CN108303660B - Push-pull type vertical sensitive magnetic sensor - Google Patents
Push-pull type vertical sensitive magnetic sensor Download PDFInfo
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- CN108303660B CN108303660B CN201810205346.3A CN201810205346A CN108303660B CN 108303660 B CN108303660 B CN 108303660B CN 201810205346 A CN201810205346 A CN 201810205346A CN 108303660 B CN108303660 B CN 108303660B
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- magnetic
- flux guide
- magnetic field
- magneto
- resistors
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- 230000004907 flux Effects 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000004883 computer application Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005358 geomagnetic field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
Abstract
The invention relates to a push-pull type vertical sensitive magnetic sensor. The invention includes a substrate, a flux guide, and four magneto resistors. The flux guide and the four magneto resistors are all arranged on the substrate. The flux guide is of a square annular structure; the four magneto resistors have the same specification and are respectively arranged on the inner sides of two opposite sides of the flux guide; four magneto-resistors form a wheatstone bridge structure. The invention can shield the magnetic field influence in the horizontal direction, detect the magnetic field in the vertical direction, can be integrated with the modern microelectronic technology, has simple structure and low cost, is easy to popularize, and overcomes the problems of instability, easy fracture and the like caused by the existing technology of vertically packaging the magnetic sensor by the Z axis.
Description
Technical Field
The invention belongs to the technical field of sensors, and relates to a push-pull type vertical sensitive magnetic sensor.
Background
A magnetic sensor is a device that can sense magnetic signals and convert them into electrical signals that can be output. Magnetic sensors are used as a task for detecting, collecting, storing, converting and monitoring various magnetic field information, and have become an indispensable basic element in the information technology and information industry. With the rapid development of information industry, industrial automation, transportation, power electronics technology, office automation, household appliances, medical instruments and the like and the popularization of computer applications, a large number of sensors are required to convert non-electric parameters to be measured and controlled into signals compatible with computers as input signals thereof, which provides opportunities for rapid development of magnetic sensors, thereby forming considerable magnetic sensor industry. Along with the wide popularization and application of the three-axis magnetic sensor in an electronic compass in unmanned aerial vehicles, intelligent watches and navigation equipment, the three-axis magnetic sensor bears a vital absolute pointing function, and the development of a stable and reliable Z-axis magnetic sensor becomes an urgent requirement. However, three-axis magnetic sensors commonly used in the market today generally adopt a structure of vertical Z-axis and horizontal XY-axis sensing. The sensor adopts multi-chip packaging, and a vertically placed Z-axis magnetic sensor and an X-axis/Y-axis magnetic sensor are fixedly packaged together through wire bonding or welding by Epoxy packaging materials and welding modes. However, the vertical Z-axis structure is complex to package, unstable, and is easily broken or loosened, and is greatly affected by temperature, so that the problem of subsequent use is caused. The invention of application number 201410238418.6 refers to a Z-axis magnetic sensor, the flux guide of which is disposed above the magneto resistor, and the main purpose of which is to detect magnetic field gradients, not to measure the magnitude of the magnetic field, and to limit the magnitude of the magnetic field.
Disclosure of Invention
The invention aims to provide a push-pull type vertical sensitive magnetic sensor.
The invention includes a substrate, a flux guide, and four magneto resistors. The flux guide and the four magneto resistors are all arranged on the substrate. The flux guide is of a square annular structure; the four magneto resistors have the same specification and are respectively arranged on the inner sides of two opposite sides of the flux guide; the sensitive axes of the four magneto resistors are arranged vertically to the mounting side; four magneto-resistors form a wheatstone bridge structure. The flux guide can generate magnetic leakage magnetic field components in the horizontal plane under the action of a Z-axis magnetic field in the vertical direction, and can shield and reduce the interference of the magnetic field components in the horizontal direction. The magnetic leakage generates magnetic field components in different directions at the positions of the left magnetic resistor pair and the right magnetic resistor pair, and the magnetic resistance values of the two magnetic resistors are changed in different magnitudes, so that the Wheatstone bridge forms push-pull output, and the strength of the measured magnetic field is obtained.
Preferably, the outer end of the flux guide is provided with a soft magnetic shielding layer;
preferably, the substrate is made of silicon oxide, silicon and magnesium oxide materials;
preferably, the flux guide and the soft magnetic shield layer are both made of soft magnetic materials.
Preferably, the magneto resistor is a giant magneto resistor or a tunnel junction magneto resistor.
The flux guide provided by the invention can generate a magnetic leakage magnetic field component in a horizontal plane under the action of a Z-axis magnetic field in a vertical direction, and can shield and reduce the interference of the magnetic field component in a horizontal direction. The magnetic leakage generates magnetic field components in different directions at the positions of the left magnetic resistor pair and the right magnetic resistor pair, and the magnetic resistance values of the two magnetic resistors are changed in different magnitudes, so that the Wheatstone bridge forms push-pull output, and finally the strength of the measured magnetic field is obtained. The magnetic sensor structure can shield the magnetic field influence in the horizontal direction, detect the magnetic field in the vertical direction, can be integrated with the modern microelectronic technology, has simple structure and low cost, is easy to popularize, and overcomes the problems of instability, easy fracture and the like caused by the existing technology of vertically packaging the magnetic sensor by the Z axis.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present invention;
FIG. 2 is a schematic diagram of the connection of the magneto-resistors to form a Wheatstone bridge;
FIG. 3 is a schematic diagram of the structure of the flux guide of the present invention focusing a magnetic field;
FIG. 4 is a schematic diagram of a leakage flux structure of a magnetic sensor flux guide of the present invention;
fig. 5 is a schematic structural diagram of the soft magnetic shielding layer of fig. 1.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment one:
as shown in fig. 1, a push-pull vertical sensitive magnetic sensor includes a substrate 1, a flux guide 2, and four magneto resistors 3. The flux guide 2 and four magneto resistors 4 are provided on a substrate. The flux guide is of a square annular structure; the four magneto resistors 3 have the same specification and are respectively arranged on the inner sides of the two opposite sides of the flux guide 2; the four magneto-resistors form a Wheatstone bridge structure; the substrate is made of materials such as silicon oxide, silicon, magnesium oxide and the like; the flux guide 2 is made of soft magnetic material such as nickel iron.
In the invention, the four magneto resistors have the same specification, and the sensitive axis direction is perpendicular to the installation side. The four magnetic resistors 3 are divided into two pairs, the first magnetic resistor R1 and the third magnetic resistor R3 on one side are one pair, the second magnetic resistor R2 and the fourth magnetic resistor R4 on the opposite side are the other pair, in order to make the magnetic resistors more sensitive, the two pairs of magnetic resistors are made to be as close to the edge of the flux guide 2 as possible in the manufacturing process, and in this embodiment, the two pairs of magnetic resistors are all designed to be closely attached to the inner edge of the hollow rectangular flux guide 2.
As shown in fig. 2, the four magneto resistors 3 form a wheatstone bridge structure, the first magneto resistor R1 and the third magneto resistor R3 are installed on one side, and the second magneto resistor R2 and the fourth magneto resistor R4 are installed on the opposite side; one end of the first magnetic resistor R1 is connected with one end of the second magnetic resistor R2 and then connected with a VCC input power supply; one end of the third magnetic resistor R3 is connected with one end of the fourth magnetic resistor R4 and then grounded; the other end of the first magnetic resistor R1 is connected with the other end of the fourth magnetic resistor R4 and then used as a negative output end; the other end of the second magneto resistor R2 is connected with the other end of the third resistor R3 and then serves as a positive output end.
When the magnetic resistors detect magnetic leakage, the resistance values of the two pairs of magnetic resistors are changed differently, so that the positive and negative output ends of the Wheatstone bridge of the push-pull structure generate differential output voltage Vout. The original magnetic field size can be indirectly obtained by detecting the output voltage.
The working process is as follows: the flux guide generates magnetic leakage components in a horizontal plane under the action of a Z-axis magnetic field in the vertical direction, and the directions of the magnetic leakage magnetic field components are different because the left and right pairs of magnetic resistors are different from the relative positions of the flux guide, so that the two pairs of magnetic resistors generate different magnetic resistance values to change under the action of the magnetic leakage magnetic field components, and the Wheatstone bridge generates push-pull output, so that the strength of a detected magnetic field is finally obtained.
As shown in fig. 3 and 4, when there is a magnetic field in the horizontal plane in the environment, the horizontal magnetic field is shielded by the flux guide 2; the four magneto resistors forming the Wheatstone bridge can generate the same signal change on the in-plane magnetic field, the balance of the bridge is not changed, and no output signal is output at the output end.
When a perpendicular magnetic field or a component of a perpendicular magnetic field is present in the detection environment, the flux guide will concentrate the perpendicular magnetic field and form a wheatstone bridge of magnetoresistors that sense leakage. In this embodiment, it is assumed that there is a uniform magnetic field H in a vertical direction, and the flux guide is affected by the magnetic field H in a vertical direction, so that positive magnetic charges are uniformly distributed on the upper surface of the flux guide, negative magnetic charges are uniformly distributed on the lower surface of the flux guide, and an induced magnetic field is formed between the positive magnetic charges and the negative magnetic charges. The magnetic sensors sense the magnetic leakage component formed by the flux guide in the plane, so that the same change is generated in the magnetic sensors at the same side, and different changes are generated in the magnetic sensors at different sides. One set of magnetoresistive values increases and the other set of magnetoresistive values decreases.
Embodiment two:
as shown in fig. 5, the basic structure of this embodiment is the same as that of the first embodiment. The difference is that the outer end of the flux guide 2 is also provided with a soft magnetic shielding layer 4, the soft magnetic shielding layer 4 and the flux guide 2 are arranged on the substrate, and four sides are parallel to the soft magnetic shielding layer 4. With the structure having the soft magnetic shield layer 1, the flux guide can shield part of the magnetic field when a horizontal magnetic field exists in the environment, and the soft magnetic shield layer 1 can further shield in-plane magnetic field interference. Even if the magnetic field in the horizontal direction is sensed by four magneto resistors, the same magneto resistor value change occurs to the four magneto resistors, and the bridge is kept balanced. The magnitude of the vertical magnetic field can be accurately measured, and the influence of the magnetic field in the horizontal direction (or the magnetic field gradient can be ignored such as geomagnetic field) is eliminated
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (6)
1. A push-pull vertical sensitive magnetic sensor comprises a substrate, a flux guide and four magneto resistors; the method is characterized in that: the flux guide and the four magneto resistors are arranged on the substrate; the flux guide is of a square annular structure; the four magneto resistors have the same specification and are respectively arranged on the inner sides of two opposite sides of the flux guide; the four magneto-resistors form a Wheatstone bridge structure; the flux guide can generate a magnetic leakage magnetic field component in a horizontal plane under the action of a Z-axis magnetic field in a vertical direction, and can shield and reduce the interference of the magnetic field component in the horizontal direction; because the relative positions of the two pairs of magnetic resistors and the flux guide are different, magnetic leakage generates magnetic field components in different directions at the positions of the left magnetic resistor pair and the right magnetic resistor pair, and the magnetic resistance values of the two pairs of magnetic resistors are changed in different magnitudes, so that a Wheatstone bridge forms push-pull output, and the strength of a detected magnetic field is obtained;
when a horizontal magnetic field exists in the environment, the horizontal magnetic field is shielded by the flux guide; the four magneto resistors forming the Wheatstone bridge can generate the same signal change on the in-plane magnetic field, the balance of the bridge is not changed, and no output signal is output at the output end;
when a perpendicular magnetic field or a component of a perpendicular magnetic field is present in the detection environment, the flux guide will concentrate the perpendicular magnetic field and form a wheatstone bridge of magnetoresistors that sense leakage.
2. A push-pull vertical sensitive magnetic sensor as recited in claim 1, wherein: the outer end of the flux guide is provided with a soft magnetic shielding layer.
3. A push-pull vertical sensitive magnetic sensor as recited in claim 1, wherein: the substrate is made of silicon oxide, silicon and magnesium oxide materials.
4. A push-pull vertical sensitive magnetic sensor as recited in claim 1, wherein: the flux guide is made of soft magnetic materials.
5. A push-pull vertical sensitive magnetic sensor as recited in claim 2, wherein: the soft magnetic shielding layer is made of soft magnetic materials.
6. A push-pull vertical sensitive magnetic sensor as recited in claim 1, wherein: the magneto resistor is a giant magneto resistor or a tunnel junction magneto resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810205346.3A CN108303660B (en) | 2018-03-13 | 2018-03-13 | Push-pull type vertical sensitive magnetic sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810205346.3A CN108303660B (en) | 2018-03-13 | 2018-03-13 | Push-pull type vertical sensitive magnetic sensor |
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| CN108303660A CN108303660A (en) | 2018-07-20 |
| CN108303660B true CN108303660B (en) | 2023-11-24 |
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| CN201810205346.3A Active CN108303660B (en) | 2018-03-13 | 2018-03-13 | Push-pull type vertical sensitive magnetic sensor |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109946499A (en) * | 2019-03-13 | 2019-06-28 | 无锡乐尔科技有限公司 | Current detection means based on PCB |
| CN110345938B (en) * | 2019-06-25 | 2021-08-31 | 潍坊歌尔微电子有限公司 | Wafer-level magnetic sensor and electronic equipment |
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| DE102010050356A1 (en) * | 2010-05-20 | 2011-11-24 | Walter Mehnert | magnetic field sensor |
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| CN108717169A (en) * | 2018-06-22 | 2018-10-30 | 钱正洪 | A kind of two-dimensional magnetic field sensor |
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| CN103033771A (en) * | 2011-09-29 | 2013-04-10 | 宇能电科技股份有限公司 | Magnetoresistive sensing element and magnetoresistive sensor |
| US9279865B2 (en) * | 2012-05-09 | 2016-03-08 | Everspin Technologies, Inc. | Method and structure for testing and calibrating three axis magnetic field sensing devices |
| US9720051B2 (en) * | 2014-05-29 | 2017-08-01 | Nxp Usa, Inc. | Sensor package including a magnetic field sensor and a continuous coil structure for enabling z-axis self-test capability |
| US10809320B2 (en) * | 2015-04-29 | 2020-10-20 | Everspin Technologies, Inc. | Magnetic field sensor with increased SNR |
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- 2018-03-13 CN CN201810205346.3A patent/CN108303660B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010050356A1 (en) * | 2010-05-20 | 2011-11-24 | Walter Mehnert | magnetic field sensor |
| CN105408756A (en) * | 2013-07-22 | 2016-03-16 | 森斯泰克有限公司 | Multicomponent magnetic field sensor |
| CN203480009U (en) * | 2013-09-10 | 2014-03-12 | 江苏多维科技有限公司 | Single-chip Z-axis linear magneto-resistor sensor |
| CN103995240A (en) * | 2014-05-30 | 2014-08-20 | 江苏多维科技有限公司 | Magnetic resistance Z-axis gradient sensor chip |
| DE102014116953A1 (en) * | 2014-11-19 | 2016-05-19 | Sensitec Gmbh | Method and apparatus for producing a magnetic field sensor device and related magnetic field sensor device |
| CN104698409A (en) * | 2015-02-04 | 2015-06-10 | 江苏多维科技有限公司 | Single-chip high-intensity magnetic field X-axis linear magneto-resistance sensor provided with calibration coil/reset coil |
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| CN108717169A (en) * | 2018-06-22 | 2018-10-30 | 钱正洪 | A kind of two-dimensional magnetic field sensor |
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| CN108303660A (en) | 2018-07-20 |
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