CN108660510A - A kind of manufacture of novel fine-hair maring using monocrystalline silicon slice additive and simple etching method - Google Patents
A kind of manufacture of novel fine-hair maring using monocrystalline silicon slice additive and simple etching method Download PDFInfo
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- CN108660510A CN108660510A CN201810440920.3A CN201810440920A CN108660510A CN 108660510 A CN108660510 A CN 108660510A CN 201810440920 A CN201810440920 A CN 201810440920A CN 108660510 A CN108660510 A CN 108660510A
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- monocrystalline silicon
- wool
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- additive
- woolen
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 53
- 239000000654 additive Substances 0.000 title claims abstract description 51
- 230000000996 additive effect Effects 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 50
- 235000008216 herbs Nutrition 0.000 claims abstract description 46
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 31
- RWSXRVCMGQZWBV-WDSKDSINSA-N glutathione Chemical compound OC(=O)[C@@H](N)CCC(=O)N[C@@H](CS)C(=O)NCC(O)=O RWSXRVCMGQZWBV-WDSKDSINSA-N 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims abstract description 17
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 claims abstract description 14
- 108010024636 Glutathione Proteins 0.000 claims abstract description 13
- 229960003180 glutathione Drugs 0.000 claims abstract description 13
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- 239000004094 surface-active agent Substances 0.000 claims abstract description 10
- SHZGCJCMOBCMKK-UHFFFAOYSA-N D-mannomethylose Natural products CC1OC(O)C(O)C(O)C1O SHZGCJCMOBCMKK-UHFFFAOYSA-N 0.000 claims abstract description 9
- SHZGCJCMOBCMKK-JFNONXLTSA-N L-rhamnopyranose Chemical compound C[C@@H]1OC(O)[C@H](O)[C@H](O)[C@H]1O SHZGCJCMOBCMKK-JFNONXLTSA-N 0.000 claims abstract description 9
- PNNNRSAQSRJVSB-UHFFFAOYSA-N L-rhamnose Natural products CC(O)C(O)C(O)C(O)C=O PNNNRSAQSRJVSB-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001626 barium chloride Inorganic materials 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 11
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims description 6
- CBFCDTFDPHXCNY-UHFFFAOYSA-N octyldodecane Natural products CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 6
- 238000003912 environmental pollution Methods 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 150000008264 rhamnoses Chemical class 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical class CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 150000005206 1,2-dihydroxybenzenes Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000003842 bromide salts Chemical class 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 1
- 101100117236 Drosophila melanogaster speck gene Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229930195725 Mannitol Natural products 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 239000000594 mannitol Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of novel fine-hair maring using monocrystalline silicon slice additives, and it includes groups to be divided into：The deionized water of rhamnose, Gemini surface active agent, glutathione, catechol, ethylene glycol, barium chloride and surplus.The invention also discloses a kind of wool making solution for monocrystalline silicon pieces and a kind of simple etching method, Woolen-making liquid contains aqueous slkali and above-mentioned flocking additive, and carries out making herbs into wool to monocrystalline silicon sheet surface under the etching method.When making the matte of monocrystalline silicon piece using the above process, the making herbs into wool time shortens；Made matte pyramid is uniform, tiny, intensive, and reflectivity is low；Process for etching is simple, and etching device is cheap, and environmental pollution is small, has good practical value.
Description
Technical field
The present invention relates to a kind of manufacture of novel fine-hair maring using monocrystalline silicon slice additive and simple etching methods.
Background technology
Silicon wafer wool making is the technique of step key in manufacture of solar cells.Produce high-quality, excellent performance matte pair
The energy conversion efficiency and performance for improving solar cell are of great significance.Corrosion of the alkaline Wool-making agent to monocrystalline silicon sheet surface
With anisotropy, the matte with surface pyramid structure can be formed in making herbs into wool.The formation of matte can make silicon chip surface pair
Incident light carries out multiple reflections, improves solar energy in the absorption efficiency of silicon chip surface, increases short circuit current；Light can also be extended to exist
Light path in silicon chip increases the quantity of photo-generated carrier；Tortuous matte can increase p-n junction area, improve to photo-generated carrier
Collection rate；The extension of minority carrier life time can improve the long wave spectral response of solar cell.
Presently, there are alkaline flocking additive mainly have following a few classes：First, isopropanol or ethyl alcohol class flocking additive.
The flocking additive the disadvantage is that：Isopropanol and ethyl alcohol are all volatile to lead to that bath life is short, environmental pollution is serious, making herbs into wool cost
The problems such as high（Naval vessel chemical defence, 2013, (03):1-5）；Second, single-stranded surfactant-based flocking additive.The flocking additive
The disadvantage is that：First choice when the single-stranded surfactant of hydrophily is often making herbs into wool, but its organic substance residues to monocrystalline silicon sheet surface
It can not remove, need to add pretreatment process and cumbersome cleaning process etc.（Artificial lens journal, 2012, (S1);354-
358）；In addition, also some other flocking additives（Shandong chemical industry, 2017,46 (15);45-46）, or after making herbs into wool being led to
Silicon chip there is the defects of speck, Little Raindrops.These disadvantages finally all can cause the transformation efficiency of solar cell low.
Therefore, it in order to improve conventional process for etching, needs to study new flocking additive to improve making herbs into wool effect, to carry
High solar cell conversion efficiency, and reduce the pollution to environment and ensure the sustainable development of resource.
Invention content
The present invention provides a kind of novel fine-hair maring using monocrystalline silicon slice additive, which is characterized in that the flocking additive by rhamnose,
Gemini surface active agent, glutathione, catechol, ethylene glycol, barium chloride and deionized water composition.Each group in flocking additive
The mass percent divided（wt%）For：Rhamnose 1%~10%, Gemini surface active agent 0.5%~5%, glutathione 3%~10%, neighbour
Benzenediol 2%~15%, ethylene glycol 0.1%~3%, barium chloride 0.3%~5%, surplus are deionized water.
The present invention also provides a kind of wool making solution for monocrystalline silicon pieces, which is characterized in that it includes above-mentioned flocking additive and alkali
The volume ratio of solution, the fine-hair maring using monocrystalline silicon slice additive and aqueous slkali is 0.5~3:100.Contained aqueous slkali be 0.1~
The sodium hydrate aqueous solution of 5wt%.
In addition, the present invention also provides a kind of simple fine-hair maring using monocrystalline silicon slice methods, which is characterized in that use above-mentioned system
Suede liquid carries out making herbs into wool to monocrystalline silicon sheet surface, and making herbs into wool temperature is 75~85 DEG C, and the making herbs into wool time is 300~900 s.
Above-mentioned its specific steps of fine-hair maring using monocrystalline silicon slice method include：
(1) flocking additive is prepared：By rhamnose 1%~10%, Gemini surface active agent 0.5%~5%, glutathione 3%~
10%, Catechol 2 %~15%, ethylene glycol 0.1%~3%, barium chloride 0.3%~5% are added in the water of surplus, are uniformly mixed and are matched
Flocking additive is made.
(2) Woolen-making liquid is prepared：(1) described flocking additive is added in aqueous slkali, is uniformly mixed and is configured to making herbs into wool
Liquid；The volume ratio of the flocking additive and aqueous slkali is 0.5~3:100；The aqueous slkali is the hydrogen-oxygen of 0.1~5wt%
Change sodium water solution.
(3) monocrystalline silicon piece is immersed in the making herbs into wool that silicon chip surface is carried out in the Woolen-making liquid described in (2), making herbs into wool temperature is 75
~85 DEG C, the making herbs into wool time is 300~900 s.
Using above-mentioned wool making solution for monocrystalline silicon pieces and etching method to fine-hair maring using monocrystalline silicon slice after, silicon chip whole surface color and luster is equal
Even, the pyramid of formation is in positive tetrahedron type, and the length of side is about 2~5 microns, and intensive, tiny and uniform fold is in silicon chip whole face.
Advantages of the present invention：
1. this patent uses catechol reagent, its oxide under the action of sodium hydroxide, ethylene glycol and barium chloride with silicon
Complex compound is formed, starting point when while alloing the oxide of silicon to be rapidly separated silicon chip surface as making herbs into wool promotes fine and closely woven uniform
Pyramid structure formed；Rhamnose contains cyclic structure and ehter bond compared with sorbierite, mannitol etc., this makes it in the solution
With higher activity, have the effect of more preferably slowing down sodium hydroxide corrosion rate, and then make pyramid evenly；Gluathione
Contain-SH in peptide structure, have and remove free radical effect, inoxidizability is mutually cooperateed with the reproducibility of rhamnose, ensure that system
The stability of suede additive；Gemini surface active agent lipophilic group, two hydrophilic radicals containing there are two, compared with single-stranded surface-active
Agent has the stronger performance for reducing water surface tension and cleaning silicon wafer surface and oil contaminant.Factors above makes making herbs into wool reaction evenly,
The quality for improving matte, has saved production cost.
2. make monocrystalline silicon piece texture using flocking additive of the present invention, the addition of isopropanol or ethyl alcohol is not needed, no
Need it is regular add, greatly reduce environmental pollution and liquid waste processing difficulty caused by additive volatilization, and silicon chip surface shape
At uniform, tiny, intensive pyramid.Therefore, the cost that making herbs into wool can be reduced using the present invention, is reduced environmental pollution, is had
Conducive to the transformation efficiency of raising solar cell.
3. Woolen-making liquid provided by the invention and etching method can shorten the making herbs into wool time, the making herbs into wool time is 300~900 s,
Improve production efficiency.Produced silicon chip surface pyramid is in positive tetrahedron type, and the length of side is about 2~5 microns, and pyramid covers
Lid rate is high, and reflectivity is relatively low.
4. Woolen-making liquid provided by the invention and etching method, required etching device is cheap, and making herbs into wool process is simply easy
Operation need to only be stirred evenly with glass bar when preparing Woolen-making liquid, need not be bubbled and follow in texturing slot during making herbs into wool
Ring pumps, and has saved the energy.
Description of the drawings
Fig. 1 is the reflectance curve of 1 gained monocrystalline silicon suede of embodiment.
Fig. 2 is the pyramid SEM figures of 1 gained monocrystalline silicon suede of embodiment.
Fig. 3 is the reflectance curve of 2 gained monocrystalline silicon suede of embodiment.
Fig. 4 is the pyramid SEM figures of 2 gained monocrystalline silicon suede of embodiment.
Fig. 5 is the reflectance curve of 3 gained monocrystalline silicon suede of embodiment.
Fig. 6 is the pyramid SEM figures of 3 gained monocrystalline silicon suede of embodiment.
Fig. 7 is the reflectance curve of 4 gained monocrystalline silicon suede of embodiment.
Fig. 8 is the pyramid SEM figures of 4 gained monocrystalline silicon suede of embodiment.
Fig. 9 is the reflectance curve of 5 gained monocrystalline silicon suede of embodiment.
Figure 10 is the pyramid SEM figures of 5 gained monocrystalline silicon suede of embodiment.
Figure 11 is the reflectance curve of 6 gained monocrystalline silicon suede of embodiment.
Figure 12 is the pyramid SEM figures of 6 gained monocrystalline silicon suede of embodiment.
Specific implementation mode
The invention will be further described with specific implementation below in conjunction with the accompanying drawings, but the present invention is not limited by following embodiment
It is fixed.
Embodiment 1：
(1) flocking additive is prepared：By 2 g rhamnoses, 0.5 g didecyl Dimethy ammonium bromide, 3 g glutathione, 2 g
Catechol, 1 g barium chlorides, is added in the water of surplus 0.1 g ethylene glycol（95 ml）, it is uniformly mixed and is configured to 100 g systems
Suede additive.
(2) Woolen-making liquid is prepared：200 g sodium hydroxides are dissolved in deionized water, 40 kg aqueous slkalis are obtained；By step
(1) made 100 g flocking additives-are added to aqueous slkali and obtain Woolen-making liquid after mixing.
(3) monocrystalline silicon piece is immersed in the making herbs into wool that silicon chip surface is carried out in the Woolen-making liquid described in (2), making herbs into wool temperature is 75
DEG C, the making herbs into wool time is 900 s.
Embodiment 2：
A kind of fine-hair maring using monocrystalline silicon slice method, is as follows：
(1) flocking additive is prepared：By 3 g rhamnoses, 1.5 g didecyl Dimethy ammonium bromides, 5 g glutathione, 2.2
G catechols, 0.5 g ethylene glycol, 2 g barium chlorides are added in the water of surplus（95 ml）, it is uniformly mixed and is configured to 100 g systems
Suede additive.
(2) Woolen-making liquid is prepared：80 g sodium hydroxides are dissolved in deionized water, 10 kg aqueous slkalis are obtained；By step (1)
100 made g flocking additives, which are added to aqueous slkali and are uniformly mixed, obtains Woolen-making liquid.
(3) monocrystalline silicon piece is immersed in the making herbs into wool that silicon chip surface is carried out in the Woolen-making liquid described in (2), making herbs into wool temperature is 80
DEG C, the making herbs into wool time is 600 s.
Embodiment 3：
A kind of fine-hair maring using monocrystalline silicon slice method, is as follows：
(1) flocking additive is prepared：5 g rhamnoses, 1 g didecyl Dimethy ammonium bromide, 4 g glutathione, 5 g are adjacent
Benzenediol, 0.3 g ethylene glycol, 0.5 g barium chlorides are added in the water of surplus（95 ml）, it is uniformly mixed and is configured to 100 g making herbs into wool
Additive.
(2) Woolen-making liquid is prepared：100 g sodium hydroxides are dissolved in deionized water, 5 kg aqueous slkalis are obtained；By step (1)
100 made g flocking additives, which are added to aqueous slkali and are uniformly mixed, obtains Woolen-making liquid.
(3) monocrystalline silicon piece is immersed in the making herbs into wool that silicon chip surface is carried out in the Woolen-making liquid described in (2), making herbs into wool temperature is 82
DEG C, the making herbs into wool time is 800 s.
Embodiment 4：
A kind of fine-hair maring using monocrystalline silicon slice method, is as follows：
(1) flocking additive is prepared：By 6 g rhamnoses, 0.8 g didodecyldimethylammbromide bromides, 3.5 g glutathione,
6.3 g catechols, 0.15 g ethylene glycol, 1 g barium chlorides are added in the water of surplus（95 ml）, it is uniformly mixed and is configured to 100
G flocking additives.
(2) Woolen-making liquid is prepared：70 g sodium hydroxides are dissolved in deionized water, 10 kg aqueous slkalis are obtained；By step (1)
100 made g flocking additives, which are added to aqueous slkali and are uniformly mixed, obtains Woolen-making liquid.
(3) monocrystalline silicon piece is immersed in the making herbs into wool that silicon chip surface is carried out in the Woolen-making liquid described in (2), making herbs into wool temperature is 77
DEG C, the making herbs into wool time is 800 s.
Embodiment 5：
A kind of fine-hair maring using monocrystalline silicon slice method, is as follows：
(1) flocking additive is prepared：By 1.5 g rhamnoses, 1 g didodecyldimethylammbromide bromides, 5.5 g glutathione,
3.5 g catechols, 0.35 g ethylene glycol, 5 g barium chlorides are added in the water of surplus（95 ml）, it is uniformly mixed and is configured to 100
G flocking additives.
(2) Woolen-making liquid is prepared：90 g sodium hydroxides are dissolved in deionized water, 10 kg aqueous slkalis are obtained；By step (1)
100 made g flocking additives, which are added to aqueous slkali and are uniformly mixed, obtains Woolen-making liquid.
(3) monocrystalline silicon piece is immersed in the making herbs into wool that silicon chip surface is carried out in the Woolen-making liquid described in (2), making herbs into wool temperature is 80
DEG C, the making herbs into wool time is 900 s.
Embodiment 6：
A kind of fine-hair maring using monocrystalline silicon slice method, is as follows：
(1) flocking additive is prepared：By 2.5 g rhamnoses, 0.4 g didecyl Dimethy ammonium bromide, the bis- dodecanes of 0.6 g
Base ditallowdimethyl ammonium bromide, 4.5 g glutathione, 3 g catechols, 0.2 g ethylene glycol, 4.5 g barium chlorides are added to surplus
In water（95 ml）, it is uniformly mixed and is configured to 100 g flocking additives.
(2) Woolen-making liquid is prepared：100 g sodium hydroxides are dissolved in deionized water, 50 kg aqueous slkalis are obtained；By step
(1) 100 made g flocking additives are added to aqueous slkali and are uniformly mixed to obtain Woolen-making liquid.
(3) monocrystalline silicon piece is immersed in the making herbs into wool that silicon chip surface is carried out in the Woolen-making liquid described in (2), making herbs into wool temperature is 80
DEG C, the making herbs into wool time is 700 s.
The specific implementation method described above for fully having illustrated the present invention, it should be noted that led for this technology
For the technical staff in domain, in the case where not departing from claims of the present invention range, some modifications and profit can also be made
Color, these modifications and polishing also belong to the scope of the present invention.
Claims (8)
1. a kind of novel fine-hair maring using monocrystalline silicon slice additive, which is characterized in that wherein included group is divided into rhamnose, the work of Shuangzi surface
Property agent, glutathione, catechol, ethylene glycol, barium chloride and deionized water.
2. novel fine-hair maring using monocrystalline silicon slice additive according to claim 1, which is characterized in that the fine-hair maring using monocrystalline silicon slice
The mass percent of each component is in additive：Rhamnose 1%~10%, Gemini surface active agent 0.5%~5%, glutathione 3%
~10%, Catechol 2 %~15%, ethylene glycol 0.1%~3%, barium chloride 0.3%~5%, surplus are water.
3. the novel fine-hair maring using monocrystalline silicon slice additive according to the 1 of claim, which is characterized in that live on the Shuangzi surface
Property agent is one or both of didecyl Dimethy ammonium bromide, didodecyldimethylammbromide bromide.
4. the Woolen-making liquid for fine-hair maring using monocrystalline silicon slice, which is characterized in that it contains appointing described in aqueous slkali and claim 1-3
The volume ratio of one flocking additive of meaning, the fine-hair maring using monocrystalline silicon slice additive and aqueous slkali is 0.5~3:100.
5. Woolen-making liquid according to claim 4, which is characterized in that contained aqueous slkali is that mass percent is 0.1~5
Sodium hydrate aqueous solution.
6. the simple etching method of monocrystalline silicon piece, which is characterized in that using claim 4 Woolen-making liquid to monocrystalline silicon sheet surface into
Row making herbs into wool.
7. the simple etching method of monocrystalline silicon piece according to claim 6, which is characterized in that the making herbs into wool of the etching method
Temperature is 75~85 DEG C, and the making herbs into wool time is 300~900 s.
8. fine-hair maring using monocrystalline silicon slice method according to claim 6, which is characterized in that its specific steps includes：
(1) flocking additive is prepared：Rhamnose 1%~10%, Gemini surface active agent 0.5%~5%, glutathione 3%~10 are adjacent
Benzenediol 2%~15%, ethylene glycol 0.1%~3%, barium chloride 0.3%~5% are added in the deionized water of surplus, are uniformly mixed and are matched
Flocking additive is made；
(2) Woolen-making liquid is prepared：(1) described flocking additive is added in aqueous slkali, is uniformly mixed and is configured to Wool-making agent；Institute
The volume ratio of the flocking additive and aqueous slkali stated is 0.5~3:100；The aqueous slkali is that mass percent is 0.1~5
Sodium hydrate aqueous solution；
(3) monocrystalline silicon piece is immersed in the making herbs into wool that silicon chip surface is carried out in the Woolen-making liquid described in (2), making herbs into wool temperature is 75~85
DEG C, the making herbs into wool time is 300~900 s.
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| CN110644055A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polysaccharide and alcohols |
| CN110644053A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Formula and using method for preparing corn-shaped monocrystalline silicon suede composite texturing additive |
| CN114182356A (en) * | 2021-12-23 | 2022-03-15 | 江苏捷捷半导体新材料有限公司 | Low-reflectivity monocrystalline silicon wafer texturing additive, preparation method and application thereof |
| CN116144362A (en) * | 2023-03-13 | 2023-05-23 | 大连奥首科技有限公司 | Alcohol-free monocrystalline silicon rapid texturing additive, texturing solution containing alcohol-free monocrystalline silicon rapid texturing additive, preparation method and application of alcohol-free monocrystalline silicon rapid texturing additive |
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