CN108441957A - A kind of preparation method of bismuth ferrite photocatalysis film - Google Patents

A kind of preparation method of bismuth ferrite photocatalysis film Download PDF

Info

Publication number
CN108441957A
CN108441957A CN201711298836.4A CN201711298836A CN108441957A CN 108441957 A CN108441957 A CN 108441957A CN 201711298836 A CN201711298836 A CN 201711298836A CN 108441957 A CN108441957 A CN 108441957A
Authority
CN
China
Prior art keywords
bismuth ferrite
bismuth
obtains
sio
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711298836.4A
Other languages
Chinese (zh)
Inventor
买买提热夏提·买买提
阿比迪古丽·萨拉木
伊丽米然木·肉扎洪
甫尔开提·夏尔丁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xinjiang University
Original Assignee
Xinjiang University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xinjiang University filed Critical Xinjiang University
Priority to CN201711298836.4A priority Critical patent/CN108441957A/en
Publication of CN108441957A publication Critical patent/CN108441957A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64Flat crystals, e.g. plates, strips or discs
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02Heat treatment
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution

Abstract

The invention belongs to Material growth technical fields, and in particular to a kind of preparation method of bismuth ferrite photocatalysis film includes the following steps, step 1:It weighs nine water ferric nitrates and five water bismuth nitrates is spare;Step 2:The nine water ferric nitrates finished being weighed in step 1 and five water bismuth nitrates being uniformly mixed, ethylene glycol monomethyl ether then is added to the inside, obtains mixed liquor;Step 3:A certain amount of citric acid complexing agent is added in the mixed liquor obtained to step 2, suitable ethylene glycol monomethyl ether is then added and adjusts solution, then continues to stir at room temperature;Step 4:The solution that step 3 obtains is aged at room temperature, obtains bismuth ferrite precursor liquid;Step 5:Take a certain size SiO2/ Si substrates;Step 6:The bismuth ferrite precursor liquid that step 4 obtains is dropped in into SiO2In/Si substrate surfaces;Then it is prepared into film with sol evenning machine;Step 7:The film that step 6 obtains is preheated on hot plate, mahjong sample, which is placed in Muffle furnace, after preheating anneals, and bismuth ferrite photocatalysis film is obtained after annealing.

Description

A kind of preparation method of bismuth ferrite photocatalysis film
Technical field
The invention belongs to Material growth technical fields, and in particular to a kind of preparation method of bismuth ferrite photocatalysis film.
Background technology
As a kind of single-phase multi-ferroic material, bismuth ferrite material is more in high density, low-power consumption, non-volatile novel sensor State magnetoelectricity memory, the fields such as spintronics and photoelectric device are with important application prospects.
Physical deposition method and chemical deposition can be used respectively by preparing bismuth ferrite thin film;Physical deposition method is mainly Refer to magnetron sputtering method, pulsed laser deposition and molecular beam epitaxy etc.;Chemical deposition is primarily referred to as chemical vapor deposition Method, metal-organic decomposition method, sol-gel processing and hydro-thermal method etc.;Wherein, sol-gel processing is at present more Relatively simple method, advantage:(1) at low cost, it is easy to operate;(2) stoichiometric ratio is easily controllable, and it is easy to be doped; (3) energy large area does film.It is exactly first the compounds of needs in suitable solvent that sol-gel processing, which prepares bismuth ferrite thin film, Middle dissolving simultaneously adds a small amount of additive, and ageing forms uniform colloidal sol, then colloid is uniformly spin-coated on substrate with sol evenning machine, By hydrolysis, polymerisation forms gel, is then preheated and made annealing treatment to obtain the film of required thickness.
Invention content
The purpose of the present invention is be to control ferric nitrate and bismuth nitrate molal weight ratio and annealing temperature by sol-gal process Degree, annealing time, at room temperature in SiO2/ Si substrate surfaces are prepared into pure phase bismuth ferric photocatalysis film.
To realize the above-mentioned technical purpose, the technical solution adopted by the present invention is as follows:
A kind of preparation method of bismuth ferrite photocatalysis film, includes the following steps,
Step 1:Weigh nine water ferric nitrate [Fe (NO3)3·9H2O] and five water bismuth nitrate [Bi (NO3)3·5H2O] it is spare, Wherein the molal quantity ratio of ferric nitrate and bismuth nitrate is 1:(0.95~1.05);
Step 2:The nine water ferric nitrates finished will be weighed in the step 1 and five water bismuth nitrates are uniformly mixed, then to Ethylene glycol monomethyl ether is added in the inside, then stirs 30min~60min, until nine water ferric nitrates and five water bismuth nitrates are completely dissolved, obtains To mixed liquor;
Step 3:A certain amount of citric acid complexing agent is added in the mixed liquor obtained to the step 2, and continues to stir, Then suitable ethylene glycol monomethyl ether is added and adjusts solution, makes a concentration of 0.20-0.35mol/L of bismuth ferrite solution, then in room Continue to stir 3h~4h under temperature;
Step 4:The solution that the step 3 obtains is aged for 24 hours~72h at room temperature, obtains bismuth ferrite precursor liquid;
Step 5:Take a certain size SiO2/ Si substrates, then by SiO2/ Si substrates clean up, and are dried for standby;
Step 6:The bismuth ferrite precursor liquid that the step 4 obtains is dropped in into the SiO that the step 5 obtains2/ Si substrates On face;Then it is prepared into film with sol evenning machine;
Step 7:The film that the step 6 obtains is preheated into 3min~5min, mahjong after preheating on hot plate Sample is placed in Muffle furnace and anneals, and bismuth ferrite photocatalysis film is obtained after annealing.
As a preferred embodiment of the present invention, SiO is cleaned in the step 52When/Si substrates, first by SiO2/ Si substrates It is placed in the container equipped with acetone, then uses ultrasonic cleaning 10min, then SiO2/ Si substrates are rinsed well with deionized water 2min~5min, then dry up, absolute ethyl alcohol ultrasonic cleaning 10min, the SiO that will finally take out are used later2/ Si substrates are used again Deionized water ultrasonic cleaning 10min.
As a preferred embodiment of the present invention, in the step 6, the spin coating rate of sol evenning machine be 3000r/min~ 4000r/min。
As a preferred embodiment of the present invention, in the step 6, the time of sol evenning machine is 20s~30s.
As a preferred embodiment of the present invention, in the mixed liquor that the step 3 obtains, the concentration of citric acid complexing agent For 15g/L.
As a preferred embodiment of the present invention, in the step 7, the temperature of heating plate is 200 DEG C.
As a preferred embodiment of the present invention, in the step 7, preheating on hot plate repeats 10~20 times.
As a preferred embodiment of the present invention, annealing temperature is 500 DEG C~650 DEG C in the step 7.
Annealing time of annealing as a preferred embodiment of the present invention, in the step 7 is 2min~30min.
Beneficial effects of the present invention:
1, using five water bismuth nitrate [Bi (NO3)3·5H2O] and nine water ferric nitrate [Fe (NO3)3·9H2O] as initial former Material, ethylene glycol monomethyl ether prepare bismuth ferrite precursor liquid, in room temperature as complexing agent as solvent, citric acid by sol-gal process Lower acquisition bismuth ferrite precursor liquid breaches the bismuth ferrite precursor liquid that document is reported and needs to heat and could prepare, to reduce reality Test process;
2, in SiO2/ Si substrate surfaces control annealing temperature and annealing time is thin come the photocatalysis bismuth ferrite for preparing monocrystalline Film provides a kind of new method for later industrial production.
Description of the drawings
The present invention can be further illustrated by the nonlimiting examples that attached drawing provides;
Fig. 1 is the XRD diagram for the sample that annealing time of the embodiment of the present invention is 10min;
Fig. 2 is 500 DEG C of annealing temperature of the embodiment of the present invention, the sample SEM figures that annealing time is 10min;
Fig. 3 is that the photocatalysis effect for the sample that annealing time of the embodiment of the present invention is 10min changes over time tendency chart;
Specific implementation mode
In order to make those skilled in the art that the present invention may be better understood, with reference to the accompanying drawings and examples to this hair Bright technical solution further illustrates.
Embodiment one
Step 1:Weigh nine water ferric nitrate [Fe (NO3)3·9H2O] 3.31695g and five water bismuth nitrate [Bi (NO3)3· 5H2O] 2.626g is spare;
Step 2:The nine water ferric nitrates finished will be weighed in the step 1 and five water bismuth nitrates are uniformly mixed, then to 12mL ethylene glycol monomethyl ethers are added in the inside, then stir 30min~60min, until nine water ferric nitrates and five water bismuth nitrates are completely molten Solution, obtains mixed liquor;
Step 3:0.3g citric acid complexing agents are added in the mixed liquor obtained to the step 2, and continue to stir, then Suitable ethylene glycol monomethyl ether is added and adjusts solution, makes a concentration of 0.20-0.35mol/L of bismuth ferrite solution, then at room temperature Continue to stir 3h~4h;
Step 4:The solution that the step 3 obtains is aged for 24 hours~72h at room temperature, obtains bismuth ferrite precursor liquid;
Step 5:Take a certain size SiO2/ Si substrates, then by SiO2/ Si substrates clean up, and are dried for standby;
Step 6:The bismuth ferrite precursor liquid that the step 4 obtains is dropped in into the SiO that the step 5 obtains2/ Si substrates On face;Then it is prepared into film with sol evenning machine;
Step 7:The film that the step 6 obtains is preheated into 3min~5min, mahjong after preheating on hot plate Sample is placed in Muffle furnace and anneals, and annealing temperature selects 450 DEG C, and annealing time is 2~30min, and bismuth ferrite light is obtained after annealing and is urged Change film.
Embodiment two
Step 1:Weigh nine water ferric nitrate [Fe (NO3)3·9H2O] 3.31695g and five water bismuth nitrate [Bi (NO3)3· 5H2O] 2.626g is spare;
Step 2:The nine water ferric nitrates finished will be weighed in the step 1 and five water bismuth nitrates are uniformly mixed, then to 12mL ethylene glycol monomethyl ethers are added in the inside, then stir 30min~60min, until nine water ferric nitrates and five water bismuth nitrates are completely molten Solution, obtains mixed liquor;
Step 3:0.3g citric acid complexing agents are added in the mixed liquor obtained to the step 2, and continue to stir, then Suitable ethylene glycol monomethyl ether is added and adjusts solution, makes a concentration of 0.20-0.35mol/L of bismuth ferrite solution, then at room temperature Continue to stir 3h~4h;
Step 4:The solution that the step 3 obtains is aged for 24 hours~72h at room temperature, obtains bismuth ferrite precursor liquid;
Step 5:Take a certain size SiO2/ Si substrates, then by SiO2/ Si substrates clean up, and are dried for standby;
Step 6:The bismuth ferrite precursor liquid that the step 4 obtains is dropped in into the SiO that the step 5 obtains2/ Si substrates On face;Then it is prepared into film with sol evenning machine;
Step 7:The film that the step 6 obtains is preheated into 3min~5min, mahjong after preheating on hot plate Sample is placed in Muffle furnace and anneals, and annealing temperature selects 500 DEG C, and annealing time is 2~30min, and bismuth ferrite light is obtained after annealing and is urged Change film.
Embodiment three
Step 1:Weigh nine water ferric nitrate [Fe (NO3)3·9H2O] 3.31695g and five water bismuth nitrate [Bi (NO3)3· 5H2O] 2.626g is spare;
Step 2:The nine water ferric nitrates finished will be weighed in the step 1 and five water bismuth nitrates are uniformly mixed, then to 12mL ethylene glycol monomethyl ethers are added in the inside, then stir 30min~60min, until nine water ferric nitrates and five water bismuth nitrates are completely molten Solution, obtains mixed liquor;
Step 3:0.3g citric acid complexing agents are added in the mixed liquor obtained to the step 2, and continue to stir, then Suitable ethylene glycol monomethyl ether is added and adjusts solution, makes a concentration of 0.20-0.35mol/L of bismuth ferrite solution, then at room temperature Continue to stir 3h~4h;
Step 4:The solution that the step 3 obtains is aged for 24 hours~72h at room temperature, obtains bismuth ferrite precursor liquid;
Step 5:Take a certain size SiO2/ Si substrates, then by SiO2/ Si substrates clean up, and are dried for standby;
Step 6:The bismuth ferrite precursor liquid that the step 4 obtains is dropped in into the SiO that the step 5 obtains2/ Si substrates On face;Then it is prepared into film with sol evenning machine;
Step 7:The film that the step 6 obtains is preheated into 3min~5min, mahjong after preheating on hot plate Sample is placed in Muffle furnace and anneals, and annealing temperature selects 550 DEG C, and annealing time is 2~30min, and bismuth ferrite light is obtained after annealing and is urged Change film.
Embodiment 4
Step 1:Weigh nine water ferric nitrate [Fe (NO3)3·9H2O] 3.31695g and five water bismuth nitrate [Bi (NO3)3· 5H2O] 2.626g is spare;
Step 2:The nine water ferric nitrates finished will be weighed in the step 1 and five water bismuth nitrates are uniformly mixed, then to 12mL ethylene glycol monomethyl ethers are added in the inside, then stir 30min~60min, until nine water ferric nitrates and five water bismuth nitrates are completely molten Solution, obtains mixed liquor;
Step 3:0.3g citric acid complexing agents are added in the mixed liquor obtained to the step 2, and continue to stir, then Suitable ethylene glycol monomethyl ether is added and adjusts solution, makes a concentration of 0.20-0.35mol/L of bismuth ferrite solution, then at room temperature Continue to stir 3h~4h;
Step 4:The solution that the step 3 obtains is aged for 24 hours~72h at room temperature, obtains bismuth ferrite precursor liquid;
Step 5:Take a certain size SiO2/ Si substrates, then by SiO2/ Si substrates clean up, and are dried for standby;
Step 6:The bismuth ferrite precursor liquid that the step 4 obtains is dropped in into the SiO that the step 5 obtains2/ Si substrates On face;Then it is prepared into film with sol evenning machine;
Step 7:The film that the step 6 obtains is preheated into 3min~5min, mahjong after preheating on hot plate Sample is placed in Muffle furnace and anneals, and annealing temperature selects 600 DEG C, and annealing time is 2~30min, and bismuth ferrite light is obtained after annealing and is urged Change film.
Above-described embodiment is merely exemplary to illustrate the principle of the present invention and its effect, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention All equivalent modifications or change, should by the present invention claim be covered.

Claims (9)

1. a kind of preparation method of bismuth ferrite photocatalysis film, it is characterised in that:Include the following steps,
Step 1:Weigh nine water ferric nitrate [Fe (NO3)3·9H2O] and five water bismuth nitrate [Bi (NO3)3·5H2O] it is spare, wherein The molal quantity ratio of ferric nitrate and bismuth nitrate is 1:(0.95~1.05);
Step 2:The nine water ferric nitrates finished will be weighed in the step 1 and five water bismuth nitrates are uniformly mixed, then to the inside Ethylene glycol monomethyl ether is added, then stirs 30min~60min, until nine water ferric nitrates and five water bismuth nitrates are completely dissolved, is mixed Close liquid;
Step 3:A certain amount of citric acid complexing agent is added in the mixed liquor obtained to the step 2, and continues to stir, then Suitable ethylene glycol monomethyl ether is added and adjusts solution, makes a concentration of 0.20-0.35mol/L of bismuth ferrite solution, then at room temperature Continue to stir 3h~4h;
Step 4:The solution that the step 3 obtains is aged for 24 hours~72h at room temperature, obtains bismuth ferrite precursor liquid;
Step 5:Take a certain size SiO2/ Si substrates, then by SiO2/ Si substrates clean up, and are dried for standby;
Step 6:The bismuth ferrite precursor liquid that the step 4 obtains is dropped in into the SiO that the step 5 obtains2In/Si substrate surfaces; Then it is prepared into film with sol evenning machine;
Step 7:The film that the step 6 obtains is preheated into 3min~5min on hot plate, mahjong sample after preheating It is placed in Muffle furnace and anneals, bismuth ferrite photocatalysis film is obtained after annealing.
2. a kind of preparation method of bismuth ferrite photocatalysis film according to claim 1, it is characterised in that:The step 5 Middle cleaning SiO2When/Si substrates, first by SiO2/ Si substrates are placed in the container equipped with acetone, then use ultrasonic cleaning 10min, Again SiO2/ Si substrates rinse 2min~5min well with deionized water, then dry up, and use absolute ethyl alcohol ultrasonic cleaning later 10min, the SiO that will finally take out2/ Si substrates use deionized water ultrasonic cleaning 10min again.
3. a kind of preparation method of bismuth ferrite photocatalysis film according to claim 2, it is characterised in that:The step 6 In, the spin coating rate of sol evenning machine is 3000r/min~4000r/min.
4. a kind of preparation method of bismuth ferrite photocatalysis film according to claim 3, it is characterised in that:The step 6 In, the time of sol evenning machine is 20s~30s.
5. a kind of preparation method of bismuth ferrite photocatalysis film according to claim 4, it is characterised in that:The step 3 In obtained mixed liquor, a concentration of 15g/L of citric acid complexing agent.
6. a kind of preparation method of bismuth ferrite photocatalysis film according to claim 5, it is characterised in that:The step 7 In, the temperature of heating plate is 200 DEG C.
7. a kind of preparation method of bismuth ferrite photocatalysis film according to claim 6, it is characterised in that:The step In rapid seven, preheating on hot plate repeats 10~20 times.
8. a kind of preparation method of bismuth ferrite photocatalysis film according to claim 7, it is characterised in that:The step 7 Middle annealing temperature is 500 DEG C~650 DEG C.
9. a kind of preparation method of bismuth ferrite photocatalysis film according to claim 8, it is characterised in that:The step 7 Middle annealing annealing time is 2min~30min.
CN201711298836.4A 2017-12-08 2017-12-08 A kind of preparation method of bismuth ferrite photocatalysis film Pending CN108441957A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711298836.4A CN108441957A (en) 2017-12-08 2017-12-08 A kind of preparation method of bismuth ferrite photocatalysis film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711298836.4A CN108441957A (en) 2017-12-08 2017-12-08 A kind of preparation method of bismuth ferrite photocatalysis film

Publications (1)

Publication Number Publication Date
CN108441957A true CN108441957A (en) 2018-08-24

Family

ID=63190743

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711298836.4A Pending CN108441957A (en) 2017-12-08 2017-12-08 A kind of preparation method of bismuth ferrite photocatalysis film

Country Status (1)

Country Link
CN (1) CN108441957A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109702186A (en) * 2019-01-28 2019-05-03 合肥学院 A kind of bismuth metal nanometer shell material and preparation method thereof
CN111074244A (en) * 2018-10-19 2020-04-28 营口理工学院 Nickel-cerium co-doped bismuth ferrite film material and preparation method thereof
CN112226808A (en) * 2020-09-10 2021-01-15 清华大学 Bismuth ferrite nano single crystal array, preparation method thereof and electronic element containing bismuth ferrite nano single crystal array
CN114229911A (en) * 2021-12-31 2022-03-25 湖南大学 Preparation method of bismuth ferrite film
CN114808194A (en) * 2022-04-06 2022-07-29 山东大学 Preparation method and application of single-phase bismuth ferrite ceramic fiber
CN115432738A (en) * 2022-09-05 2022-12-06 南京理工大学 BiFeO for depositing amorphous layer 3 Film and method for producing same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102557473A (en) * 2011-12-19 2012-07-11 陕西科技大学 Method for preparing porous bismuth ferrate thin film by CSD (Chemical Solution Deposition) method
CN104925869A (en) * 2015-07-01 2015-09-23 西北工业大学 Preparation method of bismuth ferrite powder
CN106007403A (en) * 2016-05-20 2016-10-12 中国科学院新疆理化技术研究所 Preparation method of chlorine-doped bismuth ferrite photoelectric film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102557473A (en) * 2011-12-19 2012-07-11 陕西科技大学 Method for preparing porous bismuth ferrate thin film by CSD (Chemical Solution Deposition) method
CN104925869A (en) * 2015-07-01 2015-09-23 西北工业大学 Preparation method of bismuth ferrite powder
CN106007403A (en) * 2016-05-20 2016-10-12 中国科学院新疆理化技术研究所 Preparation method of chlorine-doped bismuth ferrite photoelectric film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
解焕英: "铁酸铋材料的制备与性能研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111074244A (en) * 2018-10-19 2020-04-28 营口理工学院 Nickel-cerium co-doped bismuth ferrite film material and preparation method thereof
CN109702186A (en) * 2019-01-28 2019-05-03 合肥学院 A kind of bismuth metal nanometer shell material and preparation method thereof
CN112226808A (en) * 2020-09-10 2021-01-15 清华大学 Bismuth ferrite nano single crystal array, preparation method thereof and electronic element containing bismuth ferrite nano single crystal array
CN112226808B (en) * 2020-09-10 2021-12-07 清华大学 Bismuth ferrite nano single crystal array, preparation method thereof and electronic element containing bismuth ferrite nano single crystal array
CN114229911A (en) * 2021-12-31 2022-03-25 湖南大学 Preparation method of bismuth ferrite film
CN114229911B (en) * 2021-12-31 2022-08-12 湖南大学 Preparation method of bismuth ferrite film
CN114808194A (en) * 2022-04-06 2022-07-29 山东大学 Preparation method and application of single-phase bismuth ferrite ceramic fiber
CN115432738A (en) * 2022-09-05 2022-12-06 南京理工大学 BiFeO for depositing amorphous layer 3 Film and method for producing same

Similar Documents

Publication Publication Date Title
CN108441957A (en) A kind of preparation method of bismuth ferrite photocatalysis film
CN105239060B (en) A kind of hot-spraying coating anti-reflection layer and preparation method thereof absorbed suitable for solar selectively
CN104193316B (en) Yttrium iron garnet film and preparation method thereof
CN106348616B (en) A kind of preparation method of SiO2/TiO2 antireflective coating
CN102603360B (en) Method for preparing bismuth ferric thin film material
CN102503162A (en) Preparation method for Ag-Al co-doped p type ZnO film
CN103691647B (en) A kind of preparation method with the solar energy Selective absorber film of spinel structure
CN103695874A (en) Preparation method of intelligent temperature control color changing vanadium oxide film
CN108946809A (en) The method that template method prepares witch culture porous silica vanadium powder body and film is sacrificed using cotton
CN104018137A (en) Method for preparing ZnS film by chemical bath reaction
CN102534587A (en) Method for preparing BiFeO3 film through sol-gel method
CN104692444B (en) A kind of method preparing ceria nano-crystalline film
CN109292820A (en) VO2/ ZnO bilayer film and preparation method thereof
CN103194741B (en) Alumina precursor solution, and preparation method and application thereof
CN103643224A (en) Microwave hydrothermal method for preparing CoTiO3 membrane
CN105645462B (en) Preparation method of CdS/ZnO core-shell-structure nanowires
CN101525161B (en) Method for preparing nickel oxide one dimension nano material
CN102795788A (en) Preparation method of SiO2 film and its application
CN103496736A (en) ZnS nano-crystalline film and preparation method and application thereof
CN102522211B (en) Method for preparing nanometer titanium dioxide slurry through cellulose acidification process
CN103553358B (en) A kind of Fe 3+/ SiO 2/ TiO 2the preparation method of nano compound film
CN101525158A (en) Method for preparing ferric oxide one dimension nano material
CN114907116A (en) Preparation method of strontium titanate film with adjustable heat conductivity coefficient
Wang et al. Preparation of nano zinc oxide composite porous membrane and its material regulation
CN105175010A (en) Method for preparing rutile titanium dioxide nano-film by virtue of sol-gel method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20180824

RJ01 Rejection of invention patent application after publication