CN107195466A - A kind of preparation method of capacitor - Google Patents
A kind of preparation method of capacitor Download PDFInfo
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- CN107195466A CN107195466A CN201710409179.XA CN201710409179A CN107195466A CN 107195466 A CN107195466 A CN 107195466A CN 201710409179 A CN201710409179 A CN 201710409179A CN 107195466 A CN107195466 A CN 107195466A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 51
- 239000003990 capacitor Substances 0.000 title claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 52
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 35
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 33
- 239000002238 carbon nanotube film Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 28
- 239000012528 membrane Substances 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 10
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 230000008595 infiltration Effects 0.000 claims description 9
- 238000001764 infiltration Methods 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 8
- 230000007613 environmental effect Effects 0.000 claims description 8
- 239000012634 fragment Substances 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000004745 nonwoven fabric Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 claims description 3
- 229910001486 lithium perchlorate Inorganic materials 0.000 claims description 3
- -1 tetraethylammonium tetrafluoroborate Chemical compound 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- WDGKXRCNMKPDSD-UHFFFAOYSA-N lithium;trifluoromethanesulfonic acid Chemical compound [Li].OS(=O)(=O)C(F)(F)F WDGKXRCNMKPDSD-UHFFFAOYSA-N 0.000 claims description 2
- 150000001345 alkine derivatives Chemical class 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000005304 joining Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 6
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
- H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
- H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a kind of preparation method of capacitor, the preparation method comprises the following steps：（1）The preparation of super in-line arrangement carbon nano pipe array；（2）The preparation of carbon nano-tube film；（3）The formation of carbon nano-tube thin-film structure；（4）The preparation of capacitor.The method of preparing capacitor of the present invention is simple and easy to apply, and CNT has good electric conductivity and the specific surface area of itself is big, and obtained ultracapacitor has higher specific capacitance and electrical conductivity；Carbon nano-tube thin-film structure includes multiple CNTs for joining end to end and aligning, there are multiple microcellular structures between adjacent CNT, so that forming the microcellular structure of substantial amounts of uniform and regular distribution in carbon nano-tube thin-film structure, this advantageously forms electric charge path with good conductivity.
Description
Technical field
The present invention relates to technical field of electronic components, more particularly to a kind of preparation method of capacitor.
Background technology
With making rapid progress for electronic information technology, the update speed of digital electronic goods is more and more faster, with flat board
TV（LCD and PDP）, notebook computer, the consumer electronics product volume of production and marketing sustainable growth based on the product such as digital camera, band
The growth of capacitor industry is moved.
Existing capacitor generally comprises electrode, barrier film and electrolyte solution, and the electrode and barrier film are all disposed within the electrolysis
In liquor.The electrode includes a collector and the electrode material being arranged on the collector.The preparation side of existing capacitor
Method is typically after electrode material is fully ground, a certain amount of binding agent to be added wherein and is stirred, then passes through die pressing, cold
The drawing methods such as isostatic pressing method, hot isostatic pressing method are compressed on the collectors such as nickel foam, graphite flake, nickel sheet, aluminium flake or copper sheet, i.e.,
The electrode of definite shape is can be made into, then electrode is arranged in the electrolyte solution containing barrier film and can be made into ultracapacitor,
The preparation method is more complicated.Therefore, it is necessary to provide a kind of capacitor with high-capacitance and high power density.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of preparation method of capacitor, good using CNT
Electric conductivity and specific surface area, method are simple and easy to apply, and obtained capacitor has higher specific capacitance and electrical conductivity.
The present invention solves technical problem and utilizes following technical scheme：
The invention provides a kind of preparation method of capacitor, comprise the following steps：
（1）The preparation of super in-line arrangement carbon nano pipe array：Smooth substrate is chosen, in the catalyst layer of substrate surface even spread one, is put
Put and annealed 40-50 minutes in 800-850 DEG C of air, then the substrate of annealing is placed in reacting furnace, in nitrogen or argon gas
Environmental protection under be heated to 600-620 DEG C, be passed through carbon-source gas react 8-12 minute, grow obtain 100-500 μm of height
Carbon nano pipe array, stacking at least two obtains super in-line arrangement CNT parallel and perpendicular to the carbon nano pipe array of substrate grown
Array；
（2）The preparation of carbon nano-tube film：In step（1）Width 200-300 μ are chosen in the super in-line arrangement carbon nano pipe array prepared
M carbon nano-tube bundle fragment, along a direction substantially perpendicular the carbon nano pipe array direction of growth stretched, obtain continuous CNT
Film；
（3）The formation of carbon nano-tube thin-film structure：Two panels identical copper sheet is chosen as the first current collection layer and the second current collection layer, will
At least one layer of carbon nano-tube film is laid on the surface of current collection layer, forms the carbon nano-tube thin-film structure of self-supporting；
（4）The preparation of capacitor：Non-woven fabrics is chosen as membrane layer, is placed respectively in the both sides of membrane layer and is equipped with CNT
The first current collection layer and the second current collection layer of membrane structure, are put into shell together, and injection electrolyte post package obtains the capacitor.
Preferably, the step（1）Smooth substrate is selected from phosphorous, nitrogen type or the silicon base containing oxide layer.
Preferably, the step（1）One or more combinations of the catalyst layer material in iron, cobalt, nickel.
Preferably, the step（1）Carbon-source gas are acetylene, ethene, methane or ethane.
Preferably, the step（1）The height of carbon nano pipe array is 200-300 μm.
Preferably, the step（3）Carbon nano-tube thin-film structure can use organic solvent infiltration processing 5-8 minutes.
Preferably, the organic solvent is methanol, ethanol, acetone, dichloromethane or acetonitrile.
Preferably, the step（4）Electrolyte is selected from sodium hydroxide solution, potassium hydroxide solution, aqueous sulfuric acid, hydrochloric acid
The aqueous solution, tetraethylammonium tetrafluoroborate, lithium perchlorate or trifluoromethanesulfonic acid lithium.
Compared with prior art, the present invention has the advantages that：
（1）The method of preparing capacitor of the present invention, simple and easy to apply, CNT has good electric conductivity and the ratio table of itself
Area is big, and obtained ultracapacitor has higher specific capacitance and electrical conductivity；Carbon nano tube growth in carbon nano pipe array
Uniformly, the CNT thus in carbon nano-tube thin-film structure is uniformly dispersed, and preparation method is simple, it is easy to practical application；Carbon
Nano-tube film structure includes multiple CNTs for joining end to end and aligning, and exists between adjacent CNT multiple
Microcellular structure so that the microcellular structure of substantial amounts of uniform and regular distribution is formed in carbon nano-tube thin-film structure, this is conducive to shape
Into electric charge path with good conductivity.
（2）The method of preparing capacitor of the present invention, carbon nano-tube thin-film structure can use organic solvent infiltration to handle,
In the presence of the surface tension of volatile organic solvent, parallel CNT fragment can be easier to assemble in carbon nano-tube film
Into carbon nano-tube bundle.
Embodiment
Invention is described in further detail below in conjunction with specific embodiment.
Embodiment 1.
A kind of preparation method of capacitor, comprises the following steps：
（1）The preparation of super in-line arrangement carbon nano pipe array：Smooth phosphorous silicon base is chosen, in the iron material of substrate surface even spread one
Catalyst layer, be placed in 800-850 DEG C of air anneal 40-50 minutes, then the substrate of annealing is placed in reacting furnace,
600-620 DEG C is heated under the environmental protection of nitrogen, ethylene reaction is passed through 8-12 minutes, growth obtains 100-500 μm of height
Carbon nano pipe array, stack at least two and obtain super in-line arrangement carbon nanometer parallel and perpendicular to the carbon nano pipe array of substrate grown
Pipe array；
（2）The preparation of carbon nano-tube film：In step（1）Width 200-300 μ are chosen in the super in-line arrangement carbon nano pipe array prepared
M carbon nano-tube bundle fragment, along a direction substantially perpendicular the carbon nano pipe array direction of growth stretched, obtain continuous CNT
Film；
（3）The formation of carbon nano-tube thin-film structure：Two panels identical copper sheet is chosen as the first current collection layer and the second current collection layer, will
At least one layer of carbon nano-tube film is laid on the surface of current collection layer, forms the carbon nano-tube thin-film structure of self-supporting, uses ethanol
Infiltration processing 5-8 minutes；
（4）The preparation of capacitor：Non-woven fabrics is chosen as membrane layer, is placed respectively in the both sides of membrane layer and is equipped with CNT
The first current collection layer and the second current collection layer of membrane structure, are put into shell together, and injection aqueous sulfuric acid post package obtains the electricity
Container.
Embodiment 2.
A kind of preparation method of capacitor, comprises the following steps：
（1）The preparation of super in-line arrangement carbon nano pipe array：Smooth nitrogen type silicon base is chosen, in the cobalt material of substrate surface even spread one
Catalyst layer, be placed in 800-850 DEG C of air anneal 40-50 minutes, then the substrate of annealing is placed in reacting furnace,
600-620 DEG C is heated under the environmental protection of nitrogen, acetylene reaction is passed through 8-12 minutes, growth obtains 200-300 μm of height
Carbon nano pipe array, stack at least two and obtain super in-line arrangement carbon nanometer parallel and perpendicular to the carbon nano pipe array of substrate grown
Pipe array；
（2）The preparation of carbon nano-tube film：In step（1）Width 200-300 μ are chosen in the super in-line arrangement carbon nano pipe array prepared
M carbon nano-tube bundle fragment, along a direction substantially perpendicular the carbon nano pipe array direction of growth stretched, obtain continuous CNT
Film；
（3）The formation of carbon nano-tube thin-film structure：Two panels identical copper sheet is chosen as the first current collection layer and the second current collection layer, will
At least one layer of carbon nano-tube film is laid on the surface of current collection layer, forms the carbon nano-tube thin-film structure of self-supporting, uses acetone
Infiltration processing 5-8 minutes；
（4）The preparation of capacitor：Non-woven fabrics is chosen as membrane layer, is placed respectively in the both sides of membrane layer and is equipped with CNT
The first current collection layer and the second current collection layer of membrane structure, are put into shell together, and injection tetraethylammonium tetrafluoroborate post package is obtained
To the capacitor.
Embodiment 3.
A kind of preparation method of capacitor, comprises the following steps：
（1）The preparation of super in-line arrangement carbon nano pipe array：The smooth silicon base containing oxide layer is chosen, is uniformly applied in substrate surface
The catalyst layer of cloth nickel material, is placed in 800-850 DEG C of air and anneals 40-50 minutes, be then placed in the substrate of annealing
In reacting furnace, 600-620 DEG C is heated under the environmental protection of nitrogen, methane reaction is passed through 8-12 minutes, growth obtains height
200-300 μm of carbon nano pipe array, stacking at least two is surpassed parallel and perpendicular to the carbon nano pipe array of substrate grown
In-line arrangement carbon nano pipe array；
（2）The preparation of carbon nano-tube film：In step（1）Width 200-300 μ are chosen in the super in-line arrangement carbon nano pipe array prepared
M carbon nano-tube bundle fragment, along a direction substantially perpendicular the carbon nano pipe array direction of growth stretched, obtain continuous CNT
Film；
（3）The formation of carbon nano-tube thin-film structure：Two panels identical copper sheet is chosen as the first current collection layer and the second current collection layer, will
At least one layer of carbon nano-tube film is laid on the surface of current collection layer, forms the carbon nano-tube thin-film structure of self-supporting, uses dichloro
Methane infiltration processing 5-8 minutes；
（4）The preparation of capacitor：Non-woven fabrics is chosen as membrane layer, is placed respectively in the both sides of membrane layer and is equipped with CNT
The first current collection layer and the second current collection layer of membrane structure, are put into shell together, and injection sodium hydroxide solution post package is somebody's turn to do
Capacitor.
Embodiment 4.
A kind of preparation method of capacitor, comprises the following steps：
（1）The preparation of super in-line arrangement carbon nano pipe array：The smooth silicon base containing oxide layer is chosen, is uniformly applied in substrate surface
The catalyst layer of cloth iron material, is placed in 800-850 DEG C of air and anneals 40-50 minutes, be then placed in the substrate of annealing
In reacting furnace, 600-620 DEG C is heated under the environmental protection of nitrogen, acetylene reaction is passed through 8-12 minutes, growth obtains height
200-300 μm of carbon nano pipe array, stacking at least two is surpassed parallel and perpendicular to the carbon nano pipe array of substrate grown
In-line arrangement carbon nano pipe array；
（2）The preparation of carbon nano-tube film：In step（1）Width 200-300 μ are chosen in the super in-line arrangement carbon nano pipe array prepared
M carbon nano-tube bundle fragment, along a direction substantially perpendicular the carbon nano pipe array direction of growth stretched, obtain continuous CNT
Film；
（3）The formation of carbon nano-tube thin-film structure：Two panels identical copper sheet is chosen as the first current collection layer and the second current collection layer, will
At least one layer of carbon nano-tube film is laid on the surface of current collection layer, forms the carbon nano-tube thin-film structure of self-supporting, uses acetonitrile
Infiltration processing 5-8 minutes；
（4）The preparation of capacitor：Non-woven fabrics is chosen as membrane layer, is placed respectively in the both sides of membrane layer and is equipped with CNT
The first current collection layer and the second current collection layer of membrane structure, are put into shell together, and injection potassium hydroxide solution post package is somebody's turn to do
Capacitor.
Embodiment 5.
A kind of preparation method of capacitor, comprises the following steps：
（1）The preparation of super in-line arrangement carbon nano pipe array：Smooth phosphorous silicon base is chosen, in substrate surface even spread iron material
Catalyst layer, be placed in 800-850 DEG C of air anneal 40-50 minutes, then the substrate of annealing is placed in reacting furnace,
600-620 DEG C is heated under the environmental protection of nitrogen, acetylene reaction is passed through 8-12 minutes, growth obtains 200-300 μm of height
Carbon nano pipe array, stack at least two and obtain super in-line arrangement carbon nanometer parallel and perpendicular to the carbon nano pipe array of substrate grown
Pipe array；
（2）The preparation of carbon nano-tube film：In step（1）Width 200-300 μ are chosen in the super in-line arrangement carbon nano pipe array prepared
M carbon nano-tube bundle fragment, along a direction substantially perpendicular the carbon nano pipe array direction of growth stretched, obtain continuous CNT
Film；
（3）The formation of carbon nano-tube thin-film structure：Two panels identical copper sheet is chosen as the first current collection layer and the second current collection layer, will
At least one layer of carbon nano-tube film is laid on the surface of current collection layer, forms the carbon nano-tube thin-film structure of self-supporting, uses methanol
Infiltration processing 5-8 minutes；
（4）The preparation of capacitor：Non-woven fabrics is chosen as membrane layer, is placed respectively in the both sides of membrane layer and is equipped with CNT
The first current collection layer and the second current collection layer of membrane structure, are put into shell together, and injection lithium perchlorate post package obtains the electric capacity
Device.
Embodiment 6.
A kind of preparation method of capacitor, comprises the following steps：
（1）The preparation of super in-line arrangement carbon nano pipe array：Smooth phosphorous silicon base is chosen, in substrate surface even spread nickel material
Catalyst layer, be placed in 800-850 DEG C of air anneal 40-50 minutes, then the substrate of annealing is placed in reacting furnace,
600-620 DEG C is heated under the environmental protection of nitrogen, acetylene reaction is passed through 8-12 minutes, growth obtains 200-300 μm of height
Carbon nano pipe array, stack at least two and obtain super in-line arrangement carbon nanometer parallel and perpendicular to the carbon nano pipe array of substrate grown
Pipe array；
（2）The preparation of carbon nano-tube film：In step（1）Width 200-300 μ are chosen in the super in-line arrangement carbon nano pipe array prepared
M carbon nano-tube bundle fragment, along a direction substantially perpendicular the carbon nano pipe array direction of growth stretched, obtain continuous CNT
Film；
（3）The formation of carbon nano-tube thin-film structure：Two panels identical copper sheet is chosen as the first current collection layer and the second current collection layer, will
At least one layer of carbon nano-tube film is laid on the surface of current collection layer, forms the carbon nano-tube thin-film structure of self-supporting, uses ethanol
Infiltration processing 5-8 minutes；
（4）The preparation of capacitor：Non-woven fabrics is chosen as membrane layer, is placed respectively in the both sides of membrane layer and is equipped with CNT
The first current collection layer and the second current collection layer of membrane structure, are put into shell together, and injection aqueous hydrochloric acid solution post package obtains the electricity
Container.
Described above is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical schemes belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art
Those of ordinary skill for, some improvements and modifications without departing from the principles of the present invention, these improve and profit should regard
For protection scope of the present invention.
Claims (8)
1. a kind of preparation method of capacitor, it is characterised in that comprise the following steps：
（1）The preparation of super in-line arrangement carbon nano pipe array：Smooth substrate is chosen, in the catalyst layer of substrate surface even spread one, is put
Put and annealed 40-50 minutes in 800-850 DEG C of air, then the substrate of annealing is placed in reacting furnace, in nitrogen or argon gas
Environmental protection under be heated to 600-620 DEG C, be passed through carbon-source gas react 8-12 minute, grow obtain 100-500 μm of height
Carbon nano pipe array, stacking at least two obtains super in-line arrangement CNT parallel and perpendicular to the carbon nano pipe array of substrate grown
Array；
（2）The preparation of carbon nano-tube film：In step（1）Width 200-300 μ are chosen in the super in-line arrangement carbon nano pipe array prepared
M carbon nano-tube bundle fragment, along a direction substantially perpendicular the carbon nano pipe array direction of growth stretched, obtain continuous CNT
Film；
（3）The formation of carbon nano-tube thin-film structure：Two panels identical copper sheet is chosen as the first current collection layer and the second current collection layer, will
At least one layer of carbon nano-tube film is laid on the surface of current collection layer, forms the carbon nano-tube thin-film structure of self-supporting；
（4）The preparation of capacitor：Non-woven fabrics is chosen as membrane layer, is placed respectively in the both sides of membrane layer and is equipped with CNT
The first current collection layer and the second current collection layer of membrane structure, are put into shell together, and injection electrolyte post package obtains the capacitor.
2. the preparation method of capacitor according to claim 1, it is characterised in that the step（1）Smooth substrate is selected from
Phosphorous, nitrogen type or the silicon base containing oxide layer.
3. the preparation method of capacitor according to claim 1, it is characterised in that the step（1）Catalyst layer material
One or more combinations in iron, cobalt, nickel.
4. the preparation method of capacitor according to claim 1, it is characterised in that the step（1）Carbon-source gas are second
Alkynes, ethene, methane or ethane.
5. the preparation method of capacitor according to claim 1, it is characterised in that the step（1）Carbon nano pipe array
Height be 200-300 μm.
6. the preparation method of capacitor according to claim 1, it is characterised in that the step（3）Carbon nano-tube film
Structure can use organic solvent infiltration processing 5-8 minutes.
7. the preparation method of capacitor according to claim 6, it is characterised in that the organic solvent be methanol, ethanol,
Acetone, dichloromethane or acetonitrile.
8. the preparation method of capacitor according to claim 1, it is characterised in that the step（4）Electrolyte is selected from hydrogen
Sodium hydroxide solution, potassium hydroxide solution, aqueous sulfuric acid, aqueous hydrochloric acid solution, tetraethylammonium tetrafluoroborate, lithium perchlorate or trifluoro
Methanesulfonic acid lithium.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030143453A1 (en) * | 2001-11-30 | 2003-07-31 | Zhifeng Ren | Coated carbon nanotube array electrodes |
| CN101425380A (en) * | 2007-11-02 | 2009-05-06 | 清华大学 | Super capacitor and preparing method therefor |
| CN101471184A (en) * | 2007-12-27 | 2009-07-01 | 清华大学 | Super capacitor |
| TWI312337B (en) * | 2005-12-16 | 2009-07-21 | Hon Hai Prec Ind Co Ltd | Method for making the carbon nanotubes silk |
| CN101937776A (en) * | 2010-07-14 | 2011-01-05 | 清华大学 | Super capacitor |
-
2017
- 2017-06-02 CN CN201710409179.XA patent/CN107195466A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030143453A1 (en) * | 2001-11-30 | 2003-07-31 | Zhifeng Ren | Coated carbon nanotube array electrodes |
| TWI312337B (en) * | 2005-12-16 | 2009-07-21 | Hon Hai Prec Ind Co Ltd | Method for making the carbon nanotubes silk |
| CN101425380A (en) * | 2007-11-02 | 2009-05-06 | 清华大学 | Super capacitor and preparing method therefor |
| CN101471184A (en) * | 2007-12-27 | 2009-07-01 | 清华大学 | Super capacitor |
| CN101937776A (en) * | 2010-07-14 | 2011-01-05 | 清华大学 | Super capacitor |
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