CN107807289B - Method for predicting service life and evaluating reliability of direct current charging module - Google Patents
Method for predicting service life and evaluating reliability of direct current charging module Download PDFInfo
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Abstract
The invention provides a method for predicting the service life and evaluating the reliability of a direct current charging module, which comprises the steps of extracting a switching device and a capacitor in the direct current charging module, and obtaining circuit parameters of the whole circuit of the direct current charging module according to an electric model; respectively obtaining junction temperature of each switching device and nuclear temperature of each capacitor according to the thermal model; respectively establishing a life model for the switching devices and the capacitors, calculating the B10 life of each switching device and each capacitor, and obtaining the reliability of each switching device and each capacitor by combining two-parameter Weber distribution; multiplying the reliability of all the switching devices and the reliability of the capacitor to obtain the reliability of the direct current charging module, thereby obtaining a reliability curve of the reliability of the direct current charging module along with the change of time; a point with a reliability of 0.9 is found on the ordinate of the reliability curve, and the abscissa of the point is the B10 lifetime of the dc charging module. The invention obtains the service life and the reliability of the whole direct current charging module and provides powerful data support for the reliability of the direct current charging equipment of the electric automobile.
Description
Technical Field
The invention belongs to the technical field of new energy, and particularly relates to a method for predicting the service life and evaluating the reliability of a direct-current charging module.
Background
The development of new energy technology leads the electric automobile to be commercialized and scaled gradually, but the matching facilities of the electric automobile still have a series of problems when in use. As shown in fig. 1, in the fault of the dc charging device of the electric vehicle, 27% of the faults are caused by the dc charging module. Therefore, the service life and reliability of the direct current charging module have great influence on the whole direct current charging equipment of the electric automobile. There is a need for life prediction and reliability evaluation of dc charging modules.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a method for predicting the service life and evaluating the reliability of a DC charging module is provided.
The technical scheme adopted by the invention for solving the technical problems is as follows: a method for predicting the service life and evaluating the reliability of a direct current charging module is characterized by comprising the following steps: it comprises the following steps:
s1, extracting a switching device and a capacitor in the direct current charging module, and obtaining circuit parameters of the whole circuit of the direct current charging module according to the electric model;
s2, obtaining junction temperature of each switching element and nuclear temperature of each capacitor according to the thermal model;
s3, respectively establishing a life model for the switching devices and the capacitors, calculating the B10 life of each switching device and each capacitor, and obtaining the reliability of each switching device and each capacitor by combining two-parameter Weber distribution;
s4, multiplying the reliability of all the switching devices and the reliability of the capacitors to obtain the reliability of the direct current charging module, and accordingly obtaining a reliability curve of the reliability of the direct current charging module changing along with time; a point with a reliability of 0.9 is found on the ordinate of the reliability curve, and the abscissa of the point is the B10 lifetime of the dc charging module.
According to the method, the junction temperature of the switching device is obtained by the following steps:
Tc=Ta+Ptot·Zth(c-a);Tj=Tc+Ptot·Zth(j-c);
wherein: t isaIs ambient temperature; t iscIs the case temperature; zth(j-c)Calculating the equivalent thermal impedance between the junction and the shell by using a thermal impedance model of the switching device; zth(c-a)Is the thermal impedance between the enclosure and the environment; t isjThe junction temperature; ptotThe total power loss of the switching device is the sum of the conduction loss and the switching loss.
According to the method, the junction temperature of the switching device is obtained by the following steps:
a circuit of the direct current charging module is built by using PLECS thermal simulation software, a thermal description file containing thermal impedance model coefficients is added to the switch device through a data manual of the switch device, and junction temperature of the switch device is simulated to obtain a relation curve of the junction temperature and time.
According to the method, the nuclear temperature of the capacitor is obtained by the following steps:
Th=Ta+PCZth(h-a);
wherein: t iscIs the nuclear temperature of the capacitor; t isaIs ambient temperature; pCThe loss generated when the ripple current flows through the ESR of the capacitor; zth(h-a)Is the thermal impedance between the capacitive core and the environment.
By the junction temperature T of the switching device in the above-mentioned mannerjAnd calculating the total thermal cycle times when the switching device fails by using a Coffin-Manson-Arrhenius life model, wherein the thermal cycle times in each second time are the same as the ripple voltage frequency at two ends of the input side capacitor and have a value of twice power frequency, and converting the total thermal cycle times into the B10 life of the switching device.
According to the method, the maximum voltage V and the nuclear temperature T borne by the capacitor during workinghAnd a life model of the capacitor predicts the B10 life of the capacitor, the life model of the capacitor:
wherein: l is0For reference life under operating conditions, V0Is the voltage under the reference working condition, L is the service life under the actual working condition, V is the maximum voltage actually born by the capacitor, T0For reference conditionThe nuclear temperature, γ, is the voltage stress constant.
The invention has the beneficial effects that: the junction temperature of the switching device and the nuclear temperature of the capacitor are obtained by utilizing the thermal model and the electric model, the service life and the reliability of the switching device and the capacitor are obtained by utilizing the service life model of a single device, and finally the service life and the reliability of the whole direct current charging module are comprehensively obtained, so that powerful data support is provided for the reliability of direct current charging equipment of the electric automobile.
Drawings
FIG. 1 is a survey report chart of the institute of Electrical science, China.
Fig. 2 is a circuit diagram of an LLC resonant converter.
Fig. 3 is a diagram illustrating the ripple voltage on the input side capacitor.
FIG. 4 is a flowchart of a method according to an embodiment of the present invention.
Fig. 5 is a thermal impedance model topology of a switching device.
Fig. 6 is a diagram of a system reliability structure according to an embodiment of the invention.
Fig. 7 is a junction temperature fluctuation curve of a switching device according to an embodiment of the present invention.
FIG. 8 shows an embodiment f of the present inventions=0.8frReliability of switching devices and capacitors.
FIG. 9 shows an embodiment of the present invention fs=frReliability of switching devices and capacitors.
FIG. 10 shows an embodiment of the present invention fs=1.2frReliability of switching devices and capacitors.
FIG. 11 shows an embodiment of the present invention at different fsReliability of the time.
Detailed Description
The invention is further illustrated by the following specific examples and figures.
In order to achieve high power density and high efficiency, a common topology of a power module of a direct current charging pile is provided with a phase-shifted full-bridge converter and an LLC resonant converter, wherein the LLC resonant converter is widely used due to high efficiency and low cost. There are many circuit topologies in the DC charging module that can achieve high power density and high efficiency, and an LLC resonant converter is usually used as the DC/DC converter.
As shown in fig. 2, the LLC resonant converter is composed of input, full-bridge inversion, resonant cavity, transformer, full-bridge rectification, and output side DC-Link capacitor. Because the output of the preceding stage converter contains ripple voltage of twice power frequency, the input of the LLC resonant converter is connected with a capacitor CDCIs given in the form that the voltage across the capacitor is not constant and the voltage waveform across the capacitor is as shown in figure 3. Due to the switching frequency f of the switching devices in full-bridge inversionsIs varied in one region, operating at 3 different f for the convertersEvaluation of reliability at operating point fs=0.8fr;fs=1.0fr;fs=1.2fr. Resonant frequency frSuch as formula (1)
Wherein: l isr、CrRespectively, the inductance and capacitance in the resonant cavity.
When the LLC resonant converter works, the resonant frequency of the medium inductor and the capacitor of the resonant cavity is frSwitching frequency of the switching device is fs. The operating region of the converter being in the zero-voltage-switching (ZVS) region, i.e. the switching frequency fsCan be changed in a sub-area of the ZVS area, and the switching device can realize ZVS at the moment, thereby reducing the turn-on loss. Power loss and thermal stress of switching device with switching frequency fsMay vary. Due to designed resonance frequency frTime up to hundreds of kHz and switching frequency fsAt frAlthough the turn-on loss of the switching device is low at ZVS, the switching device operates at high frequency, the total power loss is still high, and high thermal stress is generated, so that the junction temperature of the switching device is increased, and the service life and reliability of the switching device are reduced. The DC-Link capacitor on the output side is an electrolytic capacitor and is used for buffering pulsating power, the service life of the capacitor is short, and ripple current can generate temperature rise when flowing through an Equivalent Series Resistance (ESR) of the capacitor, so that the service life of the capacitor is further shortened, and the ripple current can be reducedAnd low reliability. The lifetime of the devices limits the lifetime of the LLC resonant converter.
The invention provides a method for predicting the service life and evaluating the reliability of a direct current charging module, which comprises the following steps as shown in figure 4:
and S1, extracting a switching device and a capacitor in the direct current charging module, and obtaining circuit parameters of the whole circuit of the direct current charging module according to the electric model.
And S2, respectively obtaining the junction temperature of each switching element and the nuclear temperature of each capacitor according to the thermal model.
The junction temperature of the switching device can be obtained by:
Tc=Ta+Ptot·Zth(c-a)(2);
Tj=Tc+Ptot·Zth(j-c)(3);
wherein: t isaIs ambient temperature; t iscIs the case temperature; zth(j-c)Calculating the equivalent thermal impedance between the junction and the shell by using a thermal impedance model of the switching device; zth(c-a)Is the thermal impedance between the enclosure and the environment; t isjThe junction temperature; ptotThe total power loss of the switching device is the sum of the conduction loss and the switching loss.
The equivalent thermal impedance between the junction and the enclosure is calculated using the thermal impedance model of the switching device shown in fig. 5, i.e., the Foster model.
τk=Rk·Ck(5),
In the formula, RkIs the resistance value in the kth RC parallel unit in the Foster model, CkIs the capacitance value in the kth RC parallel unit, t is the time, taukAnd m is the total number of RC parallel units in the Foster model.
The junction temperature of the switching device can also be obtained by:
a circuit of the direct current charging module is built by using PLECS thermal simulation software, a thermal description file containing thermal impedance model coefficients is added to the switch device through a data manual of the switch device, and junction temperature of the switch device is simulated to obtain a relation curve of the junction temperature and time.
The nuclear temperature of the capacitor is obtained by the following steps:
Th=Ta+PCZth(h-a)(6);
wherein: t iscIs the nuclear temperature of the capacitor; t isaIs ambient temperature; pCThe loss generated when the ripple current flows through the ESR of the capacitor; zth(h-a)Is the thermal impedance between the capacitive core and the environment.
The ripple current flows through the ESR of the capacitor to generate loss PCCalculated as follows:
wherein: i.e. ipsin(ωpt + θ) is the current p-th harmonic, ESRpAt an angular frequency of ωpThe equivalent series resistance of the capacitor, n is the total number of harmonics.
S3, respectively establishing a life model for the switching devices and the capacitors, calculating the B10 life of each switching device and each capacitor, and obtaining the reliability of each switching device and each capacitor by combining two-parameter Weber distribution. The definition of B10 lifetime is: b10 life is the operating time point for a product, after which 10% of the products are expected to fail.
Junction temperature T through switching devicejAnd calculating the total thermal cycle times when the switching device fails by using a Coffin-Manson-Arrhenius life model, wherein the thermal cycle times in each second time are the same as the ripple voltage frequency at two ends of the input side capacitor and have a value of twice power frequency, and converting the total thermal cycle times into the B10 life of the switching device.
Wherein A and α are model parameters, △ TjAs amplitude of junction temperature fluctuation, TjmMaximum junction temperature, EaTo activation energy, kbBoltzmann constant. The frequency of the thermal cycle is the same as the ripple voltage frequency at both ends of the input side capacitor, and is twice the power frequency.
The parameters of the Coffin-Manson-Arrhenius model are listed in Table 1.
TABLE 1 Coffin-Manson-Arrhenius Life model parameters
Parameter(s) | Value of |
A | 3.4368*1014 |
α | -4.923 |
Ea | 0.066eV |
kb | 8.61733*10-5eV |
The reliability of the switching device is obtained by B10 service life of the switching device and two-parameter Weber distribution, the B10 service life of the switching device is substituted into t, R (t) is 0.9, the characteristic service life η is obtained, and a relation curve of time t and reliability R (t) is drawn to obtain a curve of the reliability of the switching device changing along with time.
Wherein η is the characteristic life when r (t) is 0.368, β is the shape parameter, and β of the switching device is 2.5.
According to the maximum voltage V and the nuclear temperature T borne by the capacitor during workinghAnd a life model of the capacitor predicts the B10 life of the capacitor, the life model of the capacitor:
wherein: l is0For reference life under operating conditions, V0Is the voltage under the reference working condition, L is the service life under the actual working condition, V is the maximum voltage actually born by the capacitor, T0Gamma is the voltage stress constant for the nuclear temperature under the reference condition.
The reliability of the capacitor is obtained by the service life of B10 of the capacitor and two-parameter Weber distribution, the value of the capacitor β is 5, the service life of B10 of the capacitor is substituted into t, R (t) is 0.9, the characteristic service life η is obtained, and a relation curve of time t and reliability R (t) is drawn to obtain a curve of the reliability of the capacitor changing along with the time.
S4, multiplying the reliability of all the switching devices and the reliability of the capacitors to obtain the reliability of the direct current charging module, and accordingly obtaining a reliability curve of the reliability of the direct current charging module changing along with time; a point with a reliability of 0.9 is found on the ordinate of the reliability curve, and the abscissa of the point is the B10 lifetime of the dc charging module.
On the basis of the device-level reliability, service life prediction and reliability analysis are carried out on the system, and a reliability block diagram is selected for the system-level reliability to be analyzed. Taking an LLC resonant converter system as an example, there is no redundancy in the LLC resonant converter system, and a failure of any device will cause a system failure, so the reliability block diagram adopts a series form, the system reliability structure is as shown in fig. 6, and the reliability model can be expressed as:
R(t)=RT1(t)RT2(t)RT3(t)RT4(t)RCf(t) (11),
wherein R (t) is the reliability of the system, RT1(t)~RT4(t) reliability of 4 switching devices, RCf(t) is the reliability of the DC-Link capacitor.
In the following, experiments are described with an example of an LLC resonant converter.
Simulation parameters of the 3.8kW LLC resonant converter are shown in table 2.
TABLE 2 LLC resonant converter parameters
Rated input voltage | 400V |
Rated output voltage | 450V |
Output voltage range | 200V~450V |
Rated output power | 3.8kW |
Resonant frequency fr | 110kHz |
Maximum output current | 8.5A |
Resonant inductor Lr | 19.33μH |
Excitation inductance Lm | 48.32μH |
Resonant capacitor Cr | 108.4nF |
DC-Link capacitor Cf | 68μF |
And (3) simulation results:
a simulation model is established in the PLECS thermal simulation software according to the parameters in the table 2, and the junction temperature of the switching device is obtained through simulation as shown in FIG. 7. The B10 lifetime of the switching device is calculated by the lifetime model of the formula (10), the B10 lifetime of the capacitor is calculated by the lifetime model of the formula (14), and the reliability distribution of the switching device and the capacitor at different frequencies is obtained by the two-parameter weber distribution, as shown in fig. 8, 9 and 10, where the point marked in the figure is the B10 lifetime point. The reliability of each device is multiplied by the reliability of the device block diagram model to obtain the service life and reliability of the system as shown in fig. 11.
The above embodiments are only used for illustrating the design idea and features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the content of the present invention and implement the present invention accordingly, and the protection scope of the present invention is not limited to the above embodiments. Therefore, all equivalent changes and modifications made in accordance with the principles and concepts disclosed herein are intended to be included within the scope of the present invention.
Claims (6)
1. A method for predicting the service life and evaluating the reliability of a direct current charging module is characterized by comprising the following steps: it comprises the following steps:
s1, extracting a switching device and a capacitor in the direct current charging module, and obtaining circuit parameters of the whole circuit of the direct current charging module according to the electric model;
s2, obtaining junction temperature of each switching element and nuclear temperature of each capacitor according to the thermal model;
s3, respectively establishing a life model for the switching devices and the capacitors, calculating the B10 life of each switching device and each capacitor, and obtaining the reliability of each switching device and each capacitor by combining two-parameter Weber distribution;
s4, multiplying the reliability of all the switching devices and the reliability of the capacitors to obtain the reliability of the direct current charging module, and accordingly obtaining a reliability curve of the reliability of the direct current charging module changing along with time; a point with a reliability of 0.9 is found on the ordinate of the reliability curve, and the abscissa of the point is the B10 lifetime of the dc charging module.
2. The direct current charging module life prediction and reliability assessment method according to claim 1, characterized in that: the junction temperature of the switching device is obtained by the following method:
Tc=Ta+Ptot·Zth(c-a);Tj=Tc+Ptot·Zth(j-c);
wherein: t isaIs ambient temperature; t iscIs the case temperature; zth(j-c)Calculating the equivalent thermal impedance between the junction and the shell by using a thermal impedance model of the switching device; zth(c-a)Is the thermal impedance between the enclosure and the environment; t isjThe junction temperature; ptotThe total power loss of the switching device is the sum of the conduction loss and the switching loss.
3. The direct current charging module life prediction and reliability assessment method according to claim 1, characterized in that: the junction temperature of the switching device is obtained by the following method:
a circuit of the direct current charging module is built by using PLECS thermal simulation software, a thermal description file containing thermal impedance model coefficients is added to the switch device through a data manual of the switch device, and junction temperature of the switch device is simulated to obtain a relation curve of the junction temperature and time.
4. The direct current charging module life prediction and reliability assessment method according to claim 1, characterized in that: the nuclear temperature of the capacitor is obtained by the following steps:
Th=Ta+PCZth(h-a);
wherein: t ishIs the nuclear temperature of the capacitor; t isaIs ambient temperature; pCThe loss generated when the ripple current flows through the ESR of the capacitor; zth(h-a)Is the thermal impedance between the capacitive core and the environment.
5. The direct current charging module life prediction and reliability assessment method according to claim 1, characterized in that: junction temperature T through switching devicejAnd calculating the total thermal cycle times when the switching device fails by using a Coffin-Manson-Arrhenius life model, wherein the thermal cycle times in each second time are the same as the ripple voltage frequency at two ends of the input side capacitor and have a value of twice power frequency, and converting the total thermal cycle times into the B10 life of the switching device;
wherein A and α are model parameters, and delta TjAs amplitude of junction temperature fluctuation, TjmMaximum junction temperature, EaTo activation energy, kbBoltzmann constant.
6. The direct current charging module life prediction and reliability assessment method according to claim 1, characterized in that: according to the maximum voltage V and the nuclear temperature T borne by the capacitor during workinghAnd a life model of the capacitor predicts the B10 life of the capacitor, the life model of the capacitor:
wherein: l is0For reference life under operating conditions, V0Is the voltage under the reference working condition, L is the service life under the actual working condition, V is the maximum voltage actually born by the capacitor, T0Gamma is the voltage stress constant for the nuclear temperature under the reference condition.
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CN109710971A (en) * | 2018-11-20 | 2019-05-03 | 国家电网有限公司 | IGBT device reliability estimation method, device and model in high voltage DC breaker |
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CN112698130B (en) * | 2020-12-11 | 2022-02-22 | 西安交通大学 | Task profile-based accelerated life test device and method for metallized film capacitor |
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