CN106953010A - A kind of organic field effect tube memory based on polymer-doped semi-conductor nano particles - Google Patents
A kind of organic field effect tube memory based on polymer-doped semi-conductor nano particles Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
Abstract
The present invention relates to a kind of organic field effect tube memory based on polymer-doped semi-conductor nano particles and preparation method thereof, belong to semicon industry memory technology and biofilm technical field.The device architecture of the invention is followed successively by source-drain electrode, organic semiconductor, the thin polymer film of doped semiconductor nanocrystal particle, gate insulation layer, gate electrode from top to bottom, polymer film layer provided with one layer of doped semiconductor nanocrystal particle between the organic semiconductor and gate insulation layer of the organic field effect tube memory, and as charge storage layer for capturing electric charge.The present invention makes its memory capacity, switching speed and storage stability be greatly improved by the storage performance of doped semiconductor nanocrystal particle Optimal improvements device in polymer again；And the device is largely prepared using solwution method, and low cost is easily promoted.
Description
Technical field
The invention belongs to semicon industry memory technology field and biofilm technical field, and in particular to one kind is based on
Organic field effect tube memory of biofilm and preparation method thereof.
Background technology
Organic field effect tube is as the basic component in circuit, because of its extensive material source, gentle processing
Mode, it is easy to the good characteristics that large area is prepared on a large scale, mutually agrees with the developing direction of following wearable electronic industry.Simultaneously
The structures shape of organic field effect tube it there is very abundant application of function, such as luminous product, storage device, sensing
Device, switch etc., therefore there is application prospect widely in following information electronic applications.
It is used as a kind of multifunction device, organic field effect tube memory (Organic Field-effect
Transistor Memory, OFETM) it can be used for new display element, memory element or RFID tag.In order to prepare
The outstanding and practical OFETM of properties, a large amount of new materials, new technology and new device structure obtain everybody extensive concern.Mesh
Before, the report in document, the scheme for lifting OFETM performances is mainly：(1) design synthesis has high mobility, height
The organic semiconducting materials of on-off ratio, to strengthen transistor characteristic (Adv.Mater.2015,27,6885 of device；
Sci.Rep.,2015,5,16457)；(2) design, synthesize with nonplanar structure, the macromolecule that hydrophobicity is strong, dielectric constant is small
Material (Adv.Funct.Mater.2008,18,3678), to strengthen the capture and storage to electric charge；(3) using physical doping,
The device architecture such as multi-heterostructure-layerses (Adv.Mater.2015,27,228；J.Mater.Chem.C, 2015,3,3173), strengthen light
Raw exciton dissociation efficiency, lifting charge storage density and time data memory.
From the point of view of domestic and international overall progress at present, OFETM still faces following challenge：(1) current research remains unchanged
It is concentrated mainly on memory phenomenon and storage behavioral study to OFETM, to photoresponse and the common enhancement effect of storage characteristics
Lack research；(2) operating voltage it is too high (>100V), the excessively slow (incident illumination of speed of photoresponse>1s), storage density is low (is difficult to reality
Existing multistage storage), light-to-dark-currents ratio it is relatively low (<100), data stability is poor (holds time<105s)；(3) electric Ultrahigh has
Treat further explaination and System Approach.
In view of the foregoing, the present invention provides a kind of based on polymer-doped semi-conductor nano particles organic effect crystal
Pipe memory and preparation method thereof, the doping memory can improve its stability and tolerance, and with low operation electricity
Pressure, high response speed, high storage density etc..
The content of the invention
The above-mentioned technical problem existed for existing OFETM, the present invention proposes that one kind is received based on polymer-doped semiconductor
Organic field effect tube memory of rice corpuscles and preparation method thereof, does not increase technology difficult on the basis of existing excellent material
Degree, devises new accumulation layer technology of preparing, and is applied in OFETM, serves as the charge storage layer of memory, to improve
The stability and tolerance of memory.
Technical scheme proposed by the present invention is as described below：
The present invention provides a kind of based on polymer-doped semi-conductor nano particles organic field effect tube memory, described
Organic field effect tube memory includes source-drain electrode, organic semiconductor layer, gate insulation layer, gate electrode successively from top to bottom,
It is characterized in that：Mixed between the organic semiconductor layer and gate insulation layer of the organic field effect tube memory provided with polymer
Miscellaneous semi-conductor nano particles film layer, the layer is used to capture electric charge as charge storage layer.
That is, the structure of the transistorized memory is to be covered in the gate insulation layer on grid, the grid are formed at
The film layer that the polymer doped with semi-conductor nano particles on insulating barrier is constituted, is formed at organic on the film layer
Semiconductor layer, and it is formed at the source-drain electrode of the organic semiconductor layer surface channel region both sides.
Further, transistorized memory of the present invention also includes substrate and is formed at the gate electrode of substrate.
Polymer in the polymer-doped semi-conductor nano particles film layer is selected from low-k polymer materials,
The low-k polymer materials may be selected from one kind in PVK, polystyrene or polymethyl-benzene e pioic acid methyl ester
Or a variety of mixtures.The film thickness of the film layer is 15~20nm.
Semi-conductor nano particles in the polymer-doped semi-conductor nano particles film layer select C60。
Use the polymer-doped semi-conductor nano particles of low-k so that the polymer of low-k is with partly leading
Body nano-particle is supplemented and lifted to the capture ability of electric charge, improves memory capacity, stability and tolerance.The present invention
By the storage performance of the doped semiconductor nanocrystal particle Optimal improvements device in polymer, make its memory capacity, switching speed
It is greatly improved with storage stability.
The material that the substrate is used is highly doped silicon chip, sheet glass or plastics PET.
The material that the gate electrode is used is highly doped silicon, aluminium, copper, silver, gold, titanium or tantalum.
The gate insulation layer is covered in whole surface gate electrode, connecing between isolation gate electrode and porous polymer film layer
Touch, its insulating properties is good；The material that the gate insulation layer is used is silica, aluminum oxide, zirconium oxide, polystyrene PS or poly-
Vinylpyrrolidone PVP, the film thickness of the gate insulation layer is 50~300nm.
The material that the organic semiconductor layer is used is pentacene, aphthacene, titan bronze, fluorination titan bronze, rubrene, simultaneously
Triphen or 3- hexyl thiophenes；The organic semiconductor layer uses thermal vacuum evaporation film-forming method film forming, is covered in gate electrode insulation surface
Upper formation conducting channel, makes it be in close contact with polymer film layer to reduce contact berrier during carrier tunnelling, promotes to carry
The tunnelling migration of stream, its thickness is 30~50nm.
The source-drain electrode is grown in conducting channel both sides, and its material used is metal or organic conductor material, and it is thick
Spend for 60~100nm, its preparation method is magnetron sputtering method or ink-jet printing process, vacuum vapour deposition；It is preferred that, the source and drain electricity
Pole material is copper or gold.
Present invention also offers the above-mentioned organic field effect tube storage based on polymer-doped semi-conductor nano particles
The preparation method of device, specifically includes following steps：
(1) advanced low-k materials polymer solution is prepared, low boiling point solvent is dissolved in, its concentration is 3~5mg/ml；
(2) semiconductor solution is prepared, low boiling point solvent is dissolved in, its concentration is 1~2mg/ml；
(3) solution for preparing above-mentioned (1) and (2) process is using mol ratio as 2:1 ratio mixing, and surpass in Ultrasound Instrument
Sound 30min；
(4) as substrate, and on substrate, formation gate electrode and gate insulation layer obtain substrate to selection suitable material, and grid are exhausted
The thickness of edge layer film is 50~300nm, cleans up and dried after substrate；
(5) the clean substrate after drying is handled into 3~5min using UV ozone；
(6) solution for having configured spin-coating step (3) above the substrate in step (5), thickness is 15~20nm, by spin coating
Good sample 80 DEG C of dry 30min in an oven；
(7) vacuum evaporation semiconductor layer and source-drain electrode above the sample prepared in step (5).
It is preferred that, the low boiling point solvent in step (1) is toluene, and need not remove water process
It is preferred that, the spin coating process in step (6) is carried out in nitrogen glove box, spin coating in atmosphere, air humidity control
System is 40~50%；In drying process, the aqueous phase in residual solvent and film is removed, obtaining Uniform Doped has semiconductor nano grain
The thin polymer film of minor structure.
It is preferred that, the semi-conducting material of step (7) described vacuum evaporation is pentacene, and evaporation rate isVacuum control
System is 6 × 10-5Pa~6 × 10-4Pa, thickness is controlled in 30~50nm using crystal oscillator；Step (7) the vacuum evaporation source and drain electricity
Extremely copper, evaporation rateThickness is controlled in 60~100nm.
The present invention has the advantages that：1st, this organic field effect tube memory construction that the present invention is provided,
The preparation technology of device is simplified while boost device partial properties；2nd, the memory construction is in conventional floating gate type crystal
Optimize structure on the basis of pipe memory, the floating gate layer and tunnel layer in floating gate type transistorized memory are optimized for one layer, both
The device property of floating gate type device, and optimised devices structure are remained, is greatly reduced and prepares during device between layers
Influence each other；3rd, the memory is largely prepared using solwution method, and low cost is easily promoted.
Brief description of the drawings
The present invention is described further below in conjunction with the accompanying drawings.
The floating gate type OFET memory construction schematic diagrames that Fig. 1 is used by the embodiment of the present invention 1；
Fig. 2 be the embodiment of the present invention 1 in the spin-coated thin polymer film for being doped with semi-conductor nano particles and drying terminate
AFM figures afterwards；
Fig. 3 is the AFM figures after vacuum evaporation organic semiconductor layer in the embodiment of the present invention 1；
Fig. 4 is the electric property curve of transistorized memory made from the embodiment of the present invention 1；
Fig. 5 is the storage characteristics transfer curve of transistorized memory made from the embodiment of the present invention 1；
Fig. 6 is write-in-reading-erasing-reading characteristic curve of transistorized memory made from the embodiment of the present invention 1；
Fig. 7 is the data holding ability of transistorized memory made from the embodiment of the present invention 1.
Embodiment
In order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art, below in conjunction with embodiment and
The present invention will be described in detail for accompanying drawing, it is mentioned that accompanying drawing be suitable only for following embodiments, it is common for this area
For technical staff, other accompanying drawings can also be obtained according to the method mentioned in the present invention.But, protection scope of the present invention
It is not limited to following embodiments.
Embodiment 1
The invention provides a kind of organic field effect tube memory construction, its structural representation as shown in figure 1, bag
Include：
Substrate；
It is formed at the gate electrode of the substrate；
It is covered in the gate insulation layer on the gate electrode；
The polymer film layer for the doped semiconductor nanocrystal particle being formed on the gate insulation layer；
It is formed at the organic semiconductor layer in doped polymer film layer；And
It is formed at the source-drain electrode of the organic semiconductor layer surface channel region both sides.
In the technical scheme of the present embodiment, heavily doped silicon is used as substrate and gate electrode；One layer of 300nm silica conduct
Gate insulation layer；The polymer film layer of doped semiconductor nanocrystal particle is made up of polymers polystyrene, semi-conductor nano particles
By C60Prepare, thickness is 16nm after it adulterates；The thick pentacenes of one layer of 50nm are deposited with above gate insulation layer and serve as organic semiconductor
Layer；In conducting channel both sides, evaporation metal copper is used as source-drain electrode again.
When actually preparing device, the room temperature in laboratory is maintained at 25 DEG C or so, and humidity is maintained at less than 50%.
The specific preparation process of memory described in this example is as follows：
(1) polystyrene (PS) solution and C are prepared60Solution, solution concentration is respectively 3mg/ml and 1mg/ml, and solvent is not
Toluene through extra process；
(2) by the solution PS and C that are prepared in (1)60Using mol ratio as 2:1 ratio mixing and ultrasound 30min, supersonic frequency
For 100KHz；
(3) surface there is the silicon of the heavy doping of 300nm silica clear with acetone, ethanol, each ultrasound of deionized water successively
10min is washed, supersonic frequency is 100KHz, then dried up substrate surface liquid with high pure nitrogen to ensure that substrate surface is clean, it
It is put into 120 DEG C of baking oven and dries afterwards；
(4) substrate dried in step (3) is placed as handled 3min in UV ozone machine；
(5) in atmosphere, air humidity is 40%, and the substrate surface spin-coating step (1) handled well in step (4) is configured
Solution, spin coating rotating speed be slow-speed of revolution 2000r/min, spin-coating time 30s, plastics thickness control is in 16nm or so；Spin coating is good
Substrate be placed on drying and annealing 30min in 80 DEG C of baking oven, the film AFM photos of preparation are as shown in Figure 2；
(6) in the middle film surface vacuum evaporation organic semiconductor layer pentacene prepared of step (5), evaporation rate isVacuum degree control is 5 × 10-4Below pa, it is 50nm to control evaporated film thickness, prepares semiconductor layer AFM photos such as Fig. 3
It is shown；Mask plate is added in the film surface of preparation and carries out patterned process, and vacuum evaporation copper serves as source-drain electrode, evaporation rateThickness is controlled in 60~80nm；The channel width of mask plate is 2000 μm, and length is 100 μm.
After the completion of prepared by device, its electric property is characterized by Keithley4200 semiconductor analysis instrument, data processing
The transfer curve being depicted as is as shown in figure 4, mobility reaches 0.3cm2/ Vs, on-off ratio is up to 104。
Fig. 5 is device storage characteristics transfer curve, it can be seen that the write-in window of device is very big, and is only made
Use 5mW/cm2Visible ray and 2V voltages can wipe back initial position completely, embodying device has good low-power consumption, bloom
Response characteristic.
Also the surface memory has good repeatedly erasable ability to Fig. 6 write-in-reading-erasing-reading performance data,
After the erasable circulation of some cycles, the erasable window of device does not change substantially.
Shown in Fig. 7 is device data holding capacity, as can be seen from the figure after 10000s, and the storage of device is opened
Close ratio and remain in 104More than, illustrate that the memory reliability of device is high.
All test results show, the organic field effect tube memory device with loose structure involved in the present invention
Functional, good stability, data keep reliability high, and preparation process is simple to operate, with low cost, main processes
Complete in the solution, save the energy, and can mass produce.
Embodiment 2
In the technical scheme of the present embodiment, heavily doped silicon is used as substrate and gate electrode；One layer of 50nm silica conduct
Gate insulation layer；The polymer film layer of doped semiconductor nanocrystal particle is made up of polymers polystyrene, semi-conductor nano particles
By C60Prepare, thickness is 15nm after it adulterates；The thick pentacenes of one layer of 50nm are deposited with above gate insulation layer and serve as organic semiconductor
Layer；In conducting channel both sides, evaporation metal copper is used as source-drain electrode again.
When actually preparing device, the room temperature in laboratory is maintained at 25 DEG C or so, and humidity is maintained at less than 50%.
The specific preparation process of memory described in this example is as follows：
(1) polystyrene (PS) solution and C are prepared60Solution, solution concentration is respectively 3mg/ml and 2mg/ml, and solvent is not
Toluene through extra process；
(2) by the solution PS and C that are prepared in (1)60Using mol ratio as 2:1 ratio mixing and ultrasound 30min, supersonic frequency
For 100KHz；
(3) silicon that surface is had to the heavy doping of 50nm silica is respectively cleaned by ultrasonic with acetone, ethanol, deionized water successively
10min, supersonic frequency is 100KHz, then is dried up substrate surface liquid to ensure that substrate surface is clean, afterwards with high pure nitrogen
It is put into 120 DEG C of baking oven and dries；
(4) substrate dried in step (3) is placed as handled 3min in UV ozone machine；
(5) in atmosphere, air humidity is 40%, and the substrate surface spin-coating step (1) handled well in step (4) is configured
Solution, spin coating rotating speed be slow-speed of revolution 2000r/min, spin-coating time 30s, plastics thickness control is in 15nm or so；Spin coating is good
Substrate be placed on drying and annealing 30min in 80 DEG C of baking oven；
(6) in the middle film surface vacuum evaporation organic semiconductor layer pentacene prepared of step (5), evaporation rate isVacuum degree control is 5 × 10-4Below pa, it is 50nm to control evaporated film thickness；Mask is added in the film surface of preparation
Plate carries out patterned process, and vacuum evaporation copper serves as source-drain electrode, evaporation rateThickness is controlled in 60~80nm；Cover
The channel width of template is 2000 μm, and length is 100 μm.
Embodiment 3
In the technical scheme of the present embodiment, heavily doped silicon is used as substrate and gate electrode；One layer of 300nm silica conduct
Gate insulation layer；The polymer film layer of doped semiconductor nanocrystal particle is made up of polymer poly methyl methacrylate (PMMA),
Semi-conductor nano particles are by C60Prepare, thickness is 16nm after it adulterates；The thick pentacenes of one layer of 50nm are deposited with above gate insulation layer
Serve as organic semiconductor layer；In conducting channel both sides, evaporation metal copper is used as source-drain electrode again.
(1) polymethyl methacrylate (PMMA) solution and C are prepared60Solution, solution concentration is respectively 3mg/ml and 1mg/
Ml, solvent is the toluene without extra process；
(2) by the solution PS and C that are prepared in (1)60Using mol ratio as 2:1 ratio mixing and ultrasound 30min, supersonic frequency
For 100KHz；
(3) surface there is the silicon of the heavy doping of 300nm silica clear with acetone, ethanol, each ultrasound of deionized water successively
10min is washed, supersonic frequency is 100KHz, then dried up substrate surface liquid with high pure nitrogen to ensure that substrate surface is clean, it
It is put into 120 DEG C of baking oven and dries afterwards；
(4) substrate dried in step (3) is placed as handled 3min in UV ozone machine；
(5) in atmosphere, air humidity is 40%, and the substrate surface spin-coating step (1) handled well in step (4) is configured
Solution, spin coating rotating speed be slow-speed of revolution 2000r/min, spin-coating time 30s, plastics thickness control is in 16nm or so；Spin coating is good
Substrate be placed on drying and annealing 30min in 80 DEG C of baking oven；
(6) in the middle film surface vacuum evaporation organic semiconductor layer pentacene prepared of step (5), evaporation rate isVacuum degree control is 5 × 10-4Below pa, it is 50nm to control evaporated film thickness；Mask is added in the film surface of preparation
Plate carries out patterned process, and vacuum evaporation copper serves as source-drain electrode, evaporation rateThickness is controlled in 60~80nm；Cover
The channel width of template is 2000 μm, and length is 100 μm.
Embodiment 4
In the technical scheme of the present embodiment, heavily doped silicon is used as substrate and gate electrode；One layer of 300nm silica conduct
Gate insulation layer；The polymer film layer of doped semiconductor nanocrystal particle is made up of polymer poly methyl methacrylate (PMMA),
Semi-conductor nano particles are by C60Prepare, thickness is 20nm after it adulterates；The thick pentacenes of one layer of 30nm are deposited with above gate insulation layer
Serve as organic semiconductor layer；In conducting channel both sides, evaporation metal copper is used as source-drain electrode again.
(1) polymethyl methacrylate (PMMA) solution and C are prepared60Solution, solution concentration is respectively 5mg/ml and 1mg/
Ml, solvent is the toluene without extra process；
(2) by the solution PS and C that are prepared in (1)60Using mol ratio as 2:1 ratio mixing and ultrasound 30min, supersonic frequency
For 100KHz；
(3) surface there is the silicon of the heavy doping of 300nm silica clear with acetone, ethanol, each ultrasound of deionized water successively
10min is washed, supersonic frequency is 100KHz, then dried up substrate surface liquid with high pure nitrogen to ensure that substrate surface is clean, it
It is put into 120 DEG C of baking oven and dries afterwards；
(4) substrate dried in step (3) is placed as handled 5min in UV ozone machine；
(5) in atmosphere, air humidity is 40%, and the substrate surface spin-coating step (1) handled well in step (4) is configured
Solution, spin coating rotating speed be slow-speed of revolution 2000r/min, spin-coating time 30s, plastics thickness control is in 20nm or so；Spin coating is good
Substrate be placed on drying and annealing 30min in 80 DEG C of baking oven；
(6) in the middle film surface vacuum evaporation organic semiconductor layer pentacene prepared of step (5), evaporation rate isVacuum degree control is 5 × 10-4Below pa, it is 30nm to control evaporated film thickness；Mask is added in the film surface of preparation
Plate carries out patterned process, and vacuum evaporation copper serves as source-drain electrode, evaporation rateThickness is controlled in 80~100nm；Cover
The channel width of template is 2000 μm, and length is 100 μm.
Embodiment 5
In the technical scheme of the present embodiment, heavily doped silicon is used as substrate and gate electrode；One layer of 50~300nm silica
It is used as gate insulation layer；The polymer film layer of doped semiconductor nanocrystal particle is made up of polymer polyethylene base carbazole (PVK), and half
Conductor nano-particle is by C60Prepare, thickness is 15~20nm after it adulterates；One layer of 30~50nm thickness of evaporation above gate insulation layer
Pentacene serves as organic semiconductor layer；In conducting channel both sides, evaporation metal copper is used as source-drain electrode again.
(1) PVK (PVK) solution and C are prepared60Solution, solution concentration is respectively 3mg/ml and 1mg/ml, molten
Agent is the toluene without extra process；
(2) by the solution PS and C that are prepared in (1)60Using mol ratio as 2:1 ratio mixing and ultrasound 30min, supersonic frequency
For 100KHz；
(3) surface there is the silicon of the heavy doping of 300nm silica clear with acetone, ethanol, each ultrasound of deionized water successively
10min is washed, supersonic frequency is 100KHz, then dried up substrate surface liquid with high pure nitrogen to ensure that substrate surface is clean, it
It is put into 120 DEG C of baking oven and dries afterwards；
(4) substrate dried in step (3) is placed as handled 3min in UV ozone machine；
(5) in atmosphere, air humidity is 40%, and the substrate surface spin-coating step (1) handled well in step (4) is configured
Solution, spin coating rotating speed be slow-speed of revolution 2000r/min, spin-coating time 30s, plastics thickness control is in 16nm or so；Spin coating is good
Substrate be placed on drying and annealing 30min in 80 DEG C of baking oven；
(6) in the middle film surface vacuum evaporation organic semiconductor layer pentacene prepared of step (5), evaporation rate isVacuum degree control is 5 × 10-4Below pa, it is 50nm to control evaporated film thickness；Mask is added in the film surface of preparation
Plate carries out patterned process, and vacuum evaporation copper serves as source-drain electrode, evaporation rateThickness is controlled in 60~80nm；Cover
The channel width of template is 2000 μm, and length is 100 μm.
The thin polymer film of doped semiconductor nanocrystal particle is incorporated into organic field effect tube memory and worked as by the present invention
In, the problem of organic memory storage is not sufficiently stable effectively is solved by simple process meanses, for organic memory
Important in inhibiting is promoted in commercialization.
The concrete technical scheme being not limited to described in above-described embodiment of invention, the technical side of all use equivalent formation
Case is the protection domain of application claims.
Claims (10)
1. one kind is based on polymer-doped semi-conductor nano particles organic field effect tube memory, the organic effect is brilliant
Body pipe memory includes source-drain electrode, organic semiconductor, gate insulation layer, gate electrode successively from top to bottom, it is characterised in that：It is described
Polymer-doped semi-conductor nano particles are provided between the organic semiconductor and gate insulation layer of organic field effect tube memory
Film layer, the layer is used to capture electric charge as charge storage layer.
2. organic field effect tube memory according to claim 1, it is characterised in that：The organic field effect tube
Memory also includes substrate and is formed at the gate electrode of the substrate；The substrate is selected from highly doped silicon chip, sheet glass or modeling
Expect PET；The material that the gate electrode is used is selected from highly doped silicon, aluminium, copper, silver, gold, titanium or tantalum.
3. organic field effect tube memory according to claim 1 or 2, it is characterised in that：It is described polymer-doped
Polymer in semi-conductor nano particles film layer is selected from low-k polymer materials.
4. organic field effect tube memory according to claim 3, it is characterised in that：The low-k polymerization
Thing material is selected from one or more of mixtures in PVK, polystyrene or polymethyl-benzene e pioic acid methyl ester；It is described poly-
The thickness of compound doped semiconductor nanocrystal particle film layer is 15~20nm.
5. organic field effect tube memory according to claim 1 or 2, it is characterised in that：The doping is partly led
The material of body nano-particle is selected from C60。
6. organic field effect tube memory according to claim 1 or 2, it is characterised in that：The gate insulation layer is adopted
Material is selected from silica, aluminum oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, the gate insulation layer
Film thickness be 50~300nm；The material that the organic semiconductor layer is used is selected from pentacene, aphthacene, titan bronze, fluorination
Titan bronze, rubrene, anthracene or 3- hexyl thiophenes, the film thickness of the organic semiconductor layer is 30~50nm；The source
Drain electrode material is selected from metal or organic conductor material, and its thickness is 60~100nm.
7. organic field effect tube memory according to claim 6, it is characterised in that：The organic semiconductor layer is adopted
With thermal vacuum evaporation film-forming method film forming；The preparation method of the source-drain electrode is that magnetron sputtering method, ink-jet printing process or vacuum are steamed
Plating method；The source-drain electrode materials are copper or gold.
8. a kind of organic effect based on polymer-doped semi-conductor nano particles as described in claim any one of 1-7 is brilliant
The preparation method of body pipe memory, it is characterised in that comprise the following steps：
(1) advanced low-k materials polymer solution is prepared, low boiling point solvent is dissolved in, 3~5mg/ml of its concentration；
(2) semiconductor solution is prepared, low boiling point solvent is dissolved in, its concentration is 1~2mg/ml；
(3) solution for preparing above-mentioned (1) and (2) process is using mol ratio as 2:1 ratio mixing, and it is ultrasonic in Ultrasound Instrument
30min；
(4) as substrate, and on substrate, formation gate electrode and gate insulation layer obtain substrate, gate insulation layer to selection suitable material
The thickness of film is 50~300nm, cleans up and dried after substrate；
(5) the substrate UV ozone of clean drying is handled into 3~5min；
(6) solution in the substrate in step (5) in spin-coating step (3), thickness is 15~20nm, and the good sample of spin coating is existed
80 DEG C of dry 30min in baking oven；
(7) the sample surfaces vacuum evaporation organic semiconductor layer and source-drain electrode completed is prepared in step (6).
9. preparation method according to claim 8, it is characterised in that：Low boiling point solvent in step (1) is toluene；Step
(6) spin coating process in is carried out in nitrogen glove box.
10. preparation method according to claim 8, it is characterised in that：Step (7) the vacuum evaporation organic semiconductor material
Expect for pentacene, evaporation rate isVacuum degree control is 6 × 10-5Pa~6 × 10-4Pa, thickness is controlled 30 using crystal oscillator
~50nm；The source-drain electrode of step (7) described vacuum evaporation is copper or gold, evaporation rateControl thickness 60~
100nm。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009022773A1 (en) * | 2007-08-14 | 2009-02-19 | Industry-University Cooperation Foundation, Hanyang University | Fullerene-based flash memory device and method of fabricating the same |
| WO2012012691A2 (en) * | 2010-07-23 | 2012-01-26 | Cornell University | Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same |
| CN102723439A (en) * | 2011-03-29 | 2012-10-10 | 中国科学院微电子研究所 | Memory cell and memory based on organic field effect transistor and method for preparing memory cell |
| US20120319096A1 (en) * | 2010-03-04 | 2012-12-20 | Andrew Gabriel Rinzler | Semiconductor devices including an electrically percolating source layer and methods of fabricating the same |
-
2017
- 2017-03-07 CN CN201710129601.6A patent/CN106953010A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009022773A1 (en) * | 2007-08-14 | 2009-02-19 | Industry-University Cooperation Foundation, Hanyang University | Fullerene-based flash memory device and method of fabricating the same |
| US20120319096A1 (en) * | 2010-03-04 | 2012-12-20 | Andrew Gabriel Rinzler | Semiconductor devices including an electrically percolating source layer and methods of fabricating the same |
| WO2012012691A2 (en) * | 2010-07-23 | 2012-01-26 | Cornell University | Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same |
| CN102723439A (en) * | 2011-03-29 | 2012-10-10 | 中国科学院微电子研究所 | Memory cell and memory based on organic field effect transistor and method for preparing memory cell |
Non-Patent Citations (2)
| Title |
|---|
| CHIEN-CHUNG SHIH, ET AL.: "《High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites》", 《SCIENTIFIC REPORTS》 * |
| KANG-JUN BAEG, ET AL.: "《Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C61 Butyric Acid Methyl Ester Composite Films 》", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 * |
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