously, uniformly and stably flow through SiO of the substrate2Different positions of the surface but without overflowing SiO2And the solvent water is continuously evaporated in the flowing process of the/Si substrate until the carbon nano tube solution is uniformly coated on the surface of the substrate.
(5) And continuously drying the substrate at 23-25 ℃, sequentially washing the surface of the substrate by using ionized water, ethanol and acetone to remove surfactants sodium deoxycholate and sodium dodecyl sulfate, and blow-drying by using nitrogen gas to obtain the carbon nano tube film.
Referring to fig. 1, the carbon nanotube film was characterized in 9 regions shown in fig. 1 by using a scanning electron microscope, and the result is shown in fig. 5. Fig. 5a-i are scanning electron microscope pictures of the corresponding regions of fig. 1, respectively. As is clear from FIG. 5, SiO2The carbon nanotube film coated on the surface of the Si substrate is uniformly distributed, but the density of the carbon tubes is obviously reduced compared with example 4Low.
Example 5
Preparing a carbon nanotube film by the following method:
(1) taking a 1cm × 1cm piece of SiO2a/Si substrate of which SiO2Is 500nm, is sequentially and respectively ultrasonically cleaned for 20 minutes by deionized water, acetone and ethanol, then is rinsed by the deionized water and is dried by nitrogen gas, and the cleaned SiO is obtained2a/Si substrate.
(2) And separating and removing the metal single-walled carbon nanotubes in the single-walled carbon nanotube aqueous solution by adopting gel chromatography to obtain the aqueous solution of the semiconductor single-walled carbon nanotubes with the purity of more than 99 percent, which is dispersed by 0.25 percent of sodium deoxycholate and 0.5 percent of sodium dodecyl sulfate by mass fraction, wherein the concentration of the carbon nanotubes in the aqueous solution is 20 mug/mL.
(3) Using a micro liquid transfer gun to suck 20 mu L of the semiconductor single-walled carbon nanotube aqueous solution obtained in the step (2), and dripping the semiconductor single-walled carbon nanotube aqueous solution on the SiO cleaned in the step (1)2SiO of/Si substrate2On the surface.
(4) After the aqueous solution of the semiconductor single-walled carbon nanotube is dripped, SiO is artificially, stably, continuously and moderately inclined at the temperature of 23-25 DEG C2The silicon/silicon substrate enables the carbon nano tube aqueous solution to continuously, uniformly and stably flow through SiO of the substrate2Different positions of the surface but without overflowing SiO2And the solvent water is continuously evaporated in the flowing process of the/Si substrate until the carbon nano tube solution is uniformly coated on the surface of the substrate.
(5) And continuously drying the substrate at 23-25 ℃, sequentially washing the surface of the substrate by using ionized water, ethanol and acetone to remove surfactants sodium deoxycholate and sodium dodecyl sulfate, and blow-drying by using nitrogen gas to obtain the carbon nano tube film.
Referring to fig. 1, the carbon nanotube film was characterized in 9 regions shown in fig. 1 by using a scanning electron microscope, and the result is shown in fig. 6. Fig. 6a-i are scanning electron microscope pictures of corresponding regions in fig. 1, respectively. As is clear from FIG. 6, SiO2The carbon nanotube film coated on the surface of the Si substrate is uniform, but the density of the carbon nanotubes is too low。
Comparative example 1
A carbon nanotube film was prepared in substantially the same manner as in example 1, except that: and (2) preparing an aqueous solution of the semiconductor single-walled carbon nanotubes with the purity of more than 99 percent, which is dispersed by 1.0 percent of sodium deoxycholate by mass fraction, wherein the concentration of the carbon nanotubes in the aqueous solution is 1000 mug/mL. Experiments show that the concentration of the carbon nanotube aqueous solution is too high, the solution is difficult to flow, so that the whole substrate cannot be coated, and a uniform carbon nanotube film cannot be formed.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (28)
1. A method for preparing a carbon nanotube film, the method comprising the steps of:
(1) dripping the carbon nanotube solution with the concentration of less than 1mg/mL and dispersed by the surfactant on a substrate;
(2) continuously and uniformly flowing the carbon nanotube solution through the surface of the substrate by inclining the substrate without overflowing the surface of the substrate until the carbon nanotube solution is coated on the surface of the substrate; and
(3) and drying the substrate, washing the surface of the substrate to basically remove the surfactant coated on the surface of the carbon nano tube, and drying by blowing to obtain the carbon nano tube film.
2. The method according to claim 1, wherein the concentration of the carbon nanotube solution is 20 to 100 μ g/mL.
3. The method according to claim 2, wherein the concentration of the carbon nanotube solution is 40 to 100 μ g/mL.
4. The production method according to claim 3, wherein the concentration of the carbon nanotube solution is 60 to 80 μ g/mL.
5. The production method according to claim 1, wherein the carbon nanotube solution is an aqueous carbon nanotube solution.
6. The production method according to any one of claims 1 to 5, wherein the surfactant is selected from one or more of an anionic surfactant, a cationic surfactant, an amphoteric surfactant, and a nonionic surfactant.
7. The method of claim 6, wherein the anionic surfactant is selected from one or more of sodium dodecyl sulfate, sodium dodecyl benzene sulfonate, sodium deoxycholate, and sodium cholate.
8. The method according to claim 6, wherein the cationic surfactant is one or more selected from cetyltrimethylammonium bromide, cetyl-4-vinylpyridine bromide, ethyl-4-vinylpyridine, 4-vinylpyridine.
9. The production method according to claim 6, wherein the amphoteric surfactant is selected from one or more of sodium dodecylaminopropionate, dodecyldimethyl betaine, dodecylethoxysulfobetaine, dodecylhydroxypropylsulfobetaine, dodecylsulfopropylbetaine, tetradecylamidopropylhydroxypropylsulfobetaine, decylhydroxypropylsulfobetaine, and octadecyldihydroxyethyl amine oxide.
10. The method according to claim 6, wherein the nonionic surfactant is triton X-305.
11. The production method according to any one of claims 1 to 5, wherein the surfactant is used in an amount of 0.1 to 5 wt% in the carbon nanotube solution.
12. The method of claim 11, wherein the surfactant is used in an amount of 0.1 to 1 wt% in the carbon nanotube solution.
13. The method of any one of claims 1 to 5, wherein the carbon nanotube solution is selected from a multi-walled carbon nanotube solution and a single-walled carbon nanotube solution.
14. The production method according to any one of claims 1 to 5, wherein the carbon nanotube solution is a metallic-type single-walled carbon nanotube solution, a semiconductor-type single-walled carbon nanotube solution, or a single chiral carbon nanotube solution.
15. The production method according to any one of claims 1 to 5, wherein the substrate in step (1) is a rigid substrate or a flexible substrate.
16. The production method according to claim 15, wherein the rigid substrate is a Si substrate, SiO substrate2a/Si substrate, a quartz substrate or a glass substrate.
17. The production method according to claim 15, wherein the flexible substrate is a polyethylene terephthalate substrate, a polyethylene naphthalate substrate, or a polydimethylsiloxane substrate.
18. The production method according to any one of claims 1 to 5, wherein the amount of the carbon nanotube solution used in step (1) is 5 to 20 μ L/cm2。
19. The production method according to claim 18, wherein the amount of the carbon nanotube solution used in the step (1) is 12 to 17 μ L/cm2。
20. The production method according to any one of claims 1 to 5, wherein step (2) is carried out at 20-40 ℃.
21. The method according to claim 20, wherein the step (2) is carried out at 23 to 28 ℃.
22. The production method according to any one of claims 1 to 5, wherein the substrate is dried at 20 to 100 ℃ in step (3).
23. The method of claim 22, wherein the substrate is dried at 23-30 ℃ in step (3).
24. The production method according to any one of claims 1 to 5, wherein the reagent used for rinsing the surface of the substrate in the step (3) is selected from one or more of deionized water and an organic solvent.
25. The method of claim 24, wherein the organic solvent is selected from the group consisting of ethanol, isopropanol, and acetone.
26. The method according to any one of claims 1 to 5, wherein the surface of the substrate is cleaned by rinsing the surface of the substrate with one or more of deionized water, ethanol and acetone in step (3).
27. The production method according to any one of claims 1 to 5, wherein the surface of the substrate is blow-dried with an inert gas in step (3).
28. The production method according to any one of claims 1 to 5, wherein the surface of the substrate is blow-dried with nitrogen gas in step (3).
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| CN110251110A (en) * | 2019-04-22 | 2019-09-20 | 太原理工大学 | Composite and flexible carbon nano-tube film, pliable pressure sensor and preparation method thereof |
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| CN111092154B (en) * | 2019-12-06 | 2023-11-24 | 中国科学院空间应用工程与技术中心 | Method for preparing large-area and uniform carbon nano tube network film |
| CN111056526B (en) * | 2019-12-30 | 2024-05-03 | 中国科学院空间应用工程与技术中心 | Method for preparing semiconductor carbon nano tube array film |
| CN112201754B (en) * | 2020-02-18 | 2022-08-19 | 天津大学 | Ultrathin crystalline continuous organic semiconductor film and preparation method and application thereof |
| CN111778779A (en) * | 2020-07-06 | 2020-10-16 | 上海安崎智能科技有限公司 | Whisker carbon nanotube far infrared paper and preparation method thereof |
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